EP2008305A2 - Elektronisches bauelementmodul - Google Patents

Elektronisches bauelementmodul

Info

Publication number
EP2008305A2
EP2008305A2 EP07727991A EP07727991A EP2008305A2 EP 2008305 A2 EP2008305 A2 EP 2008305A2 EP 07727991 A EP07727991 A EP 07727991A EP 07727991 A EP07727991 A EP 07727991A EP 2008305 A2 EP2008305 A2 EP 2008305A2
Authority
EP
European Patent Office
Prior art keywords
component module
electronic component
circuit carrier
cooling
cooling arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07727991A
Other languages
German (de)
English (en)
French (fr)
Inventor
Richard Matz
Bernhard Siessegger
Steffen Walter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Osram GmbH
Original Assignee
Osram GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram GmbH filed Critical Osram GmbH
Publication of EP2008305A2 publication Critical patent/EP2008305A2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48135Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48235Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191Disposition
    • H01L2924/19101Disposition of discrete passive components
    • H01L2924/19107Disposition of discrete passive components off-chip wires

Definitions

  • the present invention relates to an electronic component module with at least one multi-layer scarf ⁇ carrier carrier assembly.
  • Another thermal coupling can be achieved in that the power components are mounted directly on a metal ⁇ metallic carrier in an opening of a circuit carrier.
  • Such embodiments are known from US 2003/0062185 Al and US 2004/0222433 Al.
  • connection between ceramic circuit substrate and metallic heat sink can be z. B. by an adhesive bond, a solder joint or during sintering of the ceramic (Cofiring) are produced.
  • these solutions are for two-dimensional arrangements of components, for. B. LEDs, thought, and the heat generated is dissipated almost exclusively only perpendicular to the metal support level down.
  • thermoly robust circuit carriers can also be provided that the LTCC technology Hérange ⁇ attracted is that virtually an unlimited number of layers and thermal vias and punched windows allowed light ⁇ . Moreover, it is possible that several kera ⁇ mix circuit carriers in mechanical and electrical composite by so-called ball grid array to a three- dimensional module stacked on top of each other. However, with these modules cooling of the components is not readily feasible.
  • the present invention is therefore an object of the invention to provide an electronic component module, which can be made compact and allows an improved te heat removal ⁇ .
  • An inventive electronic component module comprises at least a first multilayer circuit carrier assembly and a cooling arrangement, wherein the cooling ⁇ arrangement contacted with an upper side of the circuit carrier assembly, in particular astrainingflä- chig, and is designed such that in Be ⁇ operation of the electronic Component module generated Abicar ⁇ me in the lateral direction with respect to the arrangement and orientation of the circuit board assembly through the Küh ⁇ lungsan ever can be discharged.
  • This configuration enables the light on the one hand a compact device module having a multilayered circuit carrier assembly, in which the it is discharged waste heat ⁇ witnessed by an improved conception.
  • the cooling arrangement carrier assembly extends into la ⁇ teraler direction at least on one side of the circuit ⁇ on the dimensions of the circuit carrier assembly out.
  • the cooling arrangement is at least partially formed plate-shaped. As a result, a relatively large-area contact with the electronic circuit carrier assembly can be achieved.
  • the cooling arrangement at least be rich ⁇ is embodied as a side wall of a housing of the electronic component module ⁇ rule.
  • at least one multilayered circuit carrier assembly at least one insulation ⁇ layer having a device layer and a conductor tracks ⁇ layer.
  • the said layers may vary both in their arrangement with respect to each other and in number. It may be provided that connects reduction layer in a layer sequence on the insulation layer, the Bautei ⁇ and Lei ⁇ terbahnentik connects to the device layer. It can also be provided that the conductor track layer represents the uppermost layer, to which then the component layer and then connect the insulation layer.
  • a further insulation layer is formed between the component layer and the conductor track layer.
  • the layer or the gegebe ⁇ applicable, further existing insulation layer drawand ⁇ th side of the wiring layer may preferably be arranged a cooling arrangement.
  • a further cooling arrangement can also be connected to the insulation layer, whereby a cooling arrangement for lateral heat dissipation is arranged on both sides-top and bottom-of the circuit carrier assembly.
  • Preferably assembly and a second circuit carrier assembly is an intermediate layer between the first circuit carrier, in particular an insulating interim layer ⁇ rule, constructed and arranged intermediate ⁇ upper sides of the circuit carrier assemblies facing away from each layer, a cooling structure to which this.
  • the interconnect layer preferably adjoins the intermediate layer and the cooling arrangement advantageously adjoins the insulation layer.
  • a circuit carrier assembly may be arranged on opposite sides of the intermediate layer, which may be the same or different in terms of layer arrangement and number of layers.
  • the cooling arrangements are preferably connected to one another at their edge regions laterally of the circuit carrier assemblies, in particular by thermally conductive spacer elements.
  • This connection may preferably be formed by vertically oriented spacer elements, which are in particular formed thermally conductive. It is thus possible to realize an electronic component module which has in each case a multilayer circuit carrier on opposite sides of the intermediate layer, wherein the circuit carrier assemblies are connected at their exposed upper sides, in particular substantially the horizontal upper sides, at least in regions, each with a cooling arrangement.
  • the cooling arrangements lie directly on this upper side.
  • Such a sandwich arrangement which lung location in the stack a cooling arrangement, in particular a kuh ⁇ , subsequently, in turn, and finally in turn comprises a subsequent first multilayer circuit carrier assembly, thereafter ⁇ rule layer a Zvi a second multilayer circuit carrier assembly comprises a cooling arrangement allows a very compact implementation of the component module, which ensures better heat dissipation.
  • a sandwich structure can be stacked as often as desired.
  • any other stacking order of cooling arrangements, circuit carrier assemblies, and intermediate layers are also possible.
  • the arrangement of the cooling layers on the free upper sides of the circuit carrier assembly and in particular the rea ⁇ lization, in which the horizontal cooling arrangements are connected in the vertical direction by spacer elements, allows the realization to the effect that the cooling arrangements simultaneously represent the housing of the electronic component module.
  • the intermediate layer in particular a PCB substrate or a DCB (Direct Copper Bonded Aluminum Nitride Substrate) substrate, is also heat-dissipating.
  • the intermediate layer has a ⁇ me-metallic core, in particular an aluminum or copper core.
  • the illustrated invention proves to be particularly advantageous when there is a connection with the molded-lead-frame technique.
  • individual or all elements comprising the cooling arrangements, the circuit carrier assemblies and the intermediate layers may be implemented in molded-lead-frame technology.
  • all layers of the circuit carrier assemblies may be at least partially trained lent curved, whereby both the Isola ⁇ tion layer, as well as the component layer and as well as the conductor track layer may be spatially curved.
  • This allows any components to be cooled over substantially all of their exposed surfaces.
  • relatively thick conductor strip NEN or metal thermoformed parts, such as aluminum ⁇ or copper thermoformed parts, at least partially with plastic can be encapsulated and these Ausgestal ⁇ lines and generalizations ultimately only on the sum of current and heat load and the insulation ⁇ strength in the electronic component module dependent. It can thereby be an integration of power and cooling enabled.
  • the outer sides of the circuit carrier assemblies form the housing including any cooling fins and have an inlay mold for insulation, wherein nevertheless a thermal coupling of the next layer can be achieved.
  • a sandwich configuration it is also possible, in contrast to a potting embodiment, that no gluing of the circuit carrier assembly with the intermediate layer is provided.
  • a section may preferably be provided which is at the same time designed as a plug or socket for electrical contacting of the cooling arrangement.
  • At least one of the cooling arrangements and / or at least one of the intermediate layers and / or at least one of the circuit carrier assemblies may be formed in molded lead frame technology.
  • the cooling arrangement is at least partially formed of metal and advantageously formed as a metallic plate.
  • the cooling arrangement is preferably arranged at least region ⁇ , as an intermediate layer between the first circuit carrier assembly and a second multi-layer of circuitry carrier assembly.
  • It can be arranged at least a third circuit carrier assembly, which is contacted with a furtherdeungsanord ⁇ tion, wherein the contacted with the first and the second circuit carrier assemblies cooling arrangement is connected to the further cooling arrangement by at least one spacer element.
  • At least one ball-grid array and / or at least one spring contact and / or at least one plug-in pin are formed as electrical contact between the third circuit carrier assembly and the first or the second circuit carrier assembly.
  • the electrical contacting of the circuit carrier assemblies which are not arranged on opposite sides of a common intermediate layer or cooling arrangement, can thereby take place in many different ways. Depending on the manufacturing technology, the best possible electrical contact can be realized.
  • At least one circuit carrier assembly preferably has a plurality of LTCC layers, which preferably have integrated components.
  • a plug-in connection for external electrical contacting of the electronic component module is introduced into the cooling arrangement.
  • This is be ⁇ Sonders advantageous when at least one regulatorydeungsan ⁇ a housing wall of the electronic Bauelementmo ⁇ duls represents.
  • This housing wall can represent a main heat ⁇ sink.
  • the spacer elements are preferably formed electrically insulating and the ver by such a spacer-bound ⁇ cooling arrangements are preferred can be laid on different electrical potentials. It can be seen easily ⁇ that an electrical contacting of the e- lektronischen component module is carried out via the at least two lie at different electrical potentials cooling arrangements to the outside, or formed.
  • cooling ribs are formed at least at the edge regions of the cooling arrangements.
  • the cooling arrangements preferably extend in the lateral direction and thus laterally beyond the position of the spacer elements to the circuit carrier assemblies. This means that the vertically oriented Distance elements are indented from the edge regions of thedeungsanord ⁇ calculations in the direction of the circuit carrier assemblies, so that form free ends of the cooling arrangements in the horizontal direction. At these edge regions of the cooling arrangements may preferably be formed cooling fins. The removal of the generated heat from ⁇ can be further improved.
  • FIG. 1 shows a sectional representation of a first exemplary embodiment of the present invention an electrophotographic ⁇ African component module
  • Figure 2 is a sectional view through a second exemplary implementation of an inventive from ⁇ elekt ⁇ tronic component module;
  • FIG. 3 shows a sectional view of a third exporting ⁇ approximately embodiment of an inventive electrophotographic ⁇ African component module
  • Figure 4 is a sectional view of a fourth embodiment of an electronic exporting ⁇ approximately Bauelement- module
  • Figure 5 is a sectional view of a fifth embodiment of an electro ⁇ invention African component module
  • Figure 6 is a sectional view of a sixth exemplary embodiment of the present invention an electrophotographic ⁇ African component module
  • FIG. 7 shows a sectional view of a seventh embodiment of an electronic component ⁇ module
  • FIG. 8 shows a sectional view of an eighth embodiment of an electronic component ⁇ module.
  • FIG. 9 shows a sectional view of a ninth embodiment of an electronic component module.
  • FIG. 1 shows a sectional view of a first exemplary embodiment of a component module system 1, which comprises three electronic component modules 2, 3 and 4.
  • the first electronic component module 2 comprises a first multilayer circuit carrier assembly 21 and a second multilayer circuit carrier assembly 22.
  • an intermediate layer or an intermediate layer 23 arranged, which is formed in the embodiment as a metallic plate.
  • This intermediate layer 23 is designed to cool the electronic component module 2 and is referred to below as cooling arrangement 23 or cooling layer.
  • This cooling arrangement 23 is formed together with so ⁇ with upper surfaces of the circuit carrier assemblies 21 and 22 over a planar region immediately adjacent.
  • can sondere in the lateral direction (x direction)
  • a relatively large contact area between the cooling assembly 23 and the circuit carrier assemblies 21 and 22 are formed can be achieved thereby providing improved heat dissipation.
  • this areal contact area extends over the entire surface area in the xz plane (perpendicular to the plane of the figure).
  • the first multilayer scarf ⁇ tung carrier assembly 21 three vertically superimposed ⁇ arranged LTCC layers 21a to 21c.
  • the LTCC layers 21a to 21c unspecified components and printed conductors are formed.
  • an integrated circuit 21d disposed on the layer 21c is an integrated circuit 21d which is positioned in a recess 21e formed in both the layer 21a and the layer 21b.
  • the second multilayer circuit carrier assembly 22 arranged on the opposite side of the cooling arrangement 23 also comprises, in the exemplary embodiment shown, three LTCC layers 22a to 22c, which are likewise designed as LTCC glass ceramics.
  • an integrated circuit 22d is disposed on the layer 22c, which is positioned in a recess 22e in the layers 22a and 22b.
  • the cooling arrangement 23 extends in the x direction and thus in the lateral or horizontal direction of the entire component module system 1 beyond the dimensions of the two circuit carrier assemblies 21 and 22.
  • the cooling arrangement 23 For electrically contacting the two circuit carrier assemblies 21 and 22 are formed in the cooling arrangement 23 e lectric contacting vias 23a, 23b, 23c and 23d from ⁇ .
  • these vias 23a to 23d provided for electrical contacting are electrically insulated from the cooling arrangement 23.
  • the cooling arrangement 23 also extends beyond the dimensions of the two circuit carrier assemblies 21 and 22 in a plane which runs perpendicular to the plane of the figure (xz-plane).
  • the cooling arrangement only extends to the right or left in the illustrated sectional view in the lateral direction (x direction) beyond the configuration of the circuit carrier assemblies 21 and 22.
  • the cooling assembly 23 a waste heat generated during operation of the electronic component module 2 can Lich since ⁇ (x-direction) are directed outwardly insbesonde- re side of the circuit carrier assemblies 21 and are removed in the lateral direction 22nd In a three-dimensional representation, such a lateral heat removal would then be possible in an xz plane, since the cooling arrangement 23 also preferably extends in the z direction (perpendicular to the plane of the figure).
  • the component module system 1 has a second electronic component module 3 arranged below the first electronic component module 2, which module is designed analogously to the first electronic component module 2. Also this Bauelementmo ⁇ dul 3 has two multilayer circuit carrier assemblies
  • LTCC layers 31a, 31b, 31c and 32a, 32b and 32c which are formed as LTCC glass ceramic layers.
  • a cooling arrangement 33 is arranged as a carrier, wherein the circuit carrier assemblies 31 and
  • An integrated circuit 31d or 32d is respectively arranged in LTCC layers 31c and 32c.
  • recesses 31e and 32e are respectively formed in the layers arranged above them.
  • electrical contacts in the form of vertical vias 33a, 33b, 33c and 33d are formed in the cooling arrangement 33. These vias 33a to 33d are also electrically isolated from the metallic cooling arrangement
  • a third electronic component module 4 of the component module system 1 is formed.
  • the third electronic component module 4 is arranged in the y-direction under the second electronic component module 3, so that a three-dimensional stack shape is formed in a compact cube-like shape by the component module system 1, which has a Entskyrmungswin a metal-ceramic composite.
  • the third electronic component module 4 comprises a central metallic, plate-shapeddeungsanord ⁇ tion 43, wherein on opposite sides of this cooling arrangement 43 multi-layer circuit carrier assemblies 41 and 42 are formed.
  • the circuit carrier assemblies 41 and 42 each have three LTCC glass-ceramic layers 41a, 41b, 41c and 42a, 42b, 42c.
  • Integrated circuits 4 Id and 42d are disposed on the LTCC layers 41c and 42c, respectively.
  • recesses 41e and 42e are again formed in the overlying layers 41a, 41b and 42a, 42b.
  • 41 and 42 electronic Kunststoffie ⁇ ments in the form of vias 43a, 43b, 43c and 43d in the cooling arrangement 43 are formed for electrical contacting of the two circuit carrier assemblies, which are electrically insulated.
  • the two cooling arrangements 33 and 43 are designed in their dimensions corresponding to the cooling arrangement 23.
  • each spacer element 51 and 52 has a core region 51a or 52a, which is surrounded by a jacket element 51b or 52b.
  • the core region 51a, 52a may be formed as a bore.
  • a screw can be provided, wherein in the holes and in the edge preparation ⁇ surfaces of the cooling arrangements 23, 33 and 43 also formed and illustrated holes a screw can be used.
  • connection is formed for example by a riveted joint. Rivet elements or bolts would then be inserted into the core regions 51a and 52a.
  • the spacer elements 51 and 52 are formed thermally conductive and arranged for the lateral discharge of the waste heat generated in the component module system 1. As can be seen from the illustration in Figure 1, the spacer elements 51 and 52 are such as defined x direction positio ⁇ that it is substantially flush with the lateral edges of the cooling layers 23, 33 are arranged and 43rd
  • the second electronic component module 3 is also electrically contacted with the third electronic component module 4 via BaIl grid arrays 63 and 64 which are formed on upper sides 32f and 41f of the corresponding layers 32a and 41a.
  • electrical contacts in the form of ball-grid arrays 65 and 66 are provided on an outer side or upper side 42f of the layer 42a, in order to allow if to allow a contact with another electronic component module or even another component module system.
  • the ceramic LTCC layers of the respective circuit carrier assemblies 21, 22, 31, 32, 41 and 42 may vary in number and arrangement from the embodiment shown in Figure 1 in many ways and be arranged and designed completely different. Is Wesent ⁇ Lich that the cooling arrangements 23, 33 and 43 are positioned and formed such that a lateral cooling concept can be realized.
  • the ceramic LTCC layers 21a to 21c, 22a to 22c, 31a to 31c, 32a to 32c, 41a to 41c and 43a to 43c are realized as carriers of an electrical circuit, wherein this electrical circuit can be produced, for example, by screen-printed interconnects.
  • the attachment the circuit carrier assemblies 21, 22, 31, 32, 41, 42 to the respective cooling assemblies 23, 33 and 43 may be given for example by an adhesive bond or a solder joint ⁇ or by a sintering process.
  • the metallic material of the cooling arrangements 23, 33, 43 is selected or manufactured as an alloy or composite material such that it is thermally adapted for the required temperature window to the ceramic of said layers and has the highest possible thermal conductivity.
  • the electronic component module system 1 shown in FIG. 1 is arranged in a housing (not shown).
  • a heat-conductive contact Zvi ⁇ can rule the housing and at least one cooling arrangement 23, 33, 43 and / or at least one of the spacer elements 51 may be formed 52nd
  • the construction ⁇ element module system 1 may be screwed to the housing. It is also possible for a plurality of contacts for heat dissipation to be formed between the component module system 1 and the housing.
  • ball grid arrays 61 to 66 realized in the exemplary embodiment according to FIG. 1, it is also possible to provide electrical contacting by means of spring contacts or plug-in pin headers, as can be realized in so-called dual-in-line (DIL) housings to absorb any thermal mismatch.
  • DIL dual-in-line
  • a required for spring contacts or pin headers greater vertical distance (y-direction) between the individual levels also serves the better electrical insulation in the event that exist between adjacent levels large electrical potential differences.
  • bonding wires can be provided.
  • an electrical voltage distance between scarf ⁇ tung carrier assemblies can be further increased, so it can be provided that at least one insulating film in ⁇ play, of Kapton, is arranged in the resulting intermediate region.
  • This embodiment of the component module system 1 corresponds to the embodiment according to FIG. 1 and therefore, for the sake of clarity, only shows reference symbols for higher-level elements, the detailed design of which is already specified in the explanation of FIG.
  • an insulating film 7, wel ⁇ surface is net angeord- between the second electronic component module 3 and the third electronic component module.
  • this insulating film 7 which is formed in the embodiment as Kapton film is arranged.
  • this insu- lating sheet 7 is spaced apart from the LTCC layer 32a of the scarf ⁇ tung carrier assembly and spaced apart from the LTCC layer 41a of the circuit carrier assembly 41 positio ned ⁇ 32nd
  • the Ausspa ⁇ are stanchions 71 and 72 are dimensioned such that the ball- grid arrays 63 and 64 spaced apart from the insulating Fo lie 7 are arranged. In the horizontal direction (x direction), the insulating film 7 extends beyond the dimensions of the circuit carrier assemblies 32 and 41.
  • the insulating film 7 has dimensions which are selected such that the insulating film 7 extends only between the ball grid arrays 63 and 64 in the horizontal direction. In such an embodiment, this insulating film 7 is inserted into the space between the circuit carrier assemblies 32 and 41. It can be loose in this space. Through this i-solating film 7, the air gap between the Circuit carrier assemblies 32 and 41 are extended so that flashovers of an LTCC layer of the scarf ⁇ tion carrier assembly 32 can be prevented on an LTCC layer of the scarf ⁇ tion carrier assembly 41.
  • Such an insulating film 7 may be arranged in addition to or instead of ⁇ also between the circuit carrier assemblies 22 and 31. The insulating film 7 may also be attached to one of the circuit carrier assemblies 32 or 41, for example, be glued. It can also be provided that the insulating film 7 is fixed to the Dis ⁇ dance elements 52.
  • FIG. 3 shows a sectional view of a further exemplary embodiment of a component module system 1 with a plurality of electronic component modules 2, 3 and 4 '.
  • the electronic component module 4 'gene with only a single Molagi ⁇ circuit carrier assembly 41' is formed.
  • This circuit carrier assembly 41 ' is arranged on adeungsan- order 8, which is designed as a lowermost Enticarmungslage.
  • This cooling arrangement 8 is provided as a main ⁇ heat sink of the entire component module system Siert 1 reali ⁇ and in both the horizontal and vertical directions with larger dimensions in size than the cooling arrangement 23 and 33.
  • the cooling arrangement 8 can be used as the housing wall of a housing of the entire component module system 1.
  • a continuous recess 81 is formed in this cooling arrangement 8, in which a plug connection device 9 is mounted.
  • the plug connection device 9 has a plug-in element 9a which is fixedly arranged in the recess 81 and which is externally accessible and into which a plug-in element 9b can be inserted. An external electrical contact can be made possible.
  • Electrical contacts 91, 92 and 93 are attached, in particular soldered, to the plug-in element 9a integrated in the cooling arrangement 8, which are electrically connected to the LTCC layer 41a 'of the circuit carrier assembly 41'. It can also be provided that recesses are formed in the cooling arrangements 23 and 33, through which a larger plug-in element 9a can then extend and electrical contacting to the corresponding circuit carrier assemblies of the electronic component modules 2 and 3 is possible.
  • the individual layers and the individual electronic component modules 2 to 4 or 2 to 4 ' can be formed with different union under ⁇ features and functionalities.
  • voltages that slightest ⁇ processing electronic components with their relatively high particle and flow of control functions (controller) and digital elements are spatially separated, whereby unwanted desired or destructive interactions can be prevented.
  • this is realized in the embodiment according to FIG.
  • FIG. 1 A further embodiment of an electronic component module system 1 is shown in a sectional view according to FIG.
  • the spacer elements are here electrically insulating 51 and 52 may be, thereby allowing the cooling assemblies 23 may be at different electrical potentials chen 'and 33'.
  • the jacket elements 51b and 52b are formed of an electrically insulating material.
  • the connections in the core regions 51a and 52a are formed from an electrically insulating material or at least electrically insulated, if elekt ⁇ risch conductive parts are provided as connecting elements.
  • they can additionally serve as a current-carrying connection to a consumer, which is connected via, for example, welded or hard-soldered cables 10a and 10b.
  • the electrical connection can also be done by plug connections.
  • a cooling arrangement can be designed such that it assumes the function of a socket or a plug.
  • the spacer elements 51 and 52 extend in the x-direction in the direction of the circuit carrier assemblies the electronic component modules 2, 3 and 4 'are 29o ⁇ ben.
  • the cooling layers 23 ', 33' and 8 'therefore have free edge regions, since the spacer elements 51 and 52 in the lateral direction are no longer flush with the edges of the cooling arrangements 23', 33 'and 8' are arranged.
  • FIG. 5 shows a further embodiment of a component module system 1 is shown with a plurality of electro ⁇ African component modules 2, 3 and 4 'in a sectional view.
  • the horizontally oriented cooling plates or cooling arrangements 23 ", 33"'and 8 "in the horizontal direction (x direction) project further beyond the position of the spacer elements 51 and 52
  • cooling vanes 23f and 23h may additionally be formed on the extended edge regions 23e and 23g of the cooling arrangement 23 ".
  • cooling vanes 33f and 33h are formed at the extended edge regions 33e and 33g of the cooling arrangement 33 ". Accordingly, this is realized in the cooling arrangement 8 ", in which cooling vanes 82a and 83a are formed on horizontally extended edge regions 82 and 83.
  • the cooling vanes 23f, 23h, 33f, 33h, 82a and 83a in the vertical direction (y-direction) are oriented upwards.
  • this cooling NEN can also be oriented vertically downwards or in another direction.
  • the cooling arrangements 23 ''',33''' are cup-shaped, and may be, for example, as a cast part linstrument rea ⁇ .
  • the spacer elements are thus integrated into the respective cooling layers 23 '''and33''' in this embodiment. This can be formed when stacking a protected against dust and spray multi-layer housing.
  • sealing rings 12a and 12b are arranged. These sealing rings 12a and 12b may be made of aluminum, copper, viton, plastic or the like, for example.
  • cooling fins 23f and 23h may also extend over the entire upper surface of the cooling arrangement 23 '''. It may also, for example, a screw for mounting the component modules provided ⁇ be seen, where here too in the bores (core portions 51, 52a for example. In Figure 1) threaded members screw-bar are, corresponding threads in thedeungsan ⁇ order 8 '' can be trained. By dissipating the heat loss from each Einzelebe ⁇ ne in the lateral direction stackability and compact design can be achieved.
  • Spacers can be used with the horizontal metal girders
  • cooling layers so that each level can be tested individually before assembling the module.
  • spacer elements and levels can be flowed through by a circulating coolant in order to homogenize or actively lower the temperature.
  • the coolant can, for example, according to the principle of "heat pipes” to increase the heat capacity to undergo a phase transition.
  • FIG. 7 a further embodiment of a component module system 1 with an electronic component module 2 '' is shown.
  • the component module 2 '' has a first multilayer scarf ⁇ tung carrier assembly 21 'and a second multilayer circuit carrier assembly 22''.
  • an insulating intermediate layer 24 is located between the first circuit carrier module 21 'and the second circuit carrier module 22''.
  • the first multilayer circuit carrier assemblies 21 ' comprise two insulation layers 21a' and 21c ', a component layer 21b' embedded therein, and a conductor track layer 21d '.
  • the insulating layers 21a 'and 21c', as well as the intermediate layer 24 include vias, not shown, so-called vias, for electrical contacting of the layers arranged on both sides. These vias also allow, for example, ei ⁇ ne electrical contacting of the cooling arrangement 25 to allow an external contact, as well as the power supply via the cooling arrangement 25, if this is not taken over by the conductor layer 21d ' ⁇ who can or should not be adopted.
  • the second circuit carrier assembly 22'' Analogous to the first circuit carrier assembly 21 ', the second circuit carrier assembly 22''is formed. It also has two insulation layers 22b '' and 22d '', between which a component layer 22c '' is formed. Between the insulation layer 22b 'and the interim ⁇ rule layer 24 is a wiring layer 22a''forms out ⁇ , which in addition to the insulating layers 22b' and 22d '', and the device layer 22c '' of the second of circuitry carrier assembly 22 '' assigned. Adjacent to the lower insulating layer 22d '' is further Küh ⁇ lung arranged arrangement 26th
  • the component layers 21b 'and 22c''then consist of SMD components or wired components.
  • the insulating layers 21c 'and 22b''facing the interconnect layers 2 Id' and 22a '' are realized by the solder resist applied to the interconnect layers 2 Id 'and 22a ".
  • the intermediate layer 24 is formed by the printed circuit board beispielswei ⁇ se of FR4 or FR5 material.
  • the printed circuit board can also be designed as a flexible printed circuit board, which is also referred to as Flexbo- ard.
  • the intermediate layer 24 and / or one or more of the insulation layers 21a ', 21c', 22b '' and 22d '' can be mechanically load-bearing or contribute to the mechanical strength of the component module system 1 ,
  • the cooling arrangements 25 and 26 are preferably connected to one another at their edge regions laterally of the circuit carrier assemblies 21 'and 22 ", in particular by thermally conductive spacer elements.
  • This connection can preferably be formed by vertical orien ⁇ oriented spacer elements, not shown, which are formed insbeson ⁇ particular thermally conductive.
  • an electronic management module 2 can Bauele ⁇ '' realized, which respectively at opposite sides of the intermediate layer 24 is a multilayered circuit carrier assembly 21 'comprises and 22'', where the circuit carrier assemblies 21 'and 22''at their exposed upper sides, in particular substantially the horizontal upper sides, at least partially connected to a cooling arrangement 25 and 26, respectively.
  • the cooling arrangements 25 and 26 lie directly on these topsides.
  • FIG. 8 a further embodiment of a component module system 1 is shown.
  • This corresponds to the embodiment shown in FIG. 7, but has a spacer element 51 ', which is vertically oriented and at the same time serves as a heat sink and thus enables the cooling of the two cooling arrangements 25 and 26.
  • a cooling arrangement 25 ' includes a channel 25a' for a cooling medium.
  • an intermediate layer 24 is formed, the electrical insulators ⁇ tion to the underlying wiring layer 21d 'werkstelligt be ⁇ .
  • an insulating layer 21a' and 21c ' are the stressesungsträ ⁇ ger assembly 2 assigned '''.
  • Partial layer 21b ' by two cooling arrangements arranged on both sides ⁇ 25' and 26 '.
  • the cooling arrangements can also be differently dimensioned in the horizontal direction and have a different shape.
  • one or more recesses may be provided in the cooling arrangements.
  • an ignition transformer is arranged in the Bauelementmodul- system 1, so that the Bauelementmodul- system 1, for example for a Gasentladungslampenbe ⁇ drive.
  • Electronic ballasts or lamp operating devices can also be arranged in the system. It may be, however, provided that such component module systems 1 are formed biltechnik Brock for Automo ⁇ and are for example designed for motor control.
  • exemplary integrated circuits are formed on the LTCC layers.
  • other components such as power transistors, resistors or light-emitting diodes.
  • the arrangement of these integrated circuits on the LTCC layers adjacent to the cooling arrangement has the advantage that no plated-throughs are required by the overlying LTCC layers. Furthermore, it can be achieved by this configuration that a better heat dissipation to the cooling arrangements can be made possible.
EP07727991A 2006-04-19 2007-04-11 Elektronisches bauelementmodul Withdrawn EP2008305A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102006018161A DE102006018161A1 (de) 2006-04-19 2006-04-19 Elektronisches Bauelementmodul
PCT/EP2007/053523 WO2007118831A2 (de) 2006-04-19 2007-04-11 Elektronisches bauelementmodul

Publications (1)

Publication Number Publication Date
EP2008305A2 true EP2008305A2 (de) 2008-12-31

Family

ID=38536633

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07727991A Withdrawn EP2008305A2 (de) 2006-04-19 2007-04-11 Elektronisches bauelementmodul

Country Status (9)

Country Link
US (1) US8164904B2 (ja)
EP (1) EP2008305A2 (ja)
JP (1) JP4940295B2 (ja)
KR (1) KR101478518B1 (ja)
CN (1) CN101427371B (ja)
CA (1) CA2650547A1 (ja)
DE (1) DE102006018161A1 (ja)
TW (1) TW200810677A (ja)
WO (1) WO2007118831A2 (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2951019B1 (fr) * 2009-10-07 2012-06-08 Valeo Etudes Electroniques Module de puissance pour vehicule automobile
JP5757573B2 (ja) * 2009-10-08 2015-07-29 日本電気株式会社 半導体装置
JP5709218B2 (ja) * 2009-11-27 2015-04-30 日本電気株式会社 半導体装置、3次元実装型半導体装置、半導体モジュール、電子機器、及びその製造方法
JP5740903B2 (ja) * 2010-10-19 2015-07-01 富士通株式会社 電子装置、半導体装置、サーマルインターポーザ及びその製造方法
WO2013084589A1 (ja) * 2011-12-08 2013-06-13 富士電機株式会社 半導体装置および半導体装置製造方法
AT515100B1 (de) * 2013-12-20 2015-06-15 F & S Vermögensverwaltungs Gmbh Trägermodul mit Überbrückungselement für ein Halbleiterelement
JP2018098927A (ja) * 2016-12-14 2018-06-21 株式会社オートネットワーク技術研究所 電気接続箱
US10978896B2 (en) 2017-06-23 2021-04-13 Dell Products L.P. High efficiency power storage adapter
US10389154B2 (en) 2017-06-23 2019-08-20 Dell Products L.P. Power storage adapter using a high efficiency charging method
US10928880B2 (en) 2017-06-23 2021-02-23 Dell Products L.P. Power storage adapter for communicating battery data with a portable information handling system
US10452102B2 (en) 2017-06-23 2019-10-22 Dell Products L.P. Power delivery contract establishment in a power storage adapter
US10381844B2 (en) 2017-06-23 2019-08-13 Dell Products L.P. Sourcing power from a battery or AC-DC converter of a power storage adapter
US10476288B2 (en) 2017-06-23 2019-11-12 Dell Products L.P. Power storage adapter for peak shift operation with a portable information handling system
US10608443B2 (en) 2017-08-15 2020-03-31 Dell Products L.P. Battery management using battery temperature distribution
US10642333B2 (en) 2017-08-24 2020-05-05 Dell Products L.P. Power storage adapter for efficient supply of power of multiple portable information handling systems
US10620679B2 (en) 2017-09-01 2020-04-14 Dell Products L.P. Prioritizing supplying electrical power by a power storage adapter to connected devices
US10673271B2 (en) 2017-09-01 2020-06-02 Dell Products L.P. Efficient charging of multiple portable information handling systems based on learned charging characteristics
US10404105B2 (en) 2017-09-14 2019-09-03 Dell Products L.P. Power storage adapter for wireless power transmission
US10714797B2 (en) 2017-09-18 2020-07-14 Dell Products L.P. Multilayer thermal laminate with aerogel for battery cell enclosures
US11513928B2 (en) 2017-09-18 2022-11-29 Dell Products L.P. Power storage adapter with power cable validation
US10488906B2 (en) 2017-09-26 2019-11-26 Dell Products L.P. Power delivery based on temperature and other factors in a power storage adapter
US10278279B1 (en) * 2017-10-30 2019-04-30 Dell Products L.P. Transformer thermal radiator for power field effect transistors
JP6693986B2 (ja) * 2018-03-12 2020-05-13 ファナック株式会社 モータ駆動装置
US11307368B2 (en) 2020-04-07 2022-04-19 Cisco Technology, Inc. Integration of power and optics through cold plates for delivery to electronic and photonic integrated circuits
EP3930115A1 (en) * 2020-06-23 2021-12-29 Eltek AS Outdoor power supply system including a passive cooling system
CN114914234A (zh) * 2021-02-10 2022-08-16 华为技术有限公司 一种功率结构体和制备方法以及设备

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630172A (en) * 1983-03-09 1986-12-16 Printed Circuits International Semiconductor chip carrier package with a heat sink
JPH0752762B2 (ja) * 1985-01-07 1995-06-05 株式会社日立製作所 半導体樹脂パッケージ
WO1993013557A1 (en) * 1985-02-14 1993-07-08 Yoshiyuki Sato Structure for mounting the semiconductor chips in a three-dimensional manner
JPH04257286A (ja) * 1991-02-08 1992-09-11 Hitachi Cable Ltd 複合プリント配線基板
DE4421319A1 (de) * 1994-06-17 1995-12-21 Abb Management Ag Niederinduktives Leistungshalbleitermodul
JPH0888299A (ja) * 1994-09-19 1996-04-02 Fujitsu Ltd 半導体装置
US5542175A (en) * 1994-12-20 1996-08-06 International Business Machines Corporation Method of laminating and circuitizing substrates having openings therein
JP2641041B2 (ja) * 1995-03-01 1997-08-13 智 小野寺 集積回路の実装構造
US5557502A (en) * 1995-03-02 1996-09-17 Intel Corporation Structure of a thermally and electrically enhanced plastic ball grid array package
US5597643A (en) * 1995-03-13 1997-01-28 Hestia Technologies, Inc. Multi-tier laminate substrate with internal heat spreader
US6075287A (en) * 1997-04-03 2000-06-13 International Business Machines Corporation Integrated, multi-chip, thermally conductive packaging device and methodology
RU2133523C1 (ru) * 1997-11-03 1999-07-20 Закрытое акционерное общество "Техно-ТМ" Трехмерный электронный модуль
SE513352C2 (sv) * 1998-10-26 2000-08-28 Ericsson Telefon Ab L M Kretskort och förfarande för framställning av kretskortet
JP2000133745A (ja) * 1998-10-27 2000-05-12 Matsushita Electric Works Ltd 半導体装置
DE19859739A1 (de) * 1998-12-23 2000-07-06 Bosch Gmbh Robert Kühlvorrichtung, insbesondere zur Verwendung in einem elektronischen Steuergerät
JP3127149B2 (ja) * 1999-03-19 2001-01-22 株式会社日立製作所 半導体装置
DE19950026B4 (de) 1999-10-09 2010-11-11 Robert Bosch Gmbh Leistungshalbleitermodul
JP4142227B2 (ja) * 2000-01-28 2008-09-03 サンデン株式会社 車両用電動圧縮機のモータ駆動用インバータ装置
US6284982B1 (en) * 2000-08-18 2001-09-04 Ga-Tek Inc. Method and component for forming an embedded resistor in a multi-layer printed circuit
US6462950B1 (en) * 2000-11-29 2002-10-08 Nokia Mobile Phones Ltd. Stacked power amplifier module
US6518502B2 (en) * 2001-05-10 2003-02-11 Lamina Ceramics, In Ceramic multilayer circuit boards mounted on a patterned metal support substrate
US7095053B2 (en) * 2003-05-05 2006-08-22 Lamina Ceramics, Inc. Light emitting diodes packaged for high temperature operation
DE102004018477B4 (de) * 2004-04-16 2008-08-21 Infineon Technologies Ag Halbleitermodul
DE102004019443B3 (de) 2004-04-19 2005-08-11 Siemens Ag Leistungsmodul
US8106505B2 (en) * 2007-10-31 2012-01-31 International Business Machines Corporation Assembly including plural through wafer vias, method of cooling the assembly and method of fabricating the assembly

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2007118831A3 *

Also Published As

Publication number Publication date
CN101427371B (zh) 2011-12-14
DE102006018161A1 (de) 2007-10-25
JP4940295B2 (ja) 2012-05-30
WO2007118831A2 (de) 2007-10-25
KR101478518B1 (ko) 2015-01-06
TW200810677A (en) 2008-02-16
US8164904B2 (en) 2012-04-24
US20090097208A1 (en) 2009-04-16
JP2009534822A (ja) 2009-09-24
CA2650547A1 (en) 2007-10-25
WO2007118831A3 (de) 2008-02-21
KR20090005190A (ko) 2009-01-12
CN101427371A (zh) 2009-05-06

Similar Documents

Publication Publication Date Title
EP2008305A2 (de) Elektronisches bauelementmodul
EP1969624B1 (de) Integriertes elektronisches bauteil sowie kühlvorrichtung für ein integriertes elektronisches bauteil
DE102011083223B4 (de) Leistungshalbleitermodul mit integrierter Dickschichtleiterplatte
EP2308274B1 (de) Leiterplatine mit elektronischem bauelement
EP2514282B1 (de) Leiterplatte mit mehreren übereinander angeordneten leiterplattenlagen mit einer bare-die-montage für den einsatz als getriebesteuerung
DE102011077206B4 (de) Leiterplatte und Steuergerät für ein Getriebe eines Fahrzeugs mit der Leiterplatte
DE102012215788B4 (de) Mehrlagige LED-Leiterplatte
DE102008016458A1 (de) Leiterplatte
DE102014101238A1 (de) In Leiterplatten eingebettetes Leistungsmodul
WO2009043649A2 (de) Dreidimensionaler elektronischer schaltungsträgeraufbau, sowie schaltungsgrundträger aufweisend den schaltungsträgeraufbau als funktionsbauteil und dreidimensionale schaltungsanordnung bestehend aus zumindest zwei derartigen dreidimensionalen schaltungsträgeraufbauten
EP1870934A1 (de) Stromrichtermodul
DE19722357C1 (de) Steuergerät
DE102011080153A1 (de) Flexible verbindung von substraten in leistungshalbleitermodulen
DE112018006370T5 (de) Halbleitereinrichtung
DE102011078806B4 (de) Herstellungsverfahren für ein leistungselektronisches System mit einer Kühleinrichtung
DE102004058806A1 (de) Schaltungsstruktur auf einem Kühlkörper und Verfahren zur Herstellung derartiger Schaltungsstrukturen
EP3053192B1 (de) Schaltungsvorrichtung und verfahren zu deren herstellung
DE102019116021B4 (de) Flexible Leiterplatte mit thermisch leitender Verbindung zu einer Wärmesenke
DE10217214B4 (de) Kühlanordnung für eine Schaltungsanordnung
DE19648492A1 (de) Multi-Chip-Modul
EP3465781B1 (de) Thermoelektrische anordnung, insbesondere thermoelektrische sensoranordnung, sowie entsprechendes herstellungsverfahren
DE102020100742A1 (de) Leiterplatte, Lichtmodul, Beleuchtungseinrichtung und Kraftfahrzeug
DE102014203310A1 (de) Elektronikmodul
DE102013226513A1 (de) Leiterplatte, Verfahren zum Herstellen derselben und Leiterplattenvorrichtung
DE19646004A1 (de) Aufbautechnik eines elektronischen Schaltgerätes

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080912

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: OSRAM AG

DAX Request for extension of the european patent (deleted)
RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: OSRAM GMBH

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: OSRAM GMBH

17Q First examination report despatched

Effective date: 20140820

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20150303