EP1955372B1 - Nitrogen based implants for defect reduction in strained silicon - Google Patents

Nitrogen based implants for defect reduction in strained silicon Download PDF

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Publication number
EP1955372B1
EP1955372B1 EP06839704.1A EP06839704A EP1955372B1 EP 1955372 B1 EP1955372 B1 EP 1955372B1 EP 06839704 A EP06839704 A EP 06839704A EP 1955372 B1 EP1955372 B1 EP 1955372B1
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Prior art keywords
transistor
source
drain
nitrogen
substrate
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German (de)
English (en)
French (fr)
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EP1955372A2 (en
EP1955372A4 (en
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Srinivasan Chakravarthi
P R. Chidambaram
Rajesh Khamankar
Haowen Bu
Douglas T. Grider
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Texas Instruments Inc
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Texas Instruments Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7843—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being an applied insulating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Definitions

  • the disclosure herein relates generally to semiconductor technology, and more particularly to utilizing nitrogen to adapt substrate yield strength.
  • ICs integrated circuits
  • scaling down dimensions e.g., at submicron levels
  • smaller feature sizes, smaller separations between features and layers, and/or more precise feature shapes are required, such as metal interconnects or leads, for example.
  • the scaling-down of integrated circuit dimensions can facilitate faster circuit performance and/or switching speeds, and can lead to higher effective yield in IC fabrication processes by providing or 'packing' more circuits on a semiconductor die and/or more die per semiconductor wafer, for example.
  • MOS transistors are generally formed on a semiconductor substrate 12, such as silicon, for example ( FIG. 1 ). Such transistors 10 generally comprise source 14 and drain 16 regions formed within the semiconductor substrate 12, and a channel region 18 defined between the source 14 and drain 16 regions within the substrate 12.
  • a gate structure or stack 20 is formed over the channel region 18.
  • the gate structure 20 comprises a gate dielectric or a thin layer of electrically insulating material 22 and a gate electrode or layer of electrically conductive material 24 overlying the gate dielectric 22.
  • Sidewall spacers 26 reside on lateral edges of the gate structure 20 to facilitate the spacing of extension regions 28 associated with the source 14 and drain 16 regions. The sidewall spacers 26 also serve to protect the sidewalls of the gate structure 20.
  • the channel region 18 has an associated length "L", while the extent to which the transistor 10 extends transverse to the channel 18 is referred to as the transistor width "W".
  • a bias voltage is applied to the gate electrode 24 to cause a current to flow within the channel 18.
  • W/L width-to-length ratio
  • the amount of current developed for a given bias voltage is a function of the width-to-length ratio (W/L) of the transistor 10, as well as the mobility of carriers in the channel 18.
  • current can be more easily developed within the channel 18 when the carriers have a higher mobility. This allows for faster circuit operation and/or operations at lower bias voltages (to conserve power), for example.
  • the transistor width "W” and/or the channel length "L” are reduced. Reducing these dimensions can lead to various performance issues, such as slower transistor operations (e.g., reduced switching speeds, etc.).
  • Transistors of that kind are described in patent applications US2005/0116360 A1 and WO2005/094299 A2 . Accordingly, a technique would be desirable that facilitates device scaling while promoting carrier mobility.
  • the disclosure herein relates to enhancing or otherwise adapting the yield strength or elasticity of a substrate upon which a transistor is formed.
  • the yield strength of the substrate is adapted by incorporating nitrogen into the substrate, and more particularly into source/drain extension regions and/or source/drain regions of the transistor.
  • the nitrogen can be readily incorporated into the substrate during transistor fabrication by adding it as part of source/drain extension region formation and/or source/drain region formation.
  • a strain inducing layer is formed over the transistor to apply a strain thereto to alter transistor operating characteristics, and more particularly to enhance the mobility of carriers within the transistor. Enhancing carrier mobility allows the transistor to be scaled down in size while also allowing a desired current to be developed in response to an applied bias voltage.
  • the enhanced yield strength of the substrate mitigates plastic deformation of the transistor due to the strain inducing layer.
  • a method of forming a transistor includes i.a. adapting the yield strength of a semiconductor substrate, forming the transistor upon the semiconductor substrate and inducing strain within one or more portions of the transistor.
  • the disclosure herein provides for forming a layer of strain inducing material over a MOS transistor.
  • the implementation of a strain inducing layer can have adverse effects on the transistor.
  • the strain applied to the transistor by the strain inducing layer may exceed the yield strength or elasticity of the substrate upon which the transistor is formed.
  • the substrate can become plastically deformed or damaged such that the transistor operates other than as desired (e.g., as source and drain regions may be "shorted" together). Consequently, the disclosure herein also provides for incorporating nitrogen into the substrate to increase the yield strength of the substrate.
  • the transistor 200 is formed upon a semiconductor substrate 202 and includes a gate structure or gate stack 404 formed over the substrate 202.
  • a gate structure or gate stack 404 formed over the substrate 202.
  • 'substrate' as referred to herein may comprise any type of semiconductor body (e.g., silicon, SiGe, SOI) such as a semiconductor wafer or one or more die on a wafer, as well as any other type of semiconductor and/or epitaxial layers associated therewith.
  • the gate structure 204 includes a gate dielectric 206 and a gate electrode 208.
  • the gate structure 204 is formed by forming a layer of electrically non-conductive material over the substrate 202 and forming a layer of electrically conductive material over the layer of electrically non-conductive material. These layers are then patterned to form the gate dielectric 206 and gate electrode 208, respectively.
  • this patterning can be performed in any suitable manner, such as with lithographic techniques, for example, where lithography broadly refers to processes for transferring one or more patterns between various media.
  • lithography a light sensitive resist coating (not shown) is formed over one or more layers to which a pattern is to be transferred.
  • the resist coating is then patterned by exposing it to one or more types of radiation or light which (selectively) passes through an intervening lithography mask containing the pattern.
  • the light causes the exposed or unexposed portions of the resist coating to become more or less soluble, depending on the type of resist used.
  • a developer is then used to remove the more soluble areas leaving the patterned resist.
  • the patterned resist can then serve as a mask for the underlying layer or layers which can be selectively treated (e.g., etched).
  • the layer of non-conductive material out of which the gate dielectric 206 is formed generally comprises a thin layer of an oxide based material.
  • This layer can be formed by any suitable material formation process, such as thermal oxidation processing, for example, to a thickness of between about 10 Angstroms and about 50 Angstroms, for example, at a temperature of between about 600 degrees Celsius and about 1100 degrees Celsius, for example, in the presence of O 2 , for example.
  • the layer of electrically conductive material out of which the gate electrode 208 is formed generally comprises a polysilicon based material.
  • This layer can, for example, be formed to a thickness of between about 800 and about 5000 Angstroms, and may include a dopant, such as a p-type dopant (Boron) or n-type dopant (e.g., Phosphorus), depending upon the type of transistor being formed.
  • a dopant such as a p-type dopant (Boron) or n-type dopant (e.g., Phosphorus), depending upon the type of transistor being formed.
  • an implantation process 210 is performed to form a source extension region 220 and a drain extension region 222 within the substrate 202 on either side of the gate structure 204. It will be appreciated that offset spacers (not shown) may be implemented on the sides of the gate structure 204 to protect the gate structure sidewalls and to guide the implants.
  • a p-type dopant e.g., boron
  • an n-type dopant e.g., phosphorous
  • a channel region 224 is thereby defined within the substrate 202 between the extension regions 220, 222 and below the gate structure 204. It will be appreciated that a thermal process such as a rapid thermal anneal may be performed to activate the extension region dopants, causing them to diffuse laterally slightly under the gate stack 204.
  • Nitrogen may also be implanted into the substrate 202 at this juncture, either as part of the source/drain extension region implantation process 210 or as a separate process before or after the formation of the source extension 220 and drain extension 222 regions.
  • the nitrogen gas and the dopant gas(es) utilized to establish the extension regions 220, 222 may be ionized separately (in the same or different ionization chambers) and then implanted into the substrate 202 via separate ion beams.
  • the sidewall spacers 226 are then formed on lateral edges of the gate structure 204 ( FIG. 3 ).
  • the sidewall spacers 226 comprise an insulating material such as oxide and/or nitride based materials.
  • the spacers 226 are formed by depositing one or more layers of such material(s) over the device in a generally conformal manner, followed by an anisotropic etch thereof, thereby removing the spacer material from the top of the gate structure 204 and the substrate 202, while leaving a region on the lateral edges of the gate structure 204.
  • the sidewall spacers can have a thickness of between about 300 Angstroms and about 700 Angstroms, for example, and thereby offset subsequently formed source/drain regions from lateral edges of the gate structure 204.
  • Source 228 and drain 230 regions are then formed within the substrate 202 by an implantation process 232.
  • a p-type dopant e.g., boron
  • an n-type dopant e.g., phosphorous
  • a depth of between about 300 Angstroms and about 1500 Angstroms for example, to establish the source 228 and drain 230 regions.
  • nitrogen can be added to the substrate 202 at this juncture.
  • the nitrogen can be added as part of the implantation process 232 for forming the source 228 and drain 230 regions.
  • the nitrogen gas and the dopant gas(es) utilized to establish the source 228 and drain 230 regions may be ionized separately (in the same or different ionization chambers) and then implanted into the substrate 202 via separate ion beams.
  • the nitrogen is implanted such that peak range of the implant damage in the semiconductor substrate 202 from the nitrogen falls somewhere between about one quarter of the peak range of the implant damage in the semiconductor substrate 202 from the source 228 and/or drain 230 implants and about an end of range (EOR) of damage to the semiconductor substrate from the source 228 and/or drain 230 implants.
  • Arsenic is implanted at an energy of about 40keV to establish source 228 and/or drain 230 regions such that peak range of the implant damage to the lattice structure of the substrate 202 occurs at about 300 Angstroms and the lattice structure is damaged to a depth of about 600 Angstroms, or rather has an EOR of about 600 Angstroms
  • the nitrogen is implanted at an energy such that peak range of the implant damage to the lattice structure from the nitrogen falls somewhere between about one quarter of the 300 Angstroms and about 600 Angstroms, or between about 75 Angstroms and about 600 Angstroms.
  • the nitrogen is also implanted at a dose of between about one quarter the dose utilized to form the source 228 and/or drain 230 regions and about the dose utilized to form the source 228 and/or drain 230 regions. For example, if a dose of Arsenic of 2E15 atoms per square centimeter is utilized to form the source 228 and/or drain 230 regions, then the nitrogen would be implanted at a dose of between about one quarter that amount and about that amount, or between about 1E15 atoms per square centimeter and about 2E15 atoms per square centimeter.
  • the nitrogen implant can be any ionized form that can introduce nitrogen (e.g., atomic (N), molecular (N 2 ), or other cluster/molecular ions).
  • a thin layer of an oxide based material 234 is optionally deposited with a low thermal budget process (e.g., Plasma Enhanced Chemical Vapor Deposition (PECVD)) ( FIG. 4 ).
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • the oxide layer 234 may, for example, be deposited to a thickness of between about 20 Angstroms and about 150 Angstroms.
  • the oxide layer generally serves as an etch stop for the subsequent patterning of a nitride based capping layer.
  • the strain inducing layer may be formed to a thickness of between about 100 Angstroms and about 1000 Angstroms, for example, and may comprise any suitable strain inducing material, such as oxide, nitride, oxynitride, SiC, SiC0, SiCN ,SiOCN, for example. It will be appreciated that the thickness and/or composition of the strain inducing layer may be regulated to control the amount of strain induced by strain inducing layer. An annealing process may also be performed to activate the strain inducing layer 236.
  • such annealing may be performed at a temperature of between about 1000 degrees Celsius and about 1100 degrees Celsius with rapid thermal anneal (RTA), and/or at a temperature of between about 1100 degrees Celsius and about 1300 degrees Celsius for about a millisecond with a laser and/or flash lamp, for example.
  • RTA rapid thermal anneal
  • the strain inducing layer 236 facilitates desired operation of the device by serving to increase the mobility of carriers within the transistor. It will also be appreciated that the addition of nitrogen to the transistor 200 serves to increase the elasticity or yield strength of the substrate 202 so that the transistor does not deform in response to the strain applied by the strain inducing layer, and more particularly as a result of the annealing process utilized to activate the strain inducing layer, where such annealing or heating can reduce the yield strength of the substrate 202.
  • strain layer could be selectively etched off from either NMOS or PMOS devices.
  • layer 236 could be etched off PMOS regions so that only NMOS regions have the strain layer. Again, this may be followed by annealing the source 228 and/or drain 230 regions followed by removing the strain inducing layer 236 from the NMOS device.
  • Silicide processing may also be performed wherein a refractory metal material is formed over the transistor 200, followed by thermal processing, wherein metal and silicon interfaces react to form a silicide (e.g., on top of the gate structure 204 and in the source 228 and drain 230 regions). Unreacted metal is then stripped away so that interlayer dielectric and metallization layers can be formed.
  • any one or more of the layers set forth herein can be formed in any number of suitable ways, such as with spin-on techniques, sputtering techniques (e.g., magnetron and/or ion beam sputtering), (thermal) growth techniques and/or deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD) and/or plasma enhanced chemical vapor deposition (PECVD), or atomic layer deposition (ALD), for example, and can be patterned in any suitable manner (unless specifically indicated otherwise), such as via etching and/or lithographic techniques, for example.
  • spin-on techniques e.g., magnetron and/or ion beam sputtering
  • PVD physical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic layer deposition
EP06839704.1A 2005-11-07 2006-11-03 Nitrogen based implants for defect reduction in strained silicon Active EP1955372B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/268,040 US7670892B2 (en) 2005-11-07 2005-11-07 Nitrogen based implants for defect reduction in strained silicon
PCT/US2006/060524 WO2007056689A2 (en) 2005-11-07 2006-11-03 Nitrogen based implants for defect reduction in strained silicon

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EP1955372A2 EP1955372A2 (en) 2008-08-13
EP1955372A4 EP1955372A4 (en) 2009-07-22
EP1955372B1 true EP1955372B1 (en) 2018-06-27

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US (2) US7670892B2 (zh)
EP (1) EP1955372B1 (zh)
JP (1) JP5379489B2 (zh)
KR (1) KR101050602B1 (zh)
CN (1) CN101379601B (zh)
WO (1) WO2007056689A2 (zh)

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KR20080065307A (ko) 2008-07-11
US8084312B2 (en) 2011-12-27
JP2009515345A (ja) 2009-04-09
CN101379601A (zh) 2009-03-04
KR101050602B1 (ko) 2011-07-19
WO2007056689A3 (en) 2008-08-28
EP1955372A2 (en) 2008-08-13
JP5379489B2 (ja) 2013-12-25
EP1955372A4 (en) 2009-07-22
WO2007056689A2 (en) 2007-05-18
US7670892B2 (en) 2010-03-02
CN101379601B (zh) 2013-01-16
US20070105294A1 (en) 2007-05-10
US20100120215A1 (en) 2010-05-13

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