EP1644557B1 - Electrochemical processing cell - Google Patents
Electrochemical processing cell Download PDFInfo
- Publication number
- EP1644557B1 EP1644557B1 EP04756864A EP04756864A EP1644557B1 EP 1644557 B1 EP1644557 B1 EP 1644557B1 EP 04756864 A EP04756864 A EP 04756864A EP 04756864 A EP04756864 A EP 04756864A EP 1644557 B1 EP1644557 B1 EP 1644557B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plating
- copper
- anolyte
- membrane
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Not-in-force
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
Definitions
- Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum.
- deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features.
- CVD chemical vapor deposition
- PVD physical vapor deposition
- plating techniques i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
- the anode of the plating cell generally includes a plurality of slots formed therein, the plurality of slots being positioned parallel to each other and are configured to remove a concentrated hydrodynamic Newtonian fluid layer from the anode chamber surface during plating processes.
- a membrane support having a plurality of slots or channels formed in a first side of the assembly, along with a plurality of bores formed into a second side of the membrane support, wherein the plurality of bores are in fluid communication with the slots on the opposing side of the membrane support
- FIG. 4 illustrates an exploded perspective view of an exemplary membrane support assembly 106 of the invention.
- Membrane support assembly 106 generally includes an upper ring shaped support member 401, an intermediate membrane support member 400, and a lower support member 402.
- Upper and lower support member's 401 and 402 are generally configured to provide structural support to intermediate membrane support member 400, i.e., upper support member 401 operates to secure intermediate membrane support member 400 to lower support member 402, while lower support member 402 receives intermediate membrane support member 400.
- Intermediate membrane support member 400 generally includes a substantially planar upper surface having a plurality of bores partially formed therethrough.
- a lower surface of intermediate membrane support member 400 generally includes a tapered outer portion 403 and a substantially planar inner membrane engaging surface 404.
- This configuration allows the concentrated copper sulfate received within slots 302 to be communicated to one or more of channels 202. Thereafter, the concentrated copper sulfate may be communicated via channels 202 to the annular drain channel 203 positioned within recessed region 201.
- the drain 203 in communication with channels 202 may generally be communicated through base plate 104 and back to a central anolyte supply tank, where the concentrated copper sulfate removed from the anode surface may be recombined with a volume of stored copper sulfate used for the anolyte solution.
- the anolyte solution is generally contained in the volume below the membrane and above the anode.
- the anolyte solution may be simply the catholyte solution without the plating additives, i.e., levelers, suppressors, and/or accelerators.
- specific anolyte solutions other than just stripped catholyte solutions, provide a substantial improvement in plating parameters. Specifically, copper transfer through the membrane and prevention of copper sulfate and hydroxide precipitation, i.e., when the Cu ions transport through membrane, copper sulfate accumulates in the anolyte and starts to precipitate on the anode provoking its passiviation are improved.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
- Fuel Cell (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/616,044 US7128823B2 (en) | 2002-07-24 | 2003-07-08 | Anolyte for copper plating |
US10/627,336 US20040134775A1 (en) | 2002-07-24 | 2003-07-24 | Electrochemical processing cell |
PCT/US2004/022183 WO2005007933A1 (en) | 2003-07-08 | 2004-07-08 | Electrochemical processing cell |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1644557A1 EP1644557A1 (en) | 2006-04-12 |
EP1644557B1 true EP1644557B1 (en) | 2010-11-10 |
Family
ID=34083682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04756864A Not-in-force EP1644557B1 (en) | 2003-07-08 | 2004-07-08 | Electrochemical processing cell |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1644557B1 (ja) |
JP (1) | JP4448133B2 (ja) |
CN (1) | CN1816650A (ja) |
AT (1) | ATE487811T1 (ja) |
TW (1) | TW200514873A (ja) |
WO (1) | WO2005007933A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023196284A1 (en) * | 2022-04-04 | 2023-10-12 | Applied Materials, Inc. | Electroplating systems and methods with increased metal ion concentrations |
WO2023196285A1 (en) * | 2022-04-04 | 2023-10-12 | Applied Materials, Inc. | Electroplating systems and methods with increased metal ion concentrations |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040217005A1 (en) * | 2002-07-24 | 2004-11-04 | Aron Rosenfeld | Method for electroplating bath chemistry control |
WO2009055992A1 (en) * | 2007-11-02 | 2009-05-07 | Acm Research (Shanghai) Inc. | Plating apparatus for metallization on semiconductor workpiece |
US8496790B2 (en) * | 2011-05-18 | 2013-07-30 | Applied Materials, Inc. | Electrochemical processor |
JP5834986B2 (ja) * | 2012-02-14 | 2015-12-24 | 三菱マテリアル株式会社 | Sn合金電解めっき方法 |
US9068272B2 (en) * | 2012-11-30 | 2015-06-30 | Applied Materials, Inc. | Electroplating processor with thin membrane support |
JP5938426B2 (ja) | 2014-02-04 | 2016-06-22 | 株式会社豊田中央研究所 | 電気めっきセル、及び、金属皮膜の製造方法 |
JP5995906B2 (ja) * | 2014-05-19 | 2016-09-21 | 株式会社豊田中央研究所 | 隔膜の製造方法、及び金属被膜の製造方法 |
CN109056002B (zh) * | 2017-07-19 | 2022-04-15 | 叶旖婷 | 一种通孔隔离法酸性电镀铜工艺及其装置 |
JP6999195B2 (ja) * | 2017-08-30 | 2022-01-18 | エーシーエム リサーチ (シャンハイ) インコーポレーテッド | めっき装置 |
CN107641821B (zh) * | 2017-09-14 | 2019-06-07 | 上海新阳半导体材料股份有限公司 | 一种硫酸铜电镀液、其制备方法和应用及电解槽 |
WO2019164920A1 (en) * | 2018-02-23 | 2019-08-29 | Lam Research Corporation | Electroplating system with inert and active anodes |
TWI810250B (zh) * | 2019-02-27 | 2023-08-01 | 大陸商盛美半導體設備(上海)股份有限公司 | 電鍍裝置 |
CN111074307A (zh) * | 2020-01-04 | 2020-04-28 | 安徽工业大学 | 一种隔膜电解法镀铜镀液稳定工艺 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH691209A5 (de) * | 1993-09-06 | 2001-05-15 | Scherrer Inst Paul | Herstellungsverfahren für einen Polmerelektrolyten und elektrochemische Zelle mit diesem Polymerelektrolyten. |
US5883762A (en) * | 1997-03-13 | 1999-03-16 | Calhoun; Robert B. | Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations |
US7128823B2 (en) * | 2002-07-24 | 2006-10-31 | Applied Materials, Inc. | Anolyte for copper plating |
US20040118694A1 (en) * | 2002-12-19 | 2004-06-24 | Applied Materials, Inc. | Multi-chemistry electrochemical processing system |
US7247222B2 (en) * | 2002-07-24 | 2007-07-24 | Applied Materials, Inc. | Electrochemical processing cell |
-
2004
- 2004-07-08 JP JP2006518950A patent/JP4448133B2/ja not_active Expired - Fee Related
- 2004-07-08 TW TW093120480A patent/TW200514873A/zh unknown
- 2004-07-08 CN CN200480019317.4A patent/CN1816650A/zh active Pending
- 2004-07-08 EP EP04756864A patent/EP1644557B1/en not_active Not-in-force
- 2004-07-08 AT AT04756864T patent/ATE487811T1/de not_active IP Right Cessation
- 2004-07-08 WO PCT/US2004/022183 patent/WO2005007933A1/en active Application Filing
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023196284A1 (en) * | 2022-04-04 | 2023-10-12 | Applied Materials, Inc. | Electroplating systems and methods with increased metal ion concentrations |
WO2023196285A1 (en) * | 2022-04-04 | 2023-10-12 | Applied Materials, Inc. | Electroplating systems and methods with increased metal ion concentrations |
Also Published As
Publication number | Publication date |
---|---|
TW200514873A (en) | 2005-05-01 |
JP4448133B2 (ja) | 2010-04-07 |
CN1816650A (zh) | 2006-08-09 |
ATE487811T1 (de) | 2010-11-15 |
EP1644557A1 (en) | 2006-04-12 |
WO2005007933A1 (en) | 2005-01-27 |
JP2007523996A (ja) | 2007-08-23 |
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Inventor name: SINGH, SARAVJEET Inventor name: TULSHIBAGWALE, SHESHRAJ L. Inventor name: LUBOMIRSKY, DMITRY Inventor name: YANG, MICHAEL X Inventor name: KOVARSKY, NICOLAY Y. Inventor name: DORDI, YEZDI N. |
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