EP3223993A2 - Séparation de corps solide au moyen de la transformation de matière - Google Patents

Séparation de corps solide au moyen de la transformation de matière

Info

Publication number
EP3223993A2
EP3223993A2 EP15801449.8A EP15801449A EP3223993A2 EP 3223993 A2 EP3223993 A2 EP 3223993A2 EP 15801449 A EP15801449 A EP 15801449A EP 3223993 A2 EP3223993 A2 EP 3223993A2
Authority
EP
European Patent Office
Prior art keywords
solid
modifications
less
laser
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP15801449.8A
Other languages
German (de)
English (en)
Inventor
Jan Richter
Christian Beyer
Ralf Rieske
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE102014018841.8A external-priority patent/DE102014018841A1/de
Priority claimed from DE102014018720.9A external-priority patent/DE102014018720A1/de
Priority claimed from DE102015000449.2A external-priority patent/DE102015000449A1/de
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Priority to EP18178276.4A priority Critical patent/EP3399542B1/fr
Priority to EP22195120.5A priority patent/EP4122633A1/fr
Priority to EP20151833.9A priority patent/EP3666445B1/fr
Priority to EP18175761.8A priority patent/EP3395489B1/fr
Publication of EP3223993A2 publication Critical patent/EP3223993A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/0869—Devices involving movement of the laser head in at least one axial direction
    • B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting

Definitions

  • the present invention relates according to claim 1 to a method for generating a separation region in a solid for detaching a solid portion of the solid and according to claim 13 to a method for separating at least a solid content of a solid.
  • document WO 2013/126927 A2 discloses a method for separating device layers from an original wafer.
  • a very strong heating of the overall arrangement takes place as a result of laser application. This heating is required in order to achieve stresses in the interior of the solid via the different coefficients of thermal expansion of the solid material and a "handler.” It can be seen here that the thermal resistance of the "handler” must be very high, since very high temperatures occur.
  • the laser beams are always introduced into the solid via a surface which is not part of the layer to be separated. This also leads to a strong heating of the solid.
  • the high temperatures also have the disadvantage that the solid warps or unintentionally expands, whereby the generation of crystal lattice modifications is possible only very imprecise.
  • the above object is achieved by a method for generating a separation region in a solid body for detaching a solid portion, in particular a solid layer of the solid, wherein the solid fraction to be detached is thinner than the solid fraction reduced by the solids content.
  • this process preferably comprises at least the steps of: providing a solid to be processed, wherein the solid preferably consists of a chemical compound; Providing a LASER light source; Subjecting the solid to LAS ER radiation from the LASER light source, the laser beams penetrating the solid over a surface of the solid portion to be separated, the LASER radiation impinging on a predetermined portion of the solid inside the solid to form a release region or multiple part release regions ,
  • the temperature generated in the predetermined proportion of the solid body is so high that the material forming the predetermined portion undergoes modifications in the form of a predetermined material conversion, the modification setting providing the detachment region or predetermining a plurality of partial release regions.
  • This solution is advantageous because a conversion or phase transformation can preferably be effected without a local destruction of the crystal lattice, whereby a weakening or strength reduction in the solid can be produced in a very controlled manner.
  • the present invention provides for the first time a possibility that a solid body does not have to be shortened orthogonal to its longitudinal direction to be shortened, but that it is acted upon with the LASER in its longitudinal direction such that a solid layer is separated.
  • This method also has the advantage that the LASER rays do not have to penetrate into the solid body over the entire radius of the solid, but rather can be introduced into the solid via a layer which is preferably parallel to the separation layer or release layer. This is particularly useful for solids whose radius is greater than or equal to the thickness of the solid layer to be separated.
  • the material conversion is in accordance with a further preferred embodiment of the present invention, a decomposition of the chemical compound in several or in all individual components or elements.
  • This embodiment is advantageous because the targeted decomposition of the chemical compound of the solid for a separation of the Solid content of the most suitable combination of materials can be defined defined.
  • a solid-state starting material is preferably understood to be a monocrystalline, polycrystalline or amorphous material. Monocrystallines having a strongly anisotropic structure are preferred because of the strong anisotropic atomic binding forces.
  • the solid-state starting material preferably has a material or a combination of materials from one of the main groups 3, 4, 5 and / or subgroup 12 of the Periodic Table of the Elements, in particular a combination of elements of the 3rd, 4th, 5th main group and the subgroup 12th , such as Zinc oxide or cadmium telluride, on.
  • the semiconductor starting material may include, for example, silicon, gallium arsenide GaAs, gallium nitride GaN, silicon carbide SiC, indium phosphide InP, zinc oxide ZnO, aluminum nitride AIN, germanium, gallium (III) oxide Ga203, alumina AI203 (sapphire), gallium phosphide GaP, indium arsenide InAs, indium nitride InN, aluminum arsenide AlAs or diamond.
  • the solid or the workpiece preferably comprises a material or a combination of materials from one of the main groups 3, 4 and 5 of the Periodic Table of the Elements, such as SiC, Si, SiGe, Ge, GaAs, InP, GaN, Al 2 O 3 ( Sapphire), AIN. Particularly preferably, the solid has a combination of the fourth, third and fifth group of the periodic table occurring elements.
  • Conceivable materials or combinations of materials are eg gallium arsenide, silicon, silicon carbide, etc.
  • the solid may have a ceramic (eg Al 2 O 3 - alumina) or consist of a ceramic, preferred ceramics are eg Perovskitkeramiken (such as Pb-, O-, Ti / Zr-containing ceramics) in general and lead magnesium niobates, barium titanate, lithium titanate, yttrium aluminum garnet, in particular yttrium aluminum garnet crystals for solid-state laser applications, surface acoustic wave (SAW) ceramics such as lithium niobate, gallium orthophosphate, Quartz, calcium titanate, etc. in particular.
  • the solid body thus preferably has a semiconductor material or a ceramic material or particularly preferably the solid body consists of at least one semiconductor material or a ceramic material.
  • the solid is preferably an ingot or a wafer.
  • the solid is particularly preferably a material which is at least partially transparent for laser beams. It is therefore still conceivable that the solid body has a transparent material or partially made of a transparent material, such as sapphire, or is made.
  • the solid is a photomask, wherein as photomask material in the present case preferably each known to the filing date photomask material and more preferably combinations thereof
  • the solid may additionally or alternatively comprise or consist of silicon carbide (SiC)
  • SiC silicon carbide
  • the solid is preferably an ingot which in an initial state, ie in a state before the first solid fraction is separated, is preferably more than 5 kg or more than 10 kg or more than 15 kg or more than 20 kg or more than 25 kg or more than 30 kg or more than 35 kg or more than 50 kg
  • the solids content is preferably a solid layer, in particular a wafer with at least 300 mm diameter.
  • the crystal lattice at least predominantly breaks in a portion spaced from the center of the respective modification. This solution is particularly advantageous since it reduces the need for post-processing of the part of the solid which, after separation, remains less in volume from the modification (s).
  • the modifications are conditioned, wherein the crystal lattice is introduced only by the conditioning in the regions surrounding the modifications at least in the respective one portion.
  • Subcritical here means that the crack propagation comes to a standstill or stops before the crack divides the solid into at least two parts.
  • a subcritical crack preferably spreads less than 5 mm, in particular less than 1 mm, in the solid body.
  • the modifications are preferably produced in such a way that, for example, when separating planar solid plates, the subcritical cracks preferably propagate in the same plane, in particular in a plane parallel to or defined to the surface of the solid through which the laser rays penetrate into the solid.
  • the modifications are preferably produced in such a way that, for example, when separating uneven solids, the subcritical cracks are preferably defined, for example spread in a spherical layer, such that the release region acquires a defined, in particular spherical, shape.
  • the LASER radiation with a pulse density between 100nJ / pm 2 and 10000 nJ / pm 2 is preferably between 200nJ / pm 2 and 2000 nJ / pm 2 and more preferably between 500nJ / pm 2 for defined temperature control and 1000 nJ / pm 2 introduced into the solid.
  • the receiving layer comprises or consists of a polymer material, wherein the polymer is preferably polydimethylsiloxane (PDMS) or an elastomer or an epoxy resin or a combination thereof.
  • PDMS polydimethylsiloxane
  • the energy of the laser beam of the laser is selected such that the solid-state or crystal transformation in at least one direction is less than or greater than 30 times, or 20 times or 10 times or 5 times or 3 times the reyle length.
  • the wavelength of the laser beam of the laser is chosen according to a further preferred embodiment of the present invention such that the linear absorption of the solid or of the material is less than 10 cm “1 and preferably less than 1 cm " 1 and more preferably less than 0, 1 cm "1 is.
  • the crystal lattice at least predominantly enters a portion spaced from the center Z of the respective modification.
  • the crack passes at least in sections through the plurality, in particular the entirety, of the modifications or extends at least to the majority, in particular to the entirety, of the modifications.
  • a first number of modifications is produced according to a further preferred embodiment of the present invention with its center Z on the one hand of the detachment area and a second number of modifications is generated with its center on the other hand the detachment area.
  • the solid is connected to a cooling device via a solid-state surface, wherein the solid-state surface which is connected to the cooling device is formed parallel or substantially parallel to the surface through which the laser rays penetrate into the solid, the cooling device being dependent on the Laserbeaufschlagung, especially as a function of the resulting by the laser exposure temperature of the solid is operated.
  • the surface over which the solid body is connected to the cooling device is operated exactly opposite to the surface through which the laser beams penetrate into the solid.
  • the cooling device is operated such that the heat introduced by the laser beams into the solid heat input is removed by the cooling device from the solid. This is advantageous since it can significantly reduce the occurrence of thermally induced stresses or deformations.
  • the cooling device has according to a further preferred embodiment of the present invention, at least one sensor device for detecting the temperature of the solid and causes depending on a predetermined temperature profile, a cooling of the solid.
  • This embodiment is advantageous because a temperature change of the solid body can be detected very precisely by the sensor device.
  • the change in temperature is used as a data input for driving the cooling device.
  • the cooling device is coupled to a rotation device and the cooling device is rotated with the solid arranged thereon during the modification generation by means of the rotation device, in particular at more than 100 revolutions per minute or at more than 200 revolutions per minute or with more than 500 revolutions.
  • Modification lines is generated, wherein the individual modifications per line preferably less than 10 pm, in particular less than 5 pm or less than 3 pm or less than 1 pm or less than 0.5 pm, are generated spaced from each other and the individual
  • This embodiment is advantageous because the local generation of modification blocks such large mechanical stresses can be generated in the solid that either a local tearing of the solid can take place or due to another triggering event, such as the thermal loading of a receiving layer arranged on the solid, a crack is generated in the solid. It has been recognized that the modification blocks cause a crack to be stably guided even in a region between two modification blocks. Thanks to the modification blocks, a controlled and very precise crack propagation with fewer modifications can be effected. This has considerable advantages, since the processing time is shortened, the energy consumption is reduced and the heating of the solid is reduced.
  • the modifications in the first block are generated in pulse intervals between 0.01 pm and 10 pm and / or line distances between 0.01 pm and 20 pm are provided and / or a pulse repetition frequency between 16 kHz and 20 MHz is provided.
  • optics by means of which the laser beams are directed from a laser beam source to the solid, is adapted, causing at least a change in the numerical aperture, wherein the numerical aperture at a location in the edge region of the solid is smaller than at another location of Festgropers, which is closer to the center of the solid.
  • This embodiment is advantageous because modifications with different properties are generated.
  • an optic is preferably used which has a numerical aperture between 0.05 and 0.3 , in particular substantially or exactly 0, 1.
  • the thermal application of the receiving layer comprises a cooling of the receiving layer to a temperature below 20 ° C, in particular below 10 ° C or below 0 ° C or below - 10 ° C or below 100 ° C or on or below the glass transition temperature of the material of the receiving layer.
  • the pulse intervals between 0.01 pm and 10 pm, in particular with 0.2 pm are provided and / or line spacing between 0.01 .mu.m and 20 .mu.m, in particular with 3 pm, and / or a pulse repetition frequency between 16 kHz and 20 MHz, in particular with 128 kHz, is provided and / or a pulse energy between 100 nJ and 2000 nJ, in particular with 400 nJ, is provided.
  • a picosecond or femtosecond laser is used for the method according to the invention, in particular when applying silicon carbide, wherein the laser preferably has a wavelength between 800 nm and 1200 nm, in particular 1030 nm or 1060 nm.
  • the pulse duration is preferably between 100 fs and 1000 fs, in particular at 300 fs.
  • an objective for focusing the laser beam is preferably used, wherein the objective preferably causes a 20-100-fold reduction, in particular a 50-fold reduction or focussing, of the LASER beam.
  • the optical system for focusing the laser beam preferably has a numerical aperture of 0, 1 to 0.9, in particular of 0.65.
