EP0931349A1 - Composant emetteur et/ou detecteur pour rayonnement d'ondes de l'ordre du sous-millimetre et procede permettant de le produire - Google Patents

Composant emetteur et/ou detecteur pour rayonnement d'ondes de l'ordre du sous-millimetre et procede permettant de le produire

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Publication number
EP0931349A1
EP0931349A1 EP97935470A EP97935470A EP0931349A1 EP 0931349 A1 EP0931349 A1 EP 0931349A1 EP 97935470 A EP97935470 A EP 97935470A EP 97935470 A EP97935470 A EP 97935470A EP 0931349 A1 EP0931349 A1 EP 0931349A1
Authority
EP
European Patent Office
Prior art keywords
component
contacts
layer
component according
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97935470A
Other languages
German (de)
English (en)
Inventor
Alfred Zehe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oxxel Oxide Electronics Tech GmbH
Original Assignee
Oxxel Oxide Electronics Tech GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oxxel Oxide Electronics Tech GmbH filed Critical Oxxel Oxide Electronics Tech GmbH
Publication of EP0931349A1 publication Critical patent/EP0931349A1/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N69/00—Integrated devices, or assemblies of multiple devices, comprising at least one superconducting element covered by group H10N60/00

Definitions

  • the invention relates to a superconducting component, production technologies and fields of application and, in particular, to a novel emitter and / or detector for the sub-millimeter wave area, as well as its diverse applications.
  • the power of the emitted radiation also increases with the number of Josephson contacts and can also be considerable in large arrangements (P> 1 mW), which is sufficient for many practical applications [Bindeslev Hansen and Lindelof 1984; Jain et al. 1984; Co- nopka et al. 1994, Wiesenfeld et al. 1994] It is important that a good impedance matching to the load resistance (eg the free space) is achieved, because otherwise the majority of the radiation does not emerge from the component, but is used up inside by multiple reflection
  • 3,725,213 describes a superconducting barrier component and its production technology which, in addition to other objectives, is also suitable as a generator and detector for millimeter-wave and sub-millimeter-wave radiation and is based on a granular structure of the superconducting material Sensitivity due to the summation of many Josephson contacts between crystal grains, there are few possibilities for reproducible production, electronic control, phase synchronization and impedance matching to the vacuum.
  • This component can conduct normally between the two states via a current-pulse-induced magnetic field and are switched superconducting, however, no attempt is made to control the emitted radiation frequency via the magnetic field-dependent energy gap
  • a superconducting component is described in US Pat. No. 4,837,604, which uses vertical stacking sequences of Josephson contacts and a serial interconnection of stacking sequences. It is designed as a switch with 3 electrical contacts and is intended to be simple Josephson contacts or lateral arrangements of such contacts in analog and digital Switching arrangements without radiation emission is not a goal for the component, nor would its technical design allow such a goal
  • a disadvantage of this component is its expressive limitation to a 2-dimensional flat arrangement of adjacent Josephson contacts on a chip.
  • Such a geometry implies a strict limitation of the maximum possible number of Josephson contacts.
  • the minimum area of a single contact is around 1 ⁇ m due to the limited performance of photolithography.
  • the requirements for uniformity are high, a considerable critical current is required (not less than 1mA for optimal performance), which is also via lines with low
  • supplying contact resistance limits the requirement for phase synchronization Longitudinal expansion of the component to about ⁇ 4, a value that is about 75 ⁇ m for a frequency of 1 THz. If one allows small distances between the contacts, one can expect a maximum of one to two thousand such individual elements.
  • EP 446146 describes a three-layer Josephson contact which has superconducting electrodes on both sides, which consist of LyBa 2 Cu 3 O (Ly is Y or a rare earth metal, 6 ⁇ y ⁇ 7).
  • the non-superconducting barrier consists here from Bi 2 Y Sr y Cu z O w , 0 ⁇ x ⁇ 2, 1 ⁇ y ⁇ 3, 1 ⁇ z ⁇ 3, and 6 ⁇ w ⁇ 13
  • information on the properties of the component such as BI c , Rrust, IV characteristic, microwave modulation
  • a magnetic control mode for the emitted or detected radiation frequency is described in EP 513,557, where the component according to the invention consists of vertical stacking sequences of Josephson contacts, which also have side-mounted galvanic connections between each pair of adjacent superconductor / barrier / superconductor structures (SIS Structures), a further superconducting layer is provided, which is separated on both sides by an insulator layer from the adjacent Josephson contact. This layer is intended to control the individual component by passing a current through lateral contacts through this control layer (see also US Pat. No. 3,725,213). , a magnetic field is to be generated which influences the energy gap of the Josephson contact
  • This component has several disadvantages, which make its practical implementation impossible within the framework of the currently known material properties and available microfabrication technologies.
  • its manufacture requires the deposition of superconducting contacts of approximately 0.01 ⁇ m in width over insulating layers on two opposite side faces from perpendicular to it grown stack structures with Josephson contacts No technology is currently available for this.
  • no superconductors are known which generate such large currents to generate the required high magnetic can withstand field strengths that would be required to reduce the energy gas in high-temperature superconductors within the limits of the required geometric component dimensions.
  • cuprate superconductors can be understood as natural (intrinsic) stacking sequences of Josephsen contacts with a distance of 6 .. 25 A.
  • a theoretical model for a stacking sequence of Josephson-coupled superconducting layers was published 25 years ago [by Lawrence and Doniach 1971] and has been extensively investigated since then. The model's predictions relate to a non-linear current-voltage (I-V) characteristic, microwave radiation-induced I-V stages (Shapiro stages), and microwave emission by applying DC voltage.
  • I-V current-voltage
  • the radiation emission must result as a superposition of coherent (narrow-band) radiation, which has also been observed [Schlenga et al. 1995, Müller 1996].
  • These differences in the properties of the Josephson contacts result from imperfect crystal growth and the lithography process to define the mesa structures, which also leads to differences in the cross-sectional area of the mesa structures.
  • Cuprat superconductors have relatively large critical current densities in the c-axis direction (10 4 -10 6 A / cm 2 ), so that such contacts have critical currents that are far too large, 100 mA and above.
  • Large Josephson contacts show many complex excitation modes, supra-currents flowing in both directions, fluxon movement, etc. Although these problems are known, the scientists in the groups mentioned were unable to significantly reduce the contact area due to excessive electrical resistances. Excessive electrical contact resistances cause the stack sequences to heat up significantly, which makes phase synchronization more difficult and the critical currents become inhomogeneous. In extreme cases, the Josephson contacts burn out
  • a current development that is suitable for practical implementation in a novel component is a technology for growing thin high-temperature cuprate superconductors in which the CuO 2 planes are not arranged parallel to the substrate. These can actually be perpendicular to the substrate, and we want to refer to such a thin layer as an 'a-axis' oriented layer.
  • Thin Bi 2 Sr 2 CaCu 2 O 8 layers with CuO 2 planes inclined by 45 ° have already been deposited on SrTiO 3 substrates using magnetron sputtering technology, which deviated from the (110) direction at an angle of 5 °. MgO substrates with the same characteristics and additional buffer layers were also used. [Tanimura et al. 1993]. The desired inclined a-axis orientation was demonstrated by means of RHEED (diffraction of high-energy electrons in the reflection position) and TEM (transmission electron microscopy) in cross-sectional imaging and by measuring transport properties.
  • RHEED diffiffraction of high-energy electrons in the reflection position
  • TEM transmission electron microscopy
  • the aim of the present invention is to provide means which allow the disadvantages and difficulties of known solutions discussed above to be avoided and to develop a component which avoids the disadvantages discussed.
  • Fig. 2 An "a-axis" oriented layer of a high-temperature superconductor.
  • the CuO 2 planes are perpendicular to the substrate
  • Fig. 3 A thin layer of a high-temperature superconductor with an "inclined a-axis".
  • the CuO 2 planes are inclined at an angle ⁇ with respect to the substrate
  • FIG. 4B An equivalent circuit for the component shown in FIG. 4A.
  • FIG. 5 A microbridge made from a high temperature superconductor with "inclined a-axis" growth direction.
  • the equivalent circuit corresponds to that of Fig. 4B
  • Fig 6 A A parallel arrangement of micro bridges, each containing stacking sequences of natural Josephson contacts, produced from an epitaxial “a-axis” or “inclined a-axis” layer by chemical or ion etching of trenches that electrically isolate the micro bridges from one another
  • FIG. 6 B An equivalent circuit for the component from Fig. 6 A Parallel connection of two linear stack sequences of Josephson contacts Fig. 7.A A parallel connection of three identical groups (clusters), each with 10 microbeads
  • Fig. 7 B An equivalent circuit for the component of Fig. 7 A
  • Fig. 8 An arrangement of several groups of micro bridges, each containing stacking sequences of Josephson contacts, along a strip line. The distance between the individual segments of combined emitters corresponds to the wavelength ⁇ of the electromagnetic radiation within the structure
  • FIG. 9 A basic structure of the device according to the invention, which contains a two-dimensional lateral arrangement of parallel micro-bridges (webs) (a) in a thin superconducting epitaxial layer, which are separated from one another by trenches (b) reaching down to the substrate and thus the current flow through the Steering micro-bridges or groups of micro-bridges
  • Each micro-bridge contains a stacking sequence of Josephson contacts, the arrangement of which is explained in FIGS. 2 and 3.
  • the electrical connections (c) and (d) allow a connection to external control electronics (e)
  • the invention is described in more detail below, the basic structural unit of which, that is to say the linear stacking sequence of Josephson contacts, is formed in a thin layer of high quality of a high-temperature superconductor, the thin layer forming a special epitaxial relationship with the Substrate is located
  • the crystallographic unit cell of all known cuprate superconductors represents an elongated parallelepiped with the side lengths a "b" 3 8 ⁇ and c> a, b.
  • c ⁇ 6 5 ⁇ in Lai -aS ⁇ 0 uCuO 4 c «l 1 7 ⁇ in YBa 2 Cu 3 O 7
  • the a-axis of the cuprate superconductor (or the b-axis, which is completely equivalent) is arranged perpendicular to the large area of the substrate, as shown in FIG. 2.
  • Such high-temperature superconductor thin layers are abbreviated as 'a-axis-oriented HTS layers'.
  • the substrate and its "cut” are selected so that the periodicity of the surface plane is 3.8 A x 6.5 A. Then there is the possibility that the layer with its a-axis grows perpendicular to the substrate. Another aspect is the number of "favorable contacts" between cations and anions of the layer and the substrate, which influence the energetic relationships in the interface. Of course, different substrates or at least substrate cuts are required for each different high-temperature superconductor.
  • FIG. 3 Another embodiment of the present invention is provided by a possible other epitaxial relationship shown in FIG. 3.
  • all CuO 2 planes of the cuprate films are grown at an angle to the substrate which is different from 0 ° and 90 °.
  • Such an angle depends on the substrate cut and can typically be 1 ° to 10 °, although larger or smaller angles are also possible.
  • Epita xial growth of such inclined a-axis-oriented HTS layers has already been carried out [Tanimura et al. 1993, Kataoka et al. 1993],
  • high-temperature cuprate superconductors such as Bi 2 Sr 2 CaCu 2 Og, Tl 2 Ba2Ca 2 Cu 3 O ⁇ o, HgBa2CaCu2 ⁇ 6. 2 , La ⁇ .85, Sr 0 .i5CuO 4 , etc. are natural superconducting superlattices of SIS ..., or SINIS type. If one of the orientations of the thin layer is used, then simple microbridges of the type shown in FIG .A. and Fig. 5 type, and thus thus generate a stacking sequence of Josephson contacts. Such stacking sequences in micro bridges represent the basic structure for the component according to the invention. However, in order to set an optimal performance of the component, several such micro bridges must be connected together in a superconducting network, as described in the text below.
  • a single stacking sequence of Josephson contacts is considered first.
  • the maximum allowed critical current through a single contact is approximately Larger values lead to very disturbed current-voltage characteristics due to the occurrence of special flow conditions.
  • the Josephson contact behaves like a "long contact" with currents flowing back and forth at different locations.
  • the electrical connections should consist of superconductors and should not lead to the formation of 'weak links', which then act as Josephson contacts in series with the stacking sequence of Josephson contacts in the mesa structure. In other words, high temperature superconducting electrodes of the same type of superconducting material are required.
  • FIG. 8 This provides the starting point for creating a very simple component, which is shown in FIG. 8 and consists of a parallel arrangement of M identical micro bridges. These are formed by simply creating a series of equidistant trenches down to the substrate by chemical or ion etching.
  • micro-bridges which are elongated by M times.
  • micro bridges for a-axis-oriented HTS layers.
  • M the total value of micro-bridges, which results from the number of micro-bridges per segment multiplied by the number of segments.
  • the embodiment of the component according to the invention discussed here has the additional advantage that the Josephson contacts have a very small cross-sectional area and thus a very small electrical capacitance C.
  • a pure a-axis-oriented YBa 2 Cu 3 O 7 film with a critical current in the c-direction of j c 10 6
  • a transmission line can be created through which the electromagnetic radiation is conducted will (see Fig. 8).
  • an insulating material e.g. SiO 2 , MgO, CeO 2 , etc.
  • a metal layer e.g. gold or silver
  • Phase synchronization can be achieved in such structures over fairly long distances, whereby the radiated power can become considerable.
  • the disadvantage of such lines is evident, however, that the operating frequency is quite fixed due to the group spacing ⁇ . Higher performance can only be achieved at the price of reduced tunability.
  • the present invention can be used in almost all fields of application in which millimeter and submillimeter-wave radiation is emitted or detected.
  • completely new fields of application open up of which some examples are given below:
  • Some lasers and reverse wave tubes operate in the submillimeter wave range, but they are voluminous radiation sources with high power consumption.
  • Solid state per oscillators, such as GUNN or IMPATT diodes, are limited to the millimeter wave range.
  • Josephson contacts which are matched to the external resistance without reflection and combined to form a network, can be controlled via a voltage and cover a wide frequency range up to the terahertz range.
  • Quantum detection of electromagnetic radiation a widely used concept in the visible and infrared spectral range - was previously only possible in the microwave and millimeter wave range in the narrow range of the spectrum, which is grouped around the resonance frequency of MASER amplifiers.
  • the standard methods for detection in this frequency range use nonlinear electrical resistances, e.g. Schottky diodes as classic rectifiers and superimposed receivers.
  • Their working principle is based on the conversion of received power between different frequency ranges, instead of the conversion of photons into electrical charge carriers, the functional principle of quantum detectors.
  • the abrupt non-linearity in the IU characteristic of SIS tunnel barriers for single-particle tunnels represents a useful property for resistive mixing.
  • Superimposed receivers with Josephson contacts as such mixing stages have a sensitivity that approaches the quantum limit at frequencies up to several GHz.
  • a photon current with an arrival rate of one photon per nanosecond is a typical value of the detection sensitivity of such a receiver.
  • CO interstellar carbon monoxide
  • the tunneltron component has the special property that it can be used as an excitation source for the medium to be spectroscoped and as a radiation receiver for the radiation emerging from the medium.
  • the tunnel tron enables the investigation of organic and inorganic compounds in vapors, liquids and solids with regard to their chemical composition and geometrical and energetic structure as well as interaction processes; All of this is possible as a function of various external parameters and in the time-resolved regime.
  • spectroscopic measurements are of interest, e.g.
  • the tunnel tron as a coherent and tunable radiation source has properties of the wave field that e.g. come into play in interferometry and holography.
  • holography is a method for producing a unique photographic image of a coherently exposed object, in which an undisturbed (direct) beam and the reflected beam originating from the object are brought into interference in a detection system. The reconstruction of this interference image provides a three-dimensional image of the object.
  • Communication and data transmission is a further area of application of the component proposed here, a frequency band being accessible which is far above that which has been managed up to now by the ITU (Intern. Telecom. Union).
  • the new frequency range enables a significant increase in the number of usable channels for both satellite and ground-based communication.
  • the frequency range up to 5 THz provides about 250,000 channels. This can be compared with for example 40 channels for satellite communication in the frequency band of 11.7. - 12.5 GHz, which was provided by the ITU for Region 1, Africa, Europe and the former Soviet Union together.
  • Assuming a 4 kHz channel width for voice communication you would generate 2 billion voice channels on such Carrier could be transported.
  • PCM - pulse code modulation since frequency modulation would drive the noise power far beyond the level of 3 pW / km (about 52 dB), which was recommended by the CCIR as the upper noise limit.
  • Digital systems allow signals to be regenerated in intermediate stations, thereby avoiding the accumulation of errors.
  • MIMR Imaging multifrequency microwave radiometer
  • Imaging close-up imaging is important for the safety and maneuverability of helicopters and the approach of aircraft.
  • the basic requirement here is always a powerful, tunable, possibly monochromatic and coherent submillimeter-wave emitter (and corresponding detector), as is provided with the component of the present invention.
  • As an 'on-chip' integrated or separate emitter and detector component it is suitable for radar measurements in the most general sense, ie for location, navigation and early detection systems.
  • the tunnel tron can be an active sensor for SAR (synthetic aperture radar) application.
  • a SAR system sends microwave radiation to the object (the earth when research satellites are the starting point) and receives the returning radiation.
  • the fine tuning of the emitter allows the frequency to be positioned within the absorption band-min-ma of the atmosphere.
  • the possibility of electronically changing the direction of the 'vellum field of the tunnel tron proves to be a further advantage for scanning the observation area

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

L'invention concerne un composant électronique supraconducteur présentant les propriétés spécifiques d'un émetteur et/ou d'un détecteur pour le rayonnement électromagnétique d'ondes de l'ordre du sous-millimètre. Ce composant comprend un réseau planaire de microponts (entretoises) formés dans une fine couche d'un supraconducteur haute température. Ce dernier est obtenu par croissance épitaxiale sur le substrat avec les plans en CuO2, soit perpendiculairement, soit par inclinaison à un angle THETA (1 DEG < THETA <89 DEG ) par rapport à la surface du substrat. Chaque micropont contient ainsi une suite de piles de contacts de Josephson (intrinsèques) empilés. L'invention concerne également des connexions supraconductrices (à disposition sérielle ou parallèle) entre des microponts individuels, ce qui permet d'optimiser des paramètres de circuit, tels que par ex. l'adaptation de l'impédance à l'espace de rayonnement et la maximalisation de la puissance émise. Des éléments électroniques permettent d'agir sur la fréquence et l'intensité du champ de rayonnement (par ex. de moduler). Ce composant permet par exemple de couvrir en continu la plage de fréquence entre l'infrarouge lointain et le domaine de micro-ondes. Cette invention concerne également quelques applications du composant proposé, couvrant aussi bien l'émission que la détection de rayonnements électromagnétiques.
EP97935470A 1996-07-23 1997-07-23 Composant emetteur et/ou detecteur pour rayonnement d'ondes de l'ordre du sous-millimetre et procede permettant de le produire Withdrawn EP0931349A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19629583A DE19629583C2 (de) 1996-07-23 1996-07-23 Emitter- und/oder Detektorbauelement für Submillimeterwellen-Strahlung mit einer Vielzahl von Josephson-Kontakten, Verfahren zu seiner Herstellung und Verwendungen des Bauelements
DE19629583 1996-07-23
PCT/DE1997/001558 WO1998004002A1 (fr) 1996-07-23 1997-07-23 Composant emetteur et/ou detecteur pour rayonnement d'ondes de l'ordre du sous-millimetre et procede permettant de le produire

Publications (1)

Publication Number Publication Date
EP0931349A1 true EP0931349A1 (fr) 1999-07-28

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EP97935470A Withdrawn EP0931349A1 (fr) 1996-07-23 1997-07-23 Composant emetteur et/ou detecteur pour rayonnement d'ondes de l'ordre du sous-millimetre et procede permettant de le produire

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Country Link
EP (1) EP0931349A1 (fr)
JP (1) JP2000515322A (fr)
DE (1) DE19629583C2 (fr)
WO (1) WO1998004002A1 (fr)

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JP2000353836A (ja) * 1999-06-10 2000-12-19 Japan Science & Technology Corp 超伝導コヒーレント電磁波発振装置及びその製造方法
AU1128701A (en) 1999-10-04 2001-05-10 Christoph Haussler Device for high resolution measurement of magnetic fields
JP2004500582A (ja) * 2000-04-06 2004-01-08 レンセレイアー　ポリテクニック　インスティテュート テラヘルツトランシーバーならびにこのようなトランシーバーを用いるテラヘルツパルスの放出および検出のための方法
GB0110468D0 (en) * 2001-04-28 2001-06-20 Secr Defence MM-Wave Terrestrial Imager
CN110325084B (zh) 2017-04-18 2022-04-22 易希提卫生与保健公司 用于分配片材产品的分配器
CN108493541A (zh) * 2018-02-02 2018-09-04 综艺超导科技有限公司 一种紧凑型耐高功率高温超导滤波器

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JPH031584A (ja) * 1989-02-04 1991-01-08 Riken Corp ジョセフソン接合素子の製造方法
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CA2037795C (fr) * 1990-03-09 1998-10-06 Saburo Tanaka Procede de fabrication a haute temperature de pellicules minces supraconductrices
US5114912A (en) * 1991-05-13 1992-05-19 The United States Of America As Represented By The Secretary Of Commerce Two-dimensional, Josephson-array, voltage-tunable, high-frequency oscillator
EP0513557B1 (fr) * 1991-05-17 1998-08-05 Hehrwart Schröder Dispositif supraconducteur à effet tunnel
EP0627989A1 (fr) * 1991-06-11 1994-12-14 Superconductor Technologies Inc. Films supraconducteurs haute temperature a axe a presentant un alignement preferentiel dans le plan
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DE4137953C2 (de) * 1991-11-18 1994-12-22 Siemens Ag Mikrowellenschaltkreis einer Josephson-Einrichtung und Verwendung des Schaltkreises
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JP2740460B2 (ja) * 1994-12-07 1998-04-15 株式会社日立製作所 超電導回路

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Also Published As

Publication number Publication date
DE19629583A1 (de) 1998-01-29
WO1998004002A1 (fr) 1998-01-29
DE19629583C2 (de) 2001-04-19
JP2000515322A (ja) 2000-11-14

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