DE69809377T2 - Halbleiterlaser mit verteilter Rückkoppelung und unterschiedlichen Lichtintensitätsverteilungen der verschiedenen Polarisationsmoden, sowie zugehöriges Ansteuerverfahren - Google Patents
Halbleiterlaser mit verteilter Rückkoppelung und unterschiedlichen Lichtintensitätsverteilungen der verschiedenen Polarisationsmoden, sowie zugehöriges AnsteuerverfahrenInfo
- Publication number
- DE69809377T2 DE69809377T2 DE69809377T DE69809377T DE69809377T2 DE 69809377 T2 DE69809377 T2 DE 69809377T2 DE 69809377 T DE69809377 T DE 69809377T DE 69809377 T DE69809377 T DE 69809377T DE 69809377 T2 DE69809377 T2 DE 69809377T2
- Authority
- DE
- Germany
- Prior art keywords
- well
- control method
- light intensity
- semiconductor laser
- associated control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34850897 | 1997-12-03 | ||
JP34850997 | 1997-12-03 | ||
JP10346621A JPH11243256A (ja) | 1997-12-03 | 1998-11-19 | 分布帰還形半導体レーザとその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69809377D1 DE69809377D1 (de) | 2002-12-19 |
DE69809377T2 true DE69809377T2 (de) | 2003-04-24 |
Family
ID=27341222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69809377T Expired - Fee Related DE69809377T2 (de) | 1997-12-03 | 1998-12-02 | Halbleiterlaser mit verteilter Rückkoppelung und unterschiedlichen Lichtintensitätsverteilungen der verschiedenen Polarisationsmoden, sowie zugehöriges Ansteuerverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US6252895B1 (de) |
EP (1) | EP0921615B1 (de) |
JP (1) | JPH11243256A (de) |
DE (1) | DE69809377T2 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2799314B1 (fr) * | 1999-10-01 | 2002-10-25 | Thomson Csf | Laser a generations parametriques |
JP2001168455A (ja) * | 1999-12-06 | 2001-06-22 | Fujitsu Ltd | 光半導体装置の製造方法 |
JP2001281473A (ja) * | 2000-03-28 | 2001-10-10 | Toshiba Corp | フォトニクス結晶及びその製造方法、光モジュール並びに光システム |
US7009210B2 (en) * | 2000-10-06 | 2006-03-07 | Alphion Corporation | Method and apparatus for bit-rate and format insensitive performance monitoring of lightwave signals |
GB2369492A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | (Ga,In)(N,As) Laser structures using distributed feedback |
JP3673471B2 (ja) | 2000-12-28 | 2005-07-20 | シャープ株式会社 | テキスト音声合成装置およびプログラム記録媒体 |
US6912237B2 (en) * | 2001-02-06 | 2005-06-28 | The Furukawa Electric Co., Ltd. | Semiconductor laser module and semiconductor laser device having light feedback function |
JP2002319738A (ja) * | 2001-04-19 | 2002-10-31 | Furukawa Electric Co Ltd:The | 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器 |
JP3682417B2 (ja) * | 2001-05-01 | 2005-08-10 | 古河電気工業株式会社 | 半導体レーザ装置、半導体レーザモジュールおよびこれを用いたラマン増幅器 |
US6643308B2 (en) * | 2001-07-06 | 2003-11-04 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and method for suppressing injection current |
US6714574B2 (en) * | 2001-07-31 | 2004-03-30 | Bookham Technology, Plc | Monolithically integrated optically-pumped edge-emitting semiconductor laser |
US9372306B1 (en) | 2001-10-09 | 2016-06-21 | Infinera Corporation | Method of achieving acceptable performance in and fabrication of a monolithic photonic integrated circuit (PIC) with integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
KR100429531B1 (ko) * | 2001-10-12 | 2004-05-03 | 삼성전자주식회사 | 분포귀환형 반도체 레이저 |
JP4097950B2 (ja) * | 2002-02-12 | 2008-06-11 | 三菱電機株式会社 | 分布帰還型レーザ装置、半導体光装置および分布帰還型レーザ装置の製造方法 |
JP4157736B2 (ja) * | 2002-08-09 | 2008-10-01 | 株式会社日立製作所 | 光送信装置 |
US10012797B1 (en) | 2002-10-08 | 2018-07-03 | Infinera Corporation | Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL) |
JP4359035B2 (ja) | 2002-11-21 | 2009-11-04 | 富士通株式会社 | 光中継器 |
JP2004214911A (ja) * | 2002-12-27 | 2004-07-29 | Sanyo Electric Co Ltd | Agc回路 |
KR100584412B1 (ko) * | 2003-10-10 | 2006-05-26 | 삼성전자주식회사 | 이득 고정된 반도체 광증폭기 |
KR100794653B1 (ko) * | 2005-12-06 | 2008-01-14 | 한국전자통신연구원 | 분포궤환형 양자점 반도체 레이저 구조물 |
US7868542B2 (en) * | 2007-02-09 | 2011-01-11 | Canon Kabushiki Kaisha | Light-emitting apparatus having periodic structure and sandwiched optical waveguide |
GB2465754B (en) * | 2008-11-26 | 2011-02-09 | Univ Dublin City | A semiconductor optical amplifier with a reduced noise figure |
JP6155770B2 (ja) | 2013-03-29 | 2017-07-05 | 富士通株式会社 | 光素子及び光モジュール |
JP2023552102A (ja) * | 2020-12-03 | 2023-12-14 | エイエムエス-オスラム インターナショナル ゲーエムベーハー | 放射線放出レーザダイオード、放射線放出レーザダイオードの導波路層列の屈折率を選択する方法、及び放射線放出レーザダイオードを製造する方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4918701A (en) | 1988-09-27 | 1990-04-17 | Siemens Aktiengesellschaft | Semiconductor laser arrangement and method for the operation thereof |
JPH02159781A (ja) | 1988-12-14 | 1990-06-19 | Toshiba Corp | 光通信装置 |
US5202782A (en) | 1990-01-19 | 1993-04-13 | Canon Kabushiki Kaisha | Optical communication method and optical communication system |
JP2986604B2 (ja) | 1992-01-13 | 1999-12-06 | キヤノン株式会社 | 半導体光フィルタ、その選択波長の制御方法及びそれを用いた光通信システム |
DE69315872T2 (de) | 1992-03-23 | 1998-05-20 | Canon Kk | Optische Vorrichtung und Methode unter Benutzung dieser Vorrichtung, welche die Änderung einer über die beiden Anschlussenden eines verstärkenden Bereichs abfallenden Spannung ausnutzt |
JP3210159B2 (ja) | 1993-12-10 | 2001-09-17 | キヤノン株式会社 | 半導体レーザ、光源装置、光通信システム及び光通信方法 |
JP3226073B2 (ja) | 1994-02-18 | 2001-11-05 | キヤノン株式会社 | 偏波変調可能な半導体レーザおよびその使用法 |
EP0668641B1 (de) * | 1994-02-18 | 2001-06-06 | Canon Kabushiki Kaisha | Polarisationsselektiver Halbleiterlaser, Lichtsender und optisches Kommunikationssystem unter Verwendung dieses Lasers |
JP3263553B2 (ja) | 1994-02-23 | 2002-03-04 | キヤノン株式会社 | 光送信機 |
JP3303515B2 (ja) | 1994-03-18 | 2002-07-22 | キヤノン株式会社 | 光通信方式及びそれを用いた光通信システム |
US5659560A (en) * | 1994-05-12 | 1997-08-19 | Canon Kabushiki Kaisha | Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same |
DE69609547T2 (de) * | 1995-03-31 | 2001-04-19 | Canon Kk | Optischer Halbleitervorrichtung, Antriebsverfahren und optisches Kommunikationssystem |
JPH0969671A (ja) * | 1995-08-30 | 1997-03-11 | Canon Inc | 偏波変調可能な分布帰還型半導体レーザ |
JPH09191157A (ja) * | 1996-01-11 | 1997-07-22 | Canon Inc | 偏波変調半導体レーザとその作製方法 |
US5946336A (en) * | 1996-01-11 | 1999-08-31 | Canon Kabushiki Kaisha | Optical semiconductor apparatus, fabrication method thereof, modulation method therefor, light source apparatus and optical communication system or method using the same |
JPH09191159A (ja) * | 1996-01-11 | 1997-07-22 | Canon Inc | 偏波変調半導体レーザとその作製方法 |
JP3387720B2 (ja) * | 1996-01-11 | 2003-03-17 | キヤノン株式会社 | 偏波変調半導体レーザとその作製方法 |
JPH09311220A (ja) * | 1996-03-19 | 1997-12-02 | Canon Inc | 異なる偏光依存性を持つ領域が交互に配置された回折格子、及びそれを用いた光半導体デバイス |
-
1998
- 1998-11-19 JP JP10346621A patent/JPH11243256A/ja not_active Withdrawn
- 1998-12-02 DE DE69809377T patent/DE69809377T2/de not_active Expired - Fee Related
- 1998-12-02 US US09/203,602 patent/US6252895B1/en not_active Expired - Fee Related
- 1998-12-02 EP EP98122892A patent/EP0921615B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0921615A1 (de) | 1999-06-09 |
US6252895B1 (en) | 2001-06-26 |
JPH11243256A (ja) | 1999-09-07 |
DE69809377D1 (de) | 2002-12-19 |
EP0921615B1 (de) | 2002-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |