EP1710829A1 - Magnetanordnung für ein Planar-Magnetron - Google Patents

Magnetanordnung für ein Planar-Magnetron Download PDF

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Publication number
EP1710829A1
EP1710829A1 EP05007339A EP05007339A EP1710829A1 EP 1710829 A1 EP1710829 A1 EP 1710829A1 EP 05007339 A EP05007339 A EP 05007339A EP 05007339 A EP05007339 A EP 05007339A EP 1710829 A1 EP1710829 A1 EP 1710829A1
Authority
EP
European Patent Office
Prior art keywords
arms
magnet arrangement
arrangement according
target
longitudinal axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP05007339A
Other languages
German (de)
English (en)
French (fr)
Inventor
Thomas Deppisch
Andreas Lopp
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials GmbH and Co KG
Original Assignee
Applied Materials GmbH and Co KG
Applied Films GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials GmbH and Co KG, Applied Films GmbH and Co KG filed Critical Applied Materials GmbH and Co KG
Priority to EP05007339A priority Critical patent/EP1710829A1/de
Priority to US11/385,042 priority patent/US7531071B2/en
Priority to TW095109529A priority patent/TWI293993B/zh
Priority to CNB2006100669069A priority patent/CN100569995C/zh
Priority to JP2006103165A priority patent/JP2006291357A/ja
Priority to KR1020060031169A priority patent/KR100749969B1/ko
Publication of EP1710829A1 publication Critical patent/EP1710829A1/de
Priority to US11/985,877 priority patent/US20080067062A1/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/081—Magnetic constructions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Definitions

  • the invention relates to a magnet arrangement according to the preambles of claims 1 and 7.
  • a plasma is generated in a sputtering chamber under vacuum.
  • a plasma is understood to mean a quasi-neutral many-body system in the form of gaseous mixtures of free electrons and ions and possibly neutral particles, ie. H. Atoms, molecules or radicals.
  • Positive ions of the plasma are attracted by the negative potential of a cathode which is provided with a so-called target. On this target, the positive ions strike and knock out small particles that can precipitate on a substrate. The knocking out of these particles is called "sputtering" or sputtering.
  • the plasma contains ionized gases which, in a non-reactive sputtering noble gases, eg. As argon, can be. In reactive sputtering z. As oxygen alone or used together with a noble gas.
  • the ions required for the sputtering process are generated by collisions of gas atoms and electrons in a glow discharge and accelerated by means of an electric field into the target forming the cathode.
  • magnets are used in the vicinity of the target whose magnetic field keeps the plasma at the target.
  • the charge carriers in the plasma essentially no longer move parallel to the electric field, but also transversely thereto, resulting in cycloid-shaped electron paths.
  • the deflection radii of the electrons are much smaller than those of the ions due to their low mass, the electrons concentrate in front of the target surface. This results in a much higher probability of ionizing sputtering gas atoms by collisions by means of electrons. Because of the ExB drift of the electrons - the electrons follow a path called the racetrack - and the concentration of the plasma in front of the target surface, the electrons no longer fly directly to the substrate, thus reducing the heating of the substrate.
  • the plasma is densest here and therefore the target is eroded the most here.
  • the glow discharge plasma is effectively confined by the magnetic field, and the orbital lengths of the Electrodes are elongated by the electrons making rotational motions around the magnetic field lines as an axis, thereby increasing the rate of collision between gas atoms and electrons.
  • Planar magnetrons are typically used to coat large areas. However, these have a low target utilization, for example of 40% or less.
  • rotating cylinder magnetrons are increasingly used which have a target utilization of 90% or more.
  • both cylinder magnetrons which are sometimes called tube cathodes, and planar magnetrons
  • the tube cathodes are sputtered less at the edges, where even backcoats can form.
  • the planar magnetrons form so-called racetracks, i. H. Erosion depressions, which are indirectly caused by the arrangement of the magnets in the magnetrons. Immediately these erosion pits are created by the incident ionized gas particles. These fall locally unevenly on the target, which acts as a negative electrode or cathode and serves as an atomizer.
  • a plasma racetrack corresponding to the magnet configuration is present in the stationary state even with a tube magnetron, no groove-shaped depression is formed in the rotating target.
  • the Cross Corner is the diagonally opposite corners of a rectangular magnetron.
  • the magnetic field in an end region of the magnetron cathode differs from the magnetic field in the central region, e.g. B. weaker
  • the electrons drift faster in this end region than in the middle, ie they reach very quickly in the cross-corner region.
  • an electron congestion occurs, which causes a denser ionization and thus in turn has an increased erosion of the target result (see.
  • QH Fan. LQ Zhou and JJ Gracio A cross-corner effect in a rectangular sputtering magnetron, J. Phys. D: Appl. Phys. 36 (2003), 244-251 ).
  • a magnetron sputtering apparatus is already known in which double T-shaped magnets of a first polarity of rectangular frame magnets of a second polarity are surrounded ( US 5,458,759 ).
  • the arrangement of the magnets is used to achieve the most uniform wear of the target.
  • Another known method also assumes that the arrangement of the magnets is the cause of the erosions on the target ( DE 197 01 575 A1 ). It is proposed to convey a substrate in a direction perpendicular to the longitudinal direction of the cathode, the magnets of the cathode being arranged to form two closed loops of a sputtering erosion surface region and reciprocated in a direction perpendicular to the longitudinal direction of the cathode.
  • a sputtering device which has meandering magnets ( EP 0 105 407 , Fig. 5). In this way it is achieved that a predetermined plasma atomization region is present in the form of a tortuous electron orbit, which ensures a relatively uniform utilization of a target.
  • this known sputtering device there is no relative movement of the target and the magnet system. As a result, a back coating between the individual meander loops occur and the target - which is larger than the substrate - is not sputterable over the entire surface.
  • an inner magnetic south pole which has a central beam from which equi-spaced tongues extend at right angles to the outside (EP 0 242 826 B1 ).
  • the outer magnet north pole consists of a rectangular frame, from whose two longitudinal sides rectangular tongues extend inwards, which are each arranged so that they lie between two tongues of the south pole. This results in a meandering magnetic field and thus a meandering erosion zone. Even with this sputtering cathode, there is no relative movement between the target and the magnet system.
  • the invention has for its object to optimally exploit large-area targets by a suitable management of erosion tubes and to keep the target surface as possible redepositionslitis.
  • the invention thus relates to a magnet arrangement for a planar magnetron, in which a first magnetic pole encloses a second magnetic pole.
  • This magnet arrangement is moved linearly in the longitudinal direction to a target by a certain amount and then moved back in the opposite direction by the same amount.
  • the magnet arrangement is designed so that the north and south pole interlock so that wave-shaped racetracks form. This makes it possible to evenly sputter from the entire target surface.
  • the advantage achieved with the invention is, in particular, that even large-area and even targets can be swept with only one erosion hose so that more than 50% of their surface are covered by the erosion hoses.
  • the relative movement between the target and the magnet system results in a homogeneous erosion profile.
  • the slight meshing of opposing magnetic pole elements is also sputtered in the center of the target.
  • long, wide targets can even be covered with only one racetrack or erosion tube. Since the two poles of the magnet arrangement hereby slightly intermesh in the middle, it is possible to achieve high target utilization and an almost completely backcoating-free target surface with only one linear movement.
  • the north and south poles are arranged so relative to each other that arise on the target meandering racetracks.
  • Two mutually opposite meanders lie so close to each other that the target surface is sputtered evenly in a linear movement in the direction of the target length.
  • the movement stroke is ⁇ half the edge distance.
  • FIG. 1 shows a partial representation of a first magnet configuration 1 according to the invention, with which a uniform utilization of a target is made possible. However, movements in two different directions of movement are still necessary. On the one hand, the magnet system has to be moved along the length of the target, and on the other hand, an additional movement over the target width is required, in order not to receive back coating in the middle.
  • the illustrated in Fig. 1 magnetic configuration 1 is continued on the right - not shown - side mirror image.
  • the magnetic south pole of the magnet configuration consists of a transverse web 2, adjoined by arms 3 to 8 arranged parallel to one another and standing perpendicularly on the web 2.
  • two further arms 9, 10 of the magnetic south pole are provided, whose longitudinal axis is arranged at an angle ⁇ to the longitudinal axis of the transverse web 2.
  • the angle ⁇ is about 60 °.
  • the Poor 9, 10 correspond, but are not inclined to the left, but to the right. These located on the right side arms are therefore arranged mirror-symmetrically to the arms 9, 10.
  • the north pole of the magnet configuration 1 is placed in the shape of a frame around the south pole, wherein an upper and a lower frame section 11, 12 as well as a left lateral frame section 13 can be seen.
  • the right side frame portion corresponding to the portion 13 is not shown.
  • an arm 16 is provided, which is opposite to the left end of the web 2. Accordingly, an arm is provided on the right side, which corresponds to the arm 16.
  • North and south pole of the magnetic configuration 1 are connected on their back with a yoke plate 17, 18.
  • the line 20 indicates the erosion trace that arises on the back of a target, which is not shown in FIG. 1.
  • the erosion track or racetrack 20 forms in static operation, ie. H. if the magnet configuration 1 and the target do not move relative to each other, a single meander. So that the target is optimally utilized, the magnet yoke 17, 18 with the magnet configuration 1 has to be moved over the target length in order to average out the meander. In addition, a movement over the target width is necessary so that no back coating occurs in the middle of the target.
  • the arrangement of the magnets 9, 10, 16 serves to eliminate or reduce the cross-corner effect. After a longer straight racetrack track, cross corner effects can develop after a subsequent turn. On a straight-lined racetrack alone, no cross-corner effects are formed. These occur only at two opposite points of the target, where the electrons from the curve meet again in a straight position (see Fig. 7B in DE 197 01 575 A1 ). In the present invention, however, the racetrack is not a longer straight line, but always curved. If one leaves the magnetic arm 16 and sets the magnets 9 and 10 straight, so in this case over the target width of the racetrack briefly straight and it is to be expected with a cross-corner effect.
  • FIG. 2 shows a second magnet configuration 30, in which only one movement along the target length is required. A movement in target width can be omitted. The movement of the magnet configuration 30 takes place linearly over the length of a target. At the end of the target, a reversal of motion occurs.
  • the one pole of the magnet configuration 30, z. B. the south pole in this case has equidistant upper arms 31 to 35 and equidistant lower arms 36 to 40.
  • the longitudinal axis of the lower arms 36-40 are parallel to the longitudinal axis of the upper arms 31-35, but are laterally displaced so as to pass through a point marking the center between the longitudinal axis of the upper arms 31-35.
  • the respectively inwardly directed ends of the arms 31 to 35 and 36 to 40 terminate with a rectangular block 41 to 45 and 46 to 50, to which connect connecting elements 51 to 59, which connects between the blocks 41 to 45 and make the blocks 46 to 50.
  • These connecting elements 51 to 59 are arranged at an angle ⁇ to the longitudinal axis of the arms 31 to 35 or 36 to 40.
  • the other pole, z. B. the north pole of the magnet configuration 30 is formed by a plurality of hood-shaped partial magnets, each comprising an arm 31 to 35 or 36 to 40 of the South Pole.
  • These partial magnets each have two legs 61, 62 and 63, 64 and 65, 66 and 67, 68 and 69, 70, which extend obliquely to the central axis of the arms 31 to 35 and 36 to 40, whose upper ends overlap a block 71 or 72 or 73 or 74 or 75 are connected to each other, whose longitudinal axis extends horizontally.
  • the lower ends of the legs 61 to 70 are also in communication with blocks 125 to 130 whose longitudinal axis is vertical.
  • the legs 80 to 88 in this case abut with their ends to blocks 90 to 94 and 100 to 104.
  • the first-mentioned blocks 90 to 94 are thereby aligned vertically, while the latter blocks 100 to 104 are aligned horizontally.
  • the static state, d. H. Racetrack forming without relative movement between magnet configuration 30 and target is denoted by 105 and forms two superimposed wave curves which are sinusoidal-like.
  • FIG. 2 shows the position of the zero crossing of the vertical component of the magnetic field on the target surface.
  • the direction in which the magnet configuration 30 is moved relative to a target is indicated by a double arrow 111. This indicates that the movement takes place only in the longitudinal direction of the target, once to the right and then to the left, etc.
  • the stroke length is ⁇ half the meander distance.
  • Meander distance is here understood to mean the distance from top to bottom of a sinusoidal wavy line 105.
  • the size of the double arrow 111 corresponds approximately to the meander distance.
  • a backcoating area is formed at the top and bottom of the target. This backcoating area is undesirable and can be reduced, for example, by targets with the shape of a parallelogram. But it can also be reduced by skewing the meander.
  • a magnet configuration 120 in which the meanders are skewed is shown in FIG. Since the number of magnetic elements and their basic arrangement is the same as that shown in Fig. 2, these magnetic elements are provided with the same reference numerals as in Fig. 2.
  • the arms 31 to 40 are thereby inclined by an angle ⁇ with respect to the vertical.
  • two sinusoidal wave curves arranged one above the other result as racetrack 121.
  • the slanting of the meanders makes it possible to reduce the back coating at the two ends of the target.
  • the magnet configuration 120 of FIG. 3 is moved relative to the target in the same manner as the magnet configuration 30 of FIG. 2.
  • FIG. 4 shows a schematic representation of an arrangement which, in addition to the magnet configuration 1, also contains a target 77 and a substrate 78.
  • the magnet configuration is the same as in Fig. 1, which is why the individual magnetic parts are also provided with the same reference numerals.
  • Target 77 and substrate 78 are arranged stationary in a sputtering chamber, not shown.
  • the magnet configuration 1 with the yoke 17, 18, however, is movable below the target 77 in the direction of the arrows 97, 98.
  • a support plate 113 is provided, which is guided at their ends in rails 114, 115 and connected to a drive, not shown.
  • a carriage 116 is arranged, which carries the magnetic configuration 1 via a column 117. Since the carriage 116 is movable in the direction of the arrow 98, the magnet configuration 1 can be displaced arbitrarily relative to the target 77.
  • the targets are longer than the magnet assembly because the magnets are moved over the target length.
  • the target width is smaller than the width of the magnet assembly. The size of the target is determined by the size and shape of the racetrack and the motion.

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
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EP05007339A 2005-04-05 2005-04-05 Magnetanordnung für ein Planar-Magnetron Withdrawn EP1710829A1 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP05007339A EP1710829A1 (de) 2005-04-05 2005-04-05 Magnetanordnung für ein Planar-Magnetron
US11/385,042 US7531071B2 (en) 2005-04-05 2006-03-20 Magnet arrangement for a planar magnetron
TW095109529A TWI293993B (en) 2005-04-05 2006-03-21 Magnet arrangement for a planar magnetron
CNB2006100669069A CN100569995C (zh) 2005-04-05 2006-03-30 用于平面磁控管的磁体装置
JP2006103165A JP2006291357A (ja) 2005-04-05 2006-04-04 平面マグネトロン用マグネット装置
KR1020060031169A KR100749969B1 (ko) 2005-04-05 2006-04-05 평면 마그네트론을 위한 자석 구조
US11/985,877 US20080067062A1 (en) 2005-04-05 2007-11-16 Magnet arrangement for a planar magnetron background and summary of the invention

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP05007339A EP1710829A1 (de) 2005-04-05 2005-04-05 Magnetanordnung für ein Planar-Magnetron

Publications (1)

Publication Number Publication Date
EP1710829A1 true EP1710829A1 (de) 2006-10-11

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EP05007339A Withdrawn EP1710829A1 (de) 2005-04-05 2005-04-05 Magnetanordnung für ein Planar-Magnetron

Country Status (6)

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US (2) US7531071B2 (zh)
EP (1) EP1710829A1 (zh)
JP (1) JP2006291357A (zh)
KR (1) KR100749969B1 (zh)
CN (1) CN100569995C (zh)
TW (1) TWI293993B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
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KR100749969B1 (ko) 2005-04-05 2007-08-16 어플라이드 매터리얼스 게엠베하 운트 컴퍼니 카게 평면 마그네트론을 위한 자석 구조
WO2019110288A1 (en) * 2017-12-05 2019-06-13 Oerlikon Surface Solutions Ag, Pfäffikon Magnetron sputtering source and coating system arrangement

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WO2009057715A1 (ja) * 2007-10-31 2009-05-07 Canon Anelva Corporation マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法
CN101545094B (zh) * 2008-03-28 2013-02-20 应用材料公司 具有辅助边缘磁体的矩形磁控管
KR101353411B1 (ko) * 2008-08-18 2014-01-21 캐논 아네르바 가부시키가이샤 자석 유닛, 및 마그네트론 스퍼터링 장치
CN101805889B (zh) 2009-02-13 2012-01-11 北京京东方光电科技有限公司 磁靶及具有该磁靶的磁控溅射设备
CN101877300B (zh) * 2009-04-30 2012-01-04 深圳市豪威薄膜技术有限公司 溅射磁控管装置
JP5730077B2 (ja) * 2010-06-03 2015-06-03 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
JP5873276B2 (ja) 2010-12-27 2016-03-01 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
CN109844900A (zh) * 2016-10-11 2019-06-04 应用材料公司 用于溅射沉积源和磁控溅射沉积源的磁体布置
GB2562128B (en) * 2017-09-29 2020-08-05 Camvac Ltd Apparatus and Method for Processing, Coating or Curing a Substrate
JP2021001382A (ja) * 2019-06-24 2021-01-07 株式会社アルバック マグネトロンスパッタリング装置用のカソードユニット
CN116092899B (zh) * 2023-01-16 2024-01-09 深圳市矩阵多元科技有限公司 用于pvd平面靶的扫描磁控管装置与磁控溅射设备

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US5026471A (en) * 1989-09-07 1991-06-25 Leybold Aktiengesellschaft Device for coating a substrate
US5182003A (en) * 1990-12-07 1993-01-26 Leybold Aktiengesellschaft Stationary magnetron sputtering cathode for a vacuum coating apparatus
EP0820088A2 (en) * 1996-07-19 1998-01-21 Applied Komatsu Technology, Inc. Non-planar magnet tracking device for magnetron sputtering apparatus

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100749969B1 (ko) 2005-04-05 2007-08-16 어플라이드 매터리얼스 게엠베하 운트 컴퍼니 카게 평면 마그네트론을 위한 자석 구조
WO2019110288A1 (en) * 2017-12-05 2019-06-13 Oerlikon Surface Solutions Ag, Pfäffikon Magnetron sputtering source and coating system arrangement
US11594402B2 (en) 2017-12-05 2023-02-28 Oerlikon Surface Solutions Ag, Pfaffikon Magnetron sputtering source and coating system arrangement

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Publication number Publication date
TWI293993B (en) 2008-03-01
KR20060107358A (ko) 2006-10-13
CN100569995C (zh) 2009-12-16
KR100749969B1 (ko) 2007-08-16
US20080067062A1 (en) 2008-03-20
US20060219550A1 (en) 2006-10-05
TW200639267A (en) 2006-11-16
JP2006291357A (ja) 2006-10-26
US7531071B2 (en) 2009-05-12
CN1861836A (zh) 2006-11-15

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