EP2510617A1 - Circuit limiteur - Google Patents

Circuit limiteur

Info

Publication number
EP2510617A1
EP2510617A1 EP10807515A EP10807515A EP2510617A1 EP 2510617 A1 EP2510617 A1 EP 2510617A1 EP 10807515 A EP10807515 A EP 10807515A EP 10807515 A EP10807515 A EP 10807515A EP 2510617 A1 EP2510617 A1 EP 2510617A1
Authority
EP
European Patent Office
Prior art keywords
circuit
transistor
output
signal
limiter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10807515A
Other languages
German (de)
English (en)
Inventor
Rolf Reber
Patrick Schuh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hensoldt Sensors GmbH
Original Assignee
EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Publication of EP2510617A1 publication Critical patent/EP2510617A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/04—Limiting level dependent on strength of signal; Limiting level dependent on strength of carrier on which signal is modulated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/441—Protection of an amplifier being implemented by clamping means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/66—Clipping circuitry being present in an amplifier, i.e. the shape of the signal being modified

Definitions

  • the invention relates to a limiter circuit according to the features of patent claim 1.
  • the protection circuit is constructed in strip line or coaxial technology on a carrier with discrete components.
  • the carrier in turn is mounted in a matching housing, which also contains the connections for the drive and the high-frequency signals.
  • the high-frequency output is connected to the input of the module to be protected via a high-frequency line.
  • a disadvantage of this arrangement is that the protection circuit is constructed discretely or, if integrated, is realized with diodes. Both approaches are costly and not suitable for applications where space is limited. When using diodes also has the problem that the limiter diodes used do not have sufficient properties to ensure a high load capacity of the limiter.
  • the object of the invention is to provide a limiter circuit which overcomes the disadvantages of the prior art. This object is achieved with the limiter circuit according to the features of patent claim 1.
  • An advantageous embodiment of the invention is the subject of a subclaim.
  • the limiter circuit according to the invention having a signal input and a signal output for limiting an output signal applied to the signal output, a further circuit connected to the output of the Bregenzer circuit, a connection for supplying a bias voltage and a transistor is present, the gate terminal of the transistor being connected via a first matching circuit is connected to the terminal and via a second matching circuit to the signal input.
  • the matching circuits consist of e.g. from resistors and / or inductors and / or capacitors and / or line sections. This makes it possible to adjust the operating point of the transistor according to the requirements. Thus, e.g. the frequency response or the input matching of the transistor are adjusted accordingly.
  • FIGURE shows a schematic structure of a limiter circuit according to the invention.
  • the signal input E1 of the limiter circuit is connected via a capacitor C1 and a resistor R2 to the gate terminal of a transistor T.
  • the terminal E2 is connected via a resistor R3 and the resistor R2 to the gate terminal of the transistor T.
  • the capacitor C1 and the resistor R3 are connected to each other at the point K.
  • a voltage source (not shown) can be connected to the terminal E2 .
  • the combination of R3 and R2 symbolizes the first matching circuit A1, the combination of R2 and C1 the second matching circuit A2.
  • the source terminal S of the transistor T is grounded M and the drain terminal D is connected to the output A of the limiter circuit.
  • At the output A of the limiter circuit A is another, to be protected circuit SCH, conveniently connected via a third matching circuit A3.
  • the transistor T and the further circuit assemblies are implemented in semiconductor technology for power applications (e.g., gallium nitride). It is also possible that the limiter circuit is integrated in the circuit SCH to be protected.
  • the gate voltage at transistor T does not change. This means that the transistor T remains locked. With large signals (more than 10 mW), the rectification effect in the transistor T produces a countervoltage which makes it conductive and thus diverts a portion of the input signal at the input E1 to ground M and thus causes a limitation (protective effect).
  • the resistor R2 serves as protection against too high a gate current at the transistor T and thus prevents it from being destroyed itself.
  • the operating point of the transistor is adjusted so that no limitation takes place during normal operation of the limiter circuit. In addition, it can also be used to set the threshold for the limitation.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)

Abstract

L'invention concerne un circuit limiteur, comprenant une entrée de signal (E1) et une sortie de signal (A), pour la limitation d'un signal de sortie appliqué à une sortie de signal (A), pouvant être acheminé à un autre circuit (SCH) connecté avec la sortie du circuit limiteur, cependant qu'il est prévu une connexion de tension (E2) pour l'alimentation d'une tension préalable (U), et un transistor (T), la borne de grille (G) du transistor (T) étant connectée, via un premier circuit d'adaptation (A1), avec la connexion de tension (E2) et, via un second circuit d'adaptation (A2), avec l'entrée de signal (E1).
EP10807515A 2009-12-09 2010-11-25 Circuit limiteur Withdrawn EP2510617A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200910057544 DE102009057544A1 (de) 2009-12-09 2009-12-09 Begrenzerschaltung
PCT/DE2010/001387 WO2011069479A1 (fr) 2009-12-09 2010-11-25 Circuit limiteur

Publications (1)

Publication Number Publication Date
EP2510617A1 true EP2510617A1 (fr) 2012-10-17

Family

ID=43741922

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10807515A Withdrawn EP2510617A1 (fr) 2009-12-09 2010-11-25 Circuit limiteur

Country Status (6)

Country Link
US (1) US9093972B2 (fr)
EP (1) EP2510617A1 (fr)
JP (1) JP2013513978A (fr)
DE (1) DE102009057544A1 (fr)
IN (1) IN2012DN04976A (fr)
WO (1) WO2011069479A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3013536B1 (fr) * 2013-11-18 2016-01-01 Thales Sa Limiteur de puissance radiofrequence ameliore; chaine d'emission et/ou de reception radiofrequence et etage d'amplification faible bruit associes 

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5301081A (en) * 1992-07-16 1994-04-05 Pacific Monolithics Input protection circuit
EP1480332A2 (fr) * 2003-05-19 2004-11-24 Samsung Electronics Co., Ltd. Amplificateur de puissance à hautes fréquences intégrable, commandé en tension

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5233453A (en) * 1975-09-10 1977-03-14 Nec Corp High frequency high output transistor amplifier
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US5121176A (en) * 1990-02-01 1992-06-09 Quigg Fred L MOSFET structure having reduced gate capacitance
US5157289A (en) 1991-07-29 1992-10-20 Grumman Aerospace Corporation FET adaptive limiter with high current FET detector
US5608353A (en) * 1995-03-29 1997-03-04 Rf Micro Devices, Inc. HBT power amplifier
JPH10247828A (ja) 1997-03-04 1998-09-14 Mitsubishi Electric Corp リミタアンプ
JPH10322141A (ja) * 1997-05-20 1998-12-04 Matsushita Electric Ind Co Ltd 高周波電力増幅器およびそれを用いた無線通信装置
US6100763A (en) * 1999-03-29 2000-08-08 Motorola, Inc. Circuit for RF buffer and method of operation
KR100759508B1 (ko) * 2000-08-01 2007-09-18 정연문 귀환루프를 갖는 고주파 발진 회로
JP4512971B2 (ja) * 2001-03-02 2010-07-28 株式会社日立プラズマパテントライセンシング 表示駆動装置
US7154339B2 (en) * 2002-05-22 2006-12-26 Nxp B.V. RF power amplifier
US6747484B1 (en) * 2003-04-22 2004-06-08 Raytheon Company Radio frequency limiter circuit
US7348852B1 (en) * 2004-11-08 2008-03-25 Anadigies, Inc. Device and method for power amplifier noise reduction
ATE413729T1 (de) * 2006-07-05 2008-11-15 Infineon Technologies Ag Mos-transistorschaltung mit gesteuerter anstiegszeit
JP2008251755A (ja) 2007-03-30 2008-10-16 Eudyna Devices Inc 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5301081A (en) * 1992-07-16 1994-04-05 Pacific Monolithics Input protection circuit
EP1480332A2 (fr) * 2003-05-19 2004-11-24 Samsung Electronics Co., Ltd. Amplificateur de puissance à hautes fréquences intégrable, commandé en tension

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2011069479A1 *

Also Published As

Publication number Publication date
DE102009057544A1 (de) 2011-06-16
JP2013513978A (ja) 2013-04-22
WO2011069479A1 (fr) 2011-06-16
IN2012DN04976A (fr) 2015-09-25
US9093972B2 (en) 2015-07-28
US20120281325A1 (en) 2012-11-08

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DAX Request for extension of the european patent (deleted)
17Q First examination report despatched

Effective date: 20131212

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: AIRBUS DEFENCE AND SPACE GMBH

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: AIRBUS DS ELECTRONICS AND BORDER SECURITY GMBH

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: HENSOLDT SENSORS GMBH

STAA Information on the status of an ep patent application or granted ep patent

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