EP0987966B1 - Schmuckstein - Google Patents

Schmuckstein Download PDF

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Publication number
EP0987966B1
EP0987966B1 EP98952636A EP98952636A EP0987966B1 EP 0987966 B1 EP0987966 B1 EP 0987966B1 EP 98952636 A EP98952636 A EP 98952636A EP 98952636 A EP98952636 A EP 98952636A EP 0987966 B1 EP0987966 B1 EP 0987966B1
Authority
EP
European Patent Office
Prior art keywords
decorative stone
pyramid
stone according
carrier
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP98952636A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0987966A1 (de
Inventor
Ernst Michael Winter
Lothar SCHÄFER
Thorsten Matthee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Winter CVD Technik GmbH
Original Assignee
Winter CVD Technik GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winter CVD Technik GmbH filed Critical Winter CVD Technik GmbH
Publication of EP0987966A1 publication Critical patent/EP0987966A1/de
Application granted granted Critical
Publication of EP0987966B1 publication Critical patent/EP0987966B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • A—HUMAN NECESSITIES
    • A44—HABERDASHERY; JEWELLERY
    • A44C—PERSONAL ADORNMENTS, e.g. JEWELLERY; COINS
    • A44C27/00—Making jewellery or other personal adornments
    • A44C27/001—Materials for manufacturing jewellery
    • A44C27/005—Coating layers for jewellery
    • A44C27/007—Non-metallic coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Definitions

  • the invention relates to artificial gemstones.
  • Gemstones especially gemstones, are made before they are held in the metal body of a piece of jewelry, sanded or sanded to the incident Spectrally decomposing and reflecting light, thereby brings about the brilliance and fire of a gem becomes.
  • this sets a minimum size and purity ahead of the gem. So about two are suitable
  • Third of the mined diamonds are not for production of gemstones by grinding them because either have too little physicality or depth or only industrial because of their color or inclusions have it recycled (for technical purposes).
  • the diamond maintains the brilliance or shine all in that a large part of the in the gem incident light almost in the direction is scattered back from where it came from. This is achieved in that the light which is transmitted through the upper facets fell into the diamond crystal is reflected in the lower brilliant area and can emerge again through the upper facets.
  • the Light is generated in at least two reflection steps mirrored by a total of about (180 ° ⁇ x °). The order the facet angle to each other must be the optical one Properties of the diamond / air interface wear so that the angle of total reflection never exceeded becomes.
  • the angles of the light beam path are getting bigger than that of the total reflection angle. That is, the Light is reflected back upwards, on the other hand the light must shine on the top facets and the chalkboard impinging at such an angle that the light can leak.
  • the diamond diamonds are not like that ground that the light is thrown back exactly in that direction from which it came (like it would be the case with the cat’s eye). Rather lies between incoming and outgoing beam an opening angle, which leads to the eye-catching reflexes. The exit angle is due to the dispersion for different wavelengths different.
  • the dispersion is essential for the fire of the diamond of the light in the diamond that causes the light is broken down like a prism and then as Spectral colors are perceived by the eye.
  • the object of the invention is to create artificial Gemstones obtained by vapor deposition large layers of gemstone, which despite the unfavorable dimensions, d. H. of limited strength these layers get an attractive appearance.
  • This object is achieved with a gem solved that from a preferably tabular Carrier or substrate consists of one surface has at least one pyramid-shaped depression and preferably by vapor deposition gemstone layer obtained by the CVD or PVD method wearing.
  • the gemstone- especially diamond layer one gemstone according to the invention has brilliance, must whose on the carrier, e.g. B. a silicon wafer Underside be designed accordingly, so that it is like a single-crystal natural diamond to reflect much of the incident Light comes.
  • a silicon wafer Underside be designed accordingly, so that it is like a single-crystal natural diamond to reflect much of the incident Light comes.
  • This can be done by an appropriate Pretreatment of the surface to be coated Silicon wafers can be achieved. After this pretreatment the silicon wafer has the necessary shape as Negative form on, so that the back or bottom the diamond layer that forms accordingly receives positive form.
  • such materials are also suitable, such as precious metals, tungsten, molybdenum or hard metal, that can be coated well with diamond and in the surface of which incorporates a corresponding structure can be.
  • Incorporation of the structure in the to be coated Carrier can either depending on its material mechanically, e.g. B. by grinding a certain Profiles, electrolytically or, in particular for a silicon wafer, chemical or plasma technology can be achieved by etching.
  • isotropic as well as anisotropic processes are used.
  • anisotropic etchant z. B. KOH. This base leads to the formation of pyramidal etching pits in the single crystal wafer.
  • Etching mask can also be done using an isotropic etchant a pyramidal structure etched into a base become.
  • a suitable composition of the etching solution can create the required angles of the pyramid. As mentioned above, should be a gradual mirroring by approximately 180 ° ⁇ x °, the angles of the Pyramid to be adjusted accordingly.
  • edge areas of the carrier of the gemstone layer can have different pyramid angles than in the middle area can be set. But it is also possible that reflective surfaces (facets) on the underside align the layer with different angles, to be independent in this way the brilliance and the fire from each other.
  • the angles of the facets are chosen so that the light in the Gem layer reflected back and forth several times is, causing a strong splitting of the spectral Colors is achieved.
  • Orientations other than (100) or (111) Wafers are used. What matters is that targeted interaction of crystal orientation the gem layer and direction of the etching attack, to achieve an optimal optical effect.
  • a polycrystalline, e.g. B. after CVD process produced artificial diamond layer are still unlike a diamond single crystal Grain boundaries present by a different Refractive index as additional refractive areas are taken into account.
  • the grain boundaries advantageously in their structure, for. B. must be columnar to be positive To have an effect on brilliance and fire. In each Fall must be the influence of the grain boundaries in the optical Effect.
  • the light can also are scattered back by the fact that the back or Bottom of the gas phase gem, especially CVD diamonds additionally z. B. by gold or titanium is mirrored. Then the reflection is easy by reflection on the gold or titanium surface.
  • the surface of the artificial diamond layer is advantageous, which is subsequently ground into it.
  • the angles in the bottom are modified Adjust exit conditions.
  • Gemstone-coated supports can be used as gemstones in a conventional manner, e.g. B. in the metal body of a piece of jewelry.
  • the one bearing the deposited layer of gemstone does not have to be flat his; it can e.g. B. be convex to artificial Gemstones in the shape of a cabochon or boutton to obtain.
  • artificial gemstones especially diamonds not only with special optical Characteristics like brilliance and fire, but also with surface dimensions, e.g. B. by multiple dimensioning, win as with those in the Natural stones not nearly accessible are and also with other synthetic methods, in particular the high-pressure high-temperature technology from economic-technical Reasons are not available.
  • the gemstones according to the invention can be used in the production its own due to the composition of the gas phase Body color (e.g. blue through boron or yellow through Nitrogen) are awarded, what their use in every conceivable piece of jewelry or every conceivable Embellishment with precious stones enables.
  • the gem layer 1 has on the underside Variety of pyramid-shaped elevations 2 with one Angle "A" on and is at the top with a Octagonal facet cut.
  • the carrier on which the gemstone layer is applied does not have to be the dimensions of the later gem to have. From a large support with Gemstone layer can be separated and made into one Gemstone can be processed or edited.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Adornments (AREA)
  • Laminated Bodies (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Magnetic Heads (AREA)
  • Resistance Heating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cosmetics (AREA)
EP98952636A 1997-09-30 1998-09-23 Schmuckstein Expired - Lifetime EP0987966B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE29717496U 1997-09-30
DE29717496 1997-09-30
PCT/EP1998/006074 WO1999016328A1 (de) 1997-09-30 1998-09-23 Schmuckstein

Publications (2)

Publication Number Publication Date
EP0987966A1 EP0987966A1 (de) 2000-03-29
EP0987966B1 true EP0987966B1 (de) 2002-02-06

Family

ID=8046687

Family Applications (1)

Application Number Title Priority Date Filing Date
EP98952636A Expired - Lifetime EP0987966B1 (de) 1997-09-30 1998-09-23 Schmuckstein

Country Status (11)

Country Link
US (1) US6794014B2 (enrdf_load_stackoverflow)
EP (1) EP0987966B1 (enrdf_load_stackoverflow)
JP (1) JP2001509065A (enrdf_load_stackoverflow)
CN (1) CN1167368C (enrdf_load_stackoverflow)
AT (1) ATE212803T1 (enrdf_load_stackoverflow)
CA (1) CA2271736C (enrdf_load_stackoverflow)
DE (1) DE59803021D1 (enrdf_load_stackoverflow)
ES (1) ES2172227T3 (enrdf_load_stackoverflow)
IN (1) IN190683B (enrdf_load_stackoverflow)
RU (1) RU2189769C2 (enrdf_load_stackoverflow)
WO (1) WO1999016328A1 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030177753A1 (en) * 2002-03-21 2003-09-25 Ronen Seliktar Decorative, diamond-cut jewelry surface
US6862898B2 (en) * 2002-03-21 2005-03-08 Select Jewelry, Inc. Article of jewelry
US7526928B1 (en) 2002-11-04 2009-05-05 Azotic Coating Technology, Inc. Multi-color gemstones and gemstone coating deposition technology
US6997014B2 (en) * 2002-11-04 2006-02-14 Azotic Coating Technology, Inc. Coatings for gemstones and other decorative objects
RU2349239C2 (ru) * 2006-11-27 2009-03-20 Силект Джуэлри, Инк. Ювелирное изделие
AT507689B1 (de) * 2008-12-19 2011-08-15 Swarovski D Kg Schmucksteinbesetzte paillette
AT508020B1 (de) * 2009-03-26 2010-10-15 Swarovski & Co Facettiert geschliffener verbundkörper
CN103349404B (zh) * 2013-08-02 2015-05-13 深圳市金艺珠宝有限公司 带多棱面反射槽饰品的加工方法及其加工设备
GB2533097A (en) * 2014-12-08 2016-06-15 Crystal Clear Jewellery Ltd Creating optical effects

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US229328A (en) * 1880-06-29 Fbanois ed meyee
US2521846A (en) * 1944-07-26 1950-09-12 Waylande C Gregory Composite glass and metal article
DE2444705C3 (de) * 1974-09-19 1980-09-04 Ernst Winter & Sohn, 2000 Hamburg Schmuckstein mit geschliffenen Ober- und Unterteilen
FR2547775B1 (fr) * 1983-06-23 1987-12-18 Metalem Sa Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore
JP2580691B2 (ja) * 1988-03-28 1997-02-12 三菱マテリアル株式会社 人工ダイヤモンドコートの金および金合金製装飾品
ATE83134T1 (de) * 1989-05-23 1992-12-15 Bock & Schupp Schmuckstueck.
JPH0363002A (ja) * 1989-07-31 1991-03-19 Sachiko Kosaka 宝石状反射装飾体
US5431028A (en) * 1991-08-21 1995-07-11 Lampert; Dennis Metal jewelry article having artificial diamond baguettes formed therein and method of manufacturing thereof
RU2027390C1 (ru) * 1991-10-08 1995-01-27 Скорбун Сергей Дмитриевич Искусственный ювелирный камень
WO1993017593A1 (en) * 1992-03-06 1993-09-16 Komatsu Electronic Metals Co., Ltd. Decorative silicon article
US6197428B1 (en) * 1994-08-26 2001-03-06 Deposition Sciences, Inc. Gemstones and decorative objects comprising a substrate and an optical interference film
US5882786A (en) * 1996-11-15 1999-03-16 C3, Inc. Gemstones formed of silicon carbide with diamond coating

Also Published As

Publication number Publication date
US20010049003A1 (en) 2001-12-06
RU2189769C2 (ru) 2002-09-27
EP0987966A1 (de) 2000-03-29
JP2001509065A (ja) 2001-07-10
ATE212803T1 (de) 2002-02-15
WO1999016328A1 (de) 1999-04-08
ES2172227T3 (es) 2002-09-16
US6794014B2 (en) 2004-09-21
CN1241120A (zh) 2000-01-12
CA2271736C (en) 2005-06-14
CN1167368C (zh) 2004-09-22
DE59803021D1 (de) 2002-03-21
CA2271736A1 (en) 1999-04-08
IN190683B (enrdf_load_stackoverflow) 2003-08-16

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