EP1925003A4 - SIOX: SI COMPOSITE MATERIAL COMPOSITIONS AND MANUFACTURING METHOD THEREFOR - Google Patents

SIOX: SI COMPOSITE MATERIAL COMPOSITIONS AND MANUFACTURING METHOD THEREFOR

Info

Publication number
EP1925003A4
EP1925003A4 EP06801634A EP06801634A EP1925003A4 EP 1925003 A4 EP1925003 A4 EP 1925003A4 EP 06801634 A EP06801634 A EP 06801634A EP 06801634 A EP06801634 A EP 06801634A EP 1925003 A4 EP1925003 A4 EP 1925003A4
Authority
EP
European Patent Office
Prior art keywords
siox
methods
composite material
making same
material compositions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP06801634A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP1925003A2 (en
Inventor
David E Stevenson
Li Q Zhou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wintek Electro Optics Corp
Original Assignee
Wintek Electro Optics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wintek Electro Optics Corp filed Critical Wintek Electro Optics Corp
Publication of EP1925003A2 publication Critical patent/EP1925003A2/en
Publication of EP1925003A4 publication Critical patent/EP1925003A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
    • H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/14—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silica
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/628—Coating the powders or the macroscopic reinforcing agents
    • C04B35/62844—Coating fibres
    • C04B35/62878—Coating fibres with boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C04B35/6455—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/04—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of carbon-silicon compounds, carbon or silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3418—Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42—Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428—Silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Dispersion Chemistry (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Compounds (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Products (AREA)
EP06801634A 2005-08-11 2006-08-11 SIOX: SI COMPOSITE MATERIAL COMPOSITIONS AND MANUFACTURING METHOD THEREFOR Withdrawn EP1925003A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/201,791 US7790060B2 (en) 2005-08-11 2005-08-11 SiOx:Si composite material compositions and methods of making same
PCT/US2006/031995 WO2007022276A2 (en) 2005-08-11 2006-08-11 Siox:si composite material compositions and methods of making same

Publications (2)

Publication Number Publication Date
EP1925003A2 EP1925003A2 (en) 2008-05-28
EP1925003A4 true EP1925003A4 (en) 2009-04-29

Family

ID=37741782

Family Applications (1)

Application Number Title Priority Date Filing Date
EP06801634A Withdrawn EP1925003A4 (en) 2005-08-11 2006-08-11 SIOX: SI COMPOSITE MATERIAL COMPOSITIONS AND MANUFACTURING METHOD THEREFOR

Country Status (8)

Country Link
US (1) US7790060B2 (ko)
EP (1) EP1925003A4 (ko)
JP (1) JP2009504556A (ko)
KR (1) KR20080044267A (ko)
CN (1) CN101405426A (ko)
RU (1) RU2008108937A (ko)
TW (1) TW200729234A (ko)
WO (1) WO2007022276A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7658822B2 (en) * 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
US7790060B2 (en) 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets
MY160229A (en) * 2008-07-09 2017-02-28 Evonik Degussa Gmbh Silicon-based green bodies
KR102347960B1 (ko) 2015-02-03 2022-01-05 삼성전자주식회사 도전체 및 그 제조 방법
CN113526516B (zh) * 2021-09-16 2021-12-03 北京壹金新能源科技有限公司 一种改性氧化亚硅及其制备方法和用途

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト
WO2003082769A1 (fr) * 2002-04-02 2003-10-09 Sumitomo Titanium Corporation Produit fritte de monoxyde de silicium et cible de pulverisation contenant celui-ci

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849344A (en) * 1972-03-31 1974-11-19 Carborundum Co Solid diffusion sources containing phosphorus and silicon
NL7907160A (nl) * 1979-09-26 1981-03-30 Holec Nv Werkwijze voor het vervaardigen van gevormde elektrisch geleidende voortbrengsels uit siliciumpoeder, alsmede met toepassing van deze werkwijze verkregen gevormde voortbrengsels.
US4451969A (en) * 1983-01-10 1984-06-05 Mobil Solar Energy Corporation Method of fabricating solar cells
US4859553A (en) * 1987-05-04 1989-08-22 Xerox Corporation Imaging members with plasma deposited silicon oxides
JPH0428858A (ja) 1990-05-24 1992-01-31 Mitsubishi Heavy Ind Ltd 蒸着用材料の製造方法
JP2915177B2 (ja) 1990-11-30 1999-07-05 株式会社日立製作所 スパッタリングターゲットの製造方法及びこの方法によって製造されたスパッタリングターゲット
JPH055117A (ja) 1991-04-15 1993-01-14 Nippon Steel Corp 冶金用精錬容器内の溶融物レベル検知方法
US5320729A (en) * 1991-07-19 1994-06-14 Hitachi, Ltd. Sputtering target
ATE332572T1 (de) * 1996-06-19 2006-07-15 Matsushita Electric Ind Co Ltd Photoelektronisches material, dieses verwendende vorrichtungen und herstellungsverfahren
JP4072872B2 (ja) 1996-08-21 2008-04-09 東洋紡績株式会社 電極基板
KR100269310B1 (ko) * 1997-09-29 2000-10-16 윤종용 도전성확산장벽층을사용하는반도체장치제조방법
US6616890B2 (en) * 2001-06-15 2003-09-09 Harvest Precision Components, Inc. Fabrication of an electrically conductive silicon carbide article
JP4729253B2 (ja) * 2001-07-26 2011-07-20 株式会社大阪チタニウムテクノロジーズ 一酸化けい素焼結体および一酸化けい素焼結ターゲット
JP2004063433A (ja) * 2001-12-26 2004-02-26 Shin Etsu Chem Co Ltd 導電性酸化珪素粉末、その製造方法及び該粉末を用いた非水電解質二次電池用負極材
KR100505536B1 (ko) * 2002-03-27 2005-08-04 스미토모 긴조쿠 고잔 가부시키가이샤 투명한 도전성 박막, 그것의 제조방법, 그것의 제조를위한 소결 타겟, 디스플레이 패널용의 투명한 전기전도성기재, 및 유기 전기루미네선스 디바이스
TWI278429B (en) * 2002-05-17 2007-04-11 Shinetsu Chemical Co Conductive silicon composite, preparation thereof, and negative electrode material for non-aqueous electrolyte secondary cell
JP4514087B2 (ja) 2002-09-25 2010-07-28 シャープ株式会社 メモリ膜構造、メモリ素子及びその製造方法、並びに、半導体集積回路及びそれを用いた携帯電子機器
JP3930452B2 (ja) * 2003-04-28 2007-06-13 住友チタニウム株式会社 一酸化珪素焼結体およびスパッタリングターゲット
US7790060B2 (en) 2005-08-11 2010-09-07 Wintek Electro Optics Corporation SiOx:Si composite material compositions and methods of making same
US7658822B2 (en) * 2005-08-11 2010-02-09 Wintek Electro-Optics Corporation SiOx:Si composite articles and methods of making same
US7749406B2 (en) * 2005-08-11 2010-07-06 Stevenson David E SiOx:Si sputtering targets and method of making and using such targets

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166965A (ja) * 1986-12-27 1988-07-11 Koujiyundo Kagaku Kenkyusho:Kk 蒸着用タ−ゲツト
WO2003082769A1 (fr) * 2002-04-02 2003-10-09 Sumitomo Titanium Corporation Produit fritte de monoxyde de silicium et cible de pulverisation contenant celui-ci

Also Published As

Publication number Publication date
WO2007022276A2 (en) 2007-02-22
US7790060B2 (en) 2010-09-07
RU2008108937A (ru) 2009-09-20
WO2007022276A3 (en) 2008-10-16
CN101405426A (zh) 2009-04-08
EP1925003A2 (en) 2008-05-28
KR20080044267A (ko) 2008-05-20
TW200729234A (en) 2007-08-01
US20070034837A1 (en) 2007-02-15
JP2009504556A (ja) 2009-02-05

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