EP1064678A1 - Flux cleaning for flip chip technology using environmentally friendly solvents - Google Patents

Flux cleaning for flip chip technology using environmentally friendly solvents

Info

Publication number
EP1064678A1
EP1064678A1 EP99912667A EP99912667A EP1064678A1 EP 1064678 A1 EP1064678 A1 EP 1064678A1 EP 99912667 A EP99912667 A EP 99912667A EP 99912667 A EP99912667 A EP 99912667A EP 1064678 A1 EP1064678 A1 EP 1064678A1
Authority
EP
European Patent Office
Prior art keywords
substrate
die
flux
flip chip
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP99912667A
Other languages
German (de)
English (en)
French (fr)
Inventor
Raj N. Master
Orion K. Starr
Mohammad Zubair Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of EP1064678A1 publication Critical patent/EP1064678A1/en
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/097Cleaning
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors

Definitions

  • This invention relates generally to a method of assembly of a semiconductor device in a flip chip configuration. More specifically this invention relates to a method of flux cleaning using environmentally friendly solvents.
  • Flip chip technology is defined as mounting the semiconductor chip to a substrate with any kind of interconnect materials and methods such as fluxless solder bumps, tape- automated bonding (TAB), wire interconnects, conductive polymers, anisotropic conductive adhesives, metallurgy bumps, compliant bumps, and pressure contacts as long as the active chip surface is facing the substrate.
  • interconnect materials and methods such as fluxless solder bumps, tape- automated bonding (TAB), wire interconnects, conductive polymers, anisotropic conductive adhesives, metallurgy bumps, compliant bumps, and pressure contacts as long as the active chip surface is facing the substrate.
  • the flip chip interconnects are being used in the semiconductor industry primarily because of their high I/O density capability, small profiles, and good electrical performance. Demands on performance, reliability, and cost have resulted in the development of a variety of flip chip technologies using solder, conductive epoxy, hard metal bump (such as gold) and anisotropic conductive epoxy interconnects. Among these materials, solders have remained a preferred choice as the material forming electrical connections in flip chip assemblies.
  • Solder flip chip interconnect systems consist of essentially three basic elements. These include the chip, the solder bump, and the substrate. The bumps are first deposited on a wafer and reflowed. The wafer is then diced into chips. The chips are flipped over, aligned to a substrate, tacked, and reflowed. .An underfill may be used to improve the reliability of the interconnects.
  • Each of these elements and the processes used to assemble them together affect the performance and the cost of the interconnect system. Therefore, the performance and cost must be compared on the basis of the interconnect system as a whole, and not merely on any single element of the interconnect assembly.
  • the materials and processes involved in the manufacture of the flip chip interconnect system determine its performance.
  • the semiconductor device or the chip may be silicon or gallium arsenide.
  • the bond pad metallization on the wafer can be Ni-Au, Cr-Cu-Au, TiW-Cu, Ti-Cu, or TiW-Au.
  • the bump material can be one of a variety of Pb-based or Pb-free solders.
  • the substrate can be silicon, alumina, glass, or one of a variety of organic substrates.
  • the substrate metallization can be gold or copper. Underfills are used primarily to improve reliability of flip chip interconnect systems. These materials fill the gap between the chip and substrate around the solder joints, reducing the thermal stresses imposed on the solder joint.
  • the process step used in the manufacture of the interconnect systems can be varied and include process technologies such as plating, evaporation, wire bumping, dispensing, and printing.
  • the reflow process may be performed in air with flux or in a controlled ambient.
  • Flip chip bonding processes include those based on the controlled-collapse chip connection (C4) approach or those in which the geometry of the bump is controlled by the bonding equipment.
  • C4 controlled-collapse chip connection
  • the assembly of a typical flip chip interconnect system involves two overall tasks: (1) flip chip bonding and (2) encapsulation or underfill. During flip chip bonding, the bumped die is first aligned and attached to the bond pads on the substrate using a tacky flux.
  • the bumps can be formed on the substrate or on both the substrate and die and that the bond pads can be formed on the die. Then the module is heated so that the solder melts and forms a metallurgical bond with the bond pad (the reflow process). Following the flip chip bonding process the flux residues are cleaned.
  • the solvent materials necessary to clean the flux residues are typically highly flammable and/or hazardous materials and some may be carcinogenic. Typical solvents used for such cleaning are
  • Xylene, Toluene, and Terpene which are either safety hazards or health hazards. Because of these characteristics of the solvent materials, the cleaning step is very expensive because it requires highly specialized equipment. The equipment may have to be explosion proof, it may have to have special filtering systems to protect the surrounding community as well as the technicians from air pollution and/or water pollution.
  • the foregoing and other objects and advantages are attained by a method of assembling a substrate and die in a flip chip configuration using an environmentally friendly non-hazardous solvent.
  • Ionox from Kyzen Corporation is used as the cleaning solvent.
  • the cleaning process is carried out with the following process parameters: time 10 -30 minutes temperature 70 - 90°C pressure 40 - 70 psi rotation speed and reversals 100-1000 rpm and 25 - reversal cycles.
  • the method of the invention uses a non-hazardous cleaning solvent and allows the use of standard commercially available cleaning equipment.
  • Figure 1 is a flow diagram showing the method of assembling a substrate and die in a flip chip configuration in accordance with the present invention.
  • Figures 2A-2F show views of the substrate/die during the process steps of assembling the substrate/die module in accordance with the present invention.
  • Figure 1 is a flow diagram showing the method of assembling a chip and a substrate in a flip chip configuration in accordance with the present invention.
  • Figure 1 shows a substrate, indicated at 100 that has been formed by standard methods in the semiconductor manufacturing art.
  • the substrate could be silicon, alumina (ceramic), glass, or one of a variety of organic substrates. Bond pads or solder bumps are formed on the substrate. Flux is applied to the substrate and bond pads or solder bumps as indicated at 102 by either brushing or spraying the flux onto the appropriate portion of the substrate.
  • the die, indicated at 104 is a normal die and can be made on a silicon substrate or a gallium arsenide substrate.
  • Bond pads or solder bumps are formed on the die and correspond to the bond pads or solder bumps formed on the substrate as discussed above.
  • the bump material can be a variety of Pb-based or Pb-free solders.
  • the bond pad metallization of the wafer can be Ni-Au, Cr-Cu-Au, TiW-Cu, Ti-Cu, or TiW-Au.
  • the die is placed on the substrate in a flip chip configuration as indicated at 106.
  • a flip chip configuration is one in which the active surface area is placed "face-down" onto the substrate.
  • the substrate/chip combination is then heated to cause the solder to reflow as indicated at 108.
  • the substrate/chip combination is cleaned as indicated at 110, and underfill is applied between the substrate and die as indicated at 112 and subjected to normal manufacturing steps as indicated at 114.
  • Figures 2A-2F show views of the substrate, die, and substrate/die module during the process steps of assembling the substrate/die module in accordance with the present invention.
  • Figure 2A shows a substrate 200 with bond pads, one of which is indicated at 202 formed on the substrate 200.
  • the substrate could be silicon, alumina (ceramic), glass, or one of a variety of organic substrates.
  • the bond pad metallization of the wafer can be Ni-Au, Cr-Cu-Au, TiW-Cu, Ti-Cu, or TiW-Au.
  • the selection of the bond pad material is partially dependent upon the material of the substrate. For example, if the substrate is a ceramic material, the bond pad material is Ni-Au and if the substrate is an organic material, the bond pad material is Cu.
  • Figure 2B shows a flux 204 having been applied to the substrate 200.
  • One of the main purposes of the flux 204 is to provide a tacky surface to hold the die (to be discussed) to the substrate 200 during the reflow process (to be discussed).
  • Fluxes commonly contain three constituents: a solvent (e.g., alcohol), a vehicle (e.g., a high-boiling-point solvent such as aliphatic alcohol), and an activator (e.g., carboxylic acids).
  • the solvent facilitates uniform spreading of the flux 204 on the bond pads.
  • the reflow process usually consists of a preheat step where the solvent is vaporized. This promotes a uniform coating of the flux 204 on the solder and bond pad metallization.
  • the flux 204 also becomes more viscous and tacky. Further increase in temperature causes the vehicle to flow along with the activator.
  • the activator reduces the oxides, while both the vehicle and activator volatilize.
  • Figure 2C shows a die 206 with bumps, one of which is indicated at 208, formed on the active surface of the die 206.
  • the die 206 is placed face down on the substrate in a flip chip configuration forming a substrate/die module 210.
  • the tackiness of the flux 204 holds the die 206 is proper alignment with the substrate 200 so that the bond pads 202 and the solder bumps 208 are properly aligned.
  • the substrate/die module 210 is ready for the reflow step.
  • the solder bumps 208 are heated to a temperature above the melting point of the solder. When the solder melts, it forms a metallurgical bond with the bond pads 202.
  • FIG. 2D shows the substrate/die module 210 after the reflow process has been completed.
  • Flux residue areas one of which is indicated at 212, remain between the substrate 200 and the die 206.
  • the flux residue areas 212 commonly contain residues from the carrier, the wetting agent, and reaction by-products of the reduction reaction.
  • the flux residue areas 212 as shown in interfere with the flow of underfill material (to be discussed below).
  • Figure 2E shows the substrate/die module 210 being subjected to a cleaning process, indicated to 214 in which a solvent material is utilized to remove the flux residue areas 212.
  • the flux residue areas 212 are formed during the reflow processes and are polymerized residue. This is typical of all rosin based activated fluxes.
  • a cleaning process has been developed that uses Ionox, a commercially available environmentally friendly solvent made by Kyzen Corporation.
  • the developed cleaning process uses commercially available centrifugal cleaning equipment.
  • the developed process has optimized process parameters such as time, temperature and pressure as well as rotation speed and reversals to effect efficient cleaning between the die 206 and substrate 200.
  • the optimized process parameters are as follows: 1. time 10-30 minutes in Ionox, 2. temperature 70-90 °C
  • Figure 2F shows the substrate/die module 210 with an underfill material
  • the underfill material is typically an epoxy.
  • the underfill provides two functions. The first function of the underfill material is to protect the chip and interconnects during subsequent processes. The second function of the underfill is to improve the reliability of the interconnect system.
  • the results and advantages of using an environmentally friendly solvent can now be more fully realized.
  • the use of a non-hazardous cleaning solvent allows the use commercially available cleaning equipment.

Landscapes

  • Wire Bonding (AREA)
EP99912667A 1998-03-17 1999-03-17 Flux cleaning for flip chip technology using environmentally friendly solvents Ceased EP1064678A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/040,651 US5988485A (en) 1998-03-17 1998-03-17 Flux cleaning for flip chip technology using environmentally friendly solvents
US40651 1998-03-17
PCT/US1999/005927 WO1999048142A1 (en) 1998-03-17 1999-03-17 Flux cleaning for flip chip technology using environmentally friendly solvents

Publications (1)

Publication Number Publication Date
EP1064678A1 true EP1064678A1 (en) 2001-01-03

Family

ID=21912175

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99912667A Ceased EP1064678A1 (en) 1998-03-17 1999-03-17 Flux cleaning for flip chip technology using environmentally friendly solvents

Country Status (5)

Country Link
US (1) US5988485A (https=)
EP (1) EP1064678A1 (https=)
JP (1) JP2002507837A (https=)
KR (1) KR100644420B1 (https=)
WO (1) WO1999048142A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6475828B1 (en) * 1999-11-10 2002-11-05 Lsi Logic Corporation Method of using both a non-filled flux underfill and a filled flux underfill to manufacture a flip-chip
US6234379B1 (en) * 2000-02-28 2001-05-22 Nordson Corporation No-flow flux and underfill dispensing methods
JP2001332575A (ja) * 2000-05-19 2001-11-30 Sony Corp フラックス洗浄方法及び半導体装置の製造方法
US6333210B1 (en) 2000-05-25 2001-12-25 Advanced Micro Devices, Inc. Process of ensuring detect free placement by solder coating on package pads
US6258612B1 (en) 2000-06-28 2001-07-10 Advanced Micro Devices, Inc. Determination of flux prior to package assembly
US6367679B1 (en) 2000-06-28 2002-04-09 Advanced Micro Devices, Inc. Detection of flux residue
US6597444B1 (en) 2000-06-28 2003-07-22 Advanced Micro Devices, Inc. Determination of flux coverage
US6399902B1 (en) 2000-08-01 2002-06-04 Advanced Micro Devices, Inc. Inline flux measurement system
US6433425B1 (en) * 2000-09-12 2002-08-13 International Business Machines Corporation Electronic package interconnect structure comprising lead-free solders
US6578755B1 (en) * 2000-09-22 2003-06-17 Flip Chip Technologies, L.L.C. Polymer collar for solder bumps
US6926190B2 (en) * 2002-03-25 2005-08-09 Micron Technology, Inc. Integrated circuit assemblies and assembly methods
DE10303588B3 (de) * 2003-01-29 2004-08-26 Infineon Technologies Ag Verfahren zur vertikalen Montage von Halbleiterbauelementen
US20050067468A1 (en) * 2003-09-30 2005-03-31 Daoqiang Lu Fluxes for flip chip assembly using water soluble polymers
US7842948B2 (en) 2004-02-27 2010-11-30 Nvidia Corporation Flip chip semiconductor die internal signal access system and method
US7666714B2 (en) * 2006-12-29 2010-02-23 Intel Corporation Assembly of thin die coreless package
JP2021536131A (ja) 2018-09-04 2021-12-23 中芯集成電路(寧波)有限公司 ウェハレベルパッケージング方法およびパッケージング構造
CN110875203B (zh) * 2018-09-04 2021-11-09 中芯集成电路(宁波)有限公司 晶圆级封装方法以及封装结构

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3840098C1 (https=) * 1988-11-28 1989-12-21 Helmut Walter 8900 Augsburg De Leicht
US5128057A (en) * 1989-09-29 1992-07-07 Kyzen Corporation Furfuryl alcohol mixtures for use as cleaning agents
JPH0537136A (ja) * 1991-08-02 1993-02-12 Nec Corp フラツクスの洗浄方法
US5125560A (en) * 1991-11-04 1992-06-30 At&T Bell Laboratories Method of soldering including removal of flux residue
US5288332A (en) * 1993-02-05 1994-02-22 Honeywell Inc. A process for removing corrosive by-products from a circuit assembly
JP2795788B2 (ja) * 1993-02-18 1998-09-10 シャープ株式会社 半導体チップの実装方法
US5668058A (en) * 1995-12-28 1997-09-16 Nec Corporation Method of producing a flip chip

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO9948142A1 *

Also Published As

Publication number Publication date
WO1999048142A1 (en) 1999-09-23
JP2002507837A (ja) 2002-03-12
US5988485A (en) 1999-11-23
KR20010041857A (ko) 2001-05-25
KR100644420B1 (ko) 2006-11-10

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