EP2739765B1 - Systèmes et procédés pour traiter de la vapeur - Google Patents
Systèmes et procédés pour traiter de la vapeur Download PDFInfo
- Publication number
- EP2739765B1 EP2739765B1 EP12821620.7A EP12821620A EP2739765B1 EP 2739765 B1 EP2739765 B1 EP 2739765B1 EP 12821620 A EP12821620 A EP 12821620A EP 2739765 B1 EP2739765 B1 EP 2739765B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- vapor
- conduit
- vacuum chamber
- control valve
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims description 61
- 238000012545 processing Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 58
- 238000000576 coating method Methods 0.000 claims description 37
- 239000011248 coating agent Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 9
- 238000009833 condensation Methods 0.000 claims description 7
- 230000005494 condensation Effects 0.000 claims description 7
- -1 fluoropolyethers Polymers 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 238000006116 polymerization reaction Methods 0.000 claims description 4
- 102000004196 processed proteins & peptides Human genes 0.000 claims description 4
- 108090000765 processed proteins & peptides Proteins 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 3
- 239000003814 drug Substances 0.000 claims description 3
- 229940079593 drug Drugs 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 239000001993 wax Substances 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 102000004190 Enzymes Human genes 0.000 claims description 2
- 108090000790 Enzymes Proteins 0.000 claims description 2
- 239000004593 Epoxy Substances 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 claims description 2
- 150000003926 acrylamides Chemical class 0.000 claims description 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 150000001720 carbohydrates Chemical class 0.000 claims description 2
- 235000014633 carbohydrates Nutrition 0.000 claims description 2
- 239000000890 drug combination Substances 0.000 claims description 2
- 239000002359 drug metabolite Substances 0.000 claims description 2
- 239000000975 dye Substances 0.000 claims description 2
- 125000003700 epoxy group Chemical group 0.000 claims description 2
- 125000001153 fluoro group Chemical group F* 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 150000002632 lipids Chemical class 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001272 nitrous oxide Substances 0.000 claims description 2
- 102000039446 nucleic acids Human genes 0.000 claims description 2
- 108020004707 nucleic acids Proteins 0.000 claims description 2
- 150000007523 nucleic acids Chemical class 0.000 claims description 2
- 239000003921 oil Substances 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000768 polyamine Polymers 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- 102000040430 polynucleotide Human genes 0.000 claims description 2
- 108091033319 polynucleotide Proteins 0.000 claims description 2
- 229920001184 polypeptide Polymers 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 102000004169 proteins and genes Human genes 0.000 claims description 2
- 108090000623 proteins and genes Proteins 0.000 claims description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 2
- 125000002534 ethynyl group Chemical class [H]C#C* 0.000 claims 1
- 230000000977 initiatory effect Effects 0.000 claims 1
- 239000012530 fluid Substances 0.000 description 35
- 230000037361 pathway Effects 0.000 description 24
- 230000008569 process Effects 0.000 description 18
- 239000010408 film Substances 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 8
- 238000001704 evaporation Methods 0.000 description 8
- 230000008020 evaporation Effects 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000000975 bioactive effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- HMXFDVVLNOFCHW-UHFFFAOYSA-N 1-butyl-2,2-dimethoxyazasilolidine Chemical compound CCCCN1CCC[Si]1(OC)OC HMXFDVVLNOFCHW-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000000475 acetylene derivatives Chemical class 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004811 fluoropolymer Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D3/00—Distillation or related exchange processes in which liquids are contacted with gaseous media, e.g. stripping
- B01D3/10—Vacuum distillation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
- C23C14/582—Thermal treatment using electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2252/00—Sheets
- B05D2252/02—Sheets of indefinite length
Definitions
- the present disclosure relates to systems and methods for processing vapor and, particularly, to systems and methods for monitoring and controlling a flow of vapor generated by a vapor source.
- Vapor coating techniques such as plasma deposition and chemical vapor deposition are used to deposit thin coatings of various materials without the use of solvents.
- Processes for coating organic materials onto a substrate e.g., polymerizable or curable materials
- a substrate e.g., a polymer film
- Processes for coating organic materials onto a substrate e.g., a polymer film
- a substrate e.g., a polymer film
- U.S. Patent 4,842,893 e.g., U.S. Patent 4,842,893
- These processes can involve the evaporation of organic or organometallic precursors to create a vapor that is transferred to the substrate to be coated.
- Some patents related to evaporation methods and apparatus are U.S. Patents 6,309,508 , 7,113,351 and US Patent Application US 2003/0230239 A1 .
- the present invention provides a system for processing vapour according to claim 1.
- the system may include a vapor source for producing a vapor and an outlet conduit coupled to the vapor source for carrying the vapor from the vapor source. Downstream of the vapor source the outlet conduit may separate into a vapor bypass conduit and a vapor feed conduit.
- the system may further include a first vapor control valve disposed in the bypass conduit, a second vapor control valve disposed in the feed conduit, a first vacuum chamber fluidically coupled to the bypass conduit, and a second vacuum chamber fluidically coupled to the feed conduit.
- the present invention provides a method for processing vapour according to claim 10.
- the method may include discharging a vapor from a vapor source into a fluid pathway.
- the fluid pathway may include an outlet conduit fluidically coupled to the vapor source. Downstream of the vapor source the outlet conduit may separate into a vapor bypass conduit and a vapor feed conduit.
- the fluid pathway may further include a first vapor control valve disposed in the bypass conduit and a second vapor control valve disposed in the feed conduit, a first vacuum chamber fluidically coupled to the bypass conduit, and a second vacuum chamber fluidically coupled to the feed conduit.
- the method may further include controlling an amount of vapor passing through the feed conduit and the bypass conduit via manipulation of either or both of the first vapor control valve and the second vapor control valve.
- Vapor coating techniques such as, for example, chemical vapor deposition (CVD), plasma deposition, and polymer multi-layer deposition are used to deposit thin coatings of various materials on a substrate without the use of solvents. Often times, these techniques require the evaporation of a material (e.g., an organic, organometallic, or metal) to create a vapor flow to a deposition appliance (e.g., nozzle), which is positioned proximate the substrate to be coated.
- CVD chemical vapor deposition
- plasma deposition e.g., a plasma deposition
- polymer multi-layer deposition e.g., vapor flow
- the present disclosure relates to systems and methods for monitoring and controlling the characteristics of a vapor flow produced by a vapor source (e.g., an evaporator).
- the systems and methods may involve monitoring and controlling a flow of vapor generated by a vapor source, which is to be deposited as a coating onto a substrate in a vapor coating chamber, such that a rate of vapor production in the vapor source (e.g., evaporation rate) is decoupled from a deposition rate of the vapor in the vapor coating chamber.
- a rate of vapor production in the vapor source e.g., evaporation rate
- the systems and methods of the present disclosure may account for perturbations in vapor flow caused by variable vapor generation rates, thereby enabling precise control of vapor deposition rates and coating thickness.
- FIG. 1 illustrates a schematic diagram of a system 2 for processing vapor in accordance with some embodiments of the present disclosure.
- the system may include a vapor source 4 fluidically coupled, via a fluid pathway 6, to a first vacuum chamber 8 and a second vacuum chamber 12.
- the fluid pathway 6 may include an outlet conduit 6a, a vapor bypass conduit 6b, and a vapor feed conduit 6c.
- a pressure sensor 14 may be operatively coupled to the fluid pathway 6.
- a vapor bypass control valve 16 and a vapor feed control valve 18 may be disposed in the vapor bypass conduit 6b and the vapor feed conduit 6c, respectively.
- the system may further include a controller 22 operatively coupled to the pressure sensor 14 and either or both of the bypass vapor control valve 16 and the feed vapor control valve 18.
- the vapor source 4 may be configured as any device capable of vaporizing liquid. Suitable vapor sources may include, for example, heated baths, bubblers, atomizers, cyclone evaporators, ultrasonic evaporators, wiped-film evaporators, rolled film evaporators, spinning disk evaporators, rotary evaporators, porous frit evaporators, tubular evaporators, and the like. In various embodiments, the vapor source 4 may include one or more of the vapor sources described in the following patents and publications, incorporated by reference herein in their entireties: U.S. Pub. No. 2008/0108180 (Charles, et al. ); U.S. Pub. No.
- the vapor supplied by the vapor source 4 may include monomers, oligomers, resins, waxes, solvents, organic compounds, organometallic compounds, metallic compounds, biologically active materials, and combinations thereof.
- suitable materials for vaporization include, but are not limited to, epoxies, vinyl ethers, (meth)acrylates, fluoro-containing polymers, styrene containing polymers, acetylenes, polyamides, acrylamides, parylenes, waxes, fluoropolyethers, polyamines, diallyldiphenylsilanes, metal alkoxides, metal alkyls, silicones, oils, dyes, proteins, peptides, polypeptides, lipids, carbohydrates, enzymes, nucleic acids, polynucleic acids, drugs, drug metabolites, and combinations thereof.
- the vapor supplied by the vapor source 4 may include one or more additives to affect processing of the vapor and/or the properties and performance of a condensed or deposited material formed from the vapor, as is known in the art.
- one or more additives may be included to lower surface tension, reduce viscosity, inhibit thermally-induced reactions such as polymerization, prevent oxidation reactions, or combinations thereof.
- one or more additives may be included to absorb radiation (e.g., UV, visible wavelengths, IR, and microwave energy) and/or initiate reactions (e.g., photoinitiators, thermal initiators, and the like).
- radiation e.g., UV, visible wavelengths, IR, and microwave energy
- initiate reactions e.g., photoinitiators, thermal initiators, and the like.
- Other additives may include colorants, crosslinkers, or other materials known in the art.
- the system 2 may include a gas source 24 configured to provide a flow of gas to the vapor source 4 and/or the flow pathway 6.
- Suitable inert gases may include nitrogen, argon, helium, neon, and combinations thereof.
- Suitable reactive gases may include oxygen, ozone, nitrous oxide, hydrogen, hydrogen sulfide, carbon tetrafluoride, methane, ammonia, and combinations thereof.
- the vapor source 4 (and optionally the gas source 24) may be fluidically coupled to a fluid pathway 6.
- the fluid pathway 6 may include an outlet conduit 6a, which is fluidically coupled on a first end to the vapor source 4, and which is bifurcated on a second end to separate flow from the outlet conduit 6a into a vapor bypass conduit 6b and a vapor feed conduit 6c.
- the vapor bypass conduit 6b may terminate in a fluidic coupling to the first vacuum chamber 8.
- the vapor feed conduit 6c may terminate in a fluidic coupling to the second vacuum chamber 12.
- one or more pressure sensors may be operatively associated with the fluid pathway 6.
- the pressure sensors may be positioned and configured to sense a pressure of fluid being transported through the fluid pathway 6.
- the system 2 may include a pressure sensor 14 positioned to sense the pressure of fluid being transported through the outlet conduit 6a.
- the system may include pressure sensors positioned in either or both of the vapor bypass conduit 6b and feed conduit 6c, for example, downstream of the vapor bypass control valve 16 and the vapor feed control valve 18, respectively.
- a bypass vapor control valve 16 and a feed vapor control valve 18 may be disposed in the vapor bypass conduit 6b and the vapor feed conduit 6c, respectively.
- the valves 16, 18 may be configured as any devices capable of fully or partially opening or closing such that one of more properties (e.g., rate, pressure) of a fluid flow passing therethrough may be adjusted.
- the degree to which the valves are opened/closed which may be referred to herein as "the position" of the valve, may be adjusted manually, or automatically, such as in response to signals received from the controller 22.
- the adjustment of the position of the valves 16, 18 may be carried out by means of mechanical, electrical, hydraulic, or pneumatic systems, or combinations thereof.
- the valves 16, 18 may be substantially similar.
- each of the valves 16, 18 may be configured such that their respective valve positions may be continuously adjustable between a fully open and a fully closed position (hereinafter, a "continuously adjustable control valve").
- the valves 16, 18 may of different construction.
- the bypass control valve 16 may be a continuously adjustable control valve and the feed control valve 18 may be configured as a basic open/close valve.
- the system 2 may include a bypass control valve 16 only (i.e., the feed control valve 18 may be omitted).
- one or more heating elements may be operatively associated with any or all of the components of the flow path 6, including the bypass and feed control valves 16, 18.
- the heating elements may be utilized to, for example, maintain the temperature of the conduits 6a, 6b, and 6c and/or valves 16, 18 at a temperature above a condensation point of a vapor being transported therethrough, thereby preventing condensation of the vapor on the walls of the conduits 6a, 6b, and 6c and/or valves 16, 18.
- the system 2 may include a controller 22 operatively coupled to one or more components of the system 2 such that one or more characteristics of a fluid flow within the fluid pathway 6 may be monitored and/or controlled.
- the controller 22 may be configured as one or more processing devices (e.g., general purpose computers, programmable logic controllers, combinations thereof) having instructions stored thereon for monitoring system variables and causing components of the system 2 to perform specified functions.
- the controller 22 may be provided with instructions to, in response to signals received from one or more components of the system 2 (e.g., sensors) selectively actuate one or more components of the system 2 (e.g., valves) to achieve/maintain a desired process condition (e.g., flow rate, pressure setpoint) within the fluid pathway 6.
- a desired process condition e.g., flow rate, pressure setpoint
- the controller 22 may be operatively coupled to any or all of the pressure sensor 14, the bypass control valve 16, and the feed control valve 18.
- the controller 22 may be provided with instructions to, for example, receive signals from the pressure sensor 14 regarding a fluid pressure within the fluid pathway 6, compare the measured pressure to a predetermined pressure setpoint, and selectively actuate either or both of the bypass control valve 16 and the feed control valve 18 (e.g., set/change valve position) such that the pressure setpoint is achieved/maintained.
- the system 2 may be configured to precisely control system pressures and flow rates, such as the pressures and flow rates of vapor entering the first vacuum chamber 8 and/or the second vacuum chamber 12. Consequently, and as will be discussed in further detail below, the system 2 may also be configured to compensate for any interruptions or perturbations in the rate of vapor supplied by the vapor source 4.
- the first vacuum chamber 8 may include any device configured to condense and collect a vapor flow under vacuum conditions.
- the first vacuum chamber 8 may be operated at a temperature and pressure sufficient to condense any or all of the components of a vapor flow which is transported from the vapor source 4 to the first vacuum chamber 8.
- the first vacuum chamber 8 may be operatively coupled to one or more vacuum sources, such as a vacuum pump 26.
- the first vacuum chamber 8 may include a condenser having a collector disposed therein for collecting condensed vapor.
- the second vacuum chamber 12 may include any device configured to condense, under vacuum conditions, at least a portion of a vapor flow introduced to the chamber 12 through the feed conduit 6c.
- the second vacuum chamber 12 may be operatively coupled to one or more vacuum sources, such as a vacuum pump 28.
- the second vacuum chamber 12 may include a condensing chamber (e.g., a vacuum distillation chamber) that includes a collector for collecting condensed vapor and optionally an outlet for releasing any uncondensed vapor.
- the second vacuum chamber 12 may be operated under conditions (e.g., temperature and pressure) such that pressure within the vacuum chamber 12 is at or above the vapor pressure of one or more components of a vapor mixture that is being transported to the vacuum chamber 12 from the feed vapor conduit 6c. In this manner, one or more components of the vapor mixture may be condensed out of a vapor mixture and collected in a collector.
- the conditions of the second vacuum chamber 12 may be different than that of the first vacuum chamber 8.
- one or more first components of a vapor mixture being transported to the vacuum chamber 12 via the fluid pathway 6 may be condensed and collected in the vacuum chamber 12, and one or more second components, which differ from the first components, may be condensed and collected in the first vacuum chamber 8.
- the second vacuum chamber 12 may include a vapor coater for depositing at least a portion of a vapor flow on a substrate.
- vapor coaters useful in the system 2 of the present disclosure may include a rotating process drum and a plurality of rollers configured for unwinding a substrate (e.g., a rolled web of material), passing the un-wound substrate over a surface of the process drum, and re-winding the substrate.
- Useful vapor coaters may also include a vapor nozzle, in fluid communication with a vapor source, configured to deposit (e.g., by condensation, CVD reaction, plasma deposition) a vapor onto a surface of the substrate as it is passed over a surface of the process drum.
- a vapor nozzle in fluid communication with a vapor source, configured to deposit (e.g., by condensation, CVD reaction, plasma deposition) a vapor onto a surface of the substrate as it is passed over a surface of the process drum.
- a vapor coater for use in the system 2 may include a first roll 32 configured to direct a substrate 34 around a rotatable process drum 36, and a second roll 38 configured to re-wind the substrate.
- the vapor coater may further include one or more vapor nozzles 42 positioned proximate a surface 43 of the rotatable process drum 36.
- the vapor nozzles 42 may be configured to deposit/condense a vapor onto a surface of the substrate 34 as it is passed over the process drum 36.
- the vapor nozzles 42 may be fluidically coupled to the fluid pathway 6, particularly, the vapor feed conduit 6c.
- the rotatable process drum 36 may be provided with a heat transfer fluid circulation such that at least the surface 43 is temperature controlled, thereby promoting condensation, reaction, and/or other form of deposition of vapor onto the substrate 34.
- the vapor coater may further include one or more curing sources 44.
- the curing sources 44 may be positioned within the vapor coater such that following vapor deposition/condensation, the substrate 34 may be exposed to a treatment delivered from the curing sources 44.
- Curing sources 44 useful in the systems of the present disclosure include one or more of, for example, heat sources, ultraviolet radiation sources, e-beam radiation sources, and plasma radiation sources.
- the vapor coater may, in addition to the one or more vapor coating processes, include other deposition processes.
- sputtering may precede or follow one or more vapor depositing steps to deposit layers such as, for example, metals, metal oxides, metal nitrides, and ceramics.
- Metals suitable for deposit by sputtering include, for example, aluminum, nickel, silver, chrome, copper, and combinations thereof.
- Metal oxides suitable for deposit by sputtering include, for example, alumina, magnesia, silica, zirconia, and titania.
- Suitable substrates 34 for use in the vapor coater described herein include flexible materials capable of roll-to-roll processing, such as paper, polymeric materials, metal foils, and combinations thereof.
- Suitable polymeric substrates include various polyolefins, e.g. polypropylene, various polyesters (e.g. polyethylene terephthalate, fluorene polyester), polymethylmethacrylate and other polymers such as polyethylene naphthalate, polyethersulphone, polyestercarbonate, polyetherimide, polyarylate, polyimide, vinyls, cellulose acetates, and fluoropolymers.
- the substrate 34 is a discrete part rather than a continuous roll of film.
- the discrete part may move past the vapor nozzle 42, or the discrete part may be stationary during the coating process.
- Suitable discrete substrates include silicon wafers, electronic or optical devices, glass, metal, and plastic parts.
- the present disclosure further relates to methods for processing vapor such as, for example, monitoring and controlling a flow of vapor generated by a vapor source.
- the methods for processing vapor may be carried out utilizing the system of FIG. 1 .
- the methods of the present disclosure may include, during normal operation, discharging vapor from the vapor source 4 into the outlet conduit 6a at an initial vapor flow rate.
- the initial flow rate of the vapor may be substantially equivalent to a current vapor generation rate of the vapor source 4 (e.g., the vapor generated by the vapor source 4 may be vented to the outlet conduit 6a).
- the vapor flow may then be transported, at the initial rate, through the outlet conduit 6a towards the vapor bypass control valve 16 and the feed control valve 18.
- the controller 22 via its coupling to one or more pressure sensors (e.g. pressure sensor 14), may monitor the pressure of the vapor at a position within the fluid pathway 6.
- the positions of the bypass control valve 16 and the feed control valve 18 may be such that, at the initial vapor flow rate, a pressure within the fluid pathway 6 is at a predetermined pressure setpoint. Assuming the positions of the bypass control valve 16 and the feed control valve 18 are maintained (and constant temperature), at the initial vapor flow rate, the pressure setpoint may be maintained within the fluid pathway 6. Moreover, the flow rates of vapor through the fluid pathway 6, including the vapor bypass conduit 6b and the vapor feed conduit 6c, may be substantially maintained at an initial value.
- the vapor generation rate of the vapor source 4 may fluctuate, thereby causing a momentary increase/decrease of the vapor flow rate and pressure within the outlet conduit 6a and, in turn, the bypass conduit 6b and the feed conduit 6c.
- the controller 22 may detect this variation in vapor flow conditions, for example, by signals received from the pressure sensor 14. Upon detection of the variation in flow conditions, the controller 22 may communicate instructions to either or both of the bypass control valve 16 and the feed control valve 18 to change their respective positions.
- the controller 22 may effect modulation of the positions of either or both of the bypass control valve 16 and the feed control valve 18 such that the pressure and flow rate of vapor passing through the feed conduit 6c is maintained (and thus the pressure and flow rate of vapor passing through the bypass conduit 6b is varied), despite the variation in vapor flow supplied by the vapor source 4.
- the controller 22 may accomplish this by, for example, modulating the positions of either or both of the bypass control valve 16 and the feed control valve 18 such that the a pressure of the vapor at a position within the flow system 6 is maintained at the predetermined pressure set point.
- the systems and methods of the present disclosure may allow for precise control of the pressure and flow rates of vapor passing through the bypass conduit 6b and the feed conduits 6c.
- the controller 22 may control the amounts and pressures of vapor passing through the fluid pathway 6, particularly, the bypass vapor and feed vapor conduits 6b, 6c, by modulating the position of the bypass control valve 16 only (and thus maintaining the feed control valve 18 in a fixed position).
- the controller 22 may modulate the position of the bypass control valve 16 such that the flow rate and pressure of the vapor passing through feed vapor conduit 6c is maintained.
- the controller 22 may accomplish this by, for example, modulating the positions of the bypass control valve 16 such that the pressure of the vapor flow at a position within the flow system 6 (e.g., pressure in outlet conduit 6a) is maintained at a predetermined pressure set point.
- the feed control valve 18 may be configured as an on/off valve or omitted.
- the methods of the present disclosure further include deposition of at least a portion of the vapor transported into the vacuum chamber 12 from the feed conduit 6c onto a substrate.
- the method may include unwinding the substrate 34 from the first roll 32 and onto the surface 43 of the process drum 36, such that the substrate 34 is in intimate contact with the drum surface 43.
- the substrate 32 may move past the vapor nozzle 42.
- the vapor nozzle 42 may project vapor, which is being supplied at a precisely controlled pressure and flow rate through the feed conduit 6c, onto the substrate 34 where it may deposited by, for example, condensation, CVD reaction, or plasma deposition.
- condensed fluid deposited on the substrate 34 may move past the curing source 44, which may apply a curing treatment to form a cured coating layer on the substrate.
- the coated substrate may then be re-wound on the second roll 38.
- the flow rate and pressure of the vapor being transported in the feed conduit 6c and, thus the deposition rate onto the substrate 34 may be precisely controlled irrespective of fluctuations or perturbations in the rate vapor is being supplied from the vapor source 4. Consequently, the vapor may be deposited onto the substrate 34 with very small variations in thickness over the length of the substrate 34.
- flow of vapor to the vapor coater may be eliminated during start up and shut down phases of the vapor source 4, thereby reducing the amount of substrate wasted during the start up and shut down phases.
- the methods of the present disclosure further include condensing at least a portion of the vapor transported into the vacuum chamber 12 from the feed conduit 6c.
- the method may include operating the condensing chamber at a pressure that is above the vapor pressure of any or all of the components of the vapor being transported from the vapor feed conduit 6c, condensing at least a portion of the vapor, and collecting the condensed vapor in a collector.
- the vapor processing systems and methods of the present disclosure may be carried at pressures within the fluid pathway 6 as low as 1000 mTorr, 100 mTorr, 1 mTorr, 0.1 mTorr, or even as low as as 0.001 mTorr. Pressures within the fluid pathway 6 may be as high as 1 Torr, 10 Torr, 100 Torr, 500 Torr, or even as high as 760 Torr.
- the vapor processing systems and methods of the present disclosure may be carried at vapor flow rates as low as 1 g/min, 0.1 g/min or even as low as 0.001 g/min.
- the vapor flow rates may be as high as 100 g/min, 1 kg/min, or even as high as 50 kg/min. In one embodiment, the vapor flow rate ranges from 1-50 g/min.
- the systems and methods of the present disclosure may be run at substrate line speeds as low as 10, 1, or even as low as 0.1 feet/minute (3.0, 0.3 or 0.03 m/min.).
- Substrate line speeds may be as high as 10, 100, or even as high as 2000 feet/minute (3.0, 30.5 or 609.6 m/min.). In one embodiment, the substrate line speed ranges from 10-300 feet/minute 3.0 - 304.8 m/min.).
- the systems and methods of the present disclosure may achieve coating thicknesses as low as 100, 10, or even as low as 0.1 nm.
- the coating thicknesses may be as high as 1, 25, or even as high as 50 ⁇ m. In one embodiment, the coating thicknesses may range from 0.1-10,000 nm, 1-5000 nm, or 10 - 1000 nm.
- the system and methods of the present disclosure allow for precise control of the pressures and flows of vapor entering the second vacuum chamber 12 and, thus in embodiments in which the second vacuum chamber 12 includes a vapor coater, precise control of the deposition rate of the vapor onto a substrate.
- Such precise control of deposition rate allows for the deposition of coatings having very small variations in thickness over the length of the substrate (i.e, the longitudinal dimension of the substrate).
- the systems and methods of the present disclosure may produce coated substrates having a variation in coating thickness of less than 20%, 5%, or even less than 1 % over lengths of substrate as high as 10, 1000, or even as high as 10,000 feet.
- the systems and methods of the present disclosure may be used to produce single or multi-layer films for applications such as optical films (reflectors, antireflection, absorbers, colored, optically variable, optical filters, optical interference filters, infrared reflectors), EMI (Electromagnetic Interference) filters, release coatings, transparent conductive films, capacitors, sensors, heat seal packaging, and display films.
- optical films reflectors, antireflection, absorbers, colored, optically variable, optical filters, optical interference filters, infrared reflectors), EMI (Electromagnetic Interference) filters, release coatings, transparent conductive films, capacitors, sensors, heat seal packaging, and display films.
- EMI Electromagnetic Interference
- barrier films and processes for the preparation of barrier films may be found, for example in the following patents and publications, incorporated by reference herein in their entireties: U.S. Pat. No. 5,440,446 (Shaw, et al. ); U.S. Pat. No. 5,725,909 (Shaw et al. ); U.S. Pat. No. 6,231,939 (Shaw et al. ); U.S. Pat. No. 6,420,003 (Shaw et al. ); U.S. Pat. No.
- barrier films are useful in the manufacture of many products, for example, as packaging for food and drugs and for the protection of environmentally sensitive electronic devices. Electronic devices that degrade when exposed to environmental moisture and oxygen are often protected from exposure by encasing the device in glass.
- a particularly useful application of barrier films made by the process disclosed herein includes protection for electronic display and signage devices, such as liquid crystal displays (LCDs), light emitting diodes (LEDs), organic light emitting diodes (OLEDs), light emitting polymers (LEPs), electrochromic, electrophoretic inks, inorganic electroluminescent devices, phosphorescent devices, and the like.
- barrier films produce at least in part by the systems and methods of the present disclosure include the protection of solar cells, photovoltaics, micro-electronics, organic micro-electronic devices (OMED), nano-devices, and nano-structures. Still other useful applications for such barrier films include bio-active devices such as those used in analytical measurements of bio-active materials, bio-active-micro-electronic devices used for analysis or separations.
- the barrier films may be flexible, making possible the production of flexible displays, electrical devices, and bio-active devices.
- a coating precursor solution of difunctional acrylate monomer (SR833S from Sartomer) and 250 ppm of a polymerization inhibitor (as described generally in U.S. Pub. 2010/0168434 , which is incorporated herein by reference in its entirety) was vaporized and coated at a coating width of 12.5 inches (318 mm) onto a substrate (2-mil (51 ⁇ m) PET, 14-inches (356 mm) wide) as follows.
- the coating precursor solution was placed in a temperature controlled supply tank and preheated to a temperature of 100°C.
- the coating precursor solution was fed, using a liquid flow controller, from the supply tank to a vapor source, as generally described in the present disclosure, at a rate of 8.0 ml/min (it is believed that the type of vapor source does not have an appreciable impact on coating performance).
- the vapor source was vented to a fluid conduit that separated the vapor flow into 2 channels: a bypass conduit connected to a condenser (operated at - 10°C) and a feed conduit connected to a vapor nozzle of a vapor coater (configured similarly to the vapor coater described with respect to FIG. 1 of the present disclosure).
- a vapor control valve (Baumann 81000 Mikroseal Control Valve with FieldVUE DCV2000 Digital Valve Controller from Emerson Process Management) was provided in the bypass conduit, and a shut-off valve was provided in the feed conduit.
- the fluid conduit, including the bypass and feed conduits, shut-off valve, and vapor control valve were heated to 181°C.
- the pressure of the vapor flow was measured in the fluid conduit (upstream of the bypass and feed conduits) using an MKS Baratron capacitance manometer. The manometer supplied feedback into the vapor control valve for process control.
- the coating precursor was discharged from the nozzle onto the substrate travelling at a constant line speed (16 feet per minute (4.9 m/min.)).
- the process drum temperature was maintained at 0°C.
- the substrate was subsequently passed under an electron beam operating at 9.0 kV and 4.0 mA to effect curing.
- the coating thickness was controlled using the vapor control valve to regulate the pressure of vapor in the fluid conduit.
- the vapor control valve was programmed to maintain a pressure setpoint in the fluid conduit, and different pressure setpoints were selected as listed in Table 1.
- the transmission and reflectance of the coating and the substrate were measured at a downstream location using an online optical spectrophotometer.
- Thickness was determined based upon the location of interference peak maxima and minima across the spectrum from 400 to 850 nm measured using the spectrophotomer. TABLE 1. VAPOR PRESSURE AND COATING THICKNESS Example Pressure Set Point (mtorr) Mean Coating Thickness (nm) 1 80 592 2 90 722 3 100 842 4 110 967 5 93 735
- a coating precursor solution of difunctional acrylate monomer (SR833S) and 250 ppm of a polymerization inhibitor was vaporized and coated at a coating width of 12.5 inches (318 mm) onto a substrate (2-mil (51 ⁇ m) PET, 14-inches (356 mm) wide) as in Examples 1-5, except that: 4 wt% of N-n-Butyl-Aza-2,2-Dimethoxysilacyclopentane (Gelest) was added to the precursor formulation; the electron beam was operated at 7.0 kV and 3.0 mA; and the vapor control valve was operated to maintain the pressure at 95 mtorr.
- Figure 3 is a plot of both vapor pressure and measured coated thickness, as a function of substrate web position in a longitudinal, or down-web direction, observed in Example 6.
- the mean thickness was 771 nm with a standard deviation of 14.8 nm.
- the coefficient of variance (COV) was 0.019, substantially less than the COV of the liquid flowrate into the vapor source (liquid flowrate mean 7.90 ml/min, standard deviation 0.334 ml/min, COV 0.042). This demonstrates that the vapor control valve substantially reduced the variation in the coating thickness relative to the variation in the input flow rate of the liquid.
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Claims (15)
- Système de traitement de vapeur (2) comprenant :une source de vapeur (4) pour produire une vapeur ;un conduit de sortie (6a) relié à la source de vapeur (4) pour transporter la vapeur à partir de la source de vapeur (4), dans lequel, en aval de la source de vapeur (4), le conduit de sortie (6a) se sépare en un conduit de dérivation de vapeur (6b) et un conduit d'alimentation de vapeur (6c) ;une première soupape de commande de vapeur disposée dans le conduit de dérivation (6b) ;une première chambre à vide (8) reliée au conduit de dérivation (6b) et disposée en aval de la première soupape de commande de vapeur ;une deuxième chambre à vide (12) reliée au conduit d'alimentation (6c) ; etun dispositif de commande (22) couplé fonctionnellement à la première soupape de commande de vapeur et configuré pour moduler l'écoulement de vapeur vers la première chambre à vide (8) de façon à commander la pression et le débit de vapeur passant à travers le conduit d'alimentation de vapeur (6c) lors d'une détection de variation de conditions d'écoulement de vapeur.
- Système (2) selon la revendication 1, comprenant en outre une deuxième soupape de commande de vapeur située dans le conduit d'alimentation (6c) en amont de la deuxième chambre à vide (12) et couplée fonctionnellement au dispositif de commande (22), et dans lequel le dispositif de commande (22) peut commander l'écoulement de vapeur à travers l'une ou/et l'autre des première et deuxième soupapes de commande de vapeur.
- Système selon la revendication 1, comprenant en outre une deuxième soupape située dans le conduit d'alimentation (6c) en amont de la deuxième chambre à vide (12) du type qui est normalement soit complètement ouverte soit complètement fermée.
- Système (2) selon l'une quelconque des revendications 1 à 3, dans lequel le système (2) comprend en outre un capteur de pression (14) couplé fonctionnellement au dispositif de commande (22), et configuré pour détecter la pression dans le conduit de sortie (6a), et dans lequel le dispositif de commande (22) est en outre configuré pour varier sélectivement la position d'une soupape de commande de vapeur ou de l'une et l'autre des soupapes de commande de vapeur selon le cas sur la base au moins en partie de la pression détectée par le capteur de pression (14).
- Système (2) selon la revendication 4, dans lequel la deuxième chambre à vide (12) comprend une coucheuse à vapeur pour déposer au moins une partie de la vapeur sur un substrat (34).
- Système (2) selon la revendication 5, dans lequel le substrat (34) est une bande de matériau et la coucheuse à vapeur comprend :au sein de la deuxième chambre à vide (12), un tambour rotatif (36) ayant une surface à température régulée (43) autour de laquelle la bande de substrat est déplacée ;une buse de distribution de vapeur (42) reliée au conduit d'alimentation de vapeur (6c), et disposée à proximité de la surface à température régulée (43) du tambour rotatif (36) ; et une pluralité de rouleaux (32, 38) configurés pour dérouler la bande de substrat, la faisant passer par-dessus la surface à température régulée (43) du tambour (36) et rebobinant la bande.
- Système (2) selon la revendication 6, dans lequel la coucheuse à vapeur comprend en outre une source de durcissement (44) configurée pour exposer la bande de substrat à un traitement délivré à partir de la source de durcissement (44) pour amorcer une polymérisation d'un monomère ou oligomère liquide déposé depuis la vapeur sur une surface du substrat (34), et dans lequel le traitement comprend un ou plusieurs parmi le groupe constitué de rayonnement ultraviolet, rayonnement de faisceau d'électrons, un rayonnement plasma, et de la chaleur.
- Système (2) selon la revendication 5, dans lequel la première chambre à vide (8) comprend un condenseur, le condenseur comprenant un collecteur pour collecter la vapeur condensée.
- Système (2) selon la revendication 5, dans lequel la vapeur comprend un ou plusieurs matériaux choisis dans le groupe constitué d'époxys, éthers vinyliques, (méth)acrylates, polymères contenant du fluor, polymères contenant du styrène, acétylènes, polyamides, acrylamides, parylènes, cires, fluoropolyéthers, polyamines, diallyldiphénylsilanes, alcoxydes de métal, alkyles de métal, silicones, huiles, teintures, protéines, peptides, polypeptides, lipides, glucides, enzymes, acides nucléiques, acides polynucléiques, médicaments, métabolites de médicament, et des combinaisons de ceux-ci.
