DE68918238T2 - Laser mit einem Mehrfachresonator. - Google Patents

Laser mit einem Mehrfachresonator.

Info

Publication number
DE68918238T2
DE68918238T2 DE68918238T DE68918238T DE68918238T2 DE 68918238 T2 DE68918238 T2 DE 68918238T2 DE 68918238 T DE68918238 T DE 68918238T DE 68918238 T DE68918238 T DE 68918238T DE 68918238 T2 DE68918238 T2 DE 68918238T2
Authority
DE
Germany
Prior art keywords
laser
multiple resonator
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68918238T
Other languages
English (en)
Other versions
DE68918238D1 (de
Inventor
Paul Anthony Kirkby
Ian Hugh White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Application granted granted Critical
Publication of DE68918238D1 publication Critical patent/DE68918238D1/de
Publication of DE68918238T2 publication Critical patent/DE68918238T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/105Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08Construction or shape of optical resonators or components thereof
    • H01S3/081Construction or shape of optical resonators or components thereof comprising three or more reflectors
    • H01S3/082Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
    • H01S3/0823Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression incorporating a dispersive element, e.g. a prism for wavelength selection
    • H01S3/0826Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression incorporating a dispersive element, e.g. a prism for wavelength selection using a diffraction grating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/026Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/10Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14External cavity lasers
    • H01S5/141External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • H01S5/4062Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Lasers (AREA)
DE68918238T 1988-11-23 1989-11-20 Laser mit einem Mehrfachresonator. Expired - Fee Related DE68918238T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8827385A GB2225482B (en) 1988-11-23 1988-11-23 Multichannel cavity laser

Publications (2)

Publication Number Publication Date
DE68918238D1 DE68918238D1 (de) 1994-10-20
DE68918238T2 true DE68918238T2 (de) 1995-02-02

Family

ID=10647343

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68918238T Expired - Fee Related DE68918238T2 (de) 1988-11-23 1989-11-20 Laser mit einem Mehrfachresonator.

Country Status (5)

Country Link
US (1) US5115444A (de)
EP (1) EP0370739B1 (de)
JP (1) JP2770996B2 (de)
DE (1) DE68918238T2 (de)
GB (1) GB2225482B (de)

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JP2755504B2 (ja) * 1991-06-10 1998-05-20 松下電器産業株式会社 位相同期型半導体レーザ
US5386426A (en) * 1992-09-10 1995-01-31 Hughes Aircraft Company Narrow bandwidth laser array system
US5351262A (en) * 1992-09-10 1994-09-27 Bell Communications Research, Inc. Multi-stripe array grating integrated cavity laser
US5373517A (en) * 1993-02-19 1994-12-13 At&T Corp. Rapidly tunable integrated laser
US5379310A (en) * 1993-05-06 1995-01-03 Board Of Trustees Of The University Of Illinois External cavity, multiple wavelength laser transmitter
US5394489A (en) * 1993-07-27 1995-02-28 At&T Corp. Wavelength division multiplexed optical communication transmitters
US5434874A (en) * 1993-10-08 1995-07-18 Hewlett-Packard Company Method and apparatus for optimizing output characteristics of a tunable external cavity laser
US5390200A (en) * 1993-10-13 1995-02-14 At&T Corp. High power, single-frequency tunable laser
WO1995013638A1 (en) * 1993-11-08 1995-05-18 International Business Machines Corporation Hybrid external coupled cavity semiconductor laser device
US5396507A (en) * 1993-11-15 1995-03-07 At&T Corp. Reflective digitally tunable laser
DE69428495T2 (de) * 1993-11-26 2002-04-11 Koninkl Philips Electronics Nv Multimoden-Laser für ein optisches Informationsverarbeitungssystem, insbesondere für ein neuronales Netz
US5517517A (en) * 1994-06-30 1996-05-14 At&T Corp. Semiconductor laser having integrated waveguiding lens
US5969865A (en) * 1995-07-26 1999-10-19 Fujitsu Limited Optical apparatus which uses a virtually imaged phased array to produce chromatic dispersion
US6055250A (en) * 1997-11-07 2000-04-25 Lucent Technologies Inc. Multifrequency laser having reduced wave mixing
US6314115B1 (en) 1998-05-15 2001-11-06 University Of Central Florida Hybrid WDM-TDM optical communication and data link
US6256328B1 (en) 1998-05-15 2001-07-03 University Of Central Florida Multiwavelength modelocked semiconductor diode laser
US6661816B2 (en) 1998-06-11 2003-12-09 University Of Central Florida Multiwavelength modelocked lasers
US6801551B1 (en) 1998-05-15 2004-10-05 University Of Central Florida Programmable multiwavelength modelocked laser
US6327292B1 (en) 1998-09-08 2001-12-04 Massachusetts Institute Of Technology External cavity laser source using spectral beam combining in two dimensions
US6208679B1 (en) 1998-09-08 2001-03-27 Massachusetts Institute Of Technology High-power multi-wavelength external cavity laser
US6456756B1 (en) 1999-10-25 2002-09-24 Aculight Corporation Fiber raman amplifier pumped by an incoherently beam combined diode laser
US6501782B1 (en) 1999-10-25 2002-12-31 Aculight Corporation Compact laser apparatus
US6538817B1 (en) 1999-10-25 2003-03-25 Aculight Corporation Method and apparatus for optical coherence tomography with a multispectral laser source
US6529542B1 (en) * 2000-04-04 2003-03-04 Aculight Corporation Incoherent beam combined optical system utilizing a lens array
US6411424B1 (en) * 2000-09-18 2002-06-25 Intel Corporation Integrated laser array devices
US6697192B1 (en) 2000-11-08 2004-02-24 Massachusetts Institute Of Technology High power, spectrally combined laser systems and related methods
US6791747B2 (en) * 2001-04-25 2004-09-14 Massachusetts Institute Of Technology Multichannel laser transmitter suitable for wavelength-division multiplexing applications
US20020170591A1 (en) * 2001-05-15 2002-11-21 Pharmaseq, Inc. Method and apparatus for powering circuitry with on-chip solar cells within a common substrate
US6665471B1 (en) 2001-08-13 2003-12-16 Nlight Photonics Corporation System and method for optimizing the performance of multiple gain element laser
US6836487B1 (en) 2001-08-31 2004-12-28 Nlight Photonics Corporation Spectrally tailored raman pump laser
US6907051B1 (en) 2001-08-31 2005-06-14 Nlight Photonics Corporation Dynamically spectrally tailored raman pump laser
US6657775B1 (en) 2001-08-31 2003-12-02 Nlight Photonics Corporation System and method for providing a controlled linewidth external cavity laser
US6714581B2 (en) * 2001-10-01 2004-03-30 Christopher J. Corcoran Compact phase locked laser array and related techniques
US7539232B1 (en) 2001-10-01 2009-05-26 Corcoran Christopher J Compact phase locked laser array and related techniques
US7672546B2 (en) * 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
US20080044128A1 (en) * 2001-10-09 2008-02-21 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPICs) AND OPTICAL TRANSPORT NETWORK SYSTEM EMPLOYING TxPICs
AU2002334906A1 (en) * 2001-10-09 2003-04-22 Infinera Corporation Transmitter photonic integrated circuits (txpic) and optical transport networks employing txpics
US7751658B2 (en) * 2001-10-09 2010-07-06 Infinera Corporation Monolithic transmitter photonic integrated circuit (TxPIC) having tunable modulated sources with feedback system for source power level or wavelength tuning
US20030198260A1 (en) * 2002-04-18 2003-10-23 Hogan Josh N. Method and apparatus for generating multiple wavelength radiation
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US7889776B2 (en) * 2004-01-20 2011-02-15 Trumpf Photonics Inc. High-power semiconductor laser
US20050249256A1 (en) * 2004-05-10 2005-11-10 Lightip Technologies Inc. Wavelength switchable semiconductor laser
US7265896B2 (en) * 2004-12-17 2007-09-04 Collinear Corporation Optical power combining for optical frequency conversion having nonlinear feedback
FR2884976B1 (fr) * 2005-04-25 2007-07-13 Cie Ind Des Lasers Cilas Sa Systeme de pompage pour source laser et source laser comportant un tel systeme de pompage
CA2521731A1 (en) * 2005-05-09 2006-11-09 Jian-Jun He Wavelength switchable semiconductor laser
US20070133649A1 (en) * 2005-12-09 2007-06-14 Kwon Oh K Wavelength tunable light source
CN104009386B (zh) * 2014-06-11 2017-12-22 中国科学院半导体研究所 改善高功率固体激光器光束质量的装置

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US3624551A (en) * 1969-06-27 1971-11-30 North American Rockwell Selectively tunable gaseous laser
FR2137166B1 (de) * 1971-05-14 1974-03-08 Thomson Csf
US3928817A (en) * 1974-08-29 1975-12-23 Us Air Force Multiple-selected-line unstable resonator
FR2417866A1 (fr) * 1978-02-17 1979-09-14 Thomson Csf Laser multiple a resonateur distribue
US4318058A (en) * 1979-04-24 1982-03-02 Nippon Electric Co., Ltd. Semiconductor diode laser array
US4479224A (en) * 1981-10-26 1984-10-23 Massachusetts Institute Of Technology Fiber-coupled external cavity semiconductor laser
US4441186A (en) * 1981-12-31 1984-04-03 Gte Products Corporation Electronically switchable multiwavelength laser system
US4502144A (en) * 1982-06-10 1985-02-26 Westinghouse Electric Corp. Gain tuned laser resonator
US4652080A (en) * 1982-06-22 1987-03-24 Plessey Overseas Limited Optical transmission systems
US4516837A (en) * 1983-02-22 1985-05-14 Sperry Corporation Electro-optical switch for unpolarized optical signals
US4507790A (en) * 1983-04-01 1985-03-26 The United States Of America As Represented By The Secretary Of The Army Laser system with partitioned prism
GB8333054D0 (en) * 1983-12-12 1984-01-18 British Telecomm Optical wavelength selector
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US4696012A (en) * 1985-06-11 1987-09-22 Texas Instruments Incorporated Tunable multiline/multiband laser
US4677629A (en) * 1985-09-30 1987-06-30 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Means for phase locking the outputs of a surface emitting laser diode array
JPS62134987A (ja) * 1985-12-09 1987-06-18 Matsushita Electric Ind Co Ltd 波長多重光通信用光源
FR2609180B1 (fr) * 1986-12-31 1989-11-03 Commissariat Energie Atomique Multiplexeur-demultiplexeur utilisant un reseau concave elliptique et realise en optique integree
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US4736345A (en) * 1987-03-27 1988-04-05 Mobil Oil Corporation Compliant spacer for a marine seismic streamer
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US4862467A (en) * 1988-03-18 1989-08-29 Massachusetts Institute Of Technology One- and two-dimensional optical wavefront synthesis in real time
JP2736894B2 (ja) * 1988-05-27 1998-04-02 株式会社日立製作所 光ピックアップ並びにそれを備えた光ディスク装置及びロータリエンコーダ

Also Published As

Publication number Publication date
JP2770996B2 (ja) 1998-07-02
EP0370739B1 (de) 1994-09-14
EP0370739A2 (de) 1990-05-30
EP0370739A3 (en) 1990-12-05
GB8827385D0 (en) 1988-12-29
GB2225482A (en) 1990-05-30
US5115444A (en) 1992-05-19
JPH02244784A (ja) 1990-09-28
GB2225482B (en) 1992-10-14
DE68918238D1 (de) 1994-10-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee