DE69607493T2 - Polarisationsmodenselektiver Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem unter Verwendung dieses Lasers - Google Patents

Polarisationsmodenselektiver Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem unter Verwendung dieses Lasers

Info

Publication number
DE69607493T2
DE69607493T2 DE69607493T DE69607493T DE69607493T2 DE 69607493 T2 DE69607493 T2 DE 69607493T2 DE 69607493 T DE69607493 T DE 69607493T DE 69607493 T DE69607493 T DE 69607493T DE 69607493 T2 DE69607493 T2 DE 69607493T2
Authority
DE
Germany
Prior art keywords
laser
communication system
optical communication
modulation method
polarization mode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69607493T
Other languages
English (en)
Other versions
DE69607493D1 (de
Inventor
Hajime Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP01554295A external-priority patent/JP3287443B2/ja
Priority claimed from JP01554095A external-priority patent/JP3246703B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69607493D1 publication Critical patent/DE69607493D1/de
Application granted granted Critical
Publication of DE69607493T2 publication Critical patent/DE69607493T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
DE69607493T 1995-01-04 1996-01-03 Polarisationsmodenselektiver Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem unter Verwendung dieses Lasers Expired - Fee Related DE69607493T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01554295A JP3287443B2 (ja) 1995-01-04 1995-01-04 偏波変調可能な半導体レーザおよびこれを用いた光通信方式
JP01554095A JP3246703B2 (ja) 1995-01-04 1995-01-04 偏波変調可能な半導体レーザおよびこれを用いた光通信方式

Publications (2)

Publication Number Publication Date
DE69607493D1 DE69607493D1 (de) 2000-05-11
DE69607493T2 true DE69607493T2 (de) 2001-04-05

Family

ID=26351714

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607493T Expired - Fee Related DE69607493T2 (de) 1995-01-04 1996-01-03 Polarisationsmodenselektiver Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem unter Verwendung dieses Lasers

Country Status (3)

Country Link
US (1) US5648978A (de)
EP (1) EP0721240B1 (de)
DE (1) DE69607493T2 (de)

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JP3323725B2 (ja) * 1995-12-08 2002-09-09 キヤノン株式会社 偏波変調レーザ、その駆動方法及びそれを用いた光通信システム
US6031860A (en) * 1996-08-22 2000-02-29 Canon Kabushiki Kaisha Optical device capable of switching output intensity of light of predetermined polarized wave, optical transmitter using the device, network using the transmitter, and method of driving optical device
US6310707B1 (en) * 1996-10-25 2001-10-30 Seiko Epson Corporation Optical wireless data communication system, and transmitter and receiver used therefor
US5784399A (en) * 1996-12-19 1998-07-21 Xerox Corporation Polarization mode selection by distributed Bragg reflector in a quantum well laser
US6963598B1 (en) 2000-05-23 2005-11-08 Finisar Corporation System and method for VCSEL polarization control
US7627018B1 (en) * 2000-05-26 2009-12-01 Opticomp Corporation Polarization control using diffraction gratings in VCSEL waveguide grating couplers
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
US7065124B2 (en) * 2000-11-28 2006-06-20 Finlsar Corporation Electron affinity engineered VCSELs
US6905900B1 (en) 2000-11-28 2005-06-14 Finisar Corporation Versatile method and system for single mode VCSELs
US6990135B2 (en) * 2002-10-28 2006-01-24 Finisar Corporation Distributed bragg reflector for optoelectronic device
US6836501B2 (en) * 2000-12-29 2004-12-28 Finisar Corporation Resonant reflector for increased wavelength and polarization control
TWI227799B (en) * 2000-12-29 2005-02-11 Honeywell Int Inc Resonant reflector for increased wavelength and polarization control
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
KR100453814B1 (ko) * 2002-02-07 2004-10-20 한국전자통신연구원 이종 회절격자를 가지는 반도체 광소자 및 그 제조 방법
US6965626B2 (en) * 2002-09-03 2005-11-15 Finisar Corporation Single mode VCSEL
US6813293B2 (en) * 2002-11-21 2004-11-02 Finisar Corporation Long wavelength VCSEL with tunnel junction, and implant
KR100526999B1 (ko) * 2002-12-13 2005-11-08 한국전자통신연구원 다영역 ｄｆｂ 레이저 다이오드
KR100519921B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 초고주파 펄스 광원소자
US20040222363A1 (en) * 2003-05-07 2004-11-11 Honeywell International Inc. Connectorized optical component misalignment detection system
US7298942B2 (en) 2003-06-06 2007-11-20 Finisar Corporation Pluggable optical optic system having a lens fiber stop
US7433381B2 (en) 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
US7075962B2 (en) 2003-06-27 2006-07-11 Finisar Corporation VCSEL having thermal management
US7277461B2 (en) * 2003-06-27 2007-10-02 Finisar Corporation Dielectric VCSEL gain guide
US7054345B2 (en) 2003-06-27 2006-05-30 Finisar Corporation Enhanced lateral oxidation
US20060056762A1 (en) * 2003-07-02 2006-03-16 Honeywell International Inc. Lens optical coupler
US7210857B2 (en) * 2003-07-16 2007-05-01 Finisar Corporation Optical coupling system
US20050013542A1 (en) * 2003-07-16 2005-01-20 Honeywell International Inc. Coupler having reduction of reflections to light source
US6887801B2 (en) * 2003-07-18 2005-05-03 Finisar Corporation Edge bead control method and apparatus
US7031363B2 (en) * 2003-10-29 2006-04-18 Finisar Corporation Long wavelength VCSEL device processing
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) * 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
EP2138882A3 (de) * 2008-06-24 2012-02-22 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Optische Vorrichtung zur Lichterzeugung durch Lumineszenz, die zu einem optischen Wellenleiter gekoppelt ist.
JP2011119434A (ja) * 2009-12-03 2011-06-16 Renesas Electronics Corp 半導体レーザ素子及びその製造方法
KR101845514B1 (ko) * 2010-12-17 2018-04-04 삼성전자주식회사 소형 광 변조기 및 이를 포함하는 광 송신기
US9310561B1 (en) * 2013-11-27 2016-04-12 Aurrion, Inc. Multiport photonic device with asymmetric waveguides
US9618698B2 (en) * 2014-11-06 2017-04-11 Huawei Technologies Co., Ltd. Optical waveguide crossings
CN106451076B (zh) * 2016-10-09 2019-11-29 中国科学院半导体研究所 四波长输出半导体激光器及其制备方法
JP7286389B2 (ja) * 2019-04-15 2023-06-05 キヤノン株式会社 無線通信装置、無線通信システムおよび通信方法

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JPS62144426A (ja) * 1985-12-19 1987-06-27 Matsushita Electric Ind Co Ltd 光伝送装置
JPS6455889A (en) * 1987-08-27 1989-03-02 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH02159781A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 光通信装置
US5220573A (en) * 1989-03-10 1993-06-15 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
FR2650399B1 (fr) * 1989-07-28 1991-10-11 Philips Electronique Lab Dispositif semiconducteur incluant un coupleur directionnel pour les composantes te, tm
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
US5497390A (en) * 1992-01-31 1996-03-05 Nippon Telegraph And Telephone Corporation Polarization mode switching semiconductor laser apparatus
JPH0720329A (ja) * 1993-06-23 1995-01-24 Canon Inc 光合分波器
JP3226065B2 (ja) * 1993-06-28 2001-11-05 キヤノン株式会社 単一波長半導体レーザ

Also Published As

Publication number Publication date
DE69607493D1 (de) 2000-05-11
US5648978A (en) 1997-07-15
EP0721240A1 (de) 1996-07-10
EP0721240B1 (de) 2000-04-05

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee