EP1644557B1 - Cellule de traitement electrochimique - Google Patents

Cellule de traitement electrochimique Download PDF

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Publication number
EP1644557B1
EP1644557B1 EP04756864A EP04756864A EP1644557B1 EP 1644557 B1 EP1644557 B1 EP 1644557B1 EP 04756864 A EP04756864 A EP 04756864A EP 04756864 A EP04756864 A EP 04756864A EP 1644557 B1 EP1644557 B1 EP 1644557B1
Authority
EP
European Patent Office
Prior art keywords
plating
copper
anolyte
membrane
anode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Not-in-force
Application number
EP04756864A
Other languages
German (de)
English (en)
Other versions
EP1644557A1 (fr
Inventor
Michael X Yang
Dmitry Lubomirsky
Yezdi N. Dordi
Saravjeet Singh
Sheshraj L. Tulshibagwale
Nicolay Y. Kovarsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/616,044 external-priority patent/US7128823B2/en
Priority claimed from US10/627,336 external-priority patent/US20040134775A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP1644557A1 publication Critical patent/EP1644557A1/fr
Application granted granted Critical
Publication of EP1644557B1 publication Critical patent/EP1644557B1/fr
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/002—Cell separation, e.g. membranes, diaphragms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Definitions

  • Metallization of sub-quarter micron sized features is a foundational technology for present and future generations of integrated circuit manufacturing processes. More particularly, in devices such as ultra large scale integration-type devices, i.e., devices having integrated circuits with more than a million logic gates, the multilevel interconnects that lie at the heart of these devices are generally formed by filling high aspect ratio, i.e., greater than about 4:1, interconnect features with a conductive material, such as copper or aluminum.
  • deposition techniques such as chemical vapor deposition (CVD) and physical vapor deposition (PVD) have been used to fill these interconnect features.
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • plating techniques i.e., electrochemical plating (ECP) and electroless plating, have emerged as promising processes for void free filling of sub-quarter micron sized high aspect ratio interconnect features in integrated circuit manufacturing processes.
  • the anode of the plating cell generally includes a plurality of slots formed therein, the plurality of slots being positioned parallel to each other and are configured to remove a concentrated hydrodynamic Newtonian fluid layer from the anode chamber surface during plating processes.
  • a membrane support having a plurality of slots or channels formed in a first side of the assembly, along with a plurality of bores formed into a second side of the membrane support, wherein the plurality of bores are in fluid communication with the slots on the opposing side of the membrane support
  • FIG. 4 illustrates an exploded perspective view of an exemplary membrane support assembly 106 of the invention.
  • Membrane support assembly 106 generally includes an upper ring shaped support member 401, an intermediate membrane support member 400, and a lower support member 402.
  • Upper and lower support member's 401 and 402 are generally configured to provide structural support to intermediate membrane support member 400, i.e., upper support member 401 operates to secure intermediate membrane support member 400 to lower support member 402, while lower support member 402 receives intermediate membrane support member 400.
  • Intermediate membrane support member 400 generally includes a substantially planar upper surface having a plurality of bores partially formed therethrough.
  • a lower surface of intermediate membrane support member 400 generally includes a tapered outer portion 403 and a substantially planar inner membrane engaging surface 404.
  • This configuration allows the concentrated copper sulfate received within slots 302 to be communicated to one or more of channels 202. Thereafter, the concentrated copper sulfate may be communicated via channels 202 to the annular drain channel 203 positioned within recessed region 201.
  • the drain 203 in communication with channels 202 may generally be communicated through base plate 104 and back to a central anolyte supply tank, where the concentrated copper sulfate removed from the anode surface may be recombined with a volume of stored copper sulfate used for the anolyte solution.
  • the anolyte solution is generally contained in the volume below the membrane and above the anode.
  • the anolyte solution may be simply the catholyte solution without the plating additives, i.e., levelers, suppressors, and/or accelerators.
  • specific anolyte solutions other than just stripped catholyte solutions, provide a substantial improvement in plating parameters. Specifically, copper transfer through the membrane and prevention of copper sulfate and hydroxide precipitation, i.e., when the Cu ions transport through membrane, copper sulfate accumulates in the anolyte and starts to precipitate on the anode provoking its passiviation are improved.

Claims (11)

  1. Cellule de placage électrochimique (100), comprenant :
    un compartiment anolytique positionné dans une partie inférieure d'un bassin de fluide ;
    un compartiment catholytique positionné dans une partie supérieure du bassin de fluide ;
    une membrane cationique d'ionomère à base de polytétrafluoroéthylène (112) ayant une matrice polymérique fluorée positionnée pour séparer le compartiment anolytique du compartiment catholytique ; et
    un élément de diffusion (110) positionné au-dessus de la membrane cationique dans le compartiment catholytique.
  2. Cellule de placage électrochimique de la revendication 1, dans laquelle l'élément de diffusion est un disque poreux ayant une épaisseur uniforme.
  3. Cellule de placage électrochimique selon la revendication 1 ou 2, dans laquelle la membrane cationique est configurée pour faire passer à travers elle entre 94% et 98 d'ions métalliques à des densités de courant de placage entre 5 mA/cm2 et 20 mA/cm2 et entre 93% et 97% d'ions métalliques à des densités de courant de placage entre 30 mA/cm2 et 60 mA/cm2.
  4. Cellule de placage électrochimique selon la revendication 1 ou 2, dans laquelle la membrane cationique a une conductivité entre 20 ohm cm2 et 45 ohm cm2 à une densité de courant de placage de 10 mA/cm2 et entre 20 ohm cm2 et 30 ohm cm2 à une densité de courant de placage de 10 mA/cm2.
  5. Cellule de placage électrochimique selon la revendication 1, dans laquelle la membrane cationique a un transfert d'eau entre 3 ml/Amphr et 7,5 ml/Amphr.
  6. Procédé de placage de métal sur un substrat utilisant la cellule de placage électrochimique de la revendication 1, comprenant le fait :
    de positionner le substrat dans une solution catholytique contenue dans une chambre catholytique d'une cellule de placage, la solution catholytique comprenant :
    une source d'acide à une concentration entre 5 g/L et 15 g/L ;
    une source de cuivre à une concentration entre 0,8M et 0,9M ; et
    des ions de chlore à une concentration entre 25 ppm et 75 ppm ; et
    d'appliquer une polarisation de placage entre le substrat et une anode positionnée dans une chambre anolytique de la cellule de placage, la chambre anolytique étant séparée de la chambre catholytique par une membrane ionique et étant alimentée d'une solution anolytique comprenant une source de cuivre qui a une concentration supérieure à 51 g/L.
  7. Procédé de la revendication 6, dans lequel la solution catholytique comprend en plus : un niveleur à une concentration entre 2 mL/L et 3 mL/L ; un suppresseur à une concentration entre 2 mL/L et 3 mL/L ; et un accélérateur à une concentration entre 5,5 mL/L et 8 mL/L.
  8. Procédé de la revendication 6, dans lequel l'anolyte a un pH entre 2 et 4,8.
  9. Procédé de la revendication 8, dans lequel l'anolyte comprend un sel de cuivre 11 ayant une concentration d'ions de cuivre entre 0,1M et 2M.
  10. Procédé de la revendication 9, dans lequel le sel de cuivre 11 comprend au moins l'un du sulfate de cuivre, du sulfonate de cuivre, du chlorure de cuivre, du nitrate de cuivre et leurs mélanges.
  11. Procédé de la revendication 9, dans lequel l'anolyte fournit un transport de cuivre d'ions de cuivre à travers la membrane ionique entre 90% et 100%.
EP04756864A 2003-07-08 2004-07-08 Cellule de traitement electrochimique Not-in-force EP1644557B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/616,044 US7128823B2 (en) 2002-07-24 2003-07-08 Anolyte for copper plating
US10/627,336 US20040134775A1 (en) 2002-07-24 2003-07-24 Electrochemical processing cell
PCT/US2004/022183 WO2005007933A1 (fr) 2003-07-08 2004-07-08 Cellule de traitement electrochimique

Publications (2)

Publication Number Publication Date
EP1644557A1 EP1644557A1 (fr) 2006-04-12
EP1644557B1 true EP1644557B1 (fr) 2010-11-10

Family

ID=34083682

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04756864A Not-in-force EP1644557B1 (fr) 2003-07-08 2004-07-08 Cellule de traitement electrochimique

Country Status (6)

Country Link
EP (1) EP1644557B1 (fr)
JP (1) JP4448133B2 (fr)
CN (1) CN1816650A (fr)
AT (1) ATE487811T1 (fr)
TW (1) TW200514873A (fr)
WO (1) WO2005007933A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023196285A1 (fr) * 2022-04-04 2023-10-12 Applied Materials, Inc. Systèmes et procédés de placage électrolytique à concentrations en ions métalliques accrues
WO2023196284A1 (fr) * 2022-04-04 2023-10-12 Applied Materials, Inc. Systèmes et procédés d'électroplacage à concentrations en ions métalliques accrues

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040217005A1 (en) * 2002-07-24 2004-11-04 Aron Rosenfeld Method for electroplating bath chemistry control
WO2009055992A1 (fr) * 2007-11-02 2009-05-07 Acm Research (Shanghai) Inc. Appareil de placage pour une métallisation sur une pièce à travailler semi-conductrice
US8496790B2 (en) * 2011-05-18 2013-07-30 Applied Materials, Inc. Electrochemical processor
JP5834986B2 (ja) * 2012-02-14 2015-12-24 三菱マテリアル株式会社 Ｓｎ合金電解めっき方法
US9068272B2 (en) * 2012-11-30 2015-06-30 Applied Materials, Inc. Electroplating processor with thin membrane support
JP5938426B2 (ja) 2014-02-04 2016-06-22 株式会社豊田中央研究所 電気めっきセル、及び、金属皮膜の製造方法
JP5995906B2 (ja) * 2014-05-19 2016-09-21 株式会社豊田中央研究所 隔膜の製造方法、及び金属被膜の製造方法
CN109056002B (zh) * 2017-07-19 2022-04-15 叶旖婷 一种通孔隔离法酸性电镀铜工艺及其装置
CN111032923B (zh) * 2017-08-30 2021-12-28 盛美半导体设备(上海)股份有限公司 电镀装置
CN107641821B (zh) * 2017-09-14 2019-06-07 上海新阳半导体材料股份有限公司 一种硫酸铜电镀液、其制备方法和应用及电解槽
TWI810250B (zh) * 2019-02-27 2023-08-01 大陸商盛美半導體設備（上海）股份有限公司 電鍍裝置
CN111074307A (zh) * 2020-01-04 2020-04-28 安徽工业大学 一种隔膜电解法镀铜镀液稳定工艺

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH691209A5 (de) * 1993-09-06 2001-05-15 Scherrer Inst Paul Herstellungsverfahren für einen Polmerelektrolyten und elektrochemische Zelle mit diesem Polymerelektrolyten.
US5883762A (en) * 1997-03-13 1999-03-16 Calhoun; Robert B. Electroplating apparatus and process for reducing oxidation of oxidizable plating anions and cations
US7128823B2 (en) * 2002-07-24 2006-10-31 Applied Materials, Inc. Anolyte for copper plating
US20040118694A1 (en) * 2002-12-19 2004-06-24 Applied Materials, Inc. Multi-chemistry electrochemical processing system
US7247222B2 (en) * 2002-07-24 2007-07-24 Applied Materials, Inc. Electrochemical processing cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023196285A1 (fr) * 2022-04-04 2023-10-12 Applied Materials, Inc. Systèmes et procédés de placage électrolytique à concentrations en ions métalliques accrues
WO2023196284A1 (fr) * 2022-04-04 2023-10-12 Applied Materials, Inc. Systèmes et procédés d'électroplacage à concentrations en ions métalliques accrues

Also Published As

Publication number Publication date
JP2007523996A (ja) 2007-08-23
ATE487811T1 (de) 2010-11-15
CN1816650A (zh) 2006-08-09
JP4448133B2 (ja) 2010-04-07
WO2005007933A1 (fr) 2005-01-27
TW200514873A (en) 2005-05-01
EP1644557A1 (fr) 2006-04-12

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