EP2013968A1 - Operationsverstärker - Google Patents

Operationsverstärker

Info

Publication number
EP2013968A1
EP2013968A1 EP07724519A EP07724519A EP2013968A1 EP 2013968 A1 EP2013968 A1 EP 2013968A1 EP 07724519 A EP07724519 A EP 07724519A EP 07724519 A EP07724519 A EP 07724519A EP 2013968 A1 EP2013968 A1 EP 2013968A1
Authority
EP
European Patent Office
Prior art keywords
sub
transistors
input
branch
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07724519A
Other languages
German (de)
English (en)
French (fr)
Inventor
Odile Dequiedt
Wolfram Kluge
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Germany GmbH
Original Assignee
Atmel Germany GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Germany GmbH filed Critical Atmel Germany GmbH
Publication of EP2013968A1 publication Critical patent/EP2013968A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45Differential amplifiers
    • H03F3/45071Differential amplifiers with semiconductor devices only
    • H03F3/45076Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183Long tailed pairs
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2203/00Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45Indexing scheme relating to differential amplifiers
    • H03F2203/45652Indexing scheme relating to differential amplifiers the LC comprising one or more further dif amp stages, either identical to the dif amp or not, in cascade

Definitions

  • the push-pull signal is voltage-amplified by the input differential amplifier A2 and passes through the outputs 0 D i 2 and O D22 of the input differential amplifier A2 to the gate terminals of the transistors Mp22i, M N 221, MP222 > and M N2 22 of the output stage D2.
  • the gate electrodes of the transistors Mp22i, MN22I, MP222, and MN 222 represent a capacitive impedance as additional load of the input differential amplifier A2. The smaller this capacitive load is formed, the higher a maximum amplification frequency of the input differential amplifier A2 can be achieved. However, as the capacitive load is reduced, the gate width of the transistors M P22 i, M N221> MP222, and M N222 of the output stage D2 is also reduced. This in turn reduces the current driving capability of the output stage D2.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
EP07724519A 2006-04-28 2007-04-24 Operationsverstärker Withdrawn EP2013968A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006020485.9A DE102006020485B4 (de) 2006-04-28 2006-04-28 Operationsverstärker
PCT/EP2007/003589 WO2007124895A1 (de) 2006-04-28 2007-04-24 Operationsverstärker

Publications (1)

Publication Number Publication Date
EP2013968A1 true EP2013968A1 (de) 2009-01-14

Family

ID=38226430

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07724519A Withdrawn EP2013968A1 (de) 2006-04-28 2007-04-24 Operationsverstärker

Country Status (5)

Country Link
US (1) US7535300B2 (zh)
EP (1) EP2013968A1 (zh)
CN (1) CN101432964B (zh)
DE (1) DE102006020485B4 (zh)
WO (1) WO2007124895A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2533299A (en) * 2014-12-15 2016-06-22 Nordic Semiconductor Asa Differential comparator
US9531372B1 (en) * 2015-06-05 2016-12-27 Texas Instruments Incorporated Driver with transformer feedback
US9444406B1 (en) * 2015-06-29 2016-09-13 Silicon Laboratories Inc. Amplifier topology achieving high DC gain and wide output voltage range

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9313840D0 (en) * 1993-07-05 1993-08-25 Philips Electronics Uk Ltd Cascaded amplifier
US5703532A (en) * 1995-12-13 1997-12-30 International Business Machines Corporation Fully differential self-biased signal receiver
JP3795606B2 (ja) * 1996-12-30 2006-07-12 株式会社半導体エネルギー研究所 回路およびそれを用いた液晶表示装置
US5973957A (en) * 1997-09-16 1999-10-26 Intel Corporation Sense amplifier comprising a preamplifier and a differential input latch for flash memories
JP4167747B2 (ja) * 1998-04-13 2008-10-22 株式会社ルネサステクノロジ 周波数可変発振回路及びそれを用いた位相同期回路
US6249153B1 (en) * 1999-05-25 2001-06-19 Micrel Incorporated High slew rate input differential pair with common mode input to ground
DE10016445C2 (de) 2000-03-29 2002-03-28 Infineon Technologies Ag Elektronische Ausgangsstufe
US6542019B1 (en) * 2001-11-28 2003-04-01 Berkäna Wireless, Inc. Highly linear and low noise figure mixer
US6801090B1 (en) * 2002-08-13 2004-10-05 Applied Microcircuits Corporation High performance differential amplifier
US6970043B2 (en) * 2002-10-29 2005-11-29 Fairchild Semiconductor Corporation Low voltage, low power differential receiver
US6870424B2 (en) * 2002-10-29 2005-03-22 Fairchild Semiconductor Corporation Low voltage differential in differential out receiver
KR20060004260A (ko) * 2004-07-09 2006-01-12 삼성전자주식회사 자체 바이어스 차동 증폭기
US7573331B2 (en) * 2004-10-06 2009-08-11 Agere Systems Inc. Low power low noise amplifier for a magnetoresistive sensor
KR100682056B1 (ko) * 2005-07-01 2007-02-15 삼성전자주식회사 버퍼 증폭기

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007124895A1 *

Also Published As

Publication number Publication date
DE102006020485B4 (de) 2019-07-04
WO2007124895A1 (de) 2007-11-08
CN101432964A (zh) 2009-05-13
DE102006020485A1 (de) 2007-11-15
US7535300B2 (en) 2009-05-19
CN101432964B (zh) 2012-04-18
US20080084245A1 (en) 2008-04-10

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