Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Definitions

• the present invention relates to a method and a device for the thermal treatment of substrates, in particular semiconductor wafers, in a process chamber with at least one element in the process chamber which influences the temperature distribution.
• Such a device is known, for example, from DE-A-197 37 802, which goes back to the same applicant.
• a translucent process chamber is provided for receiving semiconductor wafers to be treated. Outside the process chamber, heating lamp banks are provided to change the temperature of the substrate in the process chamber.
• a compensation ring surrounding the substrate in a plane parallel to it and a spaced-apart light-transforming plate, which is also referred to as a hotliner and extends parallel to it , intended.
• the purpose of the compensation ring is to prevent edge effects that occur during the thermal treatment of the wafer.
• the hotliner has the function of absorbing the light radiation emitted by a heat lamp bank, as a result of which the hotliner is heated and emits thermal radiation itself in order to heat the wafer.
• This indirect heating of the wafer serves to shield at least one surface of the wafer from direct light radiation, thereby protecting structures formed on the wafer in particular.
• the function of a Such hotliners can be found, for example, in DE-A-4 437 361, to which reference is made to avoid repetition.
• the elements influencing the temperature distribution such as. B. the compensation ring and / or the light-transforming plate are provided so that they are held rigid and parallel to a plane of the wafer during the thermal treatment. Only in DE-A-198 21 007 is a movement of the compensation ring described, which serves to allow access to the semiconductor wafer during the removal and insertion of the wafer.
• the object of the present invention is to provide a method and a device for the thermal treatment of substrates with which an improved temperature homogeneity is achieved.
• the object is achieved in a method of the type mentioned at the outset by changing a spatial arrangement of the element influencing the temperature distribution relative to the substrate and / or to the process chamber during the thermal treatment.
• the temperature distribution within the process chamber during the thermal treatment and thus the temperature distribution on or in the substrate can be changed in a simple and effective manner and adapted to the given process conditions.
• a relative movement for changing the arrangement is controlled as a function of the temperature profile of the thermal treatment, and thus a temperature distribution adapted to the temperature profile is achieved.
• the element is preferably moved relative to the substrate and / or the process chamber. In contrast to the movement of the substrate, movement of the element carries a lower risk of damage to the substrate and is therefore preferred.
• the movement is preferably a tilting, swiveling and / or lifting movement, the lifting movement not being limited to a vertical movement, but also comprising lateral movements.
• an element is a compensation element, at least partially surrounding the substrate in a plane parallel to it, in particular a compensation ring, which serves to influence edge effects that occur during the thermal treatment of the wafer.
• the element preferably consists of several segments, in particular ring segments, of which at least one is moved.
• At least two segments are moved simultaneously.
• the segments preferably lie diametrically opposite one another in pairs with respect to the substrate and the opposite segment pairs are moved simultaneously, as a result of which symmetry with respect to the substrate is achieved.
• an element is preferably a light-transforming plate which receives light rays from a heating device and emits heat radiation in order to indirectly heat the substrate.
• the spatial arrangement of at least two elements relative to the substrate and / or the process chamber is changed, as a result of which good control of the temperature distribution within the process chamber and on or in the substrate is achieved.
• at least one element and the substrate are moved in order to influence the temperature distribution on or in the substrate.
• the object on which the invention is based is also achieved in a device of the type mentioned in the introduction, in which a device is provided for changing a spatial arrangement of the element influencing the temperature distribution relative to the substrate and / or to the process chamber during the thermal treatment.
• This device has the advantages already mentioned with regard to the method.
• one element is preferably a compensation element that essentially surrounds the substrate in one plane, in particular a compensation ring.
• the compensation ring is preferably arranged obliquely to the substrate plane, as a result of which a shadow effect is generated on the wafer edges, which prevents the edge region from heating up too quickly, particularly at very high heating rates.
• an element is arranged obliquely with respect to a plane of the substrate in order to achieve a specific influence on the temperature distribution.
• an element is preferably a compensation element essentially surrounding the substrate, in particular a compensation ring, which produces a shadow effect on the wafer edges compared to a heating device, and thus prevents the edge region from heating up too quickly, particularly at very high heating rates.
• An element is preferably a light-transforming plate.
• FIG. 1 shows a device for the thermal treatment of semiconductor wafers according to a first exemplary embodiment of the invention in a first position
• FIG. 2 shows the device according to FIG. 1 in a second position
• 3 shows a device for the thermal treatment of semiconductor wafers according to a second exemplary embodiment in a first position
• FIG. 4 shows the device according to FIG. 3 in a second position
• 5 shows a schematic side view of a device for the thermal treatment of semiconductor wafers according to a third exemplary embodiment of the present invention
• FIG. 6 shows a schematic plan view of the device according to FIG. 5;
• FIG. 7 shows a diagram which shows the position of an element of the device according to the invention which influences the temperature distribution as a function of a temperature profile of the thermal treatment
• Fig. 8 is a diagram showing another embodiment of the temperature profile over time.
• the device 1 shows a schematic side sectional view of a device 1 for the thermal treatment of semiconductor wafers 2.
• the device 1 has a process chamber 3 which has walls 5 and 6, preferably made of quartz glass, on its top and bottom.
• a lamp bank or chamber 7 is provided above the wall 5, which can be mirrored and in which a heating source in the form of a plurality of lamps 8 is provided.
• Below the wall 6 there is also a lamp bank or chamber 9 similar to the chamber 7, in which a heating source in the form of lamps 10 is provided.
• the side walls of the process chamber can be provided with dielectric layers, for example in order to achieve a certain mirror effect for at least part of the electromagnetic spectrum present in the chamber.
• one of the side walls comprises a process chamber door in order to enable the semiconductor wafer 2 to be inserted and removed.
• a first, lower light-transforming plate 12 - also called a hotliner - is provided within the process chamber 3 and extends parallel to the lower process chamber wall 6.
• a further light-transforming plate 16 is provided above the semiconductor wafer 2 and, in a first position shown in FIG. 1, is held parallel and spaced apart from the semiconductor wafer.
• the light-transforming plates 12, 16 are made of a material with a high light absorption coefficient, which serves to absorb the light emitted by the lamps 8, 10 and then emit thermal radiation for heating the semiconductor wafers 2.
• the position of the upper light emitting plate 16 with respect to the semiconductor wafer 2 and the process chamber is changeable.
• the upper light-emitting plate 16 in FIG. 2 is arranged obliquely with respect to the semiconductor wafer 2 in order to change the temperature distribution within the chamber and thus on or in the substrate.
• This inclination of the upper light-emitting plate 16 is set during the thermal treatment of the wafer 2, and the degree of inclination is dependent on the temperature profile of the thermal treatment and / or a temperature distribution on or in the substrate, which can be determined using a suitable measuring device, such as, for , B. pyrometer, not shown, is measured, set.
• Another advantage of such an inclined plate is that it can be used to exert controlled influence on process gas flows.
• Oxinitridation of silicon may be mentioned as an example, for example with H 2 0, in which the H 2 0 flows parallel to the wafer.
• the reaction temperature 700 ° C - 1150 ° C.
• the controlled reduction of the process gas flow is technically more complex than the controlled tilting of the light-emitting plate 16. With a plate tilted with respect to the wafer, similarly good homogeneities of the oxynitride layers can be achieved with constant process gas flow as is the case with flow reduction. A combination of flow reduction and tilting brings optimal homogeneity.
• the lower light-transforming plate 12 could also be arranged to be movable within the process chamber 3 in order to achieve a further change in the temperature distribution within the process chamber.
• B. with a rigid arrangement of the upper light-emitting plate and an inclination of the lower light-emitting plate 12, an inclination between the wafer 2 and the upper light-emitting plate 16 can be achieved.
• the distance between one of the light-emitting plates and the substrate 2 could also simply be reduced, for example in order to bring the upper light-emitting plate 16 closer to the semiconductor wafer 2, in order to counteract a stronger heating on the upper side of the wafer 2 to reach the bottom.
• both light-emitting plates 12, 16 rigidly within the process chamber 3, and to keep the wafer 2 movable relative to the plates, for example via the spacers 13, which can be designed, for example, as telescopic rods and their height can be adjusted independently of one another in order to arrange the wafer 2 obliquely with respect to the light-emitting plate 12, 16.
• 3 and 4 show a further exemplary embodiment of a thermal treatment device 1 according to the present invention.
• the same reference numerals are used as in the first embodiment, if the same or similar components are affected.
• the device 1 has essentially the same structure as the device 1 according to the first exemplary embodiment and differs only from the device according to FIG. 1 in that instead of an upper light-transforming plate 16, a compensation ring 20 surrounding the wafer 2 is provided.
• the compensation ring 20 surrounds the wafer 2 at a short distance and thus prevents edge effects during the heating and cooling of the wafer 2 by preventing faster heating in a heating phase and rapid cooling in a cooling phase.
• the compensation ring 20 lies essentially in the same plane as the semiconductor wafer 2, but it can also be arranged somewhat above or below the wafer.
• the compensation ring 20 is raised relative to the semiconductor wafer 2.
• Such an increase takes place, for example, in so-called flash processes, in which very high heating rates of up to 400 ° C. per second are required for the production of thin layers and the temperature is immediately lowered again after reaching a maximum temperature in order to avoid undesired diffusion effects.
• Such processes are described, for example, in the same filing date and the same applicant as DE-A- having the present application and entitled "Process for the thermal treatment of objects", to which reference is made in order to avoid repetitions.
• the movement of the compensation ring can be dependent on the temperature and / or temperature described in the aforementioned application Process atmosphere changes can be controlled. In particular, it is possible to set a specific phase relationship between them.
• the compensation ring 20 By moving the compensation ring 20 before and / or during the heating and holding the ring in this position, a shadow is created on the wafer edges with respect to light rays incident obliquely from the outside and thus prevents the edge region from heating up too quickly.
• the ring 20 is brought back into the position shown in FIG. 3 in order to prevent the edge region from cooling too quickly, which considerably improves the homogeneity of the temperature distribution over the wafer surface.
• the compensation ring 20 has been shown as movable, it could also be arranged rigidly, and it could be moved during the thermal treatment of the wafer 2 with respect to the compensation ring 20, for example via adjustable spacers 13. Also a movement of the light-transforming plate would be conceivable in order to achieve a relative movement between wafer 2 and compensation ring 20.
• 5 and 6 show a further exemplary embodiment of a device 1 for the thermal treatment of semiconductor wafers 2.
• the same reference numerals are used as in the first exemplary embodiments, provided the same or similar components are affected.
• the device 1 in turn has a process chamber 3, which is formed by upper and lower translucent wall elements 5, 6.
• Upper and lower light banks are again provided in mirrored chambers adjacent to the upper and lower walls 5, 6 delimiting the process chamber.
• no light-transforming plate is provided in the process chamber.
• the wafer 2 is held in the center of the process chamber 3 by means of spacers 13 which extend from the lower translucent wall 5, namely parallel to the lower and upper walls 5, 6.
• a compensation ring 25 which is like 6, consists of four ring segments 25a-d, is suitably held within the process chamber 3.
• the compensation ring 25 is arranged obliquely with respect to the wafer 2 in order to produce a shadow effect in edge regions of the wafer, in particular when the wafer is heated up.
• the compensation ring could be held rigidly in this position.
• the compensation ring 25 movable in order to change its position during the thermal treatment.
• the individual ring segments 25a-d can be moved individually, all together or in pairs.
• the diametrically opposed ring segments 25a and 25c move together in order to produce a certain symmetry with respect to the wafer 2.
• the diametrically opposite ring segments 25b and 25d can be moved simultaneously.
• the compensation ring or individual segments thereof can also be raised or lowered, as shown in FIG. 4, for example.
• the number of segments is not limited to four, and more or fewer segments can also be provided.
• FIG. 7 shows the temperature profile over time of a thermal treatment of a semiconductor wafer, as well as a movement of a compensation ring controlled as a function thereof, as is shown in FIG. 5.
• the compensation ring 25 is essentially in the same plane as the wafer 2.
• the compensation ring is tilted with respect to the wafer plane, the tilt angle correlating with the time profile of the temperature and z. B. increases with increasing heating rate.
• the temperature is increased to a maximum and then the temperature is immediately reduced again.
• the compensation ring is tilted back during the temperature drop.
• the cooling of the wafer is stopped at a temperature T ', and the wafer is kept constant at this temperature.
• the compensation ring is again parallel to the wafer and thus prevents excessive cooling of edge areas of the wafer.
• the above movement of the compensation ring creates a shadow on the wafer edges during the heating phase in order to prevent the edge region from heating up quickly. This improves the homogeneity of the temperature distribution over the wafer surface. A further improvement in the homogeneity can be achieved by an additional wafer rotation and / or by regulating the radiation intensity of the heating lamps.
• Such processes are used in particular for the activation of implanted (doped) wafers, these activation processes requiring a very high temperature homogeneity, especially with doping with a low penetration depth.
• FIGS. 1 to 5 An upper lamp bank 8 and a lower lamp bank 9 with rod-shaped lamps, for example, are shown in FIGS. 1 to 5.
• the axes of the lamps of a lamp array preferably run parallel.
• the parallel rod-shaped lamps extend into the leaf plane.
• Halogen lamps for example, can be used as lamps of such a lamp field.
• the tilt axis of the compensation ring 25 runs parallel to the rod lamps.
• the pivot axis for tilting the compensation element instead of running parallel to the lamp axes of a lamp bank, forms an arbitrary angle with these; preferably 90 °.
• the lamp axes of the halogen lamps of the upper and lower lamp array can be arranged both in parallel and crossed at any angle to one another.
• a combination of a lamp field with flashlights and a lamp field with point lamps is also possible.
• point lamps are to be understood as lamps whose filament length is shorter than the diameter of the lamp bulb.
• both lamp fields can also be equipped exclusively with point lamps or with a combination of point lamps and flashlights.
• a specific radiation field can be generated by controlling each individual lamp, which in connection with the current relative spatial arrangement of the wafer and the mechanical see auxiliary elements optimized the homogeneity of the temperature of the wafer relative to the lamp banks.
• the compensation ring was tilted as one unit in the course of the process according to FIG. 7, displacements of the ring in any direction are possible in addition to the tilting movement. In a similar way, individual segments of the compensation ring can also be moved. Instead of moving the compensation ring, it is also possible to move the wafer itself relative to the compensation ring.
• a compensation ring and a hotliner are provided, as in the embodiment of FIG. 4, it is also possible to use both elements, i.e. to move the compensation ring and the light-transforming plate to influence the heat distribution within the process chamber.
• the features of individual exemplary embodiments can be freely combined with features of the other exemplary embodiments.

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• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
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• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

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• 1999
  • 1999-10-28 DE DE19952017A patent/DE19952017A1/de not_active Ceased
• 2000
  • 2000-10-19 US US10/111,737 patent/US7041610B1/en not_active Expired - Lifetime
  • 2000-10-19 EP EP00972808A patent/EP1224688A1/de not_active Withdrawn
  • 2000-10-19 KR KR1020027005516A patent/KR100703259B1/ko active IP Right Grant
  • 2000-10-19 JP JP2001534189A patent/JP5144867B2/ja not_active Expired - Lifetime
  • 2000-10-19 WO PCT/EP2000/010290 patent/WO2001031689A1/de active Search and Examination
• 2001
  • 2001-01-29 TW TW089122630A patent/TW483070B/zh not_active IP Right Cessation

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