  • any material conversion effected by the LASER radiation represents a modification of the material of the solid, wherein the modifications may additionally or alternatively be understood eg as destruction of the crystal lattice of the solid.
  • the solid body is moved relative to the LASER light source, in particular moved, in particular rotated.
  • the movement, in particular rotation, of the solid takes place continuously with respect to the LASER light source.
  • the occurring rotational speeds preferably exceed 1 revolution per second or 5 revolutions per second or 10 revolutions per second or a linear velocity of at least 100 mm / s.
  • the solid body is preferably arranged on a rotary table or rotary shoe, in particular adhesively bonded.
  • each rotation is preferably below a predetermined maximum number, wherein the maximum number of modifications per cm 2 and per rotation preferably depending on the Solid state material and / or the Energy density of the LASER radiation and / or determined as a function of the duration of the LASER radiation pulses.
  • a control device is provided which, depending on at least two or three or all of the aforementioned parameters and preferably further parameters, determines the maximum number of modifications to be produced per cm 2 per rotation on the basis of predetermined data and / or functions. This is particularly advantageous since it has been recognized that deleterious vertical cracks occur when the damage density is too high, resulting from stresses arising between the machined areas and the areas not yet worked.
  • the modifications are produced with different patterns, in particular distances between the individual newly generated modifications and / or with altered energy input, in particular reduced energy input.
  • either the laser or the wafer or solid can be displaced in the XY direction, the modifications being produced as a function of the translational XY displacement.
  • an XY table is used on which the solid is arranged during operation of the laser.
  • the optics by means of which the laser beams are deflected, continuously or stepwise, in particular in response to a movement of the solid, in particular a rotation of the solid, readjusted or readjusted by the aforementioned control device or an alternative control device.
  • a first LASER beam path set with respect to the first LASER beam path set before the readjustment or readjustment preferably takes place after adjustment of a second LASER beam path, which is different from the first LASER beam path.
  • different laser beam paths are preferably set by the control device.
  • the LASER scanning direction is particularly preferably respectively readjusted or readjusted or changed.
  • control device additionally or alternatively controls the LASER light source, the optics, in particular the scanner, and / or the device moving the solid, in particular the rotary table or rotary shutter, so that the energy input per rotation remains the same or decreases the energy input into the solid preferably continuously, ie with each rotation, decreases or gradually, ie in each case after several rotations, decreases.
  • the number of rotations per stage may be different, so a first stage, for example, more than 2 rotations and a other stage include more or fewer rotations than the first stage.
  • the steps each comprise the same number of rotations.
  • the step process may also be mixed or combined with the continuous process.
  • the laser beam can apply a line several times with modifications, so that in a line or a total modification is produced.
  • the lines may intersect when the laser is subjected to modifications, the first line of the modifications being exposed, in particular, at a predetermined angle of, for example, 90 °, 45 °, 30 °, 60 ° or in another can cut selectable angle.
  • the angles of intersection between lines of the laser application to produce modifications may be based on the crystal orientation of the material of the solid, in order to increase the effectiveness of the applied modifications.
  • the LASER light source is designed as a scanner and the generation of the modifications takes place as a function of the laser scanning direction, the laser polarization direction and the crystal orientation.
  • the already mentioned control device or an alternative control device which depending on at least two or three of the aforementioned parameters and preferably further parameters, based on predetermined data and / or functions required for modification generation facilities, in particular the LASER light source, the optics, in particular the scanner, and the device moving the solid, in particular the rotary table or rotary shoe, controlled.
  • the distance between the centers of two modifications generated in succession in the modification generation direction or in the circumferential direction of the solid is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm.
  • the outer boundaries of modifications produced in succession in the modification generation direction or in the circumferential direction of the solid are less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm, spaced from each other.
  • the present invention may further relate to a method of generating a release region in a solid for detaching a solid portion from the solid, comprising at least the following steps:
  • the solid is rotated relative to the LASER light source and the number of modifications per cm 2 of the solid surface per rotation through which the LASER radiation penetrates into the solid to produce the modifications is below a predetermined maximum number, with the maximum number of modifications per cm 2 and per rotation preferably determined as a function of the solid state material and the energy density of the LASER radiation and / or in successive rotations of the solid relative to the LASER light source, the modifications with different patterns, in particular distances between the individual newly generated modifications, and / or be generated with changed energy input, in particular reduced energy input, and / or the LASER light source is designed as a scanner and the generation of the modifications in dependence on the laser scanning direction, the laser polarization direction and the crystal orientation, and / or the distance between the centers of two modifications produced in succession in the modification generation direction or in the circumferential direction of the solid is less than 10000 nm, in particular less than 1000 nm, in particular less than 100 nm,
  • the maximum possible number determined in a traversing cycle in particular a rotation of the solid body relative to the optics, in particular one
  • the laser beam can be subdivided by a diffractive optical element into a plurality of laser beams, thus simultaneously a corresponding number of modifications according to the division of the
  • the plurality of rows comprises at least two and preferably at least 10 and more preferably up to 50 or up to 100 or up to 200 lines.
  • the generated pattern is conceivable that at a certain
  • Number of lines in a first traversing cycle e.g. only every xth line or every xth and yth line or every xth and every xth minus z line is modified. Specifically, for example, every 5th line could be modified. Alternatively, every 5th and 7th row could be modified. Alternatively, e.g. every 5th and every 5th minus 2 would be modified, which would then cause the 3rd, 5th, 8th, 10th, 13th, 15th etc. lines to be modified. Moreover, it is possible that the modifications are generated in blocks, that is, for example, a block of 50 consecutive lines contains a modification and the subsequent 50 lines contain no modifications, and after this block of 50 lines without modification again a block followed by 50 lines with modification.
  • the width of such alternating blocks may vary according to the distance from the edge of the sample, that is, for example, in the region of the edge, the blocks have a smaller diameter
  • Modifications of a line are generated according to a pattern. Preference is given to
  • Rotation e.g. only at every a-th point (at which a modification is provided) is generated or generated at every a-th and b-th digit or at each a-th and every a-th minus c digit.
  • Traversing cycle which preferably occurs after the end of the first traversing cycle, in particular after a first rotation, are preferably described alternative locations, which are preferably spaced from each other.
  • other line numbers can then be provided for the variables a, b, c.
  • the lines are processed at least in dependence on a position or travel position, in particular a rotational position, and the Determine the number of rotations and / or the positions in a row that are being processed (or at which modifications are generated), at least as a function of the travel position or travel position, in particular a rotational position, and determine the number of rotations.
  • each material conversion effected by the LASER radiation represents a modification of the material of the solid, wherein the solid is moved in the XY direction in relation to the LASER light source and the number of modifications per cm 2 of the solid surface through which the LASER radiation for generating the modifications penetrates into the solid, wherein the maximum number of modifications per cm 2 and according to the translational movement in the XY direction preferably determined as a function of the solid state material and the energy density of the LASER radiation and / or according to the translational Movement in the XY direction of the solid relative to the LASER light source, the modifications with different patterns, in particular distances between the individual newly generated modifications, and / or with changed energy input, in particular reduced energy input, generated, and / or the LASER light source is designed as a scanner and the generation of the modifications as a function of the laser scanning direction, the laser polarization direction and the crystal orientation takes place, and / or the distance between the shifts of two successively generated in Modtechnischmaschineserzeugungsraum modifications
  • the LASER radiation in the solid state produces modifications, in particular crystal lattice defects, wherein the solid is translationally moved relative to the LASER light source and the number of modifications per cm 2 of the solid surface through which the LASER radiation generates the modifications penetrates into the solid, wherein the maximum number of modifications per cm 2 and according to the translational movement in the XY direction preferably determined depending on the solid state material and the energy density of the LASER radiation and / or according to the translational movement in the XY direction of the solid the LASER light source, the modifications with different patterns, in particular distances between the individual newly created modifications, and / or with changed input of energy, in particular reduced energy input, and / or the LASER light source is designed as a scanner and the generation of the modifications is effected as a function of the laser scanning direction, the laser polarization direction and the crystal orientation, and / or the distance between the displacements of two successively Modifications produced in the modification generation direction is less than 10000 nm, in particular less than 1000 n
  • the control unit controls the generation of the modifications, for example as a function of the number of travel cycles and / or the local heat generation, which is preferably detected optically and / or by sensors, and / or the material properties, in particular the density and / or strength and / or the thermal conductivity of the solid.
  • the invention further relates to a method for separating at least one solids content from a solid, in particular a wafer, at least comprising the steps of: arranging a receiving layer on a solid treated according to a method according to any one of claims 1 to 5, thermally applying the receiving layer to , in particular mechanical, generating crack propagation stresses in the solid, wherein the crack propagation stresses propagate a crack in the solid along the stripping region.
  • the stated object is preferably also achieved according to the invention by the method mentioned below.
  • the method according to the invention for separating at least one solids content from a solid, in particular a wafer comprises at least the steps of modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, in particular a picosecond or femtosecond laser, with several modifications the crystal lattice is generated, the crystal lattice entering at least in each case as a result of the modifications in the regions surrounding the modifications, wherein a tear-off region is predetermined by the cracks in the region of the modifications, arranging a receiving layer on the solid for holding the solid fraction, thermally stressing the recording layer to, in particular, mechanically, generate stresses in the solid, wherein the stresses cause a main crack in the solid along the separation region, the main crack initiating the solid part preferably separated from the solid.
  • a modifying agent in particular a laser, in particular a picosecond or femtosecond laser
  • the present invention is achieved by a method for separating at least one solids content from a solid, in particular a wafer.
  • the method comprises at least the steps of: modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, in particular a picosecond or femtosecond laser, whereby several modifications are produced in the crystal lattice, wherein in the crystal lattice by the modifications in at least one a tear region separating the solid body is guided by the crack-guiding stresses, in particular displaced to the center of the respective modifications, a tear-off region being predetermined by the crack-guiding stresses in the solid-state region of the modifications, arranging a receiving layer on the solid body Holding the solid portion, thermally exposing the receiving layer to, in particular mechanical, generating crack propagation stresses in the solid, the crack propagation stress a crack in the solid propagates along the separation area.
  • a modifying agent in particular a laser, in particular a picosecond or femtosecond laser
  • Fig. 1 is a schematic representation of the laser-based invention
  • Fig. 2 is a schematic representation of a preferred separation process for
  • FIGS. 5a-5c show three schematic cross-sectional views, each showing modification blocks in a solid state
  • FIGS. 5d-5e show two diagrammatic representations, in each case, of divided solids along the separation regions, wherein the illustration according to FIG. 5d shows no modification residues and the representation according to FIG. 5e shows modification residues;
  • Fig. 7a-c three schematic representation of exemplary crack curves
  • 10a is a schematic representation of the state of the
  • Fig. 10c is a schematic representation of the residual solids disposed on a
  • Cooling device wherein the cooling device is arranged on a traversing device, in particular a rotary table;
  • Fig. 10d is a schematic representation of the generation of modifications in
  • Fig. 1 1 is a schematic representation of a cooling device, in particular a
  • Fig. 12 is a schematic representation of a preferred optics used
  • Fig. 13 is a schematic representation of superimposed beams or beam portions in the generation of a modification in the solid state
  • FIGS. 14a-14c are micrographs of crystal lattice modifications
  • FIGS. 15a-15b further micrographs of crystal lattice modifications
  • Transfer area 19a-19d further schematic representation of modifications and the separation region;
  • Fig. 20 is a schematic representation of different
  • Fig. 21 is a microscopic view of a top view of the generated
  • Fig. 22a-22b representations of the surface structures of the separated by the crack solids fractions
  • Fig. 23 is a further schematic representation of a modified by means of modifications solid.
  • the reference numeral 1 denotes in Fig. 1, the solid state.
  • Modifications 9 are produced in the solid body 1 according to the invention in order to form a separation region 2, on or along which the solid 1 is separated into at least two constituents.
  • the modifications 9 are substance conversions or phase transformations of the solid-state material, by means of which the detachment region 2 is created.
  • the modifications 9 are generated by at least one laser beam 4.
  • the laser beam 4 penetrates via a preferably treated, in particular polished, surface 5 into the preferably at least partially transparent solid 1.
  • On the surface 5 of the at least one laser beam is preferably broken, which is characterized by the reference numeral 6.
  • the at least one laser beam then forms a focus 8 for generating the modification.
  • the polished surface 5 may also be referred to as main surface 18.
  • Fig. 2 also shows the treated solid body 1, wherein on at least one surface of the solid body 1, in particular the surface 5 partially or completely covering or overlaying, a receiving layer 140 arranged to introduce voltages into the solid 1, in particular attached or produced is.
  • a receiving layer 140 After cleavage of the solid state layer or the solids content of the solid state 1, the receiving layer 140 initially remains at the split-off solids content and therefore serves to receive it.
  • the receiving layer 140 preferably consists of a polymer material or comprises a polymer material, in particular PDMS.
  • tempering, in particular cooling, of the receiving layer 140 the receiving layer 140 contracts and thereby induces stresses in the solid body 1, through which a crack triggered and / or generated for separating the solids content of the solid body 1 and / or out.
  • the LASER impingement of the solid 1 represents particularly preferably a local temperature of the solid 1, in particular in the interior of the solid 1, as a result of tempering, the chemical bond of the solid material changes, causing a change, in particular reduction, the strength or stability of the Solid 1 results in the applied proportion.
  • the LASER application is preferably carried out in an entire solid state 1 penetrating plane, which is also conceivable that at least or at most 30% or 50% or 60% or 70% or 80% or 90% of the solids 1 penetrating level the modification of the invention Experienced.
  • the reference numeral 10 denotes a first solid portion after the separation of the solid 1 and the reference numeral 12 denotes the second solid portion after the separation of the solid 1.
  • the reference numeral 1 1 further indicates the surfaces along which the two solid portions 10, 12 have been separated.
  • FIG. 3 shows a surface 1 1 of a first solid part 10 and a second solid part 12, wherein the first solid part 10 and the second solid part 12 along the surfaces 1 1 were separated from each other. Furthermore, FIG. 3 shows an untreated area 51 or untreated portion of the solid 1 and a treated area 52 or treated portion of the solid 1. The treated portion 52 is formed by the LASER impingement according to the invention and shows that the material of the solid 1 in this area has changed or has been converted.
  • FIG. 4 shows a Raman spectrum (reference symbol 53) 6H-SiC with conditioning 1 B after the separation of the solid fraction 12.
  • the reference symbol 54 denotes the intensity in% and the reference symbol 56 denotes the wave number in cm -1
  • Graphs for the untreated material portion denoted by reference numeral 51 in Fig. 3 and reference numeral 62 indicate the graph for the treated material portion indicated by reference numeral 52 in Fig. 3. It can be seen from the Raman spectrum 53 that the numerals indicated by 51 and 52 marked material shares have different material properties, in particular different substances.
  • the LASER application effects a substance-specific spatially resolved accumulation of the energy input, from which results a defined temperature control of the solid 1 at a defined location or at defined locations as well as within a defined time.
  • the solid state 1 may consist of silicon carbide, whereby preferably a strongly localized tempering of the solid 1 to a temperature of eg more than 2830 +/- 40 ° C is made. This tempering results in new substances or phases, in particular crystalline and / or amorphous phases, the resulting phases preferably being silicon (silicon) and DLC (diamond-like carbon) phases which are produced with significantly reduced strength.
  • the detachment region 2 then results from this strength-reduced layer.
  • the laser regulation is preferably carried out by spatially resolved sample temperature measurement in order to avoid edge effects during solid-state or wafer processing.
  • FIG. 5 a shows that in at least two different regions of the solid 1, the number of modifications produced per cm 2 is different.
  • a first block 91 is produced on modification lines, the individual modifications 9 per line preferably being less than 10 ⁇ m, in particular less than 5 ⁇ m or less than 3 ⁇ m or less than 1 ⁇ m or less than 0.5 ⁇ m, be created spaced apart.
  • the individual lines of the first modification block 91 are preferably produced less than 20 ⁇ m, in particular less than 15 ⁇ m or less than 10 ⁇ m or less than 5 ⁇ m or less than 1 ⁇ m, spaced apart from one another.
  • a second block 92 is produced on modification lines, the individual modifications 9 per line preferably being less than 10 ⁇ m, in particular less than 5 ⁇ m or less than 3 ⁇ m or less than 1 ⁇ m or less than 0.5 ⁇ m, be created spaced apart.
  • the individual lines of the second block 92 are preferably produced less than 20 pm, in particular less than 15 pm or less than 10 pm or less than 5 pm or less than 1 pm, spaced apart from each other.
  • the first region and the second region are spaced apart by a third region, wherein in the third region no or substantially no modifications 9 are generated by means of laser beams and the first region to the second region by more than 20 pm, in particular more than 50 pm or more than 100 pm or more than 150 pm or more than 200 pm.
  • the modifications 9 are preferably introduced into the solid body 1 via a surface 5 of the later solid body layer 12.
  • the distance between the surface 5, over which the laser beams are introduced, to the modifications 9 is preferred less than the distance from the modifications 9 to a surface 5 spaced and preferably aligned parallel further surface 7 of the solid 1.
  • the separation region 2 in particular in the solid-body longitudinal direction, lies below or above all modifications 9 and is preferably spaced apart from the modifications 9.
  • Fig. 5b shows a similar basic structure. According to FIG. 5 b, however, the separation region 2 extends through the modifications 9.
  • FIG. 5 c shows that the separation region 2 can also pass through the center of the modifications 9.
  • the course of the separation region 2 is in this case e.g. on the number of modifications 9 and / or the size of the modifications 9 and / or the distance of the individual modifications 9 of a block 91, 92 adjustable.
  • 5d shows the residual solid 1 after separation of the solid body layer 12 along the separation region 2 shown in FIG. 5a. Since in this case the modifications 9 are completely removed from the residual solid 1, the residual solid 1 does not show any residues of these modifications 9.
  • FIG. 5e shows remainders of the modifications 9.
  • modification blocks 91, 92 are preferably spaced apart by fields 901, 902, 903 without modifications or with fewer modifications per cm 2.
  • the fields without modifications 9 or with fewer modifications 9 may in this case preferably be smaller or larger than the areas in which the modification blocks 91, 92 are produced.
  • Figures 6a-6c show another embodiment of the present invention.
  • the modification blocks 91, 92 serve to generate local material weaknesses or local solid state tears or local voltage increases.
  • the reference numeral 25 denotes a first Generalablinate Scheme or crack portion in which the local material weakenings or local Solid cracking or local voltage increases occur
  • reference numeral 27 designates a second part release area or crack portion in which the local material weakenings or local solid state tears or local voltage increases also occur.
  • the individual partial release regions or portions of cracks preferably form ends 71, 72, via which the respective partial release region or crack component can be increased.
  • the enlargement of the partial release regions or crack portions preferably takes place as a result of an introduction of force caused by means of the receiving layer 140 (see FIG.
  • FIGS. 7a to 7c show embodiments according to which the course of the detachment region 2 as a result of the generation of the modification blocks 91, 92, 93 is controlled such that predetermined patterns or changes in thickness are produced or compensated.
  • the course of the separation region 2 is in this case e.g. on the number of modifications 9 and / or the size of the modifications and / or the distance of the individual modifications 9 of a block 91, 92, 93 adjustable.
  • the separation region 2 is formed by the following components: crack 31 between the outer edge and the first modification block 91, followed by the first crack portion 25, which is produced directly by the first block 91 of Modifications 9, followed by crack 32nd between the two Modtechnischsblöcken 91 and 92, followed by the second crack portion 27 connects, which is generated directly by the second block 92 of Modifications 9, followed by the crack 33 connects between the modification block 92 and the other outer edge of the solid 1. It is thus apparent that the separation region 2 can be predetermined such that a crack for separating the solid state layer 12 from the solid body 1 can run in sections at different levels.
  • the detachment region 2 can be selected such that the crack progression contains a plurality of geometrical inflection points.
  • FIG. 7c shows purely by way of example a further possible embodiment of the detachment region 2.
  • FIGS. 7a-7c show a multiple processing of a solid 1, in particular an ingot, wherein the solid 1 is thinned in each case by a solids content 12, in particular a solid state layer 12.
  • any recording layers 140 to be attached are not shown.
  • a receiving layer 140 for receiving the solid-state part 12 and for triggering and / or supporting a crack can likewise be arranged on the surface 5, 502, 504.
  • FIGS. 8a-8c thus show the application of LASER radiation of the LASER light source to the solid body 1, wherein the laser beams penetrate into the solid body 1 via a surface 5, 502, 504 of the solid state layer 12 to be separated.
  • LASER radiation a predetermined proportion of the solid 1 is defined in the interior of the solid 1 to form a separation region 2 or more Generalablinate Schemee tempered, the temperature generated in the predetermined proportion of the solid 1 is preferably so high that the forming the predetermined proportion Material modification 9 undergoes a predetermined material conversion.
  • the number and arrangement of the modifications 9 is adjustable and is preferably predetermined.
  • the residual solids 1 are re-charged with LASER radiation from the LASER light source, the LASER radiation tempering a predetermined proportion of the residual solids 1 inside the residual solids 1 to form a separation region 2, and the temperatures defined in FIG the predetermined proportion of the residual solids 1 temperature is again so high that the predetermined proportion forming material undergoes a predetermined material conversion.
  • the predetermined proportion forming material undergoes a predetermined material conversion.
  • the solid body 1 has a length such that a plurality, in particular more than 2 or more than 5 or more than 10 or more than 20 or more than 50 or more than 100 or more than 150 or more than 200 solid layers 12 with a Thickness less than 1000 pm, in particular less than 800 pm or less than 500 pm or less than 300 pm or less than 200 pm or less than 150 pm or less than 1 10 pm or less than 75 pm or less than 50 pm, of which are separable.
  • a machining of the newly exposed surface 502, 504 of the residual solids 1 takes place.
  • FIGS. 9a-9f show schematic representations of different process situations, such as may occur according to the method according to the invention for producing solid-state layers 12.
  • Fig. 9a shows the provision of the solid 1, in particular an ingot.
  • the solid body 1 provided is arranged on a cooling device 3.
  • the cooling device 3 is a cooling chuck.
  • the solid body 1 is coupled or glued or welded or screwed or clamped to a tool carrier (chuck), wherein the tool carrier preferably comprises a cooling functionality and thereby preferably becomes the cooling device 3.
  • the tool carrier preferably consists of an alloy having a composition of 45% -60%, in particular 54%, iron, 20% -40%, in particular 29% nickel and 10% -30%, in particular 17%, cobalt. The percentages here refer to the proportion of the total mass.
  • An example of a preferred cooling device 3 is shown in FIG.
  • the solid body 1 and the cooling device 3 preferably have the same or a similar thermal expansion.
  • thermal expansion is hereby preferably understood to mean any thermal expansion at a temperature increase of 10 ° C in a temperature range of -200 ° C to 200 ° C, in which the difference in thermal expansion of the solid 1 and the cooling device 3 less than 50%, in particular less than 25% or less than 10%, is the thermal expansion of the most expanding object (cooler or ingot).
  • the thermal expansion of the solid 1 is preferably less than 10ppm / K, more preferably less than 8ppm / K or less than 5ppm / K, e.g. less than 4ppm / K or substantially 4ppm / K or exactly 4ppm / K.
  • the solid body 1 is preferably fixed in the longitudinal direction with its bottom 7, which is preferably in the longitudinal direction relative to the surface 5, to the cooling device 3, in particular glued.
  • the laser beams are thus introduced to generate the modifications 9 over the surface 5, which is part of the solid state layer 12 to be separated, in the direction of the cooling device 3 in the solid state 1.
  • Fig. 9c shows schematically the generation of the modifications 9 by means of the laser beams.
  • the cooling device 3 causes the energy or heat introduced by the laser beams into the solid body 1 to be discharged from the solid body 1 at least partially and preferably by a majority.
  • FIG. 9d shows a schematic sectional view of the solid body 1 after the production of the modifications 9.
  • 4 blocks of modifications 9 can be seen, which lead to the 4 crack portions 25, 27, 28, 29.
  • reference numerals 41, 42, 43, 44 and 45 respectively denote areas without modifications 9 or areas in which fewer modifications 9 are made than in the areas where the blocks are produced at modifications 9.
  • 9e shows a state according to which a receiving layer 140, in particular comprising a polymer material, is arranged or generated on the surface 5, via which the laser beams have penetrated into the solid body 1.
  • the receiving layer 140 has preferably been produced as a film and adhered to the surface 5 after its production. However, it is also possible to form the receiving layer 140 by applying a liquid polymer to the surface 5 and then solidifying.
  • FIG. 9f schematically shows a temperature control of the recording layer 140.
  • the recording layer 140 is at a temperature below the ambient temperature, in particular at a temperature of less than 20 ° C, or less than 1 ° C or less than 0 ° C or less than -10 ° C or less than -50 ° C or less than -100 ° C tempered, in particular cooled.
  • the material of the receiving layer 140 experiences a glass transition as a result of the cooling.
  • the temperature of the receiving layer 140 by means of liquid nitrogen. Due to the temperature, in particular due to the glass transition, the receiving layer 140 contracts, whereby mechanical stresses in the solid state 1 are generated. As a result of the mechanical stresses, a crack connecting the crack portions 25, 27, 28, 29 is triggered, by means of which the solids content 12 is separated from the solid body 1.
  • FIG. 10 a shows a representation according to the temperature control of the receiving layer 140 shown in FIG. 9 f.
  • the solids content 12 is separated from the solid body 1 by the receiving layer 140 which is still arranged thereon.
  • 10b shows a renewed step of introducing modifications 9 into the residual solid 1, which is reduced in length at least by the already separated solid layer 12.
  • Fig. 10c shows schematically a further preferred embodiment.
  • the cooling device 3 is in this case coupled on the one hand with the solid body 1 and on the other hand with a traversing device 30, in particular an X / Y traversing device or a rotary table, coupled.
  • the traversing device 30 causes a movement of the solid 1, whereby this relative to the environment and a laser optics, in particular a scanner, can be moved defined.
  • FIG. 10d shows a further detailed schematic representation of FIG. 10c.
  • the round arrow inside the traversing device 30 indicates that it is rotatable.
  • a coupling layer in particular an adhesive layer, is provided between the solid body 1 and the cooling device 3.
  • the coupling layer 30 is in this case preferably designed such that it has a multiplicity of processing cycles, in particular more than 200 or more than 300 or more than 500 machining cycles, withstand high mechanical and thermal stress.
  • the laser beam source 401 preferably directs laser beams along a first laser beam conductor 402 to an optical system 40, from where the laser beams arrive at a scanner by means of a further laser beam conductor 403.
  • Fig. 1 1 shows the cooling device 3.
  • the cooling device 3 preferably has a guide support structure, which is preferably formed by a tool carrier, in particular a chuck.
  • the guide-support structure preferably has a round basic shape. This is advantageous since, with regard to spinning processes, an imbalance can be avoided more easily.
  • the round basic shape is preferably provided with flats 95-98. These flattenings are advantageous because they allow or facilitate coarse alignment and / or cassetting.
  • the cooling device 3 in particular the guide-support structure of the cooling device 3, a good thermal conductivity.
  • the cooling device 3 preferably has anodized aluminum, as a result of which abrasion particles are reduced or prevented. This is advantageous because it increases the clean room compatibility.
  • the chuck is preferably compatible with the detachment process.
  • the alignment elements 65-68 are preferably provided.
  • the alignment elements 65-68 are designed as alignment holes or slots or pins.
  • the alignment elements 65-68 preferably form carriers for the non-positive and / or positive rotational transmission.
  • the alignment elements 65-68 steel or ceramic inserts, whereby a high wear resistance is achieved.
  • the alignment elements 65-68 are preferably used for coupling the cooling device 3 with the traversing device 30.
  • dowel pins may be provided, these may e.g. be designed as hold-down, whereby e.g. a force and / or positive connection with the guide support structure can be generated.
  • a notch, groove or mark 76 is preferably provided on the cooling device 3. This feature is advantageous since it makes it possible to see the solid state orientation, in particular the orientation of the engine. The knowledge of the orientation of the solid, in particular of the ingot, can be exploited in order to be able to adapt the modifications 9 produced by the laser beams to the crystallographic orientation.
  • the reference numeral 75 denotes purely by way of example an optional data carrier element and / or data transmission element and / or data acquisition element.
  • the element identified by reference numeral 75 is designed as a barcode and / or RFI D element and / or SAW sensor. In particular, this allows integration into a Manufacturing Execution System (MES).
  • MES Manufacturing Execution System
  • cooling channels for guiding a cooling fluid are preferably provided or formed on or in the guide support structure.
  • the one or more cooling channels 78 can be used for temperature control of the solid 1, the cooling device 3 and / or a machine holder, in particular the traversing device 30.
  • Cooling fluid in particular a liquid, can be supplied into the cooling channel 78 via an inlet 77 and removed via an outlet 79.
  • the interface or the coupling layer between solid 1 and cooling device 3 preferably has a high thermal conductivity, in particular corresponding to the thermal conductivity of the solid 1 or the cooling device 3.
  • the cooling device 3 can additionally or alternatively be cooled via the air interface. At high speeds or traversing speeds of the traversing device 30, the air layer forming around the cooling device 3 is very thin, as a result of which heat can be dissipated very well.
  • an active thermostating is preferably integrated into the MES. Additionally or alternatively, process monitoring takes place for different substrate sizes and thicknesses.
  • a sealing of the fluid channels takes place during fixed storage by means of pressing and during rotation by means of e.g. a central ring seal.
  • the reference numeral 69 denotes an optional sensor device, which is preferably designed as a temperature sensor.
  • the sensor device is preferably a SAW temperature sensor.
  • FIG. 12 shows the optics 40, 608 preferably used to produce the modifications 9.
  • the method according to the invention preferably also comprises the step of providing an optic 40, 608, wherein the optic 608 preferably has at least two deflecting elements 610, 612 for deflecting light beam portions 616
  • the light beams 616, 618 are preferably generated and emitted by the laser beam source 401.
  • the inventive method preferably comprises the step of deflecting at least two mutually different light beam portions 616, 618 of the emitted light beam 606 by means of the deflecting elements 610, 612, 613, wherein the light beam portions 616, 618 are deflected such that they penetrate into the solid body 1 and wherein the mutually different deflected light beam portions 616, 618 meet in a focus 620 within the solid 1 and the physical modification 9, in particular in the form of a grid defect, is generated by the light beam portions 616, 618 coinciding in the focus 620 or the step of generating and emitting
  • the inventive method preferably comprises the step of deflecting the light rays 606 by means of the deflection elements 610, 612, 613, wherein the light rays 606 are deflected such that they penetrate into the solid body 1 and wherein the mutually different deflected light beams 606 meet in a focus 620 within the solid 1 and the physical modification 9, in particular in the form of a
  • At least two mutually different light beam portions 616, 618 of at least one emitted light beam 606, in particular the light beam portions of a plurality of emitted light beams, or the plurality of emitted light beams 606 are deflected by means of the deflection elements 610, 612, 613, wherein the light beam portions 616, 618 or the light beams 606 are deflected such that they penetrate into the solid 1 and wherein the mutually different deflected light beam portions 616, 618 or mutually different deflected light beams 606 meet in a focus 620 within the solid 1 and the physical modification 9, in particular in the form of a Lattice defect, by the coincidence 620 light beam portions 616, 618 or light beams 606 is generated in the focus.
  • At least two light beams 606 and preferably all light beams 606 can enter light beam portions 616, 618 that penetrate one another from different surface areas 622, 624 of solid 1 and penetrate into solid bodies 1 be divided, wherein the light beam portions 616, 186 of a respective light beam by means of mutually different deflection elements 610, 612, 613 are deflected.
  • the optics 608 preferably has at least one light beam splitting means 633, in particular a half mirror or beam splitter, and at least one light beam 606 is split into at least two light beam portions 616, 618 by means of at least the light beam splitting means 633.
  • a light beam 606 is split by means of a Lichtstrahlaufspaltsch 633, in particular a half mirror, in at least two light beam portions 616, 618, wherein a light beam portion 616 by means of at least two deflecting elements 610, 612, 613,
  • mirror is deflected such that it coincides with the other light beam portion 618 inside the solid 1 to form a focus 620 for generating the physical modification 9.
  • a plurality of physical modifications 9 are generated, wherein the physical modifications 9 preferably form or describe a plane and / or a contour and / or a silhouette and / or the outer shape of a body.
  • the at least one light beam 606 emitted by the laser beam source 401 preferably consists of coherent light and the light waves of the light beam portions 616, 618 which coincide in the focus 620 preferably have the same phase and the same frequency.
  • At least one light beam component 616, 618 or at least one light beam 606 is deflected and focused by a deflection element 610, 612, 613 configured as a parabolic mirror.
  • the at least one light beam portion 616, 618 or the at least one light beam 606 preferably passes through a deflecting element 610, 612, 613, in particular the parabolic mirror, a beam shaping device, in particular a 1D telescope, for changing the focus shape before the deflection and focusing.
  • the laser beam source 401 preferably produces at least or exactly two light beams, the light beams 606 being produced in such a way as to differ from the band gap of the material of the solid 1 with mutually different colors such that the modification 9 is produced by a two-photon process.
  • a first laser beam 606 forms a first laser field, the first light beam 606 having photons with a first energy, and a second laser beam 606 preferably forming a second laser field, the second laser beam 606 having photons with a second energy the first laser field is weaker than the second laser field and the first energy is greater than the second energy.
  • the modifications 9 in this case preferably have a vertical extent of less than 50 ⁇ m, and preferably of less than 30 ⁇ m, and particularly preferably of less than 20 ⁇ m.
  • the focus 620 is preferably less than 1000 pm, and preferably less than 500 pm, and more preferably less than 200 pm from a penetration surface 626 of the solid 1, wherein at least individual light beam portions 616, 618 penetrate via the penetration surface 626 for generating the physical modification 9 in the solid 1.
  • the focus 620 is preferably generated in an overlap fraction of at least two intersecting light beam waists 630, 632, the light beam waists 630, 632 being generated by the light beam portions 616, 618 or light rays 606.
  • FIGS. 14a to 14c show different microscopic representations of a laser-conditioned or modified solid 1, in particular majority or substantially or completely composed of e.g. a semiconductor material, in particular of SiC.
  • a 6H-SiC line defect field 1 E is shown, which was generated with pulse intervals of 0.4 pm, line spacings of linearly generated crystal lattice modifications 20, 22 of 2 pm and a pulse repetition frequency of 128 kHz.
  • the pulse intervals can be e.g. be provided between 0.01 pm and 10 pm and / or the line spacing between 0.01 pm and 20 pm are provided and / or the pulse repetition frequency between 16kHz and 1024kHz be provided.
  • Fig. 14b an enlarged detail of the area indicated by the frame in Fig. 14a is shown. It can be seen that the block spacings 24, 26 are preferably uniform and, e.g. 66 pm. Fig. 14c also shows block distances which are about 66 pm. However, it is also conceivable that the block distances lie in other areas, such as e.g. in the range between 4 pm and 1000 pm.
  • FIG. 14a shows a plan view of a solid body through a polished surface of the solid.
  • the structure shown is thus formed within the solid or produced by the modification, in particular by means of laser.
  • Figures 15a and 15b show microscopic representations of modified in the context of the invention solids.
  • the reference numeral 14 preferably indicates the
  • Reference numeral 9 denotes the modified region in the solid 1. It can be seen from this illustration that off center of the modified region 9 or offset from the center 15 of the modified region 9, a crack 13 in the solid 1 propagates. In this case, it is possible for the location and the direction of propagation of the crack 13 to be defined defined by defined parameters for generating the modification, wherein the crack 13 in the example shown is preferably parallel or substantially parallel to the main surface 18. The crack 13 can thus be generated and triggered by parameter setting / s specifically through the modifications 9, at the edge of the modifications 9 or at a distance from the modifications 9.
  • the underside of the solid 1, in particular of the wafer, is indicated by the reference numeral 7.
  • the reference numeral 17 indicates a reference length, which measures preferably 50 pm.
  • the cross-sectional area shown extends at right angles to the main surface 18 of the solid 1, i. about the height of the lateral surface 19, wherein preferably the modifications 9 are introduced into the solid 1 via the main surface 18 or a generation of the modifications 9 is preferably effected through the main surface 18 therethrough.
  • the main surface 18 is particularly preferably a multiple, in particular at least twice or at least three times or at least four times or at least 10 times or at least 20 times or at least 50 times larger than the lateral surface 19.
  • FIG. 15a preferably shows a 6H-SiC line defect field 1 C generated at pulse intervals of 0.2 ⁇ m, line spacings of linearly generated crystal lattice modifications 20, 22 of 3 ⁇ m and a pulse repetition frequency of 128 kHz.
  • the pulse intervals can be e.g. between 0.01 pm and 10 pm and / or the line spacing e.g. between 0.01 pm and 20 pm and / or the pulse repetition frequency e.g. between 16kHz and 1024kHz.
  • Fig. 15b shows a plan view of a part of the solid 1 and through the polished
  • the modifications 9 are particularly preferably generated in a plane parallel to the main surface 18, preferably distributed uniformly or homogeneously.
  • the modifications 9 are produced in such a way that they represent patterns.
  • the modifications 9 in the sense of the present invention can be produced in different regions of the solid body 1, wherein the regions preferably have the same dimensions, in different numbers and / or with different parameters.
  • the reference numeral 17 indicates in Fig. 14b a reference length, which measures 100 ⁇ preferably.
  • 16a preferably shows a 6H-SiC line defect field 1A, which was generated with pulse intervals of 0.2 ⁇ m, line spacings of linearly generated crystal lattice modifications 20, 22 of 1 ⁇ m and a pulse repetition frequency of 128 kHz.
  • the pulse intervals can be e.g. be provided between 0.01 pm and 10 ⁇ and / or the line spacing, e.g. between 0.01 ⁇ and 20 ⁇ be provided and / or the pulse repetition frequency, for. between 16kHz and 1024kHz.
  • a crack 13 propagates in the solid 1.
  • the crack 13 thus spreads at a distance from the center of the modifications 9 or the crack spreads in a region of the solid 1, which is spaced from the Hauptmodtechnischmaschinesanteil.
  • the main modification portion is, e.g. in the case of modifications 9 produced by LASER, in which case the proportion of the solid 1 in which the laser has its focus is preferred.
  • the reference numeral 17 denotes a reference length, which is preferably 100 pm.
  • FIG. 17a shows a modification 9 formed, for example, in the shape of a laser waist.
  • a modification 9 may preferably have a shape that lies in the design space between a spherical shape, in particular a circle, and a polygon, in particular a quadrilateral, in particular a rectangle, such as a square.
  • FIG. 17 a shows that the detachment region 2 does not extend through the center Z of the modification 9.
  • the Separation area 2 by 1/20 or 1/10 or 1/5 or 1/4 or 1/3 or half the maximum length of the modification 9 spaced from the center of the modification.
  • Fig. 17b shows e.g. a variant according to which the separation region 2 passes the modification 9 at the outer edge or in the region of the outer edge of the modification 9, and therefore the modification particularly preferably passes on the outside but does not pass through the modification.
  • FIG. 17 c shows a further variant according to which the detachment region 2 is preferably at least 0.01 ⁇ m or at least 0.1 ⁇ m or at least 1 ⁇ m or at least 5 ⁇ m or at least 10 ⁇ m from the modification 9.
  • FIGS. 17d to 17f are constructed analogously to FIGS. 17a to 17c.
  • FIGS. 17d to 17e show a variant according to which the effect achieved by the modification 9, namely the local severing of the crystal lattice of the solid 1, is achieved only by the interaction of several modifications 9, in particular of at least 2, 5, 10, 20, 50 or at least 100 modifications.
  • FIGS. 18a to 18d show various arrangements of modifications 9 and the detachment regions 2 resulting from modification 9. If required, therefore, the parameters required to produce the modification can be set such that the detachment region 2 passes through the modifications 9 (cf. FIGS. 18a and 18b) or that the separation region is spaced from the modifications 9. (see Figures 18c-18d).
  • FIGS. 19a-19d show further variants according to which a detachment region 2 is formed as a result of the generation of modifications 9 in a solid body 1.
  • the centers of the modifications 9 and 23 can be provided on one side of the detachment region 2.
  • the modifications are produced identically except for the location of their generation (in particular the distance to the main surface).
  • the focus and / or the amount of energy and / or the loading time, etc. changes.
  • the centers of the modifications 9 and 23 are respectively on different sides of the detachment area 2.
  • Fig. 20 shows an arrangement according to which the modifications 9 are generated locally in different concentrations (AD) and / or distributions. In this case, it is conceivable, for example, that locally different modification concentrations or distributions are provided for triggering a main crack connecting the individual cracks. In the region of a main tear trigger point, more modifications are preferably generated or a higher modification density is provided.
  • FIGS. 17a-17f, 18a-18d, 19a-19d, 20 can preferably be combined with one another.
  • FIG. 21 shows a plan view of a 6H-SiC line defect parameter field 1 C, wherein a laser damage of 1 cm 2 and a thickness of 245 +/- 3 ⁇ m are preferably present.
  • the top view is taken through the polished main surface of the solid 1 and shows a state before separating a solid layer 1 1 along the separation region. 2
  • FIGS. 22a and 22b preferably show two views of a 6H-SiC line defect parameter field 1 C, wherein a laser damage of 1 cm 2 and a thickness of 120 +/- 3 ⁇ m are preferably present.
  • the two surface structures shown are formed by the separation of the solid 1 in two parts.
  • the reference numeral 60 designates here in or substantially in the horizontal direction extending cracks.
  • FIG. 22a shows laser damage in addition to the crack traces 60.
  • the surface shown in FIG. 22b in contrast to the surface shown in FIG. 22a, is significantly more homogeneous or has fewer damages and / or cracks.
  • the separation region 2 generated off-center of the center Z of the modifications thus enables the creation of differently structured surfaces.
  • the reference numeral 17 denotes a reference length, which is preferably 1000 pm.
  • Fig. 23 shows schematically that the crystal lattice of the solid 1 is changed by the introduction or generation of modifications 9 such that crack-guiding stresses 50, preferably spaced from the center Z of the modification (s) 9, are produced.
  • crack propagation stresses 50 are produced in the crystal lattice by the modifications 9 in at least one solid area surrounding a modification 9 in such a way that a crack separating the solid body 1 is guided by the crack-guiding stresses 50, in particular offset from the center Z of the respective modifications 9.
  • the mechanical stresses are preferably generated by the temperature control of a layer arranged or generated on the solid body 1 or introduced into the solid body 1.
  • the present invention may relate to a method of separating at least a solid portion of a solid, especially a wafer.
  • the method comprises at least the steps of: modifying the crystal lattice of the solid by means of a laser, in particular a picosecond or femtosecond laser, wherein a plurality of modifications are produced in the crystal lattice, the lattice being at least in consequence of the modifications in the regions surrounding the modifications in each case a share, wherein the cracks in the region of the modifications a detachment area or more Generalablinate Bire is specified.
  • the method may comprise the step of providing a solid 1 to be processed, the solid 1 preferably consisting of a chemical compound.
  • a LASER light source can be provided. Furthermore, preferably the addition of the solid 1 with LAS ER radiation of the LASER light source takes place, wherein the LAS ER radiation tempered defines a predetermined proportion of the solid 1 in the interior of the solid 1 to form a detachment region (2), wherein the in the predetermined proportion of the solid 1 generated temperature is so great that the predetermined proportion forming material undergoes a predetermined material conversion.
  • the detachment of the solid state layer from the solid can thus result solely on the basis of the modifications produced according to the invention.
  • the modifications 9 are produced as a predetermined transformation of the material forming the predetermined portion, wherein by the laser beams such a high temperature, in particular more than 200 ° C or more than 500 ° C or more than 800 ° C or more than 1000 ° C or more than 1500 ° C or more than 2000 ° C, the matter conversion is effected.
  • a receiving layer on the solid for holding the solid portion and thereafter subjecting the receiving layer to thermal, in particular mechanical, generation of stresses in the solid body a crack, in particular a main crack, in which solid body propagates along the detachment region, through which the solid-state layer is separated from the solid, preferably at least the majority of any partial cracks previously generated in the region of the modifications are joined together by the crack.
  • a method for generating a separation region in a solid body for detaching a solid fraction, in particular a solid layer, of the solid is described, wherein the solid portion to be detached is thinner than the solids reduced by the solid fraction, at least comprising the steps: providing a solid to be processed, wherein the solid preferably consists of a chemical compound; Providing a LASER light source; Applying to the solid with LASER rays of the LASER light source, wherein the laser beams penetrate over a surface of the solid portion to be separated in the solid, said LASERstrahlen a predetermined proportion of the solid in the interior of the solid to form a release region or more Supplementablinate Schemee defined acted upon, characterized in that several modifications in the crystal lattice of the solid body are generated successively by the laser application, wherein the crystal lattice enters at least in each case a portion thereof as a result of the modifications in the regions surrounding the modifications, whereby the separation region is predetermined by the cracks in the region of the modifications or several partial release
  • a method for separating at least one solid fraction of a solid, in particular a wafer comprising at least the steps: modifying the crystal lattice of the solid by means of a modifying agent, in particular a laser, in particular a picosecond or femtosecond laser, wherein several modifications the crystal lattice is generated, the crystal lattice entering at least in each case a portion thereof as a result of the modifications in the regions surrounding the modifications, a separation region being predetermined by the cracks in the region of the modifications, arranging a receiving layer on the solid body for holding the solid fraction, thermal stressing of the receiving layer for, in particular mechanical, generating stresses in the solid body, which propagates through the stresses a main crack in the solid body along the separation region, at least the majority of cracks in Berei ch the modifications together.
  • a modifying agent in particular a laser, in particular a picosecond or femtosecond laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Dicing (AREA)

Abstract

La présente invention concerne un procédé permettant de produire une zone de séparation (2) dans un corps solide (1) de manière à séparer une partie (12) dudit corps solide, en particulier une couche (12) de corps solide, dudit corps solide (1), la partie (12) du corps solide à détacher étant plus mince que le corps solide réduit de ladite partie (12). Selon l'invention, ledit procédé comprend au moins les étapes suivantes : préparation d'un corps solide (1) à usiner, ledit corps solide (1) étant constitué de préférence d'un composé chimique ; préparation d'une source de lumière laser ; application d'un rayonnement laser produit par la source de lumière laser sur le corps solide (1), les faisceaux laser pénétrant dans le corps solide (1) par une surface (5) de la partie (12) du corps solide à séparer, les faisceaux laser affectant de manière définie une partie prédéfinie du corps solide (1) à l'intérieur dudit corps solide (1) pour former une zone de séparation (2) ou plusieurs parties de zone de séparation (25, 27, 28, 29). Ledit procédé est caractérisé en ce que l'exposition au laser produit plusieurs modifications (9) successives dans le réseau cristallin, ledit réseau cristallin pénétrant, à la suite des modifications (9), dans les zones entourant lesdites modifications (9), au moins dans une partie desdites zones, la zone de séparation (2) étant prédéfinie ou plusieurs parties de zone de séparation (25, 27, 28, 29) étant prédéfinies par les fissures dans la zone des modifications (9).
EP15801449.8A 2014-11-27 2015-11-27 Séparation de corps solide au moyen de la transformation de matière Withdrawn EP3223993A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP18178276.4A EP3399542B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP22195120.5A EP4122633A1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP20151833.9A EP3666445B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP18175761.8A EP3395489B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102014017583 2014-11-27
DE102014017582 2014-11-27
DE102014018841.8A DE102014018841A1 (de) 2014-11-27 2014-12-17 Laserbasiertes Trennverfahren
DE102014018720.9A DE102014018720A1 (de) 2014-11-27 2014-12-17 Festkörpertrennverfahren mit laserbasierter Vorschädigung
DE102015000449.2A DE102015000449A1 (de) 2015-01-15 2015-01-15 Festkörperteilung mittels Stoffumwandlung
PCT/EP2015/077981 WO2016083610A2 (fr) 2014-11-27 2015-11-27 Séparation de corps solide au moyen de la transformation de matière

Related Child Applications (4)

Application Number Title Priority Date Filing Date
EP18175761.8A Division EP3395489B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP20151833.9A Division EP3666445B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP18178276.4A Division EP3399542B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP22195120.5A Division EP4122633A1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances

Publications (1)

Publication Number Publication Date
EP3223993A2 true EP3223993A2 (fr) 2017-10-04

Family

ID=56075088

Family Applications (5)

Application Number Title Priority Date Filing Date
EP18175761.8A Active EP3395489B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP15801449.8A Withdrawn EP3223993A2 (fr) 2014-11-27 2015-11-27 Séparation de corps solide au moyen de la transformation de matière
EP22195120.5A Pending EP4122633A1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP20151833.9A Active EP3666445B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP18178276.4A Active EP3399542B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances

Family Applications Before (1)

Application Number Title Priority Date Filing Date
EP18175761.8A Active EP3395489B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances

Family Applications After (3)

Application Number Title Priority Date Filing Date
EP22195120.5A Pending EP4122633A1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP20151833.9A Active EP3666445B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances
EP18178276.4A Active EP3399542B1 (fr) 2014-11-27 2015-11-27 Division de corps solide au moyen d'une conversion de substances

Country Status (8)

Country Link
US (3) US11407066B2 (fr)
EP (5) EP3395489B1 (fr)
JP (2) JP6396505B2 (fr)
KR (5) KR102587022B1 (fr)
CN (3) CN107107260B (fr)
MY (1) MY174094A (fr)
SG (1) SG11201704275UA (fr)
WO (1) WO2016083610A2 (fr)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015000449A1 (de) 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
EP4234156A3 (fr) 2014-11-27 2023-10-11 Siltectra GmbH Méthode de séparation basée sur l'utilisation d'un laser
KR102587022B1 (ko) 2014-11-27 2023-10-10 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
JP6698468B2 (ja) * 2016-08-10 2020-05-27 株式会社ディスコ ウエーハ生成方法
DE102017010284A1 (de) * 2017-11-07 2019-05-09 Siltectra Gmbh Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten
JP7130667B2 (ja) * 2017-04-20 2022-09-05 ジルテクトラ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構成部材が設けられた固体層を薄化する方法
DE102017003830A1 (de) 2017-04-20 2018-10-25 Siltectra Gmbh Verfahren zur Waferherstellung mit definiert ausgerichteten Modifikationslinien
DE102017007585A1 (de) 2017-08-11 2019-02-14 Siltectra Gmbh Vorrichtung und Verfahren zum Beaufschlagen von Spannungserzeugungsschichten mit Druck zum verbesserten Führen eines Abtrennrisses
JP6923877B2 (ja) * 2017-04-26 2021-08-25 国立大学法人埼玉大学 基板製造方法
DE102017007586A1 (de) 2017-08-11 2019-02-14 Siltectra Gmbh Fertigungsanlage zum Abtrennen von Wafern von Spendersubstraten
JP7267923B2 (ja) 2017-09-04 2023-05-02 リンテック株式会社 薄型化板状部材の製造方法、及び薄型化板状部材の製造装置
JP6943388B2 (ja) * 2017-10-06 2021-09-29 国立大学法人埼玉大学 基板製造方法
CN107731887B (zh) * 2017-11-22 2020-05-19 武汉华星光电半导体显示技术有限公司 柔性oled显示面板的制备方法
DE102018001327A1 (de) * 2018-02-20 2019-08-22 Siltectra Gmbh Verfahren zum Erzeugen von kurzen unterkritischen Rissen in Festkörpern
JP7256604B2 (ja) * 2018-03-16 2023-04-12 株式会社ディスコ 非破壊検出方法
US10940611B2 (en) 2018-07-26 2021-03-09 Halo Industries, Inc. Incident radiation induced subsurface damage for controlled crack propagation in material cleavage
US11309191B2 (en) 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density
JP7327920B2 (ja) * 2018-09-28 2023-08-16 株式会社ディスコ ダイヤモンド基板生成方法
JP7285067B2 (ja) 2018-10-30 2023-06-01 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
WO2020090894A1 (fr) 2018-10-30 2020-05-07 浜松ホトニクス株式会社 Dispositif et procédé de traitement au laser
JP7246919B2 (ja) * 2018-12-21 2023-03-28 浜松ホトニクス株式会社 レーザ加工方法、半導体部材製造方法及びレーザ加工装置
US11024501B2 (en) * 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
DE102019201438B4 (de) * 2019-02-05 2024-05-02 Disco Corporation Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
KR20210153091A (ko) * 2019-04-19 2021-12-16 도쿄엘렉트론가부시키가이샤 처리 장치 및 처리 방법
DE102019111985A1 (de) 2019-05-08 2020-11-12 Infineon Technologies Ag Verfahren zum herstellen von siliziumcarbid-vorrichtungen und wafer-verbund, der mit laser modifizierte zonen in einem handhabungssubstrat enthält
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
SE1950611A1 (en) 2019-05-23 2020-09-29 Ascatron Ab Crystal efficient SiC device wafer production
EP4012077A4 (fr) 2019-08-06 2023-09-20 Kwansei Gakuin Educational Foundation Procédé de fabrication de substrat en sic
DE102019122614A1 (de) 2019-08-22 2021-02-25 Infineon Technologies Ag Ausgangssubstrat, wafer-verbund und verfahren zum herstellen von kristallinen substraten und halbleitervorrichtungen
CN114423888A (zh) 2019-09-27 2022-04-29 学校法人关西学院 半导体衬底的制造方法和半导体衬底的制造装置
US20220375749A1 (en) 2019-09-27 2022-11-24 Kwansei Gakuin Educational Foundation Method of manufacturing sic semiconductor device and sic semiconductor device
EP3984687A1 (fr) * 2020-10-16 2022-04-20 Bystronic Laser AG Tête de traitement du faisceau et procédé de traitement du faisceau
DE102023200049A1 (de) 2023-01-03 2024-07-04 Robert Bosch Gesellschaft mit beschränkter Haftung Herstellungsverfahren mit temporärem Schutz von Mikrostrukturen

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JPH0929472A (ja) * 1995-07-14 1997-02-04 Hitachi Ltd 割断方法、割断装置及びチップ材料
US7176108B2 (en) * 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US7052978B2 (en) 2003-08-28 2006-05-30 Intel Corporation Arrangements incorporating laser-induced cleaving
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
WO2007087354A2 (fr) * 2006-01-24 2007-08-02 Baer Stephen C Clivage de tranches à partir de cristaux de silicium
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US20080070340A1 (en) 2006-09-14 2008-03-20 Nicholas Francis Borrelli Image sensor using thin-film SOI
US7727790B2 (en) * 2007-01-30 2010-06-01 Goldeneye, Inc. Method for fabricating light emitting diodes
US8440129B2 (en) 2007-11-02 2013-05-14 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
CN101740331B (zh) 2008-11-07 2012-01-25 东莞市中镓半导体科技有限公司 利用固体激光器无损剥离GaN与蓝宝石衬底的方法
KR20100070159A (ko) 2008-12-17 2010-06-25 삼성전자주식회사 웨이퍼 가공방법
WO2010072675A2 (fr) * 2008-12-23 2010-07-01 Pfeffer, Christian Procédé de production de minces couches libres de matériaux semi-conducteurs avec des surfaces structurées
JP5619474B2 (ja) 2009-05-26 2014-11-05 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
WO2011071889A1 (fr) * 2009-12-07 2011-06-16 J.P. Sercel Associates, Inc. Systèmes et procédés de décollement au laser
JP5614738B2 (ja) * 2010-01-26 2014-10-29 国立大学法人埼玉大学 基板加工方法
JP5479924B2 (ja) 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP5775266B2 (ja) 2010-05-18 2015-09-09 株式会社 オプト・システム ウェハ状基板の分割方法
DE102010030358B4 (de) 2010-06-22 2014-05-22 Osram Opto Semiconductors Gmbh Verfahren zum Abtrennen einer Substratscheibe
US9296066B2 (en) * 2010-07-12 2016-03-29 Rofin-Sinar Technologies Inc. Method of material processing by laser filamentation
JP2012096274A (ja) 2010-11-04 2012-05-24 Disco Corp レーザー加工装置
RU2459691C2 (ru) 2010-11-29 2012-08-27 Юрий Георгиевич Шретер Способ отделения поверхностного слоя полупроводникового кристалла (варианты)
JP5480169B2 (ja) 2011-01-13 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法
JP6004339B2 (ja) 2011-02-10 2016-10-05 信越ポリマー株式会社 内部応力層形成単結晶部材および単結晶基板製造方法
US20130312460A1 (en) 2011-02-10 2013-11-28 National University Corporation Saitama University Manufacturing method of single crystal substrate and manufacturing method of internal modified layer-forming single crystal member
CN103380482B (zh) * 2011-02-10 2016-05-25 信越聚合物株式会社 单结晶基板制造方法及内部改质层形成单结晶部件
JP5950269B2 (ja) * 2011-02-10 2016-07-13 国立大学法人埼玉大学 基板加工方法及び基板
RU2469433C1 (ru) 2011-07-13 2012-12-10 Юрий Георгиевич Шретер Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты)
JP2013046924A (ja) 2011-07-27 2013-03-07 Toshiba Mach Co Ltd レーザダイシング方法
JP5917862B2 (ja) * 2011-08-30 2016-05-18 浜松ホトニクス株式会社 加工対象物切断方法
JP5899513B2 (ja) 2012-01-12 2016-04-06 パナソニックＩｐマネジメント株式会社 基板製造方法、および改質層形成装置
JP5843393B2 (ja) * 2012-02-01 2016-01-13 信越ポリマー株式会社 単結晶基板の製造方法、単結晶基板、および、内部改質層形成単結晶部材の製造方法
JP5995045B2 (ja) 2012-02-06 2016-09-21 信越ポリマー株式会社 基板加工方法及び基板加工装置
WO2013126927A2 (fr) 2012-02-26 2013-08-29 Solexel, Inc. Systèmes et procédés pour une division par laser et un transfert de couche de dispositif
CN202655797U (zh) 2012-05-18 2013-01-09 杭州士兰明芯科技有限公司 激光剥离led衬底的系统
CN102664221B (zh) 2012-05-18 2015-05-27 杭州士兰明芯科技有限公司 Led衬底的剥离方法
EP2754524B1 (fr) * 2013-01-15 2015-11-25 Corning Laser Technologies GmbH Procédé et dispositif destinés au traitement basé sur laser de substrats plats, galette ou élément en verre, utilisant un faisceau laser en ligne
JP2016511934A (ja) 2013-01-16 2016-04-21 キューマット インコーポレイテッドＱｍａｔ， Ｉｎｃ． 光電子デバイスを形成する技術
CN105102179B (zh) 2013-03-27 2017-04-26 浜松光子学株式会社 激光加工装置及激光加工方法
DE102013007672A1 (de) * 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
CN103380842B (zh) 2013-08-09 2015-03-18 山西省农业科学院经济作物研究所 利用绿豆全株粉制备保健早茶的方法
JP6531885B2 (ja) 2013-10-07 2019-06-19 信越ポリマー株式会社 内部加工層形成単結晶部材およびその製造方法
DE102014013107A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102015000449A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
EP4234156A3 (fr) * 2014-11-27 2023-10-11 Siltectra GmbH Méthode de séparation basée sur l'utilisation d'un laser
KR102587022B1 (ko) * 2014-11-27 2023-10-10 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
US11309191B2 (en) * 2018-08-07 2022-04-19 Siltectra Gmbh Method for modifying substrates based on crystal lattice dislocation density

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
CN107107260A (zh) 2017-08-29
KR102587022B1 (ko) 2023-10-10
US11833617B2 (en) 2023-12-05
JP2017526161A (ja) 2017-09-07
KR101864558B1 (ko) 2018-06-04
US20240058899A1 (en) 2024-02-22
US20180290232A1 (en) 2018-10-11
JP6396505B2 (ja) 2018-09-26
EP3399542A1 (fr) 2018-11-07
CN108838562A (zh) 2018-11-20
EP3395489B1 (fr) 2024-06-19
EP4122633A1 (fr) 2023-01-25
CN108838562B (zh) 2021-08-17
EP3666445B1 (fr) 2022-10-19
US11407066B2 (en) 2022-08-09
KR20230145246A (ko) 2023-10-17
KR20180059569A (ko) 2018-06-04
MY174094A (en) 2020-03-09
KR20220058670A (ko) 2022-05-09
KR20170086644A (ko) 2017-07-26
EP3666445A1 (fr) 2020-06-17
KR20200006641A (ko) 2020-01-20
US20180126484A1 (en) 2018-05-10
SG11201704275UA (en) 2017-06-29
WO2016083610A3 (fr) 2016-09-22
JP6748144B2 (ja) 2020-08-26
JP2018152582A (ja) 2018-09-27
EP3395489A1 (fr) 2018-10-31
WO2016083610A2 (fr) 2016-06-02
EP3399542B1 (fr) 2023-04-12
CN107107260B (zh) 2022-02-11
CN108857049A (zh) 2018-11-23

Similar Documents

Publication Publication Date Title
EP3395489B1 (fr) Division de corps solide au moyen d'une conversion de substances
EP3253529B1 (fr) Séparation d'un corps solide par modification du matériau
EP3055098B1 (fr) Procédé de fabrication de tranches de silicium
EP3223994B1 (fr) Méthode de séparation basée sur l'utilisation d'un laser
WO2016162428A1 (fr) Procédé servant à fabriquer des tranches en économisant les matériaux et usinage de tranches
EP3245665B1 (fr) Procédé pour fabriquer une tranche irrégulière
WO2015052218A1 (fr) Création d'un point de départ de fissure ou d'un guide de fissuration afin de permettre un meilleur détachement d'une couche de solide à partir d'un solide
DE102015008034A1 (de) Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats
DE102014002600A1 (de) Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
DE102015004603A1 (de) Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
EP3137657B1 (fr) Procédé combiné de fabrication de corps solides par traitement au laser et tensions thermo-induites pour la production de corps solides tridimensionnels
EP3147068B1 (fr) Nouveau procédé de fabrication de tranches
DE102014018720A1 (de) Festkörpertrennverfahren mit laserbasierter Vorschädigung
EP3201941B1 (fr) Procédé combiné de fabrication de tranches au moyen d'une couche réceptrice pourvue de trous
DE102015004347A1 (de) Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers
EP3608048B1 (fr) Procédé de fabrication d'éléments de corps solide au moyen du traitement laser et de contraintes induites par la température

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170627

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIN1 Information on inventor provided before grant (corrected)

Inventor name: RIESKE, RALF

Inventor name: BEYER, CHRISTIAN

Inventor name: RICHTER, JAN

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SILTECTRA GMBH

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SILTECTRA GMBH

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: SILTECTRA GMBH

RIN1 Information on inventor provided before grant (corrected)

Inventor name: RIESKE, RALF

Inventor name: BEYER, CHRISTIAN

Inventor name: RICHTER, JAN

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Free format text: PREVIOUS MAIN CLASS: B23K0026000000

Ipc: H01L0021780000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/02 20060101ALI20190808BHEP

Ipc: B28D 5/00 20060101ALI20190808BHEP

Ipc: B23K 26/40 20140101ALI20190808BHEP

Ipc: H01L 21/78 20060101AFI20190808BHEP

Ipc: B23K 26/53 20140101ALI20190808BHEP

Ipc: B23K 103/00 20060101ALI20190808BHEP

INTG Intention to grant announced

Effective date: 20190905

19A Proceedings stayed before grant

Effective date: 20200310

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20200603