EP2698808A4 - Siliziumcarbid-halbleiterelement und herstellungsverfahren dafür - Google Patents

Siliziumcarbid-halbleiterelement und herstellungsverfahren dafür

Info

Publication number
EP2698808A4
EP2698808A4 EP11863270.2A EP11863270A EP2698808A4 EP 2698808 A4 EP2698808 A4 EP 2698808A4 EP 11863270 A EP11863270 A EP 11863270A EP 2698808 A4 EP2698808 A4 EP 2698808A4
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
silicon carbide
carbide semiconductor
producing same
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP11863270.2A
Other languages
English (en)
French (fr)
Other versions
EP2698808A1 (de
EP2698808B1 (de
Inventor
Jun-Ichi Ohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Publication of EP2698808A1 publication Critical patent/EP2698808A1/de
Publication of EP2698808A4 publication Critical patent/EP2698808A4/de
Application granted granted Critical
Publication of EP2698808B1 publication Critical patent/EP2698808B1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0495—Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4827—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
EP11863270.2A 2011-04-11 2011-09-09 Herstellungsverfahren eines siliziumcarbid-halbleiterelements Active EP2698808B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011086984 2011-04-11
PCT/JP2011/070591 WO2012140795A1 (ja) 2011-04-11 2011-09-09 炭化珪素半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
EP2698808A1 EP2698808A1 (de) 2014-02-19
EP2698808A4 true EP2698808A4 (de) 2015-02-18
EP2698808B1 EP2698808B1 (de) 2018-12-05

Family

ID=47008994

Family Applications (2)

Application Number Title Priority Date Filing Date
EP11863270.2A Active EP2698808B1 (de) 2011-04-11 2011-09-09 Herstellungsverfahren eines siliziumcarbid-halbleiterelements
EP11863268.6A Active EP2698807B1 (de) 2011-04-11 2011-09-09 Verfahren zur herstellung eines halbleiterbauelements aus siliciumcarbid

Family Applications After (1)

Application Number Title Priority Date Filing Date
EP11863268.6A Active EP2698807B1 (de) 2011-04-11 2011-09-09 Verfahren zur herstellung eines halbleiterbauelements aus siliciumcarbid

Country Status (5)

Country Link
US (2) US9224645B2 (de)
EP (2) EP2698808B1 (de)
JP (2) JP5427980B2 (de)
CN (2) CN103140916B (de)
WO (2) WO2012140795A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012140795A1 (ja) * 2011-04-11 2012-10-18 新電元工業株式会社 炭化珪素半導体装置及びその製造方法
DE102012213077A1 (de) * 2012-07-25 2014-01-30 Robert Bosch Gmbh Verfahren zum Kontaktieren eines Halbleitermaterials mit einer Kontaktlage
JP6222771B2 (ja) * 2013-11-22 2017-11-01 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置の製造方法
CN204966510U (zh) 2014-06-20 2016-01-13 意法半导体股份有限公司 宽带隙高密度半导体开关器件
JP6398744B2 (ja) 2015-01-23 2018-10-03 三菱電機株式会社 半導体デバイス用基板の製造方法
JP2016219475A (ja) * 2015-05-15 2016-12-22 トヨタ自動車株式会社 炭化珪素半導体装置の製造方法
JP6076548B1 (ja) * 2015-12-11 2017-02-08 新電元工業株式会社 炭化珪素半導体装置の製造方法、半導体基体の製造方法、炭化珪素半導体装置及び炭化珪素半導体装置の製造装置
JP6584966B2 (ja) * 2016-01-12 2019-10-02 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び昇降機
CN105514178A (zh) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 一种沟槽式mos肖特基二极管
CN108717945B (zh) * 2018-05-24 2022-01-07 西安理工大学 一种具有NiO/SiC异质发射结的SiC光触发晶闸管
CN111276395A (zh) * 2020-02-19 2020-06-12 华芯威半导体科技(北京)有限责任公司 一种碳化硅器件原料的制造方法及使用该原料制备的碳化硅器件
DE102022209805A1 (de) 2022-09-19 2024-03-21 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zum Erzeugen eines elektrischen Kontaktes, Halbleiteranordnung und Halbleiterbauelement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217129A (ja) * 2001-01-18 2002-08-02 New Japan Radio Co Ltd シリコンカーバイド半導体装置の製造方法
US7141498B2 (en) * 2005-03-14 2006-11-28 Denso Corporation Method of forming an ohmic contact in wide band semiconductor
JP2009010096A (ja) * 2007-06-27 2009-01-15 Nissan Motor Co Ltd 炭化珪素半導体装置とその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3117446B2 (ja) 1989-06-15 2000-12-11 株式会社半導体エネルギー研究所 酸化物導電膜の成膜加工方法
US6051283A (en) * 1998-01-13 2000-04-18 International Business Machines Corp. Microwave annealing
JP2000101064A (ja) * 1998-09-25 2000-04-07 Sanyo Electric Co Ltd 電極、ＳｉＣの電極及びＳｉＣデバイス
US6207565B1 (en) * 2000-01-13 2001-03-27 Vlsi Technology, Inc Integrated process for ashing resist and treating silicon after masked spacer etch
JP3650727B2 (ja) * 2000-08-10 2005-05-25 Ｈｏｙａ株式会社 炭化珪素製造方法
WO2002090615A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation Duo-step plasma cleaning of chamber residues
JP3871607B2 (ja) * 2001-12-14 2007-01-24 松下電器産業株式会社 半導体素子およびその製造方法
TW591217B (en) * 2003-07-17 2004-06-11 South Epitaxy Corp UV detector
JP2006024880A (ja) * 2004-06-09 2006-01-26 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20070138482A1 (en) * 2005-12-08 2007-06-21 Nissan Motor Co., Ltd. Silicon carbide semiconductor device and method for producing the same
KR100860367B1 (ko) * 2006-08-21 2008-09-25 제일모직주식회사 금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
JP2008053291A (ja) 2006-08-22 2008-03-06 Rohm Co Ltd ＳｉＣ半導体素子およびその製造方法
JP5014749B2 (ja) * 2006-11-27 2012-08-29 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP5282382B2 (ja) * 2007-08-17 2013-09-04 富士電機株式会社 炭化珪素半導体装置、その製造方法および炭化珪素デバイス
JP2009194216A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 半導体装置の製造方法
JP5369762B2 (ja) * 2009-03-02 2013-12-18 株式会社デンソー 炭化珪素半導体装置の製造方法
US20120161098A1 (en) * 2009-08-20 2012-06-28 Nec Corporation Substrate, manufacturing method of substrate, semiconductor element, and manufacturing method of semiconductor element
WO2012140795A1 (ja) * 2011-04-11 2012-10-18 新電元工業株式会社 炭化珪素半導体装置及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217129A (ja) * 2001-01-18 2002-08-02 New Japan Radio Co Ltd シリコンカーバイド半導体装置の製造方法
US7141498B2 (en) * 2005-03-14 2006-11-28 Denso Corporation Method of forming an ohmic contact in wide band semiconductor
JP2009010096A (ja) * 2007-06-27 2009-01-15 Nissan Motor Co Ltd 炭化珪素半導体装置とその製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ALEKSANDROV O V ET AL: "Simulation of interaction between nickel and silicon carbide during the formation of ohmic contacts", SEMICONDUCTORS, NAUKA/INTERPERIODICA, MO, vol. 43, no. 7, 11 July 2009 (2009-07-11), pages 885 - 891, XP019734948, ISSN: 1090-6479, DOI: 10.1134/S1063782609070100 *
NIKITINA I ET AL: "Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 97, no. 8, 6 April 2005 (2005-04-06), pages 083709-1 - 083709-7, XP012071079, ISSN: 0021-8979, DOI: 10.1063/1.1872200 *
See also references of WO2012140795A1 *

Also Published As

Publication number Publication date
US20130306992A1 (en) 2013-11-21
CN103140916A (zh) 2013-06-05
EP2698807B1 (de) 2015-09-23
EP2698808A1 (de) 2014-02-19
WO2012140795A1 (ja) 2012-10-18
JPWO2012140794A1 (ja) 2014-07-28
CN103229275A (zh) 2013-07-31
EP2698807A4 (de) 2014-09-10
US9005462B2 (en) 2015-04-14
CN103140916B (zh) 2015-06-10
CN103229275B (zh) 2015-10-07
JP5427980B2 (ja) 2014-02-26
EP2698808B1 (de) 2018-12-05
US9224645B2 (en) 2015-12-29
EP2698807A1 (de) 2014-02-19
JP5415650B2 (ja) 2014-02-12
US20130244428A1 (en) 2013-09-19
WO2012140794A1 (ja) 2012-10-18
JPWO2012140795A1 (ja) 2014-07-28

