EP2510617A1 - Limiting circuit - Google Patents

Limiting circuit

Info

Publication number
EP2510617A1
EP2510617A1 EP10807515A EP10807515A EP2510617A1 EP 2510617 A1 EP2510617 A1 EP 2510617A1 EP 10807515 A EP10807515 A EP 10807515A EP 10807515 A EP10807515 A EP 10807515A EP 2510617 A1 EP2510617 A1 EP 2510617A1
Authority
EP
European Patent Office
Prior art keywords
circuit
transistor
output
signal
limiter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP10807515A
Other languages
German (de)
French (fr)
Inventor
Rolf Reber
Patrick Schuh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hensoldt Sensors GmbH
Original Assignee
EADS Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EADS Deutschland GmbH filed Critical EADS Deutschland GmbH
Publication of EP2510617A1 publication Critical patent/EP2510617A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G11/00—Limiting amplitude; Limiting rate of change of amplitude ; Clipping in general
    • H03G11/04—Limiting level dependent on strength of signal; Limiting level dependent on strength of carrier on which signal is modulated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/441—Protection of an amplifier being implemented by clamping means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/66—Clipping circuitry being present in an amplifier, i.e. the shape of the signal being modified

Definitions

  • the invention relates to a limiter circuit according to the features of patent claim 1.
  • the protection circuit is constructed in strip line or coaxial technology on a carrier with discrete components.
  • the carrier in turn is mounted in a matching housing, which also contains the connections for the drive and the high-frequency signals.
  • the high-frequency output is connected to the input of the module to be protected via a high-frequency line.
  • a disadvantage of this arrangement is that the protection circuit is constructed discretely or, if integrated, is realized with diodes. Both approaches are costly and not suitable for applications where space is limited. When using diodes also has the problem that the limiter diodes used do not have sufficient properties to ensure a high load capacity of the limiter.
  • the object of the invention is to provide a limiter circuit which overcomes the disadvantages of the prior art. This object is achieved with the limiter circuit according to the features of patent claim 1.
  • An advantageous embodiment of the invention is the subject of a subclaim.
  • the limiter circuit according to the invention having a signal input and a signal output for limiting an output signal applied to the signal output, a further circuit connected to the output of the Bregenzer circuit, a connection for supplying a bias voltage and a transistor is present, the gate terminal of the transistor being connected via a first matching circuit is connected to the terminal and via a second matching circuit to the signal input.
  • the matching circuits consist of e.g. from resistors and / or inductors and / or capacitors and / or line sections. This makes it possible to adjust the operating point of the transistor according to the requirements. Thus, e.g. the frequency response or the input matching of the transistor are adjusted accordingly.
  • FIGURE shows a schematic structure of a limiter circuit according to the invention.
  • the signal input E1 of the limiter circuit is connected via a capacitor C1 and a resistor R2 to the gate terminal of a transistor T.
  • the terminal E2 is connected via a resistor R3 and the resistor R2 to the gate terminal of the transistor T.
  • the capacitor C1 and the resistor R3 are connected to each other at the point K.
  • a voltage source (not shown) can be connected to the terminal E2 .
  • the combination of R3 and R2 symbolizes the first matching circuit A1, the combination of R2 and C1 the second matching circuit A2.
  • the source terminal S of the transistor T is grounded M and the drain terminal D is connected to the output A of the limiter circuit.
  • At the output A of the limiter circuit A is another, to be protected circuit SCH, conveniently connected via a third matching circuit A3.
  • the transistor T and the further circuit assemblies are implemented in semiconductor technology for power applications (e.g., gallium nitride). It is also possible that the limiter circuit is integrated in the circuit SCH to be protected.
  • the gate voltage at transistor T does not change. This means that the transistor T remains locked. With large signals (more than 10 mW), the rectification effect in the transistor T produces a countervoltage which makes it conductive and thus diverts a portion of the input signal at the input E1 to ground M and thus causes a limitation (protective effect).
  • the resistor R2 serves as protection against too high a gate current at the transistor T and thus prevents it from being destroyed itself.
  • the operating point of the transistor is adjusted so that no limitation takes place during normal operation of the limiter circuit. In addition, it can also be used to set the threshold for the limitation.

Abstract

The invention relates to a limiting circuit having a signal input (E1) and a signal output (A) for limiting an output signal that is present at the signal output (A) and that can be fed to a further circuit (SCH) connected to the output of the limiting circuit, wherein a voltage connection (E2) for feeding a bias voltage (U) and a transistor (T) are present, wherein the gate connection (G) of the transistor (T) is connected to the voltage connection (E2) by means of a first matching circuit (A1) and to the signal input (E1) by means of a second matching circuit (A2).

Description

Begrenzerschaltung  limiter
Die Erfindung betrifft eine Begrenzerschaltung gemäß den Merkmalen des Patentanspruchs 1. The invention relates to a limiter circuit according to the features of patent claim 1.
Aus http://www.mwjournal.com/Journal/Print.asp?ld=AR_4771 ist eine Schutzschaltung für eine mit der Schutzschaltung verbundene Baugruppe beschrieben. Die Schutzschaltung wird in Streifenleitungs- oder Koaxialtechnologie auf einem Träger mit diskreten Bauelementen aufgebaut. Der Träger wiederum wird in ein passendes Gehäuse montiert, das auch die Anschlüsse für die Ansteuerung und die Hochfrequenzsignale enthält. Der Hochfrequenz-Ausgang wird mit dem Eingang der zu schützenden Baugruppe über eine Hochfrequenzleitung verbunden. Http://www.mwjournal.com/Journal/Print.asp?ld=AR_4771 describes a protection circuit for an assembly connected to the protection circuit. The protection circuit is constructed in strip line or coaxial technology on a carrier with discrete components. The carrier in turn is mounted in a matching housing, which also contains the connections for the drive and the high-frequency signals. The high-frequency output is connected to the input of the module to be protected via a high-frequency line.
Ein Nachteil dieser Anordnung ist, dass die Schutzschaltung diskret aufgebaut ist, oder falls integriert, mit Dioden realisiert ist. Beide Ansätze sind kostenintensiv und für Anwendungen, bei welchem nur wenig Platz zur Verfügung steht, nicht geeignet. Bei der Verwendung von Dioden tritt zudem das Problem auf, dass die verwendeten Begrenzerdioden keine ausreichenden Eigenschaften aufweisen, um eine hohe Belastbarkeit der Begrenzerschaltung zu gewährleisten. A disadvantage of this arrangement is that the protection circuit is constructed discretely or, if integrated, is realized with diodes. Both approaches are costly and not suitable for applications where space is limited. When using diodes also has the problem that the limiter diodes used do not have sufficient properties to ensure a high load capacity of the limiter.
Eine weitere Begrenzerschaltung ist aus US 5,301 ,081 bekannt. Diese Schaltung umfasst einen ersten Schaltungsblock mit einem Transistor und einen zweiten Schaltungsblock mit einer Diodenanordnung. Die Ansteuerung des Transistors im ersten Schaltungsblock erfolgt über eine aufwendige Detektorschaltung aus mehreren Dioden. Ein Nachteil dieser Bregrenzerschaltung ist der komplizierte Aufbau und die Vielzahl der benötigten Bauteile. Another limiter circuit is known from US 5,301,081. This circuit comprises a first circuit block with a transistor and a second circuit block with a diode arrangement. The control of the transistor in the first circuit block via a complex detector circuit of a plurality of diodes. A disadvantage of this Bregrenzerschaltung is the complicated structure and the large number of components required.
Aufgabe der Erfindung ist es, eine Begrenzerschaltung anzugeben, welche die Nachteile des Standes der Technik beseitigt. Diese Aufgabe wird mit der Begrenzerschaltung gemäß den Merkmalen des Patentanspruchs 1 gelöst. Eine vorteilhafte Ausführung der Erfindung ist Gegenstand eines Unteranspruchs. Bei der erfindungsgemäße Begrenzerschaltung mit einem Signaleingang und einem Signalausgang zur Begrenzung eines am Signalausgang anliegenden, einer mit dem Ausgang der Bregenzerschaltung verbundenen weiteren Schaltung zuführbaren Ausgangssignals, ist ein Anschluss zur Zuführung einer Vorspannung sowie ein Transistor vorhanden, wobei der Gate-Anschluss des Transistors über eine erste Anpassschaltung mit dem Anschluss und über eine zweite Anpassschaltung mit dem Signaleingang verbunden ist. The object of the invention is to provide a limiter circuit which overcomes the disadvantages of the prior art. This object is achieved with the limiter circuit according to the features of patent claim 1. An advantageous embodiment of the invention is the subject of a subclaim. In the case of the limiter circuit according to the invention having a signal input and a signal output for limiting an output signal applied to the signal output, a further circuit connected to the output of the Bregenzer circuit, a connection for supplying a bias voltage and a transistor is present, the gate terminal of the transistor being connected via a first matching circuit is connected to the terminal and via a second matching circuit to the signal input.
Die Anpassschaltungen bestehen z.B. aus Widerständen und/oder Induktivitäten und/oder Kapazitäten und/oder Leitungsstücken. Dadurch ist es möglich, den Arbeitspunkt des Transistors entsprechend den Anforderungen einzustellen. So kann z.B. der Frequenzgang oder die Eingangsanpassung des Transistors entsprechend angepasst werden. The matching circuits consist of e.g. from resistors and / or inductors and / or capacitors and / or line sections. This makes it possible to adjust the operating point of the transistor according to the requirements. Thus, e.g. the frequency response or the input matching of the transistor are adjusted accordingly.
Die Erfindung wird anhand einer Figur näher erläutert. Die einzige Figur zeigt einen schematische Aufbau einer erfindungsgemäßen Begrenzerschaltung. The invention will be explained in more detail with reference to a figure. The single FIGURE shows a schematic structure of a limiter circuit according to the invention.
Der Signaleingang E1 der Begrenzerschaltung ist über einen Kondensator C1 und einem Widerstand R2 mit dem Gate-Anschluss eines Transistors T verbunden. Der Anschluss E2 ist über einen Widerstand R3 und dem Widerstand R2 mit dem Gate- Anschluss des Transistors T verbunden. Der Kondensator C1 und der Widerstand R3 sind im Punkt K miteinander verbunden. An den Anschluss E2 ist eine Spannungsquelle (nicht dargestellt) anschließbar. Mittels der Spannung der Spannungsquelle kann der Arbeitspunkt des Transistors T entsprechend eingestellt werden. Die Kombination aus R3 und R2 symbolisiert dabei die erste Anpassschaltung A1 , die Kombination aus R2 und C1 die zweite Anpassschaltung A2. The signal input E1 of the limiter circuit is connected via a capacitor C1 and a resistor R2 to the gate terminal of a transistor T. The terminal E2 is connected via a resistor R3 and the resistor R2 to the gate terminal of the transistor T. The capacitor C1 and the resistor R3 are connected to each other at the point K. To the terminal E2 a voltage source (not shown) can be connected. By means of the voltage of the voltage source, the operating point of the transistor T can be adjusted accordingly. The combination of R3 and R2 symbolizes the first matching circuit A1, the combination of R2 and C1 the second matching circuit A2.
Der Source-Anschluß S des Transistors T ist mit Masse M und der Drain-Anschluss D ist mit dem Ausgang A der Begrenzerschaltung verbunden. An den Ausgang A der Begrenzerschaltung A ist eine weitere, zu schützende Schaltung SCH, zweckmäßig über eine dritte Anpassschaltung A3 anschließbar. The source terminal S of the transistor T is grounded M and the drain terminal D is connected to the output A of the limiter circuit. At the output A of the limiter circuit A is another, to be protected circuit SCH, conveniently connected via a third matching circuit A3.
Zweckmäßig sind der Transistor T und die weitere Schaltung Baugruppen in einer Halbleitertechnologie für Leistungsanwendungen (z.B. Gallium-Nitrid) ausgeführt. Es ist darüber hinaus möglich, dass die Begrenzerschaltung in die zu schützende Schaltung SCH integriert ist. Conveniently, the transistor T and the further circuit assemblies are implemented in semiconductor technology for power applications (e.g., gallium nitride). It is also possible that the limiter circuit is integrated in the circuit SCH to be protected.
Bei kleinen Eingangssignalen (weniger als 10mW; was dem Normalbetrieb der Begrenzerschaltung entspricht) ändert sich die Gatespannung am Transistor T nicht. Dies bedeutet, der Transistor T bleibt gesperrt. Bei großen Signalen ( mehr als 10mW) entsteht durch den Gleichrichtungseffekt im Transistor T eine Gegenspannung, die diesen leitend macht und somit einen Teil des Eingangssignals am Eingang E1 nach Masse M ableitet und damit eine Begrenzung bewirkt (Schutzwir- kung). Der Widerstand R2 dient als Schutz vor einem zu hohem Gatestrom am Transistor T und verhindert so, dass dieser selbst zerstört wird. Mit einer Spannungsquelle an dem Anschlusspunkt E2 wird der Arbeitspunkt vom Transistor so eingestellt, dass im Normalbetrieb der Begrenzerschaltung keine Begrenzung stattfindet. Außerdem kann damit auch die Ansprechschwelle für die Begrenzung eingestellt werden. For small input signals (less than 10mW, which corresponds to the normal operation of the limiter circuit), the gate voltage at transistor T does not change. This means that the transistor T remains locked. With large signals (more than 10 mW), the rectification effect in the transistor T produces a countervoltage which makes it conductive and thus diverts a portion of the input signal at the input E1 to ground M and thus causes a limitation (protective effect). The resistor R2 serves as protection against too high a gate current at the transistor T and thus prevents it from being destroyed itself. With a voltage source at the connection point E2, the operating point of the transistor is adjusted so that no limitation takes place during normal operation of the limiter circuit. In addition, it can also be used to set the threshold for the limitation.

Claims

Patentansprüche claims
1. Begrenzerschaltung mit einem Signaleingang (E1 ) und einem Signalausgang (A) zur Begrenzung eines am Signalausgang (A) anliegenden, einer mit dem Ausgang (A) der Bregenzerschaltung verbundenen weiteren Schaltung (SCH) zuführbaren Ausgangssignals, 1. limiter circuit having a signal input (E1) and a signal output (A) for limiting a signal output at the signal output (A), one of the output (A) of Bregenzerschaltung connected further circuit (SCH) deliverable output signal
dadurch gekennzeichnet, dass  characterized in that
ein Spannungsanschluss (E2) zur Zuführung einer Vorspannung (U) sowie ein Transistor (T) vorhanden ist, wobei der Gate-Anschluss (G) des Transistors (T) über eine erste Anpassschaltung (A1) mit dem Spannungsanschluss (E2) und über eine zweite Anpassschaltung (A2) mit dem Signaleingang (E1 ) verbunden ist.  a voltage terminal (E2) for supplying a bias voltage (U) and a transistor (T) is present, wherein the gate terminal (G) of the transistor (T) via a first matching circuit (A1) to the voltage terminal (E2) and via a second matching circuit (A2) is connected to the signal input (E1).
2. Begrenzerschaltung nach Anspruch 1 , 2. limiter circuit according to claim 1,
dadurch gekennzeichnet, dass  characterized in that
zwischen dem Drain-Anschluss (D) des Transistors (T) und der weiteren Schaltung (SCH) eine dritte Anpassschaltung (A3) vorhanden ist.  between the drain terminal (D) of the transistor (T) and the further circuit (SCH), a third matching circuit (A3) is present.
3. Begrenzerschaltung nach Anspruch 1 oder 2, 3. limiter circuit according to claim 1 or 2,
dadurch gekennzeichnet, dass  characterized in that
der Transistor (T) und die in der weiteren Schaltung (SCH) verwendeten Baugruppen in einer Halbleitertechnologie für Leistungsanwendungen gefertigt sind.  the transistor (T) and the assemblies used in the further circuit (SCH) are manufactured in a semiconductor technology for power applications.
EP10807515A 2009-12-09 2010-11-25 Limiting circuit Withdrawn EP2510617A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE200910057544 DE102009057544A1 (en) 2009-12-09 2009-12-09 limiter
PCT/DE2010/001387 WO2011069479A1 (en) 2009-12-09 2010-11-25 Limiting circuit

Publications (1)

Publication Number Publication Date
EP2510617A1 true EP2510617A1 (en) 2012-10-17

Family

ID=43741922

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10807515A Withdrawn EP2510617A1 (en) 2009-12-09 2010-11-25 Limiting circuit

Country Status (6)

Country Link
US (1) US9093972B2 (en)
EP (1) EP2510617A1 (en)
JP (1) JP2013513978A (en)
DE (1) DE102009057544A1 (en)
IN (1) IN2012DN04976A (en)
WO (1) WO2011069479A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3013536B1 (en) * 2013-11-18 2016-01-01 Thales Sa IMPROVED RADIO FREQUENCY POWER LIMITER; RADIO FREQUENCY TRANSMITTING AND / OR RECEIVING CHAIN AND ASSOCIATED LOW NOISE AMPLIFICATION STAGE

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EP1480332A2 (en) * 2003-05-19 2004-11-24 Samsung Electronics Co., Ltd. Integratable, voltage-controlled rf power amplifier

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EP1480332A2 (en) * 2003-05-19 2004-11-24 Samsung Electronics Co., Ltd. Integratable, voltage-controlled rf power amplifier

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Title
See also references of WO2011069479A1 *

Also Published As

Publication number Publication date
IN2012DN04976A (en) 2015-09-25
DE102009057544A1 (en) 2011-06-16
JP2013513978A (en) 2013-04-22
US20120281325A1 (en) 2012-11-08
US9093972B2 (en) 2015-07-28
WO2011069479A1 (en) 2011-06-16

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