EP1934992B1 - Resistance hf a valeur reglee ayant une structure en couches plane - Google Patents

Resistance hf a valeur reglee ayant une structure en couches plane Download PDF

Info

Publication number
EP1934992B1
EP1934992B1 EP06806115A EP06806115A EP1934992B1 EP 1934992 B1 EP1934992 B1 EP 1934992B1 EP 06806115 A EP06806115 A EP 06806115A EP 06806115 A EP06806115 A EP 06806115A EP 1934992 B1 EP1934992 B1 EP 1934992B1
Authority
EP
European Patent Office
Prior art keywords
resistive layer
incision
resistor
layer
energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
EP06806115A
Other languages
German (de)
English (en)
Other versions
EP1934992A1 (fr
Inventor
Frank Weiss
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rosenberger Hochfrequenztechnik GmbH and Co KG
Original Assignee
Rosenberger Hochfrequenztechnik GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rosenberger Hochfrequenztechnik GmbH and Co KG filed Critical Rosenberger Hochfrequenztechnik GmbH and Co KG
Publication of EP1934992A1 publication Critical patent/EP1934992A1/fr
Application granted granted Critical
Publication of EP1934992B1 publication Critical patent/EP1934992B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/24—Terminating devices
    • H01P1/26—Dissipative terminations
    • H01P1/268—Strip line terminations

Definitions

  • the present invention relates to an RF resistor, in particular an RF termination, having a planar layer structure comprising on a substrate a resistance layer for converting RF energy into heat, an input line for supplying RF energy, and a grounding line for electrically connecting to a ground contact, wherein the input wiring is electrically connected to a first end of the resistance layer, the grounding wiring is electrically connected to a first end opposite the second end of the resistance layer, and the resistance layer between the first end and the second end is perpendicular to a propagation direction of the first RF energy is limited to the resistive layer and perpendicular to a normal to the planar layer structure by lateral surfaces, wherein the resistance layer for balancing the characteristic impedance to a predetermined value at least one, the cross-section
  • the invention further relates to a method for balancing the characteristic impedance of an RF resistor, in particular an RF terminating resistor, with a planar layer structure which has on a substrate a resistive layer for converting
  • the structure of the resistive layer is adapted to the high frequency relevant environmental conditions.
  • HF terminating resistors of the o.g. It is known, at the edge of the resistive layer, to electrically deactivate a planar region by incision or to form deep cuts in the cross section of the structure.
  • this results in the problem that locally high current densities occur in the region of the incisions, which lead to high temperatures in the resistance layer.
  • the RF resistor can be used only narrowband or possibly must be sorted out as unusable as rejects of production.
  • the invention is based on the object, an RF resistance o.g. To improve the type such that at the highest possible yield of the manufacturing process and maintaining best RF properties, using increased power dissipation, the heat is optimally distributed on the resistance layer by balancing the characteristic impedance.
  • the incision is formed spaced from the lateral surfaces of the resistive layer.
  • the incision is an architecturally strictured such that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
  • a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, causing the electronic ohmic resistance (sheet resistance ) is changed accordingly over the entire resistance layer.
  • the incision in the plane of the resistance layer is formed U-shaped with two legs and a base connecting the legs and with an open side of the U-shaped notch facing the second end of the resistance layer, wherein the legs of the U-shaped notch essential are formed longer than the base of the U-shaped incision, a current density on the resistive layer is uniformly distributed over a length of the resistive layer in the propagation direction of the RF energy and thereby distributes heat development on the resistive layer in the region of the incision over a larger area.
  • the incision is arranged centrally between the lateral surfaces of the resistance layer.
  • the incision is formed spaced from the side surfaces of the resistive layer.
  • the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
  • a portion of the resistance layer in the propagation direction of the RF energy behind the incision is completely deactivated and no longer contributes to power conduction from the input conductor at the first end of the resistive layer to the grounding interconnect at the second end of the resistive layer, thereby correspondingly increasing the characteristic impedance over the entire resistive layer is changed.
  • these extensions are formed symmetrically to each other.
  • the incision is formed centrally between the lateral surfaces of the resistance layer.
  • an RF termination resistor comprises a resistive layer 10, an input conductive line 12 and a grounding interconnect 14.
  • the resistive layer 10, the input interconnect 12 and the bulk interconnect 14 are formed as respective layers on a substrate 16 forming a planar laminar structure.
  • the input conductor 12 is electrically connected to a first end 18 of the resistive layer 10, and the grounding conductor 14 is electrically connected to a second end 20 of the resistive layer 10 opposite the first end 18.
  • the resistive layer 10 is for converting RF energy to heat
  • the input trace 12 is for supplying RF energy
  • the bulk launch trace 14 is for electrical connection to a ground contact (not shown).
  • the resistive layer 10 is delimited between the first end 18 and the second end 20 in the direction perpendicular to a propagation direction 22 of the RF energy on the resistive layer 10 and perpendicular to a normal 24 to the planar layer structure by lateral surfaces 26.
  • a U-shaped incision 28 which at least partially narrows the cross-section of the resistance layer is formed to balance the characteristic impedance to a predetermined value on the resistive layer 10, which is arranged centrally between the lateral surfaces 26 such that an open end 30 of the U-shaped Incision 28 facing the second end 20 of the resistive layer 10.
  • the U-shaped incision 28 is formed with two parallel legs 32 and a leg connecting the legs 32 34, wherein the legs 32 extend parallel to the propagation direction 22 of the RF energy on the resistive layer 10 and formed substantially longer than the base 34th.
  • the current density is distributed over a large cross-sectional area and locally narrow areas with high current density are avoided. This distributes the resulting heat energy to a larger area, thus avoiding locally high-temperature localized areas.
  • the alignment in the longitudinal direction in the center of the structure is made at a favorable location for heat distribution and at the same time the influence to balance to the best possible fitting values is.
  • the current density is uniformly distributed over the length of the resistor structure 10 in the propagation direction 22 of the RF energy in the incision 28 formed according to the invention.
  • the current-carrying resistance surface is much wider.
  • FIGS. 2 and 3 illustrate the advantageous effect of the incision 28 according to the invention on the characteristic impedance of the resistive layer 10. The values in the FIGS. 2 and 3 are determined from simulations.
  • the 4 to 6 show experimentally determined temperature values at various points of the resistance structure 10 without adjustment ( Fig. 4 ), with adjustment by means of a first embodiment of the incision 28 (FIG. Fig. 5 ) and with adjustment by means of a second embodiment of the incision 28 (FIG. Fig. 6 ).
  • this is purely U-shaped with legs 32 and base 34 is formed.
  • this is like at Fig.
  • the adjustment with the incision 28 according to the invention is technologically very easy to implement and causes homogeneous temperature distribution also or just for very large adjustment slots.
  • the temperature is even lowered by the uniform distribution with a high level of balance. Due to the high power losses, dimensionally large resistance structures result compared to the wavelength.
  • the resistance structure 10 on the substrate 16, in particular that of the resistance surface in the longitudinal direction 22, is adapted by a changing structure width.
  • the possibility of making the incision 28 relatively long for the adjustment also has a positive effect on the reflection factor. Overall, the following advantages are achieved: Constant heat distribution (no hot spots), ensuring very good reflection factors over the entire bandwidth and cost reduction due to high production yield.
  • the favorable properties of the new adjustment method have a direct effect on the use of a resistance substrate. According to the practical application, boundary conditions must be adhered to. This could be, for example, maximum temperature loads of solder joints or maximum permissible temperature tolerances of resistance layers. Due to its advantageous properties, the invention is particularly suitable for the production of high-resistance HF resistors (mass production, assembly line production).
  • the incision is formed in such a way that it completely interrupts the cross section of the resistance layer in the direction of the normal to the planar layer structure.
  • these extensions are formed symmetrically to each other.
  • the incision is formed centrally between the lateral surfaces of the resistance layer.

Landscapes

  • Non-Adjustable Resistors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Materials For Photolithography (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Details Of Resistors (AREA)

Claims (14)

  1. Résistance HF, en particulier résistance de terminaison HF, comprenant une structure en couches planaire, qui comprend sur un substrat (16) une couche résistive (10) pour convertir l'énergie HF en chaleur, une piste conductrice d'entrée (12) pour l'amenée d'énergie HF, et une piste conductrice de masse (14) pour la liaison électrique avec un contact de masse, la piste conductrice d'entrée (12) étant connectée électriquement à une première extrémité (18) de la couche résistive (10), la piste de conductrice de masse (14) étant connectée électriquement à une seconde extrémité (20), opposée à la première extrémité (18), de la couche résistive (10), et la couche résistive (10) étant limitée, entre la première extrémité (18) et la seconde extrémité (20), dans une direction perpendiculaire à une direction de propagation (22) de l'énergie HF vers la couche résistive (10) ainsi que perpendiculaire à une normale (24) à la structure en couche planaire, par des surfaces latérales (26), dans laquelle la couche résistive (10) comprend, pour l'accord de l'impédance caractéristique à une valeur prédéterminée, au moins une entaille qui rétrécit au moins partiellement la section transversale de la couche résistive (10), ladite entaille (28) étant réalisée à distance des surfaces latérales (26) de la couche résistive (10),
    caractérisée en ce que l'entaille (28) est réalisée dans le plan de la couche résistive (10) sous forme de U avec deux branches (32) et une base (34) qui relie les branches (32).
  2. Résistance HF selon la revendication 1, caractérisée en ce que l'entaille (28) est réalisée de telle façon que celle-ci interrompt totalement la section transversale de la couche résistive (10) en direction de la normale (24) à la structure en couches planaire.
  3. Résistance HF selon la revendication 1 ou 2, caractérisée en ce que les branches (32) de l'entaille (28) en forme de U sont réalisées sensiblement plus longues que la base (34) de l'entaille en forme de U (28).
  4. Résistance HF selon l'une au moins des revendications précédentes, caractérisée en ce qu'un côté ouvert (30) de l'entaille en forme de U (28) est tourné vers la seconde extrémité (20) de la couche résistive (10).
  5. Résistance HF selon l'une au moins des revendications précédentes, caractérisée en ce qu'un prolongement respectif (36) de l'entaille (28) est réalisé aux extrémités libres, détournées de la base (34), des branches (32) de l'entaille en forme de U (28).
  6. Résistance HF selon la revendication 5, caractérisée en ce que les prolongements (36) sont réalisés symétriquement l'un par rapport à l'autre.
  7. Résistance HF selon l'une au moins des revendications précédentes, caractérisée en ce que l'entaille (28) est agencée au milieu entre les surfaces latérales (26) de la couche résistive (10).
  8. Procédé pour l'accord de l'impédance caractéristique d'une résistance HF, en particulier d'une résistance de terminaison HF, avec une structure en couches planaire qui comprend, sur un substrat, une couche résistive pour convertir l'énergie HF en chaleur, une piste conductrice d'entrée pour amener l'énergie HF, et une piste conductrice de masse pour la connexion électrique avec un contact de masse, la piste conductrice d'entrée étant connectée électriquement à une première extrémité de la couche résistive, la piste conductrice de masse étant connectée électriquement à une seconde extrémité, opposée à la première extrémité, de la couche résistive, et la couche résistive est limitée, entre la première extrémité et la seconde extrémité, dans une direction perpendiculaire à une direction de propagation de l'énergie HF sur la couche résistive ainsi que perpendiculaire à une normale à la structure en couches planaire, par des surfaces latérales, dans lequel pour l'accord de l'impédance caractéristique à une valeur prédéterminée, au moins une entaille est réalisée sur la couche résistive, laquelle rétrécit au moins partiellement la section transversale de la couche résistive, ladite entaille étant réalisée à distance des surfaces latérales de la couche résistive,
    caractérisé en ce que
    l'entaille est réalisée dans le plan de la couche résistive en forme de U avec deux branches et avec une base qui relie les branches.
  9. Procédé selon la revendication 8, caractérisé en ce que l'entaille est réalisée de telle manière que celle-ci interrompt totalement la section transversale de la couche résistive dans la direction de la normale à la structure en couches planaire.
  10. Procédé selon la revendication 9, caractérisé en ce que l'entaille en forme de U est réalisée de telle façon qu'un côté ouvert de l'entaille en forme de U est tourné vers la seconde extrémité de la couche résistive.
  11. Procédé selon la revendication 9 ou 10, caractérisé en ce que les branches de l'entaille en forme de U sont réalisées sensiblement plus longues que la base de l'entaille en forme de U.
  12. Procédé selon l'une au moins des revendications 8 à 11, caractérisé en ce qu'un prolongement respectif de l'entaille est réalisé aux extrémités libres, détournées de la base, des branches de l'entaille en forme de U.
  13. Procédé selon la revendication 12, caractérisé en ce que ces prolongements sont réalisés symétriquement l'un par rapport à l'autre.
  14. Procédé selon l'une au moins des revendications 8 à 11, caractérisé en ce que l'entaille est réalisée au milieu entre les surfaces latérales de la couche résistive.
EP06806115A 2005-10-11 2006-10-09 Resistance hf a valeur reglee ayant une structure en couches plane Active EP1934992B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE202005015927U DE202005015927U1 (de) 2005-10-11 2005-10-11 Abgeglichener HF-Widerstand mit einer planaren Schichtstruktur
PCT/EP2006/009736 WO2007042243A1 (fr) 2005-10-11 2006-10-09 Resistance hf a valeur reglee ayant une structure en couches plane

Publications (2)

Publication Number Publication Date
EP1934992A1 EP1934992A1 (fr) 2008-06-25
EP1934992B1 true EP1934992B1 (fr) 2009-01-28

Family

ID=35530599

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06806115A Active EP1934992B1 (fr) 2005-10-11 2006-10-09 Resistance hf a valeur reglee ayant une structure en couches plane

Country Status (10)

Country Link
US (1) US8063731B2 (fr)
EP (1) EP1934992B1 (fr)
JP (1) JP2009512293A (fr)
CN (1) CN101288134B (fr)
AT (1) ATE422096T1 (fr)
CA (1) CA2624472C (fr)
DE (2) DE202005015927U1 (fr)
HK (1) HK1124954A1 (fr)
NO (1) NO337881B1 (fr)
WO (1) WO2007042243A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5419088B2 (ja) * 2010-01-07 2014-02-19 アルパイン株式会社 基板減衰回路
CN101923928B (zh) * 2010-03-25 2012-05-23 四平市吉华高新技术有限公司 一种高频贴片电阻器及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1945839B2 (de) * 1969-09-10 1978-03-30 Siemens Ag, 1000 Berlin Und 8000 Muenchen Abschlusswiderstand in Streifenleitungstechnik
DE2634812C2 (de) * 1976-08-03 1983-05-05 Spinner-GmbH Elektrotechnische Fabrik, 8000 München HF-Leistungsabschlußwiderstand
US4148005A (en) * 1977-10-14 1979-04-03 The United States Of America As Represented By The Secretary Of The Army Thermometric transducer device
JPH01304705A (ja) * 1988-06-01 1989-12-08 Murata Mfg Co Ltd 膜抵抗体のトリミング方法
DE3843600C1 (en) * 1988-12-23 1990-03-22 Rohde & Schwarz Gmbh & Co Kg, 8000 Muenchen, De High-frequency power terminating impedance
US6007755A (en) * 1995-02-21 1999-12-28 Murata Manufacturing Co., Ltd. Resistor trimming method
US6148502A (en) * 1997-10-02 2000-11-21 Vishay Sprague, Inc. Surface mount resistor and a method of making the same
FI106414B (fi) * 1999-02-02 2001-01-31 Nokia Networks Oy Laajakaistainen impedanssisovitin

Also Published As

Publication number Publication date
CA2624472A1 (fr) 2007-04-19
EP1934992A1 (fr) 2008-06-25
HK1124954A1 (en) 2009-07-24
ATE422096T1 (de) 2009-02-15
WO2007042243A1 (fr) 2007-04-19
US20090206981A1 (en) 2009-08-20
CN101288134B (zh) 2011-02-09
DE502006002761D1 (de) 2009-03-19
DE202005015927U1 (de) 2005-12-29
US8063731B2 (en) 2011-11-22
CA2624472C (fr) 2013-06-04
CN101288134A (zh) 2008-10-15
JP2009512293A (ja) 2009-03-19
NO337881B1 (no) 2016-07-04
NO20082123L (no) 2008-05-06

Similar Documents

Publication Publication Date Title
DE19927948B4 (de) Chipthermistoren und Verfahren zum Herstellen derselben
EP2553784B1 (fr) Rail de distribution pour un distributeur électrique dans des véhicules, ainsi que distributeur électrique possédant un tel rail de distribution
DE2619312A1 (de) Halbleiter-heizelement
DE2738326A1 (de) Mikrowellenanordnung zum umwandeln einer hohlleiterstruktur in eine mikrostreifenleiterstruktur
DE60218230T2 (de) Elektrischer faltbarer Zungenanschluss
DE60028360T2 (de) Ptk-chipthermistor
DE2144607A1 (de) Elektroakustische Einrichtung mit einem piezoelektrischen Wandler
DE102007054621A1 (de) Hochfrequenzfilter mit elektromagnetisch gekoppelten Verzweigungsleitungen
EP1934992B1 (fr) Resistance hf a valeur reglee ayant une structure en couches plane
EP1917667B1 (fr) Resistance terminale hf presentant une structure de couches plane
DE202008009225U1 (de) Streifenleitung mit Durchkontaktierung
DE112019003092T5 (de) Resonator und Filter
DE69930169T2 (de) Mikromechanischer schalter
WO2003075404A1 (fr) Dispositif d'antennes a dipole plan
EP1698840B1 (fr) Appareil de chauffage à CTP, en particulier pour véhicule
DE102023106461B4 (de) Widerstandsgerät
DE3843600C1 (en) High-frequency power terminating impedance
EP3261409A1 (fr) Procédé de fabrication d'un dispositif de chauffage et dispositif de chauffage
DE102022121593B4 (de) Heizelement mit integrierter Elektrode
DE102009049609A1 (de) Streifenleiter-Balun
EP2118910B1 (fr) Résistance terminale hf à structure en bride
DE2437312B2 (de) Verfahren zur Herstellung eines abgeglichenen Schichtwiderstandes
DE10216629A1 (de) Elektrothermofilm-Heizvorrichtung
EP3010306B1 (fr) Module de chauffage de surfaces, système de chauffage de surfaces
DE102012221510A1 (de) Elektrodenbeschichtungsanordnung zur Verringerung der Blutadhäsion an HF-Elektroden

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080313

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

DAX Request for extension of the european patent (deleted)
GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC NL PL PT RO SE SI SK TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

Free format text: NOT ENGLISH

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: CH

Ref legal event code: NV

Representative=s name: HANS RUDOLF GACHNANG PATENTANWALT

REG Reference to a national code

Ref country code: IE

Ref legal event code: FG4D

Free format text: LANGUAGE OF EP DOCUMENT: GERMAN

REF Corresponds to:

Ref document number: 502006002761

Country of ref document: DE

Date of ref document: 20090319

Kind code of ref document: P

REG Reference to a national code

Ref country code: SE

Ref legal event code: TRGR

NLV1 Nl: lapsed or annulled due to failure to fulfill the requirements of art. 29p and 29m of the patents act
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090509

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

REG Reference to a national code

Ref country code: IE

Ref legal event code: FD4D

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090528

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090629

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: IE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20091029

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BG

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090428

BERE Be: lapsed

Owner name: ROSENBERGER HOCHFREQUENZTECHNIK G.M.B.H. & CO. KG

Effective date: 20091031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20091031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090429

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20091031

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: AT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20091009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20091009

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: HU

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090729

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: TR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: CY

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20090128

REG Reference to a national code

Ref country code: CH

Ref legal event code: NV

Representative=s name: GACHNANG AG PATENTANWAELTE, CH

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 10

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 11

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 12

REG Reference to a national code

Ref country code: FR

Ref legal event code: PLFP

Year of fee payment: 13

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20221024

Year of fee payment: 17

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: SE

Payment date: 20221024

Year of fee payment: 17

Ref country code: IT

Payment date: 20221020

Year of fee payment: 17

Ref country code: GB

Payment date: 20221018

Year of fee payment: 17

Ref country code: FI

Payment date: 20221019

Year of fee payment: 17

Ref country code: DE

Payment date: 20221028

Year of fee payment: 17

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: CH

Payment date: 20221027

Year of fee payment: 17

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230522

REG Reference to a national code

Ref country code: DE

Ref legal event code: R082

Ref document number: 502006002761

Country of ref document: DE

Representative=s name: KANDLBINDER, MARKUS, DIPL.-PHYS., DE

REG Reference to a national code

Ref country code: CH

Ref legal event code: PK

Free format text: BERICHTIGUNGEN

REG Reference to a national code

Ref country code: SE

Ref legal event code: EUG