EP1730483A2 - Kraftsensor mit organischen feldeffekttransistoren, darauf beruhender drucksensor, positionssensor und fingerabdrucksensor - Google Patents

Kraftsensor mit organischen feldeffekttransistoren, darauf beruhender drucksensor, positionssensor und fingerabdrucksensor

Info

Publication number
EP1730483A2
EP1730483A2 EP05700552A EP05700552A EP1730483A2 EP 1730483 A2 EP1730483 A2 EP 1730483A2 EP 05700552 A EP05700552 A EP 05700552A EP 05700552 A EP05700552 A EP 05700552A EP 1730483 A2 EP1730483 A2 EP 1730483A2
Authority
EP
European Patent Office
Prior art keywords
force
field effect
sensor
organic field
sensor according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05700552A
Other languages
German (de)
English (en)
French (fr)
Inventor
Hagen Klauk
Marcus Halik
Ute Zschieschang
Günter Schmid
Grzegorz Darlinski
Rainer Waser
Ralf Brederlow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Polaris Innovations Ltd
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1730483A2 publication Critical patent/EP1730483A2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1329—Protecting the fingerprint sensor against damage caused by the finger
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
    • G01L5/161—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using variations in ohmic resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L5/00—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes
    • G01L5/16—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force
    • G01L5/167—Apparatus for, or methods of, measuring force, work, mechanical power, or torque, specially adapted for specific purposes for measuring several components of force using piezoelectric means

Definitions

  • the invention relates to a force sensor with organic field effect transistors, a pressure sensor, a position sensor and a fingerprint sensor, all of which are based on organic field effect transistors.
  • WO 03 / 079,449 AI (compare in particular FIG. 5 with the associated description on pages 10 and 11) describes a force sensor which is also used as a fingerprint sensor and a two-dimensional position sensor.
  • the structure shown in FIG. 5 has a sensor array above a pixel array having a large number of LEDs.
  • the sensor array consists of a sensor between a transparent upper electrode layer which, for. B. consists of ITO and an underlying conductive barrier material and an insulating leveling layer inserted compressible layer made of dielectric or very high-resistance material.
  • the distance between the electrode layer and the conductive barrier material changes, so that a measurable change in capacitance over the dielectric material or a reduction in the resistance over the very high-resistance material occurs.
  • the first part of the problem is solved by a force sensor based on an organic field effect transistor applied to a substrate, in which a mechanical force acting on the transistor causes a change in its source-drain voltage or its source corresponding to this force -Drain current caused, which can be recorded as a measurement for the acting force.
  • the organic ⁇ field-effect transistor is preferably a penta-zen transistor which has an active layer of pentazene between a drain and a source electrode.
  • the force sensor according to the invention thus uses the reproducible, reversible dependence of the drain current of an organic field effect transistor on the mechanical force acting on the transistor. Since organic field effect transistors can be integrated particularly easily and inexpensively on any substrates, such organic field effect transistors are particularly well suited for the implementation of force sensors.
  • Force sensor is the electrical measurand the drain source voltage of the organic field effect transistor. At the time of measurement, a constant gate-source voltage and a constant drain current are applied to it and the drain source voltage is tapped as a measurement for the force acting.
  • resistive pressure sensors either on the evaluation of the resistance change in me based "-metallic conductor paths (resistance change due to the" change in the geometric cross section of the track) or on the piezo-zoresistiven effect in a semiconductor structural ur.
  • piezoresistive pressure sensors are only suitable for measuring pressures in gaseous and liquid media, since direct contact with a solid object would destroy the extremely thin silicon membrane.
  • the pressure sensor according to the invention uses the reproducible, reversible dependence of the threshold voltage of organic field effect transistors on the bending state of the substrate.
  • the invention thus proposes an integrated pressure sensor based on a deformable membrane, in which the pressure change is based on the measurable change in the threshold voltage of one or more, which is dependent on the bending state of the membrane is based on the membrane of integrated organic field effect transistors (the threshold voltage is defined as the input voltage of the transistor at which the output current of the transistor increases suddenly due to the accumulation of a charge carrier channel).
  • Another application according to the invention of the force sensor according to the invention is a one- or two-dimensional position sensor for measuring the position of a mechanical force along a line or within a surface using a large number of force sensors according to the invention, each based on an organic field effect transistor, which are at regular intervals from one another Form a one-dimensional or two-dimensional matrix are arranged on a common substrate.
  • a predetermined number of force sensors which are generally based either on the resistive or the capacitive principle of action, have been arranged along a line or within a two-dimensional area.
  • the force exerted forces a film coated with an electrically conductive polymer against a metal contact structure, so that the electrical resistance measured between the metal contacts is measurably reduced. Due to the properties of the polymer layer the change in resistance over a relatively wide range depends proportionally on the mechanical force acting.
  • the acting force compresses an insulator layer located between two electrically conductive surfaces, the capacity of the arrangement increasing. However, the change in capacity is quite small.
  • the measurement data are recorded line by line by selecting all organic field effect transistors within a line by applying a corresponding gate-source voltage by means of a line decoder.
  • the gate-source voltage is selected so that the transistors in this row are switched on;
  • all other rows of the matrix are deselected by applying a corresponding gate-source voltage from the row decoder, so that the transistors in these rows are blocked and make no contribution to the measurement current.
  • the de-select voltage is selected so that the transistors block.
  • the measurement voltages dependent on the mechanical force acting on them that is to say the drain-source voltages of the individual transistors within the selected row, are recorded after activation of the constant current sources by a control and measurement unit connected to the columns of the matrix.
  • a further application of the force sensor according to the invention is a fingerprint sensor according to the invention, which shows the reproducible, reversible dependence of the drain current of organic field effect transistors arranged in a matrix uses the mechanical force acting on these transistors.
  • the fingerprint is usually identified by touching the fingertip with a two-dimensional arrangement (matrix) of individual sensors, with the aid of which the microscopic topography of the group of fingers is recorded point by point.
  • each of the individual sensors converts the characteristic physical variable (mechanical pressure or electrical conductivity) into an electrical variable, voltage, current or capacity that can be detected by the system, so that the electronic detection and evaluation of the the measurement results provided by the individual sensors is made possible.
  • Capacitive, piezoelectric or resistance effects are used to convert the physical to an electrical variable.
  • an inexpensive pressure sensor which is based on organic field-effect transistors.
  • this fingerprint sensor adequate resistance to aggressive substances, in particular human sweat, can be ensured by a suitable choice of protective layers.
  • the sensor system of the fingerprint sensor according to the invention essentially consists of a two-dimensional matrix organic field effect transistors with control and measuring unit and line decoder, as has already been described for a two-dimensional position sensor.
  • the protection of the sensor field against environmental contamination which is mainly caused by human sweat and which affects the longevity of such a sensor, is carried out by applying a one or two-layer protective layer on the sensor field.
  • Fig. 1 shows schematically in cross section a pentacene transistor, which preferably serves as an organic field effect transistor used in the invention
  • FIG. 2A and 2B show two alternative circuit variants which use the reproducible, reversible dependence of the drain current of a pentazen transistor according to FIG. 1 on the mechanical force acting on the transistor to generate an electrical measurement signal;
  • FIG. 4 graphically the difference between low and high states and the percentage change in the drain current as a function of the gate-source voltage
  • FIG. 5 schematically shows an application of the force sensor according to the invention as a membrane-based pressure sensor
  • FIG. 8 schematically shows a circuit arrangement of a two-dimensional position sensor using a flat matrix of a plurality of force sensors according to the invention
  • This invention describes a force sensor in which the force conversion is based on the measurable change in the drain current of an organic field effect transistor which is dependent on the magnitude of the force acting.
  • these transistors depend the drain current also depends on the mechanical force acting on the transistor. Since organic transistors can be integrated particularly easily and inexpensively on any substrates, they are particularly well suited for the implementation of force sensors.
  • a wide range of materials can be used for the material of the substrate, such as glass, ceramic, plastic, polymer film, metal foil and paper.
  • the polymer films are polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyimide (PI), polycarbonate, polyethylene ether ketone (PEEK). Thanks to this wide range of substrate materials, force sensors can be easily implemented, in particular for the various applications described below and for different measuring ranges, based on the same basic structure.
  • 2A and 2B show two circuit variants for force sensor elements based on organic transistors.
  • 2A shows a circuit arrangement for controlling the sensor, in particular the pentacene transistor 10 shown in FIG. 1, via a constant current source I Tavern and the measurement of the drain-source voltage of the transistor as a measurement variable V me ⁇ S - with constant drain current I assert and more constant
  • Gate-source voltage V tax depends on the measured voltage V mess only on the mechanical force acting and allows so it is a determination of the force acting on the pentacene transistor.
  • this mechanical force can act, for example, from above on the passivation layer 6 or via deformation, for example bending of the substrate 1 carrying the pentacene transistor.
  • FIG. 3 shows graphically measured values of the drain current I D (in amperes), which corresponds to the measurement variable I mess from the gate-source voltage V G s measured in volts, namely in solid lines in the depressurized state, that is, when no force acts on the force sensor and in broken lines when a mechanical force is exerted on the force sensor by means of a pin which can be lowered in a controlled manner.
  • the drain-source voltage V DS was constantly equal to 20 V.
  • FIG. 5 shows a pressure sensor arrangement in which the substrate 1 according to FIG. 1 is designed as a flexible membrane 11 which is firmly clamped on its outer edge and can be deflected upwards and downwards in its central regions.
  • a pressure P meSs to be measured acts from below and a reference pressure P ref from above acts on the membrane 11 and thus on the pentacene transistor 10 serving as a pressure sensor.
  • FIG. 6 graphically shows measurement results for the drain current I D in picoampers as a function of the percentage transistor expansion in the case of a pentazene transistor 10 integrated on a PEN membrane according to FIG. 5.
  • the basis for such a fingerprint sensor designed as a pressure sensor is a two-dimensional sensor field, as has been described above with reference to FIG. 8.
  • the measurement data is acquired line by line by selecting all transistors within a line by applying a corresponding gate-source voltage via the line decoder 21, the selection voltage of which is selected such that the transistors in this line are switched on.
  • the row decoder switches off on other rows of the matrix by applying a corresponding gate-source voltage, that is to say it deselects these rows, so that the transistors in these rows are blocked and make no contribution to the measurement current.
  • the measurement voltages dependent on the mechanical force acting on them that is to say the drain-source voltages of the pentacene transistors within the selected line, are detected by the control and measurement unit 20 after activation of the constant current sources I tax .
  • the second (upper) protective layer 31 in the case shown in FIG. Example 100 a hydrophilic polymer layer, preferably polyvinyl alcohol (PVA).
  • PVA polyvinyl alcohol
  • the function of the second protective layer is to act as a diffusion barrier against fat-loving (lipophilic) ingredients, such as talc, protein residues or generally organic ingredients.
  • the second exemplary embodiment 101 of a finger pressure sensor using a pentacene transistor 10 the order of the protective layers is interchanged, since both paraffin and PVA can be deposited on the surface of the transistors without problems without damaging the sensitive organic semiconductor layer 5 becomes.
  • FIG. 11 shows a third exemplary embodiment 102 of a sweat-resistant fingerprint sensor using a pentacene transistor 10, in which a perfluorinated material is used as protective layer 32. This type of material makes it possible to use only one protective layer 32, since layers of perfluorinated compounds, such as perfluorohexadecane, are diffusion barriers for both hydrophobic and hydrophilic compounds.
  • all perfluorinated n-alkane derivatives for example perfluorotetradecane, melting point 103 to 104 ° C; perfluorohexadecane, melting point 125-126 ° C
  • perfluorinated protective layer 32 at room temperature solid, inert, non-aromatic perfluorinated hydrocarbons that can be vaporized without decomposition (for example perfluoromethyldecalin, melting point 59 ° C).
  • the separation takes place from the gas phase at reduced pressure (depending on volatility 10 "1 to 10 ⁇ 4

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Pressure Sensors (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Measuring Fluid Pressure (AREA)
  • Image Input (AREA)
  • Thin Film Transistor (AREA)
EP05700552A 2004-04-01 2005-03-30 Kraftsensor mit organischen feldeffekttransistoren, darauf beruhender drucksensor, positionssensor und fingerabdrucksensor Withdrawn EP1730483A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004016155A DE102004016155B3 (de) 2004-04-01 2004-04-01 Kraftsensor mit organischen Feldeffekttransistoren, darauf beruhender Drucksensor, Positionssensor und Fingerabdrucksensor
PCT/DE2005/000559 WO2005096348A2 (de) 2004-04-01 2005-03-30 Kraftsensor mit organischen feldeffekttransistoren, darauf beruhender drucksensor, positionssensor und fingerabdrucksensor

Publications (1)

Publication Number Publication Date
EP1730483A2 true EP1730483A2 (de) 2006-12-13

Family

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EP05700552A Withdrawn EP1730483A2 (de) 2004-04-01 2005-03-30 Kraftsensor mit organischen feldeffekttransistoren, darauf beruhender drucksensor, positionssensor und fingerabdrucksensor

Country Status (7)

Country Link
US (1) US20090066345A1 (ko)
EP (1) EP1730483A2 (ko)
JP (1) JP2007530957A (ko)
KR (1) KR20070004812A (ko)
CN (1) CN100433042C (ko)
DE (1) DE102004016155B3 (ko)
WO (1) WO2005096348A2 (ko)

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KR20070004812A (ko) 2007-01-09
DE102004016155B3 (de) 2006-05-24
CN1985263A (zh) 2007-06-20
JP2007530957A (ja) 2007-11-01
WO2005096348A3 (de) 2005-12-08
CN100433042C (zh) 2008-11-12
WO2005096348A2 (de) 2005-10-13
US20090066345A1 (en) 2009-03-12

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