EP0913850A1 - Schmaler Titan Enthaltende Draht, verfahren zur Herstellung, Struktur, und elektronemittierende Vorrichtung - Google Patents

Schmaler Titan Enthaltende Draht, verfahren zur Herstellung, Struktur, und elektronemittierende Vorrichtung Download PDF

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Publication number
EP0913850A1
EP0913850A1 EP98308817A EP98308817A EP0913850A1 EP 0913850 A1 EP0913850 A1 EP 0913850A1 EP 98308817 A EP98308817 A EP 98308817A EP 98308817 A EP98308817 A EP 98308817A EP 0913850 A1 EP0913850 A1 EP 0913850A1
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EP
European Patent Office
Prior art keywords
titanium
narrow
wire
nanostructure
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP98308817A
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English (en)
French (fr)
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EP0913850B1 (de
Inventor
Tatsuya Iwasaki
Tohru Den
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of EP0913850A1 publication Critical patent/EP0913850A1/de
Application granted granted Critical
Publication of EP0913850B1 publication Critical patent/EP0913850B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
EP19980308817 1997-10-30 1998-10-28 Schmaler Titan enthaltender Draht, Verfahren zur Herstellung, Struktur, und elektronemittierende Vorrichtung Expired - Lifetime EP0913850B1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP29866297 1997-10-30
JP298662/97 1997-10-30
JP31393998A JPH11246300A (ja) 1997-10-30 1998-10-19 チタンナノ細線、チタンナノ細線の製造方法、構造体及び電子放出素子
JP313939/98 1998-10-19

Publications (2)

Publication Number Publication Date
EP0913850A1 true EP0913850A1 (de) 1999-05-06
EP0913850B1 EP0913850B1 (de) 2006-05-10

Family

ID=26561612

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19980308817 Expired - Lifetime EP0913850B1 (de) 1997-10-30 1998-10-28 Schmaler Titan enthaltender Draht, Verfahren zur Herstellung, Struktur, und elektronemittierende Vorrichtung

Country Status (3)

Country Link
EP (1) EP0913850B1 (de)
JP (1) JPH11246300A (de)
DE (1) DE69834464D1 (de)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786026A1 (fr) * 1998-11-17 2000-05-19 Commissariat Energie Atomique Procede de formation de reliefs sur un substrat au moyen d'un masque de gravure ou de depot
WO2003090243A1 (en) * 2002-04-18 2003-10-30 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US7850941B2 (en) 2006-10-20 2010-12-14 General Electric Company Nanostructure arrays and methods for forming same
USRE47287E1 (en) 2010-03-22 2019-03-12 Mapper Lithography Ip B.V. Lithography system, sensor, converter element and method of manufacture

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003016921A (ja) * 2000-09-20 2003-01-17 Canon Inc 構造体、電子放出素子、画像形成装置およびそれらの製造方法
JP4496630B2 (ja) * 2000-09-27 2010-07-07 株式会社豊田中央研究所 金属細線触媒
KR100388433B1 (ko) * 2001-10-15 2003-06-25 한국과학기술연구원 금속 나노선의 제조방법
KR20030084279A (ko) * 2002-04-26 2003-11-01 이진규 다공성 알루미나 또는 나노패턴 알루미늄을 이용하여대면적의 나노표면 구조를 가지는 물질을 제조하는 방법
JP4840961B2 (ja) * 2004-03-23 2011-12-21 健二 久保村 高アスペクト比酸化鉄ウィスカー、高アスペクト比酸化チタンウィスカー及びこれらを含む構造並びにその製造方法
JP4696606B2 (ja) * 2004-03-23 2011-06-08 カシオ計算機株式会社 電子機器
JP2009507397A (ja) * 2005-08-22 2009-02-19 キュー・ワン・ナノシステムズ・インコーポレイテッド ナノ構造およびそれを実施する光起電力セル
JP5007034B2 (ja) * 2005-09-14 2012-08-22 公益財団法人高輝度光科学研究センター 光電変換素子及びそれを用いた電子線発生装置
JP2007111816A (ja) * 2005-10-19 2007-05-10 National Institute For Materials Science 多機能ナノワイヤとその製造方法、多機能ナノワイヤを用いた濃縮方法
JP4734532B2 (ja) * 2005-11-28 2011-07-27 Ｔｏｔｏ株式会社 電子放出素子およびその製造方法
KR100822745B1 (ko) 2006-12-05 2008-04-17 한양대학교 산학협력단 다공성 나노 템플레이트를 이용하여 제조된 반도체 나노선및 이의 제조방법과, 이를 포함하는 반도체 소자

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783325A (en) * 1971-10-21 1974-01-01 Us Army Field effect electron gun having at least a million emitting fibers per square centimeter
US4163918A (en) * 1977-12-27 1979-08-07 Joe Shelton Electron beam forming device
US4345181A (en) * 1980-06-02 1982-08-17 Joe Shelton Edge effect elimination and beam forming designs for field emitting arrays
US4379250A (en) * 1979-10-19 1983-04-05 Hitachi, Ltd. Field emission cathode and method of fabricating the same
EP0351110A1 (de) * 1988-07-13 1990-01-17 THORN EMI plc Verfahren zur Herstellung einer kalten Kathode, einer Vorrichtung zur Feldemission und eine nach diesem Verfahren hergestellte Feldemissionseinrichtung
EP0364964A2 (de) * 1988-10-17 1990-04-25 Matsushita Electric Industrial Co., Ltd. Feldemissions-Kathoden
US5164632A (en) * 1990-05-31 1992-11-17 Ricoh Company, Ltd. Electron emission element for use in a display device
JPH0689651A (ja) * 1992-09-09 1994-03-29 Osaka Prefecture 微小真空デバイスとその製造方法
WO1995007543A1 (en) * 1993-09-08 1995-03-16 Silicon Video Corporation Fabrication and structure of electron-emitting devices having high emitter packing density
US5581091A (en) * 1994-12-01 1996-12-03 Moskovits; Martin Nanoelectric devices
DE19602595A1 (de) * 1996-01-25 1997-07-31 Bosch Gmbh Robert Verfahren zur Herstellung von Feldemissionsspitzen
WO1998048456A1 (en) * 1997-04-24 1998-10-29 Massachusetts Institute Of Technology Nanowire arrays

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3783325A (en) * 1971-10-21 1974-01-01 Us Army Field effect electron gun having at least a million emitting fibers per square centimeter
US4163918A (en) * 1977-12-27 1979-08-07 Joe Shelton Electron beam forming device
US4379250A (en) * 1979-10-19 1983-04-05 Hitachi, Ltd. Field emission cathode and method of fabricating the same
US4345181A (en) * 1980-06-02 1982-08-17 Joe Shelton Edge effect elimination and beam forming designs for field emitting arrays
EP0351110A1 (de) * 1988-07-13 1990-01-17 THORN EMI plc Verfahren zur Herstellung einer kalten Kathode, einer Vorrichtung zur Feldemission und eine nach diesem Verfahren hergestellte Feldemissionseinrichtung
EP0364964A2 (de) * 1988-10-17 1990-04-25 Matsushita Electric Industrial Co., Ltd. Feldemissions-Kathoden
US5164632A (en) * 1990-05-31 1992-11-17 Ricoh Company, Ltd. Electron emission element for use in a display device
JPH0689651A (ja) * 1992-09-09 1994-03-29 Osaka Prefecture 微小真空デバイスとその製造方法
WO1995007543A1 (en) * 1993-09-08 1995-03-16 Silicon Video Corporation Fabrication and structure of electron-emitting devices having high emitter packing density
US5581091A (en) * 1994-12-01 1996-12-03 Moskovits; Martin Nanoelectric devices
DE19602595A1 (de) * 1996-01-25 1997-07-31 Bosch Gmbh Robert Verfahren zur Herstellung von Feldemissionsspitzen
WO1998048456A1 (en) * 1997-04-24 1998-10-29 Massachusetts Institute Of Technology Nanowire arrays

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
P.HOYER ET AL.: "ELECTRODEPOSITED NANOPOROUS TiO2 film by a two-step process from anodic porous alumina", JOURNAL OF MATERIALS SCIENCE LETTERS, vol. 15, 1996, pages 1228 - 1230, XP002091820 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 345 (E - 1571) 29 June 1994 (1994-06-29) *
ROUTKEVITCH D ET AL: "NONLITHOGRAPHIC NANO-WIRE ARRAYS: FABRICATION, PHYSICS, AND DEVICE APPLICATIONS", October 1996, IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 43, NR. 10, PAGE(S) 1646 - 1658, XP002072446 *
ROUTKEVITCH D ET AL: "POROUS ANODIC ALUMINA TEMPLATES FOR ADVANCED NANOFABRICATION", 1997, ELECTROCHEMICAL SOCIETY PROCEEDINGS, VOL. 97-7, PAGE(S) 350 - 357, XP002072447 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786026A1 (fr) * 1998-11-17 2000-05-19 Commissariat Energie Atomique Procede de formation de reliefs sur un substrat au moyen d'un masque de gravure ou de depot
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US7087831B2 (en) 1999-09-22 2006-08-08 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
WO2003090243A1 (en) * 2002-04-18 2003-10-30 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US6783418B2 (en) 2002-04-18 2004-08-31 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US6787792B2 (en) 2002-04-18 2004-09-07 Hewlett-Packard Development Company, L.P. Emitter with filled zeolite emission layer
US7850941B2 (en) 2006-10-20 2010-12-14 General Electric Company Nanostructure arrays and methods for forming same
USRE47287E1 (en) 2010-03-22 2019-03-12 Mapper Lithography Ip B.V. Lithography system, sensor, converter element and method of manufacture

Also Published As

Publication number Publication date
EP0913850B1 (de) 2006-05-10
DE69834464D1 (de) 2006-06-14
JPH11246300A (ja) 1999-09-14

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