Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
  • H10F77/00—Constructional details of devices covered by this subclass
  • H10F77/50—Encapsulations or containers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/852—Encapsulations
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/852—Encapsulations
  • H10H20/853—Encapsulations characterised by their shape
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
  • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
  • H10H20/80—Constructional details
  • H10H20/85—Packages
  • H10H20/8506—Containers

Definitions

• An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are specified.
• An object to be solved is to specify a particularly compact and aging-stable semiconductor component.
• the optoelectronic semiconductor component comprises a carrier.
• the carrier may be a metallic carrier strip (also leadframe).
• the carrier may be a metallic carrier strip (also leadframe).
• Carrier strip then formed with two strip-shaped metal strips, which serve as electrical contact surfaces.
• the carrier has a mounting surface and a bottom surface opposite the mounting surface.
• the carrier may also be formed with a base body of electrically insulating material, for example a ceramic.
• the main body can then be provided on the mounting surface and / or the bottom surface with connection points and conductor tracks.
• the carrier has at least one opening, wherein the opening extends from the mounting surface to the bottom surface of the carrier.
• breakthrough means that there is a penetration in the carrier, for example in the form of a hole.
• the aperture is then bounded by the carrier, so that the breakthrough has at least one contiguous side surface.
• At least one optoelectronic semiconductor chip is mounted on the mounting surface.
• the optoelectronic semiconductor chip may, for example, be a luminescence diode chip.
• the luminescence diode chip can be a luminescent or laser diode chip which emits radiation in the range from ultraviolet to infrared light.
• the LED chip emits light in the visible or ultraviolet region of the spectrum of the electromagnetic radiation.
• a plurality of semiconductor chips are mounted on the carrier.
• the semiconductor chip (s) preferably does not cover the breakthrough.
• the optoelectronic semiconductor component has a radiation-permeable potting body.
• the potting body is permeable to the electromagnetic radiation generated by the semiconductor chip. That is, radiation coming from the Semiconductor chip is generated, is not absorbed by the potting body substantially. "Substantially" means in this case that the encapsulation is at least 80%, preferably 90%, permeable to the electromagnetic radiation primarily generated by the optoelectronic semiconductor chip.
• the potting body encloses the at least one optoelectronic semiconductor chip at least in places.
• “enclosing in places” means that the potting body surrounds the exposed outer surfaces of the semiconductor chip in a form-fitting manner, at least locally or completely, and the potting body directly adjoins at least parts of the exposed outer surfaces of the semiconductor chip. Furthermore, it is possible that in addition the mounting surface of the carrier is at least in places covered by the potting. Preferably, the stands
• the potting body is arranged at least in places in the opening of the body. This means that parts of the potting body fill at least in places the breakthrough. In other words, this means that the potting body is also introduced in the breakthrough. However, the potting body does not have to completely fill the breakthrough. It is advantageously made possible by the introduction of the potting in the breakthrough that the potting body is anchored to the carrier at least in the lateral direction, ie parallel to the mounting surface of the carrier.
• the potting body is a contiguous body, so that the semiconductor chip and the opening are connected to each other by the potting body.
• the semiconductor component comprises a carrier which has a mounting surface and at least one aperture, wherein the aperture differs from the semiconductor device
• the optoelectronic semiconductor component has at least one optoelectronic semiconductor chip which is fastened on the mounting surface.
• the optoelectronic semiconductor component comprises a radiation-permeable potting body which encloses the at least one optoelectronic semiconductor chip at least in places, wherein the potting body is arranged at least in places in the opening of the carrier.
• the optoelectronic semiconductor component described here is based, inter alia, on the knowledge that a potting body of a semiconductor chip, at least in places surrounded by the potting and the from
• Potting body at least partially covered carrier often already after a short period of time triggers (even delaminated). This means that, for example, a gap or an interruption then forms between the potting body and the semiconductor chip, as a result of which the optoelectronic semiconductor component can no longer function to its full potential, since it will increase radiation losses or even an increase in the potting process of the potting body from the semiconductor chip Heat development can come.
