EP1897125A4 - Verfahren zum herstellen von dislokationsfreien verspannten kristallinen filmen - Google Patents

Verfahren zum herstellen von dislokationsfreien verspannten kristallinen filmen

Info

Publication number
EP1897125A4
EP1897125A4 EP05794703A EP05794703A EP1897125A4 EP 1897125 A4 EP1897125 A4 EP 1897125A4 EP 05794703 A EP05794703 A EP 05794703A EP 05794703 A EP05794703 A EP 05794703A EP 1897125 A4 EP1897125 A4 EP 1897125A4
Authority
EP
European Patent Office
Prior art keywords
crystalline films
strained crystalline
producing dislocation
free strained
free
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05794703A
Other languages
English (en)
French (fr)
Other versions
EP1897125A1 (de
Inventor
Ya-Hong Xie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of California
Original Assignee
University of California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of California filed Critical University of California
Publication of EP1897125A1 publication Critical patent/EP1897125A1/de
Publication of EP1897125A4 publication Critical patent/EP1897125A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
EP05794703A 2005-06-27 2005-06-28 Verfahren zum herstellen von dislokationsfreien verspannten kristallinen filmen Withdrawn EP1897125A4 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/168,171 US7262112B2 (en) 2005-06-27 2005-06-27 Method for producing dislocation-free strained crystalline films
PCT/US2005/022683 WO2007001299A1 (en) 2005-06-27 2005-06-28 Method for producing dislocation-free strained crystalline films

Publications (2)

Publication Number Publication Date
EP1897125A1 EP1897125A1 (de) 2008-03-12
EP1897125A4 true EP1897125A4 (de) 2011-08-10

Family

ID=37568081

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05794703A Withdrawn EP1897125A4 (de) 2005-06-27 2005-06-28 Verfahren zum herstellen von dislokationsfreien verspannten kristallinen filmen

Country Status (6)

Country Link
US (2) US7262112B2 (de)
EP (1) EP1897125A4 (de)
JP (1) JP5107911B2 (de)
KR (1) KR101133871B1 (de)
CN (1) CN100541725C (de)
WO (1) WO2007001299A1 (de)

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US7485544B2 (en) * 2006-08-02 2009-02-03 Micron Technology, Inc. Strained semiconductor, devices and systems and methods of formation
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US7968960B2 (en) 2006-08-18 2011-06-28 Micron Technology, Inc. Methods of forming strained semiconductor channels
US8367518B2 (en) 2008-05-30 2013-02-05 Alta Devices, Inc. Epitaxial lift off stack having a multi-layered handle and methods thereof
JP5343419B2 (ja) * 2008-06-27 2013-11-13 住友電気工業株式会社 成膜方法
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US7810355B2 (en) 2008-06-30 2010-10-12 Apple Inc. Full perimeter chemical strengthening of substrates
US7918019B2 (en) * 2009-01-09 2011-04-05 Apple Inc. Method for fabricating thin touch sensor panels
US9063605B2 (en) 2009-01-09 2015-06-23 Apple Inc. Thin glass processing using a carrier
US8501139B2 (en) * 2009-02-26 2013-08-06 Uri Cohen Floating Si and/or Ge foils
US8603242B2 (en) * 2009-02-26 2013-12-10 Uri Cohen Floating semiconductor foils
CN102388003B (zh) 2009-03-02 2014-11-19 苹果公司 用于强化用于便携式电子设备的玻璃盖的技术
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US10781135B2 (en) 2011-03-16 2020-09-22 Apple Inc. Strengthening variable thickness glass
US9128666B2 (en) 2011-05-04 2015-09-08 Apple Inc. Housing for portable electronic device with reduced border region
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US9944554B2 (en) 2011-09-15 2018-04-17 Apple Inc. Perforated mother sheet for partial edge chemical strengthening and method therefor
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CN102437086B (zh) * 2011-11-16 2014-09-24 西安电子科技大学 基于SiN埋绝缘层的机械致单轴应变GeOI晶圆的制作方法
CN102403259B (zh) * 2011-11-16 2014-10-08 西安电子科技大学 基于机械弯曲台的单轴应变GeOI晶圆的制作方法
US10144669B2 (en) 2011-11-21 2018-12-04 Apple Inc. Self-optimizing chemical strengthening bath for glass
US10133156B2 (en) 2012-01-10 2018-11-20 Apple Inc. Fused opaque and clear glass for camera or display window
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US8773848B2 (en) 2012-01-25 2014-07-08 Apple Inc. Fused glass device housings
US20130193483A1 (en) * 2012-01-27 2013-08-01 International Business Machines Corporation Mosfet Structures Having Compressively Strained Silicon Channel
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US9583364B2 (en) * 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial compression
CN103065938B (zh) * 2012-12-31 2015-06-10 中国科学院上海微系统与信息技术研究所 一种制备直接带隙Ge薄膜的方法
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JP6225562B2 (ja) * 2013-08-30 2017-11-08 株式会社Sumco Ｓｏｉウェーハの製造方法
JP6184843B2 (ja) * 2013-11-18 2017-08-23 東芝メモリ株式会社 基板接合方法、及び基板接合装置
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JP6834816B2 (ja) 2017-07-10 2021-02-24 株式会社Sumco シリコンウェーハの加工方法
EP3989272A1 (de) * 2017-07-14 2022-04-27 Sunedison Semiconductor Limited Verfahren zur herstellung einer halbleiter-auf-isolator-struktur
FR3077923B1 (fr) 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
CN111128894B (zh) * 2020-01-17 2022-03-18 上海华力集成电路制造有限公司 Cmos器件的沟道区的应力调节结构及应力调节方法
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EP0410679A1 (de) * 1989-07-25 1991-01-30 Shin-Etsu Handotai Company Limited Verfahren zur Vorbereitung eines Substrats für die Herstellung von Halbleiterbauelementen
US6756285B1 (en) * 1999-02-10 2004-06-29 Commissariat A L'energie Atomique Multilayer structure with controlled internal stresses and making same
WO2004064132A1 (fr) * 2002-12-09 2004-07-29 Commissariat A L'energie Atomique Procede de realisation d'une structure complexe par assemblage de structures contraintes
US20050020094A1 (en) * 2003-07-21 2005-01-27 Micron Technology, Inc. Strained semiconductor by full wafer bonding

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Patent Citations (4)

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EP0410679A1 (de) * 1989-07-25 1991-01-30 Shin-Etsu Handotai Company Limited Verfahren zur Vorbereitung eines Substrats für die Herstellung von Halbleiterbauelementen
US6756285B1 (en) * 1999-02-10 2004-06-29 Commissariat A L'energie Atomique Multilayer structure with controlled internal stresses and making same
WO2004064132A1 (fr) * 2002-12-09 2004-07-29 Commissariat A L'energie Atomique Procede de realisation d'une structure complexe par assemblage de structures contraintes
US20050020094A1 (en) * 2003-07-21 2005-01-27 Micron Technology, Inc. Strained semiconductor by full wafer bonding

Also Published As

Publication number Publication date
JP5107911B2 (ja) 2012-12-26
JP2008547219A (ja) 2008-12-25
KR101133871B1 (ko) 2012-04-06
US20060292822A1 (en) 2006-12-28
KR20080040638A (ko) 2008-05-08
WO2007001299A1 (en) 2007-01-04
EP1897125A1 (de) 2008-03-12
CN100541725C (zh) 2009-09-16
CN101203943A (zh) 2008-06-18
US7262112B2 (en) 2007-08-28
US7265028B2 (en) 2007-09-04
US20070128830A1 (en) 2007-06-07

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