EP1756663B1 - Fluiddruckkompensation für eine immersionslithographielinse - Google Patents

Fluiddruckkompensation für eine immersionslithographielinse Download PDF

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Publication number
EP1756663B1
EP1756663B1 EP04814940.5A EP04814940A EP1756663B1 EP 1756663 B1 EP1756663 B1 EP 1756663B1 EP 04814940 A EP04814940 A EP 04814940A EP 1756663 B1 EP1756663 B1 EP 1756663B1
Authority
EP
European Patent Office
Prior art keywords
wafer
gas
immersion
gap
fluid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP04814940.5A
Other languages
English (en)
French (fr)
Other versions
EP1756663A4 (de
EP1756663A1 (de
Inventor
Douglas C. Watson
W. Thomas Novak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of EP1756663A1 publication Critical patent/EP1756663A1/de
Publication of EP1756663A4 publication Critical patent/EP1756663A4/de
Application granted granted Critical
Publication of EP1756663B1 publication Critical patent/EP1756663B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation

Definitions

  • the present invention relates generally to lithography, and more particularly, to an apparatus and method for compensating for pressure exerted on the lithography lens caused by the immersion fluid.
  • a lithography apparatus is used to transfer images defined by a reticle or other patterning element such as a programmable mirror array (see US Patents 5,296,891 , 5,523,193 and PCT applications 98/38597 and 98/33096 for example, all incorporated by reference herein) onto a semiconductor wafer during fabrication.
  • a typical lithography apparatus includes an illumination source, a reticle stage assembly for positioning the reticle, a wafer stage for supporting the wafer, and an optical assembly including lenses for projecting the image defined by the reticle onto the wafer. Control and measurement systems are also provided to control the movement of the wafer and measure the position of the wafer relative to the optical assembly respectively.
  • Immersion lithography systems utilize a layer of immersion fluid that fills a gap between the final lens of the optical assembly and the wafer.
  • the fluid enhances the resolution of the system by enabling exposures with numerical apertures (NA) greater than one, which is the theoretical limit for conventional "dry" lithography.
  • NA numerical apertures
  • the fluid in the gap permits the exposure with light that would otherwise be totally internally reflected at the optical-air interface.
  • numerical apertures as high as the index of refraction of the immersion fluid are possible.
  • Fluid immersion also increases the depth of focus, which is the tolerable error in the vertical position of the wafer, compared to a conventional lithography system.
  • Immersion lithography thus has the capability of providing resolution down to 50 nanometers or lower.
  • An apparatus and method for compensating for pressure exerted on the lithography lens caused by the immersion fluid is therefore needed.
  • the present invention is related to an immersion lithography system that compensating for any displacement of the optical caused by the immersion fluid.
  • the system includes an optical assembly to project an image defined by the reticle onto the wafer.
  • the optical assembly includes a final optical element spaced from the wafer by a gap.
  • An immersion element is provided to supply an immersion fluid into the gap and to recover any immersion fluid that escapes the gap.
  • a fluid compensation system is provided to compensate for the force on the final optical element of the optical assembly caused by pressure variations of the immersion fluid to minimize the displacement of the final optical element. The resulting force created by the varying pressure may cause final optical element to become displaced.
  • the fluid compensation system is configured to provide a substantially equal, but opposite force on the optical assembly, to prevent the displacement of the final optical element.
  • circuit patterns are formed by repetition of these preprocessing and post-processing steps.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Claims (10)

  1. Vorrichtung mit:
    einem Wafer-Tisch (18), der zum halten eines Wafer (20) konfiguriert ist;
    einem optischen System (14), das dazu konfiguriert ist, ein Bild auf den Wafer, zu projizieren, der auf dem Wafer-Tisch gehalten wird, wobei das optisches System ein letztes optisches Element (16) und eine Linsenhalterung aufweist, die durch einen Spalt (24) von dem Wafer getrennt ist;
    einem Immersionselement (22), das dazu konfiguriert ist, eine Immersionsflüssigkeit (34) in den Spalt (24) zwischen dem letzten optischen Element und dem Wafer zu befördern, wobei das Immersionselement eine oder mehrere Gasdüsen (76) zum um bereitstellen eines Glasflusses aufweist; und
    einem Gasregelungssystem (84), dass dazu konfiguriert ist, die Geschwindigkeit des Gasflusses von der einen oder den mehreren Gasdüsen zu steuern;
    dadurch gekennzeichnet, dass
    ein Drucksensor (80) dazu konfiguriert ist, den Druck der Immersionsflüssigkeit in dem Spalt (24) zu messen; und
    das Gasregelungssystem (84) mit dem Drucksensor (80) gekoppelt und dazu konfiguriert ist, die Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen auf der Grundlage des mit dem Drucksensor gemessenen Druckes zu steuern.
  2. Vorrichtung nach Anspruch 1, bei der der Glasfluss aus der einen oder den mehreren Gasdüsen (76) dazu eingesetzt wird, die Immersionsflüssigkeit im wesentlichen in dem Spalt zu halten (24).
  3. Vorrichtung nach Anspruch 1 oder 2, bei der der Glasfluss aus der eine oder den mehreren Gasdüsen (76) dazu eingesetzt wird, ein Luftlager zur Abstützung des Immersionselements (22) zu bilden.
  4. Vorrichtung nach einem der Ansprüche 1 bis 3, bei der das Gasregelungssystem (84) außerdem dazu konfiguriert ist, durch Regelung der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) den Spalt (24) zwischen dem Immersionselement (22) und dem Wafer (20) einzustellen.
  5. Vorrichtung nach einem der Ansprüche 1 bis 4, bei der die eine oder die mehreren Gasdüsen (76) um den Umfang des Spaltes (24) herum angeordnet sind.
  6. Verfahren zur Herstellung eines Halbleiterbauelements, mit:
    belichten eines Wafers (20) unter Einsatz der Vorrichtung nach einem der Ansprüche 1 bis 5; und
    entwickeln des belichteten Wafers.
  7. Belichtungsverfahren, bei dem ein optisches System (14) dazu konfiguriert wird, ein Bild auf einen Wafer (20) zu projizieren, der auf einem Wafer-Tisch (18) gehalten wird, wobei das optische System ein letztes optisches Element (16) aufweist, das durch einen Spalt (24) von dem Wafer beabstandet ist, wobei das Verfahren umfasst:
    einbringen eines Immersionsfluids (34) in den Spalt zwischen dem letzten optischen Element und dem Wafer mit Hilfe eines Immersionselements (22), das eine oder mehrere Gasdüsen (76) aufweist und dazu konfiguriert ist, einen Gasfluss bereitzustellen;
    gekennzeichnet durch:
    messen des Druckes des Immersionsfluids in dem Spalt (24) mit Hilfe eines Drucksensors (80); und
    steuern der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) anhand des Druckes, der durch den Drucksensor (80) gemessen wurde, unter Einsatz eines mit dem Drucksensor gekoppelten Gassteuerungssystems (84).
  8. Verfahren nach Anspruch 7, bei dem der Gasfluss aus der einen oder den mehreren Gasdüsen (76) das Immersionsfluid (34) im wesentlichen in dem Spalt (24) hält.
  9. Verfahren nach Anspruch 7 oder 8, bei dem der Gasfluss aus der einen oder den mehreren Gasdüsen ein Luftlager erzeugt, das das Immersionselement (22) stützt.
  10. Verfahren nach einem der Ansprüche 7 bis 9, bei dem das Gassteuerungssystem (84) durch Steuerung der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) den Spalt (24) zwischen dem Immersionselement und dem Wafer einstellt.
EP04814940.5A 2004-06-17 2004-12-20 Fluiddruckkompensation für eine immersionslithographielinse Not-in-force EP1756663B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58051004P 2004-06-17 2004-06-17
PCT/US2004/042808 WO2006009573A1 (en) 2004-06-17 2004-12-20 Fluid pressure compensation for immersion lithography lens

Publications (3)

Publication Number Publication Date
EP1756663A1 EP1756663A1 (de) 2007-02-28
EP1756663A4 EP1756663A4 (de) 2009-08-12
EP1756663B1 true EP1756663B1 (de) 2015-12-16

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EP04814940.5A Not-in-force EP1756663B1 (de) 2004-06-17 2004-12-20 Fluiddruckkompensation für eine immersionslithographielinse

Country Status (6)

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US (2) US7688421B2 (de)
EP (1) EP1756663B1 (de)
JP (1) JP4623095B2 (de)
KR (1) KR101259190B1 (de)
HK (1) HK1095388A1 (de)
WO (1) WO2006009573A1 (de)

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Also Published As

Publication number Publication date
US20080316445A1 (en) 2008-12-25
JP2008503088A (ja) 2008-01-31
JP4623095B2 (ja) 2011-02-02
KR20070026824A (ko) 2007-03-08
EP1756663A4 (de) 2009-08-12
WO2006009573A1 (en) 2006-01-26
US7688421B2 (en) 2010-03-30
HK1095388A1 (en) 2007-05-04
KR101259190B1 (ko) 2013-04-29
US20100149513A1 (en) 2010-06-17
EP1756663A1 (de) 2007-02-28

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