EP1756663B1 - Fluiddruckkompensation für eine immersionslithographielinse - Google Patents
Fluiddruckkompensation für eine immersionslithographielinse Download PDFInfo
- Publication number
- EP1756663B1 EP1756663B1 EP04814940.5A EP04814940A EP1756663B1 EP 1756663 B1 EP1756663 B1 EP 1756663B1 EP 04814940 A EP04814940 A EP 04814940A EP 1756663 B1 EP1756663 B1 EP 1756663B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- wafer
- gas
- immersion
- gap
- fluid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/52—Details
- G03B27/58—Baseboards, masking frames, or other holders for the sensitive material
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
Definitions
- the present invention relates generally to lithography, and more particularly, to an apparatus and method for compensating for pressure exerted on the lithography lens caused by the immersion fluid.
- a lithography apparatus is used to transfer images defined by a reticle or other patterning element such as a programmable mirror array (see US Patents 5,296,891 , 5,523,193 and PCT applications 98/38597 and 98/33096 for example, all incorporated by reference herein) onto a semiconductor wafer during fabrication.
- a typical lithography apparatus includes an illumination source, a reticle stage assembly for positioning the reticle, a wafer stage for supporting the wafer, and an optical assembly including lenses for projecting the image defined by the reticle onto the wafer. Control and measurement systems are also provided to control the movement of the wafer and measure the position of the wafer relative to the optical assembly respectively.
- Immersion lithography systems utilize a layer of immersion fluid that fills a gap between the final lens of the optical assembly and the wafer.
- the fluid enhances the resolution of the system by enabling exposures with numerical apertures (NA) greater than one, which is the theoretical limit for conventional "dry" lithography.
- NA numerical apertures
- the fluid in the gap permits the exposure with light that would otherwise be totally internally reflected at the optical-air interface.
- numerical apertures as high as the index of refraction of the immersion fluid are possible.
- Fluid immersion also increases the depth of focus, which is the tolerable error in the vertical position of the wafer, compared to a conventional lithography system.
- Immersion lithography thus has the capability of providing resolution down to 50 nanometers or lower.
- An apparatus and method for compensating for pressure exerted on the lithography lens caused by the immersion fluid is therefore needed.
- the present invention is related to an immersion lithography system that compensating for any displacement of the optical caused by the immersion fluid.
- the system includes an optical assembly to project an image defined by the reticle onto the wafer.
- the optical assembly includes a final optical element spaced from the wafer by a gap.
- An immersion element is provided to supply an immersion fluid into the gap and to recover any immersion fluid that escapes the gap.
- a fluid compensation system is provided to compensate for the force on the final optical element of the optical assembly caused by pressure variations of the immersion fluid to minimize the displacement of the final optical element. The resulting force created by the varying pressure may cause final optical element to become displaced.
- the fluid compensation system is configured to provide a substantially equal, but opposite force on the optical assembly, to prevent the displacement of the final optical element.
- circuit patterns are formed by repetition of these preprocessing and post-processing steps.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Claims (10)
- Vorrichtung mit:einem Wafer-Tisch (18), der zum halten eines Wafer (20) konfiguriert ist;einem optischen System (14), das dazu konfiguriert ist, ein Bild auf den Wafer, zu projizieren, der auf dem Wafer-Tisch gehalten wird, wobei das optisches System ein letztes optisches Element (16) und eine Linsenhalterung aufweist, die durch einen Spalt (24) von dem Wafer getrennt ist;einem Immersionselement (22), das dazu konfiguriert ist, eine Immersionsflüssigkeit (34) in den Spalt (24) zwischen dem letzten optischen Element und dem Wafer zu befördern, wobei das Immersionselement eine oder mehrere Gasdüsen (76) zum um bereitstellen eines Glasflusses aufweist; undeinem Gasregelungssystem (84), dass dazu konfiguriert ist, die Geschwindigkeit des Gasflusses von der einen oder den mehreren Gasdüsen zu steuern;dadurch gekennzeichnet, dassein Drucksensor (80) dazu konfiguriert ist, den Druck der Immersionsflüssigkeit in dem Spalt (24) zu messen; unddas Gasregelungssystem (84) mit dem Drucksensor (80) gekoppelt und dazu konfiguriert ist, die Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen auf der Grundlage des mit dem Drucksensor gemessenen Druckes zu steuern.
- Vorrichtung nach Anspruch 1, bei der der Glasfluss aus der einen oder den mehreren Gasdüsen (76) dazu eingesetzt wird, die Immersionsflüssigkeit im wesentlichen in dem Spalt zu halten (24).
- Vorrichtung nach Anspruch 1 oder 2, bei der der Glasfluss aus der eine oder den mehreren Gasdüsen (76) dazu eingesetzt wird, ein Luftlager zur Abstützung des Immersionselements (22) zu bilden.
- Vorrichtung nach einem der Ansprüche 1 bis 3, bei der das Gasregelungssystem (84) außerdem dazu konfiguriert ist, durch Regelung der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) den Spalt (24) zwischen dem Immersionselement (22) und dem Wafer (20) einzustellen.
- Vorrichtung nach einem der Ansprüche 1 bis 4, bei der die eine oder die mehreren Gasdüsen (76) um den Umfang des Spaltes (24) herum angeordnet sind.
- Verfahren zur Herstellung eines Halbleiterbauelements, mit:belichten eines Wafers (20) unter Einsatz der Vorrichtung nach einem der Ansprüche 1 bis 5; undentwickeln des belichteten Wafers.
- Belichtungsverfahren, bei dem ein optisches System (14) dazu konfiguriert wird, ein Bild auf einen Wafer (20) zu projizieren, der auf einem Wafer-Tisch (18) gehalten wird, wobei das optische System ein letztes optisches Element (16) aufweist, das durch einen Spalt (24) von dem Wafer beabstandet ist, wobei das Verfahren umfasst:einbringen eines Immersionsfluids (34) in den Spalt zwischen dem letzten optischen Element und dem Wafer mit Hilfe eines Immersionselements (22), das eine oder mehrere Gasdüsen (76) aufweist und dazu konfiguriert ist, einen Gasfluss bereitzustellen;gekennzeichnet durch:messen des Druckes des Immersionsfluids in dem Spalt (24) mit Hilfe eines Drucksensors (80); undsteuern der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) anhand des Druckes, der durch den Drucksensor (80) gemessen wurde, unter Einsatz eines mit dem Drucksensor gekoppelten Gassteuerungssystems (84).
- Verfahren nach Anspruch 7, bei dem der Gasfluss aus der einen oder den mehreren Gasdüsen (76) das Immersionsfluid (34) im wesentlichen in dem Spalt (24) hält.
- Verfahren nach Anspruch 7 oder 8, bei dem der Gasfluss aus der einen oder den mehreren Gasdüsen ein Luftlager erzeugt, das das Immersionselement (22) stützt.
- Verfahren nach einem der Ansprüche 7 bis 9, bei dem das Gassteuerungssystem (84) durch Steuerung der Geschwindigkeit des Gasflusses aus der einen oder den mehreren Gasdüsen (76) den Spalt (24) zwischen dem Immersionselement und dem Wafer einstellt.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US58051004P | 2004-06-17 | 2004-06-17 | |
PCT/US2004/042808 WO2006009573A1 (en) | 2004-06-17 | 2004-12-20 | Fluid pressure compensation for immersion lithography lens |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1756663A1 EP1756663A1 (de) | 2007-02-28 |
EP1756663A4 EP1756663A4 (de) | 2009-08-12 |
EP1756663B1 true EP1756663B1 (de) | 2015-12-16 |
Family
ID=35785538
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04814940.5A Not-in-force EP1756663B1 (de) | 2004-06-17 | 2004-12-20 | Fluiddruckkompensation für eine immersionslithographielinse |
Country Status (6)
Country | Link |
---|---|
US (2) | US7688421B2 (de) |
EP (1) | EP1756663B1 (de) |
JP (1) | JP4623095B2 (de) |
KR (1) | KR101259190B1 (de) |
HK (1) | HK1095388A1 (de) |
WO (1) | WO2006009573A1 (de) |
Families Citing this family (21)
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KR101238142B1 (ko) | 2003-04-10 | 2013-02-28 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
KR101364928B1 (ko) | 2003-04-10 | 2014-02-19 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
TWI606485B (zh) | 2004-03-25 | 2017-11-21 | 尼康股份有限公司 | 曝光裝置、曝光方法、及元件製造方法 |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4623095B2 (ja) * | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
US7944628B2 (en) * | 2005-03-09 | 2011-05-17 | Carl Zeiss Smt Gmbh | Optical element unit |
WO2006133800A1 (en) | 2005-06-14 | 2006-12-21 | Carl Zeiss Smt Ag | Lithography projection objective, and a method for correcting image defects of the same |
WO2007031182A1 (de) * | 2005-09-13 | 2007-03-22 | Carl Zeiss Smt Ag | Mikrolithographische projektionsbelichtungsanlage und verfahren zur einstellung einer optischen abbildungseigenschaft derselben |
US7649612B2 (en) * | 2006-01-27 | 2010-01-19 | Chartered Semiconductor Manufacturing Ltd. | Phase shifting photolithography system |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
DE102006023876A1 (de) * | 2006-05-19 | 2007-11-22 | Carl Zeiss Smt Ag | Optische Abbildungseinrichtung |
US8027023B2 (en) | 2006-05-19 | 2011-09-27 | Carl Zeiss Smt Gmbh | Optical imaging device and method for reducing dynamic fluctuations in pressure difference |
US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
EP2381310B1 (de) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Flüssigkeitshandhabungsstruktur und lithographischer Apparat |
WO2012144904A2 (en) | 2011-04-22 | 2012-10-26 | Mapper Lithography Ip B.V. | Position determination in a lithography system using a substrate having a partially reflective position mark |
TWI571707B (zh) | 2011-04-22 | 2017-02-21 | 瑪波微影Ip公司 | 用於處理諸如晶圓的標靶的微影系統,用於操作用於處理諸如晶圓的標靶的微影系統的方法,以及使用在此種微影系統的基板 |
JP5932023B2 (ja) * | 2011-05-13 | 2016-06-08 | マッパー・リソグラフィー・アイピー・ビー.ブイ. | ターゲットの少なくとも一部を処理するためのリソグラフィシステム |
JP6031292B2 (ja) * | 2012-07-31 | 2016-11-24 | 東京エレクトロン株式会社 | プローブカードへの基板当接方法 |
JP5993649B2 (ja) * | 2012-07-31 | 2016-09-14 | 東京エレクトロン株式会社 | プローブカードへの基板当接装置、基板当接装置を備えた基板検査装置、及びプローブカードへの基板当接方法 |
US10551746B2 (en) | 2015-11-20 | 2020-02-04 | Asml Netherlands B.V. | Lithographic apparatus and method |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
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JP4623095B2 (ja) * | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
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US7265813B2 (en) * | 2004-12-28 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-12-20 JP JP2007516457A patent/JP4623095B2/ja not_active Expired - Fee Related
- 2004-12-20 WO PCT/US2004/042808 patent/WO2006009573A1/en active Application Filing
- 2004-12-20 KR KR1020077001225A patent/KR101259190B1/ko active IP Right Grant
- 2004-12-20 US US11/628,942 patent/US7688421B2/en not_active Expired - Fee Related
- 2004-12-20 EP EP04814940.5A patent/EP1756663B1/de not_active Not-in-force
-
2007
- 2007-03-13 HK HK07102689.5A patent/HK1095388A1/xx not_active IP Right Cessation
-
2010
- 2010-02-12 US US12/656,703 patent/US20100149513A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US7688421B2 (en) | 2010-03-30 |
US20080316445A1 (en) | 2008-12-25 |
HK1095388A1 (en) | 2007-05-04 |
EP1756663A1 (de) | 2007-02-28 |
KR101259190B1 (ko) | 2013-04-29 |
WO2006009573A1 (en) | 2006-01-26 |
KR20070026824A (ko) | 2007-03-08 |
EP1756663A4 (de) | 2009-08-12 |
US20100149513A1 (en) | 2010-06-17 |
JP2008503088A (ja) | 2008-01-31 |
JP4623095B2 (ja) | 2011-02-02 |
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