JP4841841B2 - 有機半導体付フィルム - Google Patents
有機半導体付フィルム Download PDFInfo
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- JP4841841B2 JP4841841B2 JP2004540528A JP2004540528A JP4841841B2 JP 4841841 B2 JP4841841 B2 JP 4841841B2 JP 2004540528 A JP2004540528 A JP 2004540528A JP 2004540528 A JP2004540528 A JP 2004540528A JP 4841841 B2 JP4841841 B2 JP 4841841B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Description
剥離層12(分離層):
トルエン 99.5部
エステルワックス(滴点:90℃) 0.5部
ラッカー層13(保護ラッカー層):
メチルエチルケトン 61.0部
ジアセトンアルコール 9.0部
メチルメタンアクリレート(Tg:122℃) 18.0部
ポリエチレン分散液(キシレン中23%)(軟化点:140℃) 7.5部
高分子分散添加剤(40%,アミン指数:20) 0.5部
増量剤(ケイ酸アルミニウム) 20.0部
ラッカー層18(中間層):
メチルエチルケトン 40.0部
トルエン 22.0部
エチレンビニルアセテートターポリマー(融点:60℃) 2.5部
ポリ塩化ビニル(Tg:89℃) 5.5部
ポリ塩化ビニル(Tg:40℃) 3.0部
分散添加剤(50%,酸価:51) 1.0部
二酸化チタン(d=3.8〜4.2g/cm3) 26.0部
接着層20:
メチルエチルケトン 55.0部
トルエン 12.5部
エタノール 3.5部
ポリ酢酸ビニル(軟化点:80℃) 6.0部
ブチル-/メチルメタクリレート(Tg:80℃) 8.0部
エチルメタクリル樹脂(Tg:63℃) 3.0部
メタクリレートコポリマー(Tg:800℃) 5.0部
不飽和ポリエステル樹脂(軟化点:103℃) 3.5部
二酸化ケイ素 3.5部
にしたがって作成することができる。
2 転移層部
11 キャリアフィルム
12 剥離層
13,18 ラッカー層
14 ゲート電極
15 絶縁層
16 有機半導体材料層
17 ソース電極
19 ドレイン電極
20 接着層
Claims (28)
- 有機半導体技術を用いて作成される少なくとも1つのデバイスを有するフィルム(1,3,6,7,8,9)であって、前記デバイスが複数の層を含み、該複数の層が電気的機能層を含んでいるフィルム(1,3,6,7,8,9)において、
前記デバイスの1つまたはそれより多くの層に熱転写またはUV転写により空間構造が設けられており、構造深さが転写されるべき層(42)の厚さ以上の前記空間構造が前記転写されるべき層(42)に転写され、よって、前記転写されるべき層が部分的に前記転写操作により完全に切除され、前記空間構造にしたがうパターン形状に構造化された電気的機能層(43)が形成されることを特徴とするフィルム(1,3,6,7,8,9)。 - 前記フィルムが型押フィルムまたは積層フィルムであることを特徴とする請求項1に記載のフィルム(1,3,6,7,8,9)。
- 前記型押フィルムまたは積層フィルムが、キャリアフィルム(11,61,71,81)、有機半導体材料を含む少なくとも1つの層(16,67,76,88)、電気絶縁材料を含む少なくとも1つの層(15,65,75,87)及び、領域状にパターン形状に整形され、導電材料を含む、2つまたはそれより多くの層(14,17,19,64,66,74,77,86,89)を有することを特徴とする請求項2に記載のフィルム(1,3,6,7,8,9)。
- 前記導電層(14,17,19,64,66,74,77,86,89)が有機導電材料を含むことを特徴とする請求項3に記載のフィルム(1,3,6,7,8,9)。
- 前記電気絶縁層(15,65,75,87)が有機絶縁材料を含むことを特徴とする請求項3または4に記載のフィルム(1,3,6,7,8,9)。
- 前記フィルムが、キャリアフィルム(11)と、該キャリアフィルム(11)に剥離可能に設けられた転移層部分(2)とを有する型押フィルムであることを特徴とする請求項2から5のいずれかに記載のフィルム(1,3,6,7,8,9)。
- 前記型押フィルムが剥離層(12,62,72,82)及び接着層(20,69,79,97)を有することを特徴とする請求項6に記載のフィルム(1,3,6,7,8,9)。
- 前記型押フィルムまたは積層フィルムが機能性高分子材層に隣接する1つまたはそれより多くのラッカー層(13,18,63,68,73,78,84,90)を有することを特徴とする請求項2から7のいずれかに記載のフィルム(1,3,6,7,8,9)。
- 前記導電層、半導体材料を含む前記層及び電気絶縁材料を含む前記層が透明であることを特徴とする請求項3に記載のフィルム(1,3,6,7,8,9)。
- 前記フィルムが、有機半導体材料を含む層(16)、電気絶縁材料を含む層(15)及び、導電材料を含む、領域状にパターン形状に整形された、2つまたはそれより多くの層(14,17,19)を有するフィルム素子(2)であることを特徴とする請求項1に記載のフィルム(2)。
- 前記フィルム(2)が、型押フィルムまたは積層フィルム(1)を用いて基板に着けられたフィルム素子であることを特徴とする請求項10に記載のフィルム。
- 電気機能性が光学特徴と組み合せられていることを特徴とする請求項1から11のいずれかに記載のフィルム(8)。
- 前記フィルムが、前記フィルムの層間で整形され、一方で、有機半導体技術を用いて作成される前記電子デバイスの層(46)をパターン形状に構造化し、他方で、光学特徴として光回折効果を生じさせる、空間構造(47)を有することを特徴とする請求項12に記載のフィルム(8)。
- 前記空間構造(47)が巨構造及び微構造の重畳によって形成され、前記巨構造が有機半導体技術を用いて作成される前記電子デバイスの層(46)のパターン付構造化に役立ち、前記微構造が前記光学特徴の生成に役立つことを特徴とする請求項13に記載のフィルム。
- 前記フィルムがホログラフィ光学層または回折層(83,84,90,91)を有することを特徴とする請求項1から14のいずれかに記載のフィルム(8)。
- 前記フィルムが順次薄膜層系(94,95)を有することを特徴とする請求項1から15のいずれかに記載のフィルム(8)。
- 前記フィルムが装飾層を有することを特徴とする請求項1から16のいずれかに記載のフィルム。
- 前記フィルム(8)が光学的セキュリティ標章をつくる2つまたはそれより多くの相互に重畳される層(83,84,90,91,94,95)を有し、有機半導体技術を用いて作成される前記電子デバイスの1つまたはそれより多くの機能層(86,87,88,89)がそのような光学活性層の間に配置されていることを特徴とする請求項1から17のいずれかに記載のフィルム(8)。
- 前記フィルムがセキュリティ素子として用いられることを特徴とする請求項1から18のいずれかに記載のフィルム。
- 請求項1に記載のフィルム(1,3,6,7,8,9)の作成のためのプロセスにおいて、有機半導体技術を用いて作成される少なくとも1つのデバイスの1つまたはそれより多くの層(43,49,50)の構造化が熱転写またはUV転写によって実施されることを特徴とするプロセス。
- 前記空間構造が導電材料を含む電極層に転写され、次いで非導電材料または半導体材料を含む電気的機能層が前記電極層に被着されることを特徴とする請求項20に記載のプロセス。
- 構造深さが転写されるべき層(42)の厚さより小さい空間構造が前記転写されるべき層(42)に転写されることを特徴とする請求項21に記載のプロセス。
- 硬化時にあらかじめ定められた体積減少を受ける材料の電気的機能層(49)が前記転写層(46)に被着され、前記材料は、前記転写構造にしたがうパターン形状に構造化された機能層が硬化時に前記体積収縮によって残る被着量で、前記転写層(46)に被着されることを特徴とする請求項22に記載のプロセス。
- 前記機能層がUV硬化性材料を含むことを特徴とする請求項23に記載のプロセス。
- 電気的機能層(50)が前記転写層(46)に被着され、次いで前記転写構造にしたがうパターン形状に構造化された機能層(50)が残るような深さまで前記電気的機能層が、特にエッチングによって、除去されることを特徴とする請求項22に記載のプロセス。
- 前記空間構造が非導電材料または半導体材料を含む電気的機能層に転写され、次いで導電材料を含む電極層が前記電気的機能層に被着されることを特徴とする請求項22から25のいずれかに記載のプロセス。
- 請求項1に記載のフィルムの作成のためのプロセスにおいて、有機半導体技術を用いて作成される少なくとも1つのデバイスの機能に必要な全てのあるいは1つまたはそれより多くの電極層、絶縁層及び半導体層が印刷プロセスによって全表面積または表面積の一部にわたってフィルム構造に導入されることを特徴とするプロセス。
- 電気的機能性及び光学的機能性が、転写操作によってつくられることを特徴とする請求項20から27のいずれかに記載のプロセス。
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DE102006047388A1 (de) | 2006-10-06 | 2008-04-17 | Polyic Gmbh & Co. Kg | Feldeffekttransistor sowie elektrische Schaltung |
US8542442B2 (en) * | 2007-05-07 | 2013-09-24 | Centre Suisse d'Electronique et de Microtechnique SA—Recherche et Developpement | Isotropic zero-order diffractive filter |
DE102007061587A1 (de) * | 2007-12-18 | 2009-06-25 | Abb Ag | Isolationsmaterial mit Lack und Materialzusatz sowie Isolationsband |
GB2467316B (en) * | 2009-01-28 | 2014-04-09 | Pragmatic Printing Ltd | Electronic devices, circuits and their manufacture |
JP5676985B2 (ja) * | 2010-09-09 | 2015-02-25 | キヤノン株式会社 | ホログラム形成装置及びホログラム形成方法 |
DE102011084437A1 (de) * | 2011-10-13 | 2013-04-18 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauelement und Verfahren zum Herstellen eines lichtemittierenden Bauelements |
US9648751B2 (en) | 2012-01-13 | 2017-05-09 | Arjo Wiggins Fine Papers Limited | Method for producing a sheet |
US9846874B2 (en) * | 2012-04-25 | 2017-12-19 | Hewlett-Packard Development Company, L.P. | Performing a user related operation |
FR2996338B1 (fr) | 2012-09-28 | 2020-10-16 | Hologram Ind | Composant optique de securite a effet reflectif, fabrication d'un tel composant et document securise equipe d'un tel composant |
CN103594624B (zh) * | 2013-11-07 | 2015-12-09 | 电子科技大学 | 一种有机场效应晶体管及其制备方法 |
RU2573903C1 (ru) * | 2014-09-02 | 2016-01-27 | Федеральное государственное бюджетное учреждение науки Институт синтетических полимерных материалов им. Н.С. Ениколопова Российской академии наук (ИСПМ РАН) | Способ получения гибкой электропроводящей полимерной пленки |
CN104459833A (zh) * | 2014-12-13 | 2015-03-25 | 中国科学技术大学先进技术研究院 | 一种新型光学聚合物复合薄膜及其制作方法和应用 |
CN108811400B (zh) * | 2018-07-24 | 2020-09-25 | Oppo广东移动通信有限公司 | 电子设备外壳及其制备方法以及电子设备 |
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DE10393887D2 (de) | 2005-08-25 |
KR20050073468A (ko) | 2005-07-13 |
RU2005113274A (ru) | 2006-01-27 |
EP2261979A1 (de) | 2010-12-15 |
AU2003281923A8 (en) | 2004-04-23 |
KR101196591B1 (ko) | 2012-11-02 |
CN1689175A (zh) | 2005-10-26 |
EP1559147B1 (de) | 2014-11-12 |
US7655498B2 (en) | 2010-02-02 |
JP2006501659A (ja) | 2006-01-12 |
US20060180805A1 (en) | 2006-08-17 |
PL374836A1 (en) | 2005-11-14 |
EP1559147A2 (de) | 2005-08-03 |
WO2004032257A2 (de) | 2004-04-15 |
PL213928B1 (pl) | 2013-05-31 |
RU2317613C2 (ru) | 2008-02-20 |
CN100454602C (zh) | 2009-01-21 |
ES2439446T3 (es) | 2014-01-23 |
WO2004032257A3 (de) | 2005-06-09 |
AU2003281923A1 (en) | 2004-04-23 |
EP2261979B1 (de) | 2013-09-11 |
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