EP0925520A1 - Systeme pour interconnecter des guides d'ondes - Google Patents

Systeme pour interconnecter des guides d'ondes

Info

Publication number
EP0925520A1
EP0925520A1 EP97909128A EP97909128A EP0925520A1 EP 0925520 A1 EP0925520 A1 EP 0925520A1 EP 97909128 A EP97909128 A EP 97909128A EP 97909128 A EP97909128 A EP 97909128A EP 0925520 A1 EP0925520 A1 EP 0925520A1
Authority
EP
European Patent Office
Prior art keywords
waveguide
core layer
optical
arrangement according
rib
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97909128A
Other languages
German (de)
English (en)
Inventor
Robert Schimpe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0925520A1 publication Critical patent/EP0925520A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/125—Bends, branchings or intersections
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12147—Coupler

Definitions

  • the invention relates to an arrangement for coupling together at least two waveguides according to the preamble of patent claim 1.
  • Arrangements for coupling optical waveguides to one another have a variety of applications in the implementation of components and for providing connections between optical components in the integrated optics.
  • Component properties are particularly large, since optimization is only possible to a limited extent, e.g. through the use of mechanically clamped quantum wells and barriers or partial rearrangement (disordering) of quantum wells.
  • the object of the invention specified in claim 1 is to provide an arrangement for coupling optical waveguides to one another which is compatible with planar waveguides, in particular ribbed waveguides.
  • the arrangement according to the invention connects vertically superimposed waveguides.
  • the waveguides each have at least one core layer. At least one of the waveguides is designed as a ridge or rib waveguide.
  • the waveguides are spatially separated by a cladding layer with a lower refractive index than the core layers.
  • the cladding layer effects an optical coupling of the two waveguides, so that the performance of the basic optical mode of the coupling structure in both
  • Waveguides is guided. If at least part of the core layer or a cladding layer of a waveguide is removed or added, the optical power is forced into one of the two waveguides. If the construction of the coupling arrangement along the axis of the wave propagation is changed sufficiently weakly, the spatial shift of the optical power in the coupler takes place adiabatically, i.e. without losses due to optical radiation.
  • the arrangement according to the invention advantageously produces a transition from phase mismatch to phase match between the two waveguides.
  • the cross-sectional taper within the overlap region of the two waveguides causes the transition from phase mismatch to phase adaptation between the two waveguides.
  • phase matching in particular the phase velocities of the optical waves each guided in the two waveguides are the same.
  • the arrangement according to the invention can be used on all substrates, for example substrates made of SiO 2 , Si 3 N 4 , Al 2 O 3 , SiGe, with suitability for optical components.
  • substrates made of SiO 2 , Si 3 N 4 , Al 2 O 3 , SiGe
  • laser-active material such as GaN, GaAs, InP or more complex mixed crystals
  • PLC planar lightwave circuit
  • FTTL fiber-to-the-loop
  • the invention advantageously also provides an arrangement for coupling at least two optical components, each of which has a core layer belonging to an optical waveguide for guiding an optical wave of a certain wavelength, which has the features specified in the characterizing part of claim 11.
  • This arrangement is particularly advantageously suitable for the optical connection of optical components with a ribbed waveguide structure. Certain laser diodes in particular have such a structure.
  • Preferred and advantageous embodiments of the arrangement according to claim 11 emerge from claims 12 to 17.
  • Overlap area not essential. Also, phase matching in an overlap area is not essential, so that the overlapping core layers can be the core layers of single-mode waveguides.
  • An arrangement according to one of claims 11 to 17 greatly simplifies the integration of the components. Since the optical field can be expanded to a greater extent in the waveguide 4 containing the further core layer, the coupling of the arrangement to glass fiber waveguides is advantageously facilitated.
  • FIG. 1 shows a cross section perpendicular to the axis of the wave propagation through the overlap area of a first exemplary embodiment of the arrangement according to the invention
  • FIG. 2 shows a plan view of the first exemplary embodiment, the cross section according to FIG. 1 being taken along the section line III-III in this FIG. 2,
  • Figure 3 shows a longitudinal section through the first
  • FIGS. 4a-4f cross sections through the exemplary embodiment according to FIGS. 1 to 3 along the section lines I-I to V-V and IIV-IIV in FIG. 2,
  • FIG. 5 shows a top view of a high-power laser diode in which an arrangement according to the invention is used
  • FIG. 6 shows a longitudinal section through the laser diode according to FIG. 5 along the axis of the wave propagation
  • FIG. 7 shows a plan view of a DBR laser diode in which an arrangement according to the invention is used
  • FIG. 8 shows a longitudinal section through the DBR laser diode according to FIG. 7 along the axis of the wave propagation
  • Figure 9 is a plan view of a DFB laser diode to which an optical modulator according to the invention
  • Figure 10 shows a longitudinal section through the DFB laser diode
  • FIG. 11 shows a plan view of a bidirectional module with laser diode and photodiodes, in which an arrangement according to the invention is used,
  • Figure 12 is a cross section perpendicular to the axis of wave propagation through the
  • Figure 13 is a cross section perpendicular to the axis of wave propagation through the
  • FIG. 14 shows a cross section perpendicular to the axis of wave propagation through the overlap region of an embodiment of the arrangement according to the invention similar to the first exemplary embodiment, in which the other waveguide is formed in the rib of the rib waveguide, and
  • FIG. 15 shows an arrangement similar to the arrangement according to FIGS. 1 to 3 and shown in the same representation as in FIG. 2, in which an optical waveguide forms a waveguide fork with at least two waveguide branches, one component being arranged in each waveguide branch.
  • Exemplary embodiments are the arrangement according to the invention, generally designated 1, for coupling together at least two waveguides, if necessary. integrated on the surface 20 of a substrate 2 together with other devices such as laser diodes, modulators, photodiodes etc.
  • the two waveguides of the arrangement 1 are designated 3 and 4 and each have a core layer for guiding an optical wave, the core layer of the waveguide 3 being designated 30 and the core layer of the waveguide 4 being designated 40.
  • the core layers 30 and 40 are arranged parallel to the surface 20 of the substrate 2, the core layer 30 of the waveguide 3 being arranged at a greater vertical distance from the surface 20 than the core layer 40 of the waveguide 4. As a result, the core layers 30 and 40 are arranged at a vertical distance d34 from one another to these layers 30 and 40.
  • the distance d34 between the two core layers 30 and 40 is to be chosen so large that an optical wave guided in one of the waveguides 3 or 4 does not substantially overlap in the other waveguides 4 or 3 when entering the overlap region 6 mentioned below.
  • the distance d34 should be at least equal to half the wavelength ⁇ of an optical wave carried in a core layer 30 and / or 40.
  • the two core layers 30 and 40 overlap one another in an overlap region 6 and are separated from one another in the overlap region 6 by a cladding layer 7 with a lower refractive index relative to the core layers 30 and 40, through which one in the core layer of a waveguide, for example the core layer 30 of the waveguide 3 guided optical wave can be coupled into the core layer 40 of the other waveguide 4.
  • At least one of the two waveguides 3 and / or 4 is a rib waveguide, in which a rib 8 is formed on at least one flat side of its core layer 30 and / or 40, which runs along a core layer 30 and / or 40 and thus runs along the longitudinal axis 80 parallel to the surface 20 of the substrate 2.
  • the longitudinal axis 80 defines the direction of an axis 31 and / or 41 of the propagation of an optical wave guided in the core layer 30 and / or 40 of the rib waveguide 3 and / or 4.
  • Rib waveguide can be in a certain direction r of the longitudinal axis 80 and thus the axis 81 of the wave propagation a cross-sectional taper 9, which advantageously causes a transition from phase mismatch to phase matching between the two waveguides 3 and 4 takes place within the overlap region 6.
  • phase mismatch in particular the phase velocities of the waves running in the two waveguides 3 and 4 are of equal size, as a result of which the coupling of optical power between the
  • Waveguides 3 and 4 is advantageously particularly efficient.
  • the section line III-III perpendicular to the axis 31 or 41 of the wave propagation of the cross section shown in FIG. 1 through the overlap region 6 lies in the area where the optical wave or the optical field in the waveguide 3 and waveguide 4 is performed.
  • waveguide 3 consists of the cladding layers 32 and 7 and the core layer 30 arranged between these cladding layers 32 and 7 and is designed as a ribbed or ridge waveguide.
  • His rib 8 is on the of the flat side 301 of the core layer 30 facing away from the surface 20 of the substrate 2 and protrudes upward from the cladding layer 32 covering the core layer 30 on this flat side 301, which like the cladding layer 7 has a lower refractive index than the core layer 30.
  • the waveguide 4 consists of the cladding layers 7 and 42 and the core layer 40 arranged between these cladding layers 7 and 42, that is to say it has the cladding layer 7 in common with the waveguide 3, and is buried as one
  • Ribbed waveguide formed. Its rib 8 is formed on the flat side 401 of the core layer 40 facing away from the surface 20 of the substrate 2 as part of this core layer 40 and projects upwards into the cladding layer 7.
  • the cladding layer 42 which like the cladding layer 7 separating the core layers 30 and 40 from one another a lower refractive index than this core layer 40 is applied, for example, to the surface 20 of the substrate 2.
  • the core layer 30 contains the
  • Waveguide 3 at least one mixed crystal made of InGaAsP, the average refractive index of core layer 30 at a wavelength ⁇ of 1.55 ⁇ m being 3.46 and core layer 3 having a thickness d3 of 0.175 ⁇ m, for example.
  • the core layer 40 of the waveguide 4 has a thickness d4 of 0.1 ⁇ m outside the rib 8 and 0.125 ⁇ m in the region of the rib 8, contains a mixed crystal made of InGaAsP with a band edge wavelength of 1.46 ⁇ m and has an average optical refractive index the wavelength ⁇ of 1.55 ⁇ m from 3.46.
  • the cladding layer 32 of the waveguide 3 consists of p-doped InP with a thickness d32 of 75 n outside of the
  • the two Waveguides 3 and 4 common cladding layer 7 consists of n-doped InP and has a thickness d34 of 1.3 ⁇ m and the cladding layer 42 of the waveguide 4 consists of n-doped InP.
  • the rib 8 of the waveguide 3 has a cover layer 81 made of the p-doped ternary mixed crystal InGaAs and is not required for the function of the coupling device, but should, for example, enable the injection of optical carriers for laser operation. In this case, the
  • Core layer 30 of the waveguide 3 contain a multi-quantum well layer (MQW layer).
  • MQW layer multi-quantum well layer
  • the exemplary coupling device 1 according to FIG. 1 is designed for an operating wavelength of 1.55 ⁇ m. Since the
  • Waveguide 3 is a ridge waveguide, it can be designed like an MCRW laser diode, i.e. have a double heterostructure with p or n-doped cladding layers, have a strained MQW layer as core layer 30, have a distributed feedback grating (DFB grating) 82 indicated by grating lines 820 in FIG. 2, and with dielectric cover layers and contacts Electricity injection.
  • a further waveguide 4 is integrated by inserting the other core layer 4.
  • the DFB grating 82 is not required for the function of the arrangement 1, but should, if necessary, the frequency selection e.g. enable in a laser diode.
  • the section lines II to VII-VII in FIG. 3 identify different areas, essentially only the areas lying between the section lines II-II, III-III and IV-IV are required for the coupling from the waveguide 3 into the waveguide 4.
  • the area between the cutting lines II and II-II is the undisturbed rib waveguide 3, ie there is no further waveguide under the waveguide 3 in this area.
  • the areas between the cutting lines VV, VI-VI and VII-VII are at the end of the coupling device if the rib 8 of the waveguide 3 is removed when the core layer 40 is exposed or when only the lower buried rib waveguide 4 is present.
  • the optical field is transferred from the waveguide 3 into the waveguide 4 in the direction r.
  • the undisturbed waveguide 4 in the area between II and II-II and the undisturbed waveguide 4 in the area to the right of VII-VII a certain Difference in the optical effective refractive indices must have, ie in the coupling zone in the area between III-III and IV-IV in the overlap area 6 there must be an asymmetrical optical coupler.
  • a coupling device 1 suitable for a laser diode with a rib waveguide requires a difference between the effective refractive indices or refractive indices of the undisturbed waveguides 3, 4 of approximately 0.01 or greater. Adhering to certain values for the effective refractive index is a common requirement for the manufacturer of DFB lasers, since a bandwidth for the effective refractive index of ⁇ 0.001 is required to keep the emission wavelength in the range of ⁇ 1.6 nm (distance between two wavelength division multiplex channels).
  • optical connections are arranged in a common plane below the components, which can therefore be called the optical rear wall in analogy to the speech control in device construction.
  • the bidirectional module shown in FIG. 11 consists of a laser diode 110 for, for example, 1.5 ⁇ m wavelength, a grating coupler 120 for 1.5 ⁇ m wavelength and photodiodes 130.
  • the grating coupler 120 is coupled to the laser diode 110 by an arrangement according to the invention, which is not shown in detail in the lower waveguide 4 this
  • the arrangement 1 shown in cross section in FIG. 12 is designed for polarization-independent function overlap region 6, strictly speaking in the region where the optical field is guided in the upper waveguide 3 and lower waveguide 4.
  • the upper waveguide 3 is a

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

L'invention concerne un système dans lequel les couches centrales (30, 40) de deux guides d'ondes optiques (3, 4) sont disposées de manière parallèle à distance (d34) l'une de l'autre et se chevauchent dans une zone de chevauchement (6). Dans cette zone, au moins un des guides d'ondes présente un rétrécissement (9) de sa section transversale. Il en résulte que dans la zone de chevauchement, une onde guidée dans un guide d'ondes passe entièrement dans l'autre guide d'ondes.
EP97909128A 1996-09-13 1997-09-11 Systeme pour interconnecter des guides d'ondes Withdrawn EP0925520A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19637396A DE19637396A1 (de) 1996-09-13 1996-09-13 Koppelanordnung zum Aneinanderkoppeln von Wellenleitern
DE19637396 1996-09-13
PCT/DE1997/002031 WO1998011461A1 (fr) 1996-09-13 1997-09-11 Systeme pour interconnecter des guides d'ondes

Publications (1)

Publication Number Publication Date
EP0925520A1 true EP0925520A1 (fr) 1999-06-30

Family

ID=7805582

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97909128A Withdrawn EP0925520A1 (fr) 1996-09-13 1997-09-11 Systeme pour interconnecter des guides d'ondes

Country Status (5)

Country Link
US (1) US6282345B1 (fr)
EP (1) EP0925520A1 (fr)
JP (1) JP2001500280A (fr)
DE (1) DE19637396A1 (fr)
WO (1) WO1998011461A1 (fr)

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GB0122425D0 (en) * 2001-09-17 2001-11-07 Univ Nanyang An optical coupling mount
CN1685256B (zh) * 2001-10-30 2012-07-04 Hoya美国公司 使用光学功率横向传送的光学接合设备和方法
KR100475412B1 (ko) * 2002-03-11 2005-03-10 주식회사 럭스퍼트 상부 펌핑방식의 광소자
US7116691B2 (en) * 2003-01-30 2006-10-03 Toyoda Gosei Co., Ltd. Edge-emitting type semiconductor laser
US7480214B2 (en) 2003-12-08 2009-01-20 Seagate Technology Llc Efficient waveguide coupler for data recording transducer
US7469084B2 (en) * 2004-05-18 2008-12-23 Valtion Teknillinen Tutkimuskeskus Structure comprising an adiabatic coupler for adiabatic coupling of light between two optical waveguides and method for manufacturing such a structure
US7649916B2 (en) * 2004-06-30 2010-01-19 Finisar Corporation Semiconductor laser with side mode suppression
KR100759805B1 (ko) * 2005-12-07 2007-09-20 한국전자통신연구원 광증폭 듀플렉서
US7551826B2 (en) * 2007-06-26 2009-06-23 The University Of Connecticut Integrated circuit employing low loss spot-size converter
JP5764776B2 (ja) * 2010-10-08 2015-08-19 国立研究開発法人産業技術総合研究所 光学変換素子
US9040919B2 (en) * 2010-10-25 2015-05-26 Thomas E. Darcie Photomixer-waveguide coupling tapers
US8755653B2 (en) * 2011-02-22 2014-06-17 Ofs Fitel, Llc Fiber-based photonic microdevices with sub-wavelength scale variations in fiber radius
US9036968B2 (en) 2011-07-13 2015-05-19 Innolume Gmbh Adiabatic mode-profile conversion by selective oxidation for photonic integrated circuit
GB2492996B (en) * 2011-07-19 2018-01-10 Huawei Tech Co Ltd Coupled waveguide apparatus and structures therefor
US9091819B2 (en) 2013-04-11 2015-07-28 International Business Machines Corporation Grating edge coupler and method of forming same
WO2015129039A1 (fr) * 2014-02-26 2015-09-03 独立行政法人産業技術総合研究所 Dispositif optique à semi-conducteurs
EP3091379B1 (fr) 2015-05-05 2020-12-02 Huawei Technologies Co., Ltd. Schéma de couplage optique
EP3145037B1 (fr) 2015-09-21 2021-04-07 Huawei Technologies Co., Ltd. Appareil optique à semi-conducteur
JP7306125B2 (ja) * 2019-07-18 2023-07-11 住友電気工業株式会社 スポットサイズ変換器およびその製造方法
US11480734B2 (en) * 2019-09-25 2022-10-25 Nexus Photonics, Inc Active-passive photonic integrated circuit platform

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Also Published As

Publication number Publication date
WO1998011461A1 (fr) 1998-03-19
US6282345B1 (en) 2001-08-28
JP2001500280A (ja) 2001-01-09
DE19637396A1 (de) 1998-03-19

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