DE69507347D1 - Polarisationsselektiver Halbleiterlaser, Lichtsender, und optisches Kommunikationssystem unter Verwendung dieses Lasers - Google Patents

Polarisationsselektiver Halbleiterlaser, Lichtsender, und optisches Kommunikationssystem unter Verwendung dieses Lasers

Info

Publication number
DE69507347D1
DE69507347D1 DE69507347T DE69507347T DE69507347D1 DE 69507347 D1 DE69507347 D1 DE 69507347D1 DE 69507347 T DE69507347 T DE 69507347T DE 69507347 T DE69507347 T DE 69507347T DE 69507347 D1 DE69507347 D1 DE 69507347D1
Authority
DE
Germany
Prior art keywords
laser
communication system
optical communication
light transmitter
polarization selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69507347T
Other languages
English (en)
Other versions
DE69507347T2 (de
Inventor
Jun Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69507347D1 publication Critical patent/DE69507347D1/de
Publication of DE69507347T2 publication Critical patent/DE69507347T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
DE69507347T 1994-02-18 1995-02-16 Polarisationsselektiver Halbleiterlaser, Lichtsender, und optisches Kommunikationssystem unter Verwendung dieses Lasers Expired - Fee Related DE69507347T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04519794A JP3226073B2 (ja) 1994-02-18 1994-02-18 偏波変調可能な半導体レーザおよびその使用法

Publications (2)

Publication Number Publication Date
DE69507347D1 true DE69507347D1 (de) 1999-03-04
DE69507347T2 DE69507347T2 (de) 1999-07-15

Family

ID=12712553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69507347T Expired - Fee Related DE69507347T2 (de) 1994-02-18 1995-02-16 Polarisationsselektiver Halbleiterlaser, Lichtsender, und optisches Kommunikationssystem unter Verwendung dieses Lasers

Country Status (4)

Country Link
US (1) US5790581A (de)
EP (1) EP0668642B1 (de)
JP (1) JP3226073B2 (de)
DE (1) DE69507347T2 (de)

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JPH0969671A (ja) * 1995-08-30 1997-03-11 Canon Inc 偏波変調可能な分布帰還型半導体レーザ
US5949561A (en) * 1997-04-15 1999-09-07 Lucent Technologies Inc. Wavelength demultiplexing multiple quantum well photodetector
JPH11243256A (ja) 1997-12-03 1999-09-07 Canon Inc 分布帰還形半導体レーザとその駆動方法
US6909734B2 (en) 1999-09-02 2005-06-21 Agility Communications, Inc. High-power, manufacturable sampled grating distributed Bragg reflector lasers
US6937638B2 (en) * 2000-06-09 2005-08-30 Agility Communications, Inc. Manufacturable sampled grating mirrors
CN1240167C (zh) 2000-05-04 2006-02-01 艾吉利提通信公司 用于取样光栅分布型布拉格反射激光器的改进反射镜和腔
ATE274760T1 (de) * 2000-06-02 2004-09-15 Agility Communications Inc Hochleistungslaser mit gesampeltem gitter und verteiltem bragg-reflektor
US6665105B2 (en) 2001-07-31 2003-12-16 Agility Communications, Inc. Tunable electro-absorption modulator
CN100377453C (zh) * 2006-05-12 2008-03-26 何建军 带有电吸收光栅结构的q-调制半导体激光器
US20090074426A1 (en) * 2007-09-14 2009-03-19 Lucent Technologies Inc. Monolithic dqpsk receiver
US20110134957A1 (en) * 2009-12-07 2011-06-09 Emcore Corporation Low Chirp Coherent Light Source
KR20130120266A (ko) * 2012-04-25 2013-11-04 한국전자통신연구원 분포 궤환형 레이저 다이오드
US9306372B2 (en) 2013-03-14 2016-04-05 Emcore Corporation Method of fabricating and operating an optical modulator
US9059801B1 (en) 2013-03-14 2015-06-16 Emcore Corporation Optical modulator
US9306672B2 (en) 2013-03-14 2016-04-05 Encore Corporation Method of fabricating and operating an optical modulator
US9564733B2 (en) 2014-09-15 2017-02-07 Emcore Corporation Method of fabricating and operating an optical modulator
US10074959B2 (en) 2016-08-03 2018-09-11 Emcore Corporation Modulated laser source and methods of its fabrication and operation

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE361035C (de) * 1920-04-22 1922-10-09 Ferdinand Courtoy Schleudersieb mit auf einer gemeinsamen Welle sitzenden und untereinander angeordneten umlaufenden Sieben
JPS60124887A (ja) * 1983-12-09 1985-07-03 Kokusai Denshin Denwa Co Ltd <Kdd> 分布帰還形半導体レ−ザ
JPS6455889A (en) * 1987-08-27 1989-03-02 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPH01291483A (ja) * 1988-05-19 1989-11-24 Nec Corp 単一軸モード半導体レーザ
US4918701A (en) * 1988-09-27 1990-04-17 Siemens Aktiengesellschaft Semiconductor laser arrangement and method for the operation thereof
JPH0298186A (ja) * 1988-10-04 1990-04-10 Fujitsu Ltd 半導体発光装置
JPH02159781A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 光通信装置
US5202782A (en) * 1990-01-19 1993-04-13 Canon Kabushiki Kaisha Optical communication method and optical communication system
US5007063A (en) * 1990-02-12 1991-04-09 Eastman Kodak Company Laser diode
JP3154418B2 (ja) * 1990-06-21 2001-04-09 キヤノン株式会社 半導体光増幅装置、光通信システム、双方向光通信システム、光通信ネットワーク、及び集積型光ノード
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
JP2986604B2 (ja) * 1992-01-13 1999-12-06 キヤノン株式会社 半導体光フィルタ、その選択波長の制御方法及びそれを用いた光通信システム
EP0562518B1 (de) * 1992-03-23 1997-12-29 Canon Kabushiki Kaisha Optische Vorrichtung und Methode unter Benutzung dieser Vorrichtung, welche die Änderung einer über die beiden Anschlussenden eines verstärkenden Bereichs abfallenden Spannung ausnutzt
EP0606821A1 (de) * 1993-01-11 1994-07-20 International Business Machines Corporation Lichtemittierende Heterostrukturen mit modulierter Gitterverformung
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法

Also Published As

Publication number Publication date
US5790581A (en) 1998-08-04
DE69507347T2 (de) 1999-07-15
EP0668642A1 (de) 1995-08-23
EP0668642B1 (de) 1999-01-20
JP3226073B2 (ja) 2001-11-05
JPH07231134A (ja) 1995-08-29

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee