EP1247338A2 - Composant comprenant un systeme pour evacuer des tensions pyroelectriques, et son procede de production - Google Patents

Composant comprenant un systeme pour evacuer des tensions pyroelectriques, et son procede de production

Info

Publication number
EP1247338A2
EP1247338A2 EP00990559A EP00990559A EP1247338A2 EP 1247338 A2 EP1247338 A2 EP 1247338A2 EP 00990559 A EP00990559 A EP 00990559A EP 00990559 A EP00990559 A EP 00990559A EP 1247338 A2 EP1247338 A2 EP 1247338A2
Authority
EP
European Patent Office
Prior art keywords
layer
resistance layer
component
electrically conductive
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP00990559A
Other languages
German (de)
English (en)
Inventor
Wolfgang Pahl
Heiner Bayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Electronics AG
Original Assignee
Epcos AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos AG filed Critical Epcos AG
Publication of EP1247338A2 publication Critical patent/EP1247338A2/fr
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02921—Measures for preventing electric discharge due to pyroelectricity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49005—Acoustic transducer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • Pyroelectric materials show the pyroelectric effect. These materials react to changes in temperature by building up an electrical voltage. This is particularly disadvantageous for components which are built on pyroelectric substrates, for example piezoelectric components or surface wave components. Between the more or less fine electrically conductive structures of these components, which are applied directly to the pyroelectric substrate, voltages or field strengths can be so great that electrical flashovers occur between the fine metal structures. The structures and thus the component can be damaged or destroyed if no suitable protective measures are taken.
  • the properties of the piezoelectric substrate material and thus also the component properties can change irreversibly or even the component can become unusable. If the pyro voltages occur during the operation of the component, the electrical fields or the flashovers between the electrically conductive structures can trigger pulses which can lead to incorrect signal processing in the electronic circuit.
  • Undesired pyro voltages which can be attributed to strong temperature changes, occur in particular in the production of components with a pyroelectric substrate.
  • a known way of preventing damage from pyroelectric charging is to provide ionization directions during manufacturing. By offering moveable charge carriers of the appropriate quantity and polarity in the ambient atmosphere of the pyroelectric substrate, the usually stationary charges on the substrates can be largely compensated for. However, this is a technically complex process that is also not suitable for all manufacturing processes. Also, a pyroelectric surface covered with electrically insulating or passivating layers can no longer be sufficiently discharged with the aid of ionization electrodes. In addition, the ionization electrodes are sensitive to various thin-film processes and would also be damaged, for example, by organic outgassing occurring in furnace processes.
  • EP-A-0 785 620 it is known to protect components on pyroelectric substrates against damage caused by pyro-discharges by means of conductive layers applied over the entire surface above or below the component structures on the substrate.
  • the disadvantage here is that the additional material layer can change the component properties in an impermissible manner and, for example, change the electro-acoustic coupling or the propagation speed of a surface wave or even cause its damping.
  • the invention specifies a component with electrically conductive structures on a pyroelectric substrate material, in which the occurring pyro voltages are derived in a harmless manner with the aid of a high-resistance layer.
  • the properties of the high-resistance layer can be adapted to the component function by varying the parameters layer thickness, electrical conductivity and type of layer material in such a way that there is no negative impairment of the component function. It is possible to use the high impedance
  • Hi tr h- 1 ⁇ ⁇ tr ⁇ Hi D ⁇ ⁇ rt ⁇ ⁇ ⁇ P rr LQ CQ _3 • 0> HI Hi Di ⁇ - ⁇ Hi rt 13 P 53 Hj rr CQ PJ ⁇ tr ⁇
  • FIGS. 1 to 6 use schematic cross sections to show different process stages in the production of a component according to the invention.
  • FIG. 7 shows a component with a structured high-resistance layer in a top view.
  • Figure 1 shows a surface wave device in schematic cross section.
  • the component is built on a piezoelectric substrate, for example lithium niobate or lithium tantalate, which also has pyroelectric properties.
  • the figure shows two groups of three electrode fingers each, which represent interdigital transducers (electro-acoustic transducers) and serve as input or output transducers for a surface acoustic wave filter.
  • the electrically conductive structures 2 are constructed, for example, from aluminum.
  • a high-resistance layer 3 is now applied over the entire surface.
  • a carbon layer is applied in a thickness of approximately 5 to 100 nm, for example of 50 nm, for example by sputtering. If other high-resistance materials are used, other application methods and other layer thicknesses are also suitable.
  • FIG. 2 shows the component with the high-resistance layer 3 applied over the entire surface.
  • Structures 2 and in general in the transducer area can have negative effects on the properties of the surface acoustic wave component, structuring is now carried out such that at least the transducer area, but better the entire acoustic path, is freed from the high-resistance layer 3
  • Figure 6 shows how the e.g. Resist structure 7 enclosing the electrically conductive structures 2 in the form of a frame can be used as a support element for a cover layer 9.
  • a resis film can also be used as the cover layer 9, or more generally a photostructurable material.
  • a cover cap tightly enclosing the component structures 2 is created, with the aid of which the component structures 2 can be sealed tightly against environmental influences.
  • Such sealing can also be carried out additionally by applying further materials to the PROTEC cover, the component structures 2 being protected from contact with these further materials by the PROTEC cover forming a cavity.
  • the method according to the invention for producing the component with a pyrovoltage lead 8 only requires the application of the high-resistance layer 3 as an additional work step. Due to the small layer thickness of the high-resistance layer 3, which is made of carbon, for example, the removal of the high-resistance layer 3 can Layer directly over the electrically conductive structures 2 and in the transducer area with a short plasma etching step, as he has done so far
  • the high-resistance layer 3 applied over the entire surface can also serve to protect the electrically conductive structures 2, while the resist layer 4 is developed to produce the resist structure 7 by wet chemical and in particular aqueous-alkaline. This protects the aluminum of the electrically conductive structures from attack by the alkaline developer, which could otherwise lead to aluminum removal, which in turn could have negative effects on the component properties.
  • Hj Di ⁇ - ⁇ tr P P Hj et Di Hj Hj Hi PJ P ⁇ rt N ⁇ Hi ⁇ td 13 ⁇ Di ⁇ - ⁇

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

L'invention vise à permettre d'évacuer de manière inoffensive des tensions pyroélectriques dans des composants placés sur des substrats pyroélectriques. A cet effet, une couche à haute impédance est prévue sur le substrat, ladite couche pouvant être appliquée, selon la technique des couches minces, sur l'ensemble du substrat, et pouvant être structurée de sorte que les structures électroconductrices restent dégagées.
EP00990559A 2000-01-11 2000-12-20 Composant comprenant un systeme pour evacuer des tensions pyroelectriques, et son procede de production Ceased EP1247338A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10000746A DE10000746A1 (de) 2000-01-11 2000-01-11 Bauelement mit Ableitung für Pyrospannungen und Herstellverfahren
DE10000746 2000-01-11
PCT/DE2000/004562 WO2001052410A2 (fr) 2000-01-11 2000-12-20 Composant comprenant un systeme pour evacuer des tensions pyroelectriques, et son procede de production

Publications (1)

Publication Number Publication Date
EP1247338A2 true EP1247338A2 (fr) 2002-10-09

Family

ID=7627129

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00990559A Ceased EP1247338A2 (fr) 2000-01-11 2000-12-20 Composant comprenant un systeme pour evacuer des tensions pyroelectriques, et son procede de production

Country Status (6)

Country Link
US (1) US6931699B2 (fr)
EP (1) EP1247338A2 (fr)
JP (1) JP2003520480A (fr)
KR (1) KR20020063927A (fr)
DE (1) DE10000746A1 (fr)
WO (1) WO2001052410A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004005129B4 (de) 2004-02-02 2018-09-27 Snaptrack, Inc. Bauelement mit empfindlichen Bauelementstrukturen und Verfahren zur Herstellung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6846423B1 (en) * 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
US6877209B1 (en) * 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
DE10351429B4 (de) * 2003-11-04 2013-10-31 Epcos Ag SAW Bauelement mit Klebestelle und Verwendung dafür
WO2005099088A1 (fr) * 2004-03-26 2005-10-20 Cypress Semiconductor Corp. Circuit integre comprenant un ou plusieurs dispositifs conducteurs formes sur un dispositif saw et/ou mems
JP4401409B2 (ja) * 2007-10-12 2010-01-20 富士通メディアデバイス株式会社 弾性表面波デバイス、及びその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235236A1 (de) * 1982-09-23 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Oberflaechenwellenfilter, sowie verfahren zur herstellung einer bedaempfungsschicht fuer oberflaechenwellenfilter
EP1152528A1 (fr) * 1999-02-08 2001-11-07 Matsushita Electronics Corporation Dispositif d'ondes acoustiques de surface et son procede de fabrication

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4243960A (en) * 1978-08-14 1981-01-06 The United States Of America As Represented By The Secretary Of The Navy Method and materials for tuning the center frequency of narrow-band surface-acoustic-wave (SAW) devices by means of dielectric overlays
US4952832A (en) * 1989-10-24 1990-08-28 Sumitomo Electric Industries, Ltd. Surface acoustic wave device
JPH0435312A (ja) 1990-05-28 1992-02-06 Murata Mfg Co Ltd 表面波装置
EP0534354A1 (fr) * 1991-09-25 1993-03-31 Sumitomo Electric Industries, Limited Procédé de fabrication de dispositif à ondes acoustiques de surface et son procédé de fabrication
JP3252865B2 (ja) * 1992-09-11 2002-02-04 住友電気工業株式会社 表面弾性波素子および表面弾性波素子の製造方法
JPH08203998A (ja) * 1995-01-20 1996-08-09 Sony Corp 多層配線の形成方法
US5815900A (en) 1995-03-06 1998-10-06 Matsushita Electric Industrial Co., Ltd. Method of manufacturing a surface acoustic wave module
JPH09153766A (ja) 1995-11-30 1997-06-10 Sanyo Electric Co Ltd 弾性表面波素子
JPH09199974A (ja) 1996-01-19 1997-07-31 Nec Corp 弾性表面波装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3235236A1 (de) * 1982-09-23 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Oberflaechenwellenfilter, sowie verfahren zur herstellung einer bedaempfungsschicht fuer oberflaechenwellenfilter
EP1152528A1 (fr) * 1999-02-08 2001-11-07 Matsushita Electronics Corporation Dispositif d'ondes acoustiques de surface et son procede de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004005129B4 (de) 2004-02-02 2018-09-27 Snaptrack, Inc. Bauelement mit empfindlichen Bauelementstrukturen und Verfahren zur Herstellung

Also Published As

Publication number Publication date
WO2001052410A3 (fr) 2001-12-06
KR20020063927A (ko) 2002-08-05
US6931699B2 (en) 2005-08-23
WO2001052410A2 (fr) 2001-07-19
JP2003520480A (ja) 2003-07-02
DE10000746A1 (de) 2001-07-12
US20020190605A1 (en) 2002-12-19

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