DE69516988D1 - Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem - Google Patents
Halbleiterlaser, Modulationsverfahren und optisches KommunikationssystemInfo
- Publication number
- DE69516988D1 DE69516988D1 DE69516988T DE69516988T DE69516988D1 DE 69516988 D1 DE69516988 D1 DE 69516988D1 DE 69516988 T DE69516988 T DE 69516988T DE 69516988 T DE69516988 T DE 69516988T DE 69516988 D1 DE69516988 D1 DE 69516988D1
- Authority
- DE
- Germany
- Prior art keywords
- communication system
- semiconductor laser
- optical communication
- modulation process
- modulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
- H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6334066A JPH08172237A (ja) | 1994-12-17 | 1994-12-17 | 半導体レーザ、その変調方式およびそれを用いた光通信システム |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69516988D1 true DE69516988D1 (de) | 2000-06-21 |
DE69516988T2 DE69516988T2 (de) | 2000-11-30 |
Family
ID=18273135
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69516988T Expired - Fee Related DE69516988T2 (de) | 1994-12-17 | 1995-12-14 | Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem |
Country Status (4)
Country | Link |
---|---|
US (1) | US5757840A (de) |
EP (1) | EP0717481B1 (de) |
JP (1) | JPH08172237A (de) |
DE (1) | DE69516988T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3518837B2 (ja) * | 1996-08-22 | 2004-04-12 | キヤノン株式会社 | 出力光の偏波を切り換えることができる半導体レーザ及び半導体レーザ装置及びその駆動方法 |
JP3630977B2 (ja) * | 1998-03-19 | 2005-03-23 | キヤノン株式会社 | 位相調整領域を有するレーザ及びその使用法 |
JP2000250083A (ja) * | 1999-03-03 | 2000-09-14 | Fuji Photo Film Co Ltd | 光波長変換モジュール及び画像記録方法 |
US6455833B1 (en) * | 1999-03-09 | 2002-09-24 | Micron Technology, Inc. | Superposed multi-junction color APS |
US6946715B2 (en) * | 2003-02-19 | 2005-09-20 | Micron Technology, Inc. | CMOS image sensor and method of fabrication |
JP4579033B2 (ja) | 2005-03-31 | 2010-11-10 | 富士通株式会社 | 光半導体装置とその駆動方法 |
JP4892467B2 (ja) * | 2007-12-11 | 2012-03-07 | 日本オプネクスト株式会社 | レーザ装置およびその制御方法 |
JP2012186418A (ja) * | 2011-03-08 | 2012-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 活性層分離型位相シフトdfbレーザ |
CN103762500B (zh) * | 2013-11-27 | 2017-01-18 | 南京大学 | 基于重构‑等效啁啾的非对称等效切趾取样光栅及激光器 |
CN107658694B (zh) * | 2017-11-16 | 2020-01-03 | 太原理工大学 | 一种随机散射光反馈的InP基单片集成混沌半导体激光器芯片 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61216383A (ja) * | 1985-03-20 | 1986-09-26 | Nec Corp | 分布帰還型半導体レ−ザ |
JPS6242593A (ja) | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | 半導体発光装置 |
US4740987A (en) * | 1986-06-30 | 1988-04-26 | American Telephone And Telegraph Company, At&T Bell Laboratories | Distributed-feedback laser having enhanced mode selectivity |
JP2533355B2 (ja) * | 1988-03-11 | 1996-09-11 | 国際電信電話株式会社 | 分布帰還形半導体レ―ザ装置およびその電流注入方法 |
JPH02159781A (ja) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | 光通信装置 |
JP2689698B2 (ja) * | 1990-07-19 | 1997-12-10 | 国際電信電話株式会社 | αパラメータ符号を反転させた半導体素子 |
US5117469A (en) * | 1991-02-01 | 1992-05-26 | Bell Communications Research, Inc. | Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well |
JPH07307530A (ja) * | 1994-03-17 | 1995-11-21 | Canon Inc | 偏波変調可能な半導体レーザ |
US5659560A (en) * | 1994-05-12 | 1997-08-19 | Canon Kabushiki Kaisha | Apparatus and method for driving oscillation polarization selective light source, and optical communication system using the same |
-
1994
- 1994-12-17 JP JP6334066A patent/JPH08172237A/ja active Pending
-
1995
- 1995-12-14 EP EP95119711A patent/EP0717481B1/de not_active Expired - Lifetime
- 1995-12-14 DE DE69516988T patent/DE69516988T2/de not_active Expired - Fee Related
-
1997
- 1997-09-05 US US08/923,972 patent/US5757840A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0717481A1 (de) | 1996-06-19 |
DE69516988T2 (de) | 2000-11-30 |
US5757840A (en) | 1998-05-26 |
EP0717481B1 (de) | 2000-05-17 |
JPH08172237A (ja) | 1996-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |