EP2782148B1 - Lichtemittierende halbleitervorrichtung - Google Patents

Lichtemittierende halbleitervorrichtung Download PDF

Info

Publication number
EP2782148B1
EP2782148B1 EP13819369.3A EP13819369A EP2782148B1 EP 2782148 B1 EP2782148 B1 EP 2782148B1 EP 13819369 A EP13819369 A EP 13819369A EP 2782148 B1 EP2782148 B1 EP 2782148B1
Authority
EP
European Patent Office
Prior art keywords
light
electrode
light emitting
emitting device
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP13819369.3A
Other languages
English (en)
French (fr)
Other versions
EP2782148A2 (de
EP2782148A4 (de
Inventor
Soo Kun Jeon
Eun Hyun Park
Yong Deok Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semicon Light Co Ltd
Original Assignee
Semicon Light Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120078278A external-priority patent/KR101364246B1/ko
Priority claimed from KR1020120083097A external-priority patent/KR101371545B1/ko
Priority claimed from KR1020120098423A external-priority patent/KR101419867B1/ko
Priority claimed from KR1020130002950A external-priority patent/KR101378948B1/ko
Application filed by Semicon Light Co Ltd filed Critical Semicon Light Co Ltd
Publication of EP2782148A2 publication Critical patent/EP2782148A2/de
Publication of EP2782148A4 publication Critical patent/EP2782148A4/de
Application granted granted Critical
Publication of EP2782148B1 publication Critical patent/EP2782148B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • the present disclosure relates generally to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device having a light reflecting face.
  • semiconductor light emitting device refers to a semiconductor optical device which generates light via electron-hole recombination
  • group III-nitride semiconductor light emitting device consists of a compound containing Al (x) Ga (y) In (1-x-y) N (wherein, 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • GaAs-based semiconductor light emitting device used for red light emission.
  • FIG. 1 is a view illustrating an example of the semiconductor light emitting device proposed in US Pat. No. 7,262,436 .
  • the semiconductor light emitting device includes a substrate 100, an n-type semiconductor layer 300 grown on the substrate 100, an active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, electrodes 901, 902 and 903 formed on the p-type semiconductor layer 500, while serving as reflective films, and an n-side bonding pad 800 formed on the n-type semiconductor layer 300 which has been etched and exposed.
  • the n-type semiconductor layer 300 and the p-type semiconductor layer 500 can be of opposite conductive types.
  • a buffer layer (not shown) is provided between the substrate 100 and the n-type semiconductor layer 300.
  • a chip having this structure i.e., where all the electrodes 901, 902 and 903 and the n-side bonding pad 800 are formed on the opposite side of the substrate 100, with the electrodes 901, 902 and 903 serving as reflective films, is called a flip-chip.
  • the electrodes 901, 902 and 903 are made up of an electrode 901 (e.g., Ag) with a high reflectance, an electrode 903 (e.g., Au) for bonding, and an electrode 902 (e.g., Ni) for preventing diffusion between materials of the electrode 901 and materials of the electrode 903. While this metal reflective film structure has a high reflectance and is advantageous for current spreading, it has a drawback that the metal absorbs light.
  • FIG. 2 is a view illustrating an example of the semiconductor light emitting device proposed in JP Pub. No. 2006-120913 .
  • the semiconductor light emitting device includes a substrate 100, a buffer layer grown on the substrate 100, an n-type semiconductor layer 300 grown on the buffer layer 200, an active layer 400 grown on the n-type semiconductor layer 300, a p-type semiconductor layer 500 grown on the active layer 400, a light-transmitting conductive film 600 with a current spreading function formed on the p-type semiconductor layer 500, a p-side bonding pad 700 formed on the light-transmitting conductive film 600, and an n-side bonding pad 800 formed on the n-type semiconductor layer 300 which has been etched and exposed.
  • a DBR (Distributed Bragg Reflector) 900 and a metal reflective film 904 are provided on the light-transmitting conductive film 600. While this structure reduces light absorption by the metal reflective film 904, it has a drawback that current spreading is relatively poor, compared with the use of the electrodes 901, 902 and 903.
  • FIG. 12 is a view illustrating an example of the semiconductor light emitting device proposed in JP Pub. No. 2009-164423 .
  • a DBR 900 and a metal reflective film 904 are provided on a plurality of semiconductor layers 300, 400 and 500, a phosphor 1000 is provided on opposite side thereof.
  • the metal reflective film 904 and an n-side bonding pad 800 are electrically connected with external electrodes 1100 and 1200.
  • the external electrodes 1100 and 1200 can be lead frames for a package, or electrical patterns provided on the COB (Chip on Board) or PCB (Printed Circuit Board).
  • the phosphor 1000 can be coated conformally, or can be mixed with an epoxy resin and then used to cover the external electrodes 1100 and 1200.
  • the phosphor 1000 absorbs light that is generated in the active layer, and converts this light to a light of longer or shorter wavelength.
  • a semiconductor light emitting device comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, wherein the first light-transmitting film has a refractive index lower than an effective refr
  • a semiconductor light emitting device comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode supplying either electrons or holes to the plurality of semiconductor layers; a second electrode supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive reflective film, which is formed on the second semiconductor layer, for reflecting light from the active layer towards the first semiconductor layer on the side of the growth substrate and includes a dielectric film and a distributed bragg reflector in order mentioned from the second semiconductor layer; and a light-transmitting film formed on the distributed bragg reflector as part of
  • FIG. 3 to FIG. 5 are views illustrating an example of the semiconductor light emitting device according to the present disclosure, in which FIG. 3 is a cross section view taken along line A-A of FIG. 4 , and FIG. 5 is a cross section view taken along line B-B of FIG. 4 .
  • a non-conductive reflective film 91 and an electrode 92 are not shown in FIG. 4 .
  • the semiconductor light emitting device includes a substrate 10, a buffer layer 20 grown on the substrate 10, an n-type semiconductor layer 30 grown on the buffer layer 20, an active layer grown on the n-type semiconductor layer 30, generating light via electron-hole recombination, and a p-type semiconductor layer 50 grown on the active layer 40.
  • the substrate 10, which can eventually be removed, is mainly made of sapphire, SiC, Si, GaN or the like, and the buffer layer 20 can be omitted.
  • an electrode 80 may be formed on the n-type semiconductor layer 30 side after the substrate 10 is removed therefrom, or on the conductive substrate 10 side.
  • the positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 can be changed with each other.
  • those semiconductor layers are mainly made of GaN.
  • Each of the semiconductor layers 20, 30, 40 and 50 can be configured in a plurality of sub layers, and the semiconductor light emitting device may also have an additional semiconductor layer.
  • the semiconductor light emitting device includes an electrode 92 that provides holes to the p-type semiconductor layer 50.
  • a finger electrode 81 extended into the n-type semiconductor layer 30 forms a part of the electrode 80.
  • the electrode 80 may have an additional bump that makes the electrode 80 sufficiently high enough to be coupled with a package, or the electrode 80 per se may be deposited up to a height where it can be coupled with a package as shown in FIG. 2 .
  • a non-conductive reflective film 91 is provided over the p-type semiconductor layer 50. Also, the non-conductive reflective film 91 may be formed on the n-type semiconductor layer 30 exposed by etching, and on a portion of the electrode 80. A person skilled in the art should understand that it is not absolutely necessary for the non-conductive reflective film 91 to cover the entire area over the semiconductor layers 30 and 50 on the opposite side of the substrate 10.
  • the non-conductive reflective film 91 serves as a reflective film, yet it can preferably be composed of a light-transmitting material, for example, a light-transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 or MgF 2 , in order to avoid the light absorption.
  • a light-transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 or MgF 2 .
  • the non-conductive reflective film 91 When the non-conductive reflective film 91 is composed of a DBR (e.g., DBR composed of the combination of SiO 2 and TiO 2 ), it can reflect a greater amount of light towards the semiconductor layers 30, 40 and 50.
  • the non-conductive reflective film 91 has a double layer structure having a DBR 91a and a dielectric film 91b with a refractive index lower than that of the p-type semiconductor layer 50.
  • the dielectric film 91b having a uniform thickness is first formed before the deposition.
  • the DBR 91a can be prepared in a stable manner, and light reflection can also benefit therefrom.
  • the dielectric film 91b is suitably made of SiO 2 and it has a thickness suitably ranging from 0.2 ⁇ m to 1.0 ⁇ m.
  • each layer is designed to have an optical thickness of one-fourth of a given wavelength, and the number of its combinations is suitably between 4 and 20 pairs.
  • the finger electrode 93 has a height suitably ranging from 0.5 ⁇ m to 4.0 ⁇ m.
  • the finger electrode is thinner than the range, it can lead to an increased operating voltage; and if the finger electrode is thicker than the range, it can affect the stability of the process and increase the material cost.
  • the electrode 92 contributes to reflecting light from the active layer 30 towards the substrate 10 or towards the n-type semiconductor layer 30, it is preferably a conductive reflective film that covers all or almost all of the non-conductive reflective film 91 over the p-type semiconductor layer 50.
  • metals having a high reflectance such as Al or Ag, may be utilized.
  • a finger electrode 93 is extended between the non-conductive reflective film 91 and the p-type semiconductor layer 50, for supplying current (holes, to be precise) from the electrode 92 to the p-type semiconductor layer 50.
  • the introduction of the finger electrode 93 provides a foundation for realizing a flip-chip that has overcome all the problems imposed by the flip-chips in FIG. 1 and FIG. 2 .
  • an electrical connection 94 is prepared in the vertical direction, passing through the non-conductive reflective film 91. Without the finger electrode 93, a number of electrical connections 94 will have to be connected directly to a light-transmitting conductive film 60 that is prepared on almost the entire face of the p-type semiconductor layer 50.
  • the present disclosure forms the finger electrode 93, prior to the formation of the non-conductive reflective film 91 and the electrode 92, on the p-type semiconductor layer 50 or preferably on the light-transmitting conductive film 60 and then performs thermal treatment on the finger electrode 93, such that a stable electrical contact can be created between both.
  • Al or Ag having a high reflectance is a suitable material for the electrode 92, materials such as Cr, Ti, Ni or alloys thereof also may be suitable for the stable electrical contact. Accordingly, by introducing the finger electrode 93, it makes it easy to meet the required design specifications.
  • the finger electrode 93 Al or Ag having a high reflectance can also be used for the finger electrode 93.
  • the light-transmitting conductive film 60 is preferably provided.
  • a p-type GaN has a poor current spreading capability, and when the p-type semiconductor layer 50 is composed of GaN, the light-transmitting conductive film 60 needs to be incorporated in most cases.
  • materials such as ITO, Ni/Au or the like can be used for the light-transmitting conductive film 60.
  • the electrode 92 can also be formed by a mounting face at the package level, following the manufacturing of a chip. It should be noted that all of the components mentioned hitherto will suffice to form the semiconductor light emitting device according to the present disclosure. However, since part of the light generated in the active layer 40 can be absorbed by the finger electrode 93, to avoid this, it is preferable to provide an optical absorption barrier 95 below the finger electrode 93.
  • the optical absorption barrier 95 may only serve to reflect part or all of the light generated in the active layer 40, or may only serve to prevent the current from the finger electrode 93 from flowing to immediately below zone of the finger electrode 93, or may serve both functions.
  • the optical absorption barrier 95 can have a single layer (e.g., SiO 2 ) or a multilayer (e.g., SiO 2 /TiO 2 /SiO 2 ) that is made of a light-transmitting material(s) having a refractive index lower than that of the p-type semiconductor layer 50, or a DBR or any combination of the single layer and the DBR.
  • the optical absorption barrier 95 can be composed of a non-conductive material (e.g., a dielectric film such as SiO x , TiO x or the like). Therefore, although it is not always required to form the optical absorption barrier 95 with a light-transmitting material or with a non-conductive material, the effects thereof can be increased by incorporating a light-transmitting dielectric film.
  • a non-conductive material e.g., a dielectric film such as SiO x , TiO x or the like.
  • FIG. 6 is a view illustrating another example of the semiconductor light emitting device according to the present disclosure, in which a light-transmitting conductive film 60 has openings 96 to enable a non-conductive reflective film 91 to contact with a p-type semiconductor layer 50.
  • the openings 96 can have any shape, including a plurality of islands, bands and the like. Even if the light-transmitting conductive film 60 is composed of most common ITO, it absorbs part of the light generated in the active layer 40. However, the formation of the openings 96 makes it possible to reduce the light absorption by the light-transmitting conductive film 60. While current spreading into the entire p-type semiconductor layer 50 might not be sufficient, it can be complemented by the finger electrode 93. No description will be provided for like reference numerals that have been explained above.
  • FIG. 8 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, which includes an electrical connection 82 passing through the substrate 10, the buffer layer 20 and the n-type semiconductor layer 30, and an electrode 83 on the substrate 10 or the n-type semiconductor layer 30 after the substrate 10 is removed therefrom, i.e. on the n-type semiconductor layer 30 side.
  • This configuration enables to form a non-conductive reflective film 91 and an electrode 92 over the whole of plural semiconductor layers 30 and 50 on the opposite side of the substrate 10.
  • FIG. 9 and FIG. 10 are views illustrating further examples of the semiconductor light emitting device according to the present disclosure.
  • the finger electrode 93 comes in direct contact with the optical absorption barrier 95.
  • FIG. 11 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure. Unlike the example of FIG. 5 , the semiconductor light emitting device does not include the optical absorption barrier 95.
  • FIG. 13 is a view illustrating yet another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 14 is a cross section view taken along line A-A of FIG. 13
  • FIG. 15 is a cross section view taken along line B-B of FIG. 13
  • FIG. 16 is a view illustrating the semiconductor light emitting device of FIG. 13 , without the p-side and n-side electrodes and the non-conductive reflective film.
  • the semiconductor light emitting device 1 includes a substrate 10, a buffer layer 20 grown on the substrate 10, an n-type semiconductor layer 30 grown on the buffer layer 20, an active layer 40 grown on the n-type semiconductor layer 30, generating light via electron-hole recombination, and a p-type semiconductor layer 50 grown on the active layer 40.
  • the substrate 10, which can eventually be removed, is mainly made of sapphire, SiC, Si, GaN or the like, and the buffer layer 20 can be omitted.
  • an n-side electrode 80 may be formed on the n-type semiconductor layer 30 side after the substrate 10 is removed therefrom, or on the conductive substrate 10 side.
  • the positions of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 can be changed with each other.
  • those semiconductor layers are mainly made of GaN.
  • Each of the semiconductor layers 20, 30, 40 and 50 can be configured in a plurality of sub layers.
  • the semiconductor light emitting device may also have an additional semiconductor layer.
  • Portions of the p-type semiconductor layer 50 and the active layer 40 are removed by a mesa etching process to form two n-side contact areas 31 where the n-type semiconductor layer 30 is exposed.
  • An n-side finger electrode 81 is then formed on the n-type semiconductor layer 30 within each n-side contact area 31.
  • the n-side contact areas 31 are extended in parallel with one side C of the semiconductor light emitting device. While the n-side contact areas 31 may be open to one of the lateral directions of the semiconductor light emitting device, they are preferably enclosed and blocked by the active layer 40 and the p-type semiconductor layer 50 without being open to any one of the lateral directions.
  • the number of the n-side contact areas 31 may be increased or decreased, and the array configuration thereof can be varied.
  • the n-side finger electrode 81 preferably includes a branch portion 88 extended lengthily, and a connecting portion 89 formed at one end of the branch portion 88 and having a greater width.
  • the n-side contact area 31 has a smaller width at the part where the branch portion 88 of the n-side finger electrode 81 is disposed and a greater width at the part where the connecting portion 89 of the n-side finger electrode 81 is disposed.
  • Three p-side finger electrodes 93 are formed on the p-type semiconductor layer 50.
  • the p-side finger electrodes 93 are formed in parallel with the n-side finger electrodes 81, in which one of the p-side finger electrodes is arranged between two n-side finger electrodes 81 and the other two p-side finger electrodes are arranged on both sides of the n-side finger electrodes, respectively.
  • the n-side finger electrodes 81 are placed among the p-side finger electrodes 93, respectively, in an alternate manner.
  • the p-side finger electrode 93 preferably includes a branch portion 98 extended lengthily, and a connecting portion 99 formed at one end of the branch portion 98 and having a greater width. Meanwhile, as shown in FIG.
  • the connecting portion 99 of the p-side finger electrode 93 is placed on the opposite side of the connecting portion 89 of the n-side finger electrode 81, when the semiconductor light emitting device is seen from the top. That is to say, the connecting portion 99 of the p-side finger electrode 93 is placed on the left side, while the connecting portion 89 of the n-side finger electrode 81 is placed on the right side.
  • the p-side finger electrode 93 extends along the direction of one side C of the semiconductor light emitting device. For instance, in FIG. 13 and FIG. 16 , it is extended from the left side to the right side.
  • the device can be placed on a mount part (e.g., a sub-mount, a package, or a COB (Chip on Board)) in an upside-down position without inclination.
  • a mount part e.g., a sub-mount, a package, or a COB (Chip on Board)
  • COB Chip on Board
  • a suitable height for the p-side finger electrodes 93 and the n-side finger electrodes 81 ranges from 2 ⁇ m to 3 ⁇ m. If the finger electrodes are thinner than the range, it can lead to an increased operating voltage; and if the finger electrodes are thicker than the range, it can affect the stability of the process and increase the material cost.
  • an optical absorption barrier 95 is formed on the p-type semiconductor layer 50 on which the p-side finger electrode 93 is supposed to be formed.
  • the optical absorption barrier 95 is formed in such a way that it is slightly wider than the p-side finger electrode 93.
  • the light-absorption preventing layer 95 serves to prevent the p-side finger electrode 93 from absorbing light that is generated in the active layer 40.
  • the optical absorption barrier 95 may only serve to reflect part or all of the light generated in the active layer 40, or may only serve to prevent the current from the finger electrode 93 from flowing to immediately below zone of the finger electrode 93, or may serve both functions.
  • the optical absorption barrier 95 can be composed of a single layer (e.g., SiO 2 ) or a multilayer (e.g., SiO 2 /TiO 2 /SiO 2 ) that is made of a light-transmitting material having a refractive index lower than that of the p-type semiconductor layer 50, or a DBR or a combination of the single layer and the DBR.
  • the optical absorption barrier 95 can be composed of a non-conductive material (e.g., a dielectric film such as SiO x , TiO x or the like).
  • a suitable thickness for the optical absorption barrier 95 is between 0.2 ⁇ m and 3.0 ⁇ m.
  • the optical absorption barrier 95 does not always have to be composed of a light-transmitting material or of a non-conductive material, the effects thereof can be increased by incorporating a light-transmitting dielectric material.
  • the light-transmitting conductive film 60 is formed on the p-type semiconductor layer 50.
  • the light-transmitting conductive film 60 is formed on the p-type semiconductor layer 50 in such a way that it covers almost the entire p-type semiconductor layer, except for the n-side contact area 31 that is formed by a mesa etching process.
  • the optical absorption barrier 95 is interposed between the light-transmitting conductive film 60 and the p-type semiconductor layer 50, especially in case of a p-type GaN, where it has a poor current spreading capability.
  • the light-transmitting conductive film 60 should be incorporated in most cases.
  • materials such as ITO, Ni/Au or the like can be used for the light-transmitting conductive film 60.
  • the p-side finger electrode 93 can be formed on the light-transmitting conductive film 60 where the optical absorption barrier 95 is placed.
  • a non-conductive reflective film 91 is formed in such a way that the n-side contact area 31 including the n-side finger electrode 81 and the p-type semiconductor layer 50 including the p-side finger electrode 93 are covered overall.
  • the non-conductive reflective film 91 serves to reflect light from the active layer 40 towards the substrate 10 used for the growth or towards the n-type semiconductor layer 30 if the substrate 10 has been removed.
  • the non-conductive reflective film 91 also covers the exposed side faces of the p-type semiconductor layer 50 and the active layer 40 that connect the upper face of the p-type semiconductor layer 50 and the upper face of the n-side contact area 31.
  • a person skilled in the art should understand that it is not absolutely necessary for the non-conductive reflective film 91 to cover the entire area over the exposed n-type semiconductor layer 30 as a result of etching and the p-type semiconductor layer 50 on the opposite side of the substrate 10.
  • the non-conductive reflective film 91 serves as a reflective film, yet it can preferably be composed of a light-transmitting material, for example, a light-transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 or MgF 2 , in order to avoid the light absorption.
  • the non-conductive reflective film 91 can have a variety of structures, including a single dielectric film, for example, made of a light-transmitting dielectric material such as SiO x , a single DBR, for example, including the combination of SiO 2 and TiO 2 , heterogeneous plural dielectric films and any combination of a dielectric film and a DBR, and can have a thickness ranging from 3 to 8 ⁇ m, for example.
  • the dielectric film having a refractive index lower than that of the p-type semiconductor layer 50 can reflect part of the light having an incidence angle greater than a critical angle towards the substrate 10, the DBR can reflect a greater amount of light towards the substrate 10, and the DBR can also be designed for a specific wavelength such that it can effectively reflect light in response to the wavelength of the light generated.
  • the non-conductive reflective film 91 has a double layer structure including a DBR 91a and a dielectric film 91b.
  • the dielectric film 91b having a uniform thickness is first formed before the deposition such that the DBR 91a can be prepared in a stable manner, and light reflection can also benefit therefrom.
  • a step (step-shape portion) having height difference can be created by a mesa etching process for forming the n-side contact area 31, a component such as the p-side finger electrode 93 or the n-side finger electrode 81 with a step is required, and even after the non-conductive reflective film 91 is formed, it should be subjected to a boring process to make an opening in it as described in detail below. Thus, special attention should be paid during the formation of the dielectric film 91b.
  • the dielectric film 91b is suitably made of SiO 2 , and it preferably has a thickness between 0.2 ⁇ m and 1.0 ⁇ m. If the dielectric film 91b is thinner than the range, it is not enough to fully cover the n-side finger electrode 81 and p-side finger electrode 93 having a height ranging from 2 ⁇ m to 3 ⁇ m; and if the dielectric film 91b is thicker than the range, the subsequent boring process can be difficult to perform.
  • the dielectric film 91b may be thicker than the following DBR 91a. Moreover, it is necessary to form the dielectric film 91b by a more suitable method for ensuring the reliability of the device.
  • the dielectric film 91b made of SiO 2 is preferably formed by CVD (Chemical Vapor Deposition) and in particular by PECVD (Plasma Enhanced CVD).
  • CVD Chemical Vapor Deposition
  • PECVD Pullasma Enhanced CVD
  • the dielectric film 91b when the dielectric film 91b is formed by E-beam evaporation, the dielectric film 91b can be formed more thinly on the lateral faces of the p-side finger electrode 93 and n-side finger electrode 81 having the step, or on the tilted step face generated by mesa etching. Meanwhile, if a thinner dielectric film 91b is formed on the step faces, and especially if the p-side finger electrode 93 and the n-side finger electrode 81 are disposed below the p-side electrode 92 and the n-side electrode 80 respectively as described below, a short might occur between the electrodes. Therefore, in order to ensure insulation, the dielectric film 91b is preferably formed by CVD. In this way, it is possible to secure the reliability of the semiconductor light emitting device, while ensuring those functions as the non-conductive reflective film 91.
  • the DBR 91a is formed on the dielectric film 91b and composes the non-conductive reflective film 91, together with the dielectric film 91b.
  • the DBR 91a having a repeatedly laminated structure composed of the combination of TiO 2 /SiO 2 is preferably formed by PVD, and in particular by E-beam evaporation, sputtering or thermal evaporation.
  • each layer is designed to have an optical thickness of one fourth of a given wavelength, and the number of its combinations is suitably between 4 and 20 pairs. If the number of pairs is smaller than the range, the reflectivity of the DBR 91a may be degraded; and if the number of pairs is larger than the range, the DBR 91a may become excessively thick.
  • the p-side finger electrode 93 and the n-side finger electrode 81 are fully covered by the non-conductive reflective film 91.
  • openings passing through the non-conductive reflective film 91 are formed, and the openings are then filled with an electrode material to form electrical connections 94 and 82. These openings are preferably formed by dry etching or wet etching or both.
  • the electrical connections 94 and 82 are preferably formed on the connecting parts 99 and 89 of the p-side finger electrode 93 and the n-side finger electrode 81, respectively.
  • a number of electrical connections 94 should be formed and connected directly to the light-transmitting conductive film 60 that is prepared on almost the entire face of the p-type semiconductor layer 50.
  • a number of electrical connections 82 should be formed and connected directly to the n-side contact area 31.
  • the n-side finger electrode 81 is formed on the n-side contact area 31, and the p-side finger electrode 93 is formed either on the p-type semiconductor layer 50 or preferably on the light-transmitting conductive film 60, and these electrodes are then subjected to heat treatment, thereby making a stable electrical contact between both sides.
  • the p-side electrode 92 and the n-side electrode 80 are formed on the non-conductive reflective film 91.
  • the p-side electrode 92 and the n-side electrode 80 contribute to reflecting light from the active layer 40 towards the substrate 10, those electrodes are formed over a broad area to be able to cover the entire or almost the entire upper face of the non-conductive reflective film 91, thereby serving as a conductive reflective film.
  • the p-side electrode 92 and the n-side electrode 80 are preferably formed at a distance from each other on the non-conductive reflective film 91.
  • the p-side electrode 92 or the n-side electrode 80 may suitably be made of a material having an acceptable reflectance (e.g., Al, Ag or the like), it is preferably made of the combination of the high-reflectance material (e.g., Al, Ag or the like) and Cr, Ti, Ni, Au or any alloy thereof for obtaining a stable electrical contact.
  • the high-reflectance material e.g., Al, Ag or the like
  • the p-side electrode 92 and the n-side electrode 80 serve to supply current to the p-side finger electrode 93 and the n-side finger electrode 81 to connect the semiconductor light emitting device with external equipment; and, by occupying a broad area, to reflect the light from the active layer 40 and/or emit the heat. Therefore, forming both the p-side electrode 92 and the n-side electrode 81 on the non-conductive reflective film 91 makes it possible to minimize the height difference between the p-side electrode 92 and the n-side electrode 80, and is advantageous when the semiconductor light emitting device according to the present disclosure is bonded to a mount part (e.g., a sub-mount, a package or a COB). This advantage becomes more apparent especially when the eutectic bonding method is applied.
  • a mount part e.g., a sub-mount, a package or a COB
  • both the p-side finger electrode 93 and the n-side finger electrode 81 are placed beneath the non-conductive reflective film 91.
  • the p-side finger electrode 93 extends lengthily passing below the n-side electrode 80 placed directly on the non-conductive reflective film 91
  • the n-side finger electrode 81 extends lengthily passing below the p-side electrode 92 placed directly on the non-conductive reflective film 91.
  • the non-conductive reflective film 91 exists between the p-side electrode 92 and the p-side finger electrode 93, and between the n-side electrode 80 and the n-side finger electrode 81, a short between the electrodes 92 and 80 and the finger electrodes 93 and 81 can be prevented. Further, by introducing the p-side finger electrode 93 and the n-side finger electrode 81 as described above into the formation of a flip-chip, it becomes possible to supply current to the semiconductor layer areas of interest, without restriction.
  • the p-side electrode 92, the n-side electrode 80, the p-side finger electrode 93 and the n-side finger electrode 81 are composed of a plurality of metal layers, respectively.
  • the bottom layer thereof should have a high bonding strength with the light-transmitting conductive film 60.
  • materials such as Cr or Ti are mainly used, but other materials such as Ni, Ti or TiW can also be used as there are no particular limitations regarding this matter.
  • Al or Ag having a high reflectance can also be employed for the p-side finger electrode 93 and the n-side finger electrode 81.
  • the p-side electrode 92 and the n-side electrode 80 Au is used for their top layers for wire bonding or for the connection with an external electrode. Meanwhile, in order to reduce the amount of Au used and to complement a relatively low hardness of Au, other material such as Ni, Ti, TiW or W, depending on the specifications required, or Al or Ag, when a high reflectance is required, can be employed between the bottom layer and the top layer. In the present disclosure, since the p-side finger electrode 93 and the n-side finger electrode 81 need to be electrically connected to the electrical connections 94 and 82, Au could be considered for use as the top layers for finger electrodes 93 and 81.
  • other material such as Ni, Ti, W, TiW, Cr, Pd or Mo can be employed in place of Au to form the top layers of the finger electrodes. In this way, the bonding strength between the top layers and the non-conductive reflective film 91 to be deposited on the top layers is retained and the reliability can thus be improved.
  • those metals mentioned above are fully capable of functioning as a diffusion barrier during the formation of an opening in the non-conductive reflective film 91 to create the electrical connection 94, which can be helpful for ensuring the stability of the subsequent processes and the electrical connections 94 and 82.
  • FIG. 17 is a view illustrating yet another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 18 is a cross section view taken along line D-D of FIG. 17
  • FIG. 19 is a cross section view taken along line E-E of FIG. 17 .
  • a non-conductive reflective film 91 further includes, in addition to a dielectric film 91b and a DBR 91a, a clad film 91f to be formed on the DBR 91a.
  • a large portion of light generated in the active layer 40 is reflected by the dielectric film 91b and the DBR 91a towards an n-side semiconductor layer 30, part of the light is trapped inside the dielectric film 91b and the DBR 91a as they also have a certain thickness, or emitted through the lateral faces of the dielectric film 91b and the DBR 91a.
  • the inventors tried to analyze the relation among the dielectric film 91b, the DBR 91a and the clad film 91f, from the perspective of an optical waveguide.
  • the optical waveguide is a structure that encloses a propagation part of light by a material having a refractive index lower than that of the propagation part of light and guides the light utilizing total reflection.
  • the dielectric film 91b and the clad film 91f can be regarded as part of the structure that encloses the propagation part.
  • the DBR 91a is composed of SiO 2 /TiO 2 , with SiO 2 having a refractive index of 1.46 and TiO 2 having a refractive index of 2.4, an effective refractive index (which denotes an equivalent refractive index of light that can travel in a waveguide that is made of materials having different refractive indices, and has a value between 1.46 and 2.4) of the DBR 91a is higher than that of the dielectric film 91b composed of SiO 2 .
  • the clad film 91f is also composed of a material having an effective refractive index lower than that of the DBR 91a.
  • the clad film 91f has a thickness which desirably ranges from ⁇ /4n to 3.0 ⁇ m, in which ⁇ denotes a wavelength of the light generated in the active layer 40, and n denotes a refractive index of a material composing the clad film 91f.
  • the clad film 91f can be composed of a dielectric such as SiO 2 having a refractive index of 1.46.
  • ⁇ is 450 nm (4500 ⁇ )
  • the top layer of the DBR 91a made of multiple pairs of SiO 2 /TiO 2 can be composed of a SiO 2 layer having a thickness of ⁇ /4n
  • the clad film 91f is thicker than ⁇ /4n to be distinguished from the top layer of the DBR 91a that is placed beneath the clad film 91f.
  • the top layer of the DBR 91a it is not desirable for the top layer of the DBR 91a to be too thick (e.g., 3 ⁇ m or more), imposing a burden on the subsequent boring process and only increasing the material cost without contributing to the improvement of the efficiency, it is not impossible, depending on the case, to make the top layer as thick as 3.0 ⁇ m or more.
  • the DBR 91a When the DBR 91a comes in direct contact with the p-side electrode 92 and the n-side electrode 80, part of the light travelling through the DBR 91a may be affected by the p-side electrode 92 and the n-side electrode 80 and then absorbed.
  • interposing the clad film 91f having a refractive index lower than that of the DBR 91a between the p- and n-side electrodes (92, 80) and the DBR 91a can minimize the partial absorption of the light traveling through the DBR 91a by the p-side electrode 92 and the n-side electrode 80, thereby increasing the efficiency of light extraction.
  • the clad film 91f should generally have at least a thickness corresponding to the wavelength of light to achieve the effect described above, and therefore it preferably has a thickness of at least ⁇ /4n. Meanwhile, if there is a big difference between the refractive index of the DBR 91a and the refractive index of the clad film 91f, the DBR 91a may restrict light more strongly such that a thinner clad film 91f could be used. However, if the difference between the refractive indices is small, the clad film 91f needs to be sufficiently thick to obtain the effect described above.
  • the thickness of the clad film 91f is determined with full consideration of a difference between the refractive index of a material constituting the clad film 91f and the effective refractive index of the DBR 91a. For instance, if the clad film 91f is composed of SiO 2 and the DBR 91a is composed of SiO 2 /TiO 2 , a suitable thickness for the clad film 91f will be at least 0.3 ⁇ m to be distinguished from the top layer of the DBR 91a composed of SiO 2 . On the other hand, the upper limit of the thickness of the clad film 91f is preferably between 1 ⁇ m and 3 ⁇ m, not to impose any burden on the subsequent boring process.
  • the clad film 91f is not particularly limited as long as its refractive index is lower than the effective refractive index of the DBR 91a, and can be composed of a metal oxide such as Al 2 O 3 , a dielectric film such as SiO 2 or SiON, or other material such as MaF or CaF. If a difference in the refractive indices is small, the clad film should be made thicker to obtain the desired effect. Also, in case of using SiO 2 for the clad film, it is possible to use SiO 2 having a refractive index lower than 1.46 to increase the efficiency.
  • the dielectric film 91b can be omitted from the non-conductive reflective film.
  • the non-conductive reflective film 91 may have a TiO 2 dielectric film in place of the DBR 91a.
  • the clad film 91f can be omitted from the non-conductive reflective film, if the DBR 91a includes a SiO 2 layer on the top thereof.
  • the non-conductive reflective film 91 which is composed of the DBR 91a having a high effective reflectance, and the dielectric film 91b and the clad film 91f, each having a low reflectance, disposed on the top and bottom of the DBR 91a, respectively, serves as an optical waveguide, and preferably has an overall thickness ranging from of 3 ⁇ m to 8 ⁇ m. Also, the non-conductive reflective film 91 preferably has an inclined face 91m at the edge. This inclined face 91m can be formed, for example, by a dry etching process.
  • the light rays that are incident on the non-conductive reflective film 91 that serves as an optical waveguide are well reflected towards the substrate 10, but some light rays including those that are incident on the non-conductive reflective film 91 at an oblique angle are not reflected towards the substrate 10 and instead can be trapped inside the DBR 91a that serves as a propagation part, and then can be propagated towards the lateral face.
  • the light rays propagated towards the lateral surface of the DBR 91a are either emitted to the outside or reflected towards the substrate 10, at the inclined face 91m of the edge of the non-conductive reflective film 91.
  • the inclined face 91m at the edge of the non-conductive reflective film 91 serves as a corner reflector and contributes to the improved luminance of the semiconductor light emitting device.
  • the inclined face 91m is suitably at an angle ranging from 50 to 70 degrees, to facilitate the light reflection towards the substrate 10.
  • the inclined face 91m can easily be formed by wet etching or dry etching, or both.
  • those semiconductor light emitting devices 3, shown in FIG. 20 and FIG. 21 for explaining the manufacturing process are in a state where none of the p-side electrode 92, n-side electrode 80 and bonding pad 97 is formed.
  • a semiconductor light emitting device is first prepared in a wafer form including a plurality of semiconductor light emitting devices, and then divided into individual semiconductor light emitting devices by cutting, such as breaking, sawing, or scribing-and-breaking.
  • the scribing process employs a laser and can be performed by focusing the laser onto the substrate side including the surface and the interior of the substrate of the semiconductor light emitting device.
  • the semiconductor light emitting device 3 is preliminarily cut along the boundary G of the edge of the semiconductor light device 3, i.e., along the boundary G between the semiconductor light emitting device 3 and another neighboring semiconductor light emitting device 3.
  • the preliminarily cut semiconductor light emitting devices are completely divided into individual semiconductor light emitting devices through the breaking process that is performed following the scribing process.
  • the breaking process is performed by applying an external force along the boundary G between the semiconductor light emitting device 3 and another neighboring semiconductor light emitting device 3, for example, in the direction of the substrate 10 indicated by an arrow F in FIG. 20 , or in the opposite direction thereof.
  • the substrate 10 and the semiconductor layers 20, 30 40 and 50 which are crystalline, can be cut precisely along the boundary G; while the non-conductive reflective film 91 over the p-type semiconductor layer 50, which is non-crystalline, cannot be cut precisely along the boundary G and, in the areas around the edge of the non-conductive reflective film 91, it is likely to sustain damage such as crack generation thereto.
  • the damage of the areas around the edge of the non-conductive reflective film 91 may lead to poor yields due to those appearance defects.
  • a plurality of semiconductor light emitting devices is prepared in a wafer form, and then, prior to the scribing and braking processes using a laser for dividing the semiconductor light emitting devices into individual ones, a certain area H of the non-conductive reflective film 91 around the boundary G between a semiconductor light emitting device and another neighboring semiconductor light emitting device is eliminated.
  • the certain area H of the non-conductive reflective film 91 to be eliminated along the boundary G of the semiconductor light emitting device 3 corresponds to an edge area of the non-conductive reflective film 91.
  • the elimination of a certain area H of the non-conductive reflective film 91 around the boundary G can also indicate that, before the semiconductor light emitting devices are divided into individual ones, the non-conductive reflective film 91 of one semiconductor light emitting device and the non-conductive reflective film 91 of another neighboring semiconductor light emitting device are spaced apart from each other. With a part of the areas of the edge of the non-conductive reflective film 91 being eliminated, even if the subsequent scribing and breaking processes may be performed using a laser, the appearance defect caused by the damaged edge of the non-conductive reflective film 91 of each semiconductor light emitting device can be avoided, thereby increasing yields.
  • the elimination of a certain area H of the non-conductive reflective film 91 can be carried out by dry etching, and it should be performed prior to the breaking process in the overall semiconductor manufacturing process.
  • the openings passing through the non-conductive reflective film 91 to form electrical connections 94 and 82 are formed by dry etching, it is preferable to perform the elimination at the same time.
  • the inclined face 91m serving as a corner reflector can be obtained by a separate etching process, the inclined face 91m can be formed simultaneously in a process of eliminating the edge area of the non-conductive reflective film 91 to avoid damage, by etching the edge portion of the non-conductive reflective film 91 of an individual semiconductor light emitting device.
  • a bonding pad 97 can be present on the p-side electrode 92 and on the n-side electrode 80 respectively, as a part of each of the p-side electrode 92 and the n-side electrode 80.
  • the top face of the bonding pad 97 on the p-side electrode 92 has the same height as the top face of the bonding pad 97 on the n-side electrode 80. That is to say, the top face of the bonding pad 97 on the p-side electrode 92 and the top face of the bonding pad 97 on the n-side electrode 80 are on the same plane.
  • those bonding pads 97 allow the p-side electrode 92 and the n-side electrode 80 to have an equal final height to thus avoid any tilting on the mount part, provide a broad and planar coupling face to thus obtain an excellent bonding strength, and dissipates the heat from the inside of the semiconductor light emitting device to the outside.
  • a plurality of bonding pads 97 can be present on the p-side electrode 92 and on the n-side electrode 80, respectively, and the plurality of bonding pads 97 are preferably formed on the portions where the n-side finger electrodes 81 and the p-side finger electrodes 93 are not overlapped, i.e., between each of the n-side finger electrodes 81 and the p-side finger electrodes 93.
  • the bonding pads 97 are formed on the areas of the p-side electrode 92 and on the n-side electrode 80, except on the p-side finger electrodes 93 corresponding to the upper most protruded portion and on the n-side finger electrodes 81 corresponding to the lower most recessed portion.
  • the bonding pad 97 can have a double layer structure including an underlying spacer layer 97a and a bonding layer 97b overlying the spacer layer 97a, and have a total thickness ranging from 5 ⁇ m to 6 ⁇ m, for example.
  • the spacer layer 97a may be composed of a metal layer including Ni, Cu or a combination thereof
  • the bonding layer 97b may be composed of a eutectic bonding layer including a Ni/Sn, Ag/Sn/Cu, Ag/Sn, Cu/Sn or Au/Sn combination and having a thickness of about several ⁇ m.
  • the spacer layer 97a can serve as a wetting layer and as a diffusion barrier for a solder used in the eutectic bonding, and can also reduce the cost burden as compared with a case where the bonding pad 97 is entirely formed of a eutectic bonding layer 97b containing expensive Au.
  • the bonding pads 97 are preferably formed to be taller than the most protruded portion of the p- and n-side electrodes 92 and 80, namely, the height of the upper portion of the p-side finger electrode, by 1 to 3 ⁇ m.
  • the spacer layer 97a and the bonding layer 97b can be formed by various methods, such as plating, E-beam evaporation, thermal evaporation or the like.
  • all areas of the n-type semiconductor layer 30, except the n-side contact area 31, are preferably covered with the active layer 40 and the p-type semiconductor layer 50. That is to say, for the semiconductor light emitting device 100, the target etching area is limited to the n-side contact area 31, and there is no other area including the edges to be etched. Those lateral faces around the semiconductor light emitting device 100 are all cut faces obtained by the scribing-and-braking process or the like. As such, the area of the active layer 40 generating light increases and the light extraction efficiency is thus improved.
  • the step faces produced from the etching process are minimized; namely, those step faces are limited to the exposed lateral faces of the active layer 40 and the p-type semiconductor layer 50 that connect the top face of the p-type semiconductor layer 50 with the top face of the n-side contact area 31.
  • These exposed lateral faces of the active layer 40 and the p-type semiconductor layer 50 are the portions where it is hard, in particular, to deposit the DBR 91a constituting the non-conductive reflective film 91 during the formation of the non-conductive reflective film 91. Consequently, the DBR 91a on the exposed lateral faces of the active layer 40 and the p-type semiconductor layer 50 may have relatively lower reflection efficiency.
  • FIG. 22 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure
  • FIG. 23 is a cross section view taken along line A-A' of FIG. 22 .
  • the first feature of this embodiment is that finger electrodes 93 on the p-type semiconductor layer 50 are separated from each other, but after each electrical connection is set, they are then connected to each other by an electrode 92.
  • the electrode 92 serves to supply current to those finger electrodes 93, and is capable of reflecting light, dissipating heat and/or connecting the device to outside.
  • the finger electrodes 93 are all separated, separating at least two finger electrodes 93 can remove a branched part that connects those finger electrodes 93 with each other, thereby making it possible to reduce an unequal height on top of the device.
  • the second feature of this embodiment is that the finger electrodes 93 are stretched out along one lateral (C) direction of the device. For instance, in FIG. 22 , they are stretched out towards the electrode 80 from the electrode 92. With these long stretched finger electrodes 93, the device may be placed without leaning when it is overturned on a mount part (e.g., a sub-mount, a package, or a COB (Chip on Board)).
  • a mount part e.g., a sub-mount, a package, or a COB (Chip on Board)
  • the finger electrodes 93 it is preferable to have the finger electrodes 93 as long as possible within the marginal space in the construction of a device.
  • the finger electrodes 93 may be extended farther, past the electrode 80.
  • the third feature of this embodiment is that the electrode 80 is disposed above the non-conductive reflective film 91.
  • the electrode 80 is connected to a finger electrode 81 through an electrical connection 82.
  • the electrode 80 has the same functions as the electrode 92.
  • the side where the electrode 80 is placed has an increased height as compared with FIG. 3 , such that a height difference between the sides of the electrode 92 and the electrode 80 is reduced, being advantageous for coupling the device with the mount part.
  • the fourth feature of this embodiment is that those finger electrodes 81 can be arranged in a similar way as those finger electrodes 93.
  • the fifth feature of this embodiment is that an auxiliary heat-dissipating pad 97 is provided.
  • the auxiliary heat-dissipating pad 97 serves to dissipate heat from inside the device to outside and/or to reflect light, while it also electrically isolates the electrode 92 and/or the electrode 80, thereby preventing any electrical contact between the electrode 92 and the electrode 80. Further, this auxiliary heat-dissipating pad 97 may be used for bonding.
  • FIG. 24 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which auxiliary heat-dissipating pads 121, 122, 123 and 124 are present between the electrode 92 and the electrode 80.
  • the auxiliary heat-dissipating pads 121, 122, 123 and 124 are interposed between the finger electrodes 92, or between a finger electrode 92 and a corresponding finger electrode 81. Without the auxiliary heat-dissipating pads 121, 122, 123 and 124 formed on the finger electrodes 92, the front face of the device and the mount part are bonded better during bonding (e.g.
  • auxiliary heat-dissipating pads 121 and 122 are separated from the electrodes 92 and 80, while the auxiliary heat-dissipating pad 123 is connected to the electrode 92 and the auxiliary heat-dissipating pad 124 is connected to the electrode 80.
  • FIG. 25 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the finger electrode 93 is extended below the electrode 80 (past the reference line B).
  • the finger electrode 93 is extended below the electrode 80 (past the reference line B).
  • a flip-chip is constructed in such a way that current can be supplied without restrictions to the device area needed.
  • the electrical connection 94 on the left hand side may be omitted.
  • the electrode 92 also serves as an auxiliary heat-dissipating pad 97 (see FIG. 22 ).
  • FIG. 26 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the non-conductive reflective film 91 is made up of a multi-layer dielectric film 91c, 91d and 91e.
  • the non-conductive reflective film 91 can include a dielectric film 91c made of SiO 2 , a dielectric film 91d made of TiO 2 , and a dielectric film 91e made of SiO 2 , to serve as a reflective film.
  • the non-conductive reflective film 91 is designed to include a DBR structure.
  • the manufacture of the semiconductor light emitting device according to the present disclosure requires a structure such as finger electrodes 93 or finger electrodes 91, and a process for forming electrical connections 94 or electrical connections 82 even after the non-conductive reflective film 91 has been formed, extra caution should be given particularly for forming the dielectric film 91c made of SiO 2 as it can affect the reliability of the device (e.g. leakage current may occur) after the semiconductor light emitting device is finished.
  • the dielectric film 91c should have a thickness greater than those of the dielectric films 91d and 91e that come after the dielectric film 91c.
  • the dielectric film 91c needs to be prepared in a more appropriate way for ensuring the reliability of the device.
  • the dielectric film 91c made of SiO 2 can be obtained by CVD (Chemical Vapor Deposition), but most of all (preferably) PECVD (Plasma Enhanced CVD); the repeating, laminated structure of dielectric film 91d and the dielectric film 91e made of TiO 2 /SiO 2 DBR can be obtained by PVD (Physical Vapor Deposition), but most of all (preferably) electron beam evaporation, sputtering or thermal evaporation, thereby ensuring the reliability of the semiconductor light emitting device according to the present disclosure as well as the performances as the non-conductive reflective film 91.
  • CVD is known to prevail over PVD, especially electron beam evaporation.
  • FIG. 27 is an enlarged view of the area where an electrical connection is formed, which shows the light-transmitting conductive film 60, the finger electrode 93 disposed on the light-transmitting conductive film 60, the non-conductive reflective film 91 encompassing the finger electrode 93, the electrode 92, and the electrical connection 94 connecting the finger electrode 93 with the electrode 92.
  • a plurality of metal layers is provided for forming electrodes, finger electrodes and bonding pads in the semiconductor light emitting device.
  • the bottom layer should have an acceptable bonding strength with the light-transmitting conductive film 60. It is mainly made of a material such as Cr or Ti, but Ni, Ti, TiW or the like can also be used since its material is not particularly limited.
  • the top layer for wire bonding or for the connection with an external electrode Au is typically used. Meanwhile, in order to reduce the amount of Au used and to complement a relatively low hardness of Au, it is possible to employ, between the bottom layer and the top layer, other materials such as Ni, Ti, TiW or W, depending on the specifications required, or Al or Ag, when a high reflectance is required. In the present disclosure, however, since the finger electrode 93 needs to be electrically connected to the electrical connection 94, Au can be considered for use as the top layer for finger electrode 93.
  • the inventors have learned that it is not appropriate to use Au for the top layer for the finger electrode 93, because the Au gets easily peeled off due to a weak bonding strength between the Au and the non-conductive reflective film 91 at the time of deposition of the non-conductive reflective film 91 onto the Au top layer.
  • the top layer of the finger electrode can be formed of other materials such as Ni, Ti, W, TiW, Cr, Pd or Mo, in place of Au. In this way, the bonding strength between the top layer and the non-conductive reflective film 91 to be deposited on the top layer is retained and the reliability of the device can thus be improved.
  • those metals mentioned above are fully capable of acting as a barrier during the formation of an opening in the non-conductive reflective film 91 for the electrical connection 94, which can then be useful for ensuring the stability of the subsequent processes and the electrical connections.
  • FIG. 28 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, which further includes phosphors 220.
  • the phosphor 220 in combination with an epoxy resin, forms an encapsulant 230.
  • the semiconductor light emitting device is placed at a reflective cup 210.
  • the electrodes 80 and 92 are electrically connected to outside, by means of a conductive adhesive 240 and 250, respectively.
  • the phosphor 220 can be coated conformally, or can be applied directly, or can be disposed at a certain distance away from the semiconductor light emitting device.
  • the light emitted from the active layer 40 is absorbed by the phosphor 220 and converted to a light L1 of longer or shorter wavelength before traveling to outside, but part of the light L2 remains within the semiconductor light emitting device or is reflected from the reflective cup 210 and then returns into the semiconductor light emitting device where it is destroyed, thereby impairing the efficiency of the semiconductor light emitting device.
  • the non-conductive reflective film 91 has a DBR 91-1
  • the reflection efficiency of the DBR 91-1 depends on the wavelength of the light.
  • the light emitting from the active layer 40 is blue light having a wavelength of 450 nm
  • the DBR 91-1 is made of SiO 2 /FiO 2 combination, where SiO 2 has a refractive index n 1 and TiO 2 has a wavelength of n 2
  • the thickness of SiO 2 is adapted by 450 nm/4n 1
  • the thickness of TiO 2 is adapted by 450 nm/4n 2 .
  • the phosphor 220 when the phosphor 220 is a yellow phosphor (e.g.: YAG:Ce, (Sr,Ca,Ba) 2 SiO 4 :Eu), the phosphor 220 will have a wavelength of 560 nm, and as a result thereof, the efficiency of the DBR 91-1 adapted to the blue light will be substantially lowered. This problem can be relieved by introducing more DBRs 91-2 into the non-conductive reflective film 91, which are adapted to the wavelength of the phosphor 220 present in the semiconductor light emitting device.
  • the DBR 91-1 is designed based on ⁇ Active /4n 1 , ⁇ Active /4n 2 (wherein, ⁇ Active is the wavelength of the active layer 40, and n 1 and n 2 are refractive indexes of the DBR 91-1 materials), and the DBR 91-2 is designed based on ⁇ Phosphor /4n 1 , ⁇ Phosphor /4n 2 (wherein, ⁇ Phosphor is the wavelength of the phosphor 220, and n 1 and n 2 are refractive indexes of the DBR 91-2 materials).
  • the expression "is designed based on” herein is not intended to mean that the DBR 91-1 must have a thickness following this criteria.
  • the DBR 91-1 may have a larger or smaller thickness than the reference thickness, when an occasion arises. Nevertheless, such an occasion does not change the fact that the DBR 91-1 should be designed based on the ⁇ Active /4n 1 , ⁇ Active /4n 2 .
  • additional DBR 91-2 may also be added accordingly.
  • the material for the DBR 91-1 and the material for the DBR 91-2 may be partially or entirely different from each other.
  • the DBR 91-1 and the DBR 91-2 comprising from 2 to 10 periods can be ready for any desired wavelength. However, this does not necessarily imply that any DBR comprising less or more periods cannot serve its performance.
  • FIG. 29 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, which further includes a DBR 91-3.
  • DBR 91-2 is designed based on ⁇ Phosphor1 /4n 1 , ⁇ Phosphor2 /4n 2
  • the DBR 91-3 is designed based on ⁇ Phosphor2 /4n 1 , ⁇ Phosphor2 /4n 2 .
  • arranging these DBRs in the non-conductive reflective film 91 becomes an issue.
  • Various arrangements can be possible, e.g., they can be arranged from the p-type semiconductor layer 50 in order of longest wavelength to shortest, or vice versa. Also, more generally, it is possible to design DBRs of several wavelength bands, taking the light from the active layer 40 and/or the wavelength of the phosphor into consideration. If a DBR designed for a relatively shorter wavelength is arranged closer to the p-type semiconductor layer 50, the light of this shorter wavelength may be farther from the finger electrode 93 and the electrode 92, and thus, the absorption of the light by the finger electrode 93 and the electrode 92 is virtually prevented.
  • Another possible advantage is that if a DBR designed for a relatively longer wavelength is arranged closer to the p-type semiconductor layer 50, the reflectivity for the light which does not enter in a direction perpendicular to the DBR but enters at an angle with respect to the DBR would be increased.
  • DBR designed for the shortest wavelength it is also possible to arrange a DBR designed for the shortest wavelength to be closest to or farthest from the p-type semiconductor 50 and then put the other two DBRs to be intersected or mixed, or in any diverse way if necessary.
  • the non-conductive reflective film 91 may become too thick if DBRs of different wavelengths are provided.
  • DBRs can be designed based on (( ⁇ Phosphor1 + ⁇ Phosphor2 )/2) / 4n 1 , (( ⁇ Phosphor1 + ⁇ Phosphor2 )/2) / 4n 2 .
  • a DBR can have the above design for 580 nm and 600 nm because of a smaller difference in the wavelength.
  • a DBR can be designed for thicker wavelengths 580 nm and 600 nm together, which in turn enables to reduce the overall thickness of the non-conductive reflective film 91.
  • DBRs when one designs DBRs, DBRs can end up being slightly longer than ⁇ , that is, slightly thicker than the reference, instead of being adapted to the precise sizes of ⁇ /4n 1 , ⁇ /4n 2 .
  • the thickness of the non-conductive reflective film 91 may increase, and if applicable, it can become difficult to form the electrical connection 94.
  • ⁇ /4n 1 and ⁇ /4n 2 instead of increasing both thicknesses ⁇ /4n 1 and ⁇ /4n 2 , only the thickness ⁇ /4n 2 may be increased. Even if both thicknesses ⁇ /4n 1 and ⁇ /4n 2 are increased, it is still possible to make the thickness ⁇ /4n 2 relatively larger.
  • FIG. 30 graphically shows reflectivity as a function of wavelengths of aluminum (Al), silver (Ag) and gold (Au).
  • Al aluminum
  • Ag silver
  • Au gold
  • a DBR adapted to the red light
  • Au may be included in the bottom layer or a lower area of the electrode 80, finger electrode 81 or finger electrode 93.
  • the term "lower area” herein is intended to mean that other metal such as Cr or Ti that has a relatively better adhesive strength than Au can be added, in a very small thickness, to the bottom layer, while still retaining the reflective performance of Au. It should be understood that the technical ideas presented in FIG. 28 to FIG. 30 are also applicable even if the finger electrodes 93 are not available, and that the present disclosure is not to be regarded simply as a combination of the number of features suggested in this disclosure.
  • the auxiliary heat-dissipating pad 97 illustrated in FIG. 22 and FIG. 24 as well as those auxiliary heat-dissipating pads 121, 122, 123 and 124 can also be configured as described above.
  • the Au-containing electrode 92, auxiliary heat-dissipating pad 97, auxiliary heat-dissipating pads 121, 122, 123 and 124, finger electrode 93, electrode 80 and finger electrode 81 on the opposite side of the p-type semiconductor layer 50 are referred to as reflective metal layers.
  • FIG. 31 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device includes a substrate 10, a buffer layer 20 grown on the substrate 10, an n-type semiconductor layer 30 grown on the buffer layer 20, an active layer 40 grown on the n-type semiconductor layer 30, generating light via electron-hole recombination, and a p-type semiconductor layer 50 grown on the active layer 40.
  • the semiconductor light emitting device further includes a light-transmitting conductive film 60 formed on the p-type semiconductor layer 50, a non-conductive reflective film 91 formed on the light-transmitting conductive film 60 to reflect light from the active layer 40 towards the substrate 10 used for growth or towards the n-type semiconductor layer 30 if the substrate 10 has been removed, an electrode 80 for providing electrons to the n-type semiconductor layer 30, an electrode 92 for providing holes to the p-type semiconductor layer 50, and a finger electrode 81 stretched into the n-type semiconductor layer 30 and electrically connected to the electrode 80.
  • the semiconductor light emitting device further includes an electrical connection 94 passing through the non-conductive reflective film 91 to connect the electrode 92 and the light-transmitting conductive film 60, and another non-conductive reflective film 191 interposed between the p-type semiconductor layer 50 and the light-transmitting conductive film 60 below the electrical connection 94 to reflect light from the active layer 40 towards to the n-type semiconductor layer 30.
  • the non-conductive reflective film 91 can be formed on the exposed n-type semiconductor layer 30 after being etched and on a part of the electrode 80.
  • the presence of the non-conductive reflective film 191 between the p-type semiconductor layer 50 and the light-transmitting conductive film 60 below the electrical connection 94 prevents the non-conductive reflective film 91 from covering the electrical connection 94, such that it is highly possible that the optical efficiency may not be decreased, but rather can be improved.
  • the non-conductive reflective film 91 and the non-conductive reflective film 191 are preferably composed of a light-transmitting material, for example, a light-transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 or MgF 2 , in order to avoid the absorption of light.
  • a light-transmitting dielectric material such as SiO x , TiO x , Ta 2 O 5 or MgF 2
  • their refractive indexes are lower than that of the p-type semiconductor layer 50 (e.g., GaN) such that they can reflect part of the light having an incidence angle greater than a critical angle towards the semiconductor layers 30, 40 and 50.
  • the non-conductive reflective film 91 and the non-conductive reflective film 191 can be made up of a DBR. In such case, they are able to reflect a greater amount of light towards the semiconductor layers 30, 40 and 50.
  • the light-transmitting conductive film 60 serves to improve the current diffusion capacity, especially when the p-type semiconductor layer 50 is composed of GaN. As such, it can be made of a material such as ITO, Ni/Au or the like.
  • FIG. 32 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which a finger electrode 93 is stretched out between the non-conductive reflective film 91 and the light-transmitting conductive film 60, for facilitating the supply of current (hole, to be more accurate) to the p-type semiconductor layer 50 from the electrode 92.
  • the finger electrode 93 is electrically connected to the electrode 92, via the electrical connection 94 that passes through the non-conductive reflective film 91 in the vertical direction. Without the finger electrode 93, a number of electrical connections 94 will have to be formed to connect the electrode 92 directly to the light-transmitting conductive film 60 formed on almost the entire face of the p-type semiconductor layer 50. In such case, however, it is not easy to obtain an acceptable electrical contact between the electrode 92 and the light-transmitting conductive film 60, and problems may occur during the manufacturing process.
  • FIG. 33 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the non-conductive reflective film 191 is stretched out between the light-transmitting conductive film 60 and the p-type semiconductor layer 50 to the extent that it underlies the electrical connection 94 as well as the finger electrode 93. With this long stretched non-conductive reflective film 191 until it underlies the finger electrode 93, it is possible to prevent the absorption of light by the finger electrode 93 and further to improve the optical efficiency.
  • FIG. 34 and FIG. 35 are views, each illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the non-conductive reflective film 19, unlike the one in the semiconductor light emitting device shown in FIG. 13 , is formed up to a lateral face 11 of the substrate 10.
  • the non-conductive reflective film 91 is formed up to the lateral face 11 of the substrate 10, thereby making it possible to prevent the absorption of light by the bonding material 111.
  • This configuration is not limited to the semiconductor light emitting device shown in FIG. 13 , but it can be applied to any semiconductor light emitting device using the non-conductive reflective film 91, including those semiconductor light emitting devices shown in FIG. 2 and FIG. 18 .
  • FIG. 36 to FIG. 38 illustrate one example of a process for manufacturing the semiconductor light emitting device shown in FIG. 34 .
  • a plurality of semiconductor layers 30, 40 and 50 are formed on the substrate 10, and then an isolation process takes place to separate them into individual semiconductor light emitting devices A and B.
  • these semiconductor light emitting devices are subjected to the conventional semiconductor manufacturing process, in order to produce an optical absorption barrier 95, a light-transmitting conductive film 50 and finger electrodes 81 and 93.
  • the process for separating the semiconductor layers into individual semiconductor light emitting devices A and B can be omitted.
  • the isolation process itself can be a process for forming a groove 12 in the substrate 10. Moreover, if necessary, these semiconductor processes may be carried out in different order.
  • a groove 12 is formed in the substrate 10 to expose the lateral face 11 of the substrate 10. This process can be accomplished by etching, sawing, laser scribing or the like. For instance, a groove 12 having a depth between 10 and 50 ⁇ m can be formed.
  • the non-conductive reflective film 91 is formed according to the method described above. If necessary, electrical connections 82 and 94, electrodes 80 and 92, and an auxiliary heat-dissipating pad 97 are formed. Afterwards, those individual semiconductor light emitting devices A and B are separated into a shape as shown in FIG. 34 , by breaking, sawing or scribing-and-braking.
  • the process for forming the groove 12 may be performed immediately after the formation of the plurality of semiconductor layers 30, 40 and 50. In such case, an extra isolation process may be omitted. Therefore, the process for forming the groove 12 may be performed at any time as long as it falls prior to the formation of the non-conductive reflective film 91.
  • FIG. 39 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which a plating film 112 may additionally be provided on the electrodes 80 and 92 in order to prevent the bonding material 111 from climbing up to the semiconductor light emitting device.
  • the plating film has a height of 10 ⁇ m or more. More preferably, it has a height of 20 ⁇ m or more. Such a height is not easily obtained by sputtering or electron-beam deposition commonly used for forming electrodes 80 and 92. If the non-conductive reflective film 91 is formed on the lateral face of the growth substrate 10, the plating film 112 may have a lower height.
  • the use of a metal like Ni enables to improve its performance as a diffusion barrier against the solder used in the eutectic bonding process. If the electrodes 80 and 92 are omitted, the plating film 112 can be formed by using electrical connections 82 and 94 as seeds. The plating operation is accomplished by an electroless plating process or an electroplating process.
  • FIG. 40 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the plating film 112 formed on the electrode 92 is larger than the plating film 112 formed on the electrode 80.
  • FIG. 41 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which a plating film 112 is applied to the semiconductor light emitting device shown in FIG. 3 , with the plating film 112 on the electrode 80 being formed higher, thereby resolving the problem of a height difference between the electrode 92 and the electrode 80 during the flip-chip bonding process.
  • One plating process may suffice to match the height of the plating film 112 on the electrode 92 with the height of the plating film 112 on the electrode 80, but, if necessary, the electrode 92 and the electrode 80 may be plated separately.
  • FIG. 42 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which one single plating film 112 is applied to the semiconductor light emitting device shown in FIG. 8 .
  • This plating film 112 may be formed across the entire electrode 92.
  • FIG. 43 is a view illustrating still another example of the semiconductor light emitting device according to the present disclosure, in which the semiconductor light emitting device further includes phosphors 220.
  • the phosphor 220 in combination with an epoxy resin, forms an encapsulant 230, and the semiconductor light emitting device is placed at a reflective cup 210.
  • the electrodes 80 and 92 are electrically connected to outside, by means of a conductive adhesive 240 and 250, respectively.
  • the phosphor 220 can be coated conformally as in FIG. 18 , or can be applied directly, or can be disposed at a certain distance away from the semiconductor light emitting device.
  • the substrate 50 is disposed below the active layer 40 such that light generated in the active layer 40 cannot be at the center of the reflective cup 210. This may lower the conversion efficiency of the phosphor 220, and the absorption of light by the reflective cup 210 can also become a problem.
  • the presence of the plating film 112 shown in FIG. 39 to FIG. 42 can resolve those problems. In this light, the plating film 112 preferably has a thickness of 20 ⁇ m or more.
  • FIG. 44 is a view illustrating a relation among a dielectric film, a DBR and an electrode in the semiconductor light emitting device shown in FIG. 7 , in which the dielectric film 91b, the DBR 91a and the electrode 92 are deposited in order mentioned.
  • a large portion of light generated in the active layer 40 (see FIG. 7 , hereinafter) is reflected by the dielectric film 91b and the DBR 91a towards an n-side semiconductor layer 30, part of the light is trapped inside the dielectric film 91b and the DBR 91a, or emitted through the lateral faces of the dielectric film 91b and the DBR 91a, or absorbed by the electrode 92 made of a metal.
  • the inventors analyzed the relation among the dielectric film 91b, the DBR 91a and the electrode 92, in view of an optical waveguide.
  • the optical waveguide is a structure that encloses a propagation part of light by a material having a refractive index lower than that of the propagation part of light and directs the light by total reflection.
  • the DBR 91a can be taken as the propagation part
  • the dielectric film 91b can be taken as part of the structure that encloses the propagation part.
  • the effective refractive index (which denotes an equivalent refractive index of light that can travel in a waveguide made of materials having different refractive indices, and has a value between 1.46 and 2.4) of the DBR 91a is higher than that of the dielectric film 91b composed of SiO 2 .
  • the electrode 92 made of a metal presents on the opposite side, the light absorption may occur as the electrode 92 propagates the light in the lateral direction of the DBR 91a.
  • FIG. 45 is a view illustrating a relation among a dielectric film having an optical waveguide incorporated therein, a DBR and an electrode in the semiconductor light emitting device shown in FIG. 7 , in which the dielectric film 91b, the DBR 91a and the electrode 92 are deposited in order mentioned, and a light-transmitting film 91f having an effective refractive index lower than that of the DBR 91a is interposed between the DBR 91a and the electrode 92.
  • the light-transmitting film 91f has a thickness of at least ⁇ /4n (here, ⁇ denotes a wavelength of light generated in the active layer 40, and n denotes a refractive index of the material forming the light-transmitting film 91f).
  • the light-transmitting film 91f can be composed of a dielectric such as SiO 2 having a refractive index of 1.46.
  • ⁇ is 450 nm (4500 ⁇ )
  • the use of such a material enables to increase the efficiency of an optical waveguide, considering that the efficiency of an optical waveguide increases as the difference between the refractive index of the light-transmitting film 91f and the effective refractive index of the DBR 91a increases.
  • the light-transmitting film 91f is not particularly limited as far as its effective refractive index is lower than that of the DBR 91a, and can be made of a material, for example, metal oxide such as Al 2 O 3 ; a dielectric film such as SiO 2 or SiON; MgF; CaF or the like.
  • the difference between the refractive indices is small, the light-transmitting film needs to be sufficiently thick to obtain comparable effects.
  • the efficiency of an optical waveguide can be increased by employing SiO 2 having a refractive index lower than 1.46.
  • FIG. 46 is one example of the semiconductor light emitting device into which the optical waveguide described in FIG. 45 is incorporated.
  • a light-transmitting film 91f having a refractive index lower than the effective refractive index of a DBR 91a is present on the DBR 91a. That is to say, the non-conductive reflective film 91 further includes the light-transmitting film 91f.
  • the light-transmitting film 91f is composed of a conductive material such as a metal oxide, the light-transmitting film 91f does not always constitute part of the non-conductive reflective film 91. It is possible to consider a case where the dielectric film 91b is omitted.
  • the electrode 92 may be formed across the entire light-transmitting film 91f, or may be formed on only a part of the light-transmitting film 91f, or may be omitted.
  • FIG. 47 illustrates a conceptual view of the semiconductor light emitting device to which an optical waveguide according to the present disclosure is applied.
  • the semiconductor light emitting device includes an n-type semiconductor layer 30, an active layer 40, a p-type semiconductor layer 50, a DBR 91a provided on one side of the plurality of semiconductor layers 30, 40 and 50, and two light-transmitting films 91f and 91f having a refractive index lower than that of the DBR 91a due to the presence of the DBR 91a therebetween.
  • the conductivity types of the n-type semiconductor layer 30 and the p-type semiconductor layer 50 may be reversed.
  • FIG. 48 is a view illustrating another example of the semiconductor light emitting device to which an optical waveguide according to the present disclosure is applied.
  • a metal film 3000 is formed below the light-transmitting film 91f.
  • the metal film 3000 can serve simply as a reflective film, or it can serve as an electrode as well. If the metal film 3000 serves as an electrode, an electrical connection 4000 may be provided when needed, for supplying current to a plurality of semiconductor layers 30, 40 and 50.
  • FIG. 49 is a view illustrating another example of the semiconductor light emitting device to which an optical waveguide according to the present disclosure is applied.
  • a light-transmitting substrate or growth substrate 10 is provided between the n-type semiconductor 30 and the light-transmitting film 91f.
  • An electrode 70 is formed on the p-type semiconductor layer 50, and an electrode 80 is formed on the exposed n-type semiconductor layer 30 by etching.
  • the DBR 91a reflects light that is generated in the active layer 40 towards the opposite side of the substrate 10 with respect to the active layer 40, that is, towards the p-type semiconductor layer 50, and forms an optical waveguide with the light-transmitting films 91f and 91f, emitting part of the light to the lateral face thereof.
  • FIG. 50 is a view illustrating still another example of the semiconductor light emitting device to which an optical waveguide according to the present disclosure is applied.
  • a light-transmitting substrate 10 also serves as a light-transmitting film 91f.
  • the substrate made of sapphire having a refractive index of about 1.8 and a thickness of 50 ⁇ m - 180 ⁇ m can also serve as a light-transmitting film 91f for the DBR 91a composed of SiO 2 /TiO 2 .
  • the light-transmitting film 91f underlying the DBR 91a can be made at the chip level, by depositing a dielectric material such as SiO 2 , or a metal oxide. As such, it is possible to form the light-transmitting film 91f at the chip level in accordance with the properties of the DBR 91a, and to attach a reflective film 3000 to the light-transmitting film 91f at the chip level.

Claims (10)

  1. Lichtemittierende Halbleitervorrichtung mit einer Vielzahl von Halbleiterschichten (30, 40, 50), umfassend eine erste Halbleiterschicht (30) mit einer ersten Leitfähigkeit, eine zweite Halbleiterschicht (50) mit einer zweiten Leitfähigkeit, die sich von der ersten Leitfähigkeit unterscheidet, und eine aktive Schicht (40), die zwischen der ersten Halbleiterschicht (30) und der zweiten Halbleiterschicht (50) angeordnet ist und Licht durch Elektron-Loch-Rekombination erzeugt; und einen nichtleitenden, verteilten Bragg-Reflektor (91a, 91d), der auf der Vielzahl von Halbleiterschichten (30, 40, 50) vorgesehen ist und das Licht von der aktiven Schicht (40) reflektiert;
    dadurch gekennzeichnet, dass sie umfasst:
    einen ersten lichtdurchlässigen Film (91e, 91f) in Kontakt mit dem nichtleitenden, verteilten Bragg-Reflektor (91a, 91d) von einer Seite, die der Vielzahl von Halbleiterschichten (30, 40, 50) in Bezug auf den nichtleitenden, verteilten Bragg-Reflektor (91a, 91d) gegenüberliegt, und mit einer Dicke größer als λ/4n, die von der oberen Schicht des nichtleitenden, verteilten Bragg-Reflektors (91a oder 91d) zu unterscheiden ist, wobei λ eine Wellenlänge des in der aktiven Schicht (40) erzeugten Lichts ist und n ein Brechungsindex des ersten lichtdurchlässigen Films (91e oder 91f) ist, wobei der erste lichtdurchlässige Film (91e, 91f) einen Brechungsindex aufweist, der niedriger ist als ein effektiver Brechungsindex des nichtleitenden, verteilten Bragg-Reflektors (91a, 91d);
    erste und zweite Elektroden (80, 92), die der Vielzahl von Halbleiterschichten (30, 40, 50) Elektronen und Löcher zuführen und auf dem ersten lichtdurchlässigen Film (91e, 91f) vorgesehen und mit diesem in Kontakt sind; und,
    einen zweiten lichtdurchlässigen Film (91b oder 91c) aus einem dielektrischen Material, der zwischen der Vielzahl von Halbleiterschichten (30, 40 und 50) und dem nichtleitenden verteilten Bragg-Reflektor (91a oder 91d) angeordnet ist und in Kontakt mit dem nichtleitenden verteilten Bragg-Reflektor (91a oder 91d) gegenüber dem ersten lichtdurchlässigen Film (91f oder 91e) steht, wobei der nichtleitende verteilte Bragg-Reflektor (91a, 91d) einen effektiven Brechungsindex aufweist, der höher ist als der Brechungsindex des zweiten lichtdurchlässigen Films (91b, 91c), wobei der nichtleitende, verteilte Bragg-Reflektor (91a oder 91d) als Ausbreitungsabschnitt dient, in dem eingefangenes Licht auf die Seitenfläche (91m) des nichtleitenden, verteilten Bragg-Reflektors (91a oder 91d) ausbreitbar ist.
  2. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass:
    die Seitenfläche (91m) eine geneigte Fläche ist.
  3. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass der erste lichtdurchlässige Film (91e, 91f) ein dielektrischer Film wie SiO2 oder SiON ist.
  4. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass sie ferner umfasst:
    einen Metallfilm (97, 121, 122, 124), der mit dem ersten lichtdurchlässigen Film (91e, 91f) verbunden ist.
  5. Lichtemittierende Halbleitervorrichtung nach Anspruch 3, dadurch gekennzeichnet, dass der erste lichtdurchlässige Film (91e, 91f) aus SiO2 besteht.
  6. Lichtemittierende Halbleitervorrichtung nach Anspruch 5, dadurch gekennzeichnet, dass der zweite lichtdurchlässige Film (91b, 91c) und der erste lichtdurchlässige Film (91e, 91f) aus SiO2 bestehen.
  7. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass der erste lichtdurchlässige Film (91e, 91f) aus einem Metalloxid besteht.
  8. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass sie ferner umfasst:
    eine elektrische Verbindung (94), die durch den ersten lichtdurchlässigen Film (91e, 91f), den nichtleitenden, verteilten Bragg-Reflektor (91a, 91d) und den zweiten lichtdurchlässigen Film (91b, 91c) verläuft, wodurch die zweite Halbleiterschicht (50) und die zweite Elektrode (92) elektrisch verbunden werden.
  9. Lichtemittierende Halbleitervorrichtung nach Anspruch 1, dadurch gekennzeichnet, dass sie ferner umfasst
    eine elektrische Verbindung (82), die durch den ersten lichtdurchlässigen Film (91f oder 91e), den nichtleitenden, verteilten Bragg-Reflektor (91a oder 91d) und den zweiten lichtdurchlässigen Film (91b oder 91c) verläuft, wodurch die erste Halbleiterschicht (30) und die erste Elektrode (80) elektrisch verbunden werden.
  10. Lichtemittierende Halbleitervorrichtung nach Anspruch 8, dadurch gekennzeichnet, dass sie ferner umfasst
    eine elektrische Verbindung (82), die durch den ersten lichtdurchlässigen Film (91f oder 91e), den nichtleitenden, verteilten Bragg-Reflektor (91a oder 91d) und den zweiten lichtdurchlässigen Film (91b oder 91c) verläuft, wodurch die erste Halbleiterschicht (30) und die erste Elektrode (80) elektrisch verbunden werden.
EP13819369.3A 2012-07-18 2013-07-18 Lichtemittierende halbleitervorrichtung Active EP2782148B1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020120078278A KR101364246B1 (ko) 2012-07-18 2012-07-18 반도체 발광소자
KR1020120083097A KR101371545B1 (ko) 2012-07-30 2012-07-30 반도체 발광소자
KR1020120098423A KR101419867B1 (ko) 2012-09-05 2012-09-05 반도체 발광소자
KR1020130002950A KR101378948B1 (ko) 2013-01-10 2013-01-10 반도체 발광소자
PCT/KR2013/006459 WO2014014300A2 (ko) 2012-07-18 2013-07-18 반도체 발광소자

Publications (3)

Publication Number Publication Date
EP2782148A2 EP2782148A2 (de) 2014-09-24
EP2782148A4 EP2782148A4 (de) 2015-08-05
EP2782148B1 true EP2782148B1 (de) 2020-05-06

Family

ID=49949325

Family Applications (1)

Application Number Title Priority Date Filing Date
EP13819369.3A Active EP2782148B1 (de) 2012-07-18 2013-07-18 Lichtemittierende halbleitervorrichtung

Country Status (4)

Country Link
US (1) US9530941B2 (de)
EP (1) EP2782148B1 (de)
CN (1) CN103988322B (de)
WO (1) WO2014014300A2 (de)

Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9899329B2 (en) 2010-11-23 2018-02-20 X-Celeprint Limited Interconnection structures and methods for transfer-printed integrated circuit elements with improved interconnection alignment tolerance
US8934259B2 (en) 2011-06-08 2015-01-13 Semprius, Inc. Substrates with transferable chiplets
US9466768B2 (en) * 2012-01-13 2016-10-11 Semicon Light Co., Ltd. Semiconductor light emitting device with a light-reflecting face
WO2014014298A1 (ko) 2012-07-18 2014-01-23 주식회사 세미콘라이트 반도체 발광소자의 제조 방법
US10535798B2 (en) 2012-07-18 2020-01-14 Semicon Light Co., Ltd. Semiconductor light emitting device comprising finger electrodes
US9461209B2 (en) 2013-11-27 2016-10-04 Epistar Corporation Semiconductor light-emitting device
US11329195B2 (en) 2013-08-27 2022-05-10 Epistar Corporation Semiconductor light-emitting device
US9954144B2 (en) * 2014-01-10 2018-04-24 Cree, Inc. Wafer level contact pad solder bumping for surface mount devices with non-planar recessed contacting surfaces
US10205060B2 (en) 2014-02-11 2019-02-12 Semicon Light Co., Ltd. Semiconductor light emitting device
KR20150138977A (ko) * 2014-05-30 2015-12-11 한국전자통신연구원 발광 소자 및 그의 제조방법
WO2015190817A1 (ko) * 2014-06-10 2015-12-17 주식회사 세미콘라이트 반도체 발광소자
CN110010750B (zh) 2014-06-18 2021-11-09 艾克斯展示公司技术有限公司 微组装led显示器
US9716082B2 (en) 2014-08-26 2017-07-25 X-Celeprint Limited Micro assembled hybrid displays and lighting elements
US10074777B2 (en) * 2014-08-27 2018-09-11 Epistar Corporation Light emitting diode structure with dielectric reflective layer
US9799719B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Active-matrix touchscreen
US9818725B2 (en) 2015-06-01 2017-11-14 X-Celeprint Limited Inorganic-light-emitter display with integrated black matrix
US9991163B2 (en) 2014-09-25 2018-06-05 X-Celeprint Limited Small-aperture-ratio display with electrical component
US9799261B2 (en) 2014-09-25 2017-10-24 X-Celeprint Limited Self-compensating circuit for faulty display pixels
KR102038443B1 (ko) 2015-03-26 2019-10-30 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
US9871345B2 (en) 2015-06-09 2018-01-16 X-Celeprint Limited Crystalline color-conversion device
US10133426B2 (en) 2015-06-18 2018-11-20 X-Celeprint Limited Display with micro-LED front light
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
US10255834B2 (en) 2015-07-23 2019-04-09 X-Celeprint Limited Parallel redundant chiplet system for controlling display pixels
US10380930B2 (en) 2015-08-24 2019-08-13 X-Celeprint Limited Heterogeneous light emitter display system
US10230048B2 (en) 2015-09-29 2019-03-12 X-Celeprint Limited OLEDs for micro transfer printing
US9871174B2 (en) * 2015-12-04 2018-01-16 Epistar Corporation Light-emitting device
US10066819B2 (en) 2015-12-09 2018-09-04 X-Celeprint Limited Micro-light-emitting diode backlight system
US9786646B2 (en) 2015-12-23 2017-10-10 X-Celeprint Limited Matrix addressed device repair
CN109983589B (zh) * 2015-12-29 2022-04-12 亮锐控股有限公司 具有侧面反射器和磷光体的倒装芯片led
WO2017130520A1 (ja) * 2016-01-25 2017-08-03 京セラ株式会社 計測センサ用パッケージおよび計測センサ
US10361677B2 (en) 2016-02-18 2019-07-23 X-Celeprint Limited Transverse bulk acoustic wave filter
US10200013B2 (en) 2016-02-18 2019-02-05 X-Celeprint Limited Micro-transfer-printed acoustic wave filter device
US10109753B2 (en) 2016-02-19 2018-10-23 X-Celeprint Limited Compound micro-transfer-printed optical filter device
US10217730B2 (en) 2016-02-25 2019-02-26 X-Celeprint Limited Efficiently micro-transfer printing micro-scale devices onto large-format substrates
US10150326B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid document with variable state
US10150325B2 (en) 2016-02-29 2018-12-11 X-Celeprint Limited Hybrid banknote with electronic indicia
US10193025B2 (en) 2016-02-29 2019-01-29 X-Celeprint Limited Inorganic LED pixel structure
US10153256B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-transfer printable electronic component
US10153257B2 (en) 2016-03-03 2018-12-11 X-Celeprint Limited Micro-printed display
US10199546B2 (en) 2016-04-05 2019-02-05 X-Celeprint Limited Color-filter device
US10008483B2 (en) 2016-04-05 2018-06-26 X-Celeprint Limited Micro-transfer printed LED and color filter structure
US10198890B2 (en) 2016-04-19 2019-02-05 X-Celeprint Limited Hybrid banknote with electronic indicia using near-field-communications
US9997102B2 (en) 2016-04-19 2018-06-12 X-Celeprint Limited Wirelessly powered display and system
US9997501B2 (en) 2016-06-01 2018-06-12 X-Celeprint Limited Micro-transfer-printed light-emitting diode device
US11137641B2 (en) 2016-06-10 2021-10-05 X Display Company Technology Limited LED structure with polarized light emission
US9980341B2 (en) 2016-09-22 2018-05-22 X-Celeprint Limited Multi-LED components
US10782002B2 (en) 2016-10-28 2020-09-22 X Display Company Technology Limited LED optical components
US10347168B2 (en) 2016-11-10 2019-07-09 X-Celeprint Limited Spatially dithered high-resolution
US10395966B2 (en) 2016-11-15 2019-08-27 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
TWI739949B (zh) 2016-11-15 2021-09-21 愛爾蘭商艾克斯展示公司技術有限公司 微轉印可印刷覆晶結構及方法
US10600671B2 (en) 2016-11-15 2020-03-24 X-Celeprint Limited Micro-transfer-printable flip-chip structures and methods
US10438859B2 (en) 2016-12-19 2019-10-08 X-Celeprint Limited Transfer printed device repair
US10396137B2 (en) 2017-03-10 2019-08-27 X-Celeprint Limited Testing transfer-print micro-devices on wafer
US11024608B2 (en) 2017-03-28 2021-06-01 X Display Company Technology Limited Structures and methods for electrical connection of micro-devices and substrates
KR102302593B1 (ko) * 2017-07-13 2021-09-15 삼성전자주식회사 발광 소자, 이를 포함하는 패키지, 및 이의 제조 방법
KR102302592B1 (ko) 2017-07-18 2021-09-15 삼성전자주식회사 반도체 발광 소자
WO2019039914A2 (ko) * 2017-08-25 2019-02-28 엘지이노텍 주식회사 반도체 소자 및 반도체 소자 패키지
KR102427642B1 (ko) 2018-01-25 2022-08-01 삼성전자주식회사 반도체 발광소자
US20190259923A1 (en) * 2018-02-22 2019-08-22 Epistar Corporation Light-emitting device
KR102147443B1 (ko) * 2018-10-25 2020-08-28 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
CN110707196A (zh) * 2019-10-21 2020-01-17 扬州乾照光电有限公司 一种具有互补图形介质层的led芯片及制作方法
JP2022044493A (ja) * 2020-09-07 2022-03-17 日亜化学工業株式会社 発光素子

