EP0830730A1 - Amplificateur operationnel - Google Patents

Amplificateur operationnel

Info

Publication number
EP0830730A1
EP0830730A1 EP97904547A EP97904547A EP0830730A1 EP 0830730 A1 EP0830730 A1 EP 0830730A1 EP 97904547 A EP97904547 A EP 97904547A EP 97904547 A EP97904547 A EP 97904547A EP 0830730 A1 EP0830730 A1 EP 0830730A1
Authority
EP
European Patent Office
Prior art keywords
transistor
operational amplifier
base
output
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97904547A
Other languages
German (de)
English (en)
Inventor
Peter Wiese
Burkhard Dick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Corporate Intellectual Property GmbH
Philips Patentverwaltung GmbH
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Corporate Intellectual Property GmbH, Philips Patentverwaltung GmbH, Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Philips Corporate Intellectual Property GmbH
Publication of EP0830730A1 publication Critical patent/EP0830730A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H03F3/45085—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3066—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the collectors of complementary power transistors being connected to the output
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45362—Indexing scheme relating to differential amplifiers the AAC comprising multiple transistors parallel coupled at their gates and drains only, e.g. in a cascode dif amp, only those forming the composite common source transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45612—Indexing scheme relating to differential amplifiers the IC comprising one or more input source followers as input stages in the IC
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45658—Indexing scheme relating to differential amplifiers the LC comprising two diodes of current mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45708—Indexing scheme relating to differential amplifiers the LC comprising one SEPP circuit as output stage

Definitions

  • the invention relates to an operational amplifier.
  • a constant current source ie a direct current source, the current of which is independent of the voltage at the base electrodes of the associated transistor pair, is connected to the common emitter lead of each of the transistor pairs.
  • the other terminal of the constant current source is connected to ground.
  • the collector electrode of a first transistor of the first transistor pair is connected to the collector electrode of a first transistor of the second transistor pair.
  • the collector electrodes of the second transistors of the transistor pairs are connected to one another accordingly.
  • the common collector connections are each connected to the positive supply voltage via a resistor and at the same time form the output terminals of the amplifier circuit.
  • the base electrode of the first transistor of the first transistor pair is connected to the base electrode of the first transistor of the second transistor pair via a DC voltage source. Accordingly, the base electrodes of the second transistors of the transistor pairs are connected to one another via a further DC voltage source.
  • These two DC voltage sources which represent a short circuit for AC signals, supply the same voltage with such polarity that the base of the first transistor of the second transistor pair is more positive than the base of the first transistor of the first transistor pair and that the base of the second transistor of the first transistor pair is more positive than the base of the second transistor of the second transistor pair.
  • the base electrodes of the first transistor of the first transistor pair and of the second transistor of the second transistor pair are connected to a low-resistance signal source.
  • a current amplifier which comprises a so-called voltage-current conversion circuit with a differential input and a differential output as well as two current sources, each of which supply the same currents.
  • the voltage-current conversion circuit has a resistor which is connected to the output terminals of the current sources.
  • PNP transistors have their emitters connected to the connection points between the output terminals of the current sources and the resistor; they convert the voltage produced by two input connections into a current.
  • second NPN transistors are connected to these input connections, while the emitters of the transistors in question are connected to the bases of the PNP transistors mentioned above.
  • the latter PNP transistors act as emitter followers, which drive the NPN transistors. The latter give off collector output currents.
  • two further PNP transistors have their bases connected to the input terminals; they form a first start circuit.
  • the emitters of these further PNP transistors are connected to the connection points between the resistor and the emitter electrodes of the first-mentioned PNP transistors, while the collectors of the transistors in question are connected to the collectors of the first-mentioned PNP transistors.
  • the other PNP transistors are not operated in continuous operation of the circuit, but are only operated at the time of commissioning, for example when the power supply or mains switch is actuated.
  • Such a circuit is intended to create a current amplifier in which the effects of the base current of a pair of transistors with a common emitter can be eliminated in a multiplier circuit in order to improve the linearity and the accuracy of the multiplication factor of the circuit in question.
  • the collector connections of the transistors of the two pairs of transistors are connected to a summing circuit to form an output current.
  • the voltages of two push-pull input connections are supplied to both pairs of emitter-coupled transistors at their base connections, via level-shifting resistors between the push-pull input connections and the base connections of the transistors.
  • a total of four level shift resistors are provided, one each between the non-inverting push-pull input connection and the base connection of a first of the transistors of the emitter-coupled pairs, and two further connections between the inverting push-pull input connection and the two other base connections.
  • the four level shift resistors are activated by four current sources.
  • the current sources are controlled as a function of the common-mode input voltage.
  • the current sources deliver their maximum current when the common mode input voltage is in the middle of their modulation range, and the current of the current sources takes on the value zero when the common mode input voltage approaches the level of one of the two supply voltage connections. A very complex circuit arrangement is necessary to achieve this effect.
  • the invention has for its object to provide an operational amplifier which can be operated at a low supply voltage, has a large modulation range for input voltage and output voltage, has a high-resistance switchable output and can be constructed with little circuit complexity.
  • an operational amplifier having a first differential amplifier which comprises a first emitter-coupled pair of a first and a second bipolar transistor of the NPN line type, a base connection of the first transistor having a first input connection of the operational amplifier and a base connection of the second Transistor with a second input terminal of the operational amplifier is connected, a second differential amplifier, which comprises a second emitter-coupled pair of a third and a fourth bipolar transistor of the NPN conduction type, a base connection of the third transistor via a first potential shift element to the first input connection and a base connection of the fourth transistor via a second potential shift element is guided to the second input terminal and the potential shifting elements are designed such that, in operation, the potentials at the base terminals of the third or fourth transistor are higher by a predetermined amount than the potentials at the first or second input terminal, a first differential current output node, at which one each
  • Collector connection of the first and the third transistor are connected to one another, a second differential current output node, at each of which a collector connection of the second and the fourth transistor are connected to one another, a control stage, the inputs of which are formed by the current output node, the control stage being used to form control currents the currents is set up at their inputs and has two outputs for delivering the control currents, and an output stage with two bipolar output transistors of opposite conduction type, the collector-emitter paths of which are connected to one another in series, one of the outputs of the control stage each having a base connection the output transistors is connected and the connection of the collector-emitter paths of the output transistors one
  • the operational amplifier according to the invention has good linearity with a low supply voltage and large modulation ranges for input voltage and output voltage, since both differential amplifiers are formed from transistors of the same conductivity type. Since transistors of the NPN conduction type generally have a higher current amplification factor than transistors of the PNP conduction type in preferred production methods, good values for the overall amplification factor of the operational amplifier can also be obtained with little effort.
  • the potential shifting elements used in the operational amplifier according to the invention manage without complex circuits for power supply and potential control.
  • the potential shifting elements are each formed by a transistor of the PNP line type, the base connections of which are connected to the associated input connections of the operational amplifier and the emitter connections of which are connected to the associated base connections of the third or fourth transistor and their base-emitter paths in operation be biased in the direction of flow.
  • control stage comprises one for each current output node
  • control stage design such that the control currents are formed as the difference between two currents, which are derived from the currents at the inputs of the control stage by current mirroring. This type of control stage design allows both linear transmission and use with very low supply voltages.
  • the single figure shows an embodiment of the operational amplifier according to the invention.
  • This comprises a first differential amplifier with a first bipolar transistor 1 and a second bipolar transistor 2, both of which are of the NPN conduction type and form a first emitter-coupled pair.
  • a second differential amplifier of the operational amplifier shown comprises a second emitter-coupled pair of a third bipolar transistor 3 and a fourth bipolar transistor 4, both of which are also of the NPN conduction type.
  • a base terminal of the first transistor 1 is connected to a first input terminal 5 of the operational amplifier.
  • This first input terminal 5 forms a non-inverting input terminal of the operational amplifier.
  • a second input terminal 6 of the operational amplifier which represents an inverting input of the operational amplifier, is connected to a base terminal of the second transistor 2.
  • a base connection of the third transistor 3 is connected to the first input connection 5 via a first potential sliding element 7.
  • a base connection of the fourth transistor 4 is connected to the second input connection 6 via a second potential shift element 8.
  • Both potential shift elements 7, 8 are each formed by a transistor of the PNP line type, in particular by their base-emitter paths, so that the Base connections of these PNP transistors are connected to the associated input connections ⁇ of the operational amplifier and the emitter connections of the PNP transistors are connected to the associated base connections of the third and fourth transistors 3 and 4, respectively.
  • the base-emitter paths of the PNP transistors are biased in the direction of flow so that the potentials at the base connections of the third and fourth transistors 3 and 4 are higher by a predetermined amount than the potentials at the first and second input connections 5 and 6.
  • the potential shifting elements 7, 8 are fed on the emitter side via a respective current source 9 or 10.
  • the first and the third transistor 1, 3 are with their
  • Collector connections are connected to a first differential current output node 11, and accordingly the second and fourth transistors 2, 4 are connected to their collector connections to a second differential current output node 12.
  • the first emitter-coupled pair 1, 2 is connected via a third current source 13 and the second emitter-coupled pair 3, 4 via a fourth current source 14 to a first current supply connection 15, here ground.
  • ground connections 15 of the potential sliding elements 7, 8 are connected to ground 15.
  • the operational amplifier shown in the figure also contains a control stage, the inputs of which are formed by the current output nodes 11, 12.
  • This control stage comprises a first current mirror comprising a first current mirror transistor 17 and a second current mirror transistor 18, a second current mirror comprising a third, fourth and fifth current mirror transistor 19, 20, 21 and a third current mirror comprising a sixth, seventh and eighth current mirror transistor 22, 23, 24
  • the first and the second current mirror together form a first current mirror arrangement, with the current at its input, which is formed by the first current output node 11, a first and a second current at a collector connection of the fourth and the fifth current mirror transistor 20, 21 are derived by current mirroring.
  • the third current mirror forms a second one Current mirror arrangement with which a third and a fourth current in collector connections of the seventh and eighth current mirror transistors 23 and 24 can be derived from the current at the second current output node 12 by current mirroring.
  • the second differential current output node 12 forms the input of this second current mirror arrangement 22, 23, 24.
  • the first, second, sixth, seventh and eighth current mirror transistors 17, 18, 22, 23, 24 are connected on the emitter side to the positive pole 16, and the third, fourth and fifth current mirror transistors are connected to ground 15 on the emitter side.
  • Base and collector connections of the first, third and sixth current mirror transistors 17, 19, 22 are each connected to one another, and the base connections of the current mirror transistors of each of the three current mirrors are each connected to one another in a conventional manner.
  • the connected base and collector connections of the first and sixth current mirror transistors 17 and 22 are connected to the first and second current output nodes 11 and 12, respectively.
  • Control stage comprising current mirrors 17 to 24, the collector connections of the fourth and seventh current mirror transistors are connected to one another; this first output of the control stage bears the reference number 25.
  • a second output 26 of the control stage connects the collector connections of the fifth and eighth current mirror transistors to one another. In addition, the collector connections of the second and third
  • the operational amplifier according to the embodiment shown also comprises an output stage with two bipolar output transistors 30, 31.
  • the first of these output transistors with the reference symbol 30 is of the PNP line type, the second output transistor 31 of the (opposite) NPN line type.
  • the collector-emitter paths of the output transistors 30, 31 are connected to one another in series, specifically via their collector connections, which are also connected to an output 32 of the operational amplifier.
  • a capacitance 28 or 29 is led from the output 32 to the first or the second output 25 or 26 of the control stage.
  • the first output transistor 30 is connected to the positive pole 16 and the second output transistor 31 is connected to ground 15.
  • a base connection of the first output transistor 30 is connected to the second output 26, and a base connection of the second output transistor 31 is connected to the first output 25 of the control stage.
  • the present operational amplifier uses two differential amplifiers 1, 2 and 3, 4 of the NPN line type in its input area. Both differential amplifiers operate on the common current output nodes 11, 12. Of the differential amplifiers serving as input stages, the first of the first and second transistors 1, 2 is used to transmit, in particular, the upper region of the
  • the second differential amplifier 3, 4 covers the lower range of the common mode input voltage as an input stage.
  • the potential shifting elements 7, 8 make it possible for the second differential amplifier 3, 4 to work with voltages of at least almost zero with respect to ground 15 at the input connections 5, 6; the potential shifting elements increase the voltages at the base connections of the third and fourth transistors 3, 4 compared to the voltages at the input connections 5 and 6 respectively by a diode flux voltage, which is also between the base and emitter connections of each of the transistors 3, 4 of the second differential amplifier occurs during operation.
  • the constant currents to be emitted by the first and second current sources 9, 10 are to be selected accordingly.
  • the current from the first differential current output node 11, the differential amplifier 1 to 4 is mirrored via the first current mirror 17, 18 to the connection point 27 and from there via the second current mirror 19 to 21 to the outputs 25, 26 of the control stage. From the second differential
  • the operational amplifier according to the invention preferably serves to create a large modulation range for its input and output voltages. This main goal is achieved with little circuit complexity, to which the combination of the collector connections of the transistors of the differential amplifiers in only two differential current output nodes also contributes.
  • the common mode input voltage and the common mode output voltage cover at least almost the entire supply voltage range between the potentials at the positive pole and to ground. In doing so, a perfect function even with very low Supply voltages, for example of 1.3 V between the positive pole and ground, are reached.
  • a capacitance diode, with which an oscillator is to be readjusted over the largest possible frequency range, can preferably be controlled with the operational amplifier according to the invention.
  • the output 32 becomes high-resistance in the currentless, switched-off state. If the output 32 is followed by a passive low-pass filter, via which the capacitance diode is driven, the operational amplifier and low-pass filter can operate as a sample and hold circuit for the tuning voltage of the capacitance diode without additional effort.
  • the operational amplifier according to the invention can preferably be used in an oscillator for a radio pager (pager).
  • the circuit arrangement shown in the exemplary embodiment for the operational amplifier according to the invention has a steepness which is doubled in the central input voltage range compared to its edge regions.
  • a current switchover between the two differential amplifiers can be provided, in which only one of the current sources assigned to the differential amplifiers is effective. In this way, the slope can be kept constant over the entire input voltage range.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un amplificateur opérationnel comportant deux amplificateurs différentiels dont le premier est commandé directement et le deuxième est commandé par l'intermédiaire de deux curseurs de potentiel. Des courants sont prélevés à partir de noeuds de sortie de courant différentiels des amplificateurs différentiels et réfléchis sous forme de courant différentiel à l'aide d'un étage de commande au niveau d'une sortie de l'amplificateur opérationnel. Ainsi, une grande plage de modulation pour l'entrée et la sortie est obtenue avec une faible tension d'alimentation. L'amplificateur opérationnel comprend également une sortie qui peut être commutée de manière à présenter une valeur ohmique élevée. Cet amplificateur opérationnel peut être réalisé sans circuits très complexes.
EP97904547A 1996-03-05 1997-03-03 Amplificateur operationnel Withdrawn EP0830730A1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19608452 1996-03-05
DE19608452 1996-03-05
PCT/IB1997/000193 WO1997033365A1 (fr) 1996-03-05 1997-03-03 Amplificateur operationnel

Publications (1)

Publication Number Publication Date
EP0830730A1 true EP0830730A1 (fr) 1998-03-25

Family

ID=7787267

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97904547A Withdrawn EP0830730A1 (fr) 1996-03-05 1997-03-03 Amplificateur operationnel

Country Status (6)

Country Link
US (1) US5936468A (fr)
EP (1) EP0830730A1 (fr)
JP (1) JPH11504791A (fr)
KR (1) KR19990008323A (fr)
CN (1) CN1079611C (fr)
WO (1) WO1997033365A1 (fr)

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JP3416479B2 (ja) * 1997-09-03 2003-06-16 キヤノン株式会社 演算増幅器
US6121836A (en) * 1998-05-08 2000-09-19 Lucent Technologies Differential amplifier
US6157255A (en) * 1999-01-28 2000-12-05 Agilent Technologies High performance operational amplifier
ITMI991371A1 (it) * 1999-06-18 2000-12-18 Ericsson Telefon Ab L M Amplificatore di architettura perfezionata ad alta precisione elevatavelocita' e basso consumo di potenza
FR2797537B1 (fr) * 1999-08-09 2001-10-19 St Microelectronics Sa Amplificateur operationnel a centrage de tension de decalage, et compatible basse-tension
US6420931B1 (en) * 2000-04-06 2002-07-16 National Semiconductor Corporation High swing output circuit having differential to single-ended conversion and method
US6255909B1 (en) * 2000-11-02 2001-07-03 Texas Instruments Incorporated Ultra low voltage CMOS class AB power amplifier with parasitic capacitance internal compensation
JP3761089B2 (ja) * 2003-04-25 2006-03-29 ローム株式会社 差動電流出力装置
US7180369B1 (en) 2003-05-15 2007-02-20 Marvell International Ltd. Baseband filter start-up circuit
KR100564630B1 (ko) * 2004-08-06 2006-03-29 삼성전자주식회사 디지털 입력 신호의 변화에 무관하게 고정적인 오프셋을가지는 아날로그 신호를 출력하는 ｄ／ａ 컨버터
CN100428613C (zh) * 2004-09-16 2008-10-22 中芯国际集成电路制造(上海)有限公司 具有稳定快速响应和低待机电流的调压器用器件
EP1693963A3 (fr) * 2005-02-10 2010-01-13 NEC Electronics Corporation Circuit d'interface
JP2007074430A (ja) * 2005-09-07 2007-03-22 Flying Mole Corp 演算増幅器
JP4861791B2 (ja) * 2006-10-27 2012-01-25 ルネサスエレクトロニクス株式会社 演算増幅器及び表示装置
JP4713560B2 (ja) * 2007-10-29 2011-06-29 富士通セミコンダクター株式会社 差動増幅回路
US8102211B2 (en) 2010-06-08 2012-01-24 Qualcomm, Incorporated Rail-to-rail input stage circuit with dynamic bias control
WO2015153176A1 (fr) * 2014-03-31 2015-10-08 Microsemi Corporation Système et procédé de détection de courant
US20170019069A1 (en) * 2015-07-16 2017-01-19 Eridan Communications, Inc. High-Speed, High-Voltage GaN-Based Operational Amplifier

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Also Published As

Publication number Publication date
WO1997033365A1 (fr) 1997-09-12
JPH11504791A (ja) 1999-04-27
KR19990008323A (ko) 1999-01-25
CN1189932A (zh) 1998-08-05
CN1079611C (zh) 2002-02-20
US5936468A (en) 1999-08-10

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