EP1247338A2

EP1247338A2 - Component with drain for pyroelectrical voltages and a method for production thereof

Info

Publication number: EP1247338A2
Application number: EP00990559A
Authority: EP
Inventors: Wolfgang Pahl; Heiner Bayer
Original assignee: Epcos AG
Current assignee: TDK Electronics AG
Priority date: 2000-01-11
Filing date: 2000-12-20
Publication date: 2002-10-09
Also published as: US20020190605A1; DE10000746A1; JP2003520480A; WO2001052410A2; US6931699B2; WO2001052410A3; KR20020063927A

Abstract

A high-resistance layer arranged on a pyroelectric substrate, for the harmless draining of pyroelectric voltages, is disclosed. Said layer can be applied to the whole surface in a thin layer process and then formed, such that electrically conducting component structures remain uncovered.

Description

description

Component with derivation for pyro voltages and manufacturing processes

Pyroelectric materials show the pyroelectric effect. These materials react to changes in temperature by building up an electrical voltage. This is particularly disadvantageous for components which are built on pyroelectric substrates, for example piezoelectric components or surface wave components. Between the more or less fine electrically conductive structures of these components, which are applied directly to the pyroelectric substrate, voltages or field strengths can be so great that electrical flashovers occur between the fine metal structures. The structures and thus the component can be damaged or destroyed if no suitable protective measures are taken.

Furthermore, due to the high field strengths that occur, the properties of the piezoelectric substrate material and thus also the component properties can change irreversibly or even the component can become unusable. If the pyro voltages occur during the operation of the component, the electrical fields or the flashovers between the electrically conductive structures can trigger pulses which can lead to incorrect signal processing in the electronic circuit.

Undesired pyro voltages, which can be attributed to strong temperature changes, occur in particular in the production of components with a pyroelectric substrate. A known way of preventing damage from pyroelectric charging is to provide ionization directions during manufacturing. By offering moveable charge carriers of the appropriate quantity and polarity in the ambient atmosphere of the pyroelectric substrate, the usually stationary charges on the substrates can be largely compensated for. However, this is a technically complex process that is also not suitable for all manufacturing processes. Also, a pyroelectric surface covered with electrically insulating or passivating layers can no longer be sufficiently discharged with the aid of ionization electrodes. In addition, the ionization electrodes are sensitive to various thin-film processes and would also be damaged, for example, by organic outgassing occurring in furnace processes.

From EP-A-0 785 620 it is known to protect components on pyroelectric substrates against damage caused by pyro-discharges by means of conductive layers applied over the entire surface above or below the component structures on the substrate. The disadvantage here is that the additional material layer can change the component properties in an impermissible manner and, for example, change the electro-acoustic coupling or the propagation speed of a surface wave or even cause its damping.

Furthermore, it is possible to conductively connect the metallic, electrically conductive component structures to one another, for example by providing narrow metallic strips which are formed to form a high-resistance connection, for example in a meandering arrangement. However, these connections require a considerable substrate area, which prevents the increasing miniaturization of the components. In addition, due to their geometry, they are susceptible to electrical interruptions during the manufacturing process. Especially for surface acoustic wave components that have a complicated arrangement and complex If several transducer structures are interconnected on one chip, it can sometimes be impossible to protect all transducers in this way if there is not enough space available for the structures to be protected and if the technologies used do not allow conductor tracks to be crossed. Even with additional bonded wire contacts for connecting different electrically conductive structures, which also cause high costs, the problem cannot always be solved.

It is therefore an object of the present invention to provide a possibility for components with a pyroelectric substrate to easily and harmlessly derive pyro voltages both during the production and during the operation of the components.

This object is achieved according to the invention by a component according to claim 1. A method for producing the component and advantageous refinements of the invention can be found in further claims.

The invention specifies a component with electrically conductive structures on a pyroelectric substrate material, in which the occurring pyro voltages are derived in a harmless manner with the aid of a high-resistance layer. The properties of the high-resistance layer can be adapted to the component function by varying the parameters layer thickness, electrical conductivity and type of layer material in such a way that there is no negative impairment of the component function. It is possible to use the high impedance

Apply the entire layer and then structure it. However, it is also possible to apply the high-resistance layer exclusively to the areas that are not covered by component structures, for example by the electrically conductive structures. Under the layer of a layer Ω

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P CQ Φ μ- 3 tr μ- Z Hi μ- 0 Φ P μ- K PJ μ- Hl μ- Hj - 0 μ- <LQ μ-

PJ = <! 0 tr D. 0 H- μ- P Hi <PJ = (3 P μ- h- ¹ μ- D Φ μ- Q tr P μ- Φ Φ 3 tr 0 h- ^J Φ tr * ϋ rr μ- φ 0 CQ CQ CQ tu H {Ω P PJ = CQ Φ Hi P Φ & 3 CQ Q Hi Φ

Φ P Ω 13 PJ P D. μ- P ⁾ φ μ- rr tr <Ω rt 3 Φ CQ N PJ μ- LQ rr z cn Hi

Hi tr Hi Hj PJ LQ> Φ CQ P ^J r Hj P (3 o φ tr P Φ μ- CQ LQ Φ - φ Ω

> Φ PJ N CQ Φ P Hi Ω μ- φ P Φ Hj H- μ- Φ ω P φ CQ φ CQ P tr Z

Φ c P h- ¹ φ rt Φ> μ- tr CQ J μ- LQ CQ μ- Q! 3 LQ CQ 13 0 h- ¹ PJ 0 Di μ- Φ

Hi CQ h- ¹ μ- μ- h- ¹ _- "cn Ω CQ Ω Φ P Φ Hi Φ tr Di rt CQ cn 3 D (3 Ω μ- h- ¹ Hi Ό CQ CQ LQ 03 μ- Ω tr 3 tr Z. φ CQ J Hi PJ tr Φ PJ = μ- Ω rt Φ P tr rr

PJ = 13 = ^ μ- Ω PP tr Φ Φ ⁾ Φ (3 = Φ Φ Ω (3 Hi CΛ μ- φ tr Hj LQ rt Φ

53 tr Hi Φ φ tr Φ z μ- PP Hi tr tr Ω Φ rt P μ- Φ Hi rr Hj 0 HJ P Φ rr Φ 0 Φ rt cn CQ μ- Φ Φ C _tr> • ra Ω H- D Φ Φ Φ

Φ (3 CQ Hi Φ • μ- Di Hi Φ Ω 0 Φ Ω Hi Hj P Hj Hi ri (3 tr μ- tr P μ- h- ^J μ- P

Hi P Φ μ- P> τ) rr Φ Φ P tr D. Hi tr h- ¹ φ Φ tr Φ Hi D Φ Ω rt Φ φ φ P rr LQ CQ _3 • 0> HI Hi Di μ- Φ Hi rt 13 = P 53 Hj rr CQ PJ ω tr φ

• CQ Ω Di h- ^J h- PJ! PJ Φ Ω Hi 0 Φ CQ rr φ μ- μ- • 0 N rt Φ P ⁾ φ rr (3 tr tr (3 ^ CQ tr μ] rr tr h- ^J P CQ Φ ω μ- P φ O Hj (3 µ-tr Hj (3 Hj O CQ

Φ (3 = P g μ- tr 0 j rt M LQ μ- Φ CQ LQ μ- 3 Φ LQ CQ φ μ- Hj LQ μ- rt CQ Φ τ3 LQ μ- 3 0 0 rt! 3 LQ O Hj φ ( 3 tr Φ rt cn 3 μ- Φ Hj X CQ Q Φ

CQ N CQ Hi O Φ 0 φ P P tr Φ P 0 Hi tsi μ- rt Q tr Φ rr Ω J CQ

O rr LQ Φ • P ^ μ- φ (3 DJ 0 μ- P LQ Ω Φ 2 Φ O Φ μ- Hi tr P rr μ- Φ Φ ^ TJ tr φ g φ PP 13 rt Ω PJ tr T3 PDP μ- t3 Ω μ- μ- PJ φ P 3 0 3 PJ Φ P Φ P ⁾ = D Hi Hi 0 tr CQ <! 0 μ- φ P 'ω CQ

PJ = i φ H {P rr Hi φ rt (3 = LQ cn Φ CQ 0 tr Φ <cn ω Φ Ω Φ Ω rr φ DJ I> Φ Hi rr tr Φ μ- N PJ Hi Φ rt P Ω h- ¹ 3 N 0 μ- Φ CQ MP tr μ- '(3rd

P PJ φ Hi μ- PJ PJ P Φ P tr HS tr h- ¹ μ- 0 P Φ Hj Z μ- D rr φ P

CS tr h- ¹ CQ P CQ Di H {13 K Φ ω LQ tr φ φ P φ φ LQ

C Φ tö PJ Φ LQ rt μ-> υ Ω μ- J? μ- 3 rr φ -l 2 μ- μ- Φ φ P cn

P φ Φ rt h- ^J Φ Φ P tr Φ tr Φ Ω rt Φ μ- PJ = φ μ- Ω Q tr ¹ μ- D Ω α i Φ Hi PJ Hj P 0 P _- ^■ tr (3 Di CQ P 0 rr? 0 tr Φ CQ Φ rr Φ tr Φ

3 Hl t μ- ω Φ rt rt μ- tr rt HS Φ Ω D Hi Hi Di Φ 0 μ- h Hi μ- Hi

D φ PJ rr X μ- μ- Φ tr 0 Ξ φ o Φ μ- Hi tr μ- LQ <0 Φ P 3 h- ^J rt PJ = Ω

Φ P tr μ- P rr P Φ Hi μ- tΛ Ω P Φ LQ PJ Φ rt Hj μ- Ω Hl tr τ3 tr td

HS rr Hi 0 Hi Φ μ- Φ Ω Φ tr Hj N o P Hi Hj Di rt tr PJ = μ- 0 rt Hj

Φ φ s (3 = rr J CQ CQ - P 0 0 (3 (3 Di N μ- Hl 0 n Φ rt Φ tr LQ t- ^> hh

D ω P CQ Hj μ- Hj • Ö μ- φ Di tr Hi P Φ (3 CQ PJ • Ö Ω Hj Φ μ- Φ ^ μ-

P ⁾ tr PZ 0 μ- CQ 3 LQ LQ Φ Hj Ω tr Hi tr cn LQ g Di P

N 3 N PJ & CQ μ- 3 φ rt rt P μ- PJ P tr tr Hi Φ p ⁾ cn CQ Ω t πd Φ μ- i

13 μ- c Hi μ- tr φ P> h- ¹ PJ LQ P 3 rt 3 PJ = Φ Φ P tr (3 tr φ P> Hi Φ 13

LQ Hi HS N Φ Φ rt CQ <Z Ä φ μ- 0 = Hi μ- Hj P tr Φ μ- μ- Hj Φ P φ Di Φ CQ N μ- s: Φ μ- CQ LQ Φ rt rt cn 0 CQ μ- Ω rr rr Φ LQ tr tu ~ • τJ 0 C CQ Φ Hj Hi 0 cn Ω h- ¹ Hj rt φ Ω LQ tr 3 rt P tr μ- μ- 13

0 = _3 φ P ⁾ _3 3 Ω μ- tr Di. Ω tr μ- P Φ P tr Φ Φ Φ Hj Φ rt Hl XP ΓT μ-

HJ PJ H {μ- HS Di tr CQ Ji - Φ tr φ Ω Φ -> μ- Φ μ- 3 PJ CQ (3 = Φ rr Z CQ μ- Ω CQ _3 ΓT φ tö Φ φ _- ^■ HJ μ- P tr! 3 ω (3 Ω μ- CQ D rt tr Hi Hi Φ rr

LQ tr rt CQ μ- Hi φ P rt Z. Ω P tr LQ Ό Hj 0 ü P ⁾ μ- φ Φ tr t Φ μ- <0 rr tr cn tr ¹ D rt P μ- (3 tr Hi rt D Φ P Φ Di

P 0 h- ¹ Φ Φ Q <0 tr Hj et Ω tr> 0 = φ φ Ω Φ (3 μ- P CQ Hi μ- h- ^J CQ fö T φ P Φ 0 tr Φ C CQ P ⁾ P rt F Hi Ω D Φ rr μ- Φ o LQ c 0 (3 μ- Hi μ- Ω <μ- μ- (3 P PJ Q lh Φ tr CQ J φ PP _ ^ t / Ö φ tr cn 0 Ω Φ P ω Ω Z h- '<P PJ = Ω (3 tr

* P CQ Di 0 = μ- rt CQ Φ Hi tr Hj LQ Ω tr 3 Φ ö PJ = Φ tr Hl 0 μ- i Φ P 0 P μ- μ- PQ rr Φ Di CQ P '0 = μ- μ- Ω Hj <rr LQ Ω

LQ φ Hi PD TJ Di Ω Ω Φ Hj Φ 3 LQ Q CQ tr Hi o - h- ^J Hi tr

PJ μ- Φ φ Φ 0 13 tr CQ CD 3 μ- μ- φ Φ PJ Hj Φ 13 PP Hj P Φ Φ rt φ tr 1 μ- P

FIGS. 1 to 6 use schematic cross sections to show different process stages in the production of a component according to the invention. FIG. 7 shows a component with a structured high-resistance layer in a top view.

Figure 1 shows a surface wave device in schematic cross section. The component is built on a piezoelectric substrate, for example lithium niobate or lithium tantalate, which also has pyroelectric properties. Representing the possible electrically conductive structures 2, the figure shows two groups of three electrode fingers each, which represent interdigital transducers (electro-acoustic transducers) and serve as input or output transducers for a surface acoustic wave filter. The electrically conductive structures 2 are constructed, for example, from aluminum.

On the substrate surface above the electrically conductive

Structures 2, a high-resistance layer 3 is now applied over the entire surface. For example, a carbon layer is applied in a thickness of approximately 5 to 100 nm, for example of 50 nm, for example by sputtering. If other high-resistance materials are used, other application methods and other layer thicknesses are also suitable. FIG. 2 shows the component with the high-resistance layer 3 applied over the entire surface.

Since the high-resistance layer 3 over the electrically conductive

Structures 2 and in general in the transducer area can have negative effects on the properties of the surface acoustic wave component, structuring is now carried out such that at least the transducer area, but better the entire acoustic path, is freed from the high-resistance layer 3

CQ CQ Di <! Hi MZ CQ cn <Td Φ ≥i <cn 3 C CQ hH Φ D Λ T ö J cn Ω tö z μ- 0 J φ (3 = P Φ μ- Ω Φ ⁾ μ- P> Φ Ω μ- P φ rt P Φ Φ tr μ- (3 Ω tr φ μ-

P CQ Hj Hi μ- P tr Hj PJ P P Ω Hj tr rt i O Φ Hj Hj μ- φ Ω tr μ- CQ Hj

Di Ω Z <: Q μ- tr CQ P tr Hl μ- tr Hi Φ 3 tr Φ tr μ- Q μ- D tr t φ Φ o Φ • Ω 3 - P PJ Ω D LQ o Hi μ- φ tr J ) Ω CQ tr Φ Φ P μ- Hj tr PJ P Di tr tr PJ Φ Ω tr t3 P 0 h- ¹ CQ φ PJ tr c-- rt

Φ Hi Di P rt Di ö rr μ- tr Di Hj rt HS LQ tr PJ Φ rr Ω tr rt CQ rt tr σ μ- πd cn Φ φ Φ μ- μ- tr tr Hi Φ Φ 3 Φ C Φ 0 h- ^J 3 tr Hi μ- CQ φ PJ Q tϋ rt rt μ- Φ φ Φ Φ c-- μ- Hj P oo P tr tr rt H- 0 i 13 CQ _J H <rt N

OO Φ • <ω Hi P Hj CQ Φ φ CQ rt Φ 3 μ- d P tr Φ X rt H • tsi 13 μ- H h- ^J o tr 53 φ Φ O CQ tr CQ <: Φ P μ- LQ 3 Q rt Hj D 3 φ td ö P ⁾ PJ μ- Hj Φ μ- Φ rt Φ Hj φ LQ Φ PJ ⁱ μ- C TI o α Φ JX

(- ^■ π <J h _3 tr Ω c μ- Φ tr P (3 Hj P Φ P CQ μ- LQ öd Hi 0 Ω μ- Hj CQ PJ

CQ Φ tr Di rt Di 0 tr _3 P 0 Hi tr h- ¹ lh 3 Φ Φ φ μ- X φ P

Z e Hj Φ Φ Φ h- ^J Ω Φ Di Φ Q Ω tr Φ h- ¹ μ- PJ cn Td) Q t3 Hj Φ μ- Φ o tr Φ P φ Hl μ- Hj Hi Φ tr Z tr Φ φ Φ h- ^J Ω PJ = Φ φ Hj φ P φ 0 μ- Di PJ Hj 0 ω (3 tr Φ 0 CQ μ- μ- LQ h- ¹ tr P ⁾ rt 3 cn μ- rt Hι Ω <φ

CQ Φ tr μ-> 53 tr 3 0 μ- tr Ω P tr Φ CQ μ- CQ tsi Ω Ω - _4 ^ 0 tr φ μ- φ Ω Hj CQ P Φ M 3 Ω ω 3 tr rt t3 Ω 3 TJ cn tr tr P ⁾ 0 HJ P

X Φ rt 3 μ- μ- Di tr φ μ- Hi Φ Di tr PJ Hi rr μ- Φ ZZ μ- P tr z

PJ (3 P Φ CQ z LQ μ- μ- 0 LQ μ- μ- Φ rt - 0 Ω CQ 0 μ- φ P 3 φ Td

(3 PD h- ¹ φ μ- Φ φ φ tr Di φ φ P ^ HZND ⁱ tr tr Hj μ- P

CQ LQ Di P ⁾ Φ P 3 S3 Q tr Φ μ- Φ ⁾ Z Φ μ- rr D Φ P> tr LQ D PJ

Φ CQ Φ Z <! tr μ- Hj Φ Hj LQ Φ LQ μ- CQ 13 Φ μ- (3 Φ φ Φ CQ

D CQ Hi Hi μ- Φ cn 0 Φ LQ Ω cn P C tr LQ P Hj CQ 3 ω Hj tr Hi μ- P rt 3

Φ 0 M μ- Hi μ- Ω P μ- φ tr Ω Φ Q Hj Φ Φ (3 Di P Φ LQ CQ P)

Hj z »τJ Hj P Di P tr D tr P Ω P PJ = P <53 PJ μ- Φ TJ cn ZP) = μ-? Ö N μ- D φ cn <μ- tr 1 hh rt Di tr Φ J Ω [Q tr μ- Ω Φ rt

53 φ O φ Ό Di Φ Ω Φ P Ω Ω Td Φ PJ N μ- μ- Φ Hj P tr) Hj φ tr Hj N o Hl tϋ μ- J tr Hj tr Hj tr 3 N rt P φ μ- tr D μ- PJ μ- Di <

VD φ W LQ O φ tr rt 53 μ- z rt P ⁾ P ⁾ Φ - CQ öd Φ Ω Q Ω Φ Φ μ- n φ 3 tr? PJ Ω φ 3 CQ rt μ- CQ N Ό Φ Φ tr Z tr P Hi

"\ PPM <φ Φ Φ P tr PJ 3 μ- LQ Z Φ • H- μ- Hj CQ rt Φ rt • Hl ⁾ > n φ P Hi CQ Di rt D rt ⁾ Q rr CQ 0 P öd Φ tr μ- Z μ- PJ

O tu tr Di Hj Φ μ- C Φ PJ = Ω rt tr • Φ t Ω Φ C CQ u> TI tr to φ D Φ CQ tr <! μ- CQ Φ u> ti Hj rt tr Hj Φ Hi CQ P tr μ- P φ μ- Hj

-J Hj Hj Φ 0 Ω rt Hj LQ μ- N Φ PJ (3 μ- Hj P ⁾ Z för ct Di PJ LQ φ σ_ Q Ω P μ- h- ¹ tr PJ P> OP CQ Φ c φ Φ C φ P ⁾ 13 13 P rt x tr PJ φ h- ¹ Φ cn i3 Φ h- ¹ Hi rt Di μ- CQ μ- ^ CQ P PJ c Hl Hj tr Φ c 0 P tr CQ rt P ⁾ CQ μ- 0 ö öd C μ- CQ μ- μ- LQ 3 (3 H LQ 13

Φ h- ¹ P Ω P φ rt ∞ Hj PJN Hj PJ Hj φ μ-! ^ Φ LQ Q μ- Hi LQ Φ ⁾ P

CQ t rt P PJ = 13 (3 tu Φ P Φ ⁾ 13 μ- φ o (3 et C rt Φ tr rt

PJ <! 0 Φ φ _. 3 x XP ⁾ Q LQ CQ (3 Φ Φ tö LQ tr 3 Hj P rt J CQ Hj tsi Φ

P Φ μ- tr ü 0 = rt D h- ^J Φ CQ Hl _- ^■ Hi φ φ μ- ω Φ 3 Ω J φ Hj

P Hi P 3 n tϋ μ- P (3 tr tr Tj •> CQ φ rt CQ P Φ rr. Rt h- ^J μ- tr Ω μ- rt Hl rt μ- tr Φ QP Hj h- ¹ P ⁾ PJ μ - 3 Φ μ- Di P Hi Cd CQ _3 h- ¹ tr LQ <

• PJ Φ LQ μ- CQ Φ tr Φ ω Di Ω φ Hi CQ Φ CQ Φ N 13 P μ- Φ rt rt Φ tr LQ φ TJ μ- (3 P -J μ- 0 CQ Φ tr P rt P rt μ - Φ X rt d φ S3 Φ H!

Hi Hi P PJ CQ 3 tr rt LQ rt Hj rt rr tr 0 P μ- rt Z tr Hj D Φ Z φ μ- tr rt CQ tr tr 0 Φ Φ • 0 cn d Hi Φ LQ £ μ- 0 rt Φ W μ- Φ

P φ cn D. Ω Φ Φ Ω Hj P Z PJ μ- Ω rr φ Hi 3 rr Hj Ω rt Hj Φ P P

Hj Ω φ cn tr μ- D. tr 3 P 'Φ i3 P tr Hj Hj Φ rv 0 Z rt CQ Φ D

D rt tr Ω rr h- ^J ω 0 J PJ ^ Ω 0 (3 φ tr CQ Di P μ- ¹ φ μ- 13 J • μ- X Hj μ- _ ⁾ Ω tr rr & tr D tr X μ- Φ PJ PJ c - * J (3 μ- Hi 0 CQ LQ P

Hl Ω C Φ μ- 3 Φ rt Φ μ- 3 rt Ω CQ C CQ P rt D rt P> LQ c> td tr PX a Φ rt μ- Hj μ- P Hi Φ μ- C tr rt Φ PJ LQ tr Φ Φ P μ- et LQ rt φ LQ μ- LQ (3 = CQ LQ h Φ Hj öd

P C P 13 0 P ti N Φ

CQ φ J Φ H! Φ φ P tr P ⁾ hh PJ LQ Hh μ- φ μ- Hj h- Q HS Hj ι Φ C (3 Hj PP (l P PJ Φ

hj

Figure 6 shows how the e.g. Resist structure 7 enclosing the electrically conductive structures 2 in the form of a frame can be used as a support element for a cover layer 9. For example, a resis film can also be used as the cover layer 9, or more generally a photostructurable material. With the help of the resist structure 7 as a support and carrier element, together with the cover layer 9, a cover cap tightly enclosing the component structures 2 is created, with the aid of which the component structures 2 can be sealed tightly against environmental influences. Such sealing can also be carried out additionally by applying further materials to the PROTEC cover, the component structures 2 being protected from contact with these further materials by the PROTEC cover forming a cavity.

Compared to the PROTEC method known per se, the method according to the invention for producing the component with a pyrovoltage lead 8 only requires the application of the high-resistance layer 3 as an additional work step. Due to the small layer thickness of the high-resistance layer 3, which is made of carbon, for example, the removal of the high-resistance layer 3 can Layer directly over the electrically conductive structures 2 and in the transducer area with a short plasma etching step, as he has done so far

Intermediate stage for cleaning the resist structure 7 was used. In addition, the high-resistance layer 3 applied over the entire surface can also serve to protect the electrically conductive structures 2, while the resist layer 4 is developed to produce the resist structure 7 by wet chemical and in particular aqueous-alkaline. This protects the aluminum of the electrically conductive structures from attack by the alkaline developer, which could otherwise lead to aluminum removal, which in turn could have negative effects on the component properties. L ω tt μ> t- ¹

LΠ o U1 o LΠ o LΠ ω s to φ tr rt 53 tr Φ 3 rr> Hj tr Φ S PJ O CQ <P Hh Hi H {PJ Φ cn H

Ω μ- Φ Hi 0 Φ PJ 0 μ- t Φ C μ- Φ H {μ- tr μ- Φ μ- φ Φ h- ¹ Φ 0 Φ c μ- Ω P tr rt Hi z Ω P Hi Ω φ rr O μ- CQ φ _- ^■ Hi rt i φ ra φ Hj PP ⁾ = P h- ¹ P Hi P tr μ- (3 = tr rt Φ tr 3 H Hi Hi μ- μ- φ PJ Hi Ω Φ LQ Di LQ φ μ- Φ φ Di φ _3 0 μ- Hi 0 φ DM tr (3 = rt φ P tu Ω tr öd φ CQ PJ tr Φ Φ Φ Hj Ω μ-

Di Φ X CQ tr P ⁾ tr P Φ n J tr tr Di μ- w 0 PJ μ- Ω μ- 0 P tr tr P

Φ Hj μ- Ω 3 3 3 rt Hi 1 l-h H {Z μ- 13 c Ω (3 P tr LQ Di • d Hj cn rt Φ

P 0 tr μ- Hi μ- μ- rr 13 Φ LQ P lh P tr φ φ Φ CQ Φ Φ Φ PJ Ω 3 φ Öd P rt LQ rt LQ cn Dd φ P Hi LQ φ LQ o PP Hj 2 h- ¹ Ω tr Φ

Hi φ Φ φ PJ = Φ et Hj Hj PJ LQ Di LQ CQ tr φ φ cn PJ μ- tr μ- μ- Z

O hh P Hj Ω μ- (3 = Hj Hi lh tr CQ Φ Φ LQ D CQ 3 3 ^ (3 μ- P> P Ω Ω rt Ω P Φ tr μ- ω tr P tr (3 μ- PJ Φ Hi P Hl Φ Φ φ μ- φ (3 PPC PJ tr tr tr μ-

Φ P φ 53 Ω Φ PJ Φ X P tr Hi 0 - O 3 CQ μ- LQ P Hj Di N Φ Λ rr et 3 rt

Hj Di μ- Φ tr P P Hj et Di Hj Hj Hi PJ = P Φ rt N Φ Hi Ω td 13 α Di μ- Φ

Hi 13 P μ- Di tr 13 13 Φ P 3 3 Λ PJ CQ CQ D CQ tr P P μ- μ- rt Hj

P LQ Ω N Φ Hi Hj P! 3 μ- μ- rt Φ P cn Ω J P rt Φ rt LQ Φ Ω Φ

PJ = LQ Φ Φ tr 13 i £ 3 = Φ LQ Ω PJ Φ Φ P tr Ω PJ tr 3 φ 0 3 Hi X to P

Ω CQ P t Ω P N tr (3 P PJ tr P μ- l-h μ- Φ 13 = cn Φ C tr z φ PJ CQ <X x 13 rr cn PJ <P μ- D 13 rt φ Hi CQ tr rt Λ:

Φ μ- rt P CQ Ω Φ et Φ 0 = LQ 13 tr Φ Ω Φ Dϋ 1 Ω ti Φ Hi <13

P Hj tsi rt 0 tr Hj Hi P <! Φ φ Ω 0 Hi tr HJ <: Φ d tr Φ Hj (3 0 LQ cn tr rt Φ PJ tr ZNP Φ Hi tr tr Ω Hl φ rt Z <0 h- ¹ Φ PXP Φ Hi

Φ μ- PJ hh (3 Φ φ φ Hj Hl μ- tr PJ μ- Φ Φ P rt PJ Φ rt Hi 13 =

Hj Φ Z 13 Hl P Hj C P tr o PJ 0 tr P X μ- Hj Hj 3 <3 i μ- C tr 13 = tr

Φ μ- Φ Φ CQ Φ Di Di LQ μ- Hi P tr HJ Φ PJ rt 13 Di μ- PJ φ Φ P Hi Φ h- ¹ Hi μ- P Hi tsi P φ Φ rt φ _3 Di Φ 3 φ CQ P μ- Hj Φ Q tr Hj Hj Φ μ- μ- 13

Ω D tr (3 • P P D Φ rt Φ μ- P P LQ CQ P Ω Φ hh φ CQ rt t3 tr öd Φ N tr Z φ Φ Hi Hi LQ CQ PJ tr tr PJ 13 S Hj • P Φ LQ

Φ PJ P z μ- z 0 Φ x P h- ¹ ω CQ Φ 13 μ] CQ Ω cn PJ tr P PJ (3 μ- CQ CQ

13 h- ¹ 13 φ Di HJ rr μ- φ PX CQ Φ rt tr r P Hi LQ cn P Φ tr tr φ X CΛ Hi Φ Di Hj Ω μ- P ⁾ PJ Hl μ- o = Φ Φ Φ Di Φ Φ X LQ c] Φ

0 P ⁾ tsi Φ Φ i Hj Φ μ- tr P cn P (3 = ^ P μ- P tr φ cn ^ μ-

Ω φ P (3 P Hj φ P CQ Q Ω P tr φ h- ^■ rt (3 PJ = XZ cn tr 3 P Hj - Di P 3 Ω X tr Hj Φ P 0 Φ Hi P x Hj 0 PJ Φ tr W

0 φ Φ - Φ tr 0 = μ- Di 13 μ- Di P PJ = CQ PJ rt i P μ- P ⁾ = μ- tr P <α 3 tr öd μ- P μ- Ω μ- PP Φ tr P Φ Φ P cn Hi φ

3 rt Φ P> c H {PJ φ P φ tr Φ LQ Φ 0 = Hj N μ- PJ P rt Hj φ rt μ- Hj (7ö μ- 3 Φ C φ Φ et CQ Hj P (3 LQ P Φ Di tr Q Φ 3 QH {Φ μ- cn P μ- tr tr tr P φ CQ CQ P 3 μ- LΠ PJ Z

Hj φ CQ rt CQ Φ h- ¹ rr rt • P Φ 0 Φ O rt μ- Φ Ω μ- μ- H! Hi μ-

3 tr μ- μ- 0 Φ HI Hi Hj Ω μ- PJ Φ Φ P _^ - _^ tr Ω Öd rr Φ τ Φ Hi μ- JD φ Φ öd 3 P> = 13 ü TI Φ tr CQ QP rt to tr Φ X 3 CQ Di rt 13 ra LQ P ⁾ φ tr X PJ μ- μ- o Ό CQ 53 Hl c μ- Hj tr ¹ et

Φ rt P tsi Hj 13 P μ- et tr LQ Ω tr μ- μ- Φ Φ Λ Φ Φ Φ JJ to J μ- Φ LQ (3 3 0 φ et CQ C Φ (3 tr 3 φ <μ- Hj 1 CΛ μ- μ- CQ 13 Φ h- ¹

! 3 ti Hi 0 = Λ _- ^■ 1 Φ Hi μ- H! μ- μ- rt P - Φ P Ω Φ f3 Hi PJ CQ

PJ - 13 LQ Hl φ cn μ- P LQ Q φ Φ Φ Td P Φ tr ti HS X t3 _3 ö h- ¹ 3 rt t Φ μ- l φ Hi Hi PJ - Φ CQ Ω i rt tr

Di r Φ PJ = μ- PJ = φ Hi P ⁾ Hi CQ CD tr φ <Hi X Ω tr PJ μ- 0

Φ Φ Hj 3 Ω Ω P C tr 13 rt i cn Φ ti Φ rt 13 C Di tr CQ 0 Ω

Hj μ- Z O tr tr rt x 3 P J CQ Ω CQ Di Hi PJ μ- 3 ti c Hj CQ P tr

13 = HI - μ- rr φ LQ Φ Hi rt tr Ω Φ PJ P N Hj Φ rt cn CQ 0

<Di P 13 LQ P ⁾ (3 P ω LQ Hi μ- tr P Hi Φ LQ Φ Ω μ- Hj 13 tr tr φ Φ CQ P Di (3 Hj 3 φ (3 Ω ti tr D Φ tr tr c tr P ⁾ 3

Hj 3 Ω LQ μ- Hi φ c μ- <l CQ tv p- μ- cn Φ Φ LQ LQ φ X CQ Hi μ- tr tr φ Λ P 3 rt 0 rt rt rt φ Ω μ- PN Φ PJ rr P et rt N LQ c <rt PC Φ Hj Φ 13 tr tr rt Φ (3 tr P Hj C Hj φ

P φ Φ μ- μ- μ- öd 1 h- ¹ 1 ω Φ (3 (3 P Φ tsi 0 φ Hi PJ μ-

Hj Hi Ω • PP PJ φ h- ^J P rt P 1 1 Hj μ- rt P

Φ 1 tr 0 φ 13 3 rt tsi Φ tsi LQ 1 1 φ

P rt 1 3 1 Φ 13 P 1 1

Claims

claims

1. component,

- With a substrate (1) made of pyroelectric material - With electrically conductive structures (2) arranged on the substrate

- In which a high-resistance layer (3, 8) is provided for the harmless derivation of pyro voltages on the substrate such that at least certain areas (5) of the electrically conductive structures are not covered by this layer (3).

2. The component according to claim 1, which is designed as a surface acoustic wave component on a piezoelectric substrate (1), the electrically conductive structures (2) comprising electroacoustic transducers and further structures which are selected from reflectors, conductor tracks and contact surfaces (10).

3. Component according to one of claims 1 or 2, wherein the high-resistance layer (3) is a thin layer, the

Includes carbon or a semiconductor material.

4. Component according to one of claims 1 or 2, wherein the high-resistance layer (3) comprises an organic layer which is intrinsically conductive or contains the conductive particles.

5. Component according to one of claims 1-4, in which the component is designed as a surface wave component, at least the region of the electro-acoustic transducer (2) being uncovered by the high-resistance layer (3, 8).

6. Method for producing a surface wave component with a derivative (8) for pyro voltage, - are in the on a piezoelectric substrate (1) electrically conductive ^'structures (2) is generated, which form an electro-acoustic transducer comprising acoustic path, - in which the entire surface a high-resistance layer (3) formed on the substrate via the electrically conductive structures,

- In which the high-resistance layer (3) is structured, the high-resistance layer being removed at least in the area of the electroacoustic transducer (2) and at least one area outside the acoustic path being covered by the high-resistance layer (8).

7. The method according to claim 6, wherein the high-resistance layer (3) is applied in a thin layer process.

8. The method according to any one of claims 6 or 7, in which a layer of carbon or a semiconductor is sputtered on as the high-resistance layer (3).

9. The method according to any one of claims 6-8, in which the structuring is carried out by means of plasma etching, a resist mask (7) being used.

10. The method according to claim 9, in which parts of a cover (7, 9) that is integrated over the electrically conductive structures and comprises a photo-structurable layer are used as the resist mask (7).

11. The method according to any one of claims 6-10, in which a layer of carbon with a thickness of 5-100 nm is applied as a high-resistance layer (3), which layer is formed by means of an oxygen-containing plasma and a sist mask (7) is structured.

12. The method according to any one of claims 6 - 11, wherein the high-resistance layer (3) is structured as a damping structure.