EP1526554A2 - Strahlungsbildwandler - Google Patents
Strahlungsbildwandler Download PDFInfo
- Publication number
- EP1526554A2 EP1526554A2 EP04256434A EP04256434A EP1526554A2 EP 1526554 A2 EP1526554 A2 EP 1526554A2 EP 04256434 A EP04256434 A EP 04256434A EP 04256434 A EP04256434 A EP 04256434A EP 1526554 A2 EP1526554 A2 EP 1526554A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation image
- image conversion
- conversion panel
- protective film
- stimulable phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 91
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 230000001681 protective effect Effects 0.000 claims abstract description 33
- 229910052734 helium Inorganic materials 0.000 claims abstract description 15
- 229910052786 argon Inorganic materials 0.000 claims abstract description 10
- 229910052754 neon Inorganic materials 0.000 claims abstract description 9
- 229910052743 krypton Inorganic materials 0.000 claims abstract description 8
- 229910052724 xenon Inorganic materials 0.000 claims abstract description 8
- 239000007789 gas Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 22
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 229910052693 Europium Inorganic materials 0.000 claims description 12
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 12
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 229910052772 Samarium Inorganic materials 0.000 claims description 10
- 229910052794 bromium Inorganic materials 0.000 claims description 10
- 229910052740 iodine Inorganic materials 0.000 claims description 10
- 229910052691 Erbium Inorganic materials 0.000 claims description 9
- 229910052689 Holmium Inorganic materials 0.000 claims description 9
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- 229910052771 Terbium Inorganic materials 0.000 claims description 9
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 9
- 125000004429 atom Chemical group 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052716 thallium Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- 229910052790 beryllium Inorganic materials 0.000 claims description 7
- 229910052792 caesium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 229910052746 lanthanum Inorganic materials 0.000 claims description 7
- 229910052700 potassium Inorganic materials 0.000 claims description 7
- 229910052701 rubidium Inorganic materials 0.000 claims description 7
- 229910052712 strontium Inorganic materials 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 4
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 4
- 229910052775 Thulium Inorganic materials 0.000 claims description 4
- 229910052793 cadmium Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052706 scandium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical group 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 229910001508 alkali metal halide Inorganic materials 0.000 claims 1
- 150000008045 alkali metal halides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 72
- 239000010408 film Substances 0.000 description 27
- 238000001704 evaporation Methods 0.000 description 23
- 230000008020 evaporation Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 18
- 239000012298 atmosphere Substances 0.000 description 17
- -1 silver halide Chemical class 0.000 description 17
- 239000003566 sealing material Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 10
- 230000005284 excitation Effects 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000001307 helium Substances 0.000 description 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 230000000638 stimulation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 229920000049 Carbon (fiber) Polymers 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 239000004917 carbon fiber Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000003745 diagnosis Methods 0.000 description 3
- 238000009820 dry lamination Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- VNDYJBBGRKZCSX-UHFFFAOYSA-L zinc bromide Chemical compound Br[Zn]Br VNDYJBBGRKZCSX-UHFFFAOYSA-L 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- KPWJBEFBFLRCLH-UHFFFAOYSA-L cadmium bromide Chemical compound Br[Cd]Br KPWJBEFBFLRCLH-UHFFFAOYSA-L 0.000 description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 description 2
- OKIIEJOIXGHUKX-UHFFFAOYSA-L cadmium iodide Chemical compound [Cd+2].[I-].[I-] OKIIEJOIXGHUKX-UHFFFAOYSA-L 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- AMXOYNBUYSYVKV-UHFFFAOYSA-M lithium bromide Chemical compound [Li+].[Br-] AMXOYNBUYSYVKV-UHFFFAOYSA-M 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- JAAGVIUFBAHDMA-UHFFFAOYSA-M rubidium bromide Chemical compound [Br-].[Rb+] JAAGVIUFBAHDMA-UHFFFAOYSA-M 0.000 description 2
- FGDZQCVHDSGLHJ-UHFFFAOYSA-M rubidium chloride Chemical compound [Cl-].[Rb+] FGDZQCVHDSGLHJ-UHFFFAOYSA-M 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- JKNHZOAONLKYQL-UHFFFAOYSA-K tribromoindigane Chemical compound Br[In](Br)Br JKNHZOAONLKYQL-UHFFFAOYSA-K 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- UAYWVJHJZHQCIE-UHFFFAOYSA-L zinc iodide Chemical compound I[Zn]I UAYWVJHJZHQCIE-UHFFFAOYSA-L 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- UNMYWSMUMWPJLR-UHFFFAOYSA-L Calcium iodide Chemical compound [Ca+2].[I-].[I-] UNMYWSMUMWPJLR-UHFFFAOYSA-L 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229910004755 Cerium(III) bromide Inorganic materials 0.000 description 1
- 229910004664 Cerium(III) chloride Inorganic materials 0.000 description 1
- 229910008069 Cerium(III) iodide Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910021590 Copper(II) bromide Inorganic materials 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 description 1
- 229910016468 DyF3 Inorganic materials 0.000 description 1
- 229910016495 ErF3 Inorganic materials 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910016644 EuCl3 Inorganic materials 0.000 description 1
- 229910016653 EuF3 Inorganic materials 0.000 description 1
- 229910005258 GaBr3 Inorganic materials 0.000 description 1
- 229910005267 GaCl3 Inorganic materials 0.000 description 1
- 229910005270 GaF3 Inorganic materials 0.000 description 1
- 229910005263 GaI3 Inorganic materials 0.000 description 1
- 229910003317 GdCl3 Inorganic materials 0.000 description 1
- 229910005693 GdF3 Inorganic materials 0.000 description 1
- 229910004650 HoF3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910021620 Indium(III) fluoride Inorganic materials 0.000 description 1
- 229910021621 Indium(III) iodide Inorganic materials 0.000 description 1
- 229910002249 LaCl3 Inorganic materials 0.000 description 1
- 229910002319 LaF3 Inorganic materials 0.000 description 1
- 229910016859 Lanthanum iodide Inorganic materials 0.000 description 1
- 229910014323 Lanthanum(III) bromide Inorganic materials 0.000 description 1
- 229910013482 LuF3 Inorganic materials 0.000 description 1
- 229910017544 NdCl3 Inorganic materials 0.000 description 1
- 229910017557 NdF3 Inorganic materials 0.000 description 1
- 229910021585 Nickel(II) bromide Inorganic materials 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 229910021587 Nickel(II) fluoride Inorganic materials 0.000 description 1
- 229910021588 Nickel(II) iodide Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 229910019328 PrCl3 Inorganic materials 0.000 description 1
- 229910019322 PrF3 Inorganic materials 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910018057 ScCl3 Inorganic materials 0.000 description 1
- 229910018096 ScF3 Inorganic materials 0.000 description 1
- 229910018094 ScI3 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910021175 SmF3 Inorganic materials 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- 229910004302 TbI3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910008903 TmF3 Inorganic materials 0.000 description 1
- 229920001986 Vinylidene chloride-vinyl chloride copolymer Polymers 0.000 description 1
- 229910009523 YCl3 Inorganic materials 0.000 description 1
- 229910009527 YF3 Inorganic materials 0.000 description 1
- 229910009520 YbF3 Inorganic materials 0.000 description 1
- 229910009535 YbI3 Inorganic materials 0.000 description 1
- 229910021601 Yttrium(III) bromide Inorganic materials 0.000 description 1
- 229910021602 Yttrium(III) iodide Inorganic materials 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PQLAYKMGZDUDLQ-UHFFFAOYSA-K aluminium bromide Chemical compound Br[Al](Br)Br PQLAYKMGZDUDLQ-UHFFFAOYSA-K 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 229910001620 barium bromide Inorganic materials 0.000 description 1
- NKQIMNKPSDEDMO-UHFFFAOYSA-L barium bromide Chemical compound [Br-].[Br-].[Ba+2] NKQIMNKPSDEDMO-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001632 barium fluoride Inorganic materials 0.000 description 1
- 229910001638 barium iodide Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 229910001621 beryllium bromide Inorganic materials 0.000 description 1
- PBKYCFJFZMEFRS-UHFFFAOYSA-L beryllium bromide Chemical compound [Be+2].[Br-].[Br-] PBKYCFJFZMEFRS-UHFFFAOYSA-L 0.000 description 1
- 229910001627 beryllium chloride Inorganic materials 0.000 description 1
- LWBPNIJBHRISSS-UHFFFAOYSA-L beryllium dichloride Chemical compound Cl[Be]Cl LWBPNIJBHRISSS-UHFFFAOYSA-L 0.000 description 1
- JZKFIPKXQBZXMW-UHFFFAOYSA-L beryllium difluoride Chemical compound F[Be]F JZKFIPKXQBZXMW-UHFFFAOYSA-L 0.000 description 1
- 229910001633 beryllium fluoride Inorganic materials 0.000 description 1
- 229910001639 beryllium iodide Inorganic materials 0.000 description 1
- JUCWKFHIHJQTFR-UHFFFAOYSA-L beryllium iodide Chemical compound [Be+2].[I-].[I-] JUCWKFHIHJQTFR-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- LVEULQCPJDDSLD-UHFFFAOYSA-L cadmium fluoride Chemical compound F[Cd]F LVEULQCPJDDSLD-UHFFFAOYSA-L 0.000 description 1
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 1
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Inorganic materials [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 1
- 229910001622 calcium bromide Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- WGEFECGEFUFIQW-UHFFFAOYSA-L calcium dibromide Chemical compound [Ca+2].[Br-].[Br-] WGEFECGEFUFIQW-UHFFFAOYSA-L 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 229910001640 calcium iodide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- ZEDZJUDTPVFRNB-UHFFFAOYSA-K cerium(3+);triiodide Chemical compound I[Ce](I)I ZEDZJUDTPVFRNB-UHFFFAOYSA-K 0.000 description 1
- MOOUSOJAOQPDEH-UHFFFAOYSA-K cerium(iii) bromide Chemical compound [Br-].[Br-].[Br-].[Ce+3] MOOUSOJAOQPDEH-UHFFFAOYSA-K 0.000 description 1
- 238000006757 chemical reactions by type Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- RZQFCZYXPRKMTP-UHFFFAOYSA-K dysprosium(3+);triiodide Chemical compound [I-].[I-].[I-].[Dy+3] RZQFCZYXPRKMTP-UHFFFAOYSA-K 0.000 description 1
- BOXVSFHSLKQLNZ-UHFFFAOYSA-K dysprosium(iii) chloride Chemical compound Cl[Dy](Cl)Cl BOXVSFHSLKQLNZ-UHFFFAOYSA-K 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- OKVQKDALNLHZLB-UHFFFAOYSA-K erbium(3+);triiodide Chemical compound I[Er](I)I OKVQKDALNLHZLB-UHFFFAOYSA-K 0.000 description 1
- HDGGAKOVUDZYES-UHFFFAOYSA-K erbium(iii) chloride Chemical compound Cl[Er](Cl)Cl HDGGAKOVUDZYES-UHFFFAOYSA-K 0.000 description 1
- NNMXSTWQJRPBJZ-UHFFFAOYSA-K europium(iii) chloride Chemical compound Cl[Eu](Cl)Cl NNMXSTWQJRPBJZ-UHFFFAOYSA-K 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- MEANOSLIBWSCIT-UHFFFAOYSA-K gadolinium trichloride Chemical compound Cl[Gd](Cl)Cl MEANOSLIBWSCIT-UHFFFAOYSA-K 0.000 description 1
- IZZTUGMCLUGNPM-UHFFFAOYSA-K gadolinium(3+);triiodide Chemical compound I[Gd](I)I IZZTUGMCLUGNPM-UHFFFAOYSA-K 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical compound Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- KXCRAPCRWWGWIW-UHFFFAOYSA-K holmium(3+);triiodide Chemical compound I[Ho](I)I KXCRAPCRWWGWIW-UHFFFAOYSA-K 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical group [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- KYKBXWMMXCGRBA-UHFFFAOYSA-K lanthanum(3+);triiodide Chemical compound I[La](I)I KYKBXWMMXCGRBA-UHFFFAOYSA-K 0.000 description 1
- XKUYOJZZLGFZTC-UHFFFAOYSA-K lanthanum(iii) bromide Chemical compound Br[La](Br)Br XKUYOJZZLGFZTC-UHFFFAOYSA-K 0.000 description 1
- ICAKDTKJOYSXGC-UHFFFAOYSA-K lanthanum(iii) chloride Chemical compound Cl[La](Cl)Cl ICAKDTKJOYSXGC-UHFFFAOYSA-K 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Inorganic materials [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 1
- 210000004072 lung Anatomy 0.000 description 1
- DWHGOINJUKABSY-UHFFFAOYSA-K lutetium(3+);tribromide Chemical compound [Br-].[Br-].[Br-].[Lu+3] DWHGOINJUKABSY-UHFFFAOYSA-K 0.000 description 1
- NZOCXFRGADJTKP-UHFFFAOYSA-K lutetium(3+);triiodide Chemical compound I[Lu](I)I NZOCXFRGADJTKP-UHFFFAOYSA-K 0.000 description 1
- AEDROEGYZIARPU-UHFFFAOYSA-K lutetium(iii) chloride Chemical compound Cl[Lu](Cl)Cl AEDROEGYZIARPU-UHFFFAOYSA-K 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910001641 magnesium iodide Inorganic materials 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000001459 mortal effect Effects 0.000 description 1
- LBWLQVSRPJHLEY-UHFFFAOYSA-K neodymium(3+);tribromide Chemical compound Br[Nd](Br)Br LBWLQVSRPJHLEY-UHFFFAOYSA-K 0.000 description 1
- DKSXWSAKLYQPQE-UHFFFAOYSA-K neodymium(3+);triiodide Chemical compound I[Nd](I)I DKSXWSAKLYQPQE-UHFFFAOYSA-K 0.000 description 1
- ATINCSYRHURBSP-UHFFFAOYSA-K neodymium(iii) chloride Chemical compound Cl[Nd](Cl)Cl ATINCSYRHURBSP-UHFFFAOYSA-K 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical group [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- IPLJNQFXJUCRNH-UHFFFAOYSA-L nickel(2+);dibromide Chemical compound [Ni+2].[Br-].[Br-] IPLJNQFXJUCRNH-UHFFFAOYSA-L 0.000 description 1
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 description 1
- BFSQJYRFLQUZKX-UHFFFAOYSA-L nickel(ii) iodide Chemical compound I[Ni]I BFSQJYRFLQUZKX-UHFFFAOYSA-L 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 229940079938 nitrocellulose Drugs 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- PVEVRIVGNKNWML-UHFFFAOYSA-K praseodymium(3+);triiodide Chemical compound I[Pr](I)I PVEVRIVGNKNWML-UHFFFAOYSA-K 0.000 description 1
- LHBNLZDGIPPZLL-UHFFFAOYSA-K praseodymium(iii) chloride Chemical compound Cl[Pr](Cl)Cl LHBNLZDGIPPZLL-UHFFFAOYSA-K 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Inorganic materials [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 1
- WFUBYPSJBBQSOU-UHFFFAOYSA-M rubidium iodide Inorganic materials [Rb+].[I-] WFUBYPSJBBQSOU-UHFFFAOYSA-M 0.000 description 1
- BHXBZLPMVFUQBQ-UHFFFAOYSA-K samarium(iii) chloride Chemical compound Cl[Sm](Cl)Cl BHXBZLPMVFUQBQ-UHFFFAOYSA-K 0.000 description 1
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910001625 strontium bromide Inorganic materials 0.000 description 1
- YJPVTCSBVRMESK-UHFFFAOYSA-L strontium bromide Chemical compound [Br-].[Br-].[Sr+2] YJPVTCSBVRMESK-UHFFFAOYSA-L 0.000 description 1
- 229910001631 strontium chloride Inorganic materials 0.000 description 1
- AHBGXTDRMVNFER-UHFFFAOYSA-L strontium dichloride Chemical compound [Cl-].[Cl-].[Sr+2] AHBGXTDRMVNFER-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001643 strontium iodide Inorganic materials 0.000 description 1
- KRIJWFBRWPCESA-UHFFFAOYSA-L strontium iodide Chemical compound [Sr+2].[I-].[I-] KRIJWFBRWPCESA-UHFFFAOYSA-L 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GFISHBQNVWAVFU-UHFFFAOYSA-K terbium(iii) chloride Chemical compound Cl[Tb](Cl)Cl GFISHBQNVWAVFU-UHFFFAOYSA-K 0.000 description 1
- OJXRJPFRTRETRN-UHFFFAOYSA-K terbium(iii) iodide Chemical compound I[Tb](I)I OJXRJPFRTRETRN-UHFFFAOYSA-K 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- HQSWGSFQSCMHFQ-UHFFFAOYSA-K thulium(3+);tribromide Chemical compound [Br-].[Br-].[Br-].[Tm+3] HQSWGSFQSCMHFQ-UHFFFAOYSA-K 0.000 description 1
- LZOMHYVAEHYDST-UHFFFAOYSA-K thulium(3+);triiodide Chemical compound I[Tm](I)I LZOMHYVAEHYDST-UHFFFAOYSA-K 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- QGJSAGBHFTXOTM-UHFFFAOYSA-K trifluoroerbium Chemical compound F[Er](F)F QGJSAGBHFTXOTM-UHFFFAOYSA-K 0.000 description 1
- FDIFPFNHNADKFC-UHFFFAOYSA-K trifluoroholmium Chemical compound F[Ho](F)F FDIFPFNHNADKFC-UHFFFAOYSA-K 0.000 description 1
- JNLSTWIBJFIVHZ-UHFFFAOYSA-K trifluoroindigane Chemical compound F[In](F)F JNLSTWIBJFIVHZ-UHFFFAOYSA-K 0.000 description 1
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- RMUKCGUDVKEQPL-UHFFFAOYSA-K triiodoindigane Chemical compound I[In](I)I RMUKCGUDVKEQPL-UHFFFAOYSA-K 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical group [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- CKLHRQNQYIJFFX-UHFFFAOYSA-K ytterbium(III) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Yb+3] CKLHRQNQYIJFFX-UHFFFAOYSA-K 0.000 description 1
- QNLXXQBCQYDKHD-UHFFFAOYSA-K ytterbium(iii) bromide Chemical compound Br[Yb](Br)Br QNLXXQBCQYDKHD-UHFFFAOYSA-K 0.000 description 1
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical compound [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K4/00—Conversion screens for the conversion of the spatial distribution of X-rays or particle radiation into visible images, e.g. fluoroscopic screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/54—Screens on or from which an image or pattern is formed, picked-up, converted, or stored; Luminescent coatings on vessels
- H01J1/62—Luminescent screens; Selection of materials for luminescent coatings on vessels
Definitions
- the present invention relates to a radiation image conversion panel using a stimulable phosphor.
- the method by which the radiation image is recorded using the radiation image conversion panel is, for example, as follows. Initially, the radiation image conversion panel is fixed to a reading device, and the subject is positioned at the front of the radiation image conversion panel. Next, X-ray is irradiated onto the subject from the front, X-ray transmitted the subject is made incident on the stimulable phosphor layer, and the radiation energy corresponding to the radiation transmission density of each part of the subject is made accumulated.
- an electromagnetic wave (excitation light) such as the visible ray or infrared ray is irradiated on the stimulable phosphor layer in which the energy is accumulated, and it is excited in a time series, the radiation energy accumulated in the stimulable phosphor is emitted as the stimulation light emission.
- a signal by the strength of the stimulation light emission is, for example, photo-electrically converted and made to an electric signal, it can be reproduced as a visual image on a recording material such as a silver halide photographic sensitive material, a display device such as a CRT.
- the superiority or inferiority of the radiation image conversion system using the radiation image conversion panel is largely governed by the stimulable light emission brightness of the panel and the light emission uniformity of the panel, and particularly, these characteristics are largely controlled by the characteristic of the stimulable phosphor to be used.
- Such a radiation image conversion panel is used for an X-ray image diagnosis machine for medical care.
- the stimulable phosphor is accumulated on a substrate on the sheet, and is accommodated in the radiation photographic cassette, and handled.
- the radiation photographic cassette (hereinafter, called “cassette”) is a plain casing in which the radiation image conversion panel can be accommodated, and the physical damage of the stimulable phosphor at the time of conveyance or photographing is prevented, and a case where the excitation light is irradiated onto the stimulable phosphor after photographing and the accumulated image information is deleted, is prevented.
- the radiation image conversion panel 30 whose stimulable phosphor layer 31 is arranged in such a manner that it is in opposite to a front plate 41 of the cassette 40, is accommodated in the cassette 40.
- the radiation photography is conducted in such a manner that a subject 50 is positioned in opposite to an outside surface of the front plate 41 of the cassette 40 in which the radiation image conversion panel 30 is accommodated, an X-ray transmitted the subject 50 is made to transmit the cassette 40, and is irradiated onto the radiation image conversion panel 30.
- the radiation photography by this method can obtain a radiation image having an abundant information amount by a vary small exposure dose compared to a method using the silver halide.
- Such a radiation image conversion panel is largely used also for X-ray image diagnostic machine for medical care.
- a radiation image conversion panel having a higher sensitivity and higher sharpness is required.
- the sensitivity and sharpness of the radiation image conversion panel for example, in Patent Document 1, the sensitivity and sharpness are improved when the thickness of phosphor layer is in the range of 300 - 700 ⁇ m, and a ratio of a volume in which the stimulable phosphor occupies to all volumes of the stimulable phosphor layer, is made 85 - 97%.
- M 1 is at least one kind of alkaline metal selected from the group consisting of Li, Na, K, Rb and Cs
- M2 is at least one kind of bivalent metal selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni
- M 3 is at least one kind of trivalent metal selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, and In
- X, X', and X" are at least one kind of halogen selected from the group consisting of F, CL, Br, and I
- A is at least one kind of metal selected from the group consisting of Eu, Tb, In, Ga, Cs, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg, and a
- a method for removing the scattered rays there is a method for absorbing the low energy radiation by providing a radiation absorption layer formed of metal or the like on the inside surface of the cassette front plate (for example, refer to Patent Document 4).
- the photographing is conducted by irradiating X-ray from the front, after X-ray transmits the radiation image conversion panel, because it is scattered at the more back portion than the radiation image conversion panel of the device, and incident again on the radiation image conversion panel, and the stimulable phosphor is exposed, there is a problem that the contrast is lowered.
- An object of the present invention is to prevent a back scattering of X-ray harmful to image pick-up and to improve the contrast or sharpness of the radiation image conversion panel.
- An aspect of the present invention includes a package including:
- An embodiment of the present invention includes a package, for example, as shown in Fig. 1. It is characterized that: in a radiation image conversion panel in which a stimulable phosphor layer 12 provided on a substrate 11, is sealed by a sealing material 20 (also called as a moisture protective film) to form a package, and X-ray is irradiated on the stimulable phosphor layer 12 from the substrate 11 side, an inert gas selected from the group consisting of N 2 , He, Ne, Ar, Kr and Xe is filled on the stimulable phosphor layer 12 side of the substrate 11.
- Figure 10 in Fig. 1 indicates a phosphor panel.
- the stimulable phosphor layer includes the stimulable phosphor expressed by General Formula (1)
- Formula (I) M 1 X ⁇ aM 2 X' 2 bM 3 X'' 3 : eA
- M 1 represents an alkali metal atom selected from the group consisting of Li, Na, K, Rb and Cs
- M 2 represents a divalent metal atom selected from the group consisting of Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu and Ni
- M 3 represents a trivalent metal atom selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga and
- X, X' and X" each represent independently a halogen atom selected from the group consisting of F, Cl, Br and I
- A represents a metal atom selected from the group consisting of F, Cl, Br and I
- A represents a
- M 1 in General Formula (1) is at least one kind of alkaline metal selected from the group consisting of K, Rb, and Cs.
- Another embodiment of the present invention includes a package characterized in that: in the radiation image conversion panel of the present invention, X in General Formula (1) is at least one kind of halogen Br or I.
- M 2 in General Formula (1) is at least one kind of bivalent metal selected from Be, Mg, Ca, Sr and Ba.
- M 3 in General Formula (1) is at least one kind of trivalent metal selected from the group consisting of Y, La, Ce, Sm, Eu, Cd, Lu, Ga and In.
- Another embodiment of the present invention includes a package characterized in that: in the radiation image conversion panel of the present invention, b in General Formula (1) shows a numeric value in a range of 0 ⁇ b ⁇ 10 -2 .
- a in General Formula (1) is at least one kind of metal selected from the group consisting of Eu, Cs, Sm, Tl and Na.
- Another embodiment of the present invention includes a package characterized in that: in the radiation image conversion panel of the present invention, as shown in Fig. 2, the stimulable phosphor layer has a columnar (or pillar) crystal 13 of the stimulable phosphor.
- Another embodiment of the present invention includes a package characterized in that: in the radiation image conversion panel of the present invention, the columnar crystal 13 has the stimulable phosphor expressed by General Formula (2).
- Formula (2) CsX A
- X expresses Br or I
- A expresses Eu, In, Ga or Ce.
- the inert gas sealed on the stimulable phosphor layer side of the substrate is excited by X-ray which is irradiated from the substrate side and which transmits the stimulable phosphor layer, or weak X-ray which transmits the radiation image conversion panel and is scattered by the back objects and is incident again on the radiation image conversion panel, and a very weak light whose wavelength is near the excitation light of the stimulable phosphor, is emitted, noises near the surface of the stimulable phosphor layer can be erased, and the contrast or sharpness of the reproduction image can be improved.
- the radiation image conversion panel of the present invention is, as shown in Fig. 1, Fig. 2, composed of a phosphor plate 10 in which a stimulable phosphor layer 12 formed of a prismatic crystal 13 is formed on a part excluding the peripheral part of the one surface of a substrate 11, and a sealing material 20 for sealing the stimulable phosphor layer 12 adhered though a spacer 21 jointed to the peripheral part of the surface of the stimulable phosphor layer 12 side of the substrate 11. Further, the rare gas or N 2 gas is filled between the substrate 11 and the sealing material 20.
- a resin impregnation carbon fiber carbon fiber reinforced resin
- a carbon fiber in the market Toho rayon (Co.) made #132, epoxy resin impregnation
- a substrate having the heat resistance can be arbitrarily selected from the publicly known material, and a metallic sheet formed of a quarts glass sheet, aluminum, iron, tin, chrome, and resin sheet formed of aramid, or a sheet in which these sheets are pasted together, can be used.
- a substance expressed by General Formula (1) can be used as the stimulable phosphor preferably used for the present invention.
- M 1 is at least one kind of alkaline metal selected from the group consisting of Li, Na, K, Rb and Cs, and particularly, it is preferable that M 1 is at least one kind of alkaline metal selected from the group consisting of K, Rb and Cs.
- M 2 is at least one kind of bivalent metal selected from the group consisting of Be, Ca, Sr, Ba, Zn, Cd, Cu and Ni, and particularly, it is preferable that M 2 is at least one kind of bivalent metal selected from Be, Mg, Ca, Sr and Ba.
- M 3 is at least one kind of trivalent metal selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ca and In, and particularly, it is preferable that M 3 is at least one kind of trivalent metal selected from the group consisting of Y, La, Ce, Sm, Eu, Gd, Lu, Al, Ga and In.
- X, X' and X" are at least one kind of halogen selected from the group consisting of F, Cl, Br and I, and particularly, it is preferable that X is at least one kind of halogen Br or I.
- A is at least one kind of metal selected from the group consisting of Eu, Tb, In, Ga, Cs, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg, and particularly, it is preferable that A is at least one kind of metal selected from the group consisting of Eu, Cs, Sm, Tl and Na.
- Coefficients a, b, e respectively show numeric values of ranges of 0 ⁇ a ⁇ 0.5, 0 ⁇ b ⁇ 0.5, 0 ⁇ e ⁇ 0.2, and particularly, it is preferable that b shows a numeric value of a range of 0 ⁇ b ⁇ 10 -2 .
- the columnar crystal 13 has a stimulable phosphor expressed by General Formula (2).
- General Formula (2) CsX A
- X expresses Br or I
- A expresses EU, In, Ga or Ce.
- the stimulable phosphor is produced by a production method, which will be described below, by using a phosphor material of, for example, the following (a) - (d).
- the phosphor materials of the above (a) - (d) are weighed so that ranges of a, b, e of General Formula (1) are satisfied, and mixed in the pure water. In this case, by using a mortal, ball mil, mixer mil, they may also be sufficiently mixed.
- the obtained material mixture is filled in the heat resistive vessel such as a quarts pot or alumina pot, and baked in the electric furnace. It is preferable that the baking temperature is 500 - 1000 °C. Although the baking time period is different depending on the filling amount, baking temperature of the material mixture, it is preferable that the baking time period is 0.5 - 6 hours.
- a baking atmosphere it is preferable that it is a weak reducing atmosphere such as a nitrogen gas atmosphere including a small amount of hydrogen gas, a carbon dioxide gas atmosphere including a small amount of carbon monoxide, a neutral atmosphere such as a nitrogen gas atmosphere, argon gas atmosphere, or a weak acidic atmosphere including a small amount of oxygen gas.
- a weak reducing atmosphere such as a nitrogen gas atmosphere including a small amount of hydrogen gas, a carbon dioxide gas atmosphere including a small amount of carbon monoxide, a neutral atmosphere such as a nitrogen gas atmosphere, argon gas atmosphere, or a weak acidic atmosphere including a small amount of oxygen gas.
- the baked material is taken from the electric furnace and powdered, after that, the powder of the baking material is filled again in the heat resistive vessel and put into the electric furnace, and when it is baked again under the same baking condition as the above description, the light emission brightness of the stimulable phosphor can be more enhanced, further, in the case where the temperature of the baking material is cooled from the baking temperature to the room temperature, also when the baking material is taken from the electric furnace and cooled in the air, a desired stimulable phosphor can be obtained, however, it may also be cooled under a same weak reducing atmosphere, same neutral atmosphere, or same weak acidic atmosphere, as it is, as at the time of baking.
- the baking material when the baking material is moved from a heating section to a cooling section in the electric furnace, and is quickly cooled under the weak reducing atmosphere, neutral atmosphere, or weak acidic atmosphere, the light emission brightness of the obtained stimulable phosphor by the stimulation, can be more enhanced.
- the stimulable phosphor layer 12 is formed when the stimulable phosphor is made a evaporation source, and it is vapor phase accumulated on one side surface of the substrate 11.
- a vapor phase accumulation method an evaporation method, sputtering method, CVD method, ion plating method, or the like, can be used.
- the evaporation method initially, after the substrate 11 is arranged in the evaporation device, the inside of device is exhausted to a degree of vacuum of about 1.333 ⁇ 10 -4 Pa. Next, the stimulable phosphor is arranged in the evaporation device making it an evaporation source, and heating-evaporated by a method such as a resistance heating method, or electron beam method, and the stimulable phosphor is grown to a desired thickness on the surface of substrate 11.
- a method such as a resistance heating method, or electron beam method
- the stimulable phosphor layer 12 not including a binding material is formed.
- the stimulable phosphor layer 12 can also be formed in a plurality of times.
- the above evaporation process it is also possible that a plurality of resistance heating machines or electron beams are used, and a plurality of stimulable phosphor materials are made a evaporation source, and they are co-evaporated, and simultaneously when the stimulable phosphor which is an object, is composed on the substrate 11, the stimulable phosphor layer 12 is formed.
- the film thickness of the stimulable phosphor layer 12 is different depending on a purpose of use of a radiation image conversion panel, or a kind of the stimulable phosphor, however, it is more than 50 ⁇ m, preferably, 300 - 700 ⁇ m.
- the temperature of the substrate 11 on which the stimulable phosphor layer 12 is formed it is preferable that it is set to 50 °C - 400 °C, and for a characteristic of the phosphor, 100 °C - 250 °C is preferable, and when a resin is used for the substrate 11, the heat resistance of the resin is considered, it is preferable that it is 50 °C - 150 °C, and more preferably, it is 50 °C - 100 °C.
- Fig. 2 is a view showing a condition that the stimulable phosphor layer 12 is formed by the evaporation on the substrate 11.
- ⁇ 2 an incident angle of a steam flow 12 of the stimulable phosphor to a normal direction (R) of the substrate 11 surface fixed to a substrate holder 15
- ⁇ 1 an angle of the columnar crystal 13 to be formed to the normal direction (R) of the substrate 11 surface
- ⁇ 1 is about a half of ⁇ 2, and at this angle, the columnar crystal 13 is formed.
- a growth angle of the columnar crystal 13 of the stimulable phosphor is 10 - 70°, and more preferably, it is 20° - 55°.
- the incident angle is made 20 - 80°, and to make it 20 - 55°, it is preferable that the incident angle is made 40 - 70°.
- the interval of the shortest portion between the substrate 11 and the evaporation source are arranged in almost 10 cm - 60 cm corresponding to an average range of the stimulable phosphor.
- a size of the columnar crystal 13 is 1 ⁇ m - 50 ⁇ m, and more preferably, it is 1 ⁇ m - 30 ⁇ m. That is, when the columnar crystal 13 is thinner than 1 ⁇ m, because the stimulable excitation light is scattered by the columnar crystal 13, MTF is lowered, and also when the columnar crystal 13 is more than 50 ⁇ m, the directivity of the stimulable excitation light is lowered, and MTF is lowered.
- a size of the columnar crystal 13 is a mean value of the diameter in which a sectional area of each columnar crystal 13 is circular-converted when the columnar crystal is observed from a surface in parallel with the substrate, and it is calculated from a microphotograph which includes columnar crystals 13 at least more than 100 pieces in a visual field.
- a dimension of an interval between each of columnar crystals is less than 30 ⁇ m, more preferably, it is smaller than 5 ⁇ m.
- the interval exceeds 30 ⁇ m, a filling rate of the phosphor in the phosphor layer is lowered, and the sensitivity is lowered.
- a thickness of the columnar crystal 13 is influenced by the temperature, degree of vacuum, incident angle of the steam flow, and when they are controlled, the columnar crystal 13 with a desired thickness can be produced.
- a filling material such as a bonding agent may be filled in the gap formed between the columnar crystals 13, and excepting that it becomes the reinforcement of the stimulable phosphor layer 12, a material for high light-absorption, a material of high light-reflection may also be filled. Excepting that the reinforcement effect is given by the filing material, it is effective for decreasing the light diffusion toward the lateral direction of the stimulation excitation light incident on the stimulable phosphor layer 12.
- the substrate 11 is arranged in a sputtering device, inside of the device is exhausted once, and is made to the degree of vacuum of about 1.333 ⁇ 10 -2 Pa, and next, an inert gas such as Ar, Ne, as a gas for sputtering, is introduced in the sputtering device, and is made to gas pressure of about 1.333 ⁇ 10 -1 Pa.
- an inert gas such as Ar, Ne, as a gas for sputtering
- the stimulable phosphor is made a target, and when sputtering is made on it, the stimulable phosphor layer 12 with a desired thickness is grown on the substrate 11.
- each kind of application processing can be used. It is also the same in the CVD method, ion plating method, or the like.
- the growing speed of the stimulable phosphor layer 12 in the vapor phase accumulation method is 0.05 ⁇ m/min - 300 ⁇ m/min.
- the growing speed is not larger than 0.05 ⁇ m/min, the productivity of the radiation image conversion panel is poor, and it is not preferable. Further, when the growing speed exceeds 300 ⁇ m/min, the control of the growing speed is difficult, and it is not preferable.
- a sealing material 20 is provided on the surface of the opposite side to the substrate 11 of the stimulable phosphor layer 12.
- the sealing material 20, can be provided in such a manner that, for example, a moisture protective film or glass is adhered to the substrate 11 on the peripheral edge portion of the stimulable phosphor layer 12. It is preferable that the layer thickness of the sealing material is 0. 1 - 2000 ⁇ m.
- the moisture protective resin film cellulose acetate, nitro-cellulose, poly-methyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyester, polyethylene terephthalate, polyethylene, polyvinylidene chloride, nylon, polyethylene tetra-fluoride, polyethylene chloride tri-fluoride, ethylene tetra-fluoride-propylene hexa-fluoride copolymer, vinylidene chloride-vinyl chloride copolymer, vinylidene chloride-acrylonitrile copolymer, can be used.
- the resin film is easily processed, and even when the thickness is made less than 100 ⁇ m, which is thin, there is no problem for the strength during the production process, and because it is a thin layer, it is preferable at a point of the initial image quality.
- these moisture protective resin films may also have layers of inorganic material whose moisture penetrability and oxygen penetrability are low, in a laminated manner.
- an inorganic material there is SiO x (SiO, SiO 2 ), Al 2 O 3 , ZrO 2 , SnO 2 , SiC, SiN, however, in them, particularly, Al 2 O 3 or SiO x is a light transmission rate is high, and the moisture penetrability and the oxygen penetrability are high, that is, because a clack or micropore is small, and a fine film can be formed, it is particularly preferable.
- SiO x , Al 2 O 3 may be individually laminated, however, when both are laminated together, because the moisture penetrability and oxygen penetrability can be made higher, it is more preferable that both of SiO x , Al 2 O 3 are laminated.
- the lamination of inorganic material on the resin film a method such as PVD method, sputtering method, CVD method, PE-CVD (Plasma enhanced CVD), can be used.
- the lamination may be conducted after the phosphor layer is covered by the resin film, or may be conducted before the phosphor layer is covered. It is preferable that the lamination thickness is from 0.01 ⁇ m to about 1 ⁇ m.
- the moisture protective resin film in the market on which an evaporation layer is previously formed may also be used.
- a moisture protective resin film there is, for example, Toppan Insatsu (Co.) GL-AE, or the like.
- the sealing of the stimulable phosphor layer 12 by the sealing material 20 is conducted under the atmosphere of at least one kind of gas by which it is excited by X-ray and the light near the excitation wavelength of the stimulable phosphor is emitted, or under the atmosphere of the mixed gasses of 2 kinds or more.
- a gas which is excited by X-ray and which emits the light near the excitation wavelength of the stimulable phosphor there is a rare gas such as, for example, He, Ne, Ar, Kr, Xe. Which gas is used, is determined by the wavelength of the excitation light of the stimulable phosphor to be used.
- the pressure of the above gas is 500 - 8000 Pa, and it is more preferable that it is 4500 - 7500 Pa.
- the substrate 11 and the sealing material 20 may also be directly bonded, however, when they are bonded through a spacer 21, because a gap can be provided between the stimulable phosphor layer 12 and the sealing material 20, and the rare gas can be filled in the gap, it is preferable.
- the sealing material 20 and the spacer 21 may also be integrally provided.
- a bag in which the rare gas is sealed by using the above moisture protective resin film is formed into the same size as the substrate 11, and after the stimulable phosphor layer 12 is sealed by the sealing material 20, the bag in which the rare gas is sealed, is adhered to the sealing material 20, and the rare gas layer may also be provided on the opposite side to the substrate 11 of the stimulable phosphor layer 12.
- the stimulable phosphor layer 12 may also be sealed by the bag in which the rare gas is sealed.
- the rare gas sealed on the opposite side to the substrate 11 of the stimulable phosphor layer 12 absorbs the X-ray irradiated from the substrate 11 side and transmitted the stimulable phosphor layer 12, or the weak X-ray which transmits the radiation image conversion panel and is scattered by the backward objects and incident again on the radiation image conversion panel, and is excited.
- the rare gas which absorbs the X-ray and is excited emits a weak light of the wavelength near the excitation light of the stimulable phosphor.
- the emitted light from the rare gas is irradiated on the stimulable phosphor layer 12, and erases the image information near the surface of the stimulable phosphor layer 12.
- the back scattering X-ray is weak, noises by the back scattering X-ray is recorded only in the vicinity of the surface of the stimulable phosphor layer 12. Accordingly, when the image information near the surface of the stimulable phosphor layer 12 is erased, noises by the back scattering X-ray can be erased, and the contrast or sharpness of the reproduction image can be improved.
- the substrate is made in such a manner that the light reflection layer is provided on one surface of a transparent crystallized glass of 500 ⁇ m thickness.
- a film is formed when titan oxide (made by Furuuchi Chem. Co.) and zirconium oxide (made by Furuuchi Chem. Co.) are evaporated on the substrate by using an evaporation device.
- the film thickness is adjusted so that a reflection factor of the light of wavelength 400 nm is 85 %, and a reflection factor of the light of wavelength 660 nm is 20 %.
- the stimulable phosphor formed of CsBr: Eu is evaporated, and the stimulable phosphor layer is formed. Initially, it is fixed in a vacuum chamber in the evaporation device, and heated to 240 °C. Next, the nitrogen gas is introduced into the vacuum chamber, and a degree of vacuum is made 0.1 Pa. The surface on which the light reflection layer is provided, of the substrate is faced to the evaporation source. The distance between the evaporation source and the substrate is made 60 cm. Further, aluminum slit is arranged between the evaporation source and the substrate, and a steam of the stimulable phosphor is made incident at an angle of 30° to the normal direction of the substrate surface. The evaporation is conducted while the substrate is conveyed to the surface direction, and the stimulable phosphor layer having the columnar structure of 300 ⁇ m thickness is formed on the substrate, and the phosphor plate is obtained.
- the moisture protective film provided on the stimulable phosphor layer side of the phosphor plate is formed in such a manner that a polyethylene terephthalate (PET 12) whose film thickness is 12 ⁇ m, on which various mat-processing are conducted, and PET (VMPET 12, made by Toyo Metalizing Co.) whose film thickness is 12 ⁇ m, on which alumina is evaporated, are pasted together with a dry-lamination.
- PET 12 polyethylene terephthalate
- VMPET 12 made by Toyo Metalizing Co.
- the moisture protective film provided on the substrate side of the phosphor plate is formed in such a manner that a 9 ⁇ m thick aluminum foil and a 100 ⁇ m thick PET are pasted together with the dry-lamination, and a thermal fusion lacquer is applied on the aluminum foil side.
- the moisture protective films are arranged on both surfaces of the phosphor panel. It is arranged in the vacuum chamber, and after reducing the pressure to 200 Pa, helium gas is flowed in, and the gas in the chamber is replaced. After that, the pressure in the chamber is adjusted again to 7000 Pa, and mutual moisture protective films are fused at the peripheral portion of the phosphor panel by using an impulse sealer under this pressure reduction, and the phosphor panel is sealed, and the radiation image conversion panel is obtained.
- a heater of the impulse sealer a 8 mm width heater is used.
- Example 1 The helium gas in Example 1 is replaced with neon gas, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with argon gas, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with krypton gas, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with xenon gas, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with nitrogen gas, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with the air, and the radiation image conversion panel is obtained.
- Example 1 The helium gas in Example 1 is replaced with oxygen gas, and the radiation image conversion panel is obtained.
- a 40 mm thick lead disk is copied on the radiation image conversion panel, and the X-ray of tube voltage 80 kVp is uniformly irradiated on it.
- the radiation image conversion panel is scanned by a semiconductor laser (660 nm) from the stimulable phosphor layer side, and the stimulable phosphor layer is excited, the stimulation light-emission is received by the light receiving unit (a photoelectric multiplier of the spectral sensitivity S-5), and the image is read.
- the obtained image is outputted by the laser write type film printer.
- the output image is visually observed, and the contrast of the lead disk part (white) and its peripheral part (black) is estimated in 5-stage according to the following standards.
- it is under the rank 3 it is judged that it is not practically suitable for the diagnosis.
- the X ray of tube voltage 80 kVp is irradiated onto the radiation image conversion panel from the substrate side.
- the radiation image conversion panel is scanned by the semiconductor laser (660 nm) from the stimulable phosphor layer side, and the stimulable phosphor layer is excited, and the stimulable light-emission is received by the light receiving unit (photo-electronic multiplier of the spectrum sensitivity S-5), and its strength is measured, and displayed in the relative value in which the initial brightness of the radiation image conversion panel of the comparative example 1 is made 1.0.
- the panel After the X ray of 2000 roentgen (80 kV) is intermittently irradiated on the radiation image conversion panel, the panel is left as it is for 2 days, under a fluorescent lamp of 6000 Lux whose ultraviolet ray is cut, and the X ray information is perfectly erased. After that, the stimulable light-emission strength is measured in the same method as the measurement of initial brightness, and the relative brightness after the irradiation of 2000 roentgen is displayed in the relative value in which the initial brightness is made 100.
- the stimulable light-emission strength is measured in the same method as in the measurement of the initial brightness, and the relative brightness after the humidity deterioration processing is displayed in the relative value in which the initial brightness is made 100.
- the contrast is high. Further, in the radiation image conversion panel in which the rare gas is filled (Examples 1 - 5), as compared to a case where the air is filled (Comparative Examples 1 - 2), the contrast is high. Further, in the radiation image conversion panel in which the nitrogen gas is filled (Example 6), as compared to the Comparative Example 1, the brightness lowering after the humidity deterioration processing is small. Further, in the case where the oxygen is filled (Comparative Example 2), the contrast is low, the initial brightness is also lowered, and the brightness lowering by the irradiation of X ray is low, the brightness lowering after the humidity deterioration processing is large, and practically, it is not suited for the diagnosis.
- gasses of the rare gas, carbon dioxide gas, and nitrogen gas when any one of gasses of the rare gas, carbon dioxide gas, and nitrogen gas is filled in the radiation image conversion panel, a specific performance such as the contrast, brightness, durability, can be improved.
- these gasses may also be individually used, or more than 2 kinds of gasses are mixed and may also be used.
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
- Luminescent Compositions (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003363426A JP2005127850A (ja) | 2003-10-23 | 2003-10-23 | 放射線画像変換パネル及び放射線画像変換パネルの製造方法 |
| JP2003363447 | 2003-10-23 | ||
| JP2003363426 | 2003-10-23 | ||
| JP2003363447A JP2005127851A (ja) | 2003-10-23 | 2003-10-23 | 放射線画像変換パネル |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP1526554A2 true EP1526554A2 (de) | 2005-04-27 |
Family
ID=34395677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP04256434A Withdrawn EP1526554A2 (de) | 2003-10-23 | 2004-10-19 | Strahlungsbildwandler |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20050087698A1 (de) |
| EP (1) | EP1526554A2 (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060049370A1 (en) * | 2004-09-09 | 2006-03-09 | Konica Minolta Medical & Graphic, Inc. | Method for producing radiation image conversion panel |
| CN103695002B (zh) * | 2013-12-26 | 2016-03-30 | 有研稀土新材料股份有限公司 | 无机闪烁材料 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020050570A1 (en) * | 2000-06-01 | 2002-05-02 | Yuji Isoda | Preparation of stimulable phosphor sheet |
| DE10150083A1 (de) * | 2000-10-18 | 2003-03-27 | Konishiroku Photo Ind | Platte zur Umwandlung von Strahlungsbildern |
| US7081631B2 (en) * | 2001-04-03 | 2006-07-25 | Fuji Photo Film Co., Ltd. | Radiation image storage panel |
| JP3743562B2 (ja) * | 2002-02-25 | 2006-02-08 | 富士写真フイルム株式会社 | 蓄積性蛍光体パネル |
-
2004
- 2004-10-19 EP EP04256434A patent/EP1526554A2/de not_active Withdrawn
- 2004-10-20 US US10/968,302 patent/US20050087698A1/en not_active Abandoned
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| Publication number | Publication date |
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| US20050087698A1 (en) | 2005-04-28 |
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