- Procédé de traitement d'une vapeur comprenant :la décharge d'une vapeur à partir d'une source de vapeur (4) dans un conduit relié à la source de vapeur (4), dans lequel, en aval de la source de vapeur (4), le conduit se sépare en deux conduits, un conduit de dérivation de vapeur (6b) et un conduit d'alimentation de vapeur (6c) ;la fourniture d'une première soupape de commande de vapeur disposée dans le conduit de dérivation (6b), d'un dispositif de commande (22) relié fonctionnellement à la première soupape de commande de vapeur, d'une première chambre à vide (8) reliée au conduit de dérivation (6b) et disposée en aval de la première soupape de commande de vapeur, et d'une deuxième chambre à vide (12) reliée au conduit d'alimentation (6c) ; etla modulation de l'écoulement de vapeur passant à travers le conduit de dérivation (6b) par manipulation de la première soupape de commande de vapeur de façon à commander la pression et le débit de vapeur passant à travers le conduit d'alimentation de vapeur (6c) lors d'une détection de variation de conditions d'écoulement de vapeur.
- Procédé selon la revendication 10, dans lequel la deuxième chambre à vide (12) comprend une coucheuse à vapeur, la coucheuse à vapeur comprenant une surface à température régulée (43), une buse de distribution de vapeur (42) reliée au conduit d'alimentation de vapeur (6c) et disposée à proximité de la surface à température régulée (43) et une pluralité de rouleaux (32, 38) configurés pour faire passer une bande de substrat autour de la surface à température régulée (43) ; et le procédé comprend en outre les étapes de décharge de la vapeur à partir de la buse de distribution (42) ; et
de dépôt de la vapeur sur une surface du substrat bande pour former un revêtement. - Procédé selon la revendication 11, dans lequel la vapeur est déposée sur la surface de la bande de substrat par un ou plusieurs procédés choisis dans le groupe constitué de condensation, dépôt chimique en phase vapeur et dépôt au plasma.
- Procédé selon la revendication 11, comprenant en outre un durcissement du revêtement.
- Procédé selon la revendication 10, dans lequel les conditions de température et/ou de pression de fonctionnement des première et deuxième chambres à vide (8, 12) sont différentes, et les conditions dans la première chambre à vide (8) amènent un ou plusieurs composants de la vapeur à être condensés et collectés dans la première chambre à vide (8).
- Procédé selon la revendication 10, comprenant en outre l'ajout à la vapeur dans le conduit d'un gaz choisi parmi azote, argon, hélium, néon, oxygène, ozone, oxyde nitreux, hydrogène, sulfure d'hydrogène, tétrafluorure de carbone, méthane, ammoniac et des combinaisons de ceux-ci.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US201161515399P | 2011-08-05 | 2011-08-05 | |
PCT/US2012/049146 WO2013022669A2 (fr) | 2011-08-05 | 2012-08-01 | Systèmes et procédés pour traiter la vapeur |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2739765A2 EP2739765A2 (fr) | 2014-06-11 |
EP2739765A4 EP2739765A4 (fr) | 2015-03-25 |
EP2739765B1 true EP2739765B1 (fr) | 2019-01-16 |
Family
ID=47669160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP12821620.7A Active EP2739765B1 (fr) | 2011-08-05 | 2012-08-01 | Systèmes et procédés pour traiter de la vapeur |
Country Status (7)
Country | Link |
---|---|
US (2) | US9302291B2 (fr) |
EP (1) | EP2739765B1 (fr) |
JP (1) | JP6559423B2 (fr) |
KR (1) | KR102040758B1 (fr) |
CN (1) | CN103732792B (fr) |
BR (1) | BR112014002320A2 (fr) |
WO (1) | WO2013022669A2 (fr) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021050395A1 (fr) * | 2019-09-10 | 2021-03-18 | Applied Materials, Inc. | Procédés et appareil de distribution de vapeur |
DE102020122800A1 (de) | 2020-09-01 | 2022-03-03 | Apeva Se | Vorrichtung zum Abscheiden von OLED-Schichten mit einer Run-/Vent-Leitung |
Also Published As
Publication number | Publication date |
---|---|
JP6559423B2 (ja) | 2019-08-14 |
CN103732792B (zh) | 2016-06-29 |
CN103732792A (zh) | 2014-04-16 |
KR102040758B1 (ko) | 2019-11-05 |
EP2739765A4 (fr) | 2015-03-25 |
EP2739765A2 (fr) | 2014-06-11 |
WO2013022669A3 (fr) | 2013-04-25 |
BR112014002320A2 (pt) | 2017-03-01 |
JP2014521839A (ja) | 2014-08-28 |
US20140178567A1 (en) | 2014-06-26 |
WO2013022669A2 (fr) | 2013-02-14 |
US20160168702A1 (en) | 2016-06-16 |
KR20140064829A (ko) | 2014-05-28 |
US9302291B2 (en) | 2016-04-05 |
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