EP1111686A4 - Halbleiter gegenstand und verfahren zum herstellen - Google Patents

Halbleiter gegenstand und verfahren zum herstellen

Info

Publication number
EP1111686A4
EP1111686A4 EP00937291A EP00937291A EP1111686A4 EP 1111686 A4 EP1111686 A4 EP 1111686A4 EP 00937291 A EP00937291 A EP 00937291A EP 00937291 A EP00937291 A EP 00937291A EP 1111686 A4 EP1111686 A4 EP 1111686A4
Authority
EP
European Patent Office
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP00937291A
Other languages
English (en)
French (fr)
Other versions
EP1111686A1 (de
Inventor
Teruo Takizawa
Hiroyuki Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of EP1111686A1 publication Critical patent/EP1111686A1/de
Publication of EP1111686A4 publication Critical patent/EP1111686A4/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/2807—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being Si or Ge or C and their alloys except Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
EP00937291A 1999-06-23 2000-06-16 Halbleiter gegenstand und verfahren zum herstellen Ceased EP1111686A4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP17707899 1999-06-23
JP17707899 1999-06-23
PCT/JP2000/003968 WO2000079601A1 (fr) 1999-06-23 2000-06-16 Dispositif a semi-conducteur et procede de fabrication dudit dispositif

Publications (2)

Publication Number Publication Date
EP1111686A1 EP1111686A1 (de) 2001-06-27
EP1111686A4 true EP1111686A4 (de) 2005-05-11

Family

ID=16024751

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00937291A Ceased EP1111686A4 (de) 1999-06-23 2000-06-16 Halbleiter gegenstand und verfahren zum herstellen

Country Status (4)

Country Link
US (1) US6787805B1 (de)
EP (1) EP1111686A4 (de)
KR (1) KR100695047B1 (de)
WO (1) WO2000079601A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423632B1 (en) * 2000-07-21 2002-07-23 Motorola, Inc. Semiconductor device and a process for forming the same
WO2004003970A2 (en) * 2002-06-26 2004-01-08 Semequip Inc. A semiconductor device and method of fabricating a semiconductor device
US6905976B2 (en) * 2003-05-06 2005-06-14 International Business Machines Corporation Structure and method of forming a notched gate field effect transistor
US7495313B2 (en) * 2004-07-22 2009-02-24 Board Of Trustees Of The Leland Stanford Junior University Germanium substrate-type materials and approach therefor
DE102004052581B4 (de) 2004-10-29 2008-11-20 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer CMOS-Gatestruktur mit einem vordotierten Halbleitergatematerial
JP2006278873A (ja) * 2005-03-30 2006-10-12 Seiko Epson Corp 半導体装置およびその製造方法
KR100652426B1 (ko) * 2005-08-16 2006-12-01 삼성전자주식회사 도펀트 침투를 방지한 반도체 소자의 커패시터 및 그제조방법
DE102006013721B4 (de) * 2006-03-24 2011-12-08 Infineon Technologies Ag Halbleiterschaltungsanordnung und zugehöriges Verfahren zur Temperaturerfassung
JPWO2021065578A1 (de) * 2019-10-04 2021-04-08

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101247A (en) * 1990-04-27 1992-03-31 North Carolina State University Germanium silicon dioxide gate MOSFET
JPH1027854A (ja) * 1996-07-10 1998-01-27 Sony Corp 半導体装置及びその製造方法
EP0887843A1 (de) * 1997-06-25 1998-12-30 France Telecom Verfahren zur Herstellung eines Transistors mit einem Silizium-Germanium-Gatter
US5861336A (en) * 1993-07-12 1999-01-19 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822022B1 (de) * 1969-11-21 1973-07-03
JPS63198373A (ja) * 1987-02-13 1988-08-17 Nec Corp 半導体装置およびその製造方法
JP2518334B2 (ja) 1988-01-20 1996-07-24 日立電線株式会社 耐捩じれ変形自己融着性エナメル線
JPH01117182A (ja) 1988-06-14 1989-05-10 Kunimune Kogyosho:Kk 糸止め付き糸ボビン
US5801444A (en) * 1989-09-29 1998-09-01 International Business Machines Corporation Multilevel electronic structures containing copper layer and copper-semiconductor layers
JP3061406B2 (ja) * 1990-09-28 2000-07-10 株式会社東芝 半導体装置
JP2876866B2 (ja) 1992-02-19 1999-03-31 日本電気株式会社 半導体装置
US5227333A (en) * 1992-02-27 1993-07-13 International Business Machines Corporation Local interconnection having a germanium layer
AU5669794A (en) * 1992-12-11 1994-07-04 Intel Corporation A mos transistor having a composite gate electrode and method of fabrication
JPH07202178A (ja) * 1993-12-28 1995-08-04 Toshiba Corp 半導体装置およびその製造方法
JPH07288323A (ja) * 1994-04-19 1995-10-31 Sony Corp 絶縁ゲート型電界効果トランジスタとその製法
US5608249A (en) * 1995-11-16 1997-03-04 Micron Technology, Inc. Reduced area storage node junction
KR100212693B1 (ko) * 1996-12-14 1999-08-02 권혁준 규소/규소게르마늄 모스 전계 트랜지스터 및 그 제조방법
JPH113999A (ja) 1997-06-13 1999-01-06 Sony Corp 半導体装置の製造方法
JPH1117182A (ja) * 1997-06-26 1999-01-22 Sony Corp 半導体装置およびその製造方法
JP3039493B2 (ja) * 1997-11-28 2000-05-08 日本電気株式会社 基板の洗浄方法及び洗浄溶液

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5101247A (en) * 1990-04-27 1992-03-31 North Carolina State University Germanium silicon dioxide gate MOSFET
US5861336A (en) * 1993-07-12 1999-01-19 Peregrine Semiconductor Corporation High-frequency wireless communication system on a single ultrathin silicon on sapphire chip
JPH1027854A (ja) * 1996-07-10 1998-01-27 Sony Corp 半導体装置及びその製造方法
EP0887843A1 (de) * 1997-06-25 1998-12-30 France Telecom Verfahren zur Herstellung eines Transistors mit einem Silizium-Germanium-Gatter
US5998289A (en) * 1997-06-25 1999-12-07 France Telecom Process for obtaining a transistor having a silicon-germanium gate

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
ALIEU J ET AL: "Pure Ge mid-gap gate within an industrial high performance and low standby current 0.18 /spl mu/m CMOS process", VLSI TECHNOLOGY, 1998. DIGEST OF TECHNICAL PAPERS. 1998 SYMPOSIUM ON HONOLULU, HI, USA 9-11 JUNE 1998, NEW YORK, NY, USA,IEEE, US, 9 June 1998 (1998-06-09), pages 192 - 193, XP010291204, ISBN: 0-7803-4770-6 *
BENSAHEL D ET AL: "SINGLE-WAFER PROCESSING OF IN SITU-DOPED POLYCRYSTALLINE SI AND SI1-XGEX", SOLID STATE TECHNOLOGY, COWAN PUBL.CORP. WASHINGTON, US, vol. 41, no. 3, March 1998 (1998-03-01), pages S05 - S06,S08,S1, XP000735101, ISSN: 0038-111X *
OEZTUERK M C ET AL: "RAPID THERMAL CHEMICAL VAPOR DEPOSITION OF GERMANIUM AND GERMANIUM/SILICON ALLOYS ON SILICON: NEW APPLICATIONS IN THE FABRICATION OF MOS TRANSISTORS", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, vol. 224, 30 April 1991 (1991-04-30), pages 223 - 234, XP000198032, ISSN: 0272-9172 *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 05 30 April 1998 (1998-04-30) *
PONOMAREV Y V ET AL: "Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 /spl mu/m CMOS technology", ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7 December 1997 (1997-12-07), pages 829 - 832, XP010265631, ISBN: 0-7803-4100-7 *

Also Published As

Publication number Publication date
KR100695047B1 (ko) 2007-03-14
KR20010072870A (ko) 2001-07-31
EP1111686A1 (de) 2001-06-27
US6787805B1 (en) 2004-09-07
WO2000079601A1 (fr) 2000-12-28

Similar Documents

Publication Publication Date Title
GB2369243B (en) Semiconductor device and method of manufacture
GB2359191B (en) Semiconductor device and method of manufacturing the same
SG100769A1 (en) Semiconductor device and method of manufacturing the same
EP1146555A4 (de) Halbleiter und seine herstellung
GB2329069B (en) Semiconductor device and method of manufacture
SG85171A1 (en) Method of manufacturing semiconductor device
GB0016949D0 (en) Reticle and method of fabricating semiconductor device
EP1310988A4 (de) Halbleiterbauelement und verfahren zu seiner herstellung
HK1053012A1 (en) Semiconductor device and forming method thereof
EP1187183A4 (de) Herstellung eines halbleiterteiles und zugehörige fertigungsstrasse
GB2332777B (en) Semiconductor device and method of manufacture
GB2345791B (en) Semiconductor device and fabrication method therefor
GB2344464B (en) Semiconductor device and manufacturing method thereof
GB2373635B (en) Semiconductor device and method of manufacturing the same
GB2336469B (en) Semiconductor device and manufacturing method of the same
AU2692500A (en) Semiconductor device and method of manufacture thereof
AU2002228766A1 (en) Semiconductor device and method of making same
SG84573A1 (en) Semiconductor device and method of fabricating the same
EP1111686A4 (de) Halbleiter gegenstand und verfahren zum herstellen
GB9924626D0 (en) Semiconductor device and method of forming the same
GB2336717B (en) Semiconductor device and method of making the same
EP1146573A4 (de) Halbleiter und seine herstellung
EP1170784A4 (de) Halbleiter und seine herstellungsmethode
AU2073599A (en) Semiconductor device and method of production thereof and semiconductor mountingstructure and method
GB2348540B (en) Manufacturing method of semiconductor device

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE

AX Request for extension of the european patent

Free format text: AL;LT;LV;MK;RO;SI

17P Request for examination filed

Effective date: 20010530

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 20050331

RIC1 Information provided on ipc code assigned before grant

Ipc: 7H 01L 21/8238 B

Ipc: 7H 01L 29/78 A

Ipc: 7H 01L 21/28 B

Ipc: 7H 01L 29/49 B

17Q First examination report despatched

Effective date: 20050630

17Q First examination report despatched

Effective date: 20050630

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20071016