EP1323195A1 - Electrode et trace conducteur pour composants organiques et procede de production correspondant - Google Patents
Electrode et trace conducteur pour composants organiques et procede de production correspondantInfo
- Publication number
- EP1323195A1 EP1323195A1 EP01978173A EP01978173A EP1323195A1 EP 1323195 A1 EP1323195 A1 EP 1323195A1 EP 01978173 A EP01978173 A EP 01978173A EP 01978173 A EP01978173 A EP 01978173A EP 1323195 A1 EP1323195 A1 EP 1323195A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive
- electrode
- conductor track
- functional polymer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004020 conductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920001002 functional polymer Polymers 0.000 claims abstract description 20
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 230000005669 field effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 23
- 229920000767 polyaniline Polymers 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 21
- 239000002904 solvent Substances 0.000 claims description 14
- 238000007639 printing Methods 0.000 claims description 10
- 239000011368 organic material Substances 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 5
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims description 2
- 230000009849 deactivation Effects 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000012286 potassium permanganate Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 19
- 239000000758 substrate Substances 0.000 description 17
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 15
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 9
- 239000011159 matrix material Substances 0.000 description 7
- 150000001412 amines Chemical class 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005595 deprotonation Effects 0.000 description 2
- 238000010537 deprotonation reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000007649 pad printing Methods 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical class CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/211—Changing the shape of the active layer in the devices, e.g. patterning by selective transformation of an existing layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Definitions
- the invention relates to electrodes and / or conductor tracks for organic components, in particular for components such as field effect transistors (OFETs), photoelectronic components and / or light emitting diodes (OLEDs), which have conductive and finely structured electrode tracks.
- OFETs field effect transistors
- OLEDs light emitting diodes
- the object of the present invention is to rationalize the process steps in the production of long-lasting, high-resolution conductive tracks and / or electrodes of organic functional layers on a substrate.
- the invention relates to an electrode and / or conductor track (2 l ) which can be produced by treating an organic functional polymer with a chemical compound.
- the invention also relates to a method for producing an electrode and / or a conductor track by treating an organic functional polymer with a chemical compound.
- the electrode and / or conductor track is produced by partial activation or deactivation of the organic functional polymer.
- An advantageous embodiment of the invention is a method for producing high-resolution, conductive structures on a substrate by applying a conductive organic layer and producing a non-conductive organic matrix in the conductive organic layer by structuring, which is characterized in that the non-conductive matrix is subsequently connected selectively removed with a non-basic solvent or using oxidative etching.
- the conductive structures formed that is to say webs or fingers on the substrate, are thus effectively diffused from being destroyed by the non-conductive areas. protected basic species.
- the structures formed are not sensitive to air, which guarantees a long service life of all-organic, optoelectronic components produced from them, such as field effect transistors (OFET) or light-emitting diodes (OLED).
- OFET field effect transistors
- OLED light-emitting diodes
- substrate is understood to mean, for example, a flexible substrate such as a carrier film. You or a non-flexible substrate may or may not already have one or more functional layers.
- the conductive organic layer is preferably applied to the substrate by knife coating, spraying, spin coating or by screen printing. Since the polymer materials can be applied from the solution, an extremely homogeneous thin layer is produced in particular by the latter method.
- the conductive organic polymer is preferably polyaniline doped with, for example, camphorsulfonic acid (CSA). All conductive organic materials that are selectively deactivated can be used here. In particular, other conductive polymers can also be used, provided they change to the non-conductive state under the action of a base or can be etched away oxidatively.
- CSA camphorsulfonic acid
- the non-conductive organic matrix is formed in selected areas by deprotonation of the conductive layer.
- the conductive layer is first made of doped polyaniline (PANI) or another conductive organic material such as polyethylene dioxythiophene (PEDOT).
- PANI doped polyaniline
- PEDOT polyethylene dioxythiophene
- the photoresist is made base-soluble in selected areas by structured exposure, for example using a shadow mask, and these base-soluble areas are detached by a basic solvent.
- An advantage of this procedure is that the underlying, that is, exposed, polyaniline layer is deprotonated by the basic solvent and thus becomes non-conductive.
- Liquid tetrabutylammonium compounds or solutions thereof can be used as basic solvents.
- Another basic solvent or developer is, for example, "AZ 1512 HS" (Merck).
- the remaining photoresist is then stripped off with a suitable solvent, such as, for example, lower alcohols or etons.
- a suitable solvent such as, for example, lower alcohols or etons.
- the non-conductive matrix can be extracted with a non-basic solvent before or after this step.
- Dimethylformamide which has been freshly distilled can be used in particular as the non-basic solvent. This ensures that this solvent is free of amines. At the same time, this ensures that deprotonation of the fine conductive fingers by the amine is prevented. If the non-conductive matrix, e.g. oxidative, etched away, this step must be done before removing the photoresist.
- the organic functional layer is applied in a conductive and planar manner to a substrate. At the points where this layer of organic functional polymer is treated with the chemical compound, it is converted into its non-conductive form.
- the organic functional polymer is treated by printing with the chemical compound.
- Preferred printing processes for this are offset printing, screen printing, pad printing and / or micro-contact printing ( ⁇ CP printing).
- Printing with the chemical compound causes a drastic change in the conductivity in the organic functional polymer.
- a fine structuring of the functional layer can be achieved through the printing technique. The resolution depends on the performance of the respective printing process.
- the pressure can e.g. with a stamp, as with pad printing or with a stamp roll in a continuous process.
- the chemical compound that deactivates or activates the organic functional polymer is absorbed in the stamp.
- the stamp can be made of an absorbent silicone elastomer.
- the chemical compound is preferably a base such as e.g. an amine, a hydroxide etc.
- a base such as e.g. an amine, a hydroxide etc.
- all bases, and especially those that deprotonate, can be used.
- organic material or "organic functional polymer” here encompasses all types of organic, organometallic and / or organic-inorganic plastics (hybrids), in particular those which are described in English e.g. With
- plastics are called. These are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, but rather is also due to the widespread use of e.g. Silicones thought. Furthermore, the ter should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but instead the use of
- a thin layer of conductive polyaniline is produced by casting, spin coating, knife coating, etc.
- a basic compound amine, hydroxide
- the PANI is deprotonated at the point of contact with the base, as a result of which it loses its conductivity.
- the entire layer can still be rinsed and dried and thus fixed. The final rinsing can selectively remove non-protonated, non-conductive areas of the functional polymer.
- a combination of the printing process with radiation and / or exposure through a shadow mask is also possible.
- the method according to the invention is particularly suitable for the production of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs) or photoelectronic components in which conductive and finely structured electrodes or electrode tracks are required.
- OFETs organic field effect transistors
- OLEDs organic light emitting diodes
- photoelectronic components in which conductive and finely structured electrodes or electrode tracks are required.
- a conductive layer 2 is formed from a substrate 1, which is formed, for example, from polyethylene, polyimide, but preferably polyterephthalate film Camphorsulfonic acid (CSA) doped polyaniline (PANI), for example by spin coating, applied homogeneously.
- a thin layer 4 of a positive photoresist is then spin-coated onto this conductive layer 2, for example by spin coating, which is then exposed to UV light through a shadow mask 5.
- the photoresist is made soluble by a chemical reaction, in particular here made soluble in base.
- the entire substrate is then immersed in a basic solvent, such as a tetrabutylammonium compound or AZ 1512
- the substrate can be subsequently placed in an aqueous camphorsulfonic acid (CSA) solution for a short time in order to saturate the surface of the PANI electrodes or electrode tracks with camphorsulfonic acid, which ensures high conductivity.
- CSA camphorsulfonic acid
- the non-conductive matrix could also be extracted with dimethylformamide (DMF), which has already been treated with camphorsulfonic acid (CSA).
- Another possibility is to immerse the substrate in a reactive etching solution after the development of the photoresist layer, so that the exposed areas (3) are removed by oxidation.
- a reactive etching solution for example, a mixture of 250ml centered sulfuric acid used with an aqueous solution of 7.5g potassium permanganate in 100ml water.
- a positive photoresist it is of course also possible to use a negative photoresist which is crosslinked in the exposed areas by UV radiation. The unexposed areas remain soluble and can be removed with a suitable solvent. Suitable photoresist systems are described, for example, in Kirk-Othmer (3.) 17, pages 680 to 708.
- the method according to the invention can thus reliably produce high-resolution conductive structures on substrates which have a long service life.
- the invention relates to electrodes for organic components, in particular for components such as field effect transistors (0-FETs) and / or light-emitting diodes (OLEDs), which have conductive and finely structured electrode tracks.
- the electrode / conductor track is produced by simply contacting a conductive or non-conductive layer of organic material with a chemical compound, because the chemical compound deactivates or activates the layer of organic material at the contact point, i.e. makes conductive or non-conductive.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Abstract
L'invention concerne des électrodes pour composants organiques, notamment pour composants tels que des transistors à effet de champ (OFET) et/ou des diodes électroluminescentes (OLED), qui comportent des tracés d'électrodes finement structurés, conducteurs et à haute résolution. L'électrode et/ou le tracé conducteur sont obtenus par traitement d'une couche conductrice ou non conductrice de polymère organique de fonction avec un composé chimique, étant donné que le composé chimique désactive ou active la couche de matière organique au point de contact, c.-à-d. qu'il la rend conductrice ou non conductrice. Les zones non conductrices de la couche peuvent être enlevées.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10047171 | 2000-09-22 | ||
DE10047171A DE10047171A1 (de) | 2000-09-22 | 2000-09-22 | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
DE10122213 | 2001-05-08 | ||
DE10122213A DE10122213C1 (de) | 2001-05-08 | 2001-05-08 | Verfahren zur Erzeugung von hochaufgelösten leitfähigen Strukturen |
PCT/DE2001/003645 WO2002025750A1 (fr) | 2000-09-22 | 2001-09-20 | Electrode et trace conducteur pour composants organiques et procede de production correspondant |
Publications (1)
Publication Number | Publication Date |
---|---|
EP1323195A1 true EP1323195A1 (fr) | 2003-07-02 |
Family
ID=26007148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP01978173A Withdrawn EP1323195A1 (fr) | 2000-09-22 | 2001-09-20 | Electrode et trace conducteur pour composants organiques et procede de production correspondant |
Country Status (4)
Country | Link |
---|---|
US (1) | US20040026121A1 (fr) |
EP (1) | EP1323195A1 (fr) |
JP (1) | JP2004512675A (fr) |
WO (1) | WO2002025750A1 (fr) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
JP4841841B2 (ja) | 2002-10-02 | 2011-12-21 | レオナード クルツ シュティフトゥング ウント コンパニー カーゲー | 有機半導体付フィルム |
DE10349963A1 (de) | 2003-10-24 | 2005-06-02 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung einer Folie |
DE102004012319A1 (de) * | 2004-03-11 | 2005-09-22 | H.C. Starck Gmbh | Funktionsschichten für optische Anwendungen auf Basis von Polythiophenen |
DE102006039927A1 (de) * | 2006-08-25 | 2008-03-06 | Printed Systems Gmbh | Navigationsgerät |
KR20140057262A (ko) * | 2011-07-08 | 2014-05-12 | 헤레우스 프레셔스 메탈스 게엠베하 운트 코. 카게 | 적층체의 제조 공정 및 이로부터 얻을 수 있는 마스킹이 없는 적층체 |
WO2013146750A1 (fr) * | 2012-03-30 | 2013-10-03 | アルプス電気株式会社 | Procédé de fabrication de substrat à formation de motif conducteur |
DE102013112253A1 (de) | 2013-11-07 | 2015-05-07 | Osram Oled Gmbh | Optoelektronisches Bauelement, Verfahren zum Betreiben eines optoelektronischen Bauelementes und Verfahren zum Herstellen eines optoelektronischen Bauelementes |
CN104851524A (zh) * | 2015-05-28 | 2015-08-19 | 京东方科技集团股份有限公司 | 透明导电薄膜的制造方法和透明导电薄膜 |
JP6545401B2 (ja) * | 2016-04-06 | 2019-07-17 | コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. | インプリントリソグラフィースタンプの作製方法及び使用方法 |
US10433689B2 (en) * | 2016-08-29 | 2019-10-08 | Omachron Intellectual Property Inc. | Surface cleaning apparatus |
US12055737B2 (en) * | 2022-05-18 | 2024-08-06 | GE Precision Healthcare LLC | Aligned and stacked high-aspect ratio metallized structures |
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US3512052A (en) * | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
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US3955096A (en) * | 1975-06-19 | 1976-05-04 | E. I. Du Pont De Nemours And Company | Implicit ratio computer for sequential signals |
JPS54101176A (en) * | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
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Title |
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See references of WO0225750A1 * |
Also Published As
Publication number | Publication date |
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JP2004512675A (ja) | 2004-04-22 |
WO2002025750A1 (fr) | 2002-03-28 |
US20040026121A1 (en) | 2004-02-12 |
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