CN101479853B - 制备光活性层的方法以及包含这样的层的器件 - Google Patents
制备光活性层的方法以及包含这样的层的器件 Download PDFInfo
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- CN101479853B CN101479853B CN2007800234746A CN200780023474A CN101479853B CN 101479853 B CN101479853 B CN 101479853B CN 2007800234746 A CN2007800234746 A CN 2007800234746A CN 200780023474 A CN200780023474 A CN 200780023474A CN 101479853 B CN101479853 B CN 101479853B
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- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 8
- 239000002879 Lewis base Substances 0.000 claims description 7
- 150000007527 lewis bases Chemical class 0.000 claims description 6
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- 238000000576 coating method Methods 0.000 claims description 5
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 2
- 239000002322 conducting polymer Substances 0.000 claims description 2
- 229920001940 conductive polymer Polymers 0.000 claims description 2
- 150000004696 coordination complex Chemical class 0.000 claims description 2
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- 150000002894 organic compounds Chemical class 0.000 claims description 2
- KUAZQDVKQLNFPE-UHFFFAOYSA-N thiram Chemical compound CN(C)C(=S)SSC(=S)N(C)C KUAZQDVKQLNFPE-UHFFFAOYSA-N 0.000 claims description 2
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- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 4
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- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
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- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 150000002471 indium Chemical class 0.000 description 1
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- 229910003437 indium oxide Inorganic materials 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
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- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 125000000714 pyrimidinyl group Chemical group 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000004771 selenides Chemical class 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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- 229910052714 tellurium Inorganic materials 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 125000000101 thioether group Chemical group 0.000 description 1
- 125000005323 thioketone group Chemical group 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000012982 x-ray structure analysis Methods 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Compounds Of Iron (AREA)
Abstract
Description
Claims (3)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AT0105806A AT503837B1 (de) | 2006-06-22 | 2006-06-22 | Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en) |
ATA1058/2006 | 2006-06-22 | ||
PCT/AT2007/000296 WO2007147184A2 (de) | 2006-06-22 | 2007-06-18 | Verfahren zum herstellen von photoaktiven schichten sowie bauelemente umfassend diese schicht(en) |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101479853A CN101479853A (zh) | 2009-07-08 |
CN101479853B true CN101479853B (zh) | 2013-01-02 |
Family
ID=38833780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800234746A Expired - Fee Related CN101479853B (zh) | 2006-06-22 | 2007-06-18 | 制备光活性层的方法以及包含这样的层的器件 |
Country Status (10)
Country | Link |
---|---|
US (1) | US20090235978A1 (zh) |
EP (1) | EP2030245A2 (zh) |
JP (1) | JP2009541976A (zh) |
KR (1) | KR20090039708A (zh) |
CN (1) | CN101479853B (zh) |
AT (1) | AT503837B1 (zh) |
BR (1) | BRPI0713494A2 (zh) |
CA (1) | CA2654588A1 (zh) |
MX (1) | MX2008016100A (zh) |
WO (1) | WO2007147184A2 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010087205A (ja) * | 2008-09-30 | 2010-04-15 | Kaneka Corp | 多接合型薄膜光電変換装置 |
JP5137796B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 化合物半導体薄膜の製法および薄膜太陽電池の製法 |
JP5137795B2 (ja) * | 2008-11-26 | 2013-02-06 | 京セラ株式会社 | 化合物半導体薄膜の製法および薄膜太陽電池の製法 |
JP5213777B2 (ja) * | 2009-03-26 | 2013-06-19 | 京セラ株式会社 | 薄膜太陽電池の製法 |
JP5464984B2 (ja) * | 2009-11-26 | 2014-04-09 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
JP5495849B2 (ja) * | 2010-02-25 | 2014-05-21 | 京セラ株式会社 | 半導体層の製造方法および光電変換装置の製造方法 |
KR20130034662A (ko) * | 2010-06-29 | 2013-04-05 | 메르크 파텐트 게엠베하 | 반도체막의 제조 |
WO2014196311A1 (ja) * | 2013-06-03 | 2014-12-11 | 東京応化工業株式会社 | 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法 |
JP6259685B2 (ja) * | 2013-10-03 | 2018-01-10 | 積水化学工業株式会社 | 半導体形成用塗布液、半導体薄膜、薄膜太陽電池及び薄膜太陽電池の製造方法 |
CN109545981A (zh) * | 2018-11-27 | 2019-03-29 | 江苏拓正茂源新能源有限公司 | 一种有机太阳能电池及其制备方法 |
Family Cites Families (11)
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BE621339A (zh) * | 1961-08-30 | 1900-01-01 | ||
US4095006A (en) * | 1976-03-26 | 1978-06-13 | Photon Power, Inc. | Cadmium sulfide film |
GB9123684D0 (en) * | 1991-11-07 | 1992-01-02 | Bp Solar Ltd | Ohmic contacts |
US5920798A (en) * | 1996-05-28 | 1999-07-06 | Matsushita Battery Industrial Co., Ltd. | Method of preparing a semiconductor layer for an optical transforming device |
DE69734183T8 (de) * | 1996-10-15 | 2007-03-29 | Matsushita Electric Industrial Co., Ltd., Kadoma | Sonnenzelle und Herstellungsverfahren |
US6537845B1 (en) * | 2001-08-30 | 2003-03-25 | Mccandless Brian E. | Chemical surface deposition of ultra-thin semiconductors |
US7468146B2 (en) * | 2002-09-12 | 2008-12-23 | Agfa-Gevaert | Metal chalcogenide composite nano-particles and layers therewith |
US20060057766A1 (en) * | 2003-07-08 | 2006-03-16 | Quanxi Jia | Method for preparation of semiconductive films |
US7163835B2 (en) * | 2003-09-26 | 2007-01-16 | E. I. Du Pont De Nemours And Company | Method for producing thin semiconductor films by deposition from solution |
CH697007A5 (fr) * | 2004-05-03 | 2008-03-14 | Solaronix Sa | Procédé pour produire un composé chalcopyrite en couche mince. |
EE05373B1 (et) * | 2004-06-07 | 2010-12-15 | Tallinna Tehnikaülikool | CuInS2 absorberkihiga pikeseelemendi valmistamise meetod |
-
2006
- 2006-06-22 AT AT0105806A patent/AT503837B1/de not_active IP Right Cessation
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2007
- 2007-06-18 KR KR1020097000311A patent/KR20090039708A/ko not_active Application Discontinuation
- 2007-06-18 MX MX2008016100A patent/MX2008016100A/es active IP Right Grant
- 2007-06-18 CN CN2007800234746A patent/CN101479853B/zh not_active Expired - Fee Related
- 2007-06-18 JP JP2009515669A patent/JP2009541976A/ja active Pending
- 2007-06-18 CA CA002654588A patent/CA2654588A1/en not_active Abandoned
- 2007-06-18 WO PCT/AT2007/000296 patent/WO2007147184A2/de active Application Filing
- 2007-06-18 EP EP07718505A patent/EP2030245A2/de not_active Withdrawn
- 2007-06-18 US US12/306,136 patent/US20090235978A1/en not_active Abandoned
- 2007-06-18 BR BRPI0713494-0A patent/BRPI0713494A2/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
BRPI0713494A2 (pt) | 2012-01-24 |
AT503837A1 (de) | 2008-01-15 |
EP2030245A2 (de) | 2009-03-04 |
JP2009541976A (ja) | 2009-11-26 |
CA2654588A1 (en) | 2007-12-27 |
US20090235978A1 (en) | 2009-09-24 |
MX2008016100A (es) | 2009-01-15 |
AT503837B1 (de) | 2009-01-15 |
KR20090039708A (ko) | 2009-04-22 |
WO2007147184A3 (de) | 2008-04-24 |
CN101479853A (zh) | 2009-07-08 |
WO2007147184A2 (de) | 2007-12-27 |
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