EP2446720A2 - Verfahren zur herstellung einer strukturierten metallischen beschichtung - Google Patents
Verfahren zur herstellung einer strukturierten metallischen beschichtungInfo
- Publication number
- EP2446720A2 EP2446720A2 EP10726485A EP10726485A EP2446720A2 EP 2446720 A2 EP2446720 A2 EP 2446720A2 EP 10726485 A EP10726485 A EP 10726485A EP 10726485 A EP10726485 A EP 10726485A EP 2446720 A2 EP2446720 A2 EP 2446720A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- electrically conductive
- substance
- monolayer
- conductive particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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- UWSYCPWEBZRZNJ-UHFFFAOYSA-N trimethoxy(2,4,4-trimethylpentyl)silane Chemical compound CO[Si](OC)(OC)CC(C)CC(C)(C)C UWSYCPWEBZRZNJ-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- BVQYIDJXNYHKRK-UHFFFAOYSA-N trimethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BVQYIDJXNYHKRK-UHFFFAOYSA-N 0.000 description 1
- JEPXSTGVAHHRBD-UHFFFAOYSA-N trimethoxy(nonyl)silane Chemical compound CCCCCCCCC[Si](OC)(OC)OC JEPXSTGVAHHRBD-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- LIJFLHYUSJKHKV-UHFFFAOYSA-N trimethoxy(undecyl)silane Chemical compound CCCCCCCCCCC[Si](OC)(OC)OC LIJFLHYUSJKHKV-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1208—Pretreatment of the circuit board, e.g. modifying wetting properties; Patterning by using affinity patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1173—Differences in wettability, e.g. hydrophilic or hydrophobic areas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the invention relates to a method for producing a structured metallic coating on a substrate. Furthermore, the invention relates to a use of the method for the production of solar cells or printed circuit boards as well as an electronic component comprising a substrate, on which a structured metallic surface is applied.
- Structured metallic coatings on a substrate are produced, for example, by printing processes.
- an ink containing metallic particles is applied to the substrate by, for example, an ink jet printing method or a laser printing method.
- a corresponding method in which drops of paint from a color-coated carrier are spun on a substrate to be printed, is e.g. from US-B 6,241, 344 known.
- energy is introduced by the carrier into the ink on the carrier at the position where the substrate is to be printed.
- a part of the color evaporates, so that it dissolves from the carrier. Due to the pressure of the evaporating paint, the ink droplet thus dissolved is thrown onto the substrate.
- Directed penetration of energy can be transferred in this way, the color corresponding to a pattern to be printed on the substrate.
- the necessary energy for transferring the color is introduced, for example, by a laser.
- the carrier on which the paint is applied for example, is a circulating belt, on which by means of a coating device in front of the printing area color is applied.
- the laser is located inside the circulating belt, so that the laser acts on the carrier on the side facing away from the paint.
- the disadvantage of such methods in general is that the print quality depends to a large extent on the homogeneity of the conditions involved in the process.
- differences are, for example, differences in the thickness of the ink application and, for example, the electrostatic state of the substrate to be printed.
- a common polymer or paper surface has a completely disordered static surface charge through various rolling processes, which is also very inhomogeneous in their voltage potential.
- the resulting print image is prone to inexact edges and edges, which is mainly caused by undefined spraying and misting of the paint. Another cause of inexact edges and edges is also uneven bleeding of the ink on the substrate to be printed.
- the object of the present invention is to provide a method for producing a structured metallic coating on a substrate, in which a structured metallic layer with clearly defined exact edges and edges is produced.
- the object is achieved by a method for producing a structured metallic coating on a substrate, comprising the following steps:
- a monolayer of the surface-hydrophobizing substance is applied to the surface of the substrate.
- isolated layers of 2 or 3 layers can be formed.
- the monolayer or oligolayer of a surface-hydrophobizing substance By applying the monolayer or oligolayer of a surface-hydrophobizing substance to the surface of the substrate, it is achieved that the substance containing the electrically conductive particles applied to the substrate does not run much or, in the optimal case, does not retain its structure.
- an influence of the surface-hydrophobizing substance on the properties of the structured metallic coating and the semiconductor substrate can be kept so low, in particular in the case of a substrate made of a semiconductor material, that the properties of a product to be produced not be adversely affected.
- the more precise edge course possible in this way furthermore offers the advantage that a sharp, high-resolution printed image with structures that are significantly smaller than 100 ⁇ m can be printed.
- Such a high-resolution print image with structures below 100 ⁇ m is advantageous, for example, for the production of solar cells.
- silver pastes are usually applied by screen printing techniques to a silicon nitride-coated or passivated surface of a wafer.
- screen printing techniques structures that are significantly smaller than 100 microns can not be reliably printed.
- an ink droplet is transferred to the substrate, for example the solar wafer.
- the substrate for example the solar wafer.
- inks whose viscosities are significantly lower than those of comparable screen-printing pastes are suitable.
- the ink runs on the surface.
- the coating according to the invention with a surface-hydrophobizing substance on the already silicon nitride-coated or passivated wafers, bleeding is reduced or even suppressed in the ideal case.
- the generated print image thus has sharper edges and a finer print image is possible.
- wafers coated with silicon nitride it is also possible to use wafers coated with aluminum oxide (Al 2 O 3 ) or with silicon carbide (SiC).
- Al 2 O 3 aluminum oxide
- SiC silicon carbide
- the printed image usually has two to three broader stripes on which later ribbons are soldered to connect several cells. Furthermore, the cells have a very thin, highly electrically conductive grid. The requirements for this grid are very high. It has to be highly conductive, but it must only hinder the incidence of light as little as possible. For this reason, the individual tracks of the grid must be applied as narrow and thick as possible.
- an ink which contains electrically conductive particles in a solvent.
- the electrically conductive particles which are applied to the substrate for producing the structured metallic coating preferably comprise silver, copper, iron, tin, nickel or mixtures or alloys of these materials.
- electrically conductive particles which contain silver and / or optionally nickel are used.
- the particles used can take any form known in the art. It is also possible to use two or more different particles, wherein the particles may differ in their size, shape or in the material. Usually, particles of different shapes, for example spherical particles and platelet-shaped particles, are used. The particles may also differ in their size in particular.
- the size of the particles is generally chosen so that the dimensions of the structure to be printed are significantly larger than the maximum dimensions of the particles.
- particles with a size of a maximum of 10 microns are used.
- nanoparticles as particles in the substance to be applied to the substrate.
- any solvent known in the art is suitable. Suitable solvents are, for example, water or organic solvents.
- the substance containing electrically conductive particles containing matrix materials are, for example, ABS (acrylonitrile-butadiene-styrene); ASA (acrylonitrile-styrene-acrylate); acrylated acrylates; alkyd resins; Alkylvinylacetate; Alkylene vinyl acetate copolymers, especially methylene vinyl acetate, ethylene vinyl acetate, butylene vinyl acetate; Alkylenvinylchlorid copolymers; amino resins; Aldehyde and ketone resins; Cellulose and cellulose derivatives, in particular hydroxyalkylcellulose, cellulose esters, such as acetates, propionates, butyrates, carboxyalkylcelluloses, cellulose nitrate; epoxy acrylates; epoxy resins; modified epoxy resins, for example bifunctional or polyfunctional bisphenol A or bisphenol F resins, polyfunctional epoxy novolac resins, brominated epoxy resins, cycloaliphatic epoxy
- polyacrylic esters and polystyrene copolymers for example polystyrene maleic anhydride copolymers; Polystyrene (impact or not impact modified); Polyurethanes, uncrosslinked or crosslinked with isocyanates; polyurethane acrylates; Styrene-acrylic copolymers; Sty rol-butadiene block copolymers (for example, Styroflex ® or Styrolux ® of BASF AG, K- Resin TM CPC); Proteins, such as casein; Styrene-isoprene block copolymers; Triazine Resins, Bismaleimide Triazine Resins (BT), Cyanate Ester Resin (CE), Allylated Po lyphenylene ether (APPE). Furthermore, mixtures of two or more polymers can form the matrix material.
- polystyrene maleic anhydride copolymers for example polystyrene maleic anhydride copolymers;
- the matrix material may further contain fillers.
- Suitable fillers are, for example, glass frit or organometallic compounds.
- Suitable solvents are, for example, aliphatic and aromatic hydrocarbons (for example n-octane, cyclohexane, toluene, xylene), alcohols (for example methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, amyl alcohol ), polyhydric alcohols such as glycerol, ethylene glycol, propylene glycol, neopentyl glycol, alkyl esters (for example methyl acetate, ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate, isopropyl acetate, 3-methylbutanol), alkoxy alcohols (for example methoxypropanol, methoxybutanol, ethoxypropanol), alkylbenzenes (for example ethylbenzene, isopropylbenzene), butylglycol
- the application of the monolayer of the surface-hydrophobizing substance avoids or limits the substance containing the electrically conductive particles.
- the application of the monolayer of the surface-hydrophobizing substance is carried out by any known to the expert method.
- the surface-hydrophobizing substance is applied to the surface of the substrate by vapor deposition, spraying or dipping. If the surface-hydrophobizing substance is applied to the substrate by vapor deposition, the vapor deposition is preferably carried out in vacuo.
- the pressure range for the vapor deposition is typically in the range of atmospheric pressure to 10 "6 mbar (abs), preferably in the range of 100 mbar (abs) to 10" 6 mbar (abs).
- the vapor deposition is usually carried out at a Temperature in the range of 10 to 500 0 C, preferably in the range of 10 to 100 0 C, in particular at room temperature.
- a solution containing the surface-hydrophobing substance is usually sprayed onto the substrate and then dried. Upon drying, a self-assembling monolayer of the surface-hydrophobizing substance deposits on the substrate. Even in immersion methods in which the substrate to be coated is immersed in a solution containing the surface-hydrophobizing substance or the substrate is placed in a highly diluted solution of the surface-hydrophobizing substance, a self-assembling monolayer of the surface-hydrophobizing substance deposits on the surface of the substrate. In order to wash off silanes that have not reacted with the surface, the substrate is generally rinsed off or cleaned after spraying or dipping with a solvent.
- Preferred surface-hydrophobizing substances are compounds (S) which have at least one, preferably exactly one, at least one, for example mono- to trisubstituted, preferably exactly triply alkoxylated silyl group and at least one, preferably exactly one group R which has hydrophobic properties.
- the compounds (S) are those of the formula
- X is alkoxy, carboxylic acid, for example acetate, halogen, for example chlorine, amines or hydroxy, n is an integer from 1 to 3, preferably 3.
- X is preferably ethoxy, methoxy or chlorine, where, when n is greater than 1, each X radical can also be, independently of one another, one of the abovementioned groups, it being possible for the individual X radicals to differ from one another.
- R is an organic, 1 to 20 carbon atoms comprising hydrophobic radical, wherein at n ⁇ 3, the radicals R may be different.
- R is 2-o alkyl represents d- to C, C 6 to Ci ⁇ -aryl or C 5 - to C 2 - cycloalkyl.
- Examples of C 1 -C 2 -alkyl are methyl, ethyl, n-propyl, n-propyl, n-butyl, n-butyl, sec-c-butyl, tert-butyl, n-hexyl, n Heptyl, n-octyl, 2-ethylhexyl, n-decyl, n-undecyl, n-dodecyl, n-tetradecyl, n-hexadecyl, n-octadecyl and n-eicosyl.
- C 1 -C 4 -alkyl examples are methyl, ethyl, n-propyl, n-butyl, n-butyl, n-butyl, sec-butyl and tert-butyl.
- C 5 -C 2 cycloalkyl groups are cyclopentyl, cyclohexyl, cycloheptyl, cyclooctene tyl, cyclononyl, cyclodecyl, cycloundecyl and cyclododecyl; preferred are cyclopentyl, cyclohexyl and cycloheptyl; especially preferred is cyclohexyl.
- C 6 -C 8 -aryl groups are, for example, phenyl, 1-naphthyl, 2-naphthyl, 1-anthryl, 2-anthryl, 9-anthryl, 1-phenanthryl, 2-phenanthryl, 3-phenanthryl, 4-phenanthryl, 9-Phe nanthryl, terphenyl, preferably phenyl, 1-naphthyl and 2-naphthyl, more preferably phenyl.
- radical R to d- to C 2 o alkyl or C ⁇ -Cis-aryl more preferably d- to C2o-alkyl and very particularly preferably Ce to C 2 alkyl.
- Preferred radicals R are methyl, ethyl, / so-propyl, n-propyl, n-butyl, / so-butyl se / c-butyl, te / f-Buytl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl , Dodecyl and phenyl, particular preference is given to methyl, ethyl, n-butyl, isobutyl, tert-butyl, pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl and phenyl, very particular preference to isobutyl, Pentyl, hexyl, heptyl, octyl, nonyl, decyl, undecyl, dodecyl
- Suitable compounds (S) are, for example, isooctyltrimethoxysilane, isooctyltriethoxysilane, n-butyltrimethoxysilane, n -tactyltriethoxysilane, isobutyltrimethoxysilane, isobutyltriethoxysilane, phenyltrimethoxysilane and phenyltriethoxysilane.
- R is a partially fluorinated or perfluorinated C 4 - to C 2 O- alkyl, preferably C 4 - to C 8 -alkyl and in particular C 8 to Ci 2 alkyl.
- R 1 When R is a partially fluorinated alkyl, it is preferable to use a silane of the general formula (I) used.
- R 1, R 2, R 3 are each independently C 2 to C o alkyl, C 6 to C 8 - aryl or C 5 - to C
- silanes are used as the surface-hydrophobizing substance, they usually bind with at least one of the radicals R 1, R 2 , R 3 to the surface of the substrate.
- the radical R 4 is away from the substrate and forms the hydrophobic surface.
- Suitable silanes which can be used as surface-hydrophobizing substance are, for example, n-octyltrichlorosilane, n-nonyltrichlorosilane, n-decyltrichlorosilane, n-undecyltrichlorosilane, n-dodecyltrichlorosilane, phenyltrichlorosilane, n-octyltriethoxysilane, n-nonyltriethoxysilane, n-decyltriethoxysilane, n- Undecyltriethoxysilane, n-dodecyltriethoxysilane, phenyltriethoxysilane, n-octyltrimethoxysilane, n-nonyltrimethoxysilane, n-decyltrimethoxysilane, n-und
- the substrate is usually a wafer made of a semiconductor material.
- the semiconductor material used is generally a material based on silicon.
- the surface of the wafer to which the structured metallic coating is applied is usually first coated or passivated with silicon nitride.
- the coating with silicon nitride or the passivation is also carried out in currently produced solar cells and is known to the person skilled in the art.
- the surface-hydrophobizing substance is then applied to the passivated surface or surface coated with silicon nitride as a monolayer or oligolayer.
- the grid customary for solar cells is printed from the substance containing the electrically conductive particles.
- the substance containing the electrically conductive particles it is possible to print the substance containing the electrically conductive particles over one another in several layers. By printing the substance containing the electrically conductive particles and then curing the matrix material contained in the substance and evaporating the solvent, a structured metallic coating is achieved on the surface.
- the substance containing electrically conductive particles used for the production of solar cells contains 50 to 90% by weight of electrically conductive particles, preferably 65 to 85% by weight and in particular 70 to 80% by weight of electrically conductive particles, 0 to 20 %
- matrix material preferably 1 to 15% by weight of matrix material, in particular 3 to 10% by weight of matrix material and 0 to 30% by weight of solvent, preferably 5 to 25% by weight of solvent and in particular 5 to 20% by weight % Solvent.
- solvent By adding the solvent, the viscosity of the substance containing the electrically conductive particles can be adjusted in accordance with the printing method used.
- any printing method known to the person skilled in the art is suitable as the printing method for applying the substance containing the electrically conductive particles.
- Conventional printing methods include, for example, screen printing method, ink jet printing method, pad printing method or laser printing method.
- the substance containing the electrically conductive particles is preferably applied by a laser printing method.
- the substance to be printed containing the electrically conductive particles is first applied to a support.
- the application of the substance to the carrier can be carried out by any known to the expert method.
- the substance containing the electrically conductive particles is applied to the carrier by means of a transfer roller.
- a color carrier a flexible carrier is preferably used.
- the color carrier, which is coated with the substance to be printed on, containing the electrically conductive particles has a ribbon-shaped design.
- Very particular preference is the flexible carrier of a film.
- the thickness of the carrier is preferably in the range of 1 .mu.m to about 500 .mu.m. It is advantageous to make the carrier as possible in a small thickness, so that the energy introduced by the carrier is not scattered in the carrier and so a clean print image is generated.
- Suitable materials for the carrier are transparent polymers, for example, for the energy used.
- the energy used to vaporize the ink and transfer it to the substrate to be printed is preferably a laser.
- a laser is that the laser beam used can be bundled to a very small cross-section. Thus, a targeted energy input is possible.
- a suitable absorber is further included, which absorbs the laser light and converts it into heat.
- the carrier is made of a material transparent to the laser radiation and the absorber, which converts the laser light into heat, is contained in the substance containing the electrically conductive particles.
- Suitable absorbers are, for example, carbon black, metal nitrides or metal oxides.
- Suitable lasers which can be used to introduce energy into the paint are, for example, fiber lasers operating in the fundamental mode.
- a further improvement of the printed image is also achieved if the gap between the substrate to be printed and the carrier, on which the substance containing the electroconductive particles is applied, has a pressure gap in the range of 0 to 2 mm, especially in the range of 0.01 to 1 mm.
- the smaller the printing gap between the carrier and the substrate to be printed the less the drop expands when it strikes the substrate to be printed, and the more uniform the printed image remains.
- it is also important to ensure that the substrate to be printed does not touch the carrier coated with the substance containing the electrically conductive particles, so that the undesired locations of the substance containing the electrically conductive particles are not transferred from the carrier to the substrate to be printed.
- the method according to the invention is also suitable, for example, for producing any other electronic components, for example for the production of printed circuit boards.
- the substrate used is usually a dielectric as a suitable printed circuit board substrate.
- Conventional printed circuit board substrates are made, for example, of reinforced or unreinforced polymers.
- Suitable polymers are, for example, bifunctional and polyfunctional bisphenol A and F-based epoxy resins, epoxy novolac resins, brominated epoxy resins, cycloaliphatic epoxy resins, bismaleimide-triazine resins, polyimides, phenolic resins, cyanate esters, melamine resins or amino resins, phenoxy resins, allylated polyphenylene ethers, polysulfones, polyamides, silicone and fluoro resins, and combinations thereof.
- the printed circuit board substrate is first coated with a monolayer of a surface-hydrophobizing substance.
- a surface-hydrophobizing substance the silanes described above are also preferably used in the production of printed circuit boards.
- the electrically conductive particles can also be carbon particles, for example in the form of nanotubes, in addition to the above-mentioned metals.
- An electronic component produced by the method according to the invention generally comprises a substrate to which a structured electrically conductive surface is applied, wherein a monolayer of the surface-hydrophobizing material is applied to the substrate and the structured electrically conductive surface is applied to the monolayer.
- the substrate is generally a wafer made of a semiconductor material, in particular a silicon-containing semiconductor material.
- the substrate is a printed circuit board substrate.
- 200 ⁇ l of 1H, 1H, 2H, 2H-perfluorooctyltriethoxysilane are placed in a vacuum desiccator.
- preprocessed silicon nitride coated multicrystalline silicon wafers are placed in the vacuum desiccator.
- the vacuum desiccator is used closed and it is applied for 3 min a dynamic oil pump vacuum.
- the wafer surface is brought into contact with the 1 H, 1 H, 2H, 2H-perfluorooctyltriethoxysilane via the gas phase over a period of 12 hours in a static vacuum.
- the 11-1.1 H, 2H, 2H-perfluorooctyltriethoxysilane forms an effective surface passivation, the wetting behavior changes, and the surface energy, as measured by Owens and Wendt, is lowered from about 40.1 mN / m to about 12.6 mN / m ,
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Laminated Bodies (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Paints Or Removers (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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EP10726485A EP2446720A2 (de) | 2009-06-22 | 2010-06-18 | Verfahren zur herstellung einer strukturierten metallischen beschichtung |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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EP09163346 | 2009-06-22 | ||
PCT/EP2010/058612 WO2010149579A2 (de) | 2009-06-22 | 2010-06-18 | Verfahren zur herstellung einer strukturierten metallischen beschichtung |
EP10726485A EP2446720A2 (de) | 2009-06-22 | 2010-06-18 | Verfahren zur herstellung einer strukturierten metallischen beschichtung |
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EP10726485A Withdrawn EP2446720A2 (de) | 2009-06-22 | 2010-06-18 | Verfahren zur herstellung einer strukturierten metallischen beschichtung |
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US (1) | US20120132274A1 (ja) |
EP (1) | EP2446720A2 (ja) |
JP (1) | JP2012531034A (ja) |
KR (1) | KR20120110084A (ja) |
CN (1) | CN102804936A (ja) |
AU (1) | AU2010264870A1 (ja) |
CA (1) | CA2766244A1 (ja) |
IL (1) | IL216898A (ja) |
MX (1) | MX2011013434A (ja) |
SG (1) | SG176819A1 (ja) |
TW (1) | TW201112271A (ja) |
WO (1) | WO2010149579A2 (ja) |
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RU2553774C2 (ru) | 2010-02-17 | 2015-06-20 | Басф Се | Способ создания электропроводных скреплений между солнечными элементами |
DE102013215638A1 (de) * | 2013-08-08 | 2015-02-12 | Krones Ag | Vorrichtung zum Bedrucken von Behältern |
JP2015050120A (ja) * | 2013-09-03 | 2015-03-16 | 株式会社小森コーポレーション | 機能性膜のパターニング方法、電子デバイスの製造方法、透明導電性フィルム |
DE102013113248A1 (de) * | 2013-11-29 | 2015-06-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Substrate mit gut haftenden metallischen Oberflächenstrukturen, drucktechnisches Verfahren zu deren Herstellung sowie Verwendung der Substrate im Rahmen verschiedener Verbindungstechniken |
DE102015103857A1 (de) * | 2014-12-01 | 2016-06-02 | Schott Ag | Miniaturisiertes elektronisches Bauelement mit verringerter Bruchgefahr sowie Verfahren zu dessen Herstellung |
JP6581176B2 (ja) * | 2014-07-02 | 2019-09-25 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | 有機エラストマーを含む導電性ペーストを使用した太陽電池電極の組み立て方法 |
CN104934095A (zh) * | 2015-05-25 | 2015-09-23 | 铜陵宏正网络科技有限公司 | 一种印刷电路板导电银浆及其制备方法 |
WO2017087475A1 (en) * | 2015-11-16 | 2017-05-26 | Western Michigan University Research Foundation | Process for binding conductive ink to glass |
CN105507061A (zh) * | 2015-11-27 | 2016-04-20 | 湖北大学 | 一种超疏水涂层及其制备方法 |
FR3054146B1 (fr) * | 2016-07-19 | 2018-07-13 | Compagnie Generale Des Etablissements Michelin | Procede de depot d'un revetement adhesif au metal, hydrophobe et electriquement conducteur |
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DE3702643A1 (de) | 1986-02-10 | 1987-08-13 | Toshiba Kawasaki Kk | Tintenstrahlschreiber sowie schreibkopf und schreibkopfkassette dafuer |
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2010
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- 2010-06-18 JP JP2012515509A patent/JP2012531034A/ja active Pending
- 2010-06-18 AU AU2010264870A patent/AU2010264870A1/en not_active Abandoned
- 2010-06-18 WO PCT/EP2010/058612 patent/WO2010149579A2/de active Application Filing
- 2010-06-18 SG SG2011092095A patent/SG176819A1/en unknown
- 2010-06-18 KR KR1020127001850A patent/KR20120110084A/ko not_active Application Discontinuation
- 2010-06-18 CN CN2010800279151A patent/CN102804936A/zh active Pending
- 2010-06-18 US US13/380,259 patent/US20120132274A1/en not_active Abandoned
- 2010-06-18 EP EP10726485A patent/EP2446720A2/de not_active Withdrawn
- 2010-06-18 MX MX2011013434A patent/MX2011013434A/es active IP Right Grant
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CN102804936A (zh) | 2012-11-28 |
TW201112271A (en) | 2011-04-01 |
WO2010149579A3 (de) | 2011-04-07 |
IL216898A0 (en) | 2012-03-01 |
US20120132274A1 (en) | 2012-05-31 |
KR20120110084A (ko) | 2012-10-09 |
SG176819A1 (en) | 2012-01-30 |
JP2012531034A (ja) | 2012-12-06 |
AU2010264870A1 (en) | 2012-01-19 |
WO2010149579A2 (de) | 2010-12-29 |
IL216898A (en) | 2015-03-31 |
MX2011013434A (es) | 2012-03-06 |
CA2766244A1 (en) | 2010-12-29 |
RU2012101934A (ru) | 2013-07-27 |
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