WO2009057715A1 - マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法 - Google Patents

マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法 Download PDF

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Publication number
WO2009057715A1
WO2009057715A1 PCT/JP2008/069799 JP2008069799W WO2009057715A1 WO 2009057715 A1 WO2009057715 A1 WO 2009057715A1 JP 2008069799 W JP2008069799 W JP 2008069799W WO 2009057715 A1 WO2009057715 A1 WO 2009057715A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnet
magnetron
electronic device
polarity
sputtering apparatus
Prior art date
Application number
PCT/JP2008/069799
Other languages
English (en)
French (fr)
Inventor
Tetsuya Endo
Einstein Noel Abarra
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Priority to EP08843409A priority Critical patent/EP2204469A4/en
Priority to JP2009506456A priority patent/JP4314318B2/ja
Priority to CN2008800028071A priority patent/CN101595240B/zh
Publication of WO2009057715A1 publication Critical patent/WO2009057715A1/ja
Priority to US12/477,510 priority patent/US7785449B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　マグネトロンユニットは、磁性体からなるヨーク板の両端部に設けられた同じ極性の第１の磁石と、ヨーク板の中央部に設けられ第１の磁石とは極性が異なる第２の磁石と、からなる複数の第１のマグネットエレメントと、複数の第１のマグネットエレメントの各々が一方向に移動できるように移動部が配置されたベースプレートと、ベースプレートの両端部にそれぞれ固定された磁性体からなるヨーク板と、ヨーク板上に配置され第２の磁石と同じ極性の磁石と、磁石の上に配置され第１の磁石と同じ極性の磁石と、からなる第２のマグネットエレメントと、を有する。
PCT/JP2008/069799 2007-10-31 2008-10-30 マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法 WO2009057715A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08843409A EP2204469A4 (en) 2007-10-31 2008-10-30 MAGNETRON, CATHODE MAGNETRON SPRAY APPARATUS AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
JP2009506456A JP4314318B2 (ja) 2007-10-31 2008-10-30 マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法
CN2008800028071A CN101595240B (zh) 2007-10-31 2008-10-30 磁控管单元、磁控管溅射设备和制造电子器件的方法
US12/477,510 US7785449B2 (en) 2007-10-31 2009-06-03 Magnetron unit, magnetron sputtering apparatus, and method of manufacturing electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-283438 2007-10-31
JP2007283438 2007-10-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/477,510 Continuation US7785449B2 (en) 2007-10-31 2009-06-03 Magnetron unit, magnetron sputtering apparatus, and method of manufacturing electronic device

Publications (1)

Publication Number Publication Date
WO2009057715A1 true WO2009057715A1 (ja) 2009-05-07

Family

ID=40591099

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069799 WO2009057715A1 (ja) 2007-10-31 2008-10-30 マグネトロンユニット、マグネトロンスパッタリング装置及び電子デバイスの製造方法

Country Status (5)

Country Link
US (1) US7785449B2 (ja)
EP (1) EP2204469A4 (ja)
JP (2) JP4314318B2 (ja)
CN (1) CN101595240B (ja)
WO (1) WO2009057715A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110024290A1 (en) * 2009-07-30 2011-02-03 Hon Hai Precision Industry Co., Ltd. Magnetic device and magnetron sputtering device using the same
JP2012186057A (ja) * 2011-03-07 2012-09-27 Kobe Steel Ltd プラズマ源及びこのプラズマ源を備えた成膜装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009060539A1 (ja) * 2007-11-09 2009-05-14 Canon Anelva Corporation インライン型ウェハ搬送装置
JP4551490B2 (ja) * 2008-08-18 2010-09-29 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
EP2159304A1 (en) * 2008-08-27 2010-03-03 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Apparatus and method for atomic layer deposition
JP5390330B2 (ja) * 2008-10-16 2014-01-15 キヤノンアネルバ株式会社 基板処理装置およびそのクリーニング方法
JP2010106349A (ja) * 2008-10-31 2010-05-13 Canon Anelva Corp スパッタ装置、薄膜形成装置及び磁気記録媒体の製造方法
JP5336151B2 (ja) * 2008-10-31 2013-11-06 キヤノンアネルバ株式会社 薄膜形成装置及び磁気記録媒体の製造方法
CN101842512A (zh) * 2008-12-24 2010-09-22 佳能安内华股份有限公司 溅射设备和成膜方法
WO2010073330A1 (ja) 2008-12-25 2010-07-01 キヤノンアネルバ株式会社 スパッタリング装置
US8776542B2 (en) * 2009-12-25 2014-07-15 Canon Anelva Corporation Cooling system
TWI456082B (zh) * 2010-03-26 2014-10-11 Univ Nat Sun Yat Sen 磁控式電漿濺鍍機
JP5873276B2 (ja) 2010-12-27 2016-03-01 キヤノンアネルバ株式会社 磁石ユニットおよびマグネトロンスパッタリング装置
KR20140109427A (ko) 2012-01-30 2014-09-15 미쓰비시덴키 가부시키가이샤 자기회로
CN104357803B (zh) * 2014-11-20 2017-02-22 昆山国显光电有限公司 磁控溅射磁铁系统及其控制方法和磁控溅射装置
JP6313250B2 (ja) * 2015-03-11 2018-04-18 東芝メモリ株式会社 半導体製造装置
US11073912B2 (en) * 2016-07-07 2021-07-27 Sekisui Polymatech Co., Ltd. Magnetic deformable member
CN112272858A (zh) * 2018-06-08 2021-01-26 科诺西斯泰克有限责任公司 用于通过阴极溅射技术来沉积材料的机器

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137965U (ja) * 1983-03-03 1984-09-14 日本真空技術株式会社 マグネトロン型スパツタカソ−ド
JPH0375369A (ja) 1989-08-18 1991-03-29 Fuji Photo Film Co Ltd スパッタリング装置
JPH0375368A (ja) * 1989-08-18 1991-03-29 Fuji Photo Film Co Ltd スパッタリング装置
JPH05148639A (ja) * 1991-11-22 1993-06-15 Anelva Corp マグネトロンカソード電極
JPH09118980A (ja) 1995-10-24 1997-05-06 Fujitsu Ltd スパッタリング装置用のマグネトロンユニット及びスパッタリング装置
JPH1025572A (ja) * 1996-07-11 1998-01-27 Hitachi Ltd マグネトロンスパッタ装置
JP2000212739A (ja) * 1999-01-27 2000-08-02 Sharp Corp マグネトロンスパッタ装置
JP2007131895A (ja) * 2005-11-09 2007-05-31 Ulvac Japan Ltd マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置
JP2007283438A (ja) 2006-04-17 2007-11-01 Ntt Electornics Corp ブラスト加工方法

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JPS59137965A (ja) 1983-01-28 1984-08-08 Canon Inc 像形成装置
JPH0726202A (ja) 1993-07-14 1995-01-27 Dainippon Ink & Chem Inc 水性塗料用樹脂組成物
US5980707A (en) * 1998-12-18 1999-11-09 Sierra Applied Sciences, Inc. Apparatus and method for a magnetron cathode with moving magnet assembly
DE60105856T2 (de) * 2001-03-27 2005-10-20 Fundación Tekniker Bogenverdampfer mit intensiver magnetführung für grossflächige targets
US8778144B2 (en) * 2004-09-28 2014-07-15 Oerlikon Advanced Technologies Ag Method for manufacturing magnetron coated substrates and magnetron sputter source
EP1710829A1 (de) * 2005-04-05 2006-10-11 Applied Films GmbH & Co. KG Magnetanordnung für ein Planar-Magnetron
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59137965U (ja) * 1983-03-03 1984-09-14 日本真空技術株式会社 マグネトロン型スパツタカソ−ド
JPH0375369A (ja) 1989-08-18 1991-03-29 Fuji Photo Film Co Ltd スパッタリング装置
JPH0375368A (ja) * 1989-08-18 1991-03-29 Fuji Photo Film Co Ltd スパッタリング装置
JPH05148639A (ja) * 1991-11-22 1993-06-15 Anelva Corp マグネトロンカソード電極
JPH09118980A (ja) 1995-10-24 1997-05-06 Fujitsu Ltd スパッタリング装置用のマグネトロンユニット及びスパッタリング装置
JPH1025572A (ja) * 1996-07-11 1998-01-27 Hitachi Ltd マグネトロンスパッタ装置
JP2000212739A (ja) * 1999-01-27 2000-08-02 Sharp Corp マグネトロンスパッタ装置
JP2007131895A (ja) * 2005-11-09 2007-05-31 Ulvac Japan Ltd マグネトロンスパッタ電極及びマグネトロンスパッタ電極を備えたスパッタリング装置
JP2007283438A (ja) 2006-04-17 2007-11-01 Ntt Electornics Corp ブラスト加工方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2204469A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110024290A1 (en) * 2009-07-30 2011-02-03 Hon Hai Precision Industry Co., Ltd. Magnetic device and magnetron sputtering device using the same
US8382967B2 (en) * 2009-07-30 2013-02-26 Hon Hai Precision Industry Co., Ltd. Magnetic device and magnetron sputtering device using the same
JP2012186057A (ja) * 2011-03-07 2012-09-27 Kobe Steel Ltd プラズマ源及びこのプラズマ源を備えた成膜装置

Also Published As

Publication number Publication date
JPWO2009057715A1 (ja) 2011-03-10
EP2204469A1 (en) 2010-07-07
JP4314318B2 (ja) 2009-08-12
US20090236219A1 (en) 2009-09-24
CN101595240A (zh) 2009-12-02
JP2009174061A (ja) 2009-08-06
EP2204469A4 (en) 2012-03-28
CN101595240B (zh) 2012-05-23
US7785449B2 (en) 2010-08-31

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