EP2030245A2 - Procédé de fabrication de couches photoactives et composants comprenant une (de) telle(s) couche(s) - Google Patents
Procédé de fabrication de couches photoactives et composants comprenant une (de) telle(s) couche(s)Info
- Publication number
- EP2030245A2 EP2030245A2 EP07718505A EP07718505A EP2030245A2 EP 2030245 A2 EP2030245 A2 EP 2030245A2 EP 07718505 A EP07718505 A EP 07718505A EP 07718505 A EP07718505 A EP 07718505A EP 2030245 A2 EP2030245 A2 EP 2030245A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- layer
- semiconductive
- metal compound
- metal
- semiconducting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 18
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000000376 reactant Substances 0.000 claims abstract description 8
- 239000002243 precursor Substances 0.000 claims abstract description 7
- 238000007639 printing Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 25
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 9
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000002879 Lewis base Substances 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 150000007527 lewis bases Chemical class 0.000 claims description 6
- 229910052976 metal sulfide Inorganic materials 0.000 claims description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- -1 phosphides Chemical class 0.000 claims description 2
- 150000004763 sulfides Chemical class 0.000 claims description 2
- 150000004772 tellurides Chemical class 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 claims description 2
- 229960002447 thiram Drugs 0.000 claims description 2
- 238000004073 vulcanization Methods 0.000 claims description 2
- 150000004696 coordination complex Chemical class 0.000 claims 1
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229940065287 selenium compound Drugs 0.000 claims 1
- 150000003343 selenium compounds Chemical class 0.000 claims 1
- 150000003346 selenoethers Chemical class 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 8
- 239000007858 starting material Substances 0.000 description 7
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 7
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000002585 base Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 150000003222 pyridines Chemical class 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052950 sphalerite Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007707 calorimetry Methods 0.000 description 2
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 238000002076 thermal analysis method Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 229910021532 Calcite Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- ROCOTSMCSXTPPU-UHFFFAOYSA-N copper sulfanylideneiron Chemical class [S].[Fe].[Cu] ROCOTSMCSXTPPU-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 229920001746 electroactive polymer Polymers 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000006053 organic reaction Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004729 solvothermal method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 125000005323 thioketone group Chemical group 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the reaction temperature can be adjusted by thermal treatment but also by photons with an energy greater than 1 (a) eV.
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Compounds Of Iron (AREA)
Abstract
L'invention concerne un procédé de fabrication de couches photoactives et des composants, comme des cellules solaires, comprenant ces couches. Les couches photoactives sont fabriquées selon l'invention en appliquant sur un substrat une couche non semi-conductrice exposée à des températures inférieures à 300°C à partir d'un matériau précurseur comprenant au moins un composé métallique et un réactif salin et/ou organique par compression ou raclage, une couche photoactive semi-conductrice étant obtenue par conversion thermique du matériau précurseur à partir de la couche non semi-conductrice.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AT0105806A AT503837B1 (de) | 2006-06-22 | 2006-06-22 | Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en) |
| PCT/AT2007/000296 WO2007147184A2 (fr) | 2006-06-22 | 2007-06-18 | Procédé de fabrication de couches photoactives et composants comprenant une (de) telle(s) couche(s) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP2030245A2 true EP2030245A2 (fr) | 2009-03-04 |
Family
ID=38833780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP07718505A Withdrawn EP2030245A2 (fr) | 2006-06-22 | 2007-06-18 | Procédé de fabrication de couches photoactives et composants comprenant une (de) telle(s) couche(s) |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US20090235978A1 (fr) |
| EP (1) | EP2030245A2 (fr) |
| JP (1) | JP2009541976A (fr) |
| KR (1) | KR20090039708A (fr) |
| CN (1) | CN101479853B (fr) |
| AT (1) | AT503837B1 (fr) |
| BR (1) | BRPI0713494A2 (fr) |
| CA (1) | CA2654588A1 (fr) |
| MX (1) | MX2008016100A (fr) |
| WO (1) | WO2007147184A2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010087205A (ja) * | 2008-09-30 | 2010-04-15 | Kaneka Corp | 多接合型薄膜光電変換装置 |
| JP5137796B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 化合物半導体薄膜の製法および薄膜太陽電池の製法 |
| JP5137795B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 化合物半導体薄膜の製法および薄膜太陽電池の製法 |
| JP5213777B2 (ja) * | 2009-03-26 | 2013-06-19 | 京セラ株式会社 | 薄膜太陽電池の製法 |
| JP5464984B2 (ja) * | 2009-11-26 | 2014-04-09 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
| JP5495849B2 (ja) * | 2010-02-25 | 2014-05-21 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
| KR20130034662A (ko) * | 2010-06-29 | 2013-04-05 | 메르크 파텐트 게엠베하 | 반도체막의 제조 |
| WO2014196311A1 (fr) * | 2013-06-03 | 2014-12-11 | 東京応化工業株式会社 | Procédé pour fabriquer un complexe et une solution de ce dernier, procédé pour fabriquer une couche d'absorption de lumière pour une cellule solaire, et procédé pour fabriquer une cellule solaire |
| JP6259685B2 (ja) * | 2013-10-03 | 2018-01-10 | 積水化学工業株式会社 | 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法 |
| CN109545981A (zh) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | 一种有机太阳能电池及其制备方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE621339A (fr) * | 1961-08-30 | 1900-01-01 | ||
| US4095006A (en) * | 1976-03-26 | 1978-06-13 | Photon Power, Inc. | Cadmium sulfide film |
| GB9123684D0 (en) * | 1991-11-07 | 1992-01-02 | Bp Solar Ltd | Ohmic contacts |
| US5920798A (en) * | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
| US6023020A (en) * | 1996-10-15 | 2000-02-08 | Matsushita Electric Industrial Co., Ltd. | Solar cell and method for manufacturing the same |
| US6537845B1 (en) * | 2001-08-30 | 2003-03-25 | Mccandless Brian E. | Chemical surface deposition of ultra-thin semiconductors |
| US7468146B2 (en) * | 2002-09-12 | 2008-12-23 | Agfa-Gevaert | Metal chalcogenide composite nano-particles and layers therewith |
| US20060057766A1 (en) * | 2003-07-08 | 2006-03-16 | Quanxi Jia | Method for preparation of semiconductive films |
| US7163835B2 (en) * | 2003-09-26 | 2007-01-16 | E. I. Du Pont De Nemours And Company | Method for producing thin semiconductor films by deposition from solution |
| CH697007A5 (fr) * | 2004-05-03 | 2008-03-14 | Solaronix Sa | Procédé pour produire un composé chalcopyrite en couche mince. |
| EE05373B1 (et) * | 2004-06-07 | 2010-12-15 | Tallinna Tehnikaülikool | CuInS2 absorberkihiga pikeseelemendi valmistamise meetod |
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2006
- 2006-06-22 AT AT0105806A patent/AT503837B1/de not_active IP Right Cessation
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2007
- 2007-06-18 KR KR1020097000311A patent/KR20090039708A/ko not_active Application Discontinuation
- 2007-06-18 WO PCT/AT2007/000296 patent/WO2007147184A2/fr active Application Filing
- 2007-06-18 MX MX2008016100A patent/MX2008016100A/es active IP Right Grant
- 2007-06-18 JP JP2009515669A patent/JP2009541976A/ja active Pending
- 2007-06-18 CN CN2007800234746A patent/CN101479853B/zh not_active Expired - Fee Related
- 2007-06-18 EP EP07718505A patent/EP2030245A2/fr not_active Withdrawn
- 2007-06-18 US US12/306,136 patent/US20090235978A1/en not_active Abandoned
- 2007-06-18 BR BRPI0713494-0A patent/BRPI0713494A2/pt not_active IP Right Cessation
- 2007-06-18 CA CA002654588A patent/CA2654588A1/fr not_active Abandoned
Non-Patent Citations (1)
| Title |
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| See references of WO2007147184A2 * |
Also Published As
| Publication number | Publication date |
|---|---|
| AT503837B1 (de) | 2009-01-15 |
| KR20090039708A (ko) | 2009-04-22 |
| JP2009541976A (ja) | 2009-11-26 |
| US20090235978A1 (en) | 2009-09-24 |
| AT503837A1 (de) | 2008-01-15 |
| WO2007147184A2 (fr) | 2007-12-27 |
| CN101479853A (zh) | 2009-07-08 |
| WO2007147184A3 (fr) | 2008-04-24 |
| CN101479853B (zh) | 2013-01-02 |
| MX2008016100A (es) | 2009-01-15 |
| CA2654588A1 (fr) | 2007-12-27 |
| BRPI0713494A2 (pt) | 2012-01-24 |
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