DE69516988T2 - Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem - Google Patents

Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem

Info

Publication number
DE69516988T2
DE69516988T2 DE69516988T DE69516988T DE69516988T2 DE 69516988 T2 DE69516988 T2 DE 69516988T2 DE 69516988 T DE69516988 T DE 69516988T DE 69516988 T DE69516988 T DE 69516988T DE 69516988 T2 DE69516988 T2 DE 69516988T2
Authority
DE
Germany
Prior art keywords
communication system
semiconductor laser
optical communication
modulation process
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69516988T
Other languages
English (en)
Other versions
DE69516988D1 (de
Inventor
Tamayo Hiroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69516988D1 publication Critical patent/DE69516988D1/de
Publication of DE69516988T2 publication Critical patent/DE69516988T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
DE69516988T 1994-12-17 1995-12-14 Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem Expired - Fee Related DE69516988T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6334066A JPH08172237A (ja) 1994-12-17 1994-12-17 半導体レーザ、その変調方式およびそれを用いた光通信システム

Publications (2)

Publication Number Publication Date
DE69516988D1 DE69516988D1 (de) 2000-06-21
DE69516988T2 true DE69516988T2 (de) 2000-11-30

Family

ID=18273135

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69516988T Expired - Fee Related DE69516988T2 (de) 1994-12-17 1995-12-14 Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem

Country Status (4)

Country Link
US (1) US5757840A (de)
EP (1) EP0717481B1 (de)
JP (1) JPH08172237A (de)
DE (1) DE69516988T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3518837B2 (ja) * 1996-08-22 2004-04-12 キヤノン株式会社 出力光の偏波を切り換えることができる半導体レーザ及び半導体レーザ装置及びその駆動方法
JP3630977B2 (ja) * 1998-03-19 2005-03-23 キヤノン株式会社 位相調整領域を有するレーザ及びその使用法
JP2000250083A (ja) * 1999-03-03 2000-09-14 Fuji Photo Film Co Ltd 光波長変換モジュール及び画像記録方法
US6455833B1 (en) * 1999-03-09 2002-09-24 Micron Technology, Inc. Superposed multi-junction color APS
US6946715B2 (en) * 2003-02-19 2005-09-20 Micron Technology, Inc. CMOS image sensor and method of fabrication
JP4579033B2 (ja) 2005-03-31 2010-11-10 富士通株式会社 光半導体装置とその駆動方法
JP4892467B2 (ja) * 2007-12-11 2012-03-07 日本オプネクスト株式会社 レーザ装置およびその制御方法
JP2012186418A (ja) * 2011-03-08 2012-09-27 Nippon Telegr & Teleph Corp <Ntt> 活性層分離型位相シフトｄｆｂレーザ
CN103762500B (zh) * 2013-11-27 2017-01-18 南京大学 基于重构‑等效啁啾的非对称等效切趾取样光栅及激光器
CN107658694B (zh) * 2017-11-16 2020-01-03 太原理工大学 一种随机散射光反馈的InP基单片集成混沌半导体激光器芯片

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61216383A (ja) * 1985-03-20 1986-09-26 Nec Corp 分布帰還型半導体レ−ザ
JPS6242593A (ja) 1985-08-20 1987-02-24 Fujitsu Ltd 半導体発光装置
US4740987A (en) * 1986-06-30 1988-04-26 American Telephone And Telegraph Company, At&T Bell Laboratories Distributed-feedback laser having enhanced mode selectivity
JP2533355B2 (ja) * 1988-03-11 1996-09-11 国際電信電話株式会社 分布帰還形半導体レ―ザ装置およびその電流注入方法
JPH02159781A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 光通信装置
JP2689698B2 (ja) * 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
US5117469A (en) * 1991-02-01 1992-05-26 Bell Communications Research, Inc. Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well
JPH07307530A (ja) * 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ
US5659560A (en) * 1994-05-12 1997-08-19 Canon Kabushiki Kaisha Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same

Also Published As

Publication number Publication date
EP0717481B1 (de) 2000-05-17
US5757840A (en) 1998-05-26
DE69516988D1 (de) 2000-06-21
JPH08172237A (ja) 1996-07-02
EP0717481A1 (de) 1996-06-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee