EP1126350A1 - Spannungs-Strom-Wandler - Google Patents
Spannungs-Strom-Wandler Download PDFInfo
- Publication number
- EP1126350A1 EP1126350A1 EP00103077A EP00103077A EP1126350A1 EP 1126350 A1 EP1126350 A1 EP 1126350A1 EP 00103077 A EP00103077 A EP 00103077A EP 00103077 A EP00103077 A EP 00103077A EP 1126350 A1 EP1126350 A1 EP 1126350A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- current
- voltage
- transistor
- transistors
- current mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
Definitions
- the invention relates to a voltage-current converter with a first current mirror, which has two transistors, the are designed so that with the same control current flowing through the first transistor by a predetermined Factor greater than that through the second transistor flowing current is the output current of the voltage-current converter represents.
- Voltage-to-current converters are well known in the art and serve to convert an input voltage into a proportional Convert output current. This is for example for the voltage controlled oscillator (also called VCO for short) in a phase locked loop (also called PLL for short) needed.
- VCO voltage controlled oscillator
- PLL phase locked loop
- the known voltage-current converter mentioned at the beginning is shown in FIG. 2 shown. It has a current mirror 10 with two normally-off n-channel MOSFETs 12, 14 (abbreviation for the English term "metal-oxide-semiconductor field-effect transistor").
- the current mirror 10 is programmed via a series resistor 16, which is connected in series with the drain terminal of the first transistor 12 to the input voltage U E and defines the drain current I 12 of the first transistor 12, which is the input current I E of the current mirror 10 represents.
- the gate connections of the two transistors 12, 14 are connected to one another and to the drain connection of the first transistor 12, so that both transistors 12, 14 are driven equally.
- the source connection of the first transistor 12 is grounded.
- the source connection of the second transistor 14 is grounded, and the output current I A of the voltage-current converter is taken from its drain connection.
- the current mirror 10 is disclosed in the book SEIFART, MANFRED, "Analoge GmbH - 5th Edition", 1996, Verlagtechnik GmbH, Berlin, DE (ISBN 3-341-01175-7), Figure 6.21.
- the circuit shown there is modified in that the input voltage U E is connected to the series resistor 16 instead of the supply voltage U DD . Consequently, the input voltage U E is proportional to the input current I E in accordance with the resistance value of the series resistor 16.
- the series resistor 16 Since the input voltage U E is usually present in the range between 2 and 5 volts and the desired output current strength I A should be in the range of a few nano amperes in the above-mentioned applications of the phase locked loop, the series resistor 16 must have a resistance value in the range of a few megohms. Resistors of this size, however, require a very large area in integrated circuits, which is a major disadvantage since the cost of integrated circuits is mainly influenced by the area requirement.
- This voltage-current converter is consequently based on the previous series resistor required in the known voltage-current converter 16 waived, and since the now provided MOSFET compared to a resistor a much smaller one Having space in an IC will save a significant amount of space achieved, although compared to the known Voltage-current converter more components are provided.
- the first current mirror If the first current mirror is considered alone, would different due to its two transistors with the same control large streams flow, more precisely, they are cheats the current through the first transistor according to the factor ten times the current through the second transistor.
- the first transistor has a conductance based on the factor ten times the conductance of the second transistor.
- this first current mirror is not alone, but in Row with the second current mirror to the supply voltage, which like the input voltage mostly in the range between 2 and 5 volts is connected, the one being the two first and second the two second transistors in Are connected in series and so to speak the input current path or form the output current path of the voltage-current converter.
- the two identical transistors of the second current mirror now ensure that the two are unequal Transistors of the first transistor have equal currents flow.
- a voltage drops across the first transistor, the corresponding to the factor only a tenth of that over the second Transistor dropping voltage.
- the residual tension that is the difference between these two tensions finally over that connected in series with the first transistor MOSFET and thus sets its drain-source voltage represents.
- This drain-source voltage remains constant to a good approximation and is, for example, 60 mV.
- This value is in consideration to the aforementioned range of input voltage between 2 and 5 volts selected and sufficient to make it smaller than the gate drive of the MOSFET, i.e. the difference between the gate-source voltage applied to it, yes is formed by the input voltage and its threshold voltage.
- the MOSFET is operated in strong inversion, so that it is in the resistance range of the output characteristic which is also called “linear range” or "more active Area ".
- the drain current is a good approximation in the resistance range proportional to the drain-source voltage. Because of this proportionality can give the channel of the MOSFET a resistance value or conductance. This conductance is in turn proportional to gate control. An enlargement the input voltage and thus the gate control a proportional increase in the conductance and thus also the drain current. Because the drain current is the first current mirror is therefore programmed by the second Current flowing transistor, which is the output current of the Voltage-current converter, also enlarged proportionally, but only stays with one according to the factor Tenth of the current through the first transistor. So is the output current proportional to the input voltage as it is expected from a voltage-current converter.
- the first current mirror is a has a third transistor connected to ground is, now the current flowing through it and nothing more the current flowing through the second transistor is the output current represents the voltage-current converter.
- This third transistor thus serves as a decoupling transistor, so that the input voltage is not loaded with the output current becomes. This creates a high input resistance of the voltage-current converter achieved. You can also use this third Transistor the output current regardless of the second Transistor can be scaled to the desired size.
- the current flowing through the first transistor current flowing through the second transistor is equal.
- the first transistor and the second transistor in weak inversion. This leaves the Drain-source voltage over a wider range of several Decades constant, so the accuracy of the voltage-current converter is improved.
- FIG. 1 shows a voltage-current converter in a preferred embodiment, which has a first current mirror 18, a second current mirror 20 and a MOSFET 22.
- this MOSFET 22 has a normally-off n-channel. Its source connection is grounded, and the input voltage U E of the voltage-current converter is connected to its gate connection and therefore forms the gate-source voltage U GS .
- the first current mirror 18 shown has three transistors 24, 26, 28 which, in the embodiment shown, are likewise self-blocking n-channel MOSFETs which are operated in the saturation range. Their gate connections are connected to one another and to the drain connection of the first transistor 24, so that all three transistors 24, 26, 28 are driven equally.
- the source of the first transistor 24 is connected to the drain of the MOSFET 22 so that the first transistor 24 and the MOSFET 22 are connected in series.
- the source connection of the second transistor 26 is grounded.
- the source terminal of the third transistor 28 is grounded and the output current I A of the voltage-current converter is taken from its drain terminal.
- the first current mirror 18 is thus programmed by the channel resistance of the MOSFET 22.
- the second current mirror 20 shown has two transistors 30, 32 which, in the embodiment shown, are normally-off p-channel MOSFETs which are operated in the saturation range. Their gate connections are connected to one another and to the drain connection of the second transistor 32, so that both transistors 30, 32 are driven equally. Their source connections are connected to the supply voltage U DD .
- the drain of the first transistor 30 is connected to the drain of the first transistor 24 of the first current mirror 18, while the drain of the second transistor 32 is connected to the drain of the second transistor 26 of the first current mirror 10, so that the two first transistors 24, 30 and the two second transistors 26, 32 are each connected in series to the supply voltage U DD .
- the three transistors 24, 26, 28 are formed in the first current mirror 18 in such a way that, with the same activation, the drain current I 24 flowing through the first transistor 24 is larger by a predetermined first factor K 1 than that through the second Transistor 26 flowing drain current I 26 and larger by a predetermined second factor K 2 than the drain current I 28 flowing through the third transistor 28.
- the first transistor 24 has a channel conductance G 24 which is K 1 times the channel conductance G 26 of the second transistor 26 and K 2 times the channel conductance G 28 of the third transistor 28.
- the two transistors 30, 32 are formed identically in the above sense, so that with the same control, the drain current I 30 flowing through the first transistor 30 is equal to the drain flowing through the second transistor 32 Current I 32 is. Consequently, their channel conductance values G 30 , G 32 are also the same. This can be achieved simply by suitable selection of the geometrical dimensions of the two transistors 30, 32 with the same parameters remaining, so that their geometrical quotients ⁇ 30 , ⁇ 32 are also the same.
- the operation of the voltage-current converter shown is described below.
- the course of the supply voltage U DD via the first transistor 30 of the second current mirror 20, the first transistor 24 of the first current mirror 18 and the MOSFET 22 to ground is referred to as the "input current path" of the voltage-current converter
- the course of the Supply voltage UDD via the second transistor 32 of the second current mirror 20 and the second transistor 26 of the first current mirror 18 to ground is referred to as the "output current path" of the voltage-current converter.
- the second current mirror 20 with its identical transistors 30, 32 ensures that the current I E in the input current path and the current I 1 in the output current path are the same size.
- K 1 U 26 / U 24th
- the first factor K 1 is now selected with the aid of the geometry quotients ⁇ 24 , ⁇ 26 such that the MOSFET 22 is operated in the resistance range.
- the following must therefore apply: U DS ⁇ U GS - U T ⁇ U eff
- U GS is the gate-source voltage that is formed by the input voltage U E
- U T is the threshold voltage
- U eff is the gate drive.
- the channel current G 22 of the MOSFET 22 since it lies in the input current path, programs the first current mirror 18, that is to say that the current I E also flowing through the MOSFET 22 in the input current path causes the drain current I 26 through its second transistor 26 , and thus also the current I 1 in the output current path, and the drain current I 28 through its third transistor 28.
- This drain current I 28 through the third transistor 28 represents the output current I A of the voltage-current converter, so that the second geometry quotient K 2 can be chosen such that the output current I A is of the desired order.
- the transistors 30, 32 of the second current mirror must also be used 20 may not be identical, rather they can be, for example similar to transistors 24, 26, 28 of the first Current level 18 differentiated by a factor.
- transistors 24, 26, 28, 30, 32 is the two current mirrors 18, 20 not on the described MOSFETs limited, rather they can, for example, MOSFETs with different polarity and / or doping, but also JFETs or be bipolar transistors.
Abstract
Description
- ein zweiter Stromspiegel vorgesehen ist, der zwei Transistoren aufweist;
- die beiden Stromspiegel derart in Reihe an eine Versorgungsspannung angeschlossen sind, daß die beiden ersten Transistoren und die beiden zweiten Transistoren jeweils in Reihe geschaltet sind; und
- ein MOSFET vorgesehen ist, der in Reihe zu dem ersten Transistor des ersten Stromspiegels geschaltet und mit seinem Gate-Anschluß an die Eingangsspannung angeschlossen ist.
- Fig. 1
- ist ein Schaltplan eines Spannungs-Strom-Wandlers in einer bevorzugten Ausführungsform; und
- Fig. 2
- ist ein Schaltplan eines bekannten Spannungs-Strom-Wandlers.
Claims (4)
- Spannungs-Strom-Wandler, mit:einem ersten Stromspiegel (18), der zwei Transistoren (24, 26) aufweist, die derart ausgebildet sind, daß bei gleicher Ansteuerung der durch den ersten Transistor (24) fließende Strom um einen vorbestimmten Faktor (K1) größer als der durch den zweiten Transistor (26) fließende Strom (I1) ist, der den Ausgangsstrom des Spannungs-Strom-Wandlers darstellt,ein zweiter Stromspiegel (20) vorgesehen ist, der zwei Transistoren (30, 32) aufweist;die beiden Stromspiegel (18, 20) derart in Reihe an eine Versorgungsspannung (UDD) angeschlossen sind, daß die beiden ersten Transistoren (24, 26) und die beiden zweiten Transistoren (30, 32) jeweils in Reihe geschaltet sind; undein MOSFET (22) vorgesehen ist, der in Reihe zu dem ersten Transistor (24) des ersten Stromspiegels (18) geschaltet und mit seinem Gate-Anschluß an die Eingangsspannung (UE) angeschlossen ist.
- Spannungs-Strom-Wandler nach Anspruch 1, dadurch gekennzeichnet, daß in dem zweiten Stromspiegel (20) der durch den ersten Transistor (30) fließende Strom dem durch den zweiten Transistor (32) fließenden Strom gleicht.
- Spannungs-Strom-Wandler nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß in dem ersten Stromspiegel (18) der erste Transistor (24) und der zweite Transistor (26) in schwacher Inversion betrieben werden.
- Spannungs-Strom-Wandler nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der MOSFET (22) eine Schwellenspannung aufweist, so daß die Spannungs-Strom-Kennlinie bei 0 beginnt.
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE50012856T DE50012856D1 (de) | 2000-02-15 | 2000-02-15 | Spannungs-Strom-Wandler |
EP00103077A EP1126350B1 (de) | 2000-02-15 | 2000-02-15 | Spannungs-Strom-Wandler |
AT00103077T ATE328311T1 (de) | 2000-02-15 | 2000-02-15 | Spannungs-strom-wandler |
JP2001560758A JP3805678B2 (ja) | 2000-02-15 | 2001-01-26 | 電圧−電流変換器 |
CN01805037.9A CN1401099A (zh) | 2000-02-15 | 2001-01-26 | 电压-电流转换器 |
PCT/DE2001/000333 WO2001061430A1 (de) | 2000-02-15 | 2001-01-26 | Spannungs-strom-wandler |
TW090103231A TW595078B (en) | 2000-02-15 | 2001-02-14 | Spannungs-strom-wandler |
US10/219,601 US6586919B2 (en) | 2000-02-15 | 2002-08-15 | Voltage-current converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00103077A EP1126350B1 (de) | 2000-02-15 | 2000-02-15 | Spannungs-Strom-Wandler |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1126350A1 true EP1126350A1 (de) | 2001-08-22 |
EP1126350B1 EP1126350B1 (de) | 2006-05-31 |
Family
ID=8167858
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00103077A Expired - Lifetime EP1126350B1 (de) | 2000-02-15 | 2000-02-15 | Spannungs-Strom-Wandler |
Country Status (8)
Country | Link |
---|---|
US (1) | US6586919B2 (de) |
EP (1) | EP1126350B1 (de) |
JP (1) | JP3805678B2 (de) |
CN (1) | CN1401099A (de) |
AT (1) | ATE328311T1 (de) |
DE (1) | DE50012856D1 (de) |
TW (1) | TW595078B (de) |
WO (1) | WO2001061430A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3018551A1 (de) * | 2014-11-05 | 2016-05-11 | Nxp B.V. | Spannungsregler mit hoher lastkapazität für niedrigen ruhestrom |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100344222B1 (ko) * | 2000-09-30 | 2002-07-20 | 삼성전자 주식회사 | 능동저항소자를 사용한 기준전압 발생회로 |
JP3813516B2 (ja) * | 2002-02-27 | 2006-08-23 | 株式会社東芝 | 光検出回路 |
CN100432885C (zh) * | 2003-08-29 | 2008-11-12 | 株式会社理光 | 恒压电路 |
JP4263068B2 (ja) * | 2003-08-29 | 2009-05-13 | 株式会社リコー | 定電圧回路 |
JP2005348131A (ja) * | 2004-06-03 | 2005-12-15 | Alps Electric Co Ltd | 電圧制御電流源 |
US7554367B2 (en) * | 2006-11-22 | 2009-06-30 | System General Corp. | Driving circuit |
TWI335709B (en) | 2007-04-30 | 2011-01-01 | Novatek Microelectronics Corp | Voltage conversion device capable of enhancing conversion efficiency |
CN101304212B (zh) * | 2007-05-11 | 2011-03-30 | 联咏科技股份有限公司 | 可提升电压转换效率的电压转换装置 |
CN101795077B (zh) * | 2010-04-12 | 2013-01-23 | Bcd半导体制造有限公司 | 一种控制变换器输出电流电压特性曲线的装置 |
GB201105400D0 (en) * | 2011-03-30 | 2011-05-11 | Power Electronic Measurements Ltd | Apparatus for current measurement |
JP2013097551A (ja) * | 2011-10-31 | 2013-05-20 | Seiko Instruments Inc | 定電流回路及び基準電圧回路 |
US20130257484A1 (en) * | 2012-03-30 | 2013-10-03 | Mediatek Singapore Pte. Ltd. | Voltage-to-current converter |
CN103376818B (zh) * | 2012-04-28 | 2015-03-25 | 上海海尔集成电路有限公司 | 用于转换电压信号的装置 |
CN108241401B (zh) * | 2016-12-23 | 2020-05-01 | 原相科技股份有限公司 | 电压转电流电路及电压控制振荡器装置 |
US10845832B2 (en) * | 2018-09-10 | 2020-11-24 | Analog Devices International Unlimited Company | Voltage-to-current converter |
US11323085B2 (en) * | 2019-09-04 | 2022-05-03 | Analog Devices International Unlimited Company | Voltage-to-current converter with complementary current mirrors |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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EP0337444A2 (de) * | 1988-04-14 | 1989-10-18 | Motorola, Inc. | Spannungs-Stromumsetzer mit MOS-Transistoren |
US4961009A (en) * | 1988-06-29 | 1990-10-02 | Goldstar Semiconductor, Ltd. | Current-voltage converting circuit utilizing CMOS-type transistor |
EP0454243A1 (de) * | 1990-04-27 | 1991-10-30 | Koninklijke Philips Electronics N.V. | Pufferschaltung |
US5337021A (en) * | 1993-06-14 | 1994-08-09 | Delco Electronics Corp. | High density integrated circuit with high output impedance |
EP0740243A2 (de) * | 1995-04-24 | 1996-10-30 | Samsung Electronics Co., Ltd. | Spannung-Strom-Umsetzer |
US5754039A (en) * | 1995-03-24 | 1998-05-19 | Nec Corporation | Voltage-to-current converter using current mirror circuits |
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NL7407953A (nl) * | 1974-06-14 | 1975-12-16 | Philips Nv | Spanningstroomomzetter. |
US4675594A (en) * | 1986-07-31 | 1987-06-23 | Honeywell Inc. | Voltage-to-current converter |
US5519309A (en) * | 1988-05-24 | 1996-05-21 | Dallas Semiconductor Corporation | Voltage to current converter with extended dynamic range |
US5021730A (en) * | 1988-05-24 | 1991-06-04 | Dallas Semiconductor Corporation | Voltage to current converter with extended dynamic range |
FR2695522B1 (fr) * | 1992-09-07 | 1994-12-02 | Sgs Thomson Microelectronics | Circuit convertisseur tension/courant. |
JP2944398B2 (ja) * | 1993-07-05 | 1999-09-06 | 日本電気株式会社 | Mos差動電圧電流変換回路 |
US5519310A (en) * | 1993-09-23 | 1996-05-21 | At&T Global Information Solutions Company | Voltage-to-current converter without series sensing resistor |
US5619125A (en) * | 1995-07-31 | 1997-04-08 | Lucent Technologies Inc. | Voltage-to-current converter |
US5917368A (en) * | 1996-05-08 | 1999-06-29 | Telefonatiebolaget Lm Ericsson | Voltage-to-current converter |
KR20000010922A (ko) * | 1997-03-13 | 2000-02-25 | 요트.게.아. 롤페즈 | 에러 정정을 갖는 전압-전류 변환기 |
WO1999022445A1 (en) * | 1997-10-23 | 1999-05-06 | Telefonaktiebolaget Lm Ericsson | Differential voltage-to-current converter |
JP3465840B2 (ja) * | 1997-11-21 | 2003-11-10 | 松下電器産業株式会社 | 電圧電流変換回路 |
US6420912B1 (en) * | 2000-12-13 | 2002-07-16 | Intel Corporation | Voltage to current converter |
US6388507B1 (en) * | 2001-01-10 | 2002-05-14 | Hitachi America, Ltd. | Voltage to current converter with variation-free MOS resistor |
-
2000
- 2000-02-15 AT AT00103077T patent/ATE328311T1/de not_active IP Right Cessation
- 2000-02-15 EP EP00103077A patent/EP1126350B1/de not_active Expired - Lifetime
- 2000-02-15 DE DE50012856T patent/DE50012856D1/de not_active Expired - Fee Related
-
2001
- 2001-01-26 CN CN01805037.9A patent/CN1401099A/zh active Pending
- 2001-01-26 JP JP2001560758A patent/JP3805678B2/ja not_active Expired - Fee Related
- 2001-01-26 WO PCT/DE2001/000333 patent/WO2001061430A1/de active Application Filing
- 2001-02-14 TW TW090103231A patent/TW595078B/zh active
-
2002
- 2002-08-15 US US10/219,601 patent/US6586919B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0337444A2 (de) * | 1988-04-14 | 1989-10-18 | Motorola, Inc. | Spannungs-Stromumsetzer mit MOS-Transistoren |
US4961009A (en) * | 1988-06-29 | 1990-10-02 | Goldstar Semiconductor, Ltd. | Current-voltage converting circuit utilizing CMOS-type transistor |
EP0454243A1 (de) * | 1990-04-27 | 1991-10-30 | Koninklijke Philips Electronics N.V. | Pufferschaltung |
US5337021A (en) * | 1993-06-14 | 1994-08-09 | Delco Electronics Corp. | High density integrated circuit with high output impedance |
US5754039A (en) * | 1995-03-24 | 1998-05-19 | Nec Corporation | Voltage-to-current converter using current mirror circuits |
EP0740243A2 (de) * | 1995-04-24 | 1996-10-30 | Samsung Electronics Co., Ltd. | Spannung-Strom-Umsetzer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3018551A1 (de) * | 2014-11-05 | 2016-05-11 | Nxp B.V. | Spannungsregler mit hoher lastkapazität für niedrigen ruhestrom |
US9817426B2 (en) | 2014-11-05 | 2017-11-14 | Nxp B.V. | Low quiescent current voltage regulator with high load-current capability |
Also Published As
Publication number | Publication date |
---|---|
CN1401099A (zh) | 2003-03-05 |
US20030020446A1 (en) | 2003-01-30 |
JP2003523695A (ja) | 2003-08-05 |
DE50012856D1 (de) | 2006-07-06 |
TW595078B (en) | 2004-06-21 |
WO2001061430A1 (de) | 2001-08-23 |
JP3805678B2 (ja) | 2006-08-02 |
US6586919B2 (en) | 2003-07-01 |
EP1126350B1 (de) | 2006-05-31 |
ATE328311T1 (de) | 2006-06-15 |
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