• the described here Optoelectronic semiconductor device of the idea use to use a carrier with at least one breakthrough, wherein the breakthrough extends from a mounting surface to a bottom surface of the carrier and at the same time the potting body is at least in places in the opening of the carrier.
• the potting material consists of a silicone, an epoxide, a mixture of silicone and epoxy or contains at least one of these materials.
• the potting material is a material which is permeable to the electromagnetic radiation generated by the semiconductor chip.
• a radiation outcoupling surface of the potting body is formed like a lens.
• the electromagnetic radiation generated by the semiconductor chip is at an interface of the
• the potting compound / air interface forms the radiation coupling-out surface of the potting body, via which the electromagnetic radiation is coupled out of the component.
• the radiation decoupling surface is formed like a lens.
• the radiation decoupling surface has a curved outer surface like that of a converging lens.
• such a semiconductor device is possible, which does not require downstream optics, for example, to focus the radiation emitted by the semiconductor chip. This makes it possible to provide a device which has a very small vertical extent. "Vertical" in this context means perpendicular to the mounting surface.
• the at least one aperture is formed by at least two recesses in the carrier, which differ from each other in terms of their maximum lateral extent.
• Maximum lateral extent refers to the maximum distance between two points of a recess in the lateral direction. If a recess is square in a plan view, then the maximum lateral extent denotes, for example, the distance between two diagonally opposite edges of the recess. If a recess is circular, the maximum lateral extent may be the diameter. Further, a recess may be composed of a plurality of recesses with different lateral dimensions. It is also possible that the one recess, for example, a cuboid and a second recess is a cylinder-like punched. The respective maximum lateral extent of the two recesses differs from each other in any case.
• the breakthrough is then formed by a "mounting surface side” and a “bottom surface side” recess.
• “Montage vomtician” means in this context that the Recess is introduced from the mounting surface forth in the carrier.
• the bottom surface side recess has a greater maximum lateral extent than the mounting surface side recess.
• the depths, that is to say the vertical extent of each recess, must then together at least in places comprise the thickness, that is to say the vertical extent, of the carrier at the locations of the recesses.
• the two recesses can form a breakthrough.
• the two recesses may have a common center axis in the vertical direction.
• the recesses are formed by cylindrical openings with mutually different radii.
• the cylindrical openings may represent holes and be introduced by drilling into the carrier. It is also possible that the cylindrical openings are introduced by means of etching or punching in the carrier. Both mounting surface side and bottom surface side then a recess is formed in each case by at least one cylindrical opening.
• the cylindrical opening introduced via the mounting surface has a smaller radius than the cylindrical opening introduced over the bottom surface.
• the at least one aperture has at least one projection.
• Breakthrough has several projections.
• the breakthrough is then formed for example by a plurality of holes, each with different radii. That is, then, that the aperture has a plurality of step-like projections and the aperture is thus structured in the vertical direction, for example by recesses of different sizes.
• the at least one opening is embodied in a funnel shape at least in places, wherein the opening tapers in the lateral direction in the direction of the mounting surface in the lateral direction, starting from the floor surface.
• "Funnel-shaped" in this context means that the aperture is frusto-conical and therefore the aperture has at least one continuous and contiguous side surface and the radius of the aperture in the funnel-shaped region changes in the vertical direction.
• the opening is formed by a funnel-shaped recess and a bore. Then, at the point of transition between the bore and the funnel, a projection in the form of a step is formed. Further, for example, it is possible for the aperture to be funnel-shaped over the entire vertical extent of the carrier.
• the breakthrough is funnel-shaped over its entire vertical extent, the fact that the aperture tapers in its lateral dimensions toward the mounting surface results in catching or anchoring of the potting body in FIG allows the breakthrough, which prevents not only in the lateral, but also in the vertical direction, a detachment of the potting of the semiconductor chip and the carrier.
• a projection for example in the form of a step, so the breakthrough in this case prevents not only a detachment of the potting of the semiconductor chip and the carrier in the lateral direction, but also a detachment of the potting of the semiconductor chip and the carrier in vertical direction.
• the potting body "hooks" with the at least one protrusion located in the opening and thus fixes the potting body in its position to the semiconductor chip and the carrier.
• the breakthrough thus represents an anchoring structure of the potting body in the carrier in each of the embodiments described here.
• the potting body detaches itself from the carrier and the semiconductor chip and thus, for example, between the semiconductor chip and the semiconductor chip Potting forms a gap or an interruption.
• the locations of the carrier not covered by the potting body are covered at least in places by a housing body.
• the housing body covers all exposed areas of the bottom surface as well as all exposed areas of the mounting surface and the side surfaces of the carrier.
• the housing body may be formed with a duroplastic or thermoplastic material, such as an epoxy, or may be formed with a ceramic material or consist of such.
• the at least one semiconductor chip is surrounded laterally by elevations and / or countersinks of the housing body. The housing body then covers at least in places the mounting surface. For example, in the lateral direction, a continuous, coherent elevation surrounds the semiconductor chip in a circular, oval or rectangular manner.
• the elevations are formed at least in places like a bead.
• Bead-like here means that the surveys encircle the semiconductor chip in a circle and are configured in a cross-sectional view, for example, as an inverted "u” or "v".
• the depressions in the housing body are trenches.
• "Trenches” describes in this context, for example, a reduction in the form of a recess in the
• the trenches then surround the semiconductor chip, for example in a circular shape, wherein the recess is, for example, in cross-section "u" - or "v" -shaped.
• the potting body reshapes the elevations at least in places. "Formed" in this context means that the potting body is in direct contact with the elevations, the elevations at least in places einschitt and so between the potting and the
• the potting is arranged on both sides of the highest point of a survey.
• the "highest point” is the one point where the extent of the survey in the vertical direction has the greatest Aussteckung.
• the elevations form anchoring structures for the potting body, whereby, for example, a lateral detachment of the potting body from the housing body is avoided.
• openings in the carrier has the advantage of creating a component which not only has anchoring structures, for example in the form of elevations in the housing body, but also has anchoring structures in the carrier in the form of apertures.
• anchoring structures in the housing body are thus combined with anchoring structures in the carrier.
• the potting body is arranged at least in places in the depressions. Preferably, the potting body is disposed completely in the subsidence. The subsidence prevent, as well as the surveys, a detachment of the potting of the
• Housing body for example, in the lateral direction.
• the depth of the depressions can be reduced, since, for example, the anchoring structures in the carrier already act against a lateral detachment of the potting body.
• a carrier composite is first provided.
• Carrier composite may be a composite of carriers for a variety of devices. The connection between the individual carriers will be solved later by a separation into individual components. For example, the carriers are each one
• Carrier strip which is then formed by two electrically isolated strip-shaped metal strips.
• each carrier of the carrier composite In a further step, at least one breakthrough is introduced into each carrier of the carrier composite.
• a cylindrical opening is introduced by etching or punching in each carrier.
• the two cylindrical openings each have a different radius, so that forms within a breakthrough, a projection in the form of a step.
• both central axes of the cylindrical openings do not overlap and the cylindrical openings are therefore offset from each other.
• the depth of the respective cylindrical openings must at least together have the thickness of the support at the locations of the cylindrical openings, so that the opening forms.
• the breakthrough is freely accessible both from the mounting surface and from the bottom surface.
• At least one optoelectronic semiconductor chip is applied to a mounting surface of each carrier.
• the optoelectronic semiconductor chip is fixed, for example by means of soldering on the carrier and electrically contacted.
• the at least one semiconductor chip and the at least one breakthrough are potted with a potting material, which then hardens to a potting.
• a potting material which then hardens to a potting.
• the potting body can be formed with a permeable to electromagnetic radiation material, such as a silicone.
• a permeable to electromagnetic radiation material such as a silicone.
• the potting body flows into the at least one breakthrough and cures within the breakthrough. After curing, the potting body is anchored in the opening. It is then so formed a potting, which is introduced both in the breakthrough, as well as the mounting surface and covers all exposed outer surfaces of the semiconductor chip at least in places.
• the potting body represents a coherent body.
• the carrier composite is separated into individual carriers.
• the singulation can by means of
• sequence shown can be reversed. This may mean, for example, that the separation of the carrier composite into individual carriers occurs before the application of the at least one optoelectronic semiconductor chip on a mounting surface of each carrier.
• a carrier composite is first provided. At least one breakthrough is introduced in each carrier.
• At least one optoelectronic semiconductor chip is applied to a mounting surface of each carrier. Furthermore, the at least one semiconductor chip and the at least one breakthrough are potted with a potting material, which subsequently forms a potting compound
• Curing body hardens.
• the carrier composite is separated into individual carriers.
• the carrier composite is cast with a housing body material prior to casting with the potting material. This advantageously allows, for example, the reshaping of The housing body formed elevations / subsidence through the potting.
• FIG. 1 shows a schematic perspective view
• FIG. 2 shows a schematic perspective view
• FIG. 3 shows a plan view of an exemplary embodiment of an optoelectronic device described here
• FIG. 4 shows in a perspective bottom view an exemplary embodiment of an optoelectronic semiconductor component described here.
• FIGS. 5a, 5b, 5c and 5d show, in schematic sectional representations, individual production steps for producing an exemplary embodiment of an optoelectronic semiconductor component described here.
• FIG. 1 shows, by means of a schematic perspective sectional illustration, an optoelectronic semiconductor component 100 having a carrier 1, an optoelectronic semiconductor chip 2 which is fastened to a mounting surface 11 of the carrier 1, a housing body 4 and a potting body 5 according to the exemplary embodiment of FIG described component explained.
• the carrier 1 is a metallic carrier strip, through which the semiconductor chip 2 is electrically contacted.
• the carrier 1 is formed by two metallic carrier parts 121 and 120. The two carrier parts 121 and 120 are connected to each other via the housing body and thereby stabilized to each other.
• the housing body 4 isolates the two carrier parts 121 and 120 from each other.
• the housing body 4 is formed with a thermosetting or thermosetting material, for example an epoxy.
• the potting 5 forms a radiation outcoupling surface 51, by which the electromagnetic radiation emitted by the semiconductor chip 2 can be coupled out of the component.
• the radiation decoupling surface 51 is formed in the form of a lens in the form of a converging lens.
• the openings 3 are formed by means of two recesses 31 and 32.
• the two recesses 31 and 32 are cylindrical openings in the form of bores.
• the recesses 31 and 32 Middle axes M31 and M32.
• the recess 31 is arranged at a lateral distance D from the side surfaces 21 of the semiconductor chip 2 to the central axis M31.
• the recess 32 has a diameter D2 and the recess 31 has a diameter D1.
• the central axes M31 and M32 do not overlap, so that the two recesses 31 and 32 are offset from each other.
• the recess 31 has a smaller diameter than the recess 32. Because the recesses 31 and 32 have a different diameter, that is to say a different lateral dimension, a projection 60 in the form of a step forms within each aperture.
• the potting body 5 is arranged completely in the two openings 3, so that the potting body 5 is anchored in the openings 3 due to the projections 60 located in the openings 3 in the vertical and lateral direction with the carrier 1.
• the potting body is fixed in both the lateral and in the vertical direction, so that neither a gap or an interruption forms between the mounting surface 11 nor between the outer surfaces 21 of the semiconductor chip 2 and the potting body 5.
• a detachment of the potting body 5 is prevented.
• a semiconductor device 100 is provided which is very particularly resistant to aging.
• the housing body 4 has bead-like projections 41, which are formed by the potting body 5 on both sides of their maximum vertical extent.
• the elevations 41 surround the semiconductor chip 2 and the openings 3 in a circular manner. “Formed” means that the potting 5 in is in direct contact with the surveys and so formed between the surveys 41 and the potting 5 neither a gap nor an interruption.
• the elevations 41 allow anchoring of the potting body 5 in the lateral direction, so that detachment of the potting body 5 from the housing body 4 is avoided at least in the lateral direction.
• a vertical extent A of the projections 41 may be smaller than in previous semiconductor devices, since already the openings 3 anchor the potting body 5 in the lateral direction. Because the vertical extent of the projections 41 is smaller, the side surfaces 42 are also reduced. As a result, it is possible for the smallest possible area of the housing body 4 to be exposed to the electromagnetic radiation emitted by the semiconductor chip 2. Thus, the smallest possible area proportion of the housing body is damaged or heated by impinging radiation.
• the small vertical extent of the elevations 41 allows a component which is particularly flat.
• the maximum vertical extent of the elevations 41 is two times greater than the vertical extent of the semiconductor chip 2. It is also possible that the semiconductor chip 2 has the same or a greater maximum vertical extent as the elevations 41.
• the carrier 1 has a further anchoring structure 13 in the form of a step 131.
• the Anchoring structure 13 is completely transformed from the housing body 4 and additionally prevents detachment of the support 1 from the housing body 4, for example in the vertical direction.
• FIG. 2 shows a schematic perspective view
• the recess 33 is formed oval along the extension axis E, while the recess 34 is a bore. From the bottom surface 12 in the direction of the mounting surface 11, a second recess 35 is inserted into the carrier.
• the recess 35 like the recess 33 has an oval basic shape along the
• FIG. 3 shows, in a schematic perspective top view, the optoelectronic semiconductor component 100 according to FIGS. 1 and 2.
• the openings 3 in the carrier 1 and the semiconductor chip 2 can be seen.
• the elevations 41 surround the semiconductor chip 2 in a circle.
• FIG. 4 shows a schematic-perspective bottom view of the optoelectronic semiconductor component according to FIG. 3 with the openings 3, the housing body 4 and the potting body 5 and the carrier 1.
• FIGS. 5a, 5b, 5c and 5d a method for producing such a semiconductor component described here is explained in more detail by means of schematic sectional representations.
• FIG. 5 a shows a section through a carrier composite 110 with a multiplicity of carriers 1.
• the carrier composite 110 is a metallic carrier frame composite.
• FIG. 5b shows the carrier composite 110 with two openings 3 introduced into each carrier 1, respectively.
• the recess 31 and the recess 32 are each in turn formed by the recess 31 and the recess 32.
• the recess 31 has a diameter Dl and the recess 32 has a diameter D2, wherein the diameter D2 is greater than the diameter Dl.
• FIG. 5 c shows how the optoelectronic semiconductor chip 2 is applied to each mounting surface 11 of each carrier 1.
• Case body 4 hardens. At the edge regions of each carrier 1, the bead-like projections 41 are formed, wherein the region in the vicinity of the semiconductor chip 2 and the openings 3 themselves are free from the housing body material.
• the semiconductor chips 2 and the openings 3 in the same Vergussvorgang be potted with a potting material.
• a lenticular radiation outcoupling surface 51 is formed in the form of a converging lens. Furthermore, the potting body 5 completely transforms the elevations 41.
• the carrier assembly 110 is singulated into individual optoelectronic semiconductor components 100 by means of sawing, cutting, breaking or punching.

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• 2009
  • 2009-03-10 DE DE102009012517A patent/DE102009012517A1/de not_active Withdrawn
  • 2009-12-23 EP EP09799360A patent/EP2406827A1/de not_active Withdrawn
  • 2009-12-23 WO PCT/EP2009/067890 patent/WO2010102685A1/de active Application Filing
  • 2009-12-23 US US13/256,213 patent/US8946756B2/en not_active Expired - Fee Related
  • 2009-12-23 JP JP2011553292A patent/JP5611246B2/ja not_active Expired - Fee Related
  • 2009-12-23 KR KR1020117023675A patent/KR101712220B1/ko not_active Expired - Fee Related
  • 2009-12-23 CN CN201410114106.4A patent/CN103928593A/zh active Pending
  • 2009-12-23 CN CN200980158010.5A patent/CN102349160B/zh not_active Expired - Fee Related
• 2010
  • 2010-02-08 TW TW099103759A patent/TWI489660B/zh not_active IP Right Cessation
  • 2010-02-08 TW TW104115198A patent/TWI580081B/zh not_active IP Right Cessation

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