EP1471566A3 - Halbleiterbauelement und dessen Herstellungsverfahren - Google Patents

Halbleiterbauelement und dessen Herstellungsverfahren Download PDF

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Publication number
EP1471566A3
EP1471566A3 EP04007727A EP04007727A EP1471566A3 EP 1471566 A3 EP1471566 A3 EP 1471566A3 EP 04007727 A EP04007727 A EP 04007727A EP 04007727 A EP04007727 A EP 04007727A EP 1471566 A3 EP1471566 A3 EP 1471566A3
Authority
EP
European Patent Office
Prior art keywords
semiconductor device
fabricating
same
conductive film
capacitor electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP04007727A
Other languages
English (en)
French (fr)
Other versions
EP1471566A2 (de
Inventor
Kyoko Egashira
Shin Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP1471566A2 publication Critical patent/EP1471566A2/de
Publication of EP1471566A3 publication Critical patent/EP1471566A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44B—BUTTONS, PINS, BUCKLES, SLIDE FASTENERS, OR THE LIKE
    • A44B11/00—Buckles; Similar fasteners for interconnecting straps or the like, e.g. for safety belts
    • A44B11/005—Buckles combined with other articles, e.g. with receptacles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G06K19/07732—Physical layout of the record carrier the record carrier having a housing or construction similar to well-known portable memory devices, such as SD cards, USB or memory sticks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
EP04007727A 2003-03-31 2004-03-30 Halbleiterbauelement und dessen Herstellungsverfahren Withdrawn EP1471566A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003094213A JP2004303908A (ja) 2003-03-31 2003-03-31 半導体装置及びその製造方法
JP2003094213 2003-03-31

Publications (2)

Publication Number Publication Date
EP1471566A2 EP1471566A2 (de) 2004-10-27
EP1471566A3 true EP1471566A3 (de) 2009-03-25

Family

ID=32959530

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04007727A Withdrawn EP1471566A3 (de) 2003-03-31 2004-03-30 Halbleiterbauelement und dessen Herstellungsverfahren

Country Status (6)

Country Link
US (3) US7190045B2 (de)
EP (1) EP1471566A3 (de)
JP (1) JP2004303908A (de)
KR (4) KR20040088349A (de)
CN (1) CN1300850C (de)
TW (1) TWI334630B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004303908A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
KR100585115B1 (ko) * 2003-12-10 2006-05-30 삼성전자주식회사 금속-절연체-금속 커패시터를 포함하는 반도체 소자 및 그제조방법
US7768055B2 (en) * 2005-11-30 2010-08-03 International Business Machines Corporation Passive components in the back end of integrated circuits
JP5027431B2 (ja) 2006-03-15 2012-09-19 ルネサスエレクトロニクス株式会社 半導体装置
US20080185682A1 (en) * 2007-02-06 2008-08-07 Micrel, Inc. High Voltage Metal-On-Passivation Capacitor
JP5212361B2 (ja) 2007-03-20 2013-06-19 富士通セミコンダクター株式会社 半導体装置及びその製造方法
KR100928511B1 (ko) * 2007-12-26 2009-11-30 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
JP5460127B2 (ja) * 2009-05-28 2014-04-02 シャープ株式会社 半導体装置およびその製造方法
JP6120528B2 (ja) 2012-11-08 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2014156071A1 (ja) * 2013-03-25 2014-10-02 旭化成エレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
KR102008840B1 (ko) * 2013-08-30 2019-08-08 삼성전자 주식회사 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
JP6396653B2 (ja) * 2013-10-30 2018-09-26 ルネサスエレクトロニクス株式会社 半導体装置
US9577025B2 (en) * 2014-01-31 2017-02-21 Qualcomm Incorporated Metal-insulator-metal (MIM) capacitor in redistribution layer (RDL) of an integrated device
JP6336826B2 (ja) * 2014-06-04 2018-06-06 ルネサスエレクトロニクス株式会社 半導体装置
US10211158B2 (en) * 2014-10-31 2019-02-19 Infineon Technologies Ag Power semiconductor module having a direct copper bonded substrate and an integrated passive component, and an integrated power module
JP2018186285A (ja) * 2018-07-03 2018-11-22 ルネサスエレクトロニクス株式会社 半導体装置
US11581298B2 (en) * 2019-05-24 2023-02-14 Taiwan Semiconductor Manufacturing Company Limited Zero mask high density capacitor
DE112021007309T5 (de) * 2021-03-16 2024-01-04 Microchip Technology Incorporated Metall-isolator-metall-(mim)kondensator und dünnschichtwiderstand (tfr) in einer integrierten schaltungsstruktur
US11552011B2 (en) 2021-03-16 2023-01-10 Microchip Technology Incorporated Metal-insulator-metal (MIM) capacitor and thin-film resistor (TFR) formed in an integrated circuit structure

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0989615A2 (de) * 1998-09-22 2000-03-29 Sharp Kabushiki Kaisha Halbleiterbauelement mit Kondensator und diesbezügliches Herstellungsverfahren
JP2001358304A (ja) * 2000-06-15 2001-12-26 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
WO2002017367A2 (en) * 2000-08-21 2002-02-28 Motorola, Inc. Semiconductor device having passive elements and method of making same
US20030011043A1 (en) * 2001-07-14 2003-01-16 Roberts Douglas R. MIM capacitor structure and process for making the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242553A (ja) 1985-08-20 1987-02-24 Fujitsu Ltd 半導体集積回路装置
JPH01223757A (ja) 1988-03-02 1989-09-06 Mitsubishi Electric Corp 半導体装置
US5917220A (en) * 1996-12-31 1999-06-29 Stmicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US6320213B1 (en) * 1997-12-19 2001-11-20 Advanced Technology Materials, Inc. Diffusion barriers between noble metal electrodes and metallization layers, and integrated circuit and semiconductor devices comprising same
KR100292819B1 (ko) * 1998-07-07 2001-09-17 윤종용 커패시터및그의제조방법
JP3199114B2 (ja) * 1998-11-06 2001-08-13 日本電気株式会社 半導体装置の製造方法
JP2001203329A (ja) 2000-01-18 2001-07-27 Toshiba Corp 半導体装置およびその製造方法
DE10008573A1 (de) * 2000-02-24 2001-09-13 Infineon Technologies Ag Halbleiterbauelement und Herstellungsverfahren
US6313003B1 (en) * 2000-08-17 2001-11-06 Taiwan Semiconductor Manufacturing Company Fabrication process for metal-insulator-metal capacitor with low gate resistance
JP2002217373A (ja) 2001-01-17 2002-08-02 Mitsubishi Electric Corp 半導体装置の製造方法及びその製造方法を用いて製造された半導体装置
US6709918B1 (en) * 2002-12-02 2004-03-23 Chartered Semiconductor Manufacturing Ltd. Method for making a metal-insulator-metal (MIM) capacitor and metal resistor for a copper back-end-of-line (BEOL) technology
JP2004303908A (ja) * 2003-03-31 2004-10-28 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0989615A2 (de) * 1998-09-22 2000-03-29 Sharp Kabushiki Kaisha Halbleiterbauelement mit Kondensator und diesbezügliches Herstellungsverfahren
JP2001358304A (ja) * 2000-06-15 2001-12-26 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
WO2002017367A2 (en) * 2000-08-21 2002-02-28 Motorola, Inc. Semiconductor device having passive elements and method of making same
US20030011043A1 (en) * 2001-07-14 2003-01-16 Roberts Douglas R. MIM capacitor structure and process for making the same

Also Published As

Publication number Publication date
US20070155147A1 (en) 2007-07-05
US7808077B2 (en) 2010-10-05
KR20060055489A (ko) 2006-05-23
KR100671112B1 (ko) 2007-01-17
EP1471566A2 (de) 2004-10-27
TW200423380A (en) 2004-11-01
KR20060035681A (ko) 2006-04-26
TWI334630B (en) 2010-12-11
US7538005B2 (en) 2009-05-26
US7190045B2 (en) 2007-03-13
KR100671111B1 (ko) 2007-01-17
CN1542968A (zh) 2004-11-03
KR20060034263A (ko) 2006-04-21
KR20040088349A (ko) 2004-10-16
US20090051007A1 (en) 2009-02-26
US20040253783A1 (en) 2004-12-16
JP2004303908A (ja) 2004-10-28
CN1300850C (zh) 2007-02-14

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