EP1213744A3 - Dispositifs et procédés d'implantation ionique - Google Patents

Dispositifs et procédés d'implantation ionique Download PDF

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Publication number
EP1213744A3
EP1213744A3 EP01310200A EP01310200A EP1213744A3 EP 1213744 A3 EP1213744 A3 EP 1213744A3 EP 01310200 A EP01310200 A EP 01310200A EP 01310200 A EP01310200 A EP 01310200A EP 1213744 A3 EP1213744 A3 EP 1213744A3
Authority
EP
European Patent Office
Prior art keywords
ion
ion implantation
methods
semiconductor substrate
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP01310200A
Other languages
German (de)
English (en)
Other versions
EP1213744B1 (fr
EP1213744A2 (fr
Inventor
Tsutomu c/o ULVAC Inc. Nishihashi
Junki c/o ULVAC Inc. Fujiyama
Yuzo c/o ULVAC Inc. Sakurada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of EP1213744A2 publication Critical patent/EP1213744A2/fr
Publication of EP1213744A3 publication Critical patent/EP1213744A3/fr
Application granted granted Critical
Publication of EP1213744B1 publication Critical patent/EP1213744B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
EP01310200A 2000-12-06 2001-12-05 Dispositifs et procédés d'implantation ionique Expired - Lifetime EP1213744B1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2000372067 2000-12-06
JP2000372067 2000-12-06
JP2001194852 2001-06-27
JP2001194852 2001-06-27
JP2001345158 2001-11-09
JP2001345158 2001-11-09
JP2001363797 2001-11-29
JP2001363797A JP4252237B2 (ja) 2000-12-06 2001-11-29 イオン注入装置およびイオン注入方法

Publications (3)

Publication Number Publication Date
EP1213744A2 EP1213744A2 (fr) 2002-06-12
EP1213744A3 true EP1213744A3 (fr) 2005-12-28
EP1213744B1 EP1213744B1 (fr) 2009-02-18

Family

ID=27481851

Family Applications (1)

Application Number Title Priority Date Filing Date
EP01310200A Expired - Lifetime EP1213744B1 (fr) 2000-12-06 2001-12-05 Dispositifs et procédés d'implantation ionique

Country Status (6)

Country Link
US (1) US6930316B2 (fr)
EP (1) EP1213744B1 (fr)
JP (1) JP4252237B2 (fr)
KR (1) KR100846110B1 (fr)
DE (1) DE60137673D1 (fr)
TW (1) TW544712B (fr)

Families Citing this family (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10210270A1 (de) * 2002-03-08 2003-10-02 Infineon Technologies Ag Ionen-Implantierungsvorrichtung
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
US6727175B2 (en) * 2002-08-02 2004-04-27 Micron Technology, Inc. Method of controlling metal formation processes using ion implantation, and system for performing same
US7405147B2 (en) 2004-01-30 2008-07-29 International Business Machines Corporation Device and methodology for reducing effective dielectric constant in semiconductor devices
FR2879625B1 (fr) * 2004-02-04 2007-04-27 Guernalec Frederic Dispositif de nitruration par implantation ionique d'une piece en alliage d'aluminium et procede mettant en oeuvre un tel dispositif
KR20050099154A (ko) * 2004-04-09 2005-10-13 삼성전자주식회사 이온주입장치 및 그의 이온추출방법
DE102004063691B4 (de) 2004-05-10 2019-01-17 Hynix Semiconductor Inc. Verfahren zum Implantieren von Ionen in einem Halbleiterbauelement
US6903350B1 (en) * 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
JP2005353537A (ja) * 2004-06-14 2005-12-22 Ulvac Japan Ltd イオン注入装置
JP4868330B2 (ja) * 2004-10-08 2012-02-01 独立行政法人科学技術振興機構 多価イオン発生源およびこの発生源を用いた荷電粒子ビーム装置
US20060258128A1 (en) * 2005-03-09 2006-11-16 Peter Nunan Methods and apparatus for enabling multiple process steps on a single substrate
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
JP2007042869A (ja) * 2005-08-03 2007-02-15 Toyota Motor Corp ステンシルマスクとその製造方法とその使用方法、及び半導体装置の製造方法
EP1752992A1 (fr) 2005-08-12 2007-02-14 Siemens Aktiengesellschaft Dispositif d'adaptation d'un paramètre de faisceau à particules d'un faisceau à particules dans un accélérateur de particules et accélérateur de particules comprenant un tél dispositif
KR100734308B1 (ko) * 2006-01-26 2007-07-02 삼성전자주식회사 가변 스크린 어퍼쳐를 갖는 이온 주입 시스템 및 이를이용한 이온 주입 방법
JP2007208095A (ja) * 2006-02-03 2007-08-16 Toyota Motor Corp ステンシルマスク
JP4625775B2 (ja) * 2006-02-17 2011-02-02 株式会社アルバック イオン注入装置
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
US7358510B2 (en) 2006-03-27 2008-04-15 Varian Semiconductor Equipment Associates, Inc. Ion implanter with variable scan frequency
EP2002484A4 (fr) 2006-04-05 2016-06-08 Silicon Genesis Corp Procede et structure conçus pour fabriquer des cellules photovoltaiques au moyen d'un processus de transfert de couche
JP4890080B2 (ja) * 2006-04-18 2012-03-07 トヨタ自動車株式会社 ステンシルマスク
KR100755070B1 (ko) 2006-04-28 2007-09-06 주식회사 하이닉스반도체 번들 빔을 이용한 불균일 이온주입장치 및 방법
KR100755069B1 (ko) 2006-04-28 2007-09-06 주식회사 하이닉스반도체 불균일한 이온주입에너지를 갖도록 하는 이온주입장치 및방법
US7696494B2 (en) * 2006-06-12 2010-04-13 Axcelis Technologies, Inc. Beam angle adjustment in ion implanters
WO2007146985A2 (fr) * 2006-06-13 2007-12-21 Semequip, Inc. Appareil analyseur magnétique et procédé d'implantation d'ions
KR20140018392A (ko) * 2006-06-13 2014-02-12 세미이큅, 인코포레이티드 이온 빔 장치와 자기 스캐닝을 채용한 방법
JP4600426B2 (ja) * 2006-06-26 2010-12-15 日新イオン機器株式会社 イオン注入装置およびイオンビームの偏差角補正方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7619229B2 (en) * 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
US20080099696A1 (en) * 2006-10-31 2008-05-01 Applied Materials, Inc. Shaped apertures in an ion implanter
US20080128641A1 (en) * 2006-11-08 2008-06-05 Silicon Genesis Corporation Apparatus and method for introducing particles using a radio frequency quadrupole linear accelerator for semiconductor materials
JP5289721B2 (ja) * 2007-04-10 2013-09-11 株式会社Ｓｅｎ イオン注入装置
JP5242937B2 (ja) * 2007-04-10 2013-07-24 株式会社Ｓｅｎ イオン注入装置及びイオン注入方法
US7820460B2 (en) * 2007-09-07 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Patterned assembly for manufacturing a solar cell and a method thereof
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US7994488B2 (en) * 2008-04-24 2011-08-09 Axcelis Technologies, Inc. Low contamination, low energy beamline architecture for high current ion implantation
US8900982B2 (en) * 2009-04-08 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9076914B2 (en) * 2009-04-08 2015-07-07 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate
US9006688B2 (en) * 2009-04-08 2015-04-14 Varian Semiconductor Equipment Associates, Inc. Techniques for processing a substrate using a mask
US8330128B2 (en) 2009-04-17 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Implant mask with moveable hinged mask segments
US8101927B2 (en) * 2009-06-08 2012-01-24 Varian Semiconductor Equipment Associates, Inc. Masking apparatus for an ion implanter
US20110027463A1 (en) * 2009-06-16 2011-02-03 Varian Semiconductor Equipment Associates, Inc. Workpiece handling system
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
US8198610B2 (en) * 2009-10-20 2012-06-12 Advanced Ion Beam Technology, Inc. Ion implanter with variable aperture and ion implant method thereof
US8216923B2 (en) 2010-10-01 2012-07-10 Varian Semiconductor Equipment Associates, Inc. Integrated shadow mask/carrier for patterned ion implantation
US8242005B1 (en) 2011-01-24 2012-08-14 Varian Semiconductor Equipment Associates, Inc. Using multiple masks to form independent features on a workpiece
US8461558B2 (en) * 2011-07-01 2013-06-11 Varian Semiconductor Equipment Associates, Inc. System and method for ion implantation with dual purpose mask
US9437392B2 (en) 2011-11-02 2016-09-06 Varian Semiconductor Equipment Associates, Inc. High-throughput ion implanter
JP5892802B2 (ja) * 2012-02-09 2016-03-23 住友重機械工業株式会社 イオン注入方法、搬送容器及びイオン注入装置
CN102647849A (zh) * 2012-05-04 2012-08-22 哈尔滨工程大学 一机两用电子直线加速器及电子直线加速器的一机两用方法
JP5963662B2 (ja) * 2012-12-04 2016-08-03 住友重機械イオンテクノロジー株式会社 イオン注入装置
KR20150130557A (ko) * 2013-03-15 2015-11-23 글렌 레인 패밀리 리미티드 리에빌러티 리미티드 파트너쉽 조정 가능한 질량 분해 애퍼쳐
JP6045445B2 (ja) * 2013-06-14 2016-12-14 住友重機械イオンテクノロジー株式会社 高エネルギーイオン注入装置
US9269528B2 (en) * 2013-10-15 2016-02-23 Adavanced Ion Beam Technology, Inc. Medium current ribbon beam for ion implantation
US8884244B1 (en) * 2013-10-22 2014-11-11 Varian Semiconductor Equipment Associates, Inc. Dual mode ion implanter
JP6324223B2 (ja) 2014-06-09 2018-05-16 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
TWI686838B (zh) 2014-12-26 2020-03-01 美商艾克塞利斯科技公司 改善混合式掃描離子束植入機之生產力的系統及方法
FR3046799B1 (fr) * 2016-01-20 2018-03-02 Quertech Procede de traitement par un faisceau d'ions d'un gaz mono et multicharges pour produire des metaux colores
JP2017228785A (ja) * 2017-08-10 2017-12-28 東芝メモリ株式会社 半導体装置の製造方法および半導体製造装置
JP6933962B2 (ja) * 2017-11-22 2021-09-08 住友重機械イオンテクノロジー株式会社 イオン注入装置およびイオン注入装置の制御方法
CN109872938B (zh) * 2017-12-05 2022-03-29 中国电子科技集团公司第四十八研究所 一种适用于微纳器件制造的离子注入机
US11469108B2 (en) 2018-08-31 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. System, semiconductor device and method
CN110176394A (zh) * 2019-06-05 2019-08-27 上海华力集成电路制造有限公司 一种离子注入方法及实现其的离子注入机
CN112516797B (zh) * 2020-12-01 2022-09-16 中国科学院近代物理研究所 一种用于同位素分离系统的静电聚焦和加速系统及方法
JP6902215B1 (ja) * 2020-12-14 2021-07-14 日新イオン機器株式会社 イオン注入装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US4242149A (en) * 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
JPS6122623A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体素子の製造方法
US5315118A (en) * 1993-04-15 1994-05-24 High Voltage Engineering Europa B.V. Dual ion injector for tandem accelerators
US6155542A (en) * 1996-01-05 2000-12-05 Canon Kabushiki Kaisha Vibration damping apparatus and method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3566829A (en) * 1969-03-06 1971-03-02 Bryan H Hill Ion implantation means including a variable ration ion source
US3723730A (en) * 1971-11-30 1973-03-27 Atomic Energy Commission Multiple ion source array
US4088895A (en) * 1977-07-08 1978-05-09 Martin Frederick Wight Memory device utilizing ion beam readout
US4151420A (en) * 1977-12-08 1979-04-24 International Business Machines Corporation Apparatus for the formation of epitaxial layers doped with conductivity-determining impurities by ion deposition
US4451738A (en) * 1980-07-28 1984-05-29 National Research Development Corporation Microcircuit fabrication
US4847504A (en) * 1983-08-15 1989-07-11 Applied Materials, Inc. Apparatus and methods for ion implantation
US4578589A (en) * 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
JPS61107643A (ja) * 1984-10-30 1986-05-26 Hitachi Ltd 蒸発炉付イオン源
US5017508A (en) * 1989-06-29 1991-05-21 Ixys Corporation Method of annealing fully-fabricated, radiation damaged semiconductor devices
GB9021629D0 (en) * 1990-10-04 1990-11-21 Superion Ltd Apparatus for and method of producing ion beams
JPH04301345A (ja) * 1991-03-28 1992-10-23 Nissin Electric Co Ltd イオンビームの平行走査方法
US5196706A (en) * 1991-07-30 1993-03-23 International Business Machines Corporation Extractor and deceleration lens for ion beam deposition apparatus
JP2731886B2 (ja) 1993-04-27 1998-03-25 ▲巌▼ 大泊 シングルイオン注入装置及び方法
US5378899A (en) * 1993-10-07 1995-01-03 Kimber; Eugene L. Ion implantation target charge control system
JP3420338B2 (ja) * 1994-06-15 2003-06-23 株式会社アルバック イオン注入装置
US5907158A (en) * 1997-05-14 1999-05-25 Ebara Corporation Broad range ion implanter
JPH11135593A (ja) * 1997-10-28 1999-05-21 Toshiba Corp 半導体製造装置
JP4204662B2 (ja) * 1998-04-02 2009-01-07 株式会社アルバック イオン注入装置およびイオン注入方法
US6335534B1 (en) * 1998-04-17 2002-01-01 Kabushiki Kaisha Toshiba Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes
US6207963B1 (en) * 1998-12-23 2001-03-27 Axcelis Technologies, Inc. Ion beam implantation using conical magnetic scanning
JP2000274482A (ja) * 1999-01-18 2000-10-03 Canon Inc 能動的除振装置、露光装置及び方法並びにデバイス製造方法
US6534775B1 (en) * 2000-09-01 2003-03-18 Axcelis Technologies, Inc. Electrostatic trap for particles entrained in an ion beam
US6521897B1 (en) * 2000-11-17 2003-02-18 The Regents Of The University Of California Ion beam collimating grid to reduce added defects

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US4242149A (en) * 1979-07-31 1980-12-30 The United States Of America As Represented By The Secretary Of The Army Method of making photodetectors using ion implantation and laser annealing
JPS6122623A (ja) * 1984-07-11 1986-01-31 Hitachi Ltd 半導体素子の製造方法
US5315118A (en) * 1993-04-15 1994-05-24 High Voltage Engineering Europa B.V. Dual ion injector for tandem accelerators
US6155542A (en) * 1996-01-05 2000-12-05 Canon Kabushiki Kaisha Vibration damping apparatus and method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 010, no. 170 (E - 412) 17 June 1986 (1986-06-17) *
TERRIS B D ET AL: "Patterning magnetic films by ion beam irradiation", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 87, no. 9, 1 May 2000 (2000-05-01), pages 7004 - 7006, XP012050711, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
KR100846110B1 (ko) 2008-07-14
TW544712B (en) 2003-08-01
US6930316B2 (en) 2005-08-16
EP1213744B1 (fr) 2009-02-18
KR20020045537A (ko) 2002-06-19
US20020066872A1 (en) 2002-06-06
JP4252237B2 (ja) 2009-04-08
JP2003208869A (ja) 2003-07-25
DE60137673D1 (de) 2009-04-02
EP1213744A2 (fr) 2002-06-12

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