DE69101693T2 - Halbleiter-Wellenlängenwandler. - Google Patents

Halbleiter-Wellenlängenwandler.

Info

Publication number
DE69101693T2
DE69101693T2 DE69101693T DE69101693T DE69101693T2 DE 69101693 T2 DE69101693 T2 DE 69101693T2 DE 69101693 T DE69101693 T DE 69101693T DE 69101693 T DE69101693 T DE 69101693T DE 69101693 T2 DE69101693 T2 DE 69101693T2
Authority
DE
Germany
Prior art keywords
wavelength converter
semiconductor wavelength
semiconductor
converter
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69101693T
Other languages
English (en)
Other versions
DE69101693D1 (de
Inventor
Masahiro Ikeda
Osamu Mikami
Hiroshi Yasaka
Mitsuru Naganuma
Shingo Uehara
Katsuhiko Kurumada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of DE69101693D1 publication Critical patent/DE69101693D1/de
Publication of DE69101693T2 publication Critical patent/DE69101693T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00—Optical logic elements; Optical bistable devices
    • G02F3/02—Optical bistable devices
    • G02F3/026—Optical bistable devices based on laser effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H01S5/0609—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch acting on an absorbing region, e.g. wavelength convertors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
DE69101693T 1990-11-07 1991-11-06 Halbleiter-Wellenlängenwandler. Expired - Fee Related DE69101693T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29987590 1990-11-07

Publications (2)

Publication Number Publication Date
DE69101693D1 DE69101693D1 (de) 1994-05-19
DE69101693T2 true DE69101693T2 (de) 1994-08-11

Family

ID=17878015

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69101693T Expired - Fee Related DE69101693T2 (de) 1990-11-07 1991-11-06 Halbleiter-Wellenlängenwandler.

Country Status (3)

Country Link
US (1) US5155737A (de)
EP (1) EP0484923B1 (de)
DE (1) DE69101693T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
EP0585758B1 (de) * 1992-08-26 1998-10-14 Sony Corporation Optischer Wellenlängenkonverter
US5469459A (en) * 1993-01-08 1995-11-21 Nec Corporation Laser diode element with excellent intermodulation distortion characteristic
JP3210159B2 (ja) * 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
JP3263553B2 (ja) * 1994-02-23 2002-03-04 キヤノン株式会社 光送信機
JPH07307530A (ja) * 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ
US5754714A (en) * 1994-09-17 1998-05-19 Kabushiki Kaisha Toshiba Semiconductor optical waveguide device, optical control type optical switch, and wavelength conversion device
JPH09311220A (ja) * 1996-03-19 1997-12-02 Canon Inc 異なる偏光依存性を持つ領域が交互に配置された回折格子、及びそれを用いた光半導体デバイス
JP2937148B2 (ja) * 1996-11-06 1999-08-23 日本電気株式会社 半導体集積型偏波モード変換器
US5784399A (en) * 1996-12-19 1998-07-21 Xerox Corporation Polarization mode selection by distributed Bragg reflector in a quantum well laser
JP3682367B2 (ja) * 1998-01-28 2005-08-10 パイオニア株式会社 分布帰還型半導体レーザ
JP3349945B2 (ja) * 1998-03-13 2002-11-25 日本電気株式会社 信号変換装置及び信号変換装置を用いた光伝送方式
US6816518B2 (en) * 2001-03-20 2004-11-09 Cyoptics (Israel) Ltd. Wavelength tunable high repetition rate optical pulse generator
JP3682417B2 (ja) * 2001-05-01 2005-08-10 古河電気工業株式会社 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器
US6628686B1 (en) * 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
GB0206226D0 (en) * 2002-03-16 2002-05-01 Intense Photonics Ltd Electro-absorption modulator with broad optical bandwidth
EP1813975B1 (de) * 2003-03-31 2010-08-25 Nippon Telegraph And Telephone Corporation Optische Halbleitervorrichtung und integrierte optische Halbleiterschaltung
FR2973594B1 (fr) * 2011-03-31 2013-03-29 Thales Sa Systeme d'emission de signal optique
DE102012109175B4 (de) 2012-09-27 2019-02-28 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4888783A (en) * 1987-03-20 1989-12-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor laser device
JPH0656908B2 (ja) * 1987-03-31 1994-07-27 日本電信電話株式会社 波長変換素子
US4910738A (en) * 1987-11-27 1990-03-20 Matsushita Electric Industrial Co., Ltd. Short optical pulse generators using mode-locked semiconductor lasers oscillating in transverse magnetic modes
JPH02152289A (ja) * 1988-12-02 1990-06-12 Sumitomo Electric Ind Ltd 光増幅装置
US5040183A (en) * 1990-07-20 1991-08-13 At&T Bell Laboratories Apparatus comprising optical pulse-generating means

Also Published As

Publication number Publication date
EP0484923A3 (en) 1992-06-03
EP0484923B1 (de) 1994-04-13
EP0484923A2 (de) 1992-05-13
DE69101693D1 (de) 1994-05-19
US5155737A (en) 1992-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee