WO2012062274A3 - Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température - Google Patents

Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température Download PDF

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Publication number
WO2012062274A3
WO2012062274A3 PCT/DE2011/001905 DE2011001905W WO2012062274A3 WO 2012062274 A3 WO2012062274 A3 WO 2012062274A3 DE 2011001905 W DE2011001905 W DE 2011001905W WO 2012062274 A3 WO2012062274 A3 WO 2012062274A3
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WO
WIPO (PCT)
Prior art keywords
sintered
power semiconductor
semiconductor module
temperature sensor
producing
Prior art date
Application number
PCT/DE2011/001905
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German (de)
English (en)
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WO2012062274A2 (fr
Inventor
Ronald Eisele
Original Assignee
Danfoss Silicon Power Gmbh
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Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to CN201180053352.8A priority Critical patent/CN103403862B/zh
Priority to US13/883,348 priority patent/US9040338B2/en
Priority to EP11810558.4A priority patent/EP2636062A2/fr
Publication of WO2012062274A2 publication Critical patent/WO2012062274A2/fr
Publication of WO2012062274A3 publication Critical patent/WO2012062274A3/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thermistors And Varistors (AREA)
  • Die Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

L'invention concerne un procédé de fabrication de composants électriques frittables pour le frittage commun avec des composants actifs. Selon le procédé, les composants sous forme plane sont pourvus d'au moins un côté inférieur plan destiné au frittage, et une zone de contact électrique est présente sous forme de surface de contact métallique sur la surface opposée à la surface de frittage, pouvant être mise en contact sur le côté supérieur par un procédé courant du groupe: connexion des fils, soudage, frittage ou métallisation des trous. Le composant est une sonde de température dont la surface inférieure comporte une métallisation frittable sur un corps céramique, le corps céramique comportant deux surfaces de contact électriques pour la connexion électrique ultérieure.
PCT/DE2011/001905 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température WO2012062274A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180053352.8A CN103403862B (zh) 2010-11-05 2011-10-28 功率半导体模块和用于制造与温度传感器一起烧结的功率半导体模块的方法
US13/883,348 US9040338B2 (en) 2010-11-05 2011-10-28 Power semiconductor module with method for manufacturing a sintered power semiconductor module
EP11810558.4A EP2636062A2 (fr) 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102010050315.0 2010-11-05
DE102010050315.0A DE102010050315C5 (de) 2010-11-05 2010-11-05 Verfahren zur Herstellung von gesinterten, elektrischen Baugruppen und damit hergestellte Leistungshalbleitermodule

Publications (2)

Publication Number Publication Date
WO2012062274A2 WO2012062274A2 (fr) 2012-05-18
WO2012062274A3 true WO2012062274A3 (fr) 2012-07-26

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PCT/DE2011/001905 WO2012062274A2 (fr) 2010-11-05 2011-10-28 Module à semi-conducteurs de puissance et procédé de fabrication d'un module à semi-conducteurs de puissance fritté comportant une sonde de température

Country Status (5)

Country Link
US (1) US9040338B2 (fr)
EP (1) EP2636062A2 (fr)
CN (1) CN103403862B (fr)
DE (1) DE102010050315C5 (fr)
WO (1) WO2012062274A2 (fr)

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WO2016126890A1 (fr) * 2015-02-03 2016-08-11 Cellink Corporation Systèmes et procédés pour transfert combiné d'énergies thermique et électrique
JP6668617B2 (ja) * 2015-06-04 2020-03-18 富士電機株式会社 サーミスタ搭載装置およびサーミスタ部品
DE102015114314A1 (de) 2015-08-28 2017-03-02 Innovative Sensor Technology Ist Ag Verfahren zur Herstellung eines Temperatursensors
DE102015218369A1 (de) 2015-09-24 2017-03-30 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Leiterrahmenmoduls und Leiterrahmenmodul
DE102016101246A1 (de) * 2015-11-02 2017-05-04 Epcos Ag Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
US10386218B2 (en) * 2016-11-22 2019-08-20 Rota Yokogawa Gmbh & Co. Kg Temperature measurement system for measuring the temperature of a tube and flowmeter comprising the temperature measurement system
US10749443B2 (en) 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US10917992B2 (en) 2017-01-13 2021-02-09 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
US11696417B2 (en) 2017-01-13 2023-07-04 Wolfspeed, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
EP3765827A1 (fr) * 2018-03-15 2021-01-20 Heraeus Nexensos GmbH Élément capteur de température
DE202018001393U1 (de) 2018-03-15 2018-04-26 Heraeus Sensor Technology Gmbh Temperatursensorelement
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CN103403862B (zh) 2016-08-10
US9040338B2 (en) 2015-05-26
CN103403862A (zh) 2013-11-20
DE102010050315C5 (de) 2014-12-04
US20130228890A1 (en) 2013-09-05

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