ATE413729T1 - Mos-transistorschaltung mit gesteuerter anstiegszeit - Google Patents
Mos-transistorschaltung mit gesteuerter anstiegszeitInfo
- Publication number
- ATE413729T1 ATE413729T1 AT06013945T AT06013945T ATE413729T1 AT E413729 T1 ATE413729 T1 AT E413729T1 AT 06013945 T AT06013945 T AT 06013945T AT 06013945 T AT06013945 T AT 06013945T AT E413729 T1 ATE413729 T1 AT E413729T1
- Authority
- AT
- Austria
- Prior art keywords
- mos transistor
- control
- rise time
- signal
- transistor circuit
- Prior art date
Links
- 230000001419 dependent effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06013945A EP1906532B1 (de) | 2006-07-05 | 2006-07-05 | MOS-Transistorschaltung mit gesteuerter Anstiegszeit |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE413729T1 true ATE413729T1 (de) | 2008-11-15 |
Family
ID=37622163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT06013945T ATE413729T1 (de) | 2006-07-05 | 2006-07-05 | Mos-transistorschaltung mit gesteuerter anstiegszeit |
Country Status (4)
Country | Link |
---|---|
US (1) | US7649364B2 (de) |
EP (1) | EP1906532B1 (de) |
AT (1) | ATE413729T1 (de) |
DE (1) | DE602006003564D1 (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102009057544A1 (de) * | 2009-12-09 | 2011-06-16 | Eads Deutschland Gmbh | Begrenzerschaltung |
US8493146B2 (en) * | 2011-03-10 | 2013-07-23 | Silicon Laboratories Inc. | Amplifier using fast discharging reference |
WO2012164727A1 (ja) * | 2011-06-02 | 2012-12-06 | トヨタ自動車株式会社 | 電圧駆動型素子を駆動する駆動装置 |
US9678139B2 (en) * | 2011-12-22 | 2017-06-13 | Continental Automotive Systems, Inc. | Method and apparatus for high side transistor protection |
US9184748B2 (en) * | 2011-12-30 | 2015-11-10 | Stmicroelectronics International N.V. | Adaptive buffer |
TW201426237A (zh) * | 2012-12-18 | 2014-07-01 | Richtek Technology Corp | 電流控制電路與電流控制方法 |
EP3017542B1 (de) * | 2013-07-04 | 2019-09-11 | NXP USA, Inc. | Gate-treiberschaltung und verfahren zur steuerung eines leistungstransistors |
EP3057231B1 (de) | 2015-02-16 | 2019-04-10 | Power Integrations Switzerland GmbH | Steuerschaltung und Steuerverfahren zum Anschalten eines Leistungshalbleiterschalters |
CN105048791B (zh) * | 2015-07-22 | 2017-09-22 | 深圳市稳先微电子有限公司 | 功率管控制系统和用于开关电源的外置功率管驱动电路 |
CN107134992A (zh) * | 2017-06-29 | 2017-09-05 | 合肥灿芯科技有限公司 | 输入输出驱动电路 |
CN116301169B (zh) * | 2023-05-23 | 2023-08-15 | 芯动微电子科技(珠海)有限公司 | 一种偏置电路和比较器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3123349B2 (ja) * | 1994-06-29 | 2001-01-09 | 富士電機株式会社 | 半導体装置の制御回路 |
JP3421507B2 (ja) | 1996-07-05 | 2003-06-30 | 三菱電機株式会社 | 半導体素子の駆動回路 |
US6278305B1 (en) * | 1998-02-09 | 2001-08-21 | Matsushita Electric Industrial, Ltd. | Semiconductor integrated circuit |
DE19836577C1 (de) | 1998-08-12 | 2000-04-20 | Siemens Ag | Leistungsschaltkreis mit verminderter Störstrahlung |
WO2000027032A1 (en) | 1998-10-30 | 2000-05-11 | Siemens Automotive Corporation | Combined voltage and current slew rate limiting |
DE19855604C5 (de) | 1998-12-02 | 2004-04-15 | Siemens Ag | Verfahren und Vorrichtung zum Ansteuern einer Leistungsendstufe |
US6163178A (en) * | 1998-12-28 | 2000-12-19 | Rambus Incorporated | Impedance controlled output driver |
FR2796777B1 (fr) * | 1999-07-20 | 2001-09-21 | St Microelectronics Sa | Commande d'un transistor mos de puissance |
US6985341B2 (en) * | 2001-04-24 | 2006-01-10 | Vlt, Inc. | Components having actively controlled circuit elements |
DE10143432C1 (de) * | 2001-09-05 | 2003-02-27 | Daimler Chrysler Ag | Treiberschaltung und Ansteuerverfahren für einen feldgesteuerten Leistungsschalter |
DE10240167C5 (de) | 2002-08-30 | 2010-01-21 | Infineon Technologies Ag | Schaltungsanordnung mit einem Leistungstransistor und einer Ansteuerschaltung für den Leistungstransistor |
JP2004215458A (ja) * | 2003-01-08 | 2004-07-29 | Mitsubishi Electric Corp | 半導体スイッチング素子の駆動回路 |
JP3799341B2 (ja) * | 2003-07-25 | 2006-07-19 | 株式会社東芝 | ゲート駆動回路及び半導体装置 |
-
2006
- 2006-07-05 DE DE602006003564T patent/DE602006003564D1/de active Active
- 2006-07-05 AT AT06013945T patent/ATE413729T1/de active
- 2006-07-05 EP EP06013945A patent/EP1906532B1/de not_active Expired - Fee Related
-
2007
- 2007-07-05 US US11/825,322 patent/US7649364B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1906532A1 (de) | 2008-04-02 |
US20080068059A1 (en) | 2008-03-20 |
DE602006003564D1 (de) | 2008-12-18 |
EP1906532B1 (de) | 2008-11-05 |
US7649364B2 (en) | 2010-01-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification |
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