EP2660036A4 - METHOD FOR MANUFACTURING NANOIMPRESSION MOLD, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE USING THE NANOIMPRESSION MOLD MADE THEREBY AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY - Google Patents

METHOD FOR MANUFACTURING NANOIMPRESSION MOLD, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE USING THE NANOIMPRESSION MOLD MADE THEREBY AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY

Info

Publication number
EP2660036A4
EP2660036A4 EP11854018.6A EP11854018A EP2660036A4 EP 2660036 A4 EP2660036 A4 EP 2660036A4 EP 11854018 A EP11854018 A EP 11854018A EP 2660036 A4 EP2660036 A4 EP 2660036A4
Authority
EP
European Patent Office
Prior art keywords
emitting diode
manufactured
light
nano
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11854018.6A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP2660036A1 (en
Inventor
Jong Lam Lee
Jun Ho Son
Yang Hee Song
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Academy Industry Foundation of POSTECH
Original Assignee
Academy Industry Foundation of POSTECH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Academy Industry Foundation of POSTECH filed Critical Academy Industry Foundation of POSTECH
Publication of EP2660036A1 publication Critical patent/EP2660036A1/en
Publication of EP2660036A4 publication Critical patent/EP2660036A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
EP11854018.6A 2010-12-30 2011-10-28 METHOD FOR MANUFACTURING NANOIMPRESSION MOLD, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE USING THE NANOIMPRESSION MOLD MADE THEREBY AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY Withdrawn EP2660036A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100139089A KR101215299B1 (ko) 2010-12-30 2010-12-30 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드
PCT/KR2011/008157 WO2012091270A1 (ko) 2010-12-30 2011-10-28 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오

Publications (2)

Publication Number Publication Date
EP2660036A1 EP2660036A1 (en) 2013-11-06
EP2660036A4 true EP2660036A4 (en) 2016-01-20

Family

ID=46383315

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11854018.6A Withdrawn EP2660036A4 (en) 2010-12-30 2011-10-28 METHOD FOR MANUFACTURING NANOIMPRESSION MOLD, METHOD FOR MANUFACTURING LIGHT EMITTING DIODE USING THE NANOIMPRESSION MOLD MADE THEREBY AND LIGHT-EMITTING DIODE MANUFACTURED THEREBY

Country Status (6)

Country Link
US (1) US8957449B2 (ja)
EP (1) EP2660036A4 (ja)
JP (1) JP5632081B2 (ja)
KR (1) KR101215299B1 (ja)
CN (1) CN103097113B (ja)
WO (1) WO2012091270A1 (ja)

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* Cited by examiner, † Cited by third party
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KR20140100115A (ko) * 2013-02-05 2014-08-14 삼성전자주식회사 반도체 발광 소자
CN104241455A (zh) * 2013-06-11 2014-12-24 展晶科技(深圳)有限公司 Led芯片及其制造方法
KR101535852B1 (ko) * 2014-02-11 2015-07-13 포항공과대학교 산학협력단 나노구조체 전사를 이용한 발광다이오드 제조방법과 그 발광다이오드
KR101606338B1 (ko) * 2014-04-22 2016-03-24 인트리 주식회사 나노구조의 패턴을 구비한 광투과성 도전체를 제조하기 위한 포토마스크 및 그 제조방법
KR20160092635A (ko) 2015-01-28 2016-08-05 포항공과대학교 산학협력단 나노 임프린트 몰드 제조방법, 이 방법에 의해 제조된 나노 임프린트 몰드를 이용한 발광다이오드 제조방법 및 이 방법에 의해 제조된 발광다이오드
CN111933769B (zh) * 2020-08-19 2023-04-07 广东技术师范大学 一种周期性的折射率分层渐变的纳米结构led的制备方法

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US20080131692A1 (en) * 2006-12-04 2008-06-05 Liquidia Technologies, Inc. Methods and materials for fabricating laminate nanomolds and nanoparticles therefrom
US20080283859A1 (en) * 2007-05-18 2008-11-20 Delta Electronics, Inc. Light-emitting diode apparatus and manufacturing method thereof
US20090057700A1 (en) * 2005-04-20 2009-03-05 Yong Sung Jin Light emitting element and a manufacturing method thereof
US20090072259A1 (en) * 2007-09-13 2009-03-19 Shih-Peng Chen Light-emitting diode apparatus and manufacturing method thereof
US20100075114A1 (en) * 2006-12-13 2010-03-25 National Institute Of Advanced Industrial Science And Technology Mold for optical element, having nanostructure, mold for nanostructure, method for manufacturing the mold, and optical element

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JP2005268601A (ja) * 2004-03-19 2005-09-29 Sumitomo Chemical Co Ltd 化合物半導体発光素子
TWM277111U (en) * 2004-06-18 2005-10-01 Super Nova Optoelectronics Cor Vertical electrode structure for white-light LED
JP2007019318A (ja) * 2005-07-08 2007-01-25 Sumitomo Chemical Co Ltd 半導体発光素子、半導体発光素子用基板の製造方法及び半導体発光素子の製造方法
KR20070063731A (ko) * 2005-12-15 2007-06-20 엘지전자 주식회사 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자
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KR20080000884A (ko) * 2006-06-28 2008-01-03 삼성전기주식회사 질화갈륨계 발광 다이오드 소자 및 그 제조방법
US20080131692A1 (en) * 2006-12-04 2008-06-05 Liquidia Technologies, Inc. Methods and materials for fabricating laminate nanomolds and nanoparticles therefrom
US20100075114A1 (en) * 2006-12-13 2010-03-25 National Institute Of Advanced Industrial Science And Technology Mold for optical element, having nanostructure, mold for nanostructure, method for manufacturing the mold, and optical element
US20080283859A1 (en) * 2007-05-18 2008-11-20 Delta Electronics, Inc. Light-emitting diode apparatus and manufacturing method thereof
US20090072259A1 (en) * 2007-09-13 2009-03-19 Shih-Peng Chen Light-emitting diode apparatus and manufacturing method thereof

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See also references of WO2012091270A1 *

Also Published As

Publication number Publication date
EP2660036A1 (en) 2013-11-06
JP5632081B2 (ja) 2014-11-26
JP2013539419A (ja) 2013-10-24
KR20120077209A (ko) 2012-07-10
US20130126929A1 (en) 2013-05-23
CN103097113A (zh) 2013-05-08
US8957449B2 (en) 2015-02-17
KR101215299B1 (ko) 2012-12-26
CN103097113B (zh) 2016-04-20
WO2012091270A1 (ko) 2012-07-05

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