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120053784A (ko) * 2010-11-18 2012-05-29 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩, 그것을 제조하는 방법 및 그것을 갖는 패키지

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1174559A (ja) 1997-08-28 1999-03-16 Fuji Photo Film Co Ltd 半導体発光素子および露光装置
DE69839300T2 (de) 1997-12-15 2009-04-16 Philips Lumileds Lighting Company, LLC, San Jose Licht-emittierende Vorrichtung
US6347104B1 (en) * 1999-02-04 2002-02-12 Genoa Corporation Optical signal power monitor and regulator
KR100405537B1 (ko) * 2001-04-09 2003-11-14 현대자동차주식회사 자동차용 냉각시스템의 공기제거 및 냉각수 보충장치
US6658037B2 (en) * 2001-04-11 2003-12-02 Eastman Kodak Company Incoherent light-emitting device apparatus for driving vertical laser cavity
US6455340B1 (en) * 2001-12-21 2002-09-24 Xerox Corporation Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
US6958494B2 (en) * 2003-08-14 2005-10-25 Dicon Fiberoptics, Inc. Light emitting diodes with current spreading layer
JP4453515B2 (ja) 2004-10-22 2010-04-21 豊田合成株式会社 半導体発光素子
KR100730082B1 (ko) 2005-10-17 2007-06-19 삼성전기주식회사 질화물계 반도체 발광소자
KR100826375B1 (ko) 2006-08-24 2008-05-02 삼성전기주식회사 질화물 반도체 발광소자 및 제조 방법
JP2008112957A (ja) 2006-10-06 2008-05-15 Mitsubishi Cable Ind Ltd ＧａＮ系ＬＥＤチップ
WO2008047923A1 (fr) 2006-10-20 2008-04-24 Mitsubishi Chemical Corporation Dispositif de diode émettrice de lumière à semi-conducteur à base de nitrure
TWI475716B (zh) 2007-03-19 2015-03-01 Epistar Corp 光電元件
DE102007022947B4 (de) * 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
US20100133506A1 (en) * 2007-06-15 2010-06-03 Rohm Co., Ltd. Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor
EP2176891B1 (de) 2007-07-19 2018-12-26 Lumileds Holding B.V. Vertikal-led mit leitfähigen durchgangslöchern
JP5223102B2 (ja) 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
JP5634003B2 (ja) 2007-09-29 2014-12-03 日亜化学工業株式会社 発光装置
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
JP2009164423A (ja) 2008-01-08 2009-07-23 Nichia Corp 発光素子
JP5021693B2 (ja) 2009-04-14 2012-09-12 スタンレー電気株式会社 半導体発光素子
JP5152133B2 (ja) 2009-09-18 2013-02-27 豊田合成株式会社 発光素子
TWI412161B (zh) 2009-11-06 2013-10-11 Semileds Optoelectronics Co 發光二極體裝置
TWI531088B (zh) 2009-11-13 2016-04-21 首爾偉傲世有限公司 具有分散式布拉格反射器的發光二極體晶片
JP5719110B2 (ja) * 2009-12-25 2015-05-13 日亜化学工業株式会社 発光素子
JP5793292B2 (ja) 2010-02-17 2015-10-14 豊田合成株式会社 半導体発光素子
JP5195798B2 (ja) * 2010-03-23 2013-05-15 豊田合成株式会社 半導体発光素子の製造方法
KR101666442B1 (ko) 2010-03-25 2016-10-17 엘지이노텍 주식회사 발광 다이오드 및 이를 포함하는 발광 소자 패키지
WO2011126248A2 (en) 2010-04-06 2011-10-13 Seoul Opto Device Co., Ltd. Light emitting diode and method of fabricating the same
WO2012015153A2 (en) * 2010-07-28 2012-02-02 Seoul Opto Device Co., Ltd. Light emitting diode having distributed bragg reflector
KR101158075B1 (ko) 2010-08-10 2012-06-22 서울옵토디바이스주식회사 분포 브래그 반사기를 갖는 발광 다이오드
KR20120042500A (ko) 2010-10-25 2012-05-03 삼성엘이디 주식회사 반도체 발광 소자 및 그 제조방법
KR101746004B1 (ko) 2010-10-29 2017-06-27 엘지이노텍 주식회사 발광소자
KR20120126856A (ko) * 2011-05-13 2012-11-21 삼성전자주식회사 반도체 발광다이오드 칩 및 이를 이용한 발광장치
WO2014014298A1 (ko) 2012-07-18 2014-01-23 주식회사 세미콘라이트 반도체 발광소자의 제조 방법
US10535798B2 (en) 2012-07-18 2020-01-14 Semicon Light Co., Ltd. Semiconductor light emitting device comprising finger electrodes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120053784A (ko) * 2010-11-18 2012-05-29 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩, 그것을 제조하는 방법 및 그것을 갖는 패키지

Also Published As

Publication number Publication date
CN103988322A (zh) 2014-08-13
US20140231839A1 (en) 2014-08-21
US9530941B2 (en) 2016-12-27
WO2014014300A2 (ko) 2014-01-23
EP2782148A2 (de) 2014-09-24
WO2014014300A3 (ko) 2014-03-13
CN103988322B (zh) 2016-10-12
EP2782148A4 (de) 2015-08-05

Similar Documents

Publication Publication Date Title
EP2782148B1 (de) Lichtemittierende halbleitervorrichtung
US20200127161A1 (en) Semiconductor light emitting device comprising finger electrodes
EP2782147B1 (de) Verfahren zur herstellung eines lichtemittierenden halbleiterelements
EP2784832B1 (de) Lichtemittierende halbleitervorrichtung
KR101368720B1 (ko) 반도체 발광소자
US9748446B2 (en) Semiconductor light emitting device
US9691944B2 (en) Semiconductor light-emitting device and method for manufacturing the same
CN108475715B (zh) 半导体发光元件
KR101403639B1 (ko) 반도체 발광소자
KR101427316B1 (ko) 반도체 발광소자
KR101638120B1 (ko) 반도체 발광소자
KR101363496B1 (ko) 반도체 발광소자의 제조 방법
KR101489375B1 (ko) 반도체 발광소자
KR101478761B1 (ko) 반도체 발광소자
KR101363495B1 (ko) 반도체 발광소자
KR101378948B1 (ko) 반도체 발광소자
KR20140036289A (ko) 반도체 발광소자
KR101403641B1 (ko) 반도체 발광소자
KR101378950B1 (ko) 반도체 발광소자
KR101405449B1 (ko) 반도체 발광소자
KR101403636B1 (ko) 반도체 발광소자
KR101364246B1 (ko) 반도체 발광소자
KR20150114446A (ko) 반도체 발광소자
KR101419867B1 (ko) 반도체 발광소자
KR101291088B1 (ko) 반도체 발광소자

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20140528

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

A4 Supplementary search report drawn up and despatched

Effective date: 20150703

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/00 20100101AFI20150629BHEP

Ipc: H01L 33/44 20100101ALI20150629BHEP

Ipc: H01L 33/46 20100101ALI20150629BHEP

Ipc: H01L 33/38 20100101ALI20150629BHEP

Ipc: H01L 33/20 20100101ALN20150629BHEP

Ipc: H01L 33/42 20100101ALN20150629BHEP

Ipc: H01L 33/32 20100101ALI20150629BHEP

Ipc: H01L 33/40 20100101ALN20150629BHEP

DAX Request for extension of the european patent (deleted)
GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/38 20100101AFI20190605BHEP

Ipc: H01L 33/20 20100101ALN20190605BHEP

Ipc: H01L 33/44 20100101ALN20190605BHEP

Ipc: H01L 33/46 20100101ALI20190605BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/46 20100101ALI20190611BHEP

Ipc: H01L 33/44 20100101ALN20190611BHEP

Ipc: H01L 33/38 20100101AFI20190611BHEP

Ipc: H01L 33/20 20100101ALN20190611BHEP

INTG Intention to grant announced

Effective date: 20190628

GRAJ Information related to disapproval of communication of intention to grant by the applicant or resumption of examination proceedings by the epo deleted

Free format text: ORIGINAL CODE: EPIDOSDIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602013068867

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0033460000

Ipc: H01L0033380000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

INTC Intention to grant announced (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/20 20100101ALN20191106BHEP

Ipc: H01L 33/44 20100101ALN20191106BHEP

Ipc: H01L 33/38 20100101AFI20191106BHEP

Ipc: H01L 33/46 20100101ALI20191106BHEP

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 33/46 20100101ALI20191112BHEP

Ipc: H01L 33/44 20100101ALN20191112BHEP

Ipc: H01L 33/20 20100101ALN20191112BHEP

Ipc: H01L 33/38 20100101AFI20191112BHEP

INTG Intention to grant announced

Effective date: 20191128

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

Ref country code: AT

Ref legal event code: REF

Ref document number: 1268244

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200515

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602013068867

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200907

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200906

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200807

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200806

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200806

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1268244

Country of ref document: AT

Kind code of ref document: T

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602013068867

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20210209

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20200731

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200718

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200731

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20200718

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20200506

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20230720

Year of fee payment: 11

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20230725

Year of fee payment: 11

Ref country code: DE

Payment date: 20230731

Year of fee payment: 11

REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

Free format text: REGISTERED BETWEEN 20240314 AND 20240320