Similar Documents

Publication Publication Date Title
EP2863440A4 (de) Siliciumcarbid-halbleiterbauelement und verfahren zur herstellung davon
EP2863417A4 (de) Siliciumcarbid-halbleiterbauelement und verfahren zur herstellung davon
EP2725622A4 (de) Siliziumcarbid-isoliertes gate-halbleiterelement und herstellungsverfahren dafür
EP2735630A4 (de) Epitaktischer siliciumcarbidwafer und herstellungsverfahren dafür sowie vorrichtung zur herstellung epitaktischer siliciumcarbidwafer
EP2669951A4 (de) Herstellungsverfahren für ein halbleiterbauelement und halbleiterbauelement
EP2796594A4 (de) Verfahren zur herstellung von gruppe-iii-nitridkristallen, gruppe-iii-nitridkristalle und halbleitervorrichtung
HK1206147A1 (en) Method for producing semiconductor device, and semiconductor device
EP2698808A4 (de) Siliziumcarbid-halbleiterelement und herstellungsverfahren dafür
EP2741336A4 (de) Halbleiterbauelement und herstellungsverfahren dafür
EP2546867A4 (de) Siliciumcarbid-halbleitervorrichtung und herstellungsverfahren dafür
EP2672517A4 (de) Halbleitervorrichtung und herstellungsverfahren dafür
EP2770537A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2701201A4 (de) Halbleitervorrichtung und herstellungsverfahren dafür
EP2927960A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2804215A4 (de) Herstellungsverfahren für ein siliciumcarbidhalbleiterbauelement
EP2757588A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2722892A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2927962A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2927939A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2717318A4 (de) Siliciumcarbid-halbleiterbauelement und herstellungsverfahren dafür
EP2660366A4 (de) Siliciumcarbidsubstrat, halbleiterbauelement, verfahren zur herstellung des siliciumcarbidsubstrats und verfahren zur herstellung des halbleiterbauelements
EP2530718A4 (de) Siliciumcarbidhalbleiterbauelement und herstellungsverfahren dafür
EP2667414A4 (de) Verfahren zur herstellung eines halbleiterbauelements aus siliciumcarbid
EP3032574A4 (de) Siliciumcarbidhalbleitersubstrat, verfahren zur herstellung davon und verfahren zur herstellung eines siliciumcarbidhalbleiterbauelements
EP2927964A4 (de) Siliciumcarbid-halbleiterbauelement und verfahren zur herstellung davon

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130510

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20150116

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/28 20060101ALI20150112BHEP

Ipc: H01L 21/04 20060101AFI20150112BHEP

Ipc: H01L 29/66 20060101ALI20150112BHEP

Ipc: H01L 21/3065 20060101ALI20150112BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20170113

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602011054655

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0021280000

Ipc: H01L0021040000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/3065 20060101ALI20180611BHEP

Ipc: H01L 21/04 20060101AFI20180611BHEP

Ipc: H01L 21/336 20060101ALI20180611BHEP

Ipc: H01L 21/329 20060101ALI20180611BHEP

Ipc: H01L 21/28 20060101ALI20180611BHEP

Ipc: H01L 21/331 20060101ALI20180611BHEP

INTG Intention to grant announced

Effective date: 20180626

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1074107

Country of ref document: AT

Kind code of ref document: T

Effective date: 20181215

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602011054655

Country of ref document: DE

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20181205

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1074107

Country of ref document: AT

Kind code of ref document: T

Effective date: 20181205

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190305

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190305

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190306

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: AL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190405

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20190405

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602011054655

Country of ref document: DE

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

26N No opposition filed

Effective date: 20190906

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LI

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190930

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190930

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190909

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190909

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20190930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190930

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20190909

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190909

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20190930

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO

Effective date: 20110909

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20181205

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20230920

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: IT

Payment date: 20230927

Year of fee payment: 13