EP2636062A2 - Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température - Google Patents

Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température

Info

Publication number
EP2636062A2
EP2636062A2 EP11810558.4A EP11810558A EP2636062A2 EP 2636062 A2 EP2636062 A2 EP 2636062A2 EP 11810558 A EP11810558 A EP 11810558A EP 2636062 A2 EP2636062 A2 EP 2636062A2
Authority
EP
European Patent Office
Prior art keywords
temperature sensor
sintering
sintered
power semiconductor
electrical contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11810558.4A
Other languages
German (de)
English (en)
Inventor
Ronald Eisele
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Danfoss Silicon Power GmbH
Original Assignee
Danfoss Silicon Power GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=45497593&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP2636062(A2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Danfoss Silicon Power GmbH filed Critical Danfoss Silicon Power GmbH
Publication of EP2636062A2 publication Critical patent/EP2636062A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the invention relates to a power semiconductor module, which consists of a common arrangement of sinterable components such as semiconductors, temperature probes, series resistors for a chip, resistors and capacitance elements, shunt resistors in particular on existing power conductors according to the preamble of the main claim and a method for producing a sintered such module with temperature sensor.
  • the aim is to obtain a method for producing a sintered power semiconductor module by jointly sintering a passive component with an active component.
  • circuit breakers which are attached to a base plate or heat sink via an intermediate substrate. Internal connections are realized with so-called bonding wires.
  • a plastic housing accommodates connections that connect the module to outside leads.
  • power modules also usually consist of at least one semiconductor (transistor, diode or comparable elements).
  • the power inductor (s) are preferably joined by sintering silver layers onto a substrate.
  • Such a low-temperature compound is mentioned in DE 10 2008 035 93 AI as an alternative.
  • the substrate can be embodied here as a metallic stamped grid with a partial plastic coating or as a ceramic printed circuit board with one- or two-sided metal coverings for current and heat transport.
  • other passive components such as
  • Predominant designs here are the surface mounted SMD components (surface mounted devices), which can be bonded to the substrate as well as soldered.
  • the geometries of these passive components are adapted to these production techniques and preferably use the meniscus formation of the bonding adhesive (conductive adhesive) or the soft solder for electrical contact formation and mechanical fixation.
  • the components are usually cylindrical, but at least provided with undercuts, which can lead to damage or destruction during the pressing process of sintering.
  • the contacts of the SMD components are generally metallizations on the two end caps, each circumferential. A thermally contacting and at the same time potential-free installation is not possible.
  • a relatively thick conductor track layer is present, which are separated in conventional SMD components by an (etching) trench of the active device.
  • the trenches of the power conductor tracks typically have a width of about 60 ⁇ to ⁇ and partially over it.
  • the thickness 380 ⁇ also a trench width of at least 380 ⁇ to 600 ⁇ .
  • SMD components require separate island pads within the surfaces of the power traces. This reduces the required current carrying cross-section and the cherriessp Dahlphenol, since the heat flow is stopped at the etch trench. An additional, cost-intensive substrate area is required.
  • the islanding of the highly conductive conductor in the printed conductor layout represents additional thermal insulation and unduly reduces the response speed and the desired parallel operation of the measured temperature with the transistor temperature.
  • a temperature sensor e.g. to place one with a temperature sensitive platinum metal resistor.
  • a temperature limit e.g. 180 ° C
  • the semiconductor in operation is acutely threatened by overheating and may lose its function.
  • the controlled current through the semiconductor is typically reduced to avoid thermal damage.
  • the correct determination of the temperature limit by the temperature sensor therefore depends on three boundary conditions:
  • the temperature sensor must be mounted as close as possible to the semiconductor and
  • a ceramic layer or ceramic disc carries the temperature sensor (e.g.
  • Ceramics offer the best thermal conductivity among the known electrical insulating materials.
  • So z. B. aluminum oxide (A1 2 0 3 ) has a thermal conductivity of about 36-39 W / mK and aluminum nitride (A1N) even a thermal conductivity of about 180-220 W / mK.
  • these insulating materials are not only high-voltage as ceramic, but also much more thermally conductive than organic carrier and thus preferably used as a carrier of the Pt resistor with sintered layer.
  • planar components in which at least the underside intended for sintering is plane, at least partially metallised typically NiAu,
  • NiPdAu, AgPd, AuPd or Ag and conductively connected to the wiring surface by means of a sintered layer can be arranged in the same manner. It is already possible to lead out only one electrical functional contact on the surface opposite the sintered surface as a metallic contact surface. The always required second electrical functional contact is then produced by the sinterable underside (or a part of the underside) of the component to the interconnect substrate.
  • the top-side contacting takes place here, for example, by wire bonding or soldering or sintering or pressure contacting.
  • both electrical function contacts are kept floating relative to the sintered surface and placed on the top of the device (this is the sintering surface opposite side)
  • an electrical contact can be made, in turn, by selectively wire bonding, soldering, sintering or pressure contacting or ultrasonic welding is realized.
  • the contacting is also on laterally provided at the edge of the top contacts in question.
  • This arrangement consists of the two upper functional contacts and the functional surface between the contacts and an electrically insulating carrier material (ceramic, single crystals such as sapphire or silicon). It gives e.g. following layers construction from top to bottom of a resistance of the cuboid:
  • DCB ceramic core circuit boards
  • IMS metal core circuit boards
  • organic circuit carriers for example epoxy resin core or polyimide core printed circuit boards
  • the passive components have resistive, capacitive, inductive or temperature-resistive properties. These can be realized in special layers or layer sequences on insulating carrier materials (eg metallic layers for resistance formation (Ni, Pt) or as a function in one volume (eg oxide metallic bodies with thermo-resistive properties, thermistor, NTC, PTC or resistive platinum metal resistor) For suitability as a sinterable, passive component, therefore, the geometric design must be designed as a potential-free arrangement (both function contacts above). Further features and advantages of the invention will become apparent from preferred embodiment with reference to the accompanying drawings.
  • insulating carrier materials eg metallic layers for resistance formation (Ni, Pt) or as a function in one volume (eg oxide metallic bodies with thermo-resistive properties, thermistor, NTC, PTC or resistive platinum metal resistor)
  • Figure 4 shows an embodiment of the invention, in which a double
  • Bondpad is located on the top.
  • the placement of such devices on the substrate can be done according to various criteria. For the best possible temperature measurement of the junction temperature with an external sensor, the shortest possible heat path between the semiconductor and the temperature sensor should be found:
  • the temperature sensor may be e.g. Pt type sensor (e.g., Pt-100) consisting of a ceramic substrate with sinterable metallization at the bottom, a platinum functional layer and two contact surfaces at the top.
  • Pt type sensor e.g., Pt-100
  • NTC thermistor type
  • sinterable metallization at the bottom, for example a ceramic insulation layer.
  • a thermistor or NTC is a highly non-linear temperature sensor made up of temperature-variable resistive oxides. This is currently delivered but not insulating on a ceramic. Nevertheless, this variant of a thermistor should be within the scope of the appended claims.
  • thermocouples are known, which work as temperature sensors especially after the Seebeck effect (English: thermo couple). These are also not available with insulating ceramic layer. Alternatively, a placement of the temperature sensor on the semiconductor can take place. This ensures a very short thermal path between the semiconductor barrier and the temperature sensor. This very close thermal connection has advantages for the rapid detection of thermal overloads.
  • FIG. 1 the embodiment of a sinterable temperature sensor of the type Pt-1000 is exemplified. As explained above, this is a potential-free version with two electrical function contacts pointing upwards.
  • Sinterable metallization 10 typically NiAu, NiPdAu, AgPd, AuPd or Ag applied by chemical or physical methods
  • insulating ceramic body 12 eg A1 2 0 3
  • top center conductor tracks 14 made of Pt or alternatively Ni and two contact fields 16, 18 laterally for further electrical connection (eg wire bonding) from eg AgPd or AuPd.
  • FIG. 1 Sinterable metallization 10
  • NiAu typically NiPdAu, AgPd, AuPd or Ag applied by chemical or physical methods
  • insulating ceramic body 12 eg A1 2 0 3
  • top center conductor tracks 14 made of Pt or alternatively Ni and two contact fields 16, 18 laterally for further electrical connection (eg wire bonding) from eg AgPd or AuPd.
  • FIG. 2 shows, by way of example, a complete, sintered assembly consisting of a DCB substrate, a transistor and a temperature sensor 20 (as described in FIG. 1).
  • the module already has a contact wiring through bonding wires 24, which, however, is generated only after sintering.
  • the temperature sensor 20 in FIG. 2 is floating on the current-carrying conductor track 22 and in this way has a very good thermal contact due to the silver sintering and at the same time a high electrical insulation by the nonconducting conductor Ceramic body 12. The disadvantageous by additional space requirement and high thermal resistance generation of printed circuit islands for the temperature sensor is eliminated.
  • FIG. 3 a shows a general embodiment of a sinterable passive component. It is the solution according to case 1 in floating version with the electrical contacts 10, 32 respectively below and above, which occupy at least part of the surface.
  • the body 30 in the middle describes the functional volume, for example with the passive electrical functions:
  • Thermally sensitive resistor temperature sensor as NTC, PTC, Ptxx, Nixx
  • thermally insensitive metal alloy for example shunt made of a copper-manganese-nickel alloy
  • Sinterable metallization 10 typically NiAu, NiPdAu, AgPd, AuPd or Ag applied by chemical or physical methods
  • functional body 30 above a contact pad 32 covering all or part of the top and for further electrical connection (eg wire bonding) is intended, consisting of eg AgPd or AuPd.
  • FIG. 3b shows the option of stackable resistors for achieving multiples of the basic resistance.
  • the practical benefit would be the simple availability of e.g. Chip series resistors in stepped sizes.
  • Such chip resistors are e.g. used to influence the switching speed of MOSFET transistors by the size of the resistance value. Therefore, such a resulting scalability is an advantage of this technique and this design.
  • FIG. 4 shows a solution with the double bond pad on the upper side.
  • Sinterable metallization 10 typically NiAu, NiPdAu, AgPd, AuPd or Ag applied by means of chemical mixer or physical methods
  • functional body 30 above two contact fields 16, 18, separated by the surface of the contact body, partially cover the top and which is intended for further electrical connection (eg wire bonding), consisting of eg AgPd or AuPd.
  • Another embodiment of the invention may be the combination of a plurality of sinterable devices first on a common carrier substrate (e.g., ceramic).
  • a common carrier substrate e.g., ceramic
  • several components form a common electrical function, e.g. an R-C member for a limiter function of voltage spikes.
  • the components on the top side of the carrier substrate are then connected by conductor tracks.
  • the support substrate additionally has metallized surfaces for bonding and soldering, e.g. in the manner of a ceramic hybrid circuit.
  • the carrier substrate is then in turn sinterable metallized on the underside and is sintered as a whole with the interconnected components thereon to the substrate of the power assembly.
  • Such an assembly is also suitable for high temperatures by the choice of a sintered connection.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thermistors And Varistors (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)

Abstract

L'invention concerne un procédé de fabrication de composants électriques frittables pour le frittage commun avec des composants actifs. Selon le procédé, les composants sous forme plane sont pourvus d'au moins un côté inférieur plan destiné au frittage, et une zone de contact électrique est présente sous forme de surface de contact métallique sur la surface opposée à la surface de frittage, pouvant être mise en contact sur le côté supérieur par un procédé courant du groupe: connexion des fils, soudage, frittage ou métallisation des trous. Le composant est une sonde de température dont la surface inférieure comporte une métallisation frittable sur un corps céramique, le corps céramique comportant deux surfaces de contact électriques pour la connexion électrique ultérieure.
EP11810558.4A 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température Withdrawn EP2636062A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010050315.0A DE102010050315C5 (de) 2010-11-05 2010-11-05 Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule
PCT/DE2011/001905 WO2012062274A2 (fr) 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température

Publications (1)

Publication Number Publication Date
EP2636062A2 true EP2636062A2 (fr) 2013-09-11

Family

ID=45497593

Family Applications (1)

Application Number Title Priority Date Filing Date
EP11810558.4A Withdrawn EP2636062A2 (fr) 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température

Country Status (5)

Country Link
US (1) US9040338B2 (fr)
EP (1) EP2636062A2 (fr)
CN (1) CN103403862B (fr)
DE (1) DE102010050315C5 (fr)
WO (1) WO2012062274A2 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9147875B1 (en) 2014-09-10 2015-09-29 Cellink Corporation Interconnect for battery packs
US10211443B2 (en) 2014-09-10 2019-02-19 Cellink Corporation Battery interconnects
CN107408544B (zh) * 2015-02-03 2019-09-13 塞林克公司 用于组合式热能与电能传递的系统及方法
JP6668617B2 (ja) * 2015-06-04 2020-03-18 富士電機株式会社 サーミスタ搭載装置およびサーミスタ部品
DE102015114314A1 (de) * 2015-08-28 2017-03-02 Innovative Sensor Technology Ist Ag Verfahren zur Herstellung eines Temperatursensors
DE102015218369A1 (de) 2015-09-24 2017-03-30 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Leiterrahmenmoduls und Leiterrahmenmodul
DE102016101248A1 (de) 2015-11-02 2017-05-04 Epcos Ag Sensorelement und Verfahren zur Herstellung eines Sensorelements
US10386218B2 (en) * 2016-11-22 2019-08-20 Rota Yokogawa Gmbh & Co. Kg Temperature measurement system for measuring the temperature of a tube and flowmeter comprising the temperature measurement system
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
DE102018203971A1 (de) 2018-03-15 2019-09-19 Heraeus Nexensos Gmbh Temperatursensorelement
DE202018001393U1 (de) 2018-03-15 2018-04-26 Heraeus Sensor Technology Gmbh Temperatursensorelement
EP3765827B1 (fr) 2018-03-15 2024-11-13 Yageo Nexensos GmbH Élément capteur de température
EP3588035A1 (fr) * 2018-06-28 2020-01-01 Heraeus Nexensos GmbH Agencement de liaison de fil et procédé de fabrication d'un agencement de liaison de fil
DE202018004354U1 (de) * 2018-09-19 2018-10-15 Heraeus Sensor Technology Gmbh Widerstandsbauelement zur Oberflächenmontage auf einer Leiterplatte und Leiterplatte mit zumindest einem darauf angeordneten Widerstandsbauelement
DE102018219957A1 (de) * 2018-11-21 2020-05-28 Conti Temic Microelectronic Gmbh Leistungselektronikanordnung mit einem Temperatursensor
JP7153544B2 (ja) * 2018-11-28 2022-10-14 株式会社マキタ 電動作業機
CN113767563A (zh) * 2019-01-10 2021-12-07 沃孚半导体公司 用于并联功率装置的具有低电感和快速开关的高功率多层模块
DE102019108988B3 (de) * 2019-04-05 2020-08-13 Infineon Technologies Ag Leistungshalbleitermodul und verfahren zur herstellung desselben
WO2020244733A1 (fr) * 2019-06-03 2020-12-10 Applied Materials, Inc. Ensemble évaporateur, système de dépôt et procédé d'évaporation
CN110118581B (zh) * 2019-06-05 2024-01-09 上海一旻成锋电子科技有限公司 一种嵌入式复合型传感器
DE202020101197U1 (de) * 2020-03-04 2020-03-12 Heraeus Nexensos Gmbh Temperatursensorverbund
DE102020203918A1 (de) * 2020-03-26 2021-09-30 Robert Bosch Gesellschaft mit beschränkter Haftung Leistungsmodul
US20220311103A1 (en) 2021-03-24 2022-09-29 Cellink Corporation Multilayered flexible battery interconnects and methods of fabricating thereof
CN115312505A (zh) * 2022-07-19 2022-11-08 湖南国芯半导体科技有限公司 一种功率器件的无引线封装结构及封装方法
DE102022120673A1 (de) 2022-08-16 2024-02-22 Innovative Sensor Technology Ist Ag Sensorelement zur Erfassung von zumindest einer physikalischen oder chemischen Messgröße und Sensoranordnung
DE102022211818B4 (de) 2022-11-09 2025-12-04 Volkswagen Aktiengesellschaft Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
CN117268575B (zh) * 2023-10-13 2025-09-12 深圳市艾阿尔电气有限公司 温度传感器
DE102024107395A1 (de) * 2024-03-15 2025-06-12 Yageo Nexensos Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04102365A (ja) * 1990-08-22 1992-04-03 Nec Corp ダイオード
DE4315272A1 (de) * 1993-05-07 1994-11-10 Siemens Ag Leistungshalbleiterbauelement mit Pufferschicht
DE19621001A1 (de) * 1996-05-24 1997-11-27 Heraeus Sensor Nite Gmbh Sensoranordnung zur Temperaturmessung und Verfahren zur Herstellung der Anordnung
DE19630902B4 (de) * 1996-08-01 2005-07-14 Ixys Semiconductor Gmbh Einrichtung zur Temperaturüberwachung in einer leistungselektronischen Anordnung
US5896081A (en) * 1997-06-10 1999-04-20 Cyntec Company Resistance temperature detector (RTD) formed with a surface-mount-device (SMD) structure
DE19936924C1 (de) 1999-08-05 2001-06-13 Georg Bernitz Vorrichtung zur Hochtemperaturerfassung und Verfahren zur Herstellung derselben
DE10024516B4 (de) * 2000-05-18 2006-03-09 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Leistungshalbleitermodul
DE10062108B4 (de) * 2000-12-13 2010-04-15 Infineon Technologies Ag Leistungsmodul mit verbessertem transienten Wärmewiderstand
DE10122363B4 (de) * 2001-05-09 2007-11-29 Infineon Technologies Ag Halbleitermodul
DE102004057421B4 (de) * 2004-11-27 2009-07-09 Semikron Elektronik Gmbh & Co. Kg Druckkontaktiertes Leistungshalbleitermodul für hohe Umgebungstemperaturen und Verfahren zu seiner Herstellung
DE102007046900C5 (de) * 2007-09-28 2018-07-26 Heraeus Sensor Technology Gmbh Hochtemperatursensor und ein Verfahren zu dessen Herstellung
DK2042260T3 (en) * 2007-09-28 2014-03-17 Heraeus Materials Tech Gmbh METHOD AND FIT FOR ESTABLISHING CONTACT BETWEEN METAL SURFACES
DE102007046901A1 (de) * 2007-09-28 2009-04-09 W.C. Heraeus Gmbh Verfahren und Paste zur Kontaktierung von Metallflächen
KR101505551B1 (ko) * 2007-11-30 2015-03-25 페어차일드코리아반도체 주식회사 온도 감지소자가 장착된 반도체 파워 모듈 패키지 및 그제조방법
DE102008018841A1 (de) * 2008-04-15 2009-10-22 Conti Temic Microelectronic Gmbh Verfahren zur Herstellung und Aufbau eines Leistungsmoduls
DE102008023216A1 (de) * 2008-05-19 2009-12-03 Friedrich-Alexander-Universität Erlangen-Nürnberg Verfahren zur Betriebstemperaturmessung eines MOS-gesteuerten Halbleiterleistungsbauelementes und Bauelement zur Ausführung des Verfahrens
US7884444B2 (en) * 2008-07-22 2011-02-08 Infineon Technologies Ag Semiconductor device including a transformer on chip
DE102008035993B4 (de) * 2008-08-01 2018-10-11 Infineon Technologies Ag Leistungshalbleitermodul
DE102009010214A1 (de) * 2009-02-23 2010-09-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Diskretes Widerstandsbauelement und Leistungsmodul mit einem diskreten Widerstandsbauelement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2012062274A2 *

Also Published As

Publication number Publication date
DE102010050315C5 (de) 2014-12-04
US20130228890A1 (en) 2013-09-05
CN103403862A (zh) 2013-11-20
CN103403862B (zh) 2016-08-10
WO2012062274A2 (fr) 2012-05-18
DE102010050315A1 (de) 2012-05-10
DE102010050315B4 (de) 2012-05-31
WO2012062274A3 (fr) 2012-07-26
US9040338B2 (en) 2015-05-26

Similar Documents

Publication Publication Date Title
DE102010050315C5 (de) Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule
DE102006060768B4 (de) Gehäusebaugruppe, DBC-Plantine im Wafermaßstab und Vorrichtung mit einer Gehäusebaugruppe für Geräte mit hoher Leistungsdichte
DE102009034083B4 (de) Halbleiterbauelemente und Halbleiterchip
DE102013219571B4 (de) Leistungshalbleitermodul mit vertikalem Shunt-Widerstand
DE10102621B4 (de) Leistungsmodul
DE112014002061T5 (de) Halbleitermodul
DE10204200A1 (de) Leistungsmodul
EP3245672B1 (fr) Agencement de contacts et module de puissance
EP3151274B1 (fr) Dispositif de puissance à semi-conducteur comprenant des impressions conductrices supplémentaires et procédé de production d'un dispositif de puissance à semi-conducteur
WO2019063533A1 (fr) Composant et son procédé de production
EP2704194B1 (fr) Module semi-conducteur de puissance et procédé de fabrication d'un module semi-conducteur de puissance
DE102014221142A1 (de) Modul mit Sinteranbindung
US8519547B2 (en) Chip arrangement and method for producing a chip arrangement
EP2964004A2 (fr) Agencement de composant electronique
US11195778B2 (en) Electronic power module
DE102022208171A1 (de) Anordnung zur Temperaturmessung mindestens eines Bauteils
DE102020131470A1 (de) Package mit Lastanschlüssen, auf welchen eine gekoppelte Leistungskomponente und Logikkomponente montiert sind
DE102024208362A1 (de) Leistungshalbleiter-Chip und Leistungsmodul
DE102022206412A1 (de) Elektronikbaugruppe und Verfahren zur Herstellung einer Elektronikbaugruppe
DE102024134740A1 (de) Halbleitervorrichtung und herstellungsverfahren einer halbleitervorrichtung
DE102024201715A1 (de) Leistungsmodul mit integrierter Schaltung für Risserkennung
WO2012076259A1 (fr) Composant à semi-conducteur, à stabilité renforcée vis-à-vis des effets thermomécaniques et procédé de mise en contact d'un semi-conducteur
DE10102619A1 (de) Leistungsmodul

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20130425

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAX Request for extension of the european patent (deleted)
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20160503