Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3105—After-treatment
  • H01L21/31051—Planarisation of the insulating layers
  • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
  • C08L101/00—Compositions of unspecified macromolecular compounds
  • C08L101/02—Compositions of unspecified macromolecular compounds characterised by the presence of specified groups, e.g. terminal or pendant functional groups
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09G—POLISHING COMPOSITIONS; SKI WAXES
  • C09G1/00—Polishing compositions
  • C09G1/02—Polishing compositions containing abrasives or grinding agents

Definitions

• the present invention relates to an additive composition, a slurry composition including the additive composition, and a method of polishing an object using the slurry composition. More particularly, the present invention relates to an additive composition including a salt of a polymer acid, a slurry composition including the additive composition, and chemical mechanical polishing of an object using the slurry composition.
• semiconductor device technologies have rapidly progressed. From a functional aspect, semiconductor devices should exhibit rapid operating speeds, large capacities, and high degrees of integration. To this end, manufacturing techniques have been developed to improve device performance and characteristics.
• CMP chemical mechanical polishing
• FIGS. 1A-1E are sectional views for explaining a method of manufacturing an STI structure using the conventional polishing method.
• a trench 12 is formed at the upper portion of a substrate 10 that is comprised of silicon.
• the trench 12 is formed via a photolithography process by using photoresist patterns as an etching mask.
• a polish stop layer 14 is formed on the trench 12 and the substrate 10.
• the polish stop layer 14 is a silicon nitride layer that is comprised of a silicon nitride material.
• the polish stop layer 14 is formed by a chemical vapor deposition method.
• a silicon oxide layer 16 is formed of silicon oxide material on the polish stop layer 14 so as to fill and bury the trench 12.
• the silicon oxide layer 16 is polished to expose the polish stop layer 14a formed under the silicon oxide layer 16 and on the substrate 10, but not on the trench 12. Accordingly, silicon oxide material 16a remains only in the recessed portion of the trench 12.
• the exposed polish stopping layer 14a is etched to expose the surface portion of the substrate 10.
• an STI structure 16b is formed on the substrate 10.
• an over-polishing technique is adopted for polishing a portion of the silicon nitride layer.
• the over-polishing utilizes the difference in polishing rates (i.e., removal rates) between the silicon oxide layer and the silicon nitride layer.
• the polishing rate of the silicon oxide layer is controlled to be faster than that of the silicon nitride layer.
• the difference in the polishing rate between the two layers is controlled by a slurry composition used during polishing.
• a slurry composition used during polishing.
• an oxide based slurry composition including silica as polishing particles is used for the over-polishing.
• the polishing rate of the silicon oxide layer is 4-5 faster times than that of the silicon nitride layer.
• FIG. 2 is a sectional view for explaining a dishing phenomenon generated during manufacturing of an STI structure by the conventional polishing method.
• This state is obtained after completing the over-polishing using the oxide based slurry composition.
• the silicon nitride layer 22 on the substrate 20 is exposed and the silicon oxide layer 24 remains only within the recessed portion of the trench.
• a dishing feature is generated around the mouth portion of the trench A. This dishing phenomenon occurs when the silicon oxide layer filled within the mouth portion of the trench A is polished.
• erosion occurs between the neighboring trench portions B through an over-polishing of the silicon nitride layer formed at the portion between the trench portions B. In particular, at the regions where the trench patterns are formed minutely, more severe dishing and erosion features are generated.
• Dishing and erosion is generated from low polishing selectivity, which is the ratio of the polishing rate of the silicon oxide layer to the polishing rate of the silicon nitride layer.
• the resultant non-planar surface features are factors which can result in defects when implementing subsequent processes.
• U.S. Pat. No. 6,114,249 issued to Canaperi et al. discloses a slurry composition having a silicon oxide layer polishing rate which is about 28 times faster than that of a silicon nitride layer.
• U.S. Pat. No. 5,938,505 issued to Morrison et al. also discloses a slurry composition in which a polishing rate of a silicon oxide layer can be controlled to about 30 times faster than that of a silicon nitride layer.
• Korean Laid-Open Patent Publication No. 2001-108048 discloses a slurry composition including a cerium oxide slurry, a dispersing agent as an additive and water in order to control a polishing rate of a silicon oxide layer to about 50 times faster than that of a silicon nitride layer.
• various methods concerning the development of the slurry composition have been reported to improve a polishing selectivity.
• a slurry composition exhibiting an even higher polishing selectivity is required for the manufacture of the more recent semiconductor devices requiring a design rule of 0.13 m or less. Disclosure of the Invention
• an additive composition for a slurry which includes a first salt of polymeric acid and a second salt of polymeric acid.
• the first salt of polymeric acid includes a first polymeric acid having a first weight average molecular weight and a first base material.
• the second salt of polymeric acid includes a second polymeric acid having a second weight average molecular weight and a second base material.
• a slurry composition includes an additive composition including a first salt and a second salt of polymeric acid, a polishing particle composition and water.
• the first salt of polymeric acid includes a first polymeric acid having a first weight average molecular weight and a first base material
• the second salt of polymeric acid includes a second polymeric acid having a second weight average molecular weight and a second base material.
• a method of polishing which includes first preparing a slurry composition including an additive composition.
• the additive composition includes a first and a second salt of polymeric acid.
• the first salt of polymeric acid includes a first polymeric acid having a first weight average molecular weight and a first base material
• the second salt of polymeric acid includes a second polymeric acid having a second weight average molecular weight and a second base material.
• the prepared slurry composition is provided onto a surface portion of a polishing pad. After that, a surface of a material to be processed is polished through contacting the surface of the material to be processed with the surface portion of the polishing pad.
• FIGS. 1A-1E are sectional views for explaining a manufacturing method of an STI structure by using a conventional polishing method
• FIG. 2 is a sectional view for explaining a dishing phenomenon generated during manufacturing an STI structure by the conventional polishing method
• FIG. 3 is a flow chart for explaining a polishing method according to an embodiment of the present invention.
• FIGS. 4 A and 4B are sectional views for explaining a polishing method illustrated in FIG. 3;
• FIG. 5 is a graph illustrating a zeta potential of a silicon oxide layer and a silicon nitride layer with respect to the pH of an additive composition of the present invention;
• FIG. 6 is a graph illustrating a polishing selectivity and a polishing rate with respect to the pH of a slurry composition of the present invention;
• FIG. 7 is a graph illustrating a polishing selectivity and a polishing rate of slurries having different additive compositions of the present invention
• FIGS. 8 and 9 are graphs illustrating a polishing selectivity and a polishing rate of slurries having different base material of the present invention
• FIG. 10 is a graph illustrating a polishing selectivity and a polishing rate slurries having different additive compositions of the present invention.
• FIG. 11 is a graph showing the number of scratches generated after completing polishing using a slurry composition including an additive composition and a base material according to the present invention
• FIG. 12 is a graph showing an erosion depth of a silicon nitride layer according to the kind of an additive composition
• FIG. 13 is a graph showing a dishing depth of a silicon oxide layer according to the kind of an additive composition
• FIG. 14 is a graph illustrating a polishing selectivity and a polishing rate of a silicon oxide layer according to an amount ratio of two components in an additive composition of the present invention
• FIG. 15 is a graph showing an erosion depth of a silicon nitride layer according to an amount ratio of two components in an additive composition of the present invention.
• FIG. 16 is a graph showing the number of defects generated after completing polishing using a slurry composition of the present invention.
• FIG. 17 is a graph for explaining the stability of a slurry composition according to the present invention. Best Mode For Carrying Out the Invention
• An additive composition of the present invention includes first and second salts of polymeric acid.
• the first salt of polymeric acid includes a fist polymeric acid having a first weight average molecular weight and a first base material
• the second salt of polymeric acid includes a second polymeric acid having a second weight average molecular weight that is larger than the first weight average molecular weight and a second base material.
• the preferred pH range of the additive composition of the present invention is from about 4.5 to about 8.8. When the pH of the additive composition is less than 4.5 or exceeds 8.8, the polishing selectivity is unpreferable. More preferably, the pH is in a range of from about 6.0 to about 7.5.
• An amount ratio of the first salt of polymeric acid by weight with respect to the second salt of polymeric acid by weight exceeds 1 and is less than 100.
• the amount of the first salt of polymeric acid is in a range of from about 50 to about 95% by weight and the amount of the second salt of polymeric acid is in a range of from about 5 to about 50% by weight based on the sum of the first and the second salts of polymeric acid.
• the productivity is decreased and the preparation of the additive composition is not advantageous.
• the polishing selectivity is unpreferable. Accordingly, the preferred amount of the first and the second salt of polymeric acid is in the above-described range. More preferably, the amount of the first salt of polymeric acid is in a range of from about 70 to about 90% by weight and the amount of the second salt of polymeric acid is in a range of from about 10 to about 30% by weight based on the sum of the first and the second salts of polymeric acid. Also, it is preferred that the first weight average molecular weight is from about 1,000 to about 10,000.
• the polishing selectivity is unpreferable, and when the first weight average molecular weight exceeds 10,000, the polishing rate is lowered and the viscosity of a slurry composition prepared by including the additive composition is increased.
• the second weight average molecular weight is 10 to 1,000 times larger than the first weight average molecular weight. Therefore, it is preferred that the second weight average molecular weight is in a range of from about 10,000 to about 10,000,000.
• the additive composition is preferably in the form of a liquid.
• the additive composition is a dispersed liquid type in which the first salt of polymeric acid and the second salt of polymeric acid are dispersed into water.
• the amount of water in the dispersion is in a range of from about 70 to about 99% by weight and the amount of the first and the second salt of polymeric acid is in a range of from about 1 to about 30% by weight.
• poly(acrylic acid), poly(acrylic acid-co-maleic acid), poly(methyl vinyl ether-alt-maleic acid), etc. can be used. Preferably, one of these compounds is used alone, but a mixture of two or more also can be used.
• poly(acrylic acid), poly(acrylic acid-co-maleic acid), poly(methyl vinyl ether-alt-maleic acid), etc. also can be used. Preferably, one of these compounds is used alone, but a mixture of two or more also can be used.
• poly(acrylic acid) is used which can obtained from the Aldrich Company as a product number of 192023, which is in an aqueous type, 181285 which is in a powder type, etc.
• the aqueous type product includes poly(acrylic acid) in an amount of about 60% by weight and poly(acrylic acid) has a molecular formula of [-CH 2 CH(CO 2 R)-]n (wherein, n is a positive integer and R denotes an alkyl group).
• the powder type product includes poly(acrylic acid) having a molecular formula of [-CH 2 CH(CO 2 H)-]n (wherein, n is a positive integer).
• poly(acrylic acid-co-maleic acid) which can be obtained from the Aldrich Company as a product number of 416053, which is in an aqueous type.
• the aqueous type product includes poly(acrylic acid-co-maleic acid) in an amount of about 60% by weight and poly(acrylic acid-co-maleic acid has a molecular formula of [-CH 2 CH(CO 2 H)]x[-CH(C ⁇ 2 H)CH(C ⁇ 2 H)-]y (wherein, x and y are positive integers).
• poly(methyl vinyl ether-alt-maleic acid) is used which can be obtained from the Aldrich Company as a product number of 191124, which is in a powder type.
• the powder type product includes poly(methyl vinyl ether-alt-maleic acid) having a molecular formula of [-CH 2 CH(OCH 3 )CH(CO 2 H)CH(CO 2 H)-]n (wherein, n is a positive integer).
• the first base material includes sodium hydroxide, potassium hydroxide, ammonium hydroxide, base amine compounds, etc. One of these may used alone or a mixture thereof may be used.
• the base amine compound includes tetra-methyl ammonium hydroxide (TMAH), tetra-ethyl ammonium hydroxide (TEAH), tetra-propyl ammonium hydroxide (TPAH) and tetra-butyl ammonium hydroxide (TBAH), etc. One of these may used alone or a mixture thereof may be used.
• the second base material includes sodium hydroxide, potassium hydroxide, ammonium hydroxide, base amine compounds, etc. One of these may used alone or a mixture thereof may be used.
• the base amine compound includes tetra-methyl ammonium hydroxide, tetra-ethyl ammonium hydroxide, tetra-propyl ammonium hydroxide, tetra-butyl ammonium hydroxide, etc. One of these may used alone or a mixture thereof may be used.
• a dispersed solution prepared by dispersing a first ammonium salt of poly(acrylic acid) including poly( acrylic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide, into water is used.
• a dispersed solution prepared by dispersing a first ammonium salt of poly( acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(methyl vinyl ether-alt-maleic acid) including poly(methyl vinyl ether-alt-maleic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide, into water is used.
• a dispersed solution prepared by dispersing a first ammonium salt of poly(acrylic acid-co-maleic acid) including poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide, into water is used.
• a dispersed solution prepared by dispersing a first ammonium salt of poly(acrylic acid-co-maleic acid) including poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(methyl vinyl ether-alt-maleic acid) including poly(methyl vinyl ether-alt-maleic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide, into water is used.
• a dispersed solution prepared by dispersing a first tetra-methyl ammonium salt of poly(acrylic acid-co-maleic acid) including poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 and tetra-methyl ammonium hydroxide and a second tetra-methyl ammonium salt of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 250,000 and tetra-methyl ammonium hydroxide, into water is used.
• additive compositions can be prepared according to requirements.
• the slurry composition of the present invention includes an additive composition of a slurry composition, a polishing particle composition, and water. That is, the slurry composition includes an additive composition including a first salt of polymeric acid which has a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid which has a second polymeric acid having a second weight average molecular weight and a second base material, a polishing particle composition having polishing particles, and water.
• the additive composition and the polishing particle composition may each include water prior to mixing.
• the preferred pH of the slurry composition is in a range of from about 5.0 to about 8.0. When the pH of the slurry composition is less than 5.0 or when exceeds 8.0, the polishing selectivity is unpreferable. More preferably, the pH is in a range of from about 6.5 to about 7.5.
• the preferred amount of the additive composition in the slurry composition is in a range of from about 0.3 to about 20% by weight. When the amount of the additive composition is less than 0.3% by weight or exceeds 20% by weight, the polishing selectivity is unpreferable.
• the preferred amount of the polishing composition in the slurry composition is in a range of from about 0.3 to about 20% by weight. When the amount of the polishing composition is less than 0.3% by weight, the polishing rate is lowered.
• the preferred amount of water in the slurry is in a range of from about 60 to about 99.4% by weight.
• amount of water is less than 60% by weight, the preparation of the slurry composition is not advantageous, and when the amount of water exceeds 99.4%, the polishing efficiency is deteriorated.
• the preferred slurry composition includes from about 0.3% by weight to about 20% by weight of the additive composition, from about 0.3% by weight to about 20% by weight of the polishing particle composition, and from about 60% by weight to about 99.4% by weight of water.
• the viscosity is less than 1.0 x 10 "3 PaS, or exceeds 3.0 x 10 "3 PaS, dispersing stability of the slurry composition is unpreferable.
• the dispersing stability is unpreferable, a uniform deposition of the slurry composition is not accomplished, thereby resulting a non-uniform polishing.
• the viscosity of the slurry composition also is affected by the first and the second weight average molecular weights of the first and the second salts of polymeric acid.
• the polishing particle is at least one selected from the group consisting of silica, alumina, cerium oxide and zirconium oxide.
• the additive composition includes a first ammonium slat of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide and the polishing particle composition includes cerium oxide as the polishing particle.
• the additive composition includes a first ammonium slat of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(methyl vinyl ether-alt-maleic acid) including poly(methyl vinyl ether-alt-maleic acid) having a weight average molecular weight of about 400,000 and ammonium hydroxide and the polishing particle composition includes cerium oxide as the polishing particle.
• the additive composition includes a first tetra-methyl ammonium salt of poly(acrylic acid-co-maleic acid) including poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 and tetra-methyl ammonium hydroxide and a second tetra-methyl ammonium salt of poly(acrylic acid) including poly(acrylic acid) having a weight average molecular weight of about 250,000 and tetra-methyl ammonium hydroxide and the polishing particle composition includes cerium oxide as the polishing particle.
• various types of slurry compositions can be prepared according to requirements.
• FIG. 3 is a flow chart for explaining a polishing method according to an embodiment of the present invention.
• the slurry composition includes an additive composition which contains a first salt of polymeric acid of a first polymeric acid having a first weight average molecular weight and a first base material, and a second salt of polymeric acid of a second polymeric acid having a second weight average molecular weight which is larger than the first weight average molecular weight and a second base material, a polishing particle composition including polishing particles, and water.
• the slurry composition includes an additive composition which contains a first ammonium salt of poly(acrylic acid) including poly(acrylic acid) of a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(acrylic acid) including poly(acrylic acid) of a weight average molecular weight of about 400,000 and ammonium hydroxide, a polishing particle composition including cerium oxide and water. More preferably, the polishing particle composition further includes a dispersing agent for a stable dispersion.
• the slurry composition includes an additive composition which contains a first ammonium salt of poly(acrylic acid) including poly(acrylic acid) of a weight average molecular weight of about 2,000 and ammonium hydroxide and a second ammonium salt of poly(methyl vinyl ether-alt-maleic acid) including poly(methyl vinyl ether-alt-maleic acid) of a weight average molecular weight of about 400,000 and ammonium hydroxide, a polishing particle composition including cerium oxide and water. More preferably, the polishing particle composition further includes a dispersing agent for a stable dispersion.
• the slurry composition is provided onto a polishing pad (step S32).
• the slurry composition is provided onto the polishing pad through a nozzle having an outlet positioned above the polishing pad.
• a material to be processed is brought into contact with the polishing pad in order to polish the surface of the material to be processed (step S34).
• the polishing rate of the first material layer and the polishing rate of the second material layer are different when using the slurry composition of the present invention.
• the polishing rate of the silicon oxide layer about 40-70 times faster than that of the silicon nitride layer.
• FIGS. 4 A and 4B are sectional views for explaining a polishing method illustrated in FIG. 3. Referring to FIG. 4A, a silicon nitride layer 42 and a silicon oxide layer 44 are subsequently integrated on a silicon substrate 40.
• the silicon oxide layer 44 is polished and the silicon nitride layer 42a is exposed.
• the polishing is implemented by a mechanical polishing using a polishing pad and a chemical polishing using the slurry composition. The polishing is performed so that a portion of the silicon nitride layer 42 is polished, that is, an over-polishing is executed.
• the over-polishing utilizes the difference in polishing rates between the silicon oxide layer 44 and the silicon nitride layer 42. That is, the polishing rate of the silicon oxide layer 44 is adjusted to be faster than the polishing rate of the silicon nitride layer 42 during the over-polishing. Accordingly, the silicon oxide layer 44 formed on the silicon nitride layer 42 can be completely polished by the over-polishing.
• the difference in the polishing rate is accomplished by the slurry composition used for the polishing.
• the slurry composition of the invention allows for the polishing rate of the silicon oxide layer 44 to be about 40-70 times faster than that of the silicon nitride layer 42.
• the polishing method using the slurry composition of the present invention can be advantageously applied to the fabrication of an STI structure.
• the polishing method can be applied for the fabrication of an STI structure of a semiconductor device having a design rule of about 0.13/tm or less.
• the high polishing selectivity minimizes the generation of dishing and erosion of the STI structure.
• a thin silicon nitride layer can be formed.
• the generation of defects during polishing can be minimized by using the slurry composition of the present invention. Further, the thickness of a polish stop layer such as the silicon nitride layer can be decreased. This sufficiently satisfies the recent requirement of fabricating a minute pattern of a semiconductor device.
• Example 1 1-i An aqueous poly(acrylic acid) solution available from Aldrich company by a product number of 192023, was prepared. A weight average molecular weight of poly( acrylic acid) was about 2,000. An amount of poly(acrylic acid) was 65% by weight based on the aqueous solution.
• a powder type poly(acrylic acid) available from Aldrich company by a product number of 181285 was prepared.
• a weight average molecular weight of poly(acrylic acid) was about 450,000.
• an additive composition of a slurry was prepared.
• the pH of the thus prepared additive composition was about 6.5 and the content of the non- volatile components was about 3% by weight.
• the content of the non- volatile components of the additive composition was measured by the following method.
• Example 2 An additive composition of a slurry was prepared in the same manner as in Example 1 except that a powder type poly(methyl vinyl ether-alt-maleic acid) available from Aldrich company by a product number of 191124 was used instead of poly(acrylic acid) introduced in the step 1-ii) of Example 1.
• the weight average molecular weight of the poly(methyl vinyl ether alt-maleic acid) was about 216,000.
• the pH of the thus prepared additive composition was about 6.5 and the total content of the non- volatile components was about 3% by weight.
• Example 3 An additive composition of a slurry was prepared in the same manner as in Example 1 except that an aqueous type poly(acrylic acid-co-maleic acid) available from Aldrich company by a product number of 414053 was used instead of poly(acrylic acid) introduced in the step 1-i) of Example 1.
• the weight average molecular weight of poly(acrylic acid-co-maleic acid) was about 3,000.
• the amount of poly(acrylic acid-co-maleic acid) in the aqueous solution was about 50% by weight.
• the pH of the thus prepared additive composition was about 6.5 and the total content of the non- volatile components was about 3% by weight.
• Example 4 An additive composition of a slurry was prepared in the same manner as in Example 1 except that poly(acrylic acid-co-maleic acid) used in Example 3 was used instead of poly(acrylic acid) introduced in the step 1-i) in Example 1 and poly(methyl vinyl ether-alt-maleic acid) used in Example 2 was used instead of poly(acrylic acid) introduced in the step 1-ii) of Example 1.
• the amount of poly(acrylic acid-co-maleic acid) in the aqueous solution was about 50% by weight.
• the pH of the thus prepared additive composition was about 6.5 and the total content of the non-volatile components was about 3% by weight.
• Example 5 An additive composition of a slurry was prepared in the same manner as in
• Example 1 except that poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 was used instead of poly(acrylic acid) introduced in the step 1-i) in Example 1 and poly(acrylic acid) having a weight average molecular weight of about 250,000 was used instead of poly(acrylic acid) introduced in the step 1-ii) of Example 1. Further, tetra-methyl ammonium hydroxide was used as the base material instead of ammonium hydroxide used in Example 1. The pH of the thus prepared additive composition was about 6.5 and the total content of the non- volatile components was about 3% by weight.
• Example 6 An additive composition prepared by Example 1 was used for the preparation of a slurry composition. Cesium oxide slurry composition available from Hitachi Co. by a product name of HS8005 was used as for the polishing particle composition. Then the polishing particle composition, the additive composition and water were mixed at a mixing ratio of 1 :3:3 by volume to prepare a slurry composition. The pH of the thus prepared slurry composition was about 7J.
• Example 7 An additive composition prepared by Example 5 was used for the preparation of a slurry composition. Cesium oxide slurry composition available from Hitachi Co. by a product name of HS8005 was used as for the polishing particle composition. Then the polishing particle composition, the additive composition and water were mixed at a mixing ratio of 1 :4:3 by volume to prepare a slurry composition. The pH of the thus prepared slurry composition was about 7.0 ⁇ 0.5.
• a first material to be processed was prepared on which a silicon oxide layer having about 6,OO ⁇ A thickness was formed.
• a second material to be processed was prepared on which a silicon nitride layer having about 1,500 A thickness was formed.
• the first and the second materials were, respectively, polished by using the slurry composition prepared by Example 6 and using a polishing apparatus of STRASBAUGH 6EC.
• the polishing condition are illustrated in the following Table 1:
• the polishing rate was obtained by the following method. First, the thickness of the silicon oxide layer (DI) and the thickness of the silicon nitride layer (D2) were measured before implementing the polishing. Also, the thickness of the silicon oxide layer (D3) and the thickness of the silicon nitride layer (D4) were measured after implementing the polishing. Then, the thickness difference of each layer, D1-D3 for the silicon oxide layer and D2-D4 for the silicon nitride layer was, respectively, divided by the unit polishing time to obtain the polishing rate. At this time, the thickness of the layer was measured by means of an Opti-probe for 49 points.
• the polishing selectivity represented by the ratio of the polishing rate of the silicon oxide layer with respect to that of the silicon nitride layer, was about 70: 1.
• a silicon nitride layer and a silicon oxide layer were subsequently formed.
• the trench had a depth of about 3,50 ⁇ A.
• the silicon nitride layer had a thickness of about 1 ,000A and was continuously formed on the side wall portion of the trench, on the bottom portion of the trench and on the surface of the silicon substrate.
• the silicon oxide layer was formed on the silicon nitride layer to a thickness of about 8,OO ⁇ A. The silicon oxide layer completely filled the recessed portion of the trench.
• a pre-polishing was implemented for about 1 minute by using a slurry composition prepared by diluting SS25 available from CABOT company to about 12%.
• the pre-polishing was executed to somewhat lessen the step portion generated after forming the silicon oxide layer.
• polishing was implemented for 3 minutes with an interval of 30 seconds according to the same polishing method described in Experiment 1. After completing the polishing, the silicon oxide layer remained in the recessed portion of the trench and the silicon nitride layer having a thickness of about 95 ⁇ A remained on the substrate. Then, the silicon nitride layer was etched to form an STI structure.
• Polishing characteristics The additive composition included in the slurry composition selectively makes a bond with the silicon nitride layer during polishing and, as a result, the polishing of the silicon nitride layer is restrained.
• FIG. 5 is a graph illustrating a zeta potential of a silicon oxide layer and a silicon nitride layer with respect to the pH of an additive composition of the present invention.
• the zeta potential of the silicon nitride layer (D) is higher than that of the silicon oxide layer ( ) through the whole range of the pH of the slurry composition.
• the zeta potential of the silicon oxide layer is negative, and the zeta potential of the silicon nitride layer is positive. Therefore, the restraining of the polishing of the silicon nitride layer can be effectively accomplished.
• FIG. 6 is a graph illustrating a polishing selectivity and a polishing rate with respect to the pH of a slurry composition of the present invention. The polishing rates of the silicon nitride layer and the silicon oxide layer are illustrated. The slurry composition prepared by Example 6 was used while changing the pH value.
• the polishing rate of the silicon oxide layer was about 500A/min while the polishing rate of the silicon nitride layer was about 50A/min. Therefore, it can be noted that the polishing selectivity of the silicon oxide layer to the silicon nitride layer is about
• the polishing rate of the silicon oxide layer was about l,800A/min while the polishmg rate of the silicon nitride layer was about 6 ⁇ A/min. Therefore, it can be noted that the polishing selectivity of the silicon oxide layer to the silicon nitride layer is about 30: 1.
• the polishing rate of the silicon oxide layer was about 3,30 ⁇ A/min while the polishing rate of the silicon nitride layer was about 55A/min. Therefore, it can be noted that the polishing selectivity of the silicon oxide layer to the silicon nitride layer is about 60: 1.
• the polishing rate of the silicon oxide layer was about 3,50 ⁇ A/min while the polishing rate of the silicon nitride layer was about lOOA/min. Therefore, it can be noted that the polishing selectivity of the silicon oxide layer to the silicon nitride layer is about 35:1.
• the polishing rate of the silicon oxide layer was about 3,000A/min while the polishing rate of the silicon nitride layer was about 15 ⁇ A/min. Therefore, it can be noted that the polishing selectivity of the silicon oxide layer to the silicon nitride layer is about 20:1.
• polishing rate of the silicon oxide layer is lowered when the pH of the slurry composition is decreased to the acid range, while the polishing rate of the silicon nitride layer is increased when the pH of the slurry composition is increased to the base range.
• an appropriate pH range of the slurry composition is from about 5.0 to about 8.0.
• FIG. 7 is a graph illustrating a polishing selectivity and a polishing rate for different additive compositions of the present invention.
• a polishing rate of a silicon nitride layer and a polishing rate of a silicon oxide layer are also illustrated.
• result I was obtained after polishing the silicon oxide layer and the silicon nitride layer by using a slurry composition including an additive composition containing an ammonium salt of poly(acrylic acid).
• the additive composition has a pH of about 6.5 and a weight average molecular weight of poly(acrylic acid) was about 2,000.
• the polishing rate of the silicon oxide layer was about 3,700A/min and the polishing rate of the silicon nitride layer was about 57A/min. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 65: 1.
• Result LI was obtained after polishing the silicon oxide layer and the silicon nitride layer by using a slurry composition including an additive composition having an ammonium salt of poly(acrylic acid-co-maleic acid).
• the additive composition has a pH of about 6.5 and a weight average molecular weight of poly(acrylic acid-co-maleic acid) was about 2,000.
• the polishing rate of the silicon oxide layer was about 3, 600 A/min and the polishing rate of the silicon nitride layer was about 65 A/min. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 55: 1.
• Result HI was obtained after polishing the silicon oxide layer and the silicon nitride layer by using a slurry composition including an additive composition having an ammonium salt of poly(methyl vinyl ether-alt-maleic acid).
• the additive composition has a pH of about 6.5 and a weight average molecular weight of poly(methyl vinyl ether-alt-maleic acid) was about 2,000.
• the polishing rate of the silicon oxide layer was about 2,000 A/min and the polishing rate of the silicon nitride layer was about 28A/min. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 70:1.
• the additive composition including poly(acrylic acid), poly(acrylic acid-co-maleic acid) or poly(methyl vinyl ether-alt-maleic acid) shows suitable characteristics for use in the preparation of a slurry composition of the present invention.
• FIG. 8 is a graph illustrating a polishing selectivity and polishing rates when using a slurry composition including sodium hydroxide and ammonium hydroxide as a base material.
• the slurry composition used for the polishing includes the same components prepared by Example 6 except that the above-described base material and poly(acrylic acid) having a weight average molecular weight of about 2,000 are included.
• the polishing rate of the silicon oxide layer was about 3, 600 A/min and the polishing rate of the silicon nitride layer was about 120 A/min when a slurry composition including sodium hydroxide as the base material, was used.
• the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 30:1.
• the polishing rate of the silicon oxide layer was about 3, 700 A/min and the polishing rate of the silicon nitride layer was about 5 ⁇ A/min when a slurry composition including ammonium hydroxide as the base material, was used.
• polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 75: 1.
• FIG. 9 is a graph illustrating a polishing selectivity and polishing rates when using a slurry composition including potassium hydroxide and ammonium hydroxide as a base material.
• the slurry composition used for the polishing includes the same components prepared by Example 6 except that the above-described base material and poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 are included.
• the polishing rate of the silicon oxide layer was about 4, 800 A/min and the polishing rate of the silicon nitride layer was about 160 A/min when a slurry composition including potassium hydroxide as the base material, was used.
• the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 30: 1.
• the polishing rate of the silicon oxide layer was about 4,50 ⁇ A/min and the polishing rate of the silicon nitride layer was about 75A/min when a slurry composition including ammonium hydroxide as the base material, was used.
• FIG. 10 is a graph illustrating a polishing selectivity and a polishing rates for different additive compositions, which include TMAH, TEAH, TPAH or TBAH.
• the slurry composition used for the polishing includes the same components prepared by Example 6 except that the above-described base material and poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 are included.
• the polishing rate of the silicon oxide layer was about 4,50 ⁇ A/min and the polishing rate of the silicon nitride layer was about 75A/min when a slurry composition including TMAH as the base material, was used. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 60: 1.
• the polishing rate of the silicon oxide layer was about 3, 950 A/min and the polishing rate of the silicon nitride layer was about 62A/min when a slurry composition including TEAH as the base material, was used. Accordingly, it was found that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 64: 1.
• the polishing rate of the silicon oxide layer was about 2,95 ⁇ A/min and the polishing rate of the silicon nitride layer was about 40 A/min when a slurry composition including TPAH as the base material, was used. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 74:1.
• the polishing rate of the silicon oxide layer was about 2,55 ⁇ A/min and the polishing rate of the silicon nitride layer was about 31 A/min when a slurry composition including TBAH as the base material, was used. Accordingly, it can be noted that the polishing selectivity of the silicon oxide layer with respect to the silicon nitride layer is about 82:1.
• FIG. 11 is a graph showing the number of scratches formed after polishing using a slurry composition including an additive composition and a base according to the present invention.
• Slurry compositions of type 100, type 110 and type 120 are used for the polishing.
• the slurry composition of type 100 includes an additive composition containing an ammonium salt of poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000.
• the slurry composition of type 110 includes an additive composition containing an ammonium salt of poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 and an ammonium slat of poly(acrylic acid) having a weight average molecular weight of about 250,000.
• the slurry composition of type 120 includes an additive composition containing a tetra-methyl ammonium salt of poly(acrylic acid-co-maleic acid) having a weight average molecular weight of about 3,000 and a tetra-methyl ammonium salt of poly(acrylic acid) having a weight average molecular weight of about 250,000.
• the result in FIG. 11 was obtained after completing polishing of two substrates for each type of the slurry composition.
• the number of the scratches after completing the polishing was 91 and 109 when using the slurry composition of type 100.
• the number of the scratches after completing the polishing was 78 and 88 when using the slurry composition of type 110.
• the number of the scratches after completing the polishing was 49 and 59 when using the slurry composition of type 120.
• the slurry composition including tetra-methyl ammonium salt as the base material is preferably applied for the polishing. Further, when considering the polishing rate, a slurry composition including a base amine compound for the base material is preferably used.
• FIG. 12 is a graph showing an erosion depth of a silicon nitride layer for different additive compositions.
• a slurry composition having the same components prepared by Example 6 was used, except that poly( acrylic acid) having a weight average molecular weight of about 2,000 (first composition), and a slurry composition prepared by Example 6 were used (second composition) for the measure of the erosion depth when fabricating an STI structure.
• the designated result exhibits the erosion depth of a silicon nitride layer when fabricating the STI structure by using the first and the second compositions.
• the area occupied by the silicon nitride layer is about 20% of the total area of the STI structure.
• Line width means a distance from a mouth to the neighboring mouth of a trench of the STI structure.
• the thickness of the silicon nitride layer was about 1,000A.
• polishing was implemented for 120 seconds by using the first composition ( ) and the second composition ( ⁇ ).
• similar eroding results were obtained for the first and the second compositions when the line width was 4 m and 8 m.
• the line width was 16 m
• a better eroding result was obtained when using the first composition
• the line width was 64 m
• a better eroding result was obtained when using the second composition.
• polishing was implemented for 150 seconds by using the first composition (D) and the second composition ( ⁇ ). Referring to the graph, the second composition exhibits a better eroding result than the first composition over the whole range of the line width. Also, polishing was implemented for 180 seconds by using the first composition ( ⁇ ) and the second composition (A). Referring to the graph, the second composition exhibits a better eroding result than the first composition over the whole range of the line width.
• the additive composition including both of the first salt of the first polymeric acid having the first weight average molecular weight and the second salt of the second polymeric acid having the second weight average molecular weight which is larger than the first weight average molecular weight, exhibits favorable polishing effects.
• FIG. 13 is a graph showing a dishing depth of a silicon oxide layer for different additive compositions.
• Line width designates a distance from a mouth to the neighboring mouth of a trench of the STI structure.
• polishing was implemented for 120 seconds by using the first composition ( ) and the second composition ( ⁇ ). Referring to the graph, the first and the second compositions exhibit similar dishing results over the whole range of the line width.
• polishing was implemented for 150 seconds by using the first composition (D) and the second composition ( ⁇ ).
• the second composition exhibits a better dishing result than the first composition over the whole range of the line width.
• polishing was implemented for 180 seconds by using the first composition ( ⁇ ) and the second composition (A).
• the second composition exhibits a better dishing result than the first composition over the whole range of the line width.
• the additive composition including both of the first salt of the first polymeric acid having the first weight average molecular weight and the second salt of the second polymeric acid having the second weight average molecular weight which is larger than the first mean molecular weight, exhibits favorable polishing effects.
• FIG. 14 is a graph illustrating a polishing selectivity and a polishing rate of a silicon oxide layer according to an amount ratio of two components in an additive composition of the present invention.
• the polishing rate is designated by D and the polishing selectivity is designated by ⁇ _>.
• FIG. 15 is a graph for showing an erosion depth of a silicon nitride layer according to an amount ratio of two components in an additive composition of the present invention.
• the polishing rate and the polishing selectivity of the silicon oxide layer and the erosion depth of the silicon nitride layer are measured when fabricating an STI structure.
• the STI structure was fabricated by using a slurry composition including the same components prepared by Example 6 except for changing the amounts of poly(acrylic acid) having a weight average molecular weight of about 2,000 (a first material) and poly(acrylic acid) having a weight average molecular weight of about 450,000 (a second material), was used.
• the amount ratio means the ratio of the first material to the second material.
• the area occupied by the silicon nitride layer is about 20% of the whole area of the STI structure. Referring to FIG.
• the polishing rate and the polishing selectivity of the silicon oxide layer is increased as the amount ratio of the additive composition increases.
• the erosion depth of the silicon nitride layer is decreased as the amount ratio of the additive composition increases.
• the preferred amount ratio of the first material and the second material is about 100 or less.
• the polishing rate of the silicon oxide layer is about 2,000 A/min.
• the polishing rate is about 2,000A/min or less, the productivity is deteriorated. Therefore, it is preferred that the amount ratio of the first material to the second material in the additive composition exceeds 1.
• the amount of the first salt of the first polymeric acid is in a range of from about 50 to about 95% by weight and the amount of the second salt of the second polymeric acid is in a range of from about 5 to about 50% by weight.
• FIG. 16 is a graph showing the number of defects generated after polishing using a slurry composition of the present invention.
• the scratch number includes the total number of defects and number of ⁇ -scratch defects mainly generated by the polishing. The number of the scratches was measured by using KLA after completing the polishing and then washing the processed material using diluted HF to 1% for 100 seconds.
• a slurry composition of type 1 is the same slurry composition prepared by Example 6, except that poly(acrylic acid) having a weight average molecular weight of about 2,000 was used for the preparation of the additive composition.
• a slurry composition of type 2 is the same slurry composition prepared by Example 6.
• a slurry composition of type 3 is the same slurry composition prepared by Example 6, except that poly(acrylic acid-co-maleic acid) having a weight average molecular weight having about 2,000 and poly(acrylic acid) having a weight average molecular weight having about 450,000 were used for the preparation of the additive composition.
• the type 2 and the type 3 compositions show better results than the type 1 composition. Accordingly, the additive composition including both of the first salt and the second salt of the polymeric acid is preferably used when considering the defects generated during the polishing.
• FIG. 17 is a graph explaining the stability of a slurry composition according to the present invention.
• the arbitrary height is designated while standing the slurry composition under air.
• a slurry composition of type 10 ( ⁇ ->) is the same slurry composition prepared by Example 6, except that poly(acrylic acid) having a weight average molecular weight of about 2,000 is used for preparing an additive composition.
• a slurry composition of type 11 (D) is the same slurry composition prepared by Example 6.
• the arbitrary height is obtained by dividing the height of a target slurry composition stood for a given time under air by an initial height. The lowering of the arbitrary height is caused by an agglomeration of polishing particles in the slurry composition.
• a preferred additive composition includes the first salt of polymeric acid and the second salt of polymeric acid.
• a preferred slurry composition includes an additive composition containing the first salt of polymeric acid and the second salt of polymeric acid.
• a preferred polishing method is implemented by using the slurry composition.
• a polishing process that exhibits a high polishing selectivity can be realized by using the slurry composition of the present invention. Therefore, the polishing method can be positively applied for the manufacture of a semiconductor device having a minute pattern, such as semiconductor devices which require a design rule of 0.13 m or less. Device reliability and manufacturing productivity can thus be